CN103295667A - Composite conductive structure, manufacturing method thereof and display and touch panel with composite conductive structure - Google Patents
Composite conductive structure, manufacturing method thereof and display and touch panel with composite conductive structure Download PDFInfo
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- CN103295667A CN103295667A CN2012100423399A CN201210042339A CN103295667A CN 103295667 A CN103295667 A CN 103295667A CN 2012100423399 A CN2012100423399 A CN 2012100423399A CN 201210042339 A CN201210042339 A CN 201210042339A CN 103295667 A CN103295667 A CN 103295667A
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Abstract
The invention discloses a composite conductive structure which comprises a first substrate and a first conductive layer. The first conductive layer is arranged on the first substrate, and the first conductive layer comprises a crystalline-state conductive film and a non-crystalline-state conductive film. The invention further discloses a manufacturing method of the composite conductive structure and a display and touch panel with the composite conductive structure. The composite conductive structure and the manufacturing method of the composite conductive structure can improve the situation that after the conductive layer is bent, disconnection is prone to occurring. Moreover, a display device manufactured by the application of the conductive layer can avoid the problem that circuit disconnection occurs after the conductive layer is bent or driving resistance becomes larger, and the durability and sensitivity of the display device are both expected to be improved.
Description
Technical field
The present invention relates to a kind of composite conducting structure, make the method for this kind composite conducting structure, and contact panel and display floater with this composite conducting structure, and particularly relevant for a kind of contact panel and display floater that has the composite conducting structure of crystalline state conducting film and noncrystalline attitude conducting film and have this kind composite conducting structure.
Background technology
Along with the progress of science and technology, be flooded with display miscellaneous in the life.The application of display is more prevalent, makes the exploitation of each element in the display become the target that manufacturer is studied.Wherein, the flexible element that is applied to display becomes popular research and development main body along with the exploitation of flexible display.Flexible display panel or the impact-resistant display floater of need can use flexible substrate as substrate usually, and use the pliability material as inner member.For instance, in order to apply the electrode structure of voltage, need make the flexual electric conducting material of apparatus be made into soft electrode in the flexible display.
Under large tracts of land and flexual trend development, in order to make large-area display screen, the transparency electrode in display and the contact panel also must large-area setting at display and contact panel.Therefore, large-area transparency electrode must have low resistance and flexual characteristics concurrently.(IndiumTin Oxide, ITO) made transparent soft electrode for reaching the characteristic of low resistance, must be prepared the ITO film of the thicker and highly crystalline of thickness with indium tin oxide.Yet the ITO film of the thicker and highly crystalline of thickness has the situation of cracked (crack) to take place after bending deflection repeatedly easily, also causes line broken circuit easily or drive resistance becoming big, further influences durability and the sensitivity of product.
Summary of the invention
The invention relates to a kind of conductive layer and have its display unit, this kind conductive layer possesses low resistance and good pliability simultaneously, can increase conductive layer effectively and have the durability of its display unit.
According to a first aspect of the invention, propose a kind of composite conducting structure, comprise one first substrate and one first conductive layer.First conductive layer is arranged on first substrate, and first conductive layer comprises a crystalline state conducting film and a noncrystalline attitude conducting film.
According to a second aspect of the invention, propose a kind of contact panel, comprise composite conducting structure as the aforementioned.
According to a third aspect of the invention we, propose a kind of display floater, comprise aforesaid composite conducting structure, one the 3rd substrate and a display dielectric layer.Display dielectric layer is arranged between composite conducting structure and the 3rd substrate, and first conductive layer is as a show electrode.
A kind of manufacture method of composite conducting structure is proposed according to a forth aspect of the invention.Method may further comprise the steps.Form one first substrate.Form the initial conduction film of a noncrystalline attitude on first substrate.Make initial conduction film upper surface carry out crystallization, and form a crystalline state conducting film and a noncrystalline attitude conducting film.
A kind of manufacture method of composite conducting structure is proposed according to a fifth aspect of the invention.Method may further comprise the steps.Form one first substrate.Form the initial conduction film of a noncrystalline attitude on first substrate.Make the initial conduction film carry out crystallization, and form a crystalline state conducting film.Form a noncrystalline attitude conducting film on the crystalline state conducting film.
