CN104969337A - Production method and production device for semiconductor devices - Google Patents
Production method and production device for semiconductor devices Download PDFInfo
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- CN104969337A CN104969337A CN201480006575.2A CN201480006575A CN104969337A CN 104969337 A CN104969337 A CN 104969337A CN 201480006575 A CN201480006575 A CN 201480006575A CN 104969337 A CN104969337 A CN 104969337A
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- diaphragm seal
- redundance
- semiconductor device
- semiconductor element
- sealing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 107
- 238000007789 sealing Methods 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 103
- 238000002360 preparation method Methods 0.000 claims abstract description 49
- 238000011084 recovery Methods 0.000 claims abstract description 14
- 238000004080 punching Methods 0.000 claims description 46
- 238000009434 installation Methods 0.000 claims description 42
- 238000007493 shaping process Methods 0.000 claims description 41
- 238000009966 trimming Methods 0.000 claims description 23
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 65
- 239000000565 sealant Substances 0.000 description 46
- 238000010438 heat treatment Methods 0.000 description 13
- 239000003463 adsorbent Substances 0.000 description 11
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
This method is a production method for semiconductor devices obtained by sealing a semiconductor element, by using a sealing sheet. The production method for semiconductor devices comprises: a preparation step in which the sealing sheet and the semiconductor element are prepared; a sealing step in which, after the preparation step, the semiconductor element is sealed using the sealing sheet; and a recovery step in which, after the sealing step, the sealing sheet and the semiconductor element are recovered. The sealing step comprises an excess-portion generating step in which an excess portion of the sealing sheet is generated while the sealing sheet is being pressed by two press members arranged facing each other and sandwiching the sealing sheet therebetween. The recovery step comprises a removal step in which the excess portion is removed.
Description
Technical field
The present invention relates to manufacture method and the manufacturing installation of semiconductor device, specifically, relate to the manufacture method of semiconductor device and the manufacturing installation of semiconductor device.
Background technology
All the time, known semiconductor sealing device obtains by utilizing diaphragm seal to carry out sealing semiconductor element.
Such as, propose there is method as described below: after pasting the prepreg containing epoxy resin to the integrated circuit (IC) chip being installed on carrier film, put it in metal pattern, make resin molded semiconductor device (for example, referring to following patent documentation 1 by compression molding.)。
At first technical literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 5-291319 publication
The problem that invention will solve
In recent years, seek the more excellent sealing of prepreg relative to semiconductor element according to purposes and object, according to the method for patent documentation 1, there is the unfavorable condition that cannot meet above-mentioned requirements.
Summary of the invention
The object of the invention is to, a kind of manufacture method and the manufacturing installation that can carry out the semiconductor device of sealing semiconductor element with the sealing of excellence are provided.
For the means of dealing with problems
The manufacture method of semiconductor device of the present invention is the manufacture method of the semiconductor device obtained by utilizing diaphragm seal to carry out sealing semiconductor element, it is characterized in that, comprising: the preparatory process preparing described diaphragm seal and described semiconductor element; After described preparatory process, utilize described diaphragm seal to seal the sealing process of described semiconductor element; And, after described sealing process, reclaim the recovery process of described diaphragm seal and described semiconductor element, described sealing process comprises redundance and produces operation, produce in operation at this redundance, while utilize two punching components clipping described diaphragm seal and mutually opposing configuration to carry out punching press to described diaphragm seal, produce the redundance of described diaphragm seal, described recovery process comprises the removal step removing described redundance.
According to this manufacture method, produce operation according to redundance, utilize two punching components clipping diaphragm seal and mutually opposing configuration to carry out punching press to diaphragm seal, while the redundance of generation diaphragm seal.In other words, utilize two punching components to carry out punching press to diaphragm seal, to the degree of the redundance of generation diaphragm seal.Therefore, it is possible to improve diaphragm seal to the sealing of semiconductor element.Consequently, the semiconductor device of diaphragm seal to the sealing excellence of semiconductor element can be manufactured.
In addition, according to removal step, due to removing redundance, therefore, it is possible to the semiconductor device of shape desired by obtaining.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, produce in operation at described redundance, described redundance is stretched out to the direction orthogonal with pressing direction of two described punching components, comprises trimming at described recovery process, in this trimming, the described redundance stretched out is cut off, and shaping is carried out to the outer shape of described diaphragm seal.
According to this manufacture method, in recovery process, owing to being cut off by redundance, and shaping is carried out to the outer shape of diaphragm seal, therefore, it is possible to removing redundance, and the semiconductor device of shape desired by obtaining.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, in described trimming, utilize and cut off component relative to first of the movement of carrying out unrolling of described diaphragm seal, cut off described redundance, while carry out shaping to the outer shape of described diaphragm seal.
According to this manufacture method, utilize and cut off component relative to diaphragm seal first of movement of carrying out unrolling, while redundance is cut off, while carry out shaping to the outer shape of diaphragm seal, therefore, it is possible to while redundance is cut off, while carry out shaping to the outer shape of diaphragm seal, thus the semiconductor device of shape desired by obtaining.
In the manufacture method of semiconductor device of the present invention, preferably, in described trimming, utilize and have to cut off component at second of the blade arranged to not overlapping with the perspective plane of the described punching component of side mode during described pressing direction projection, while the redundance will stretched out from described perspective plane cuts off, shaping is carried out to the outer shape of described diaphragm seal.
According to this manufacture method, in trimming, utilize and there is second of the blade arranged in not overlapping with the perspective plane of the punching component of the side mode when projecting to pressing direction cut off component, while the redundance will stretched out from perspective plane cuts off, shaping is carried out to the outer shape of diaphragm seal, therefore, it is possible to side by side implement the cut-out of redundance and the shaping of diaphragm seal.Therefore, it is possible to reduce manufacturing man-hours, and obtain semiconductor device easily.
In the manufacture method of semiconductor device of the present invention, preferably, the described punching component of a side being formed the receiving portion of the redundance for accepting described diaphragm seal, producing in operation at described redundance, the redundance of described diaphragm seal is at least stretched out in receiving portion.
According to this manufacture method, produce in operation at redundance, owing to making the redundance of diaphragm seal at least stretch out in receiving portion, thus, by redundance is reliably accepted in receiving portion, the sealing relative to semiconductor element of diaphragm seal can be improved.
In the manufacture method of semiconductor device of the present invention, preferably, in described sealing process, described diaphragm seal is configured in the mode of being surrounded by weir portion and seals described semiconductor element, produce in operation at described redundance, limit described redundance and exceed described weir portion and the situation of stretching out.
According to this manufacture method, produce in operation at redundance, exceed weir portion and the situation of stretching out due to redundance can be limited, therefore, it is possible to promote that redundance is to stretching out in above-mentioned receiving portion further, thus redundance can be formed more reliably.
The manufacturing installation of semiconductor device of the present invention is the manufacturing installation utilizing diaphragm seal to carry out the semiconductor device of sealing semiconductor element, it is characterized in that, possesses: the preparation device preparing described diaphragm seal and described semiconductor element; Utilize ready described diaphragm seal to seal the sealing device of described semiconductor element; And, reclaim the retracting device of the described semiconductor element after by described diaphragm seal sealing, described sealing device is while utilize two of mutually opposing configuration punching components to carry out punching press to described diaphragm seal, while produce the redundance of described diaphragm seal, described retracting device possesses the removing device removing described redundance.
According to this manufacturing installation, can sealing device be passed through, utilize two punching components clipping diaphragm seal and mutually opposing configuration to carry out punching press to diaphragm seal, on one side the redundance of generation diaphragm seal.In other words, two punching components can be utilized to carry out punching press to diaphragm seal, to the degree of the redundance of generation diaphragm seal.Therefore, it is possible to improve diaphragm seal to the sealing of semiconductor element.Consequently, the semiconductor device of diaphragm seal to the sealing excellence of semiconductor element can be manufactured.
In addition, owing to utilizing removing device to remove redundance, therefore, it is possible to the semiconductor device of shape desired by obtaining.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, two described punching components are configured to, described redundance is stretched out to the direction orthogonal with pressing direction, described removing device possesses apparatus for shaping, and the described redundance stretched out cuts off by this apparatus for shaping, and carries out shaping to the outer shape of described diaphragm seal.
According to this manufacturing installation, owing to removing device can being utilized redundance cut-out and carrying out shaping to the outer shape of diaphragm seal, therefore, it is possible to removed by redundance, and the semiconductor device of desired shape can be obtained.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described apparatus for shaping possesses and cuts off component relative to described diaphragm seal along first of the movement of carrying out unrolling of described orthogonal direction, described first cuts off component is configured to, while cut off by described redundance, shaping is carried out to the outer shape of described diaphragm seal.
