CN104951165B - Transparent conductive film and the capacitive touch screen comprising it - Google Patents
Transparent conductive film and the capacitive touch screen comprising it Download PDFInfo
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Abstract
The present invention provides a kind of transparent conductive film and include its capacitive touch screen.The transparent conductive film includes the affine layer of fingerprint, transparent substrate layer and ITO layer.Wherein, transparent substrate layer is set on the surface of the affine layer of fingerprint, ITO layer includes the first noncrystalline ITO layer, crystalline ITO layer and the second noncrystalline ITO layer, first noncrystalline ITO layer is arranged on the surface of the affine layer of separate fingerprint of transparent substrate layer, crystalline ITO layer is arranged on the surface of the separate transparent substrate layer of the first noncrystalline ITO layer, and the second noncrystalline ITO layer is arranged on the surface far from the first noncrystalline ITO layer of crystalline ITO layer.The adherence of the transparent conductive film is preferable, and anti-pollution skid-resistant ability is preferable, and impedance is relatively low, and three-dimensional line unobvious, cost is relatively low, and preparation process is simple.
Description
Technical field
The present invention relates to touch screen fields, in particular to a kind of transparent conductive film and include its capacitance touch
Screen.
Background technology
Adherence refers to the adhesive force of adjacent two layers, and then adherence is good greatly for adhesive force, in capacitive touch screen each layer it
Between preferable adherence ensure that the normal work of capacitive touch screen, ensure that capacitive touch screen is with good performance,
Adherence is bad, then the performance of capacitive touch screen is affected, and ITO layer is caused to peel off, conductive bad, or even cannot normal work
Make, therefore, the adherence quality between each layer directly affect the performance shadow of capacitive touch screen, especially ITO layer with and
Adherence between its adjacent two layers influences bigger to the performance of capacitive touch screen.
ITO layer in capacitive touch screen in the prior art is typically crystalline ITO layer, crystalline ITO layer with and its under
The adherence of optical adjustment layer is poor, needs to do specially treated and just can guarantee preferable adherence, meanwhile, crystalline ITO layer with set
Adherence between silver or copper conductive layer placed on it is also poor, also to do specially treated ensure silver or copper conductive layer with
The adherence of crystalline ITO layer, and then ensure that capacitive touch screen is with good performance.
In addition, when making transparent conductive film, hardened layer is easy to be contaminated, in order to solve the problems, such as this, in the prior art
When making transparent conductive film, resistance to protective film is often pasted to protect hardened layer, increases make transparent conductive film in this way
Cost, and complicated process, reduce the production efficiency of transparent conductive film.
Therefore, there is an urgent need for one kind not needing specially treated adherence with regard to relatively good, and can just make without pasting protective film
The scratch-resistant transparent conductive film of hardened layer anti-pollution and capacitive touch screen.
Invention content
It is existing to solve the main purpose of the present invention is to provide a kind of transparent conductive film and comprising its capacitive touch screen
There is in technology the problem of transparent conductive film adherence difference and anti-pollution skid-resistant energy force difference.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of transparent conductive film, the electrically conducting transparent
Film includes the affine layer of fingerprint, transparent substrate layer and ITO layer.Wherein, above-mentioned transparent substrate layer is set to the affine layer of above-mentioned fingerprint
On surface, above-mentioned ITO layer includes the first noncrystalline ITO layer, crystalline ITO layer and the second noncrystalline ITO layer, the first noncrystalline ITO
Layer is arranged on the surface far from the affine layer of above-mentioned fingerprint of above-mentioned transparent substrate layer, and crystalline ITO layer setting is non-above-mentioned first
On the surface far from above-mentioned transparent substrate layer of crystalline ITO layer, the second noncrystalline ITO layer is arranged in the remote of above-mentioned crystalline ITO layer
On surface from the above-mentioned first noncrystalline ITO layer.
Further, in the above-mentioned first noncrystalline ITO layer and/or the second noncrystalline ITO layer the weight content of Sn be 7%~
30%；The weight content of Sn is 1%~7% in above-mentioned crystalline ITO layer.
Further, the thickness of the above-mentioned first noncrystalline ITO layer is between 1~15nm, preferably between 5~10nm；On
The thickness of crystalline ITO layer is stated between 5~25nm, preferably between 10~20nm；The thickness of above-mentioned second noncrystalline ITO layer exists
Between 1~10nm, preferably between 1~5nm.
Further, the affine layer of above-mentioned fingerprint is acrylate resin layer；The pencil hardness of the above-mentioned affine layer of fingerprint 4B~
Between 9H, preferably between 2B~5H.
Further, above-mentioned transparent conductive film further includes hardened layer, the setting of above-mentioned hardened layer above-mentioned transparent substrate layer with
Between above-mentioned first noncrystalline ITO layer, the thickness of above-mentioned hardened layer is between 0.3~50 μm, preferably between 0.5~5 μm.
