CN104951169B - Transparent conductive film and the capacitive touch screen comprising it - Google Patents
Transparent conductive film and the capacitive touch screen comprising it Download PDFInfo
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- CN104951169B CN104951169B CN201510404993.3A CN201510404993A CN104951169B CN 104951169 B CN104951169 B CN 104951169B CN 201510404993 A CN201510404993 A CN 201510404993A CN 104951169 B CN104951169 B CN 104951169B
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Abstract
The present invention provides a kind of transparent conductive film and include its capacitive touch screen.The transparent conductive film includes: the first hardened layer, transparent substrate layer, the second hardened layer and noncrystalline ITO layer.Wherein, transparent substrate layer is set on the surface of the first hardened layer, and the shrinking percentage in the mechanical movement direction of transparent substrate layer is greater than 0 and is less than or equal to 0.5%, is greater than 0 less than or equal to 0.1% perpendicular to the shrinking percentage in mechanical movement direction；Second hardened layer is set on the surface far from the first hardened layer of transparent substrate layer；Noncrystalline ITO layer is set on the surface of separate transparent substrate layer of the second hardened layer.The transparent conductive film has the characteristics that low three-dimensional line, Low ESR, low cost, preparation process are simple.
Description
Technical field
The present invention relates to touch screen fields, in particular to a kind of transparent conductive film and include its capacitance touch
Screen.
Background technique
Existing capacitive touch screen transparent conductive film is after etching and heat treatment, it may appear that three-dimensional line, Wu Faman
Foot divides the demand of high-end customer
Three-dimensional line producing cause is primarily due to: (1) etching part of ITO layer (indium tin oxide layer) and non-etched part produce
Optical characteristics difference (including the transmission and reflection characteristic in visual optical range, referred to as color difference) is given birth to, to generate three-dimensional line
Road；(2) in the heat treatment process in later period, inter-laminar stress non-matching phenomenon is applied because the difference of the percent thermal shrinkage of each layer will appear,
This is because the composition diversity ratio between ITO layer and transparent substrate layer and hardened layer is larger, existing stress is larger between each other,
Especially non-crystalline of the ITO layer from before heating becomes the crystalline state after heating, will lead to ITO layer and transparent substrate layer and hardening
Stress between layer increases, in turn result in stress between etching part and transparent substrate layer and hardened layer and non-etched part with
Stress difference between organic layer can further increase, so as to cause the exacerbation of three-dimensional line.
Existing patent and document mainly use the lesser hardened layer of percent thermal shrinkage and transparent substrate layer to form transparent conductive film,
It is further used as the making material of capacitive touch screen, still, after ITO layer etching, transparent conductive film still can generate solid
Line, so that capacitive touch screen is insufficient for the demand of client.
Therefore, a kind of transparent conductive film of low three-dimensional line is needed.
Summary of the invention
It is existing to solve the main purpose of the present invention is to provide a kind of transparent conductive film and comprising its capacitive touch screen
There is the problem that transparent conductive film is more serious with the three-dimensional line of the capacitive touch screen comprising it in technology.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of transparent conductive film, the electrically conducting transparent
Film includes: the first hardened layer, transparent substrate layer, the second hardened layer and noncrystalline ITO layer.Wherein, above-mentioned transparent substrate layer setting
In on the surface of above-mentioned first hardened layer, the shrinking percentage in the mechanical movement direction of above-mentioned transparent substrate layer is greater than 0 and is less than or equal to
0.5%, it is greater than 0 less than or equal to 0.1% perpendicular to the shrinking percentage in above-mentioned mechanical movement direction；Second hardened layer is set to above-mentioned
On the surface far from above-mentioned first hardened layer of bright substrate layer；Noncrystalline ITO layer is set to the separate upper of above-mentioned second hardened layer
It states on the surface of transparent substrate layer.
Further, the weight content of Sn is 7%~30%, preferably 8%~20% in above-mentioned noncrystalline ITO layer, more
Preferably 15%.
Further, the thickness of above-mentioned noncrystalline ITO layer is between 10~100nm, preferably between 15~40nm.