According to this manufacturing installation, can utilize and cut off component relative to diaphragm seal first of movement of carrying out unrolling, while redundance is cut off, while carry out shaping to the outer shape of diaphragm seal, therefore, it is possible to while redundance is cut off, while carry out shaping to diaphragm seal, thus the semiconductor device of shape desired by obtaining.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, described apparatus for shaping possesses the second cut-out component, this the second cut-out component has the blade arranged in not overlapping with the perspective plane of the described punching component of the side mode when projecting to described pressing direction, and described second cuts off component is configured to, when to described pressing direction projection, while the redundance will stretched out from described perspective plane cuts off, shaping is carried out to the outer shape of described diaphragm seal.
According to this manufacture method, utilize and there is second of the blade arranged in not overlapping with the perspective plane of the punching component of the side mode when projecting to pressing direction cut off component, while the redundance will stretched out from perspective plane cuts off, shaping is carried out to the outer shape of diaphragm seal, therefore, it is possible to side by side implement the cut-out of redundance and the shaping of diaphragm seal.Therefore, it is possible to reduce manufacturing man-hours, and easily obtain semiconductor device.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, the described punching component of a side forms the receiving portion of the redundance for accepting described diaphragm seal, described receiving portion is configured to accept described redundance.
According to this manufacturing installation, due to the redundance of diaphragm seal can be made at least to stretch out in receiving portion, thus, by redundance is reliably accepted in receiving portion, the sealing relative to semiconductor element of diaphragm seal can be improved.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described sealing device possesses the weir portion surrounding described diaphragm seal between two described punching components, and described weir portion is configured to limit described redundance and exceedes described weir portion and the situation of stretching out.
Place according to this manufacture, exceed weir portion and the situation of stretching out due to redundance can be limited, therefore, it is possible to promote that redundance is to stretching out in above-mentioned receiving portion further, thus redundance can be formed more reliably.
Invention effect
According to manufacture method and the manufacturing installation of semiconductor device of the present invention, the semiconductor device of diaphragm seal to the sealing excellence of semiconductor element can be manufactured.
Accompanying drawing explanation
Fig. 1 illustrates the first execution mode of the manufacturing installation of semiconductor device of the present invention and the schematic top of the 3rd execution mode.
Fig. 2 is the cutaway view of each manufacturing process of the first execution mode of the manufacture method that semiconductor device of the present invention is shown, a () expression utilizes carrying device to send the operation of diaphragm seal, b () represents the first removing/trimming, c () represents the first stripping process, (d) represents the operation of upper surface diaphragm seal being placed in multiple semiconductor element.
Fig. 3 is that then Fig. 2 illustrates the cutaway view of each manufacturing process of the first execution mode of the manufacture method of semiconductor device of the present invention, e () represents sealing process, f () represents the second stripping process, g () represents the second removing/trimming, (h) represents the operation reclaiming semiconductor device.
Fig. 4 illustrates the operation sent from carrying device by the rectangular diaphragm seal of the first execution mode and utilizes the first removing device diaphragm seal to be cut into the stereogram of the operation of toroidal.
Fig. 5 is the schematic top of the second execution mode of the manufacturing installation that semiconductor device of the present invention is shown.
Fig. 6 is the cutaway view of each manufacturing process of the second execution mode of the manufacturing installation that semiconductor device of the present invention is shown, e () represents sealing process, f () represents the second removing/trimming, g () represents the second stripping process, (h) represents the operation reclaiming semiconductor device.
Fig. 7 is in the preparation device to the 3rd execution mode of the manufacturing installation at semiconductor device of the present invention, the operation sent from carrying device by rectangular diaphragm seal and utilize the first removing device that diaphragm seal is cut to toroidal and the stereogram that is described of the operation forming stripping aperture.
Fig. 8 is the cutaway view of each manufacturing process of the 3rd execution mode of the manufacture method that semiconductor device of the present invention is shown, a () expression utilizes carrying device to send the operation of diaphragm seal, b () represents the first removing/trimming, c () represents the first stripping process, diaphragm seal is placed in the operation on the upper surface of multiple semiconductor element by (d) expression.
Fig. 9 is then Fig. 8 and the cutaway view of each manufacturing process of the 3rd execution mode of the manufacture method of semiconductor device of the present invention is shown, e () represents the operation of substrate-placing on the first pressed sheet, f () represents sealing process, g () represents the second stripping process, (h) represents the second removing/trimming.
Embodiment
< first execution mode >
In FIG, paper left and right directions is set to fore-and-aft direction (first direction), paper above-below direction is set to left and right directions (second direction), paper depth direction is set to above-below direction (third direction).The direction of Fig. 2 ~ Fig. 4 is according to direction indicated by the arrow in FIG.In addition, front side is the downstream, carrying direction of diaphragm seal described later, and rear side is the carrying direction upstream side of diaphragm seal.
As shown in Figure 1, the manufacturing installation 10 of semiconductor device is (below, sometimes simply referred to as manufacturing installation 10.) be manufacturing installation for the manufacture of utilizing diaphragm seal 4 to carry out the semiconductor device 1 (with reference to Fig. 3 (h)) of sealing semiconductor element 2.
The retracting device 13 that the manufacturing installation 10 of this semiconductor device integrally possesses preparation device 11, is configured in the sealing device 12 of the front side of preparation device 11, is configured in the front side of sealing device 12.In manufacturing installation 10, preparation device 11, sealing device 12 and retracting device 13 configure along fore-and-aft direction proper alignment, according to the above-mentioned configuration of preparation device 11, sealing device 12 and retracting device 13, manufacturing installation 10 extends along fore-and-aft direction under top view.In this manufacturing installation 10, diaphragm seal 4, in preparation device 11, sealing device 12 and retracting device 13, is carried from rear, toward the front while multiple semiconductor element 2 is sealed and reclaimed.
Preparation device 11 is configured in the rear portion of manufacturing installation 10.Preparation device 11 possesses: carrying device 8; Be configured in the first removing device 17 as removing device of the front side of carrying device 8; Be configured in first stripping off device 49 as stripping off device of the front side of the first removing device 17; Be configured in the mounting apparatus 51 of the front side of the first stripping off device 49; And be configured in the substrate preparation device 24 in left side (with a side side in orthogonal direction, carrying direction) of mounting apparatus 51.Remove the above-mentioned configuration of device 17, first stripping off device 49, mounting apparatus 51 and substrate preparation device 24 according to carrying device 8, first, preparation device 11 is set under top view in L-shaped shape.
As shown in Fig. 2 (a) and Fig. 4, carrying device 8 possesses the outlet roller 29 configured along the mode of left and right directions with axle.In carrying device 8, outlet roller 29 is wound with rectangular diaphragm seal 4 described later, thus, carrying device 8 is configured to diaphragm seal 4 to send toward the front with rectangular state.It should be noted that, outlet roller 29 is configured to, and supporting course 43 is towards downside, and diaphragm seal 4 towards upside, and is sent by the first peel ply 33.
First removing device 17 removes the balance 36 (aftermentioned) of diaphragm seal 4, specifically, as shown in Fig. 2 (b), possess as the stocking cutter 44 of apparatus for shaping, balance stripping off device (not shown) and the first Handling device 14.
As stocking cutter 44, such as, enumerate Thomson cutter etc.Stocking cutter 44 is configured to, by diaphragm seal 4, sealant 31 and peel ply 32 cut off in a thickness direction, and do not cut off supporting course 43 in a thickness direction.
Balance stripping off device (not shown) will be cut off by stocking cutter 44 and not for the mechanism of peeling off from supporting course 43 as the balance 36 of redundance of the sealing of multiple semiconductor element 2, such as, enumerates known mechanism for stripping.
In addition, because the balance 36 of the hermetic unit 55 of the sealing for multiple semiconductor element 2 from diaphragm seal 4 can be separated by stocking cutter 44 and balance stripping off device, therefore form the removing device of the balance 36 of removing diaphragm seal 4.
First Handling device 14 possesses: guide rail 38; Be supported on the arm 37 of guide rail 38; Be arranged on the adsorbent equipment 39 of the bottom of arm 37; Be built in the carrying heater 16 as diaphragm seal temperature control equipment of adsorbent equipment 39.
As shown in Figure 1, guide rail 38 is arranged in the mode extended along fore-and-aft direction on the top of manufacturing installation 10, such as, arrange continuously with preparation device 11, sealing device 12, retracting device 13, in more detail, remove with first of preparation device 11 device 17, first stripping off device 49 and mounting apparatus 51, sealing device 12, retracting device 13 the second stripping off device 50 arrange continuously.As shown in Fig. 2 (b), arm 37 supports as moving along fore-and-aft direction by guide rail 38.In more detail, with reference to Fig. 1, arm 37 supports as moving to preparation device 11, sealing device 12, retracting device 13 by guide rail 38.
As shown in FIG. 2 and 3, arm 37 is formed as extending along above-below direction, and its upper end is supported on guide rail 38.In addition, arm 37 is configured to stretch along above-below direction, and specifically, namely bottom downward movement extends, and namely movement is shortened upward.In addition, arm 37 can make its bottom slightly move along left and right directions.
