CN104952967A - 一种ZnO基薄膜晶体管型紫外探测器及其制备方法 - Google Patents
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Abstract
本发明公开了一种ZnO基薄膜晶体管型紫外探测器及其制备方法,该紫外探测器自下而上依次有低阻Si层、SiO2绝缘层、ZTO沟道层、纳米Al颗粒层和Al电极。其制备方法如下:先采用燃烧法制备ZTO前驱体,然后将前驱体溶液旋涂在Si/SiO2的SiO2面上,旋涂数次并退火,再用热蒸发在ZTO表面蒸镀上一层纳米Al颗粒,最后镀上Al电极完成紫外探测器的制作。相比于传统的紫外探测器,此方法制备的紫外探测器暗电流低、响应灵敏度极高,且结构简单、制备成本低,在军事、民用以及一些特殊领域有重要的应用价值。
Description
技术领域
本发明涉及一种紫外探测器及其制备方法,尤其涉及一种ZnO基薄膜晶体管型紫外波段探测器及其制备方法,属于半导体器件技术领域。
背景技术
紫外探测技术是一项继红外探测技术和激光技术之后发展起来的新型的军民两用技术,广泛应用于空间通讯、导弹预警、污染检测以及生物医学等领域。目前市场上还是以技术较成熟的传统商用光电倍增管和硅基紫外探测器为主。未见薄膜晶体管结构的紫外探测器报道。
ZnO是一种重要的新型宽禁带半导体材料,具有直接带隙能带结构,室温禁带宽度3.37 eV,激子束缚能高达60 meV,可见光透过率高,物理化学性质稳定,原料丰富等优点。相对于传统的光电倍增管和硅基紫外探测器,基于第三代宽禁带半导体ZnO基材料的紫外探测器可避免使用复杂昂贵的滤光片,并且其具有工作电压较低、能耗较小、体积小、重量轻等优点。
发明内容
本发明的目的是提供一种制备成本低、工艺简单易于生产,且灵敏度极高的ZnO基薄膜晶体管型紫外探测器及其制备方法。
本发明的ZnO基薄膜晶体管型紫外探测器,自下而上依次有低阻Si层、SiO2绝缘层、ZTO(ZnSnO)沟道层、纳米Al颗粒层和Al电极。制备方法包括以下步骤:
1)将Zn(NO3)2·6H2O溶解于2-甲氧基乙醇,并添加乙酰丙酮和NH3·H2O, Zn(NO3)2·6H2O、乙酰丙酮与NH3·H2O的摩尔比为1:1:3,室温下搅拌至少12 h,获得A溶液;
将SnCl2·2H2O和NH4NO3溶解于2-甲氧基乙醇,并添加乙酰丙酮和NH3·H2O, SnCl2·2H2O、NH4NO3、乙酰丙酮与NH3·H2O的摩尔比为1:1: 1:1.5,室温下搅拌至少12 h,获得B溶液;
用孔径为0.21 μm的尼龙滤头分别对A溶液和B溶液进行过滤,再将过滤后的两滤液按Zn:Sn摩尔比为x:1-x混合,x=0.3~0.5,将混合溶液超声至少5次,每次20~30 min,陈化12~24 h后得到ZnxSn(1-x)O前驱体,x=0.3~0.5;
2)在洁净的电阻率为0.001~0.005 Ω·cm的低阻Si片(1)上制备厚度为150~300 nm的SiO2绝缘层(2),再在SiO2绝缘层(2)上旋涂步骤1)的ZnxSn(1-x)O前驱体,转速为3500~4500 r/min,旋涂35 s,旋涂后在200~400 ℃退火30 min,旋涂并退火若干次后在SiO2绝缘层(2)上获得厚度为20~80 nm的ZTO沟道层(3);
3)将步骤2)处理后的样品放入热蒸发设备中,抽真空至2×10-4 Pa,以纯度为99.999%的Al颗粒为蒸发源,在ZTO沟道层(3)上蒸镀厚度为1~10 nm的纳米Al颗粒层(4);
4)在上述的纳米Al颗粒层(4)上蒸镀厚度为70~100 nm的Al电极(5),获得ZnO基薄膜晶体管型紫外探测器。
本发明的ZnO基薄膜晶体管型紫外探测器的工作原理是:在一定的源漏电压下,通过控制栅极偏压使紫外探测器工作在耗尽区,此时由于采用薄膜晶体管型的特殊结构,使得紫外探测器的暗电流很小;当有紫外光照射时,沟道层的ZTO吸收紫外光产生光生载流子,形成较大的源漏电流,即形成紫外探测器的光电流,进行紫外探测。