Further, the refractive index of above-mentioned second hardened layer is between 1.59~1.80.
Further, the pencil hardness of above-mentioned second hardened layer is between 3B~4H, preferably between B~3H.
Further, the thickness of above-mentioned second hardened layer is between 0.3~10 μm, preferably between 0.5~3.0 μm.
Further, the pencil hardness of above-mentioned first hardened layer (10) is between 3B~4H, preferably between B~3H.
Further, the thickness of above-mentioned first hardened layer is 0.1~0.5 μm bigger than the thickness of above-mentioned second hardened layer.
Further, the full light transmission rate of above-mentioned transparent substrate layer is greater than 85%, the thickness of preferably above-mentioned transparent substrate layer
Between 10~500 μm, further preferably between 20~200 μm.
According to another aspect of the present invention, a kind of capacitive touch screen is provided, which includes above-mentioned
Transparent conductive film.
It applies the technical scheme of the present invention, transparent conductive film replaces knot in the prior art by using noncrystalline ITO layer
Brilliant ITO layer, after the heat treatment process in later period, noncrystalline ITO layer will not be become crystalline state from non-crystalline, and be to maintain non-knot
Crystalline state, so that the shrinking percentage of noncrystalline ITO layer remains unchanged, so that the stress difference between each layer of etching and heating front and back
It greatly reduces, meanwhile, using the transparent substrate layer compared with low-shrinkage, further reduce between each layer of etching and heating front and back
The serious problem of the three-dimensional line of transparent conductive film has been effectively relieved in stress difference, obtains the capacitive touch screen of low three-dimensional line
Use transparent conductive film；Also, the impedance of noncrystalline ITO layer is lower, it is made to meet touch panel device enlargement in the prior art
Demand, extend its application in enlarged touch-control product market；In addition, the manufacture craft of the transparent conductive film is simpler
It is single, reduce the production finished product of transparent conductive film.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 shows a kind of cross-section structure of exemplary embodiment offer transparent conductive film of the application according to the present invention and shows
It is intended to.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
A kind of typical embodiment of the application provides a kind of transparent conductive film, as shown in Figure 1, the transparent conductive film
It include: the first hardened layer 10, transparent substrate layer 30, the second hardened layer 50 and noncrystalline ITO layer 70.Wherein, above-mentioned transparent substrate
Layer 30 is set on the surface of above-mentioned first hardened layer 10, and the shrinking percentage in the mechanical movement direction of above-mentioned transparent substrate layer 30 is greater than
0 is less than or equal to 0.5%, is greater than 0 less than or equal to 0.1% perpendicular to the shrinking percentage in mechanical movement direction；The setting of second hardened layer 50
In on the surface far from above-mentioned first hardened layer 10 of above-mentioned transparent substrate layer 30；Noncrystalline ITO layer 70 is set to above-mentioned second
On the surface far from above-mentioned transparent substrate layer 30 of hardened layer 50.
Crystallization ITO refers to a kind of ITO that can become crystalline state from non-crystalline during heat treatment；Non- knot of the invention
Brilliant ITO refers to a kind of ITO that will not become crystalline state from non-crystalline after heat treatment process.
Above-mentioned transparent conductive film replaces crystalline ITO layer in the prior art by using noncrystalline ITO layer 70, in the later period
Heat treatment process after, noncrystalline ITO layer 70 will not be become crystalline state from non-crystalline, and be to maintain non-crystalline, so that non-
The shrinking percentage of crystalline ITO layer 70 remains unchanged, so that the stress difference between each layer of etching and heating front and back greatly reduces,
Meanwhile the contraction in the mechanical movement direction (Machine Direction, MD, also referred to as mechanical stretching direction) of transparent substrate layer 30
Rate is greater than 0 and is less than or equal to 0.5%, perpendicular to mechanical movement direction (Transverse Direction, TD, also referred to as perpendicular to machine
Tool draw direction) shrinking percentage be greater than 0 be less than or equal to 0.1%, can be further using the transparent substrate layer 30 compared with low-shrinkage
The stress difference between each layer of etching and heating front and back is reduced, the three-dimensional line that transparent conductive film has been effectively relieved serious is asked
Topic obtains the capacitive touch screen transparent conductive film of low three-dimensional line；Also, the impedance of noncrystalline ITO layer 70 is lower, makes it
Meet the needs of touch panel device is enlarged in the prior art, extends its application in enlarged touch-control product market；Separately
Outside, the manufacture craft of the transparent conductive film is simpler, reduces the production finished product of transparent conductive film.