Adsorbent equipment 39 can adsorb diaphragm seal 4 by attracting action, and liberates diaphragm seal 4 by the stopping of attraction action.Specifically, adsorbent equipment 39 is formed as the roughly writing board shape extended along fore-and-aft direction and left and right directions, under top view, is formed as the size identical with the diaphragm seal 4 of monolithic or the size slightly larger than the diaphragm seal 4 of monolithic.
Carrying heater 16 is built in adsorbent equipment 39, in addition, carry the heating-up temperature of heater 16 be set as with changing according to each operation of correspondence each manufacturing installation, specifically the first removing device 17, first stripping off device 49, mounting apparatus 51, sealing device 12 and the second stripping off device 50 respective desired by temperature.
It should be noted that, the first removing device 17 is provided with and fetches roller for fetching the not shown of supporting course 43.
As shown in Figure 1, the first stripping off device 49 is provided with and removes device 17 continuous print first Handling device 14 with first, in addition, as shown in Fig. 2 (c), the first stripping off device 49 possesses the mechanism for stripping of the below being arranged on the first Handling device 14.Second peel ply 34 can be peeled off from sealant 31 by mechanism for stripping, such as, enumerate the mechanism for stripping of the roller 53 possessing adhesive tape 52 and reel this adhesive tape 52, specifically, enumerate the known mechanism for stripping that Japanese Unexamined Patent Publication 2007-43048 publication etc. is described.
As shown in Figure 1, mounting apparatus 51 is provided with and the first stripping off device 49 continuous print first Handling device 14, in addition, as shown in Fig. 2 (d), mounting apparatus 51 possesses the loading plate 56 of the built-in mounting heater 61 as preparation heater and not shown positioner.
Loading plate 56 is formed as the substantially planar extended along direction, face.Thus, mounting apparatus 51 can receive the substrate 3 come from substrate preparation device 24 (with reference to Fig. 1) supply.In addition, due to mounting heater 61 built-in in loading plate 56, therefore loading plate 56 can prepare the diaphragm seal 4 heating and be placed on substrate 3.
Not shown positioner such as possesses: for detect diaphragm seal 4, relative to the camera of the position of the multiple semiconductor elements 2 installed on the substrate 3; Based on by camera calibration to the position of diaphragm seal 4 adjust the control device (CPU etc.) of arm 37 (bottom) position on fore-and-aft direction and left and right directions.
In addition, on mounting apparatus 51 and the following sealing device 12 illustrated, the second not shown Handling device for being carried from mounting apparatus 51 to sealing device 12 by the substrate be placed on loading plate 56 3 is provided with.It should be noted that, mounting apparatus 51 is configured for the device of the part (preparation heating process) implementing sealing process described later.
Substrate preparation device 24 can the substrate 3 being provided with the monolithic of multiple semiconductor element 2 shown in set-up dirgram 2 (d), and is supplied (sending) to mounting apparatus 51 by described substrate 3.
In addition, preparation device 11 possesses atmosphere temperature/humidity conditioner (not shown).Atmosphere temperature/humidity conditioner is the temperature of atmosphere and/or the device of humidity that control the diaphragm seal 4 prepared in preparation device 11, such as, enumerates known atmosphere temperature/humidity conditioner.It should be noted that, around preparation device 11, be provided with not shown housing, utilize housing to cover preparation device 11, thus, preparation device 11 and extraneous air are separated.Housing is utilized to flow into preparation device 11 to prevent extraneous air, thus the temperature controlled more reliably in housing and/or humidity.
As shown in Figure 1, sealing device 12 is provided with and preparation device 11 continuous print first Handling device 14, in addition, as shown in Fig. 3 (e), sealing device 12 possesses the hot stamping device 26 as formal heater.Hot stamping device 26 possesses two the first pressed sheet 27 and the second pressed sheets 28 as punching component spaced apart and arranged opposite in the vertical direction each other.
First pressed sheet 27 in the writing board shape extended along fore-and-aft direction and left and right directions, and is configured in the bottom of hot stamping device 26.Second pressed sheet 28 and the first pressed sheet 27 upside at the first pressed sheet 27 arranged opposite at spaced intervals.In addition, the second pressed sheet 28 is configured in fact parallel with the first pressed sheet 27.
Second pressed sheet 28 is in the shape identical with the first pressed sheet 27, and relatively can move up and down relative to the first pressed sheet 27, specifically, the second pressed sheet 28 can press and be clipped in diaphragm seal 4 between the first pressed sheet 27 and the second pressed sheet 28.
In addition, the first pressed sheet 27 and the second pressed sheet 28 separately among be built-in with not shown heater.
Sealing device 12 possesses above-mentioned hot stamping device 26, therefore utilizes ready diaphragm seal 4 to be sealed in the lump by multiple semiconductor element 2.
As shown in Figure 1, retracting device 13 possesses: the second stripping off device 50 as stripping off device be connected with the front side of sealing device 12; Be configured in the second removing device 18 as removing device of the front side of the second stripping off device 50; Be configured in the semiconductor device retracting device 40 of the front side of the second removing device 18.Remove the above-mentioned configuration of device 18 and semiconductor device retracting device 40 according to the second stripping off device 50, second, retracting device 13 is set under top view from the roughly rectilinear form that sealing device 12 forwards extends.
As shown in Fig. 3 (f), the second stripping off device 50 possesses mechanism for stripping and support plate 54.
First peel ply 33 can be peeled off from sealant 31 by mechanism for stripping, such as, enumerates the mechanism for stripping (specifically, possess the mechanism for stripping of adhesive tape 52 and roller 53) identical with the mechanism for stripping of the first above-mentioned stripping off device 49.
Support plate 54 is configured in the bottom of the second stripping off device 50, specifically, is configured in the downside of mechanism for stripping, in addition, is built-in with the supports heaters 62 as diaphragm seal temperature control equipment in this support plate 54.Second stripping off device 50 can utilize supports heaters 62 to heat the semiconductor device 1 of the upper surface being placed in support plate 54.
In addition, as shown in the imaginary line of Fig. 3 (f), the second stripping off device 50 is provided with and preparation device 11 and sealing device 12 continuous print first Handling device 14.
As shown in Fig. 3 (g), the second removing device 18 possesses the housing 22 for accommodating semiconductor device 1 and cuts off the cutting member 45 of component as first.
What open above housing 22 is formed as has under casing shape, and four sidewalls integrally possessing diapire and extend upward from the peripheral end portion of diapire.In addition, each sidewall of housing 22 is formed the suction port 23 of its thickness direction through, and at suction port 23, place is connected with not shown suction device.
In addition, being provided with on the top of housing 22 can to the blow-off outlet of semiconductor device 1 blow gas (not shown).
Cutting member 45 possesses: extend and the main shaft that can move freely along fore-and-aft direction and left and right directions along above-below direction; And be arranged on main shaft bottom and be formed as can relative to main shaft rotate rotary cutter.Specifically, as cutting member 45, enumerate and possess the milling machine (preferably, end mill etc.) etc. of slotting cutter as rotary cutter.Cutting member 45 while make main shaft unroll movement relative to semiconductor device 1, the redundance 35 (aftermentioned) of removing (cut-out) diaphragm seal 4.
On semiconductor device retracting device 40, can be provided with not shown box with loading and unloading relative to semiconductor device retracting device 40, thus, the semiconductor device 1 obtained is contained in box by semiconductor device retracting device 40, reclaims semiconductor device 1 according to box.
Thus, semiconductor device retracting device 40 reclaims the multiple semiconductor elements 2 after being sealed by diaphragm seal 4.
It should be noted that, retracting device 13 is provided with the 3rd not shown Handling device.Specifically, configure in the scope that second stripping off device 50, second of the 3rd Handling device in retracting device 13 removes device 18 and semiconductor device retracting device 40.As the 3rd Handling device, such as, enumerate known Handling device, such as, to enumerate the semiconductor device 1 of having been peeled off the first peel ply 33 by the second stripping off device 50 from the lower side bearing (mentioning) of semiconductor device 1 while to the Handling device etc. of front side carrying.
Next, the manufacture method using this manufacturing installation 10 to manufacture semiconductor device 1 is described.
The method is the method obtaining semiconductor device 1 by utilizing diaphragm seal 4 to carry out sealing semiconductor element 2, specifically, comprises the preparatory process preparing diaphragm seal 4 and multiple semiconductor element 2; After preparatory process, utilize the sealing process that multiple semiconductor element 2 seals by diaphragm seal 4 in the lump; And after sealing process, reclaim the recovery process of diaphragm seal 4 and multiple semiconductor element 2.
In the method, first, utilize the preparation device 11 of manufacturing installation 10 to implement preparatory process.
Specifically, as shown in Fig. 2 (a) and Fig. 4, first, rectangular diaphragm seal 4 is wound in the outlet roller 29 of carrying device 8.