本发明的有益效果在于:
1)通过燃烧法配制ZTO前驱体,反应内能大,后续可在低温下退火;
2)本发明的紫外探测器采用薄膜晶体管型的特殊结构,具有极小的暗电流,可以获得高于其他类型紫外探测器数百倍的灵敏度;
3)本发明的紫外探测器结构简单,其制备方法简便且成本低,在军事、民用以及一些特殊领域有重要的应用价值。
附图说明
图1是ZnO基薄膜晶体管型紫外探测器的结构示意图。
图中:1为低阻Si层、2为SiO2绝缘层、3为ZTO沟道层、4为纳米Al颗粒层、5为Al电极。
具体实施方式
以下结合附图及具体实施例对本发明做进一步说明。
参照图1,本发明的ZnO基薄膜晶体管型紫外探测器,自下而上依次有低阻Si层1、SiO2绝缘层2、ZTO沟道层3、纳米Al颗粒层4和Al电极5。
实施例1
1)称取0.1275 g的Zn(NO3)2·6H2O溶解于2.14 mL的2-甲氧基乙醇,再加入0.09 mL的乙酰丙酮和49 μL的NH3·H2O,室温下搅拌12 h,获得A溶液;
称取0.2257 g的SnCl2·2H2O和0.0800g的NH4NO3溶解于5 mL的2-甲氧基乙醇,再加入0.2 mL的乙酰丙酮和57 μL的NH3·H2O,室温下搅拌12 h,获得B溶液;
用孔径为0.21 μm的尼龙滤头分别对A溶液和B溶液进行过滤,再将过滤后的两滤液按Zn:Sn摩尔比为0.3:0.7混合,将混合溶液超声5次,每次30 min,陈化12 h后得到Zn0.3Sn0.7O前驱体;
2)在洁净的电阻率为0.001~0.005 Ω·cm的低阻Si片(1)上制备厚度为300 nm的SiO2绝缘层(2),再在SiO2绝缘层(2)上旋涂步骤1)的Zn0.3Sn0.7O前驱体,转速为4000 r/min,旋涂35 s,旋涂后在300 ℃退火30 min,旋涂并退火5次后在SiO2绝缘层(2)上获得厚度为50 nm的ZTO沟道层(3);
3)将步骤2)处理后的样品放入热蒸发设备中,抽真空至2×10-4 Pa,以纯度为99.999%的Al颗粒为蒸发源,在ZTO沟道层(3)上蒸镀厚度为4 nm的纳米Al颗粒层(4);
4)在上述的纳米Al颗粒层(4)上蒸镀厚度为100 nm的Al电极(5),获得ZnO基薄膜晶体管型紫外探测器。
本例制得的ZnO基薄膜晶体管型紫外探测器灵敏度为:S=(Iphoto-Idark)/ Idark=(1365.5 μA-0.03229 μA)/0.03229 μA=42288。
实施例2
1)称取0.1785 g的Zn(NO3)2·6H2O溶解于3 mL的2-甲氧基乙醇,再加入0.12 mL的乙酰丙酮和68 μL的NH3·H2O,室温下搅拌12 h,获得A溶液;
称取0.2369 g的SnCl2·2H2O和0.0841 g的NH4NO3溶解于5.25 mL的2-甲氧基乙醇,再加入0.21 mL的乙酰丙酮和60 μL的NH3·H2O,室温下搅拌12 h获得B溶液;
用孔径为0.21 μm的尼龙滤头分别对A溶液和B溶液进行过滤,再将过滤后的两滤液按Zn:Sn摩尔比为0.36:0.64混合,将混合溶液超声6次,每次20 min,陈化24 h后得到Zn0.36Sn0.64O前驱体;
2)在洁净的电阻率为0.001~0.005 Ω·cm的低阻Si片(1)上制备厚度为150 nm的SiO2绝缘层(2),再在SiO2绝缘层(2)上旋涂步骤1)的Zn0.36Sn0.64O前驱体,转速为4500 r/min,旋涂35 s,旋涂后在200 ℃退火30 min,旋涂并退火3次后在SiO2绝缘层(2)上获得厚度为20 nm的ZTO沟道层(3);
3)将步骤2)处理后的样品放入热蒸发设备中,抽真空至2×10-4 Pa,以纯度为99.999%的Al颗粒为蒸发源,在ZTO沟道层(3)上蒸镀厚度为2 nm的纳米Al颗粒层(4);
4)在上述的纳米Al颗粒层(4)上蒸镀厚度为100 nm的Al电极(5),获得ZnO基薄膜晶体管型紫外探测器。