The present invention constitutes the composite conducting structure by crystalline state conducting film and the noncrystalline attitude conducting film of crystalline state, the resistance of composite conducting structure is low or equal compared to the crystalline state conductive layer of single layer structure, and the resistance (resistance varying-ratio) of the resistance of composite conducting structure after deflection before divided by deflection is lower than the resistance varying-ratio of the crystalline state conductive layer of single layer structure.Therefore, composite conducting structure of the above embodiment of the present invention and preparation method thereof can be improved and easily causes the problem that opens circuit after the conductive layer deflection.And the made display unit of conductive layer of using the above embodiment of the present invention can be avoided after the deflection line broken circuit or drive resistance becoming big problem, makes the durability of display unit and sensitivity all be expected to promote.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, does not constitute limitation of the invention.In the accompanying drawings:
Figure 1A～Fig. 1 D illustrates the manufacturing process schematic diagram according to the conductive layer of one embodiment of the invention.
Fig. 2 A～Fig. 2 C illustrates the manufacturing process schematic diagram according to the conductive layer of another embodiment of the present invention.
Fig. 3 illustrates according to the made conductive layer of one embodiment of the invention and is applied in schematic diagram in the display floater.
Fig. 4～Fig. 8 illustrates according to the made conductive layer of one embodiment of the invention and is applied in schematic diagram in the contact panel of different aspects.
Drawing reference numeral:
3: display floater
4～8: contact panel
10,20,30,32,40,42,50,52,60,62,70,80,82: the composite conducting structure
100,200,300,320,400,420,500,520,600,620,700,800,820: substrate
120,220: the barrier layer
140,240: conductive material layer
140 ', 241: the crystalline state conducting film
160,242: noncrystalline attitude conducting film
310: display dielectric layer
410,510,610: adhesion coating
810: the gap control unit layer
M1, M2, M30, M32, M40, M42, M50, M52, M60, M62, M70, M72, M80, M82: conductive layer
Embodiment
For there is better understanding above-mentioned and other aspect of the present invention, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
First embodiment
Please refer to Figure 1A～Fig. 1 D, it illustrates the manufacturing process schematic diagram according to the first conductive layer M1 of one embodiment of the invention.Shown in Figure 1A, one substrate 100 is provided, the material of substrate 100 for example is polyethylene terephthalate (PET), PEN (PEN), Triafol T (TriacetateCellulose, TAC), Merlon (Polycarbonate, PC) or pi (Polyimide, PI).Then, as shown in Figure 1B, form a barrier layer (barrier layer) 120 on substrate 100, barrier layer 120 for example is with physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) or chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) mode is with silica (SiO
X), aluminium oxide (AlO
X) or zinc oxide (ZnO) be deposited on the substrate 100.The thickness on barrier layer 120 for example is that 10 nanometers (nm) are to 1000nm.Certainly, as long as barrier layer 120 can avoid substrate 100 to disengage the gases affect formation of conductive layer afterwards in manufacturing process, be not restricted.
Please then refer to Fig. 1 C, form a conductive material layer 140 on barrier layer 120.In this embodiment, conductive material layer 140 for example is the mode with the physical vapour deposition (PVD) of volume to volume (roll-to-roll), (Indium Tin Oxide, ITO) on barrier layer 120, the thickness of conductive material layer 140 is 10nm to 200nm to the deposition indium tin oxide.Please refer to Fig. 1 D, carry out the step of a thermal annealing crystallization earlier, with a hot-blast stove (oven) or infrared heater (IR Heater) conductive material layer 140 (being illustrated in Fig. 1 C) is heated, to form crystalline state conducting film 140 '.Then, for example to be the mode of the physical vapour deposition (PVD) of volume to volume, form noncrystalline attitude conducting film 160 (for example being non-crystalline state indium tin oxide) on crystalline state conducting film 140 ' (for example being the crystalline state indium tin oxide), the thickness of noncrystalline attitude conducting film 160 is 10nm to 200nm.
In this embodiment, composite conducting structure 10 comprises substrate 100, barrier layer 120 and the first conductive layer M1.The first conductive layer M1 comprises crystalline state conducting film 140 ' and noncrystalline attitude conducting film 160.Crystalline state conducting film 140 ' for example is the crystalline state of one first metal oxide, and first metal oxide for example is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide.Noncrystalline attitude conducting film 160 for example is the noncrystalline attitude of one second metal oxide, and second metal oxide for example is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide.In one embodiment, first metal oxide and second metal oxide can be selected same material for use.The resistance of the first conductive layer M1 is that (Ω/sq) is (Ω/sq) to 1000 for 10 ohm-sq.In addition, barrier layer 120 structures can be looked the demand of manufacturing process and be omitted.