In order to make transparent conductive film that there is lower three-dimensional line, the weight of Sn in the application preferably above-mentioned noncrystalline ITO layer 70
Measuring content is 7%~30%.When the weight content of the Sn in noncrystalline ITO layer 70 is greater than 7%, it can be further ensured that ITO
It does not crystallize, so that transparent conductive film be made to reach preferably low three-dimensional line effect；When the weight content of the Sn in noncrystalline ITO layer 70
When less than 30%, the impedance of noncrystalline ITO layer 70 is smaller, meanwhile, light transmittance is higher, and the optics for improving transparent conductive film is special
Property.In order to further ensure the low three-dimensional line effect and optical characteristics, the application of transparent conductive film are further preferably noncrystalline
The weight content of Sn is 8%~20% in ITO layer 70, and the weight content of Sn is 15% in more preferable noncrystalline ITO layer 70.
In another preferred embodiment of the application, the thickness of above-mentioned noncrystalline ITO layer 70 between 10~100nm,
When the thickness of noncrystalline ITO layer 70 is greater than 10nm, the impedance of noncrystalline ITO layer 70 is smaller, can preferably meet transparent lead
Requirement of the electrolemma to impedance；When the thickness of noncrystalline ITO layer 70 be less than 100nm when, can equally make the impedance of transparent conductive film compared with
It is small, and the appearance of transparent conductive film is preferable.Impedance is lower and the preferable transparent conductive film of appearance in order to further obtain, the application
The thickness of further preferred above-mentioned noncrystalline ITO layer 70 is in 15~40nm.
In order to reduce the optical characteristics difference generated between etched portions and non-etched portions after etching (including visible light model
The difference of transmission and reflection characteristic in enclosing), further improve the three-dimensional line phenomenon of transparent conductive film, and then obtain lower solid
The transparent conductive film of line, the refractive index of the application preferably above-mentioned second hardened layer 50 is between 1.59~1.80.Second hardened layer
50 refractive index within this range, can achieve the effect that preferably to reduce color difference, and the material of refractive index within this range
It is easy to obtain, in order to further improve the three-dimensional line phenomenon of transparent conductive film, the refractive index of preferably above-mentioned second hardened layer 50
Between 1.59~1.75.
In another preferred embodiment of the application, the pencil hardness of above-mentioned second hardened layer 50 between 3B~4H,
When the hardness of the second hardened layer 50 is greater than 3B, hardness is larger, can better play protective effect；When its hardness is less than 4H
When, its own winding is easier to and cost of manufacture is lower.In order to further ensure the protective value and dimension of the second hardened layer 50
Lower production cost is held, the pencil hardness of further preferred second hardened layer 50 is between B~3H.
In order to further ensure the protective value to transparent conductive film of the second hardened layer 50, while in view of being produced into
This, the preferably thickness of the second hardened layer 50 between 0.3~10 μm, when the thickness of this layer be greater than 0.3 μm when, can play compared with
Other layers of protection transparent conductive film good of effect；And when its thickness is less than 10 μm, production cost can be further decreased.For
It is further ensured that the second hardened layer 50 can play a good protective effect, meanwhile, it is further ensured that its lower production costs, this
Apply the thickness of preferably the second hardened layer 50 between 0.5~3.0 μm.