As shown in Figure 4, diaphragm seal 4 is prepared to rectangular sheet, and then, diaphragm seal 4 is shaped as the sheet of overlooking monolithic in circular shape corresponding with substrate 3, for the sealing of semiconductor element 2 (aftermentioned).
As shown in Fig. 2 (a), diaphragm seal 4 is prepared to the laminates possessing sealant 31, be laminated in the peel ply 32 as protection component of the upper surface of sealant 31 and lower surface.
Sealant 31 is formed as plate shape by encapsulant.As encapsulant, such as, the heat-curing resin of Thermocurable silicone resin, epoxy resin, Thermocurable polyimide resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, Thermocurable polyurethane resin etc. can be enumerated.In addition, as encapsulant, the hot curing resin composition in the proper ratio containing above-mentioned heat-curing resin and additive can be enumerated.
As additive, such as, enumerate filler, fluorophor etc.As filler, enumerate the inorganic fine particles such as such as silicon dioxide, titanium dioxide, talcum, aluminium oxide, aluminium nitride, silicon nitride, the organic particles etc. such as such as silicone particle.Fluorophor has wavelength convert function, enumerates the yellow fluorophor that such as blue light can be converted to sodium yellow, the red-emitting phosphors etc. that blue light can be converted to red light.As yellow fluorophor, enumerate such as Y
3al
5o
12: the carbuncle type fluorophor such as Ce (YAG (yttrium-aluminium-garnet): Ce).As red-emitting phosphors, enumerate such as CaAlSiN
3: Eu, CaSiN
2: the nitride phosphors etc. such as Eu.
Sealant 31 was modulated into half solid shape before sealing semiconductor element 2, specifically, when encapsulant contains heat-curing resin, such as, before solidifying (C rank) completely, in other words, modulated under semi-solid preparation (B rank) state.
The size of sealant 31 is set appropriately according to the size of semiconductor element 2 and substrate 3, specifically, the length of the left and right directions of the sealant 31 when diaphragm seal 4 is prepared to rectangular sheet and width are such as more than 100mm, be preferably more than 200mm, and be such as below 1500mm, be preferably below 700mm.In addition, the thickness of sealant 31 is corresponding with the size of semiconductor element 2 and be set appropriately, such as, be more than 30 μm, is preferably more than 100 μm, and is such as less than 3000 μm, is preferably less than 1000 μm.
As shown in Fig. 2 (a), peel ply 32 is before sealing semiconductor element 2, protect the upper surface of sealant 31 and the screening glass of lower surface (two sides).Peel ply 32 possesses the first peel ply 33 of whole of the upper surface being laminated in sealant 31 and is laminated in second peel ply 34 of whole of lower surface of sealant 31.
First peel ply 33 is the screening glass of the upper surface (one side) protecting sealant 31 before sealing semiconductor element 2 and when sealing; specifically; such as; enumerate the polymer sheets such as polythene strip, polyester sheet (PET etc.), polystyrene sheet, POLYCARBONATE SHEET, polyimide piece; such as potsherd, such as metal forming etc.In the first peel ply 33, also can implement the lift-off processing such as fluorine process to the contact-making surface contacted with sealant 31.The size of the first peel ply 33 is set appropriately according to the stripping conditions of the second stripping off device 50 (with reference to Fig. 3 (f)) described later, thickness is such as more than 15 μm, be preferably more than 25 μm, and be such as less than 125 μm, be preferably less than 75 μm.
Second peel ply 34 is before sealing semiconductor element 2, when sealing and protects the screening glass of sealant 31 lower surface (one side) after sealing; its material and size are set appropriately according to the stripping conditions of the first stripping off device 49 (with reference to Fig. 2 (c)) described later; specifically, with the material of the first peel ply 33 and measure-alike.
In addition, diaphragm seal 4 is provided with the supporting course 43 of bearing seal sheet 4.
Supporting course 43 formed the back side of diaphragm seal 4 before sealing semiconductor element 2, specifically, was laminated in whole of the lower surface of the second peel ply 34.As the supporting material forming supporting course 43, as long as the material of supporting the second peel ply 34, do not limit especially, such as enumerate the polymer sheets such as polythene strip, polyester sheet (PET etc.), polystyrene sheet, POLYCARBONATE SHEET, polyimide piece, such as potsherd, such as metal forming etc.The thickness of supporting course 43 is such as more than 15 μm, is preferably more than 25 μm, and is such as less than 125 μm, is preferably less than 75 μm.
In addition, make the atmosphere temperature of preparation device 11/humidity conditioner action and control temperature and/or the humidity of the atmosphere (in other words, the atmosphere of diaphragm seal 4) of the preparation device 11 in housing in advance.Specifically, temperature being controlled as such as 15 ~ 40 DEG C, is 25 ~ 60%RH (atmosphere temperature/humid control operation) by humid control.
In addition, the carrying heater 16 of the adsorbent equipment 39 shown in Fig. 2, the heater loading the first pressed sheet 27 shown in heater 61, Fig. 3 and the second pressed sheet 28 and supports heaters 62 are redefined for set point of temperature.Specifically, carrying heater 16 is heated to remove temperature corresponding to device 17 with first, such as 40 ~ 100 DEG C, mounting heater 61 is heated to such as 50 ~ 90 DEG C, such as when encapsulant is heat-curing resin, as required, the heater of the first pressed sheet 27 and the second pressed sheet 28 is heated to make encapsulant solidify the temperature on (C rank) or the temperature higher than this temperature completely, and set higher than the temperature of mounting heater 61, specifically, set than the temperature height such as more than 10 DEG C loading heater 61, be preferably more than 20 DEG C, and set than the temperature height such as less than 120 DEG C loading heater 61, be preferably less than 80 DEG C.The heater of the first pressed sheet 27 and the second pressed sheet 28 is heated to such as 60 ~ 210 DEG C.In addition, supports heaters 62 is heated to the temperature of the warpage that can prevent sealant 31, such as be heated to the temperature different from the temperature of the first pressed sheet 27 and the second pressed sheet 28, set lower such as more than 10 DEG C than the temperature of the first pressed sheet 27 and the second pressed sheet 28, be preferably more than 20 DEG C, or set lower such as less than 20 DEG C than the temperature of the first pressed sheet 27 and the second pressed sheet 28, be preferably less than 10 DEG C, specifically, 50 ~ 200 DEG C are heated to.
It should be noted that, carrying heater 16 is controlled as the temperature corresponding with each device (operation) of manufacturing installation 10 in the first removing device 17 and the first stripping off device 49 (and mounting apparatus 51) of preparation device 11.
Then, as shown in the arrow of Fig. 2 (a) and Fig. 4, the outlet roller 29 of diaphragm seal 4 from carrying device 8 is sent toward the front.
Then, as shown in Fig. 2 (b) and Fig. 4, in the first removing device 17, stocking cutter 44 is first utilized diaphragm seal 4 to be divided into the balance 36 of hermetic unit 55 for the sealing of multiple semiconductor element 2 and encirclement hermetic unit 55.Hermetic unit 55 is such as formed as overlooking in circular shape, in rectangular diaphragm seal 4, and proper alignment configuration spaced apart from each other in the longitudinal direction.It should be noted that, hermetic unit 55 is set as the shape identical with the outer shape of substrate 3 and identical size.The linking portion that above-mentioned Width both ends link up is integrally formed by between the Width both ends of the left and right directions both sides of each hermetic unit 55 and hermetic unit 55 adjacent in the longitudinal direction by balance 36.In addition, stocking cutter 44 cuts off sealant 31 and peel ply 32 in a thickness direction, and does not cut off supporting course 43 in a thickness direction.
Then, as shown in the single dotted broken line arrow of Fig. 2 (b), in preparation device 11, not shown balance stripping off device is utilized to be peeled off from supporting course 43 by balance 36.Thus, the balance 36 (the first removing/trimming as removal step and trimming in preparatory process) of diaphragm seal 4 is removed.
Then, with reference to Fig. 2 (b), the bottom of arm 37 is extended, in other words, the bottom of arm 37 is declined, the lower surface of adsorbent equipment 39 is contacted with the upper surface of diaphragm seal 4 (the first peel ply 33 of hermetic unit 55).Then, the diaphragm seal 4 of monolithic is adsorbed by the attraction action of adsorbent equipment 39.In other words, diaphragm seal 4 is made to be adsorbed in the bottom of arm 37.
Then, as shown in the arrow of Fig. 2 (b) and imaginary line, the bottom of arm 37 is shortened, in other words, make the bottom of arm 37 rises, diaphragm seal 4 is peeled off from supporting course 43, specifically, sealant 31 and peel ply 32 are peeled off from supporting course 43.Thus, the hermetic unit 55 of diaphragm seal 4 is made to be separated from supporting course 43.In other words, by the hermetic unit 55 of the diaphragm seal 4 of monolithic from supporting course 43 pull-up.
