CN106057908B - 一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管及其制备方法 - Google Patents

一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管及其制备方法 Download PDF

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CN106057908B
CN106057908B CN201610565701.9A CN201610565701A CN106057908B CN 106057908 B CN106057908 B CN 106057908B CN 201610565701 A CN201610565701 A CN 201610565701A CN 106057908 B CN106057908 B CN 106057908B
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潘新花
王伟豪
李辰旸
吕斌
叶志镇
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Zhejiang University ZJU
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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Abstract

本发明公开了一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，依次有低阻Si、SiO2绝缘层、Ag纳米线层、ZnO纳米晶层和Al电极。其制备方法如下：先采用浸渍提拉镀膜技术在Si/SiO2上制备Ag纳米线，再在Ag纳米线上旋涂ZnO纳米晶的分散相，退火后镀上Al电极完成该器件的制作。该器件退火后Ag纳米线中部分Ag扩散进入ZnO中取代Zn的晶格位置，使ZnO转变为p型导电，形成p型TFTs器件；同时该器件对365nm的紫外光具有响应。因此，该TFT不仅可以通过栅压调控，还可通过紫外光控制其开关。本发明在紫外探测器、紫外光控开关、光敏晶体管等光电器件领域具有重要的应用价值。

Description

一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体 管及其制备方法
技术领域
本发明涉及一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管及其制备方法，属于光电子功能器件领域。
背景技术
ZnO是一种重要的新型宽禁带半导体材料，具有直接带隙能带结构，室温禁带宽度3.37eV，激子束缚能高达60meV，可见光透过率高，物理化学性质稳定，原料丰富等优点，受到广大研究者的关注，成为半导体研究领域的热点。
相对于α-Si:H，氧化物TFTs具有很多优点，如：工艺温度低、处理温度窗口宽、迁移率高、开启电压低、栅绝缘层选择范围广、电极简单、光态电流低、均匀性好、表面平整等。由于氧化物TFTs的这些优点，使氧化物成为当前TFT技术研发关注的热点。
发明内容
本发明的目的是提供一种制备成本低、工艺简单易于生产，且多功能应用的基于Ag纳米线和ZnO纳米晶复合沟道的光电薄膜晶体管及其制备方法。
本发明的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，依次包括低阻Si、SiO2绝缘层、Ag纳米线层、ZnO纳米晶层和Al电极，所述的Ag纳米线层中的Ag纳米线均呈同向排列。
上述技术方案中，所述的Ag纳米线层为单层的Ag纳米线铺设在SiO2绝缘层上。
所述的低阻Si的电阻率为0.001～0.005Ω·cm。
所述的SiO2绝缘层厚度为150～300nm。
制备上述的多功能光电薄膜晶体管的方法，包括以下步骤：
1)以Ag纳米线的乙醇分散相为提拉源，采用浸渍提拉镀膜技术在洁净的低阻Si/SiO2衬底上制备Ag纳米线层：
2)采用旋涂法在制备好的Ag纳米线层上旋涂50mg/mL的ZnO纳米晶乙醇分散相，形成ZnO纳米晶层，旋涂转速为3000～5000r/min，旋涂时间30～40s，旋涂1～3次，旋涂后在80～400℃下退火处理1h；
3)在上述的ZnO纳米晶层上蒸镀厚度为70～100nm的Al电极，获得Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管。
所述的步骤1)中Ag纳米线的乙醇分散相浓度为0.05～0.1mg/mL，提拉速度为5～10μm/s。
本发明的有益效果在于：
1)本发明以Ag纳米线和ZnO纳米晶形成复合沟道，利用同向排列的Ag纳米线作为TFT沟通层的主要传输通道，可避免多晶薄膜中晶界的影响，极大地提高场效应迁移率；
2)Ag纳米线在退火后可部分扩散进入ZnO纳米晶取代Zn的晶格位置，使ZnO转变为p型导电，从而制备获得p型ZnO的TFTs器件；
3)本发明的晶体管不仅可以通过栅极电压调控，同时对365nm的紫外光有良好的响应，Ag纳米线的存在使其对紫外光的响应极快，因此可实现光控晶体管，应用于光控开关、光敏晶体管、紫外探测器等领域。
附图说明
图1是Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管的结构示意图。
图2是Ag纳米线在SiO2绝缘层上的分布示意图。
图中：1为低阻Si、2为SiO2绝缘层、3为Ag纳米线层、4为ZnO纳米晶层、5为Al电极。
具体实施方式
以下结合附图及具体实施例对本发明做进一步阐述。
参照图1，本发明的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，自下而上依次有低阻Si层1、SiO2绝缘层2、Ag纳米线层3、ZnO纳米晶层4和Al电极5，Ag纳米线层中Ag纳米线呈同向排列铺设于SiO2绝缘层上，如图2所示。所述的低阻Si电阻率为0.001～0.005Ω·cm，SiO2绝缘层厚度为150～300nm。
实施例1
1)衬底清洗：将低阻Si/SiO2衬底用丙酮、乙醇、去离子水分别超声清洗10min，最后用氮气吹干。
2)用0.1mg/mL的Ag纳米线乙醇分散相为提拉源，采用提拉法控制提拉速度为10μm/s，在洁净的Si/SiO2衬底上制备获得单层同向铺设于SiO2绝缘层2上的Ag纳米线，
3)采用旋涂法在制备好的Ag纳米线层3上旋涂50mg/mL的ZnO纳米晶乙醇分散相，形成ZnO纳米晶层4，旋涂转速为5000r/min，旋涂时间35s，旋涂2次，旋涂后在100℃下退火处理1h；
4)在上述的ZnO纳米晶层4上蒸镀厚度为100nm的Al电极5，获得Ag纳米线和ZnO纳米晶复合沟道的光电薄膜晶体管。
本例制得的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管的场效应迁移率μFE＝8.69cm2V-1s-1，对紫外光的响应时间常数为：τg＝0.26s；τd＝0.39s。
实施例2
1)衬底清洗：将低阻Si/SiO2衬底用丙酮、乙醇、去离子水分别超声清洗10min，最后用氮气吹干。
2)用0.05mg/mL的Ag纳米线乙醇分散相为提拉源，采用提拉法并控制提拉速度10μm/s，在洁净的Si/SiO2衬底上制备获得单层同向铺设于SiO2绝缘层2上的Ag纳米线，；
3)采用旋涂法在制备好的Ag纳米线层3上旋涂50mg/mL的ZnO纳米晶乙醇分散相，形成ZnO纳米晶层4，旋涂转速为3000r/min，旋涂时间35s，旋涂2次，旋涂后在150℃下退火处理1h；
4)在上述的ZnO纳米晶层4上蒸镀厚度为100nm的Al电极5，获得Ag纳米线和ZnO纳米晶复合沟道的光电薄膜晶体管。
本例制得的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管的场效应迁移率μFE＝1.74cm2V-1s-1，对紫外光的响应时间常数为：τg＝0.19s；τd＝0.28s。
实施例3
1)衬底清洗：将低阻Si/SiO2衬底用丙酮、乙醇、去离子水分别超声清洗10min，最后用氮气吹干。
2)用0.1mg/mL的Ag纳米线乙醇分散相为提拉源，采用提拉法并控制提拉速度5μm/s，在洁净的Si/SiO2衬底上制备获得单层同向铺设于SiO2绝缘层2上的Ag纳米线，；
3)采用旋涂法在制备好的Ag纳米线层3上旋涂50mg/mL的ZnO纳米晶乙醇分散相，形成ZnO纳米晶层4，旋涂转速为3000r/min，旋涂时间35s，旋涂1次，旋涂后在200℃下退火处理1h；
4)在上述的ZnO纳米晶层4上蒸镀厚度为100nm的Al电极5，获得Ag纳米线和ZnO纳米晶复合沟道的光电薄膜晶体管。
本例制得的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管的场效应迁移率μFE＝0.16cm2V-1s-1，对紫外光的响应时间常数为：τg＝1.03s；τd＝0.75s。