Further, the thickness of the affine layer of above-mentioned fingerprint is 0.1~5 μm bigger than the thickness of above-mentioned hardened layer, preferably above-mentioned finger
The thickness of line is affine layer is 0.3~1.5 μm bigger than the thickness of above-mentioned hardened layer.
Further, above-mentioned transparent conductive film further includes the first optical adjustment layer and the second optical adjustment layer, the first optics
Adjustment layer is arranged between above-mentioned transparent substrate layer and above-mentioned first amorphism ITO layer；Second optical adjustment layer is arranged upper
It states between the first optical adjustment layer and above-mentioned first noncrystalline ITO layer.
Further, between the refractive index 1.55~3.00 of above-mentioned first optical adjustment layer, preferably 1.60~2.80 it
Between；The thickness of above-mentioned first optical adjustment layer is between 5nm~10 μm, preferably between 10nm~5 μm.
Further, the refractive index of above-mentioned second optical adjustment layer is between 1.10~1.55, preferably 1.20~1.50
Between；The thickness of above-mentioned second optical adjustment layer is between 5~500nm, preferably between 10~300nm.
Further, above-mentioned first optical adjustment layer is in titanium dioxide layer, zirconium oxide layer and niobium pentaoxide layer
One kind, preferably above-mentioned second optical adjustment layer are selected from magnesium fluoride layer, fluorination calcium layer, ice crystal rock layers, organic fluoride nitride layer and dioxy
One kind in SiClx layer.
Further, the thickness of above-mentioned transparent substrate layer is between 10~500 μm, preferably between 20~200 μm；It is above-mentioned
The shrinking percentage in the mechanical movement direction of transparent substrate layer is more than 0 and is less than or equal to 0.5, and the shrinking percentage perpendicular to mechanical movement direction is big
It is less than or equal to 0.1 in 0；The full light transmission rate of above-mentioned transparent substrate layer is more than 85%.
According to another aspect of the present invention, a kind of capacitive touch screen is provided, which includes above-mentioned
Bright conductive film.
It applies the technical scheme of the present invention, the ITO layer in transparent conductive film is using the first noncrystalline ITO layer, crystalline ITO layer
Single layer of crystalline ITO layer in the prior art is replaced with the three-decker of the composition of the second noncrystalline ITO layer, it is increased noncrystalline
ITO layer will not be become crystalline state after the heat treatment process in later stage from non-crystalline, and be to maintain non-crystalline, and shrinking percentage is protected
It holds constant so that etching and the deformation of the front and back noncrystalline ITO layer of heating are smaller, and the stress difference between each layer greatly reduces, and one
Aspect alleviates the serious problem of the three-dimensional line of transparent conductive film, and the capacitive touch screen for obtaining low three-dimensional line is led with transparent
Conductive film；On the other hand, silver or copper conduction printing layer of the noncrystalline ITO layer with transparent substrate layer and in subsequent technique have well
Adherence ensure that transparent conductive film is with good performance, improve the continuity of technique productions.Meanwhile noncrystalline ITO layer
Impedance it is relatively low, so that it is met the needs of touch panel device in the prior art is enlarged, extend it in enlarged touch-control product
Application in market；In addition, the manufacture craft of the transparent conductive film is simpler, the production finished product of transparent conductive film is reduced.
Also, the affine layer of fingerprint in the transparent conductive film can antipollution, avoid in production process every technique to it
Pollution simplify the preparation work of transparent conductive film into the affine layer of fingerprint is protected without subsequently pasting resistance to protective film again
Skill further reduced production cost.
Description of the drawings
The accompanying drawings which form a part of this application are used to provide further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation are not constituted improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 shows the cross-section structure for the transparent conductive film that a kind of exemplary embodiment of the application according to the present invention provides
Schematic diagram；And
Fig. 2 shows the cross-sectional views for the transparent conductive film that a kind of preferred embodiment of the application provides.
Specific implementation mode
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In a kind of typical embodiment of the application, a kind of transparent conductive film is provided, as shown in Figure 1, this transparent is led
Electrolemma includes the affine layer 10 of fingerprint, transparent substrate layer 20 and ITO layer 60.Wherein, above-mentioned transparent substrate layer 20 is set to above-mentioned finger
On the surface of line is affine layer 10, above-mentioned ITO layer 60 includes that the first noncrystalline ITO layer 61, crystalline ITO layer 62 and second are noncrystalline
ITO layer 63, the first noncrystalline ITO layer 61 are arranged on surface of the above-mentioned transparent substrate layer 20 far from the affine layer of above-mentioned fingerprint 10
On, crystalline ITO layer 62 is arranged on the surface far from above-mentioned transparent substrate layer 20 of the above-mentioned first noncrystalline ITO layer 61, and second
Noncrystalline ITO layer 63 is arranged on the surface far from the above-mentioned first noncrystalline ITO layer 61 of above-mentioned crystalline ITO layer 62.
It refers to a kind of ITO that can become crystalline state from non-crystalline during heat treatment to crystallize ITO；The non-knot of the present invention
Brilliant ITO refers to a kind of ITO that will not become crystalline state from non-crystalline after heat treatment process.Fingerprint is affine layer 10 refers to not by
The structure sheaf that fingerprint stains.
