CN104951166B - Transparent conductive film and the capacitive touch screen comprising it - Google Patents
Transparent conductive film and the capacitive touch screen comprising it Download PDFInfo
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Abstract
The present invention provides a kind of transparent conductive film and include its capacitive touch screen.The transparent conductive film includes：Transparent substrate layer and the ITO layer being arranged in transparent base layer surface, wherein ITO layer includes：First noncrystalline ITO layer, crystalline ITO layer and the second noncrystalline ITO layer, the first noncrystalline ITO layer are arranged on the surface of transparent substrate layer；Crystalline ITO layer is arranged on the surface of the separate transparent substrate layer of the first noncrystalline ITO layer；Second noncrystalline ITO layer is arranged on the surface far from the first noncrystalline ITO layer of crystalline ITO layer.The three-dimensional line unobvious of the transparent conductive film, impedance is relatively low, and cost is relatively low, and manufacture craft is simpler；Meanwhile silver or copper conduction printing layer of the ITO layer with transparent substrate layer and in subsequent technique have good adherence, ensure that transparent conductive film is with good performance, improve the continuity of technique productions.
Description
Technical field
The present invention relates to touch screen fields, in particular to a kind of transparent conductive film and include its capacitance touch
Screen.
Background technology
Adherence refers to the adhesive force of adjacent two layers, and then adherence is good greatly for adhesive force, in capacitive touch screen each layer it
Between preferable adherence ensure that the normal work of capacitive touch screen, ensure that capacitive touch screen is with good performance,
Adherence is bad, then the performance of capacitive touch screen is affected, and ITO layer is caused to peel off, conductive bad, or even cannot normal work
Make, therefore, the adherence quality between each layer directly affect the performance of capacitive touch screen, especially ITO layer with and its
Adherence between adjacent two layers influences bigger to the performance of capacitive touch screen.
ITO layer in capacitive touch screen in the prior art is typically crystalline ITO layer, crystalline ITO layer with and its under
The adherence of optical adjustment layer is poor, needs to do specially treated and just can guarantee preferable adherence, meanwhile, crystalline ITO layer with set
Adherence between silver or copper conductive layer placed on it is also poor, also to do specially treated ensure silver or copper conductive layer with
The adherence of crystalline ITO layer, and then ensure that capacitive touch screen is with good performance.
Therefore, there is an urgent need for a kind of specially treated adherences that do not need with regard to relatively good transparent conductive film and capacitive touch screen.
Invention content
It is existing to solve the main purpose of the present invention is to provide a kind of transparent conductive film and comprising its capacitive touch screen
There is the more apparent problem with adherence difference of the three-dimensional line of the transparent conductive film in technology.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of transparent conductive film, the electrically conducting transparent
Film includes：Transparent substrate layer and the ITO layer being arranged in transparent base layer surface, wherein above-mentioned ITO layer includes：First non-knot
Brilliant ITO layer, crystalline ITO layer and the second noncrystalline ITO layer, above-mentioned first noncrystalline ITO layer are arranged in above-mentioned transparent substrate layer
On surface；Above-mentioned crystalline ITO layer is arranged on the surface far from above-mentioned transparent substrate layer of the above-mentioned first noncrystalline ITO layer；On
The second noncrystalline ITO layer is stated to be arranged on the surface far from the above-mentioned first noncrystalline ITO layer of above-mentioned crystalline ITO layer.
Further, in the above-mentioned first noncrystalline ITO layer and/or the second noncrystalline ITO layer the weight content of Sn be 7%~
30%, further preferably the weight content of Sn is 1%~7% in above-mentioned crystalline ITO layer.
Further, the thickness of the above-mentioned first noncrystalline ITO layer is between 1~15nm, preferably between 5~10nm.
Further, the thickness of above-mentioned crystalline ITO layer is between 5~25nm, preferably between 10~20nm.
Further, the thickness of the above-mentioned second noncrystalline ITO layer is between 1~10nm, preferably between 1~5nm.
Further, above-mentioned transparent conductive film further includes：First optical adjustment layer and the second optical adjustment layer, the first optics
Adjustment layer is arranged between above-mentioned transparent substrate layer and above-mentioned first noncrystalline ITO layer；Second optical adjustment layer is arranged above-mentioned
Between first optical adjustment layer and above-mentioned first noncrystalline ITO layer.
Further, the refractive index of above-mentioned first optical adjustment layer is between 1.55~3.00, preferably 1.60~2.80
Between, the thickness of further preferred above-mentioned first optical adjustment layer is between 5nm~10 μm, still more preferably in the μ of 10nm~5
Between m.
Further, the refractive index of above-mentioned second optical adjustment layer is between 1.10~1.55, preferably 1.20~1.50
Between, the thickness of further above-mentioned second optical adjustment layer between 5~500nm, still more preferably 10~300nm it
Between.