本例制得的ZnO基薄膜晶体管型紫外探测器灵敏度为:S=(Iphoto-Idark)/ Idark=(465.2 μA-0.01248 μA)/0.01248 μA=37275。
实施例3
1)称取0.2975 g的Zn(NO3)2·6H2O溶解于5 mL的2-甲氧基乙醇,再加入0.2 mL的乙酰丙酮和114 μL的NH3·H2O,室温下搅拌12 h,获得A溶液;
称取0.2257 g的SnCl2·2H2O和0.0800 g的NH4NO3溶解于5 mL的2-甲氧基乙醇,再加入0.2 mL的乙酰丙酮和57 μL的NH3·H2O,室温下搅拌12 h,获得B溶液;
用孔径为0.21 μm的尼龙滤头分别对A溶液和B溶液进行过滤,再将过滤后的两滤液按Zn:Sn摩尔比为0.5:0.5混合,将混合溶液超声5次,每次30 min,陈化18 h后得到Zn0.5Sn0.5O前驱体;
2)在洁净的电阻率为0.001~0.005 Ω·cm的低阻Si片(1)上制备厚度为300 nm的SiO2绝缘层(2),再在SiO2绝缘层(2)上旋涂步骤1)的Zn0.5Sn0.5O前驱体,转速为3500 r/min,旋涂35 s,旋涂后在300 ℃退火30 min,旋涂并退火5次后在SiO2绝缘层(2)上获得厚度为80 nm的ZTO沟道层(3);
3)将步骤2)处理后的样品放入热蒸发设备中,抽真空至2×10-4 Pa,以纯度为99.999%的Al颗粒为蒸发源,在ZTO沟道层(3)上蒸镀厚度为10 nm的纳米Al颗粒层(4);
4)在上述的纳米Al颗粒层(4)上蒸镀厚度为70 nm的Al电极(5),获得ZnO基薄膜晶体管型紫外探测器。
本例制得的ZnO基薄膜晶体管型紫外探测器灵敏度为:S=(Iphoto-Idark)/ Idark=(183.95 μA-0.01251 μA)/0.01251 μA=14703。
Claims (2)
1.ZnO基薄膜晶体管型紫外探测器,其特征在于,该探测器自下而上依次有低阻Si层(1)、SiO2绝缘层(2)、ZTO沟道层(3)、纳米Al颗粒层(4)和Al电极(5)。
2.制备权利要求1所述的ZnO基薄膜晶体管型紫外探测器的方法,其特征在于包括以下步骤:
1)将Zn(NO3)2·6H2O溶解于2-甲氧基乙醇,并添加乙酰丙酮和NH3·H2O, Zn(NO3)2·6H2O、乙酰丙酮与NH3·H2O的摩尔比为1:1:3,室温下搅拌至少12 h,获得A溶液;
将SnCl2·2H2O和NH4NO3溶解于2-甲氧基乙醇,并添加乙酰丙酮和NH3·H2O, SnCl2·2H2O、NH4NO3、乙酰丙酮与NH3·H2O的摩尔比为1:1: 1:1.5,室温下搅拌至少12 h,获得B溶液;
用孔径为0.21 μm的尼龙滤头分别对A溶液和B溶液进行过滤,再将过滤后的两滤液按Zn:Sn摩尔比为x:1-x混合,x=0.3~0.5,将混合溶液超声至少5次,每次20~30 min,陈化12~24 h后得到ZnxSn(1-x)O前驱体,x=0.3~0.5;
2)在洁净的电阻率为0.001~0.005 Ω·cm的低阻Si片(1)上制备厚度为150~300 nm的SiO2绝缘层(2),再在SiO2绝缘层(2)上旋涂步骤1)的ZnxSn(1-x)O前驱体,转速为3500~4500 r/min,旋涂35 s,旋涂后在200~400 ℃退火30 min,旋涂并退火若干次后在SiO2绝缘层(2)上获得厚度为20~80 nm的ZTO沟道层(3);
3)将步骤2)处理后的样品放入热蒸发设备中,抽真空至2×10-4 Pa,以纯度为99.999%的Al颗粒为蒸发源,在ZTO沟道层(3)上蒸镀厚度为1~10 nm的纳米Al颗粒层(4);
4)在上述的纳米Al颗粒层(4)上蒸镀厚度为70~100 nm的Al电极(5),获得ZnO基薄膜晶体管型紫外探测器。
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