CN107452821B - 一种p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管及其制备方法 - Google Patents
一种p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，依次有低阻Si、SiO2绝缘层、SnO/Ag核壳结构纳米线沟道层和Au电极。其制备方法是先采用一步水热法合成SnO/Ag核壳结构纳米线，再采用溶剂蒸发法制备纳米线沟道，将器件退火后镀上Au电极完成该器件的制作。本发明通过SnO/Ag核壳结构形成肖特基结，当晶体管处于关态时限制载流子的注入，从而抑制晶体管的暗电流；由于沟道材料内部核心是金属Ag，当晶体管处于开态时，可以获得很高的场效应迁移率，提高晶体管的工作响应速度。同时该器件对360nm的紫外光具有响应。该光电薄膜晶体管器件在紫外探测器、紫外光控开关、光敏晶体管等光电器件领域具有重要的应用价值。
Description
技术领域
本发明涉及一种SnO/Ag肖特基结核壳结构纳米线沟道的p型多功能光电薄膜晶体管及其制备方法，属于光电子功能器件领域。
背景技术
SnO是最近几年发现的一种重要的宽禁带半导体材料，它是一种本征p型半导体材料，是目前p型金属氧化物半导体中最为看好的材料之一。其禁带宽度可在2.5～3.4eV之间变化，适合制备p型金属氧化物半导体器件。
相对于ZnO材料，SnO材料是本征p型半导体，不需要进行掺杂处理。并且SnO具有较高的迁移率，因此可以制造出性能优异的薄膜晶体管。另外，因为SnO的禁带宽度可调，因此SnO在发光及光探测领域具有巨大的发展潜力。
发明内容
本发明的目的是提供一种具有低漏电流、高场效应迁移率，基于SnO/Ag肖特基结核壳结构纳米线沟道的多功能p型薄膜晶体管及其制备方法。
本发明的SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是依次包括低阻Si(1)、SiO2绝缘层(2)、SnO/Ag纳米线层(3)和Au 电极(4)，所述的SnO/Ag纳米线层(3)中纳米线均呈同向排列铺设于SiO2绝缘层上。
所述的SnO/Ag纳米线层中纳米线是以Ag纳米线为核，外层包覆有SnO的核壳结构纳米线，SnO与Ag形成肖特基结，可以抑制载流子的注入，从而限制器件的漏电流。
进一步的，所述的SnO/Ag纳米线层中纳米线还可以是以Ag纳米线为核，外层包覆有SnO的核壳结构纳米线，所述的SnO为纳米棒形貌。
进一步的，所述的SnO/Ag纳米线层中纳米线的长度为2～10μm，直径为 100～300nm。
进一步的，所述的低阻Si(1)的电阻率为0.001～0.005Ω·cm。
进一步的，所述的SiO2绝缘层(2)厚度为150～300nm。
制备上述的多功能光电薄膜晶体管的方法，包括以下步骤：
1)采用一步水热法制备SnO/Ag核壳结构纳米线：
将异辛酸亚锡、油胺溶于乙醇和乙二醇的混合溶剂中，并加入Ag纳米线，搅拌均匀后在120～180℃下水热反应24～48h，反应结束后，将所得溶液离心清洗后，分散于乙醇中；
2)采用溶剂蒸发法制备SnO/Ag核壳结构纳米线沟道：
将Si/SiO2衬底清洗，再用氧等离子体清洗，清洗完后将衬底垂直浸没到步骤1获得的SnO/Ag纳米线乙醇分散液中，在30～60℃下蒸干溶剂，SnO/Ag 纳米线随着溶剂的蒸干自组装排列，形成SnO/Ag纳米线层(3)，在300～500℃下退火1h；
3)在上述的SnO/Ag纳米线层(3)上蒸镀厚度为70～100nm的Au电极(4)，获得SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管。
其中，进一步的，所述的乙醇与乙二醇体积比为1:1。
进一步的，所述的异辛酸亚锡、油胺的摩尔比为1:12。
本发明的有益效果在于：
1)本发明以异辛酸亚锡为锡源，并采用油胺辅助合成SnO，反应过程中油胺具有的还原性可以防止2价Sn离子的氧化，形成的SnO表面被油胺保护，得到的SnO可以在空气中稳定存在；
2)本发明以SnO为外壳包覆Ag纳米线为核心的核壳结构纳米线作为薄膜晶体管沟道，SnO与Ag形成肖特基接触，可以抑制载流子的注入，从而在晶体管处于关态时可以很好地抑制器件的暗电流；
3)利用同向排列的SnO/Ag纳米线作为TFT沟通层的传输通道，可避免多晶薄膜中晶界的影响，当晶体管导通时，核心Ag纳米线的存在可以极大地提高薄膜晶体管的场效应迁移率；