Please refer to Fig. 1 D and table one.In Table 1, the resistance of the first conductive layer M1 (Ω/sq) that is 91.The conductive layer of individual layer crystalline state is arranged on the substrate and barrier layer with the substrate 100 of composite conducting structure 10 and barrier layer 120 the same terms, and the resistance of the conductive layer of the individual layer crystalline state (Ω/sq) that is 112.Resistance described herein for example is the linear resistance that measures two dissimilaritys of conductive layer distance 5 centimeters (cm) with avometer (multimeter).
Table one
Please refer to Fig. 1 D and table two.In table two, the resistance of the first conductive layer M1 is 81 (Ω/sq).The conductive layer of individual layer crystalline state is arranged on the substrate and barrier layer with the substrate 100 of composite conducting structure 10 and barrier layer 120 the same terms, and the resistance of the conductive layer of individual layer crystalline state is identical with the resistance of the first conductive layer M1, be 81 (Ω/sq).Resistance described herein for example is the linear resistance that measures two dissimilaritys of conductive layer distance 5 centimeters (cm) with avometer (multimeter).
Table two
In gross, though be with conductive layer outward or towards interior be that diameter is done deflection with 6mm or 10mm, no matter and the resistance of the crystalline state conducting film 140 ' of the first conductive layer M1 and noncrystalline attitude conducting film 160 is little (table one) or identical (table two) compared to the resistance of the conductive layer of individual layer crystalline state, the resistance (resistance varying-ratio) of resistance after the first conductive layer M1 deflection before divided by deflection is all less than the resistance (resistance varying-ratio) of the resistance after the conductive layer deflection of individual layer crystalline state before divided by deflection.Expression is good than the pliability of the conductive layer of individual layer crystalline state with the pliability of the first made conductive layer M1 of the method for the above embodiment of the present invention, the difficult line broken circuit that causes because of deflection.
Second embodiment
Please refer to Fig. 2 A～Fig. 2 C, it illustrates the manufacturing process schematic diagram according to the second conductive layer M2 of another embodiment of the present invention.Shown in Fig. 2 A, one substrate 200 is provided, the material of substrate 200 for example is identical with the substrate 100 of first embodiment, form a barrier layer 220 on substrate 200, the material on barrier layer 220, thickness and generation type are identical with barrier layer 120, and barrier layer 220 structures can be looked the demand of manufacturing process and be omitted.
Please then refer to Fig. 2 B, form a conductive material layer 240 on barrier layer 220.In this embodiment, the formation of conductive material layer 240 for example is with the mode of indium tin oxide (ITO) with the physical vapour deposition (PVD) of volume to volume, is deposited on the barrier layer 220.Then, please refer to Fig. 2 B～Fig. 2 C, carry out the step of a localized heat annealing crystallization, in this embodiment, for example with a laser light source first half (for example being the thick scope of upper surface 10nm to 200nm of conductive material layer 240) of conductive material layer 240 is carried out localized heating, to form crystalline state conducting film 241.At this moment, conductive material layer 240 position that is not subjected to the laser light source localized heating then forms noncrystalline attitude conducting film 242.
In this embodiment, crystalline state conducting film 241 for example is the crystalline state of one first metal oxide, and first metal oxide for example is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide.Noncrystalline attitude conducting film 242 for example is the noncrystalline attitude of one second metal oxide, and second metal oxide for example is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide.In one embodiment, first metal oxide and second metal oxide can be selected same material for use.
In this embodiment, the thickness of noncrystalline attitude conducting film 242 is 10nm to 200nm.Certainly, can be according to intensity, wavelength and the irradiation time of the demand modulation laser light source of manufacturing process to adjust the thickness of crystalline state conducting film 241 and noncrystalline attitude conducting film 242.That is crystalline state conducting film 241 is not restricted with the thickness of noncrystalline attitude conducting film 242.Wherein, composite conducting structure 20 comprises substrate 200, barrier layer 220, noncrystalline attitude conducting film 242 and crystalline state conducting film 241.Crystalline state conducting film 241 and noncrystalline attitude conducting film 242 constitute the second conductive layer M2.The resistance of the second conductive layer M2 is that (Ω/sq) is (Ω/sq) to 1000 for 10 ohm-sq.