In another preferred embodiment of the application, the thickness of above-mentioned first hardened layer 10 is than above-mentioned second hardened layer 50
Thickness it is 0.1~0.5 μm big, in order to alleviate the second hardened layer 50, when amorphism ITO layer is formed and subsequent heating process handles
Bring stress variation can balance transparent base using the part that the thickness of 10 to the second hardened layer 50 of the first hardened layer comes out greatly
The stress of the upper and lower surface of material layer 30 can prevent transparent conductive film warpage, further improve the effect of three-dimensional line.
Equally, in order to further ensure the first hardened layer 10 can play a protective role to layers other in transparent conductive film,
Guarantee its lower production costs simultaneously, the pencil hardness of the application preferably above-mentioned first hardened layer 10 is between 3B~4H, preferably
Between B~3H.
In another preferred embodiment of the application, the thickness of the first hardened layer 10 of above-mentioned transparent conductive film is than
The thickness of two hardened layers 50 is 0.5~3 μm big, and coating high temperature dwell cuticula is not had in such plated film and etching process can play height
The effects of high temperature resistant of warm protective film, damage resistant；Meanwhile the transparent conductive film does not need coating high temperature dwell cuticula, simplifies work
Skill process, reduces production cost, can meet the needs of customers.
In another preferred embodiment of the application, the full light transmission rate of above-mentioned transparent substrate layer 30 is greater than 85%, thoroughly
Rate is crossed greater than 85%, can preferably meet the requirement of client.Transparent substrate layer 30 in the application refers to each institute, manufacturer
The thin layer of transparent plastic of production, generally includes pet layer, TAC layer, and PC layers, PE layers or PP layers, but be not only confined to these
Transparent substrate layer 30.
In order to further ensure that the technique realizability of transparent substrate layer 30, while considering the receipts of layer transparent substrate layer 30
Performance is rolled up, the thickness of the preferably above-mentioned transparent substrate layer 30 of the application is between 10~500 μm, the thickness control of transparent substrate layer 30
Within this range, the difficulty for further ensuring preparation process is lower, and cost is relatively low, and the winding of transparent substrate layer 30 is relatively held
Easily.After further contemplating existing production status and production cost, the thickness of further preferred above-mentioned transparent substrate layer 30 exists
Between 20~200 μm.
In another preferred embodiment of the application, in order to keep the low three-dimensional line effect of transparent conductive film more preferable, may be used also
To make resistance to heat treatment with the first hardened layer 10 to transparent substrate layer 30.
In another preferred embodiment of the application, a kind of capacitive touch screen is provided, the capacitive touch screen packet
Containing transparent conductive film, which is above-mentioned transparent conductive film.
Transparent conductive film in the capacitive touch screen has low three-dimensional line, can satisfy the requirement of client, simultaneously because
The impedance of transparent conductive film in the capacitive touch screen is lower so that capacitive touch screen may be implemented it is in large size, in turn
Meets the needs of touch panel device is enlarged in the prior art；In addition, the production work of the transparent conductive film of the capacitive touch screen
Skill is simpler, so that the production cost of capacitive touch screen is relatively low.
In order to allow those skilled in the art more to have a clear understanding of the technical solution of the application, below with reference to embodiment with it is right
Ratio is illustrated.
Embodiment 1
The hardening bath of model FZ001 of the coating selected from Huang Chuan chemical company, Japan on the surface of transparent substrate layer 30,
Through drying, the first hardened layer 10 is made in solidification.Then in the same way, separate above-mentioned first in transparent substrate layer 30 is hard for benefit
The hardening bath for changing model PC13-1082 of the surface coating selected from DIC company, Japan of layer 10, is made the second hardened layer 50.
Using magnetron sputtering technique, the plated film on the surface far from above-mentioned transparent substrate layer 30 of the second hardened layer 50 is obtained
To amorphism ITO layer, transparent conductive film shown in FIG. 1 is formed.
It is performed etching using noncrystalline ITO layer 70 of the ink wire mark etching method to transparent conductive film, then, it is dried
Roasting, baking temperature is 150 DEG C, time 60min.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 2
Transparent conductive film shown in FIG. 1 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical company, Japan
Hardening bath, the hardening bath of the second hardened layer 50 of coating are the hardening bath of the model KZ6661 of JSR company, Japan.Transparent conductive film
Specific structure parameter be shown in Table 1.