Further, above-mentioned first optical adjustment layer is in titanium dioxide layer, zirconium oxide layer and niobium pentaoxide layer
One kind, preferably above-mentioned second optical adjustment layer are selected from magnesium fluoride layer, fluorination calcium layer and one kind in silicon dioxide layer.
Further, above-mentioned transparent conductive film further includes being arranged in above-mentioned transparent substrate layer far from the first optical adjustment layer
Surface on the first hardened layer.
Further, the pencil hardness of above-mentioned first hardened layer is between 4B~9H, preferably between 2B~5H.
Further, above-mentioned transparent conductive film further includes being arranged between transparent substrate layer and above-mentioned first optical adjustment layer
The second hardened layer.
Further, the thickness of above-mentioned second hardened layer is between 0.3~50 μm, preferably between 0.5~5 μm, into one
The thickness of step preferably above-mentioned first hardened layer is 0.1~5.0 μm bigger than the thickness of the second hardened layer, and still more preferably above-mentioned first
The thickness of hardened layer is 0.3~1.5 μm bigger than the thickness of the second hardened layer.
Further, the full light transmission rate of above-mentioned transparent substrate layer is more than 85%, the thickness of preferably above-mentioned transparent substrate layer
Between 10~500 μm, further preferably between 20~200 μm.
Further, the shrinking percentage in the mechanical movement direction of above-mentioned transparent substrate layer is more than 0 and is less than or equal to 0.5%, vertically
Shrinking percentage in mechanical movement direction is more than 0 and is less than or equal to 0.1%.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of capacitive touch screen, the condenser type
Touch screen includes above-mentioned transparent conductive film.
It applies the technical scheme of the present invention, the ITO layer in transparent conductive film is using the first noncrystalline ITO layer, crystalline ITO layer
Single layer of crystalline ITO layer in the prior art is replaced with the three-decker of the composition of the second noncrystalline ITO layer, it is increased noncrystalline
ITO layer will not be become crystalline state after the heat treatment process in later stage from non-crystalline, and be to maintain non-crystalline, and shrinking percentage is protected
It holds constant so that etching and the deformation of the front and back noncrystalline ITO layer of heating are smaller, and the stress difference between each layer greatly reduces, and one
Aspect alleviates the serious problem of the three-dimensional line of transparent conductive film, and the capacitive touch screen for obtaining low three-dimensional line is led with transparent
Conductive film；On the other hand, silver or copper conduction printing layer of the noncrystalline ITO layer with transparent substrate layer and in subsequent technique have well
Adherence ensure that transparent conductive film is with good performance, improve the continuity of technique productions.Meanwhile noncrystalline ITO layer
Impedance it is relatively low, so that it is met the needs of touch panel device in the prior art is enlarged, extend it in enlarged touch-control product
Application in market；In addition, the manufacture craft of the transparent conductive film is simpler, the production finished product of transparent conductive film is reduced.
Description of the drawings
The accompanying drawings which form a part of this application are used to provide further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation are not constituted improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 shows that a kind of exemplary embodiment of the application provides the cross-sectional view of transparent conductive film；And
Fig. 2 shows the cross-sectional views for the transparent conductive film that a kind of preferred embodiment of the application provides.
Specific implementation mode
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In a kind of typical embodiment of the application, a kind of transparent conductive film is provided, as shown in Figure 1, this transparent is led
Electrolemma includes transparent substrate layer 20 and the ITO layer 60 that is arranged on 20 surface of transparent substrate layer, wherein ITO layer 60 includes：First
Noncrystalline ITO layer 61, crystalline ITO layer 62 and the second noncrystalline ITO layer 63, the first noncrystalline ITO layer 61 are arranged in transparent base
On the surface of layer 20；Crystalline ITO layer 62 is arranged on the surface of the separate transparent substrate layer 20 of the first noncrystalline ITO layer 61；The
Two noncrystalline ITO layers 63 are arranged on the surface far from the first noncrystalline ITO layer 61 of crystalline ITO layer 62.
It refers to a kind of ITO that can become crystalline state from non-crystalline during heat treatment to crystallize ITO；The non-knot of the present invention
Brilliant ITO refers to a kind of ITO that will not become crystalline state from non-crystalline after heat treatment process.