The first conductive layer M1 that the method for application above-described embodiment is made and the second conductive layer M2 implement display floater and the contact panel of aspect in difference.
Fig. 3 illustrates according to the made first conductive layer M1 of one embodiment of the invention and the second conductive layer M2 both or one of them and is applied in schematic diagram in the different display floater such as display panels, organic LED display panel, Electronic Paper display floater.Please refer to Fig. 3, display floater 3 comprises composite conducting structure 30, display dielectric layer 310 and composite conducting structure 32.In this embodiment, composite conducting structure 30 comprises substrate 300 and the first conductive layer M30, and composite conducting structure 32 comprises the second conductive layer M32 and substrate 320.The material of substrate 300 and substrate 320 for example with first and second embodiment in substrate 100 and the identical flexible base plate of substrate 200.In addition, production method, thickness and the material of both or one of them of the first conductive layer M30 and the second conductive layer M32 can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.In addition, the demand that can look manufacturing process optionally arranges the barrier layer between the first conductive layer M30 and substrate 300, and the barrier layer optionally is set between the second conductive layer M32 and substrate 320.The first conductive layer M30 and the second conductive layer M32 are the electrode in the display floater, for example are pixel electrode, common electrode, scan line or data wire.
In this embodiment, display dielectric layer 310 for example be layer of liquid crystal molecule (liquid crystal layer), Organic Light Emitting Diode layer (organic light-emitting diode, OLED) or one have a plurality of microcapsules and be suspended in electronic ink layer (E-Ink) in the transparency liquid.When display dielectric layer 310 was layer of liquid crystal molecule, display floater 3 was display panels.When display dielectric layer 310 was the Organic Light Emitting Diode layer, display floater 3 was organic LED display panel.When display dielectric layer 310 was electronic ink layer, display floater 3 was the Electronic Paper display floater, and wherein each microcapsules all has band different electrical white particles and black particles and is coated in the adventitia.
Fig. 4～Fig. 8 illustrates according to the made first conductive layer M1 of one embodiment of the invention and the second conductive layer M2 both or one of them and is applied in the panel schematic diagram of the touch-control of different aspects.Wherein, Fig. 4～Fig. 7 illustrates the schematic diagram of capacitance type touch-control panel, and Fig. 8 illustrates the schematic diagram of electric resistance touch-control panel.Please refer to Fig. 4, contact panel 4 comprises composite conducting structure 40, adhesion coating 410 and composite conducting structure 42.In this embodiment, composite conducting structure 40 comprises substrate 400 and the first conductive layer M40, and composite conducting structure 42 comprises the second conductive layer M42 and substrate 420.The contact panel of this kind pattern is arranged on outermost with substrate.In this embodiment, the first conductive layer M40 and the second conductive layer M42 are the electrode in the contact panel, for example be sensing electrode or read electrode, production method, thickness and the material of the first conductive layer M40 and the second conductive layer M42 both or one of them can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.Adhesion coating 410 for example is an optics viscose glue.As shown in Figure 4, the first conductive layer M40 for example is a plurality of first patterned electrodes of arranging with first direction serial connection, the second conductive layer M42 for example is a plurality of second patterned electrodes of arranging with second direction serial connection, and first direction and second direction are inequality, to constitute the sensing electrode of contact panel 4.
Certainly, substrate can also be arranged at the conductive layer inboard.Please refer to Fig. 5, contact panel 5 comprises composite conducting structure 50, adhesion coating 510 and composite conducting structure 52.Wherein, composite conducting structure 50 comprises substrate 500 and the first conductive layer M50, and composite conducting structure 52 comprises the second conductive layer M52 and substrate 520.The first conductive layer M50 and the second conductive layer M52 are the electrode in the contact panel, for example be sensing electrode or read electrode, production method, thickness and the material of the first conductive layer M50 and the second conductive layer M52 both or one of them can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.Adhesion coating 510 for example is an optics viscose glue.The first conductive layer M50 for example is a plurality of first patterned electrodes of arranging with first direction serial connection, the second conductive layer M52 for example is a plurality of second patterned electrodes of arranging with second direction serial connection, and first direction and second direction are inequality, to constitute the sensing electrode of contact panel 5.