Embodiment 3
Transparent conductive film shown in FIG. 1 is prepared using method same as Example 1, the transparent conductive film being prepared
Structural parameters are shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the model FZ001 of Huang Chuan chemical company, Japan
Hardening bath, the hardening bath of the second hardened layer 50 of coating are the hardening bath of the model KZ6661 of JSR company, Japan, form Fig. 1 institute
The transparent conductive film shown.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 4
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 5
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 6
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 7
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 8
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein transparent substrate layer 30 is the pet layer of Di Ren E.I.Du Pont Company model KEL86W；It is coated with the hard of the first hardened layer 10
Change the hardening bath for the model FZ001 that liquid is Huang Chuan chemical company, Japan；The hardening bath for being coated with the second hardened layer 50 is Japan JSR
The hardening bath of the model KZ6661 of company, forms transparent conductive film shown in FIG. 1.The specific structure parameter of transparent conductive film is shown in
Table 1.
Embodiment 9
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein transparent substrate layer 30 is the pet layer of Di Ren E.I.Du Pont Company model KEL86W；It is coated with the hard of the first hardened layer 10
Change the hardening bath for the model FZ001 that liquid is Huang Chuan chemical company, Japan, the hardening bath of the second hardened layer 50 of coating is Japan JSR
The hardening bath of the model KZ6661 of company, forms transparent conductive film shown in FIG. 1.The specific structure parameter of transparent conductive film is shown in
Table 1.
Embodiment 10
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer of cloth 10 is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, coating
The hardening bath of second hardened layer 50 is the hardening bath of the model KZ6661 of JSR company, Japan, forms electrically conducting transparent shown in FIG. 1
Film.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 11
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 12
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model FZ001 of Huang Chuan chemical company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 13
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model PC13-1082 of DIC company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Embodiment 14
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein the hardening bath of the first hardened layer 10 of coating is the hardening bath of the model PC13-1082 of DIC company, Japan, is applied
The hardening bath of the second hardened layer of cloth 50 is the hardening bath of the model KZ6661 of JSR company, Japan, and formation is shown in FIG. 1 transparent to be led
Electrolemma.The specific structure parameter of transparent conductive film is shown in Table 1.
Comparative example 1
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein transparent substrate layer is selected from the pet layer that toray company model is U483, is coated with the hardening bath of the first hardened layer
For the hardening bath of the model PC13-1082 of Japanese DIC company, the hardening bath for being coated with the second hardened layer is DIC company, Japan
The specific structure parameter of the hardening bath of model PC13-1082, transparent conductive film is shown in Table 1.
Comparative example 2
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein transparent substrate layer is selected from the pet layer of the model KEL86W of Di Ren E.I.Du Pont Company, is coated with the hard of the first hardened layer
Change the hardening bath for the model PC13-1082 that liquid is DIC company, Japan, the hardening bath of the second hardened layer of coating is the waste river of Japan
The specific structure parameter of the hardening bath of the model FZ001 of company, transparent conductive film is shown in Table 1.
Comparative example 3
Transparent conductive film, the structural parameters for the transparent conductive film being prepared are prepared using method same as Example 1
It is shown in Table 1, wherein transparent substrate layer is selected from the pet layer that toray company model is U483, is coated with the hardening bath of the first hardened layer
For the hardening bath of the model FZ001 of Japanese Huang Chuan chemical company, the hardening bath for being coated with the second hardened layer is JSR company, Japan
The specific structure parameter of the hardening bath of model KZ6661, transparent conductive film is shown in Table 1.
Table 1
The transparent conductive film of all embodiments and comparative example is strong with 50 μm of OCA glue-line of LG chemical company and gorilla
Change glass gluing together, noncrystalline ITO layer is contacted with gorilla strengthened glass, visually carries out sentencing for transparent conductive film solid line
It is disconnected, its impedance is tested using four probe method.Specific test result is shown in Table 2, wherein the effect of three-dimensional line is according to A, B, C
Sequence gradually improve.