ITO layer 60 in above-mentioned transparent conductive film is non-using the first noncrystalline ITO layer 61, crystalline ITO layer 62 and second
The three-decker of the composition of crystalline ITO layer 63 replaces single layer of crystalline ITO layer in the prior art, increased first noncrystalline ITO
Layer 61 and the second noncrystalline ITO layer 63 will not be become crystalline state after the heat treatment process in later stage from non-crystalline, and are to maintain
Non-crystalline, shrinking percentage remain unchanged so that the deformation of ITO layer 60 is smaller before and after etching and heating, the stress difference between each layer
It is different to greatly reduce, on the one hand, to alleviate the serious problem of the three-dimensional line of transparent conductive film, obtain the capacitive touch of low three-dimensional line
Touch screen transparent conductive film；On the other hand, noncrystalline ITO layer (including the first noncrystalline ITO layer 61 and the second noncrystalline ITO
63) silver with transparent substrate layer 20 and in subsequent technique or copper conduction printing layer have good adherence to layer, ensure that transparent lead
Electrolemma is with good performance, improves the continuity of technique productions.Meanwhile the first noncrystalline ITO layer 61 and second noncrystalline
The impedance of ITO layer 63 is relatively low, it is made to meet the needs of touch panel device is enlarged in the prior art, extends it and is touched in enlargement
Control the application in product market；In addition, the manufacture craft of the transparent conductive film is simpler, being produced into for transparent conductive film is reduced
Product.
Fingerprint in above-mentioned transparent conductive film is affine layer 10 can antipollution, avoid every technique in production process to its
Pollution simplifies the preparation work of transparent conductive film into the affine layer 10 of fingerprint is protected without subsequently pasting resistance to protective film again
Skill further reduced production cost.
Therefore, above-mentioned transparent conductive film is good with low three-dimensional line effect, adherence is good, impedance is low, simple production process
With it is at low cost the advantages that.
In order to make transparent conductive film have lower three-dimensional line, better adhesion force and smaller impedance, the application preferred
The weight content of Sn is 7%~30% in 61 and/or second noncrystalline ITO layer 63 of above-mentioned first noncrystalline ITO layer, the first non-knot
The weight content of one layer of Sn in brilliant ITO layer 61 and the second noncrystalline ITO layer 63 is 7%~30% either Sn of the two
Weight content is 7%~30% simultaneously.When the first noncrystalline ITO layer 61 and the weight of the Sn in the second noncrystalline ITO layer 63 contain
When amount is more than 7%, it can be further ensured that ITO is not crystallized, to make transparent conductive film reach preferably low three-dimensional line effect, close
Put forth effort effect；When the weight content of the Sn in the first noncrystalline ITO layer 61 and the second noncrystalline ITO layer 63 is less than 30%, two
The impedance of person is smaller, meanwhile, light transmittance is higher, improves the optical characteristics of transparent conductive film.In order to further ensure transparent
The low three-dimensional line effect and optical characteristics, the application the further preferred first noncrystalline ITO layer 61 and/or second of conductive film are non-
The weight content of Sn is 8%~20% in crystalline ITO layer 63, and more preferable first noncrystalline ITO layer 61 and/or second is noncrystalline
The weight content of Sn is 15% in ITO layer 63.
In order to further ensure the durability of ITO layer 60, the weight of Sn in the further preferably above-mentioned crystalline ITO layer 62 of the application
It is 1%~7% to measure content.
In another preferred embodiment of the application, the thickness of above-mentioned first noncrystalline ITO layer 61 is between 1~15nm.
When the thickness of first noncrystalline ITO layer 61 is more than 1nm, the impedance of the first noncrystalline ITO layer 61 is smaller, can preferably meet
Requirement of the bright conductive film to impedance；When the thickness of the first noncrystalline ITO layer 61 is less than 15nm, it can equally make transparent conductive film
Impedance is smaller, and can be further ensured that transparent conductive film has preferable appearance.In order to further obtain impedance it is relatively low and
The preferable transparent conductive film of appearance, the thickness of the application further preferably above-mentioned first noncrystalline ITO layer 61 is in 5~10nm.
In order to further ensure transparent conductive film has good durability, while ensureing that its impedance is relatively low, low three-dimensional line
Effect is preferable, adhesion force is preferable, and the thickness of the application preferably above-mentioned crystalline ITO layer 62 works as crystalline ITO layer between 5~25nm
When 62 thickness is more than 5nm, the durability of transparent conductive film can be further increased；When the thickness of crystalline ITO layer 62 is less than 25nm
When, can be further ensured that transparent conductive film has a preferable appearance, the thickness of further preferred crystalline ITO layer 62 10~
Between 20nm.