ITO layer 60 in above-mentioned transparent conductive film is non-using the first noncrystalline ITO layer 61, crystalline ITO layer 62 and second
The three-decker of the composition of crystalline ITO layer 63 replaces single layer of crystalline ITO layer in the prior art, increased first noncrystalline ITO
Layer 61 and the second noncrystalline ITO layer 63 will not be become crystalline state after the heat treatment process in later stage from non-crystalline, and are to maintain
Non-crystalline, shrinking percentage remain unchanged so that etching and the deformation of the front and back ITO layer 60 of heating are smaller, the stress between each layer
Difference greatly reduces, on the one hand, alleviates the serious problem of the three-dimensional line of transparent conductive film, obtains the condenser type of low three-dimensional line
Touch screen transparent conductive film；On the other hand, silver or copper conduction of the ITO layer 60 with transparent substrate layer 20 and in subsequent technique print
Brush layer has good adherence, ensure that transparent conductive film is with good performance, improves the continuity of technique productions.Together
When, the impedance of the first noncrystalline ITO layer 61 and the second noncrystalline ITO layer 63 is relatively low, so that it is met touch screen in the prior art and sets
The demand of standby enlargement, extends its application in enlarged touch-control product market；In addition, the making work of the transparent conductive film
Skill is simpler, reduces the production finished product of transparent conductive film.
In order to make transparent conductive film have lower three-dimensional line, better adhesion force and smaller impedance, the application preferred
The weight content of Sn is 7%~30% in 61 and/or second noncrystalline ITO layer 63 of above-mentioned first noncrystalline ITO layer, i.e., first is non-
The weight content of one layer of Sn in crystalline ITO layer 61 and the second noncrystalline ITO layer 63 is the Sn of 7%~30% or the two
Weight content simultaneously be 7%~30%.When above-mentioned noncrystalline ITO layer (the i.e. first noncrystalline ITO layer 61 and/or the second non-knot
Brilliant ITO layer 63) Sn weight content be more than 7% when, be further ensured that ITO is not crystallized, transparent conductive film can reach better
Low solid line effect, adhesion force effect；When the weight content of Sn is less than 30%, the first noncrystalline ITO layer 61 and the second non-knot
The impedance of brilliant ITO layer 63 is smaller, meanwhile, light transmittance is higher, improves the optical characteristics of transparent conductive film.In order to further protect
Demonstrate,prove the low three-dimensional line effect and optical characteristics of transparent conductive film, the further preferred first noncrystalline ITO layer 61 of the application and/or
The weight content of Sn is 8%~20%, more preferably 15% in second noncrystalline ITO layer 63.
In order to further ensure the durability of ITO layer 60, the weight of Sn in the further preferably above-mentioned crystalline ITO layer 60 of the application
It is 1%~7% to measure content.
In another preferred embodiment of the application, the thickness of above-mentioned first noncrystalline ITO layer 61 is between 1~15nm.
When the thickness of first noncrystalline ITO layer 61 is more than 1nm, the impedance of this layer is smaller, can further meet transparent conductive film to resistance
Anti- requirement；When the thickness of the first noncrystalline ITO layer 61 is less than 15nm so that the impedance of transparent conductive film is smaller, and makes
Obtaining transparent conductive film has preferable appearance.Impedance is relatively low and the preferable transparent conductive film of appearance in order to further obtain, the application
The thickness of further preferred above-mentioned first noncrystalline ITO layer 61 is in 5~10nm.
In order to further ensure transparent conductive film has good durability, while ensureing that impedance is relatively low, low three-dimensional line effect
Fruit is preferable, adhesion force is preferable, and the thickness of the application preferably above-mentioned crystalline ITO layer 62 is between 5~25nm, when crystalline ITO layer 62
Thickness be more than 5nm when, can further improve transparent conductive film durability；When the thickness of crystalline ITO layer 62 is less than 25nm,
Can be further ensured that transparent conductive film has a preferable appearance, the thickness of further preferred crystalline ITO layer 62 10~
Between 20nm.
In another preferred embodiment of the application, the thickness of the second noncrystalline ITO layer 63 is between 1~10nm, and
When the thickness of two noncrystalline ITO layers 63 is more than 1nm, the impedance of the second noncrystalline ITO layer 63 is smaller, can further meet transparent
Requirement of the conductive film to impedance；When the thickness of the second noncrystalline ITO layer 63 is less than 10nm, it can equally make the resistance of transparent conductive film
It is anti-smaller, and it can be further ensured that with preferable appearance and optical property.In order to further obtain impedance it is relatively low and
The preferable transparent conductive film of appearance, the thickness of the preferably second noncrystalline ITO layer 63 is between 1~5nm.
It (including can in order to preferably reduce the optical characteristics difference generated between etched portions and non-etched portions after etching
Depending on the difference of transmission and reflection characteristic in optical range), and then the better transparent conductive film of low three-dimensional line effect is obtained, further
Improve the three-dimensional line phenomenon of transparent conductive film, as shown in Fig. 2, the application preferably clear conductive film includes the first optical adjustment layer 40
With the second optical adjustment layer 50, wherein the first optical adjustment layer 40 is arranged in transparent substrate layer 20 and the first amorphism ITO layer
Between 61；The setting of second optical adjustment layer 50 is stated in the first optical adjustment layer 40 and institute first between noncrystalline ITO layer 61.When saturating
When the refractive index of bright substrate layer 20 is more than 1.55, the second optical adjustment layer 50 can be not provided with.