Table 2
According to table 2: when Sn in noncrystalline ITO layer weight content be 7%~30%, preferably 8%~20% it
Between, more preferably 15%, thickness is between 10~100nm；The refractive index of second hardened layer is between 1.59~1.80, lead
Hardness is between 3B~4H, and thickness is between 0.3~10 μm；The thickness of first hardened layer is bigger than the thickness of the second hardened layer
0.1~0.5 μm, the pencil hardness of the first hardened layer is between 3B~4H；The full light transmission rate of transparent substrate layer is greater than 85%,
Thickness is between 10~500 μm, and the shrinking percentage in mechanical movement direction is greater than 0 and is less than or equal to 0.5%, perpendicular to mechanical movement side
To shrinking percentage be greater than 0 and be less than or equal to 0.1% when, the impedance of transparent conductive film is smaller, and low solid line effect is also preferable, and
Its manufacturing process only needs 3 techniques, simple process, lower production costs.
It can be seen from the above description that the above embodiments of the present invention realized the following chievements:
Above-mentioned transparent conductive film replaces crystalline ITO layer in the prior art by using noncrystalline ITO layer, noncrystalline
ITO layer will not be become crystalline state after the heat treatment process in later period from non-crystalline, and be to maintain non-crystalline, so that
The shrinking percentage of noncrystalline ITO layer remains unchanged, so that the stress difference between each layer of etching and heating front and back greatly reduces,
Meanwhile using the transparent substrate layer compared with low-shrinkage, the stress difference between each layer of etching and heating front and back is further reduced,
The serious problem of the three-dimensional line of transparent conductive film has been effectively relieved, has obtained the capacitive touch screen electrically conducting transparent of low three-dimensional line
Film；Also, the impedance of noncrystalline ITO layer is lower, it is made to meet the needs of touch panel device is enlarged in the prior art, extension
Its application in enlarged touch-control product market；In addition, the manufacture craft of the transparent conductive film is simpler, reduce transparent
The production finished product of conductive film.
Transparent conductive film in the capacitive touch screen has low three-dimensional line, can satisfy the requirement of client, simultaneously because
The impedance of transparent conductive film in the capacitive touch screen is lower so that capacitive touch screen may be implemented it is in large size, in turn
Meets the needs of touch panel device is enlarged in the prior art；In addition, the production work of the transparent conductive film of the capacitive touch screen
Skill is simpler, so that the production cost of capacitive touch screen is relatively low.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (18)
1. a kind of transparent conductive film, which is characterized in that the transparent conductive film includes:
First hardened layer (10)；
Transparent substrate layer (30) is arranged on the surface of first hardened layer (10), the machinery of the transparent substrate layer (30)
The shrinking percentage of traffic direction is greater than 0 and is less than or equal to 0.5%, is less than or equal to perpendicular to the shrinking percentage in the mechanical movement direction greater than 0
0.1%；
Second hardened layer (50) is arranged on the surface far from first hardened layer (10) of the transparent substrate layer (30)；
And
Noncrystalline ITO layer (70) is arranged on the surface far from the transparent substrate layer (30) of second hardened layer (50),
Wherein, noncrystalline ITO layer (70) will not be become crystalline state after the heat treatment process in later period from non-crystalline, and be to maintain non-
Crystalline state, so that the shrinking percentage of noncrystalline ITO layer remains unchanged.
2. transparent conductive film according to claim 1, which is characterized in that the weight of Sn in the noncrystalline ITO layer (70)
Content is 7%~30%.
3. transparent conductive film according to claim 1, which is characterized in that the weight of Sn in the noncrystalline ITO layer (70)
Content is 8%~20%.
4. transparent conductive film according to claim 1, which is characterized in that the weight of Sn in the noncrystalline ITO layer (70)
Content is 15%.
5. transparent conductive film according to any one of claim 1 to 4, which is characterized in that the noncrystalline ITO layer (70)
Thickness between 10~100nm.