4)本发明的晶体管不仅可以通过栅极电压调控，同时对360nm的紫外光有良好的响应，Ag纳米线的存在使其对紫外光的响应极快，因此可实现光控晶体管，应用于光控开关、光敏晶体管、紫外探测器等领域。
附图说明
图1是SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管的结构示意图。
图2是SnO/Ag纳米线在SiO2绝缘层上的分布示意图。
图3是SnO/Ag核壳结构纳米线示意图。
图4为实例3制得的SnO/Ag核壳结构纳米线的电镜图。
图5为实施例3与对比例1中制得的纳米线的XRD对比图谱。
图中：1为低阻Si、2为SiO2绝缘层、3为SnO/Ag纳米线沟道层、4为Au 电极。
具体实施方式
以下结合附图及具体实施例对本发明做进一步阐述。
参照图1，本发明的SnO/Ag肖特基结核壳结构纳米线沟道的多功能p型薄膜晶体管，自下而上依次包括低阻Si(1)、SiO2绝缘层(2)、SnO/Ag肖特基结核壳结构纳米线沟道层(3)和Au电极(4)，所述的SnO/Ag纳米线层中的纳米线均呈同向排列，其中纳米线是以Ag纳米线为核，外层包覆有SnO的核壳结构纳米线，SnO与Ag形成肖特基结。纳米线的长度为2～10μm，直径为100～300 nm，外层的SnO根据合成条件的不同呈现出纳米颗粒，纳米棒和纳米花的形貌。所述的低阻Si的电阻率为0.001～0.005Ω·cm。所述的SiO2绝缘层厚度为150～300nm。
实施例1
1)水热法制备SnO/Ag核壳结构纳米线：
在25mL的水热釜中，以平均直径60nm，平均长度2μm的Ag纳米线为核心，加入2mg的Ag纳米线，165μL异辛酸亚锡，2mL油胺溶于5mL的乙醇和5mL的乙二醇的混合溶剂中，搅拌均匀后在180℃下水热反应24h。反应结束后，将所得溶液离心清洗后，分散在40mL的乙醇中。
2)溶剂蒸发法在洁净的Si/SiO2衬底上制备SnO/Ag核壳结构纳米线沟道：
将Si/SiO2衬底分别置于丙酮，乙醇，去离子水中超声清洗10min，再用氧等离子体清洗10min，清洗完后马上将衬底垂直浸没到SnO/Ag纳米线的乙醇溶液中，在35℃下蒸干溶剂，SnO/Ag纳米线随着溶剂的蒸干会自组装排列，形成SnO/Ag纳米线层(3)，在400℃下退火1h。
3)在上述的SnO/Ag纳米线层(3)上蒸镀厚度为70nm的Au电极(4)，获得p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管。
本例制得的SnO/Ag肖特基结核壳结构纳米线沟道的多功能p型薄膜晶体管的场效应迁移率μFE＝1.74cm2V-1s-1。
实施例2
1)水热法制备SnO/Ag核壳结构纳米线：
在25mL的水热釜中，以平均直径60nm，平均长度10μm的Ag纳米线为核心，加入2mg的Ag纳米线，165μL异辛酸亚锡，2mL油胺溶于5mL的乙醇和5mL的乙二醇的混合溶剂中，搅拌均匀后在120℃下水热反应48h。反应结束后，将所得溶液离心清洗后，分散在60mL的乙醇中。
2)溶剂蒸发法在洁净的Si/SiO2衬底上制备SnO/Ag核壳结构纳米线沟道：
将Si/SiO2衬底分别置于丙酮，乙醇，去离子水中超声清洗10min，再用氧等离子体清洗10min，清洗完后马上将衬底垂直浸没到SnO/Ag纳米线的乙醇溶液中，在35℃下蒸干溶剂，SnO/Ag纳米线随着溶剂的蒸干会自组装排列，形成SnO/Ag纳米线层(3)，在300℃下退火1h。
3)在上述的SnO/Ag纳米线层(3)上蒸镀厚度为70nm的Au电极(4)，获得p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管。
本例制得的SnO/Ag肖特基结核壳结构纳米线沟道的多功能p型薄膜晶体管的场效应迁移率μFE＝3.48cm2V-1s-1。
实施例3
1)水热法制备SnO/Ag核壳结构纳米线：
在25mL的水热釜中，以平均直径60nm，平均长度10μm的Ag纳米线为核心，加入2mg的Ag纳米线，165μL异辛酸亚锡，2mL油胺溶于5mL的乙醇和5mL的乙二醇的混合溶剂中，搅拌均匀后在150℃下水热反应36h。反应结束后，将所得溶液离心清洗后，分散在40mL的乙醇中。
2)溶剂蒸发法在洁净的Si/SiO2衬底上制备SnO/Ag核壳结构纳米线沟道：
将Si/SiO2衬底分别置于丙酮，乙醇，去离子水中超声清洗10min，再用氧等离子体清洗10min，清洗完后马上将衬底垂直浸没到SnO/Ag纳米线的乙醇溶液中，在40℃下蒸干溶剂，SnO/Ag纳米线随着溶剂的蒸干会自组装排列，形成SnO/Ag纳米线层(3)，在300℃下退火1h。