In another preferred embodiment of the application, the thickness of the second noncrystalline ITO layer 63 is between 1~10nm, and
When the thickness of two noncrystalline ITO layers 63 is more than 1nm, the impedance of the second noncrystalline ITO layer 63 is smaller, can preferably meet transparent
Requirement of the conductive film to impedance；When the thickness of the second noncrystalline ITO layer 63 is less than 10nm, it can equally make the resistance of transparent conductive film
It is anti-smaller, it can further ensure that transparent conductive film has preferable appearance.In order to further obtain, impedance is relatively low and appearance
Preferable transparent conductive film, the thickness of the preferably second noncrystalline ITO layer 63 is between 1~5nm.
In order to enable the affine layer 10 of fingerprint has better anti-pollution, the preferably above-mentioned fingerprint of the application is affine, and layer 10 is
Acrylate resin layer；In addition, in order to further ensure the affine layer of fingerprint 10 can play protection to other layers in transparent conductive film
Effect, while ensureing that its production cost is relatively low, the pencil hardness of the preferably above-mentioned fingerprint of the application is affine layer 10 between 4B~9H,
It is preferred that between 2B~5H.
In another preferred embodiment of the application, as shown in Fig. 2, above-mentioned transparent conductive film further includes hardened layer 30,
Above-mentioned hardened layer 30 is arranged between above-mentioned transparent substrate layer 20 and above-mentioned first noncrystalline ITO layer 61, above-mentioned hardened layer 30
Thickness is between 0.3~50 μm, and when the thickness of this layer is more than 0.3 μm, it is other can preferably to play protection transparent conductive film
The effect of layer；And when its thickness it is extra small in 50 μm when, production cost is relatively low.In order to further ensure the second hardened layer 30 can rise
To good protective effect, meanwhile, it is further ensured that its production cost is relatively low, the thickness of the application preferably the second hardened layer 30 exists
Between 0.5~5 μm.
In another preferred embodiment of the application, the thickness of above-mentioned fingerprint is affine layer 10 is thicker than above-mentioned hardened layer 30
Spend 0.1~5 μm big, the thickness of preferably above-mentioned fingerprint is affine layer 10 is 0.3~1.5 μm bigger than the thickness of above-mentioned hardened layer 30.It utilizes
Fingerprint is affine layer 10 is alleviated than the stress of the upper and lower surface of the thickness partial equilibrium transparent substrate layer 20 greatly out of hardened layer 30
Hardened layer 30, the stress variation brought when ITO layer 60 is formed and subsequent heating process handles, prevents transparent conductive film warpage, changes
The effect of kind solid line.
It (including can in order to preferably reduce the optical characteristics difference generated between etched portions and non-etched portions after etching
Depending on the difference of transmission and reflection characteristic in optical range), and then the transparent conductive film of lower three-dimensional line is obtained, further improve saturating
The three-dimensional line phenomenon of bright conductive film, as shown in Fig. 2, the preferably above-mentioned transparent conductive film of the application further includes the first optical adjustment layer 40
With the second optical adjustment layer 50, above-mentioned first optical adjustment layer 40 is arranged noncrystalline in above-mentioned transparent substrate layer 20 and above-mentioned first
Property ITO layer 61 between, the setting of above-mentioned second optical adjustment layer 50 is noncrystalline in above-mentioned first optical adjustment layer 40 and above-mentioned first
Between property ITO layer 61.When the refractive index of transparent substrate layer 20 is more than 1.55, the second optical adjustment layer 50 can be not provided with.
In another preferred embodiment of the application, the refractive index of above-mentioned first optical adjustment layer 40 1.55~3 it
Between, by controlling the refractive index of the first optical adjustment layer 40 in 1.55~3, the quarter in ITO layer 60 can be further reduced
Optical characteristics between erosion part and non-etched portions (penetrates and reflects) difference.In order to further decrease in transparent conductive film
Three-dimensional line, the refractive index of further preferred first optical adjustment layer 40 is between 1.60~2.80, more preferably 1.76~2.80
Between.
In order to further reduce the etched portions in ITO layer 60 and the aberration between non-etched portions so that transparent to lead
Electrolemma obtains preferably low three-dimensional line effect, the thickness of the application preferably above-mentioned first optical adjustment layer 40 5nm~10 μm it
Between, preferably between 10nm~5 μm.
In another preferred embodiment of the application, the refractive index of above-mentioned second optical adjustment layer 50 is 1.10~1.55
Between, the high refractive index of the low-refraction of such second optical adjustment layer 50 and the first optical adjustment layer 40 cooperates so that
The aberration between etched portions and non-etched portions in ITO layer 60 greatly reduces.Low three-dimensional line effect is better in order to obtain
The refractive index of transparent conductive film, further preferred second optical adjustment layer of the application 50 more preferably exists between 1.20~1.50
Between 1.34~1.45.
In order to further reduce optical characteristics difference, the thickness of the application preferably above-mentioned second optical adjustment layer 50 is 5
Between~500nm, preferably the thickness of above-mentioned second optical adjustment layer 50 is between 10~300nm.