It should be noted that, the supporting course 43 after peel seal part 55 is fetched by not shown roller of fetching in the first removing device 17.
Then, with reference to Fig. 1, arm 37 is moved toward the front along guide rail 38, the diaphragm seal 4 of monolithic is carried to the first stripping off device 49.
As shown in Fig. 2 (c), in the first stripping off device 49, mechanism for stripping is utilized to be peeled off (the first stripping process as stripping process preparatory process) from sealant 31 by the second peel ply 34.
In the first stripping process, the temperature of carrying heater 16 can be controlled as the temperature corresponding with the stripping of mechanism for stripping to the second peel ply 34.
Then, arm 37 is moved toward the front along guide rail 38, the diaphragm seal 4 of monolithic is carried to mounting apparatus 51.
In addition, the substrate preparation device 24 shown in Fig. 1 is utilized to prepare to be provided with the substrate 3 of the monolithic of multiple semiconductor element 2.
As long as the mounting substrate of semiconductor element 2 installed by substrate 3, do not limit especially, such as, comprise silicon substrate, ceramic substrate, polyimide resin substrate, be laminated with the insulated substrate such as multilayer board of insulating barrier on metallic substrates.The outer shape of substrate 3, in other words, plan view shape is formed as the shape practically identical with the outer shape of obtained semiconductor device 1, such as, is formed as the flat board of the monolithic overlooked in circular shape.The size of substrate 3 is set appropriately according to the purposes of semiconductor device 1 and object, such as, be more than 50mm, is preferably more than 100mm, and is such as below 1500mm, is preferably below 700mm.
Semiconductor element 2 is provided with multiple relative to a substrate 3.Multiple semiconductor element 2 is proper alignment configuration spaced apart from each other on fore-and-aft direction and left and right directions.In addition, each semiconductor element 2 such as connected by wire bond or flip-chip install and be equipped on the surface of substrate 3.Each semiconductor element 2 be formed as the maximum length in thickness (above-below direction length) specific surface direction (direction along fore-and-aft direction and left and right directions) short analyse and observe substantially rectangular shape.
As semiconductor element 2, such as, enumerate optical semiconductor, electronic component etc.
As optical semiconductor, such as enumerate LED (light-emitting diode), LD (laser diode) etc., these are the semiconductor elements converting electrical energy into luminous energy.
Electronic component is the semiconductor element of the energy converted electrical energy into beyond light, specifically, is the semiconductor element converting electrical energy into signal energy etc., specifically, enumerates transistor, diode etc.
Size and the configuration of semiconductor element 2 are set appropriately according to the purposes of semiconductor device 1 and object, the thickness of each semiconductor element 2 is such as more than 50 μm, be preferably more than 100 μm, and be such as less than 1000 μm, be preferably less than 700 μm.The maximum length in the direction, face of each semiconductor element 2 is such as more than 1mm, is preferably more than 3mm, and is such as below 50mm, is preferably below 30mm.Interval between adjacent semiconductor element 2 (interval on fore-and-aft direction or left and right directions) be such as more than 0.01mm, is preferably more than 0.05mm, and is such as below 30mm, preferably below 10mm.
Then, the known feedwaies (Handling device) such as such as conveyer belt are utilized to be supplied (carrying) from substrate preparation device 24 to mounting apparatus 51 by the substrate 3 being provided with multiple semiconductor element 2.
Then, as shown in Fig. 2 (d), in mounting apparatus 51, on the substrate 3 being provided with multiple semiconductor element 2, load diaphragm seal 4.
Specifically, as shown in the arrow of Fig. 2 (d), the bottom of arm 37 is declined, the lower surface of the sealant 31 of diaphragm seal 4 is contacted with the upper surface of multiple semiconductor element 2.Then, by the stopping of the attraction action of adsorbent equipment 39, diaphragm seal 4 is made to depart from (separation) from the bottom of arm 37.
Thus, diaphragm seal 4 is placed on the upper surface of multiple semiconductor element 2.
Now, utilize the camera of not shown positioner to detect the position relative to multiple semiconductor element 2 of diaphragm seal 4, adjust the position (positioning process) on the fore-and-aft direction of the bottom of arm 37 and left and right directions based on the position of the diaphragm seal 4 gone out by camera calibration.Specifically, under top view, in the mode making the peripheral end portion of diaphragm seal 4 become the position identical with the peripheral end portion of substrate 3, diaphragm seal 4 is positioned relative to substrate 3.
Thus, prepared substrate 3, multiple semiconductor element 2 and diaphragm seal 4 (preparatory process).
While above-mentioned mounting, start the operation of a part for sealing process.
Specifically, in mounting apparatus 51, implement the preparation heating process of sealing process.
In mounting apparatus 51, the temperature of carrying heater 16 can be controlled as the temperature different from the temperature set in the first stripping off device 49.
In addition, in mounting apparatus 51, because mounting heater 61 is heated to said temperature, diaphragm seal 4 is pre-heated, and in other words, is heated before the formal heating of diaphragm seal 4 in ensuing hot stamping device 26.That is, in preparation heating process, diaphragm seal 4 is prepared heating.According to preparation heating process, the sealant 31 of diaphragm seal 4 becomes soft.
Then, with reference to Fig. 1, the second not shown Handling device is utilized to be carried from mounting apparatus 51 to sealing device 12 by the substrate 3 being placed with diaphragm seal 4.Specifically, as shown in Fig. 3 (e), substrate 3 is placed on the upper surface of the first pressed sheet 27.
Then, in sealing device 12, hot stamping device 26 pairs of substrates 3, semiconductor element 2 and diaphragm seal 4 (comprising the first peel ply 33) is utilized to carry out drop stamping (formal heating process).
Specifically, drop stamping is carried out to the diaphragm seal 4 be clipped between the first pressed sheet 27 and the second pressed sheet 28.In more detail, second pressed sheet 28 is pressed into (carrying out thermo-compressed) relative to the first pressed sheet 27 in the following manner: make the sealant 31 of the softness of diaphragm seal 4 reliably can cover the whole surface (upper surface and side) of semiconductor element 2, further, to the gap-fill sealant 31 between the semiconductor element 2 adjoined each other.In thermo-compressed, to avoid the mode producing space in above-mentioned gap, sealant 31 is filled in above-mentioned gap.
According to above-mentioned drop stamping, the peripheral end portion (fore-and-aft direction both ends and left and right directions both ends) of sealant 31 is from the peripheral end portion (fore-and-aft direction both ends and left and right directions both ends) of the first peel ply 33 and diaphragm seal 4 laterally (outside fore-and-aft direction two and outside left and right directions two, in other words, orthogonal with the pressing direction of hot stamping device 26 direction) stretch out.That is, while carry out drop stamping, while produce the redundance 35 (redundance generation operation) of diaphragm seal 4 to diaphragm seal 4.
The stamping pressure of drop stamping is such as more than 0.01MPa, is preferably more than 0.1MPa, is more preferably more than 1MPa, and is such as below 10MPa.
In addition, to make the second pressed sheet 28 control hot stamping device 26 relative to the mode that the depth of parallelism of the first pressed sheet 27 is less than 100 μm.
In addition, hot stamping device 26 is controlled in the mode be distributed as within 10% of the stamping pressure making the first pressed sheet 27 and the second pressed sheet 28.
In addition, according to above-mentioned drop stamping, when encapsulant is heat-curing resin, the sealant 31 of diaphragm seal 4 can be made to solidify on (C rank) completely.Or, in the manufacturing installation 10 of semiconductor device, also the sealant 31 of diaphragm seal 4 can not be made to solidify on (C rank) completely, and the semiconductor device 1 next illustrated is taken out from the manufacturing installation 10 of semiconductor device, then, utilize such as baking oven etc., the sealant 31 of diaphragm seal 4 is solidified on (C rank) completely.
Therefore, utilize diaphragm seal 4 to seal multiple semiconductor element 2.Thus, semiconductor device 1 is obtained.
Then, utilize retracting device 13 to implement recovery process.
That is, with reference to Fig. 1, first, the first Handling device 14 of sealing device 12 is utilized to be carried to the second stripping off device 50 by semiconductor device 1.Specifically, with reference to Fig. 3 (e), the bottom of arm 37 is extended, in other words, the bottom of arm 37 is declined, the lower surface of adsorbent equipment 39 is contacted with the upper surface of the first peel ply 33 of semiconductor device 1.Then, semiconductor device 1 is adsorbed by the attraction action of adsorbent equipment 39.In other words, semiconductor device 1 is made to be adsorbed in the bottom of arm 37.
Then, the bottom of arm 37 is shortened, in other words, make the bottom of arm 37 rises, by semiconductor device 1 from the first pressed sheet 27 pull-up.
Then, the arm 37 of the first Handling device 14 is forwards moved along guide rail 38, semiconductor device 1 is carried to the second stripping off device 50.