3)在上述的SnO/Ag纳米线层(3)上蒸镀厚度为70nm的Au电极(4)，获得p型SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管。
本例制得的SnO/Ag纳米线的电镜图如图4所示，可以看出，该纳米线中SnO 外壳以纳米棒的形式存在，SnO纳米棒直径为20-50nm，长度为80-150nm；制得的SnO/Ag肖特基结核壳结构纳米线沟道的多功能p型薄膜晶体管的场效应迁移率μFE＝6.26cm2V-1s-1，漏电流为10-11A。
对比例1
1)水热法制备SnO/Ag核壳结构纳米线：
在25mL的水热釜中，以平均直径60nm，平均长度10μm的Ag纳米线为核心，加入2mg的Ag纳米线，将165μL异辛酸亚锡溶于5mL的乙醇和5mL 的乙二醇的混合溶剂中，搅拌均匀后在150℃下水热反应36h。反应结束后，将所得溶液离心清洗后，分散在40mL的乙醇中。
后续步骤与实施例3相同，本例制得的产物的XRD图与本发明方法获得产物的XRD对比如图5所示，可以看出本例产物中明显具有SnO2的存在，即本发明通过油胺的加入可以有效地抑制SnO2的生成，有利于获得p型的薄膜晶体管。
对比例2
1)水热法制备SnO：
在25mL的水热釜中，165μL异辛酸亚锡，2mL油胺溶于5mL的乙醇和 5mL的乙二醇的混合溶剂中，搅拌均匀后在150℃下水热反应36h。反应结束后，将所得溶液离心清洗后，分散在40mL的乙醇中。
后续步骤与实施例3相同，本例制得的产物是以SnO作为沟道层的p型薄膜晶体管，其场效应迁移率μFE＝0.02cm2V-1s-1，漏电流为10-8A。
Claims (8)
1.一种SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管的制备方法，其特征在于，包括以下步骤：
1）采用一步水热法制备SnO/Ag核壳结构纳米线：
将异辛酸亚锡、油胺溶于乙醇和乙二醇的混合溶剂中，并加入Ag纳米线，
搅拌均匀后在120～180 ℃下水热反应24～48 h，反应结束后，将所得溶液离心清洗后，分散于乙醇中；
2）采用溶剂蒸发法制备SnO/Ag核壳结构纳米线沟道：
将Si/SiO2衬底清洗，再用氧等离子体清洗，清洗完后将衬底垂直浸没到步骤1）获得的SnO/Ag纳米线乙醇分散液中，在30～60 ℃下蒸干溶剂，SnO/Ag纳米线随着溶剂的蒸干自组装排列，形成SnO/Ag纳米线层（3），在300～500 ℃下退火1 h；
3）在上述的SnO/Ag纳米线层（3）上蒸镀厚度为70～100 nm的Au电极（4），获得SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管。
2.根据权利要求1所述的方法，其特征在于，所述的乙醇与乙二醇体积比为1:1。
3.根据权利要求1所述的方法，其特征在于，所述的异辛酸亚锡、油胺的摩尔比为1:12。
4.一种SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是，采用如权利要求1所述的方法制得，该晶体管依次包括低阻Si（1）、SiO2绝缘层（2）、SnO/Ag纳米线层（3）和Au电极（4），所述的SnO/Ag纳米线层（3）中纳米线均呈同向排列铺设于SiO2绝缘层上；所述的SnO/Ag纳米线层中纳米线是以Ag纳米线为核，外层包覆有SnO的核壳结构纳米线，SnO与Ag形成肖特基结。
5.根据权利要求4所述的SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是，所述的SnO/Ag纳米线层中纳米线是以Ag纳米线为核，外层包覆有SnO的核壳结构纳米线，所述的SnO为纳米棒形貌。
6. 根据权利要求4所述的SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是，所述的SnO/Ag纳米线层中纳米线的长度为2～10 μm，直径为100～300 nm。
7. 根据权利要求4所述的SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是所述的低阻Si（1）的电阻率为0.001～0.005 Ω·cm。
8. 根据权利要求4所述的SnO/Ag肖特基结核壳结构纳米线沟道的多功能光电薄膜晶体管，其特征是所述的SiO2绝缘层（2）厚度为150～300 nm。
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