Another of the application has in the embodiment of choosing, and above-mentioned first optical adjustment layer 40 is selected from titanium dioxide layer, oxidation
Zirconium layer can preferably adjust transparent conductive film not with one kind in niobium pentaoxide layer, such first optical adjustment layer 40
With the aberration between structure sheaf, and then obtain the better transparent conductive film of low three-dimensional line effect.In order to preferably adjust different knots
Aberration between structure layer, further preferred above-mentioned second optical adjustment layer 50 are selected from magnesium fluoride layer, fluorination calcium layer, ice crystal rock layers,
Organic fluoride nitride layer (such as DIC companies of Japan OP-4002, OP-4003 and OP-4004；Daikin Industries UV1000, UV1100 with
UV2100；Northeast chemical company KD4000 etc.) with silicon dioxide layer in one kind.
In another preferred embodiment of the application, the full light transmission rate of above-mentioned transparent substrate layer 20 is more than 85%, thoroughly
It crosses rate and is less than 85%, final products transmitance can be caused relatively low, customer requirement is not achieved.Transparent substrate layer 20 in the application is
The thin layer of transparent plastic that Zhi Ge manufacturers are produced, generally includes pet layer, TAC layer, PC layers, PE layers or PP layers, but not only
Only it is confined to these transparent substrate layers 20.
In order to further ensure that the technique realizability of transparent substrate layer 20, while in view of the winding of transparent substrate layer 20
Performance, between 10~500 μm, the thickness control of transparent substrate layer 20 exists the thickness of the application preferably above-mentioned transparent substrate layer 20
Within the scope of this, the difficulty for further ensuring preparation process is relatively low, and cost is relatively low, and the winding of transparent substrate layer 20 is relatively held
Easily.After further contemplating existing production status and production cost, the thickness of further preferred above-mentioned transparent substrate layer 20 exists
Between 20~200 μm.
In another preferred embodiment of the application, the mechanical movement direction (Machine of above-mentioned transparent substrate layer 20
Direction, MD, also referred to as mechanical stretching direction) shrinking percentage be more than 0 be less than or equal to 0.5%, perpendicular to mechanical movement direction
The shrinking percentage of (Transverse Direction, TD, also referred to as perpendicular to mechanical stretching direction) is more than 0 and is less than or equal to 0.1%.When
The shrinking percentage in the mechanical movement direction of transparent substrate layer 20 is controlled with the shrinking percentage perpendicular to mechanical movement direction in above range
Interior, percent thermal shrinkage is relatively low, can further improve the three-dimensional line of transparent conductive film.In order to make the low three-dimensional line of transparent conductive film
Effect is more preferable, can also make resistance to heat treatment to transparent substrate layer 20.
In production, if an above-mentioned hardened layer 30 occur coiled strip it is viscous glutinous when, hardened layer 30 can be done at surface roughening
Reason.It is nanoscale such as to use multiple island areas protrusion, island area height of projection；Or add particle, particle diameter in hardening coating fluid
In the micron-scale, surface roughness Ra that treated between 0.3nm~10 μm, further preferred Ra 0.6nm~2.0 μm it
Between.
In another preferred embodiment of the application, a kind of capacitive touch screen is provided, the capacitive touch screen packet
Containing transparent conductive film, which is above-mentioned transparent conductive film.
Transparent conductive film in the capacitive touch screen has low three-dimensional line, disclosure satisfy that the requirement of client, simultaneously because
The impedance of transparent conductive film in the capacitive touch screen is relatively low so that capacitive touch screen may be implemented it is in large size, in turn
Meets the needs of touch panel device is enlarged in the prior art；In addition, the production work of the transparent conductive film of the capacitive touch screen
Skill is simpler so that the production cost of capacitive touch screen is relatively low.
In order to allow those skilled in the art more to have a clear understanding of the technical solution of the application, below with reference to embodiment with it is right
Ratio illustrates.
Embodiment 1
The acrylic resins of painting layer on the surface of transparent substrate layer 20, through drying, the affine layer of fingerprint 10 is made in solidification.
Using magnetron sputtering, ITO layer 60 is formed on the affine surface of separate fingerprint of transparent substrate layer 20, as shown in Figure 1,
The ITO layer 60 includes the first amorphism ITO layer 61, crystalline ITO layer 62 and the second amorphism ITO layer 63.
Using ink wire mark etching method to the first amorphism ITO layer 61 of transparent conductive film, crystalline ITO layer 62 and second
Amorphism ITO layer 63 performs etching, and then, is toasted to it, and baking temperature is 150 DEG C, time 60min.It is transparent to lead
The concrete structure parameter of electrolemma is shown in Table 1.
Embodiment 2
The hardening bath of model FZ001 of the coating selected from Huang Chuan chemical companies of Japan on the surface of transparent substrate layer 20,
Through drying, the affine layer of fingerprint 10 is made in solidification.Then profit is in the same way, close far from above-mentioned fingerprint in transparent substrate layer 20
With the hardening bath of model PC13-1082 of the surface coating selected from DIC companies of Japan of layer 10, hardened layer 30 is made.