Claims (5)

1.一种Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，其特征是依次包括低阻Si（1）、SiO2绝缘层（2）、Ag纳米线层（3）、ZnO纳米晶层（4）和Al电极（5），所述的Ag纳米线层（3）为单层的Ag纳米线铺设在SiO2绝缘层（2）上，Ag纳米线层（3）中的Ag纳米线均呈同向排列。
2. 根据权利要求1所述的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，其特征是所述的低阻Si（1）的电阻率为0.001～0.005 Ω·cm。
3. 根据权利要求1所述的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管，其特征是所述的SiO2绝缘层（2）厚度为150～300 nm。
4.制备权利要求1-3任一项所述的多功能光电薄膜晶体管的方法，其特征在于包括以下步骤：
1）以Ag纳米线的乙醇分散相为提拉源，采用浸渍提拉镀膜技术在洁净的低阻Si/SiO2衬底上制备Ag纳米线层（3）；
2）采用旋涂法在制备好的Ag纳米线层（3）上旋涂50 mg/mL的ZnO纳米晶乙醇分散相，形成ZnO纳米晶层（4），旋涂转速为3000～5000 r/min，旋涂时间30～40 s，旋涂1～3次，旋涂后在80～400 ℃下退火处理1 h；
3）在上述的ZnO纳米晶层（4）上蒸镀厚度为70～100 nm的Al电极（5），获得Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管。
5. 如权利要求4所述的Ag纳米线和ZnO纳米晶复合沟道的多功能光电薄膜晶体管的制备方法，其特征在于，所述的步骤1）中Ag纳米线的乙醇分散相浓度为0.05～0.1 mg/mL，提拉速度为5～10 μm/s。
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