In addition, also can select one of them substrate to be arranged at the outside of conductive layer, another substrate is arranged at the inboard of conductive layer.As shown in Figure 6, contact panel 6 comprises composite conducting structure 60, adhesion coating 610 and composite conducting structure 62.Wherein, composite conducting structure 60 comprises substrate 600 and the first conductive layer M60, composite conducting structure 62 comprises the second conductive layer M62 and substrate 620, the first conductive layer M60 and the second conductive layer M62 are the electrode in the contact panel, for example for sensing electrode, read electrode or bucking electrode (shielding layer), production method, thickness and the material of the first conductive layer M60 and the second conductive layer M62 both or one of them can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.Adhesion coating 610 for example is an optics viscose glue.The first conductive layer M60 can comprise a plurality of first patterned electrodes of arranging with first direction serial connection, the second conductive layer M62 can comprise a plurality of second patterned electrodes of arranging with second direction serial connection, and first direction and second direction are inequality, to constitute the sensing electrode of contact panel 6.Yet the first conductive layer M60 can also comprise having a plurality of first patterned electrodes of arranging with first direction serial connection and a plurality of second patterned electrodes coplines (coplanar) arrangements of arranging with second direction serial connection simultaneously.At this moment, the second conductive layer M62 can be the conductive layer of patterning not, as a bucking electrode (shielding electrode).Certainly, the first conductive layer M60 also can be the conductive layer of patterning not, as a bucking electrode, the second conductive layer M62 then comprises having a plurality of first patterned electrodes of arranging with first direction serial connection and a plurality of second patterned electrodes coplines arrangements of arranging with second direction serial connection simultaneously.
Certainly, also conductive layer directly can be arranged at the both sides of substrate, as shown in Figure 7, contact panel 7 comprises composite conducting structure 70 and the second conductive layer M72.Composite conducting structure 70 comprises substrate 700 and the first conductive layer M70.The second conductive layer M72 and the first conductive layer M70 are arranged at the both sides of substrate 700 respectively, the first conductive layer M70 and the second conductive layer M72 are the electrode in the contact panel, for example be sensing electrode or read electrode that production method, thickness and the material of the first conductive layer M70 and the second conductive layer M72 both or one of them can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.The first conductive layer M70 can comprise a plurality of first patterned electrodes of arranging with first direction serial connection, the second conductive layer M72 can comprise a plurality of second patterned electrodes of arranging with second direction serial connection, and first direction and second direction are inequality, to constitute the sensing electrode of contact panel 7.
Please refer to Fig. 8, it illustrates according to the made first conductive layer M1 of one embodiment of the invention and the second conductive layer M2 both or one of them and is applied in schematic diagram in the electric resistance touch-control panel.As shown in Figure 8, contact panel 8 comprises composite conducting structure 80, gap control unit layer 810 and composite conducting structure 82.Composite conducting structure 80 comprises substrate 800 and the first conductive layer M80, composite conducting structure 82 comprises the second conductive layer M82 and substrate 820, the first conductive layer M80 and the second conductive layer M82 are the electrode in the contact panel, for example be sensing electrode or read electrode, the first conductive layer M80 and the second conductive layer M82 are the conductive layer of patterning not, or first conductive layer M80 can comprise a plurality of first patterned electrodes of arranging with first direction serial connection, the second conductive layer M82 can comprise a plurality of second patterned electrodes of arranging with second direction serial connection, and first direction and second direction are inequality, and the production method of the first conductive layer M80 and the second conductive layer M82 both or one of them, thickness and material can be identical with the second conductive layer M2 of the first conductive layer M1 of first embodiment or second embodiment.
In sum, the above embodiment of the present invention constitutes the composite conducting structure by crystalline state conducting film and the noncrystalline attitude conducting film of crystalline state, the resistance of composite conducting structure is low or equal compared to the crystalline state conductive layer of single layer structure, and the resistance (resistance varying-ratio) of the resistance of composite conducting structure after deflection before divided by deflection is lower than the resistance varying-ratio of the crystalline state conductive layer of single layer structure.Therefore, composite conducting structure of the above embodiment of the present invention and preparation method thereof can be improved and easily causes the problem that opens circuit after the conductive layer deflection.And the made display unit of conductive layer of using the above embodiment of the present invention can be avoided after the deflection line broken circuit or drive resistance becoming big problem, makes the durability of display unit and sensitivity all be expected to promote.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking the claim scope person of defining.