Using magnetron sputtering technique, the plated film on the surface far from above-mentioned transparent substrate layer 20 of hardened layer 30, successively
It is noncrystalline to the first optical adjustment layer 40, the second optical adjustment layer, the first amorphism ITO layer 61, crystalline ITO layer 62 and second
Property ITO layer 63, forms structure shown in Fig. 2.
The ITO layer 60 of transparent conductive film is performed etching using ink wire mark etching method, then, it is toasted, is dried
Roasting temperature is 150 DEG C, time 60min.The concrete structure parameter of transparent conductive film is shown in Table 1.
Embodiment 3
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 4
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 5
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 6
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath of coating hardened layer 30 are the model PC13-1082 of Japan DIC companies, transparent conductive film it is specific
Structural parameters are shown in Table 1.
Embodiment 7
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 8
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1；The hardening bath for being coated with the affine layer of fingerprint 10 is the hardening of the model FZ001 of Huang Chuan chemical companies of Japan
Liquid；The hardening bath for being coated with hardened layer 30 is the hardening bath of the model PC13-1082 of DIC companies of Japan, the tool of transparent conductive film
Body structural parameters are shown in Table 1.
Embodiment 9
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein transparent substrate layer 20 is that toray company model is U483PET layers；It is coated with the affine layer of fingerprint 10
Hardening bath be Huang Chuan chemical companies of Japan model FZ001 hardening bath, be coated with the hardening bath of hardened layer 30 as Japan DIC
The concrete structure parameter of the hardening bath of the model PC13-1082 of company, transparent conductive film is shown in Table 1.
Embodiment 10
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1；The hardening bath for being coated with the affine layer of fingerprint 10 is the hardening of the model FZ001 of Huang Chuan chemical companies of Japan
Liquid, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, the tool of transparent conductive film
Body structural parameters are shown in Table 1.
Embodiment 11
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 12
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 13
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 14
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 15
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 16
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Embodiment 17
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the hard of the model PC13-1082 of DIC companies of Japan
Change liquid, the hardening bath for being coated with hardened layer 30 is the hardening bath of the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter is shown in Table 1.
Embodiment 18
Transparent conductive film shown in Fig. 2 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the affine layer of coating fingerprint 10 is the model FZ001 of Huang Chuan chemical companies of Japan
Hardening bath, the hardening bath that the hardening bath of coating hardened layer 30 is the model PC13-1082 of DIC companies of Japan, transparent conductive film
Concrete structure parameter be shown in Table 1.
Comparative example 1
On the surface for the pet layer that toray company model is U48, the model PC13- of DIC companies of coating Japan
The affine layer of fingerprint is made through dry solidification in 1082 hardening bath.Then, profit in the same way, in the remote of this PET base material layer
It is coated with the hardening bath of the model PC13-1082 of DIC companies of Japan on surface from the affine layer of above-mentioned fingerprint, hardened layer is made.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of hardened layer sequentially forms the first light
Learn adjustment layer, the second optical adjustment layer and ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1,
Comparative example 2
On the surface for the pet layer that toray company model is U483, the model PC13- of DIC companies of coating Japan
The affine layer of fingerprint is made through dry solidification in 1082 hardening bath.Then, profit in the same way, in the remote of this PET base material layer
It is coated with the hardening bath of the model PC13-1082 of DIC companies of Japan on surface from the affine layer of above-mentioned fingerprint, hardened layer is made.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of hardened layer sequentially forms film first
Optical adjustment layer, the second optical adjustment layer crystalline ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1.
Comparative example 3
In Di Ren E.I.Du Pont Company model LEL86W, thickness is 125 μm, pet layer surface on, be coated with the waste river of Japan
It learns the hardening bath that company model is FZ001 and the affine layer of fingerprint is made through dry solidification.Then, profit in the same way, herein
The hardening of the model PC13-1082 of DIC companies of coating Japan on the surface far from the affine layer of above-mentioned fingerprint of PET base material layer
Hardened layer is made in liquid.
Using magnetron sputtering technique, the plated film on the surface of the separate transparent substrate layer of hardened layer sequentially forms film first
Optical adjustment layer, the second optical adjustment layer and ITO layer.
The crystalline ITO layer of above-mentioned transparent conductive film is performed etching using ink wire mark etching method, is then toasted,
Baking temperature is 150 DEG C, time 60min.The structural parameters for the transparent conductive film being prepared are shown in Table 1.
Comparative example 4
The hardening bath of model FZ001 of the coating selected from Huang Chuan chemical companies of Japan, warp on the surface of transparent substrate layer
Dry, hardened layer is made in solidification.
Using magnetron sputtering technique, the plated film on the surface far from above-mentioned transparent substrate layer of hardened layer obtains light successively
Learn adjustment layer, the first amorphism ITO layer, crystalline ITO layer and the second amorphism ITO layer.
The ITO layer of transparent conductive film is performed etching using ink wire mark etching method, then, it is toasted, is toasted
Temperature is 150 DEG C, time 60min.