In another preferred embodiment of the application, preferably the refractive index 1.55 of above-mentioned first optical adjustment layer 40~
Between 3.00, by controlling the refractive index of the first optical adjustment layer 40 in 1.55~3, ITO layer 60 can be further reduced
In etched portions and non-etched portions between optical characteristics (penetrate and reflection) difference.In order to further decrease electrically conducting transparent
Three-dimensional line in film, preferably between 1.60~2.80, between more preferably 1.76~2.80.Further preferred above-mentioned first light
The thickness of adjustment layer 40 is learned between 5nm~10 μm, still more preferably between 10nm~5 μm.
In another preferred embodiment of the application, the refractive index of above-mentioned second optical adjustment layer 50 is 1.10~1.55
Between, the high refractive index of the low-refraction of such second optical adjustment layer 50 and the first optical adjustment layer 40 cooperates so that
The aberration between etched portions and non-etched portions in ITO layer 60 greatly reduces.Low three-dimensional line effect is better in order to obtain
Transparent conductive film, the refractive index of further preferred second optical adjustment layer of the application 50 are further excellent between 1.20~1.50
It is selected between 1.34~1.45.
In order to further decrease three-dimensional line, the thickness of the application preferably above-mentioned second optical adjustment layer 50 5~500nm it
Between, preferably the thickness of above-mentioned second optical adjustment layer 50 is between 10~300nm.
In another preferred embodiment of the application, above-mentioned first optical adjustment layer 40 is selected from titanium dioxide layer, oxidation
Zirconium layer and one kind in niobium pentaoxide layer, preferably above-mentioned second optical adjustment layer 50 are selected from magnesium fluoride layer, fluorination calcium layer, ice crystal
Rock layers, organic fluoride nitride layer (such as DIC companies of Japan OP-4002, OP-4003, OP-4004；Daikin Industries UV1000, UV1100,
UV2100；Northeast chemical company KD4000 etc.) with silicon dioxide layer (including hollow silica layer) in one kind.
In another preferred embodiment of the application, as shown in Fig. 2, above-mentioned transparent conductive film further includes being arranged above-mentioned
The first hardened layer 10 on the surface far from the first optical adjustment layer 40 of transparent substrate layer 20, the first hardened layer 10 can be to saturating
Bright substrate layer 20, the first optical adjustment layer 40, the second optical adjustment layer 50 are protected with ITO layer 60, ensure transparent conductive film
Scratch resistance, scratch-proofness.
In another preferred embodiment of the application, the pencil hardness of above-mentioned first hardened layer 10 between 4B~9H,
When the hardness of the first hardened layer 10 is more than 4B, hardness is larger, can play preferable protective effect；When its hardness is less than 9H
When, its own winding is easier to and can further decrease cost of manufacture.In order to further ensure the guarantor of the first hardened layer 10
It protects performance and maintains lower production cost, the pencil hardness of further preferred first hardened layer 10 is between 2B~5H.
Further include second hard to protect transparent substrate layer 20, above-mentioned transparent conductive film before optical adjustment layer is set
Change layer 30, as shown in Fig. 2, the setting of above-mentioned second hardened layer 30 transparent substrate layer 20 and above-mentioned first optical adjustment layer 40 it
Between, preferably the refractive index of above-mentioned second hardened layer 30 is between 1.4~1.6.
In order to further ensure the protective value to transparent conductive film of the second hardened layer 30, while in view of being produced into
This, the preferably thickness of the second hardened layer 30, when the thickness of this layer is more than 0.3 μm, can preferably rise between 0.3~50 μm
To the effect of other layers of transparent conductive film of protection；And when its thickness is less than 50 μm, production cost is relatively low.In order to further protect
Demonstrate,proving the second hardened layer 30 can play a good protective effect, meanwhile, it is further ensured that its production cost is relatively low, the application preferably
The thickness of two hardened layers 30 is between 0.5~5.0 μm.
In another preferred embodiment of the application, the thickness of above-mentioned first hardened layer 10 is than above-mentioned second hardened layer 30
Thickness it is 0.1~5.0 μm big, the part of the thickness of 10 to the second hardened layer 30 of the first hardened layer greatly out can balance transparent base
The stress of the upper and lower surface of material layer 20 is alleviated the second hardened layer 30, is brought when ITO layer 60 is formed and subsequent heating process handles
Stress variation prevents transparent conductive film warpage, improves the effect of three-dimensional line.