In the handling process of the first Handling device 14 pairs of semiconductor devices 1, the temperature that carrying heater 16 can be heated to suppress the warpage etc. of the sealant 31 sealing multiple semiconductor element 2 be out of shape, specifically, can control as the temperature (diaphragm seal temperature in recovery process control operation) different from the first pressed sheet 27 and the second pressed sheet 28.
In the second stripping off device 50, mechanism for stripping is utilized to be peeled off (the second stripping process as stripping process recovery process) from sealant 31 by the first peel ply 33.
In the second stripping process, the temperature being heated to suppress the warpage etc. of sealant 31 to be out of shape carrying heater 16, specifically, can control as the temperature different from the first pressed sheet 27 and the second pressed sheet 28.
Then, the 3rd not shown Handling device is utilized to be carried from the second stripping off device 50 to the second removing device 18 by the semiconductor device 1 having peeled off the first peel ply 33.Specifically, semiconductor device 1 is contained in housing 22.Specifically, utilize the 3rd not shown Handling device by the substrate of semiconductor device 13 from its on the downside of pull-up while to front side carrying, as shown in Fig. 3 (g), the substrate 3 of semiconductor device 1 is placed on the upper surface of the diapire of housing 22.
Then, in the second removing device 18, utilize cutting member 45 to cut off redundance 35, and shaping (the second removing/trimming as removal step and trimming in recovery process) is carried out to the outer shape of diaphragm seal 4.
In the second removing/trimming, the cutting member 45 carrying out unrolling movement relative to semiconductor device 1 is utilized to cut off redundance 35, while carry out shaping to the outer shape of the sealant 31 of diaphragm seal 4.Specifically, the main shaft of cutting member 45 to be unrolled movement, while make rotary cutter rotate relative to main shaft, to cut and to remove redundance 35 relative to semiconductor device 1.
In addition, never illustrated blow-off outlet blows out the gases such as such as air to semiconductor device 1, and makes the suction device action that is connected with suction port 23.
The cutting swarf produced because of the cutting of redundance 35 to be blown from semiconductor device 1 by the gas that blows out from blow-off outlet and flies, and discharges from housing 22 by being attracted from suction port 23.
Utilize cutting member 45 to cut off redundance 35 while the sealant 31 of diaphragm seal 4 is formed as shape identical with substrate 3 under top view.Thus, the outer shape of semiconductor device 1 is shaped.
Then, as shown in Fig. 3 (h), utilize the 3rd Handling device to be carried from the second removing device 18 to semiconductor device retracting device 40 by the semiconductor device 1 after shaping.
Specifically, in semiconductor device retracting device 40, utilize the 3rd Handling device to accommodate not shown semiconductor device 1.Thus, the box of semiconductor device 1 is contained.
And, the manufacture method of the semiconductor device 1 implemented according to using above-mentioned manufacturing installation 10, prepare diaphragm seal 4 and multiple semiconductor element 2, then, utilize diaphragm seal 4 to be sealed in the lump by multiple semiconductor element 2, then, reclaim diaphragm seal 4 and multiple semiconductor element 2, therefore, it is possible to sealed in the lump by multiple semiconductor element 2, manufacture the semiconductor device 1 possessing multiple semiconductor element 2 easily.Therefore, it is possible to use multiple semiconductor element 2 by the semiconductor device 1 of diaphragm seal 4 good seal according to various object and purposes.
In addition, according to this manufacture method, owing to removing balance 36 (single dotted broken line and Fig. 4 with reference to Fig. 2 (b)) and the redundance 35 (with reference to Fig. 3 (g)) of diaphragm seal 4, therefore, it is possible to the semiconductor device 1 of shape desired by obtaining.
In other words, as shown in the single dotted broken line of Fig. 2 (b), by removing the balance 36 of diaphragm seal 4, in the positioning process shown in Fig. 2 (d), the positioning precision relative to substrate 3 and multiple semiconductor element 2 of hermetic unit 55 can be improved.
In addition, as shown in Fig. 3 (g), by removing the redundance 35 of sealant 31, as shown in Fig. 3 (f), can shaping be carried out to the outer shape of semiconductor device 1 and obtain the high semiconductor device of dimensional accuracy 1.
In addition, according to this manufacture method, according to implemented by not shown positioner, the positioning process that positions relative to multiple semiconductor element 2, can with the multiple semiconductor element 2 of close tolerance seal.Therefore, it is possible to manufacture semiconductor device 1 with high accuracy.
In addition, according to this manufacture method, according to implemented by the carrying heater 16 of sealing device 12 and the second stripping off device 50 and the supports heaters 62 of the second stripping off device 50, control diaphragm seal 4 temperature diaphragm seal temperature control operation, effectively can prevent the distortion of the diaphragm seal 4 after sealing multiple semiconductor element 2.Therefore, it is possible to the semiconductor device 1 of shape desired by manufacturing.
In addition, according to this manufacture method, according to the preparation heating process that carrying heater 16 and the mounting heater 61 by mounting apparatus 51 is implemented, diaphragm seal 4 is made to become soft, then, according to the formal heating process implemented by hot stamping device 26, can reliably sealing semiconductor element 2.Therefore, it is possible to make diaphragm seal 4 easily be shaped as desired shape, and described diaphragm seal 4 can be utilized to carry out sealing semiconductor element 2.Consequently, the semiconductor device 1 of desired shape can be manufactured.
In addition, according to this manufacture method, atmosphere temperature/the humidity conditioner (not shown) of preparation device 11 is utilized to control temperature and/or the humidity of the atmosphere of the diaphragm seal 4 in preparation device 11, therefore, it is possible to adjust the situation of the diaphragm seal 4 before sealing semiconductor element 2, and keep with constant quality and keeping and carrying semiconductor device 1.Therefore, it is possible to improve the precision of the sealing of diaphragm seal 4 pairs of semiconductor elements 2.
According to this manufacture method, in the preparatory process implemented by preparation device 11, remove the redundance 35 of diaphragm seal 4 and shaping carried out to the outer shape of diaphragm seal 4, therefore, it is possible to utilize the diaphragm seal after shaping 4 to carry out sealing semiconductor element 2 with the operability of excellence.
In addition, according to this manufacture method, peel ply 32 can be utilized to protect diaphragm seal 4, and by the first stripping process and the second stripping process, the unwanted peel ply 32 of sealing of semiconductor element 2 can be peeled off from diaphragm seal 4.Specifically, by the first stripping process implemented by the first stripping off device 49, the second peel ply 34 being laminated in the lower surface of sealant 31 can be peeled off from sealant 31.In addition, by the second stripping process implemented by the second stripping off device 50, the first peel ply 33 being laminated in the upper surface of sealant 31 can be peeled off from sealant 31.
In addition, such as, under first pressed sheet 27 and the second pressed sheet 28 of hot stamping device 26 are formed the situation (not being formed as flat situation) of the recess corresponding with the diaphragm seal 4 after sealing and semiconductor element 2 respectively, need by the substrate 3 being placed with diaphragm seal 4 to after being positioned at the position corresponding with the recess of the first pressed sheet 27, substrate 3 is embedded recess.
On the other hand, in the execution mode of Fig. 2, because the first pressed sheet 27 of hot stamping device 26 and the second pressed sheet 28 are formed as tabular, therefore, it is possible to the substrate 3 being placed with diaphragm seal 4 to be placed in the arbitrary position of the upper surface of the first pressed sheet 27.Therefore, it is possible to less operation rapidly and implement sealing process simply.
< second execution mode >
In Fig. 5 and Fig. 6, for the component identical with the first execution mode, mark identical Reference numeral, and omit its detailed description.
In this second embodiment, as shown in Figure 5, reverse before and after the configuration that the second stripping off device 50 and second in retracting device 13 removes device 18, in other words, the second stripping off device 50 is configured in the front side of the second removing device 18.In addition, the second removing device 18 is configured in the region identical with sealing device 12.
In sealing device 12, as shown in Fig. 6 (e), the first pressed sheet 27, comprising the second pressed sheet 28 to when pressing direction and above-below direction projection, specifically, is formed larger than the second pressed sheet 28.
First pressed sheet 27 is formed as, the shape identical with substrate 3 and the first peel ply 33 when vertically projecting.
As shown in Fig. 6 (g), the second removing device 18 possesses the second cut-out component 46.
Second cuts off the component 46 section roughly コ word shape open in downside, specifically, by the roughly writing board shape extended along fore-and-aft direction and left and right directions support 58 and be integrally formed from the cutter 47 that the peripheral end portion of support 58 hangs down.
Support 58 comprises the second pressed sheet 28 when vertically projecting, specifically, formed more bigger than the second pressed sheet 28.