Table 1
First, by the transparent conductive film of all embodiments and comparative example 50 μm of OCA glue-lines of LG chemical companies and greatly
Orangutan strengthened glass fits together, and the second noncrystalline ITO layer is contacted with gorilla strengthened glass, visually carries out transparent conductive film
The effect of the judgement of three-dimensional line, three-dimensional line gradually improves according to the sequence of A, B, C, D, E；Secondly, it is hindered using four probe method
It is anti-to be tested,；Again, using magnetron sputtering technique on the surface of each embodiment and the second noncrystalline ITO layer of comparative example
The layers of copper that thickness is 50nm is plated, using cross-cut tester test method to ITO layer in the transparent conductive film of these embodiments and comparative example
It is tested with the adherence of optical adjustment layer and layers of copper, the fine or not degree of adherence is indicated with nF, n is bigger, and adherence is better；
Finally, it is tested using contact（I.e. people removes the affine layer of fingerprint of contact transparent conductive film, by microscope or visually observes fingerprint parent
Whether there is or not contaminated with layer surface）The affine layer of method test fingerprint antifouling property, specific test result is shown in Table 2.
Table 2
According to table 2：When the weight content of Sn in the first noncrystalline ITO layer and/or the second noncrystalline ITO layer is 7%
~30%, preferably between 8%~20%, the thickness of the more preferably 15%, first noncrystalline ITO layer is between 1~15nm, and
The thickness of two noncrystalline ITO layers is between 1~10nm；The weight content of Sn is 1%~7% in crystalline ITO layer, and thickness is 5
Between~25nm；The refractive index of first optical adjustment layer is between 1.55~3.00, and thickness is between 5nm~10 μm；Second light
The refractive index of adjustment layer is learned between 1.10~1.55, thickness is between 5~500nm；The thickness of hardened layer 0.3~50 μm it
Between；The thickness of fingerprint is affine layer is 0.1~5 μm bigger than the thickness of hardened layer, and the pencil hardness of fingerprint is affine layer is between 4B~9H；
The full light transmission rate of transparent substrate layer is more than 85%, and for thickness between 10~500 μm, the shrinking percentage in mechanical movement direction is big
It is less than or equal to 0.5% in 0, the shrinking percentage perpendicular to mechanical movement direction is when being less than or equal to 0.1% more than 0, transparent conductive film
Impedance it is smaller, adherence is preferable, and low solid line effect is also preferable, and its manufacturing process only needs 3 techniques, technique letter
Single, production cost is relatively low.
It can be seen from the above description that the above embodiments of the present invention realize following technique effect：
ITO layer in the transparent conductive film of the application is noncrystalline using the first noncrystalline ITO layer, crystalline ITO layer and second
The three-decker of the composition of ITO layer replaces single layer of crystalline ITO layer in the prior art, and increased noncrystalline ITO layer is in the later stage
After heat treatment process, crystalline state will not be become from non-crystalline, and be to maintain non-crystalline, shrinking percentage remains unchanged so that erosion
It carves and the deformation of the front and back noncrystalline ITO layer of heating is smaller, the stress difference between each layer greatly reduces, on the one hand, alleviates
The serious problem of the three-dimensional line of bright conductive film obtains the capacitive touch screen transparent conductive film of low three-dimensional line；Another party
Face, silver or copper conduction printing layer of the noncrystalline ITO layer with transparent substrate layer and in subsequent technique have good adherence, ensure that
Transparent conductive film is with good performance, improves the continuity of technique productions.Meanwhile the impedance of noncrystalline ITO layer is relatively low, makes
It meets the needs of touch panel device is enlarged in the prior art, extends its application in enlarged touch-control product market；
In addition, the manufacture craft of the transparent conductive film is simpler, the production finished product of transparent conductive film is reduced.
Also, the affine layer of fingerprint in transparent conductive film can antipollution, avoid in production process every technique to its
Pollution simplifies the preparation process of transparent conductive film into the affine layer of fingerprint is protected without subsequently pasting resistance to protective film again,
It further reduced production cost.
Transparent conductive film in the capacitive touch screen of the application has low three-dimensional line, disclosure satisfy that the requirement of client, together
When due to the impedance of the transparent conductive film in the capacitive touch screen it is relatively low so that large scale may be implemented in capacitive touch screen
Change, and then meets the needs of touch panel device is enlarged in the prior art；In addition, the transparent conductive film of the capacitive touch screen
Production technology is simpler so that the production cost of capacitive touch screen is relatively low.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (24)
1. a kind of transparent conductive film, which is characterized in that the transparent conductive film includes：
Fingerprint is affine layer (10)；
Transparent substrate layer (20) is set on the surface of the affine layer of the fingerprint (10)；
ITO layer (60) is set on the surface far from the affine layer of the fingerprint (10) of the transparent substrate layer (20), described
ITO layer (60) includes：
The table far from the affine layer of the fingerprint (10) in the transparent substrate layer (20) is arranged in first noncrystalline ITO layer (61)
On face；
Crystalline ITO layer (62) is arranged on the surface far from the transparent substrate layer (20) of the described first noncrystalline ITO layer (61)
On；And
Second noncrystalline ITO layer (63) is arranged in the crystalline ITO layer (62) far from the described first noncrystalline ITO layer (61)
Surface on, in the heat treatment process in later stage, the first noncrystalline ITO layer (61) and the second noncrystalline ITO layer
(63) non-crystalline, shrinking percentage is kept to remain unchanged.