In another preferred embodiment of the application, the full light transmission rate of above-mentioned transparent substrate layer 20 is more than 85%, thoroughly
It crosses rate and is more than 85%, can preferably meet the requirement of client.Transparent substrate layer 20 in the application refers to each institute of manufacturer
The thin layer of transparent plastic of production, generally includes pet layer, TAC layer, PC layers, PE layers or PP layers, but be not only confined to these
Transparent substrate layer 20.
In order to further ensure that the technique realizability of transparent substrate layer 20, while in view of the receipts of layer transparent substrate layer 20
Performance is rolled up, the thickness of the application preferably above-mentioned transparent substrate layer 20 is between 10~500 μm, the thickness control of transparent substrate layer 20
Within this range, the difficulty for further ensuring preparation process is relatively low, and cost is relatively low, and the winding of transparent substrate layer 20 is relatively held
Easily.After further contemplating existing production status and production cost, the thickness of further preferred above-mentioned transparent substrate layer 20 exists
Between 20~200 μm.
In another preferred embodiment of the application, the mechanical movement direction (Machine of above-mentioned transparent substrate layer 20
Direction, MD, also referred to as mechanical stretching direction) shrinking percentage be more than 0 be less than or equal to 0.5%, perpendicular to mechanical movement direction
The shrinking percentage of (Transverse Direction, TD, also referred to as perpendicular to mechanical stretching direction) is more than 0 and is less than or equal to 0.1%.When
The shrinking percentage in the mechanical movement direction of transparent substrate layer 20 is controlled with the shrinking percentage perpendicular to mechanical movement direction in above range
Interior, percent thermal shrinkage is relatively low, can further improve the three-dimensional line of transparent conductive film.In order to make the low three-dimensional line of transparent conductive film
Effect is more preferable, can also make resistance to heat treatment to transparent substrate layer 20 and the first hardened layer 10.
In production, if above-mentioned the first hardened layer and the second hardened layer occur coiled strip it is viscous glutinous when, can be hardened to first
Layer does surface roughening treatment with the second hardened layer.It is nanoscale such as to use multiple island areas protrusion, island area height of projection；Or hard
Change coating fluid in add particle, particle diameter in the micron-scale, surface roughness Ra that treated between 0.3nm~10 μm, into
The preferred Ra of one step is between 0.6nm~2.0 μm.
In another preferred embodiment of the application, a kind of capacitive touch screen, including transparent conductive film are provided, it should
Transparent conductive film is the above-mentioned transparent conductive film of any one.
Transparent conductive film in the capacitive touch screen has low three-dimensional line, disclosure satisfy that the requirement of client, simultaneously because
The impedance of transparent conductive film in the capacitive touch screen is relatively low so that capacitive touch screen may be implemented it is in large size, in turn
Meets the needs of touch panel device is enlarged in the prior art；In addition, the production work of the transparent conductive film of the capacitive touch screen
Skill is simpler so that the production cost of capacitive touch screen is relatively low.
In order to allow those skilled in the art more to have a clear understanding of the technical solution of the application, below with reference to embodiment with it is right
Ratio illustrates.
Embodiment 1
Using magnetron sputtering technique, the first amorphism ITO layer 61 is obtained successively on the surface of transparent substrate layer 20, tie
Crystalline substance ITO layer 62 and the second amorphism ITO layer 63, form transparent conductive film shown in FIG. 1.
The ITO layer 60 of transparent conductive film is performed etching using ink wire mark etching method, then, it is toasted, is dried
Roasting temperature is 150 DEG C, time 60min.The concrete structure parameter of transparent conductive film is shown in Table 1.
Embodiment 2
The hardening bath of model FZ001 of the coating selected from Huang Chuan chemical companies of Japan on the surface of transparent substrate layer 20,
Through drying, the first hardened layer 10 is made in solidification.Then profit is in the same way, hard far from above-mentioned first in transparent substrate layer 20
The hardening bath for changing model PC13-1082 of the surface coating selected from DIC companies of Japan of layer 10, is made the second hardened layer 30.
Using magnetron sputtering technique, the plated film on the surface far from above-mentioned transparent substrate layer 20 of the second hardened layer 30, according to
It is secondary to obtain the first optical adjustment layer 40 and the second optical adjustment layer 50 and ITO layer 60, form transparent conductive film shown in Fig. 2.
The ITO layer 60 of transparent conductive film is performed etching using ink wire mark etching method, then, it is toasted, is dried
Roasting temperature is 150 DEG C, time 60min.The concrete structure parameter of transparent conductive film is shown in Table 1.
Embodiment 3
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 4
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 5
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 101 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 6
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
The hardening bath of hardening bath, the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter is shown in Table 1.
Embodiment 7
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 8
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein transparent substrate layer 20 is the pet layer that toray company model is U483；It is coated with the first hardened layer
10 hardening bath is the hardening bath of the model FZ001 of Huang Chuan chemical companies of Japan；The hardening bath for being coated with the second hardened layer 30 is
The concrete structure parameter of the hardening bath of the model PC13-1082 of Japanese DIC companies, transparent conductive film is shown in Table 1.