Claims (20)
1. a composite conducting structure is characterized in that, comprising:
One first substrate;
One first conductive layer is arranged on described first substrate, and described first conductive layer comprises a crystalline state conducting film and a noncrystalline attitude conducting film.
2. composite conducting structure as claimed in claim 1 is characterized in that, more comprises a barrier layer, is arranged between described first substrate and described first conductive layer.
3. composite conducting structure as claimed in claim 1 is characterized in that, described first substrate is a flexible base plate.
4. composite conducting structure as claimed in claim 1 is characterized in that, described crystalline state conducting film is between described first substrate and described noncrystalline attitude conducting film.
5. composite conducting structure as claimed in claim 1 is characterized in that, described noncrystalline attitude conducting film is between described first substrate and described crystalline state conducting film.
6. composite conducting structure as claimed in claim 1 is characterized in that, described crystalline state conducting film is the crystalline state of one first metal oxide, and described noncrystalline attitude conducting film is the noncrystalline attitude of one second metal oxide.
7. composite conducting structure as claimed in claim 6, it is characterized in that, described first metal oxide is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide, and described second metal oxide is indium tin oxide, indium-zinc oxide, indium tin zinc oxide or indium gallium zinc oxide.
8. composite conducting structure as claimed in claim 7 is characterized in that, described first metal oxide and described second metal oxide are same material.
9. a contact panel is characterized in that, it comprises composite conducting structure as claimed in claim 1.
10. contact panel as claimed in claim 9 is characterized in that, described first conductive layer as one first sensing electrode, read electrode and a bucking electrode one of them.
11. contact panel as claimed in claim 10 is characterized in that, described first conductive layer is as one first sensing electrode, and described first sensing electrode has a plurality of first patterned electrodes, and more described first patterned electrodes is arranged with first direction serial connection.
12. contact panel as claimed in claim 11 is characterized in that, more comprises one second sensing electrode, it has a plurality of second patterned electrodes, and described second patterned electrodes is arranged with second direction serial connection, and described first direction is different with described second direction.
13. contact panel as claimed in claim 12 is characterized in that, described second sensing electrode comprises a crystalline state conducting film and a noncrystalline attitude conducting film.
14. contact panel as claimed in claim 12 is characterized in that, more comprises one second substrate, wherein said second sensing electrode is arranged on described second substrate.
15. a display floater is characterized in that, comprising:
Composite conducting structure as claimed in claim 1;
One the 3rd substrate; And
One display dielectric layer is arranged between described composite conducting structure and described the 3rd substrate,
Wherein said first conductive layer is as an electrode.
16. display floater as claimed in claim 15 is characterized in that, described electrode be a pixel electrode, community electrode, one scan line and a data wire one of them.
17. the manufacture method of a composite conducting structure is characterized in that, comprising:
Form one first substrate;
Form the initial conduction film of a noncrystalline attitude on described first substrate; And
Make described initial conduction film upper surface carry out crystallization, and form a crystalline state conducting film and a noncrystalline attitude conducting film.
18. method as claimed in claim 17 is characterized in that, described crystalline state conducting film is the crystalline state of one first metal oxide, and described noncrystalline attitude conducting film is the noncrystalline attitude of one second metal oxide.
19. the manufacture method of a composite conducting structure is characterized in that, comprising:
Form one first substrate;
Form the initial conduction film of a noncrystalline attitude on described first substrate;
Make described initial conduction film carry out crystallization, and form a crystalline state conducting film; And
Form a noncrystalline attitude conducting film on described crystalline state conducting film.
20. method as claimed in claim 19 is characterized in that, described crystalline state conducting film is the crystalline state of one first metal oxide, and described noncrystalline attitude conducting film is the noncrystalline attitude of one second metal oxide.
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| CN104951166B (en) * | 2015-07-10 | 2018-08-28 | 张家港康得新光电材料有限公司 | Transparent conductive film and the capacitive touch screen comprising it |
| CN113990555A (en) * | 2021-11-09 | 2022-01-28 | 惠州市天誉科技有限公司 | ITO conductive film for touch sensor, preparation method of ITO conductive film and application of ITO conductive film to touch screen |
| CN113990555B (en) * | 2021-11-09 | 2024-01-26 | 惠州市天誉科技有限公司 | ITO conductive film for touch sensor, preparation method thereof and touch screen application |
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Application publication date: 20130911 |