2. transparent conductive film according to claim 1, which is characterized in that the first noncrystalline ITO layer (61) and/or
The weight content of Sn is 7%~30% in two noncrystalline ITO layers (63)；The weight content of Sn is in the crystalline ITO layer (62)
1%~7%.
3. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the first noncrystalline ITO layer (61)
Degree is between 1~15nm；The thickness of the crystalline ITO layer (62) is between 5~25nm；The second noncrystalline ITO layer (63)
Thickness between 1~10nm.
4. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the first noncrystalline ITO layer (61)
Degree is between 5~10nm.
5. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the crystalline ITO layer (62) is 10
Between~20nm.
6. transparent conductive film according to claim 1 or 2, which is characterized in that the thickness of the second noncrystalline ITO layer (63)
Degree is between 1~5nm.
7. transparent conductive film according to claim 1, which is characterized in that the affine layer of fingerprint (10) is acrylic resin
Layer；The pencil hardness of the affine layer of fingerprint (10) is between 4B~9H.
8. transparent conductive film according to claim 1, which is characterized in that the pencil hardness of the affine layer of fingerprint (10) exists
Between 2B~5H.
9. transparent conductive film according to claim 1, which is characterized in that the transparent conductive film further includes hardened layer
(30), the hardened layer (30) is arranged between the transparent substrate layer (20) and the first noncrystalline ITO layer (61), described
The thickness of hardened layer (30) is between 0.3~50 μm.
10. transparent conductive film according to claim 9, which is characterized in that the thickness of the hardened layer (30) is in 0.5~5 μ
Between m.
11. transparent conductive film according to claim 9, which is characterized in that the thickness of the affine layer of fingerprint (10) compares institute
The thickness for stating hardened layer (30) is 0.1~5 μm big.
12. transparent conductive film according to claim 9, which is characterized in that the thickness of the affine layer of fingerprint (10) compares institute
The thickness for stating hardened layer (30) is 0.3~1.5 μm big.
13. the transparent conductive film according to claim 1 or 9, which is characterized in that the transparent conductive film further includes：
First optical adjustment layer (40), setting the transparent substrate layer (20) and the first amorphism ITO layer (61) it
Between；And
Second optical adjustment layer (50) is arranged in first optical adjustment layer (40) and the described first noncrystalline ITO layer (61)
Between.
14. transparent conductive film according to claim 13, which is characterized in that the refraction of first optical adjustment layer (40)
Rate is between 1.55~3.00；The thickness of first optical adjustment layer (40) is between 5nm~10 μm.
15. transparent conductive film according to claim 13, which is characterized in that the refraction of first optical adjustment layer (40)
Rate is between 1.60~2.80.
16. transparent conductive film according to claim 13, which is characterized in that the thickness of first optical adjustment layer (40)
Between 10nm~5 μm.
17. transparent conductive film according to claim 13, which is characterized in that the refraction of second optical adjustment layer (50)
Rate is between 1.10~1.55；The thickness of second optical adjustment layer (50) is between 5~500nm.
18. transparent conductive film according to claim 13, which is characterized in that the refraction of second optical adjustment layer (50)
Rate is between 1.20~1.50.
19. transparent conductive film according to claim 13, which is characterized in that the thickness of second optical adjustment layer (50)
Between 10~300nm.
20. transparent conductive film according to claim 13, which is characterized in that first optical adjustment layer (40) is selected from two
One kind in titanium oxide layer, zirconium oxide layer and niobium pentaoxide layer.
21. transparent conductive film according to claim 13, which is characterized in that second optical adjustment layer (50) is selected from fluorine
Change magnesium layer, fluorination calcium layer, ice crystal rock layers, organic fluoride nitride layer and one kind in silicon dioxide layer.
22. transparent conductive film according to claim 1, which is characterized in that the thickness of the transparent substrate layer (20) is 10
Between~500 μm；The shrinking percentage in the mechanical movement direction of the transparent substrate layer (20) is more than 0 and is less than or equal to 0.5, perpendicular to institute
The shrinking percentage for stating mechanical movement direction is being less than or equal to 0.1 more than 0；The full light transmission rate of the transparent substrate layer (20) is more than
85%.
23. transparent conductive film according to claim 1, which is characterized in that the thickness of the transparent substrate layer (20) is 20
Between~200 μm.
24. a kind of capacitive touch screen, including transparent conductive film, which is characterized in that the transparent conductive film is claim 1
To the transparent conductive film described in any one of 23.
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