Embodiment 9
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 10
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein transparent substrate layer 20 is the pet layer of Di Ren E.I.Du Pont Company model KEL86W；The first hardening of coating
The hardening bath of layer 10 is the hardening bath of the model FZ001 of Huang Chuan chemical companies of Japan, is coated with the hardening bath of the second hardened layer 30
Concrete structure parameter for the hardening bath of the model PC13-1082 of Japanese DIC companies, transparent conductive film is shown in Table 1.
Embodiment 11
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 12
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 13
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 14
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 15
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 16
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 17
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hard of the model PC13-1082 of DIC companies of Japan
Change liquid, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan, electrically conducting transparent
The concrete structure parameter of film is shown in Table 1.
Embodiment 18
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 2, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of the second hardened layer 30 of coating is the model PC13-1082 of DIC companies of Japan are transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Comparative example 1
On the surface for the pet layer that toray company model is U483, the model PC13- of DIC companies of coating Japan
The first hardened layer is made through dry solidification in 1082 hardening bath.Then, profit in the same way, in the remote of this PET base material layer
It is coated with the hardening bath of the model PC13-1082 of DIC companies of Japan on surface from above-mentioned first hardened layer, the second hardening is made
Layer.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of the second hardened layer sequentially forms
One optical adjustment layer, the second optical adjustment layer and ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1,
Comparative example 2
On the surface for the pet layer that toray company model is U483, the model PC13- of DIC companies of coating Japan
The first hardened layer is made through dry solidification in 1082 hardening bath.Then, profit in the same way, in the remote of this PET base material layer
It is coated with the hardening bath of the model PC13-1082 of DIC companies of Japan on surface from above-mentioned first hardened layer, the second hardening is made
Layer.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of the second hardened layer sequentially forms film
First optical adjustment layer, the second optical adjustment layer crystalline ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1.
Comparative example 3
On the surface of the pet layer of Di Ren E.I.Du Pont Company model LEL86W, Huang Chuan chemical companies of coating Japan model
The first hardened layer is made through dry solidification in the hardening bath of FZ001.Then, profit in the same way, in the remote of this PET base material layer
It is coated with the hardening bath of the model PC13-1082 of DIC companies of Japan on surface from above-mentioned first hardened layer, the second hardening is made
Layer.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of the second hardened layer sequentially forms film
First optical adjustment layer, the second optical adjustment layer and ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1.
Table 1
First, by the transparent conductive film of all embodiments and comparative example 50 μm of OCA glue-lines of LG chemical companies and greatly
Orangutan strengthened glass fits together, and the second noncrystalline ITO layer is contacted with gorilla strengthened glass, visually carries out transparent conductive film
The effect of the judgement of three-dimensional line, three-dimensional line gradually improves according to the sequence of A, B, C, D, E；Secondly, it is hindered using four probe method
It is anti-to be tested；Finally, it is plated on the surface of each embodiment and the second noncrystalline ITO layer of comparative example using magnetron sputtering technique
Thickness be 50nm layers of copper, using cross-cut tester test method to ITO layer in the transparent conductive film of these embodiments and comparative example with
The adherence of optical adjustment layer and layers of copper is tested, and the fine or not degree of adherence is indicated with nF, and n is bigger, and adherence is better, tool
Body examination test result is shown in Table 2.
Table 2
According to table 2：When the weight content of Sn in the first noncrystalline ITO layer and/or the second noncrystalline ITO layer is 7%
~30%, preferably between 8%~20%, the thickness of the more preferably 15%, first noncrystalline ITO layer is between 1~15nm, and
The thickness of two noncrystalline ITO layers is between 1~10nm；The weight content of Sn is 1%~7% in crystalline ITO layer, and thickness is 5
Between~25nm；The refractive index of first optical adjustment layer is between 1.55~3.00, and thickness is between 5nm~10 μm；Second light
The refractive index of adjustment layer is learned between 1.10~1.55, thickness is between 5~500nm；The thickness of second hardened layer is 0.3~50
Between μm；The thickness of first hardened layer is 0.1~5 μm bigger than the thickness of the second hardened layer, and the pencil hardness of the first hardened layer is in 4B
Between~9H, the shrinking percentage in mechanical movement direction is more than 0 and is less than or equal to 0.5%, the shrinking percentage perpendicular to mechanical movement direction
It is less than or equal to 0.1% more than 0；The full light transmission rate of transparent substrate layer is more than 85%, and thickness is between 10~500 μm, machine
The shrinking percentage of tool traffic direction is more than 0 and is less than or equal to 0.5%, and the shrinking percentage perpendicular to mechanical movement direction is less than or equal to more than 0
When 0.1%, the impedance of transparent conductive film is smaller；Adherence is preferable, and low solid line effect is also preferable, and its manufacturing process is only
3 techniques are needed, simple for process, production cost is relatively low.