6. transparent conductive film according to any one of claim 1 to 4, which is characterized in that the noncrystalline ITO layer (70)
Thickness between 15~40nm.
7. transparent conductive film according to claim 5, which is characterized in that the refractive index of second hardened layer (50) exists
Between 1.59 ~ 1.80.
8. transparent conductive film according to claim 1 or claim 7, which is characterized in that the pencil of second hardened layer (50) is hard
Degree is between 3B ~ 4H.
9. transparent conductive film according to claim 1 or claim 7, which is characterized in that the pencil of second hardened layer (50) is hard
Degree is between B ~ 3H.
10. transparent conductive film according to claim 8, which is characterized in that the thickness of second hardened layer (50) is 0.3
Between ~ 10 μm.
11. transparent conductive film according to claim 8, which is characterized in that the thickness of second hardened layer (50) is 0.5
Between ~ 3.0 μm.
12. according to claim 1, transparent conductive film described in 10 or 11, which is characterized in that the lead of first hardened layer (10)
Hardness is between 3B ~ 4H.
13. according to claim 1, transparent conductive film described in 10 or 11, which is characterized in that the lead of first hardened layer (10)
Hardness is between B ~ 3H.
14. transparent conductive film according to claim 12, which is characterized in that the thickness of first hardened layer (10) compares institute
The thickness for stating the second hardened layer (50) is 0.1~0.5 μm big.
15. according to claim 1 or transparent conductive film described in 14, which is characterized in that the full light of the transparent substrate layer (30)
Transmitance is greater than 85%.
16. according to claim 1 or transparent conductive film described in 14, which is characterized in that the thickness of the transparent substrate layer (30)
Between 10 ~ 500 μm.
17. according to claim 1 or transparent conductive film described in 14, which is characterized in that the thickness of the transparent substrate layer (30)
Between 20 ~ 200 μm.
18. a kind of capacitive touch screen, including transparent conductive film, which is characterized in that the transparent conductive film be claim 1 to
Transparent conductive film described in any one of 17.
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| CN201510404993.3A CN104951169B (en) | 2015-07-10 | 2015-07-10 | Transparent conductive film and the capacitive touch screen comprising it |
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| CN104951169B true CN104951169B (en) | 2019-03-15 |
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| CN112992408A (en) * | 2021-01-28 | 2021-06-18 | 中国乐凯集团有限公司 | Flexible composite transparent conductive film and preparation method and device thereof |
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|---|---|---|---|---|
| CN102051587A (en) * | 2009-10-30 | 2011-05-11 | 三星康宁精密素材株式会社 | Indium tin oxide sputtering target and transparent conductive film fabricated using the same |
| CN103756383A (en) * | 2013-12-17 | 2014-04-30 | 张家港康得新光电材料有限公司 | Anti-adhesion coating composition used for hard coating and corresponding double-sided hard coating |
| CN104040644A (en) * | 2012-01-06 | 2014-09-10 | 捷恩智株式会社 | Transparent electroconductive film |
| TW201510145A (en) * | 2013-06-28 | 2015-03-16 | Nitto Denko Corp | Pressure-sensitive adhesive composition, pressure-sensitive adhesive layer for transparent conductive layer, laminate, and image display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5408075B2 (en) * | 2009-10-06 | 2014-02-05 | 日油株式会社 | Transparent conductive film |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051587A (en) * | 2009-10-30 | 2011-05-11 | 三星康宁精密素材株式会社 | Indium tin oxide sputtering target and transparent conductive film fabricated using the same |
| CN104040644A (en) * | 2012-01-06 | 2014-09-10 | 捷恩智株式会社 | Transparent electroconductive film |
| TW201510145A (en) * | 2013-06-28 | 2015-03-16 | Nitto Denko Corp | Pressure-sensitive adhesive composition, pressure-sensitive adhesive layer for transparent conductive layer, laminate, and image display device |
| CN103756383A (en) * | 2013-12-17 | 2014-04-30 | 张家港康得新光电材料有限公司 | Anti-adhesion coating composition used for hard coating and corresponding double-sided hard coating |
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