, but cutter 47 such as bottom is formed as sharp keen shape in Fig. 6 (e) although not shown, as cutter 47, such as, enumerates Thomson cutter etc.In addition, cutter 47 is not overlapping with the perspective plane of the second pressed sheet 28 when vertically projecting, and is supported on support 58 in the mode be configured in around it.Specifically, the mode that cutter 47 becomes the position identical with the lateral surface of the second pressed sheet 28 with its medial surface when vertically projecting is formed.The length (above-below direction length) of cutter 47 sets longer than the aggregate thickness of hot stamping device 26 and semiconductor device 1.
Utilizing the second execution mode in the method manufacturing semiconductor device 1, as shown in Fig. 6 (e), in hot stamping device 26, drop stamping being carried out to diaphragm seal 4, then, implementing the second removing/trimming.
That is, in the second removing/trimming, the punching press state that maintaining heat decompressor 26 carries out, while cut off second the top that component 46 is configured in hot stamping device 26, then, as shown in the arrow of Fig. 6 (e), the second cut-out component 46 is declined towards the first pressed sheet 27.Specifically, in the mode making the medial surface of cutter 47 slide relative to the lateral surface of the second pressed sheet 28, second cut-out component 46 is declined.
Thus, when vertically projecting, cutter 47 is utilized once to be cut off by the redundance 35 stretched out laterally from the first peel ply 33.Specifically, redundance 35 is by cutter 47 and the first pressed sheet 27 crush-cutting.
While the cut-out of redundance 35, the outer shape of the sealant 31 of diaphragm seal 4, specifically, the plan view shape of semiconductor device 1 is by a shaping.
Then, component 46 and the second pressed sheet 28 are cut off in pull-up second successively, take out the semiconductor device 1 after shaping, then, as shown in Fig. 6 (g), utilize the second stripping off device 50 to be peeled off from sealant 31 by first peel ply 33.
Then, according to this manufacture method, in the second removing/trimming, while utilizing the second cut-out component 46 with cutter 47 of Fig. 6 (e) to be cut off by redundance 35, shaping is carried out to the outer shape of diaphragm seal 4, therefore, it is possible to once implement the cut-out of redundance 35 and the shaping of diaphragm seal 4 simultaneously.Therefore, it is possible to reduce manufacturing man-hours, and semiconductor device 1 can be obtained simply.
< the 3rd execution mode >
In Fig. 7 ~ Fig. 9, for the component identical with the first execution mode and the second execution mode, mark identical Reference numeral, and omit its detailed description.
As shown in Figure 1, the semiconductor device 1 of the 3rd execution mode possesses the preparation device 11, sealing device 12 and the retracting device 13 that are formed with the configuration identical with the first execution mode.
In addition, as shown in Figure 7 and Figure 8, the first peel ply 33 is formed with the stripping aperture 63 in full thickness direction.Stripping aperture 63 relative to correspondence a substrate 3 and be provided with one.
As shown in Fig. 9 (e), be formed from the upwardly projecting protuberance 65 of the part of surrounding at the central portion of the second pressed sheet 28, be formed with the punching hole 48 as receiving portion of through above-below direction at the central portion of this protuberance 65.Punching hole 48 is formed as the shape identical with the stripping aperture 63 of the first peel ply 33, identical size.
In addition, the above-below direction length of protuberance and the opening flat cutting area of punching hole 48 be set in can accept redundance 35 described later fully scope in.
In addition, the upper surface of the second pressed sheet 28 is provided with weir portion 64.Weir portion 64 is configured to the plan view shape corresponding with substrate 3 being placed in around the substrate 3 on the second pressed sheet 28, specifically, is configured to overlook in roughly toroidal.The thickness (above-below direction height) in weir portion 64 is set as limiting the thickness making redundance 35 exceed weir portion 64 because of drop stamping to stretch out laterally, specifically, formed identical or thicker than the aggregate thickness of the first pressed sheet 27 and semiconductor device 1 with the aggregate thickness of the first pressed sheet 27 and semiconductor device 1.
Utilizing the 3rd execution mode in the method manufacturing semiconductor device 1, as shown in Figure 7 and Figure 8, in preparatory process, prepare the diaphragm seal 4 possessing the first peel ply 33 being formed with stripping aperture 63.As shown in Fig. 8 (b), in the first removing/trimming, while dividing balance 36 and hermetic unit 55 by stocking cutter 44, stripping aperture 63 is formed at the first peel ply 33.
In addition, as shown in Fig. 9 (e), substrate 3 is placed on the upper surface of the first pressed sheet 27 in the mode be housed in weir portion 64.Specifically, when vertically projecting, in the mode making the punching hole 48 of the second pressed sheet 28 and stripping aperture 63 become same position, substrate 3 is placed on the first pressed sheet 27.
Then, as shown in Fig. 9 (f), utilize the second pressed sheet 28 pairs of diaphragm seals 4 to carry out drop stamping.
So be limited to exceed weir portion 64 by the diaphragm seal 4 of the second pressed sheet 28 drop stamping and stretch out laterally, on the other hand, redundance 35 stretches out to stripping aperture 63 and punching hole 48.In other words, stretch out from sealant 31 towards upside.In other words, the direction (the first execution mode and second execution mode) outside direction, face of stretching out of redundance 35 is changed to upside.
Then, pull-up second pressed sheet 28, then, as shown in Fig. 9 (g), peels off the first peel ply 33 from sealant 31.
Then, as shown in Fig. 9 (h), as shearing device, utilize not shown lapping device etc. to cut off component to remove redundance 35, and make the upper surface of sealant 31 be formed as even surface.Removing redundance 35 such as uses the method carrying out along direction, face cutting off, such as, use and carry out along above-below direction the direction that cuts off, such as, use grinding etc.
And, according to this manufacture method, produce in operation at redundance, because the redundance 35 of the sealant 31 making diaphragm seal 4 at least stretches out in punching hole 48, thus, can redundance 35 be reliably accepted in punching hole 48, the sealing relative to semiconductor element 2 of diaphragm seal 4 can be improved.
In addition, according to this manufacture method, produce in operation at redundance, exceed weir portion 64 due to redundance 35 can be limited and stretch out, therefore, it is possible to promote that redundance 35 is to stretching out in punching hole 48, can form redundance 35 more reliably further.
< variation >
In the first embodiment, although utilize the second cut-out component 46 possessing cutter 47 cut off and remove redundance 35, laser etc. such as also can be utilized to carry out cutting off and removing.
In addition, in the third embodiment, although arrange the punching hole 48 of through above-below direction on the protuberance 65 of the second pressed sheet 28, but if redundance 35 can be accepted, be not limited to punching hole 48, such as, as shown in the imaginary line of Fig. 9 (e) and Fig. 9 (f), also can be formed open downwards and accept recess 66 towards upside depression.Utilize the inaccessible upper wall accepting the upside of recess 66, as shown in Fig. 9 (f), the second pressed sheet 28 covers diaphragm seal 4 when drop stamping whole.
In addition, in the third embodiment, although respectively arrange a stripping aperture 63 and punching hole 48, such as, also can arrange multiple.
In the first ~ three execution mode, although arrange multiple by semiconductor element 2 relative to a substrate 3, the quantity of semiconductor element 2 does not limit especially, although not shown, but such as, also semiconductor element 2 can be arranged one relative to a substrate 3.In other words, semiconductor device 1 possesses a semiconductor element 2.
In addition, in the first embodiment, as shown in Fig. 2 (d), in the preparation heating process that carrying heater 16 and the mounting heater 61 by mounting apparatus 51 is implemented, diaphragm seal 4 is configured in upside, and substrate 3 is configured in downside, but, such as, although not shown, but also can be contrary configuration, in other words, diaphragm seal 4 is configured in downside, and substrate 3 is configured in upside.Thereby, it is possible to prevent because preparation heating that the heat that produces is sagging, and can utilize and such as carry heater 16 grade and be bearing in from the downside of diaphragm seal 4 and prepare limpen diaphragm seal 4 heating process.Therefore, it is possible to maintain the shape of the sealant 31 of diaphragm seal 4, and can with the operability of excellence by stacked to diaphragm seal 4 and semiconductor element 2.
In addition, in the first embodiment, as shown in Fig. 2 (d), although diaphragm seal 4 is placed on the substrate 3 being provided with semiconductor element 2 in mounting apparatus 51, but be not limited thereto, such as, also the mounting apparatus 51 shown in Fig. 2 (d) can be doubled as the sealing device 12 shown in Fig. 3 (e), in sealing device 12, on the first pressed sheet 27 substrate 3 being provided with semiconductor element 2 being arranged on hot stamping device 26, then, diaphragm seal 4 is placed in is provided with on the substrate 3 of semiconductor element 2.
In addition, in the mounting process of diaphragm seal 4, not shown decompressor also can be utilized to make the atmosphere (space) in the housing of the atmosphere in mounting apparatus 51 (space) and/or collecting mounting apparatus 51 reduce pressure (becoming vacuum).Specifically, in advance above-mentioned atmosphere (space) is reduced pressure, then, diaphragm seal 4 is placed in and is provided with on the substrate 3 of semiconductor element 2.