It can be seen from the above description that the above embodiments of the present invention realize following technique effect：
ITO layer in the transparent conductive film of the application is noncrystalline using the first noncrystalline ITO layer, crystalline ITO layer and second
The three-decker of the composition of ITO layer replaces single layer of crystalline ITO layer in the prior art, and increased noncrystalline ITO layer is in the later stage
After heat treatment process, crystalline state will not be become from non-crystalline, and be to maintain non-crystalline, shrinking percentage remains unchanged so that erosion
It carves and the deformation of the front and back noncrystalline ITO layer of heating is smaller, the stress difference between each layer greatly reduces, on the one hand, alleviates
The serious problem of the three-dimensional line of bright conductive film obtains the capacitive touch screen transparent conductive film of low three-dimensional line；Another party
Face, silver or copper conduction printing layer of the noncrystalline ITO layer with transparent substrate layer and in subsequent technique have good adherence, ensure that
Transparent conductive film is with good performance, improves the continuity of technique productions.Meanwhile the impedance of noncrystalline ITO layer is relatively low, makes
It meets the needs of touch panel device is enlarged in the prior art, extends its application in enlarged touch-control product market；
In addition, the manufacture craft of the transparent conductive film is simpler, the production finished product of transparent conductive film is reduced.
Transparent conductive film in the capacitive touch screen of the application has low three-dimensional line, disclosure satisfy that the requirement of client, together
When due to the impedance of the transparent conductive film in the capacitive touch screen it is relatively low so that large scale may be implemented in capacitive touch screen
Change, and then meets the needs of touch panel device is enlarged in the prior art；In addition, the transparent conductive film of the capacitive touch screen
Production technology is simpler so that the production cost of capacitive touch screen is relatively low.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (33)
1. a kind of transparent conductive film includes ITO of the transparent substrate layer (20) with setting on the transparent substrate layer (20) surface
Layer (60), which is characterized in that the ITO layer (60) includes：
First noncrystalline ITO layer (61) is arranged on the surface of the transparent substrate layer (20)；
Crystalline ITO layer (62) is arranged on the surface far from the transparent substrate layer (20) of the described first noncrystalline ITO layer (61)
On；And
Second noncrystalline ITO layer (63) is arranged in the crystalline ITO layer (62) far from the described first noncrystalline ITO layer (61)
Surface on, in the heat treatment process in later stage, the first noncrystalline ITO layer (61) and the second noncrystalline ITO layer
(63) non-crystalline, shrinking percentage is kept to remain unchanged.
2. transparent conductive film according to claim 1, which is characterized in that the first noncrystalline ITO layer (61) and/or
The weight content of Sn is 7%~30% in two noncrystalline ITO layers (63).
3. transparent conductive film according to claim 1, which is characterized in that the weight of Sn contains in the crystalline ITO layer (62)
Amount is 1%~7%.
4. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the first noncrystalline ITO layer (61)
Degree is between 1~15nm.
5. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the first noncrystalline ITO layer (61)
Degree is between 5~10nm.
6. transparent conductive film according to claim 4, which is characterized in that the thickness of the crystalline ITO layer (62) 5~
Between 25nm.
7. transparent conductive film according to claim 4, which is characterized in that the thickness of the crystalline ITO layer (62) 10~
Between 20nm.
8. transparent conductive film according to claim 4, which is characterized in that the thickness of the second noncrystalline ITO layer (63)
Between 1~10nm.
9. transparent conductive film according to claim 4, which is characterized in that the thickness of the second noncrystalline ITO layer (63)
Between 1~5nm.
10. the transparent conductive film according to claim 1 or 8, which is characterized in that the transparent conductive film further includes：
First optical adjustment layer (40) is arranged between the transparent substrate layer (20) and the first noncrystalline ITO layer (61)；
And
Second optical adjustment layer (50) is arranged in first optical adjustment layer (40) and the described first noncrystalline ITO layer (61)
Between.
11. transparent conductive film according to claim 10, which is characterized in that the refraction of first optical adjustment layer (40)
Rate is between 1.55~3.00.
12. transparent conductive film according to claim 10, which is characterized in that the refraction of first optical adjustment layer (40)
Between rate 1.60~2.80.
13. transparent conductive film according to claim 10, which is characterized in that the thickness of first optical adjustment layer (40)
Between 5nm~10 μm.
14. transparent conductive film according to claim 10, which is characterized in that the thickness of first optical adjustment layer (40)
Between 10nm~5 μm.
15. transparent conductive film according to claim 10, which is characterized in that the refraction of second optical adjustment layer (50)
Rate is between 1.10~1.55.
16. transparent conductive film according to claim 10, which is characterized in that the refraction of second optical adjustment layer (50)
Rate is between 1.20~1.50.
17. transparent conductive film according to claim 10, which is characterized in that the thickness of second optical adjustment layer (50)
Between 5~500nm.
18. transparent conductive film according to claim 10, which is characterized in that the thickness of second optical adjustment layer (50)
Between 10~300nm.
19. transparent conductive film according to claim 10, which is characterized in that first optical adjustment layer (40) is selected from two
One kind in titanium oxide layer, zirconium oxide layer and niobium pentaoxide layer.
20. transparent conductive film according to claim 10, which is characterized in that second optical adjustment layer (50) is selected from fluorine
Change magnesium layer, fluorination calcium layer and one kind in silicon dioxide layer.
21. transparent conductive film according to claim 10, which is characterized in that the transparent conductive film further includes being arranged in institute
State the first hardened layer (10) on the surface far from the first optical adjustment layer (40) of transparent substrate layer (20).
22. transparent conductive film according to claim 21, which is characterized in that the pencil hardness of first hardened layer (10)
Between 4B~9H.
23. transparent conductive film according to claim 21, which is characterized in that the pencil hardness of first hardened layer (10)
Between 2B~5H.
24. transparent conductive film according to claim 21, which is characterized in that the transparent conductive film further includes being arranged saturating
The second hardened layer (30) between bright substrate layer (20) and first optical adjustment layer (40).
25. transparent conductive film according to claim 24, which is characterized in that the thickness of second hardened layer (30) exists
Between 0.3~50 μm.
26. transparent conductive film according to claim 24, which is characterized in that the thickness of second hardened layer (30) exists
Between 0.5~5 μm.
27. transparent conductive film according to claim 24, which is characterized in that the thickness of first hardened layer (10) is than
The thickness of two hardened layers (30) is 0.1~5.0 μm big.
28. transparent conductive film according to claim 24, which is characterized in that the thickness of first hardened layer (10) is than
The thickness of two hardened layers (30) is 0.3~1.5 μm big.
29. transparent conductive film according to claim 1, which is characterized in that the full light of the transparent substrate layer (20) penetrates
Rate is more than 85%.
30. transparent conductive film according to claim 1, which is characterized in that the thickness of the transparent substrate layer (20) is 10
Between~500 μm.
31. transparent conductive film according to claim 1, which is characterized in that the thickness of the transparent substrate layer (20) is 20
Between~200 μm.
32. transparent conductive film according to claim 24, which is characterized in that the mechanical movement of the transparent substrate layer (20)
The shrinking percentage in direction is more than 0 and is less than or equal to 0.5%, and the shrinking percentage perpendicular to the mechanical movement direction is less than or equal to more than 0
0.1%.
33. a kind of capacitive touch screen, including transparent conductive film, which is characterized in that the transparent conductive film be claim 1 to
Transparent conductive film described in any one of 32.
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| CN111086307A (en) * | 2020-01-03 | 2020-05-01 | 湖南中天碧水膜科技有限公司 | Shadow eliminating film and method for attaching protective film to shadow eliminating film |
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| JP2012172219A (en) * | 2011-02-23 | 2012-09-10 | Toppan Printing Co Ltd | Transparent conductive laminate, and method for producing the same |
| CN103201105A (en) * | 2010-11-11 | 2013-07-10 | 北川工业株式会社 | Transparent conductive film |
| CN103295667A (en) * | 2012-02-23 | 2013-09-11 | 群康科技(深圳)有限公司 | Composite conductive structure, manufacturing method thereof and display and touch panel with composite conductive structure |
| CN103756383A (en) * | 2013-12-17 | 2014-04-30 | 张家港康得新光电材料有限公司 | Anti-adhesion coating composition used for hard coating and corresponding double-sided hard coating |
| KR20140058062A (en) * | 2012-11-06 | 2014-05-14 | 삼성코닝정밀소재 주식회사 | Transparent conductive substrate and touch panel having the same |
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| CN102034565A (en) * | 2009-10-06 | 2011-04-27 | 日油株式会社 | Transparent conductive film |
| CN103201105A (en) * | 2010-11-11 | 2013-07-10 | 北川工业株式会社 | Transparent conductive film |
| JP2012172219A (en) * | 2011-02-23 | 2012-09-10 | Toppan Printing Co Ltd | Transparent conductive laminate, and method for producing the same |
| CN103295667A (en) * | 2012-02-23 | 2013-09-11 | 群康科技(深圳)有限公司 | Composite conductive structure, manufacturing method thereof and display and touch panel with composite conductive structure |
| KR20140058062A (en) * | 2012-11-06 | 2014-05-14 | 삼성코닝정밀소재 주식회사 | Transparent conductive substrate and touch panel having the same |
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