Or, also can be first, diaphragm seal 4 is placed in and is provided with on the substrate 3 of semiconductor element 2, then, above-mentioned atmosphere (space) be reduced pressure.
In addition, in the first embodiment, as shown in Fig. 2 (d), although make substrate 3 for having the writing board shape of tabular surface and being illustrated, the shape of substrate 3 is not limited thereto.Such as, also can on the upper surface of substrate 3, form recess or form through hole on the substrate 3.Recess and through hole comprise the reference marks such as benchmark recess and datum hole, such as, are formed between the semiconductor element 2 that adjoins each other.As recess, such as, the upper portion incision enumerating substrate 3 is the V-shaped valley of substantially V-like shape, the upper portion incision of substrate 3 is the rectangular channel etc. of substantially rectangular shape.Through hole is such as formed in the mode of the thickness direction of through substrate 3.The plan view shape of recess and through hole is formed as suitable shape, does not limit especially.
It should be noted that, although foregoing invention presents as illustrative execution mode of the present invention, this only simple illustration, can not restrictively explain.Self-explantory variation of the present invention is also contained in above-mentioned claims to those skilled in the art.
Industrial applicibility
The present invention uses in the manufacture of various semiconductor device.
Description of reference numerals is as follows:
1 semiconductor device
2 semiconductor elements
3 substrates
4 diaphragm seals
10 manufacturing installations
11 preparation devices
12 sealing devices
13 retracting devices
35 redundances
45 cutting members
46 second cut off component
48 punching hole
64 weirs portion
66 accept recess
Claims (12)
1. a manufacture method for semiconductor device, being the manufacture method of the semiconductor device obtained by utilizing diaphragm seal to carry out sealing semiconductor element, it is characterized in that, comprising:
Prepare the preparatory process of described diaphragm seal and described semiconductor element;
After described preparatory process, utilize described diaphragm seal to seal the sealing process of described semiconductor element; And,
After described sealing process, reclaim the recovery process of described diaphragm seal and described semiconductor element,
Described sealing process comprises redundance and produces operation, produces in operation at this redundance, and two punching components that utilization clips described diaphragm seal and mutually opposing configuration carry out punching press to described diaphragm seal, while produce the redundance of described diaphragm seal,
Described recovery process comprises the removal step removing described redundance.
2. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Produce in operation at described redundance, described redundance stretched out to the direction orthogonal with the pressing direction of two described punching components,
Comprise trimming at described recovery process, in this trimming, the described redundance stretched out is cut off, and shaping is carried out to the outer shape of described diaphragm seal.
3. the manufacture method of semiconductor device according to claim 2, is characterized in that,
In described trimming, utilize and cut off component relative to first of the movement of carrying out unrolling of described diaphragm seal, cut off described redundance, while carry out shaping to the outer shape of described diaphragm seal.
4. the manufacture method of semiconductor device according to claim 2, is characterized in that,
In described trimming, utilize and have to cut off component at second of the blade arranged to not overlapping with the perspective plane of the described punching component of side mode during described pressing direction projection, while cutting off the redundance stretched out from described perspective plane, shaping is carried out to the outer shape of described diaphragm seal.
5. the manufacture method of semiconductor device according to claim 1, is characterized in that,
The described punching component of a side is formed the receiving portion of the redundance for accepting described diaphragm seal,
Produce in operation at described redundance, the redundance of described diaphragm seal is at least stretched out in receiving portion.
6. the manufacture method of semiconductor device according to claim 5, is characterized in that,
In described sealing process, described diaphragm seal is configured in the mode of being surrounded by weir portion and seals described semiconductor element,
Produce in operation at described redundance, limit described redundance and exceed described weir portion and the situation of stretching out.
7. a manufacturing installation for semiconductor device, is the manufacturing installation utilizing diaphragm seal to carry out the semiconductor device of sealing semiconductor element, it is characterized in that, possess:
Prepare the preparation device of described diaphragm seal and described semiconductor element;
Utilize ready described diaphragm seal to seal the sealing device of described semiconductor element; And,
Reclaim the retracting device of the described semiconductor element after by described diaphragm seal sealing,
Described sealing device is configured to, and utilizes two of mutually opposing configuration punching components to carry out punching press to described diaphragm seal, while produce the redundance of described diaphragm seal,
Described retracting device possesses the removing device removing described redundance.
8. the manufacturing installation of semiconductor device according to claim 7, is characterized in that,
Two described punching components are configured to, and described redundance is stretched out to the direction orthogonal with pressing direction,
Described removing device possesses apparatus for shaping, and the described redundance stretched out cuts off by this apparatus for shaping, and carries out shaping to the outer shape of described diaphragm seal.
9. the manufacturing installation of semiconductor device according to claim 8, is characterized in that,
Described apparatus for shaping possesses and cuts off component relative to first of the movement of carrying out along described orthogonal direction unrolling of described diaphragm seal,
Described first cuts off component is configured to, and is cut off by described redundance, while carry out shaping to the outer shape of described diaphragm seal.
10. the manufacture method of semiconductor device according to claim 8, is characterized in that,
Described apparatus for shaping possesses the second cut-out component, and this second cut-out component has the blade arranged in not overlapping with the perspective plane of the described punching component of the side mode when projecting to described pressing direction,
Described second cuts off component is configured to, and by while the redundance cut-out of stretching out from described perspective plane during described pressing direction projection, carries out shaping to the outer shape of described diaphragm seal.
The manufacturing installation of 11. semiconductor devices according to claim 7, is characterized in that,
The described punching component of a side is formed the receiving portion of the redundance for accepting described diaphragm seal,
Described receiving portion is configured to accept described redundance.
The manufacturing installation of 12. semiconductor devices according to claim 11, is characterized in that,
Described sealing device possesses the weir portion surrounding described diaphragm seal between two described punching components,
Described weir portion is configured to limit described redundance and exceedes described weir portion and the situation of stretching out.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-014667 | 2013-01-29 | ||
| JP2013014667 | 2013-01-29 | ||
| JP2013-053627 | 2013-03-15 | ||
| JP2013053627A JP2014168027A (en) | 2013-01-29 | 2013-03-15 | Manufacturing method and manufacturing apparatus of semiconductor device |
| PCT/JP2014/051233 WO2014119446A1 (en) | 2013-01-29 | 2014-01-22 | Production method and production device for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104969337A true CN104969337A (en) | 2015-10-07 |
Family
ID=51262160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480006575.2A Pending CN104969337A (en) | 2013-01-29 | 2014-01-22 | Production method and production device for semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2014168027A (en) |
| KR (1) | KR20150111927A (en) |
| CN (1) | CN104969337A (en) |
| SG (1) | SG11201505566WA (en) |
| TW (1) | TW201438118A (en) |
| WO (1) | WO2014119446A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110253780A (en) * | 2019-06-11 | 2019-09-20 | 扬州广泰化纤有限公司 | A kind of polyester bottle slice production equipment and its working method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002190565A (en) * | 2000-12-20 | 2002-07-05 | Taiyo Yuden Co Ltd | Hybrid ic and its manufacturing method |
| JP2008288238A (en) * | 2007-05-15 | 2008-11-27 | Lintec Corp | Sheet pasting apparatus and pasting method |
| JP2010109246A (en) * | 2008-10-31 | 2010-05-13 | Yaskawa Electric Corp | Semiconductor device, and method of manufacturing the same |
| US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
-
2013
- 2013-03-15 JP JP2013053627A patent/JP2014168027A/en not_active Withdrawn
-
2014
- 2014-01-22 CN CN201480006575.2A patent/CN104969337A/en active Pending
- 2014-01-22 SG SG11201505566WA patent/SG11201505566WA/en unknown
- 2014-01-22 KR KR1020157020251A patent/KR20150111927A/en not_active Application Discontinuation
- 2014-01-22 WO PCT/JP2014/051233 patent/WO2014119446A1/en active Application Filing
- 2014-01-28 TW TW103103158A patent/TW201438118A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002190565A (en) * | 2000-12-20 | 2002-07-05 | Taiyo Yuden Co Ltd | Hybrid ic and its manufacturing method |
| JP2008288238A (en) * | 2007-05-15 | 2008-11-27 | Lintec Corp | Sheet pasting apparatus and pasting method |
| JP2010109246A (en) * | 2008-10-31 | 2010-05-13 | Yaskawa Electric Corp | Semiconductor device, and method of manufacturing the same |
| US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110253780A (en) * | 2019-06-11 | 2019-09-20 | 扬州广泰化纤有限公司 | A kind of polyester bottle slice production equipment and its working method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150111927A (en) | 2015-10-06 |
| TW201438118A (en) | 2014-10-01 |
| SG11201505566WA (en) | 2015-08-28 |
| JP2014168027A (en) | 2014-09-11 |
| WO2014119446A1 (en) | 2014-08-07 |
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Application publication date: 20151007 |