CN103309487B - The preparation method of ITO electrode - Google Patents
The preparation method of ITO electrode Download PDFInfo
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- CN103309487B CN103309487B CN201210067323.3A CN201210067323A CN103309487B CN 103309487 B CN103309487 B CN 103309487B CN 201210067323 A CN201210067323 A CN 201210067323A CN 103309487 B CN103309487 B CN 103309487B
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- ito
- base material
- conductive layer
- ito electrode
- high temperature
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 42
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000012780 transparent material Substances 0.000 claims abstract description 10
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 claims description 6
- 238000013036 cure process Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 29
- 238000005452 bending Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The preparation method of a kind of ITO electrode, wherein ITO electrode uses transparent material to make, and transparent material includes base material and the ITO conductive layer being formed on base material, and transparent material need to carry out when making electrode silver slurry baking.Said method was additionally included on the surface that base material is relative with ITO conductive layer formation high temperature dwell cuticula before carrying out the step of silver slurry baking.After increasing high temperature dwell cuticula; the thickness of prepared ITO electrode wants thickness compared to without high temperature dwell cuticula product; and structural strength is high, therefore after silver slurry baking, between etching region and the non-etched district of ITO conductive layer, obvious stress difference flexural deformation will not be produced.Therefore, the ITO electrode using said method to prepare can effectively alleviate the visuality of its surface deformation.
Description
[technical field]
The present invention relates to electronic material technology, particularly relate to the preparation method of a kind of ITO electrode.
[background technology]
Tin-doped indium oxide (i.e. Indium Tin Oxide is called for short ITO), is a kind of n-type semiconductor, by
In having high conductivity, high visible light transmissivity, high mechanical hardness and chemical stability, therefore, it is one
Plant conventional transparent conductive material, apply to various product transparency electrode.In actual utilization, ITO was before this
Use physical vacuum method to be deposited with in certain base material, be prepared as ITO conductive layer, the most as required, will
Film etching becomes predetermined pattern as transparency electrode.
The ITO conductive layer of PET base material, as in the utilization of electrode, is to be etched into predetermined pattern.Due to
The coefficient of expansion of ITO is huge with the expansion coefficient difference of base material, causes ITO conductive layer etching area and ITO
The stress difference of conductive layer non-etched areas is notable, through the most complete silver slurry baking thermal history (heat up---
Constant temperature---cooling) after, produce obvious stress difference Bending Deformation in ITO non-etched areas, similar have temperature
The deformation of degree memory function bimetallic paster.After fitting into capacitive touch screen, stress difference Bending Deformation is still
So remain in ito film surface will not disappear.Just it appeared that the deformation of this ITO under general light and visual angle,
This phenomenon can not be touched product by the display of high-quality and accept.
[summary of the invention]
In view of above-mentioned condition, it is necessary to provide a kind of and can effectively alleviate the ITO that ITO electrode surface deformation is visual
The preparation method of electrode.
The preparation method of a kind of ITO electrode, described ITO electrode uses transparent material to make, described transparent material
Material includes base material and is formed at the ITO conductive layer on described base material, carries out silver slurry baking at described transparent material
Before, including:
The surface that described base material is relative with described ITO conductive layer is formed high temperature dwell cuticula.
Further, also include:
Form ITO conductive layer on the surface of described base material, and described ITO conductive layer is etched into predetermined figure
Case, obtains ITO electrode；
The step of silver paste baking is the etching area printing conductive silver paste at described ITO conductive layer, and dries
Dry.
Further, after stated clearly material carries out silver slurry baking, also include:
Remove described high temperature dwell cuticula, obtain described ITO electrode.
Further, described base material is the ethylene glycol terephthalate of monolayer.
Further, the surface of described base material is carried out anti-dazzle and/or cure process.
Further, the material of described high temperature dwell cuticula is ethylene glycol terephthalate.
Further, the thickness of described high temperature dwell cuticula is 0.025～0.25 millimeter.
The preparation method of above-mentioned ITO electrode, was additionally included in base material the most attached before carrying out the step of silver slurry baking
The step forming high temperature dwell cuticula on the surface of ITO conductive layer.After increasing high temperature dwell cuticula, made
The thickness of standby ITO electrode wants thickness compared to without high temperature dwell cuticula product, and structural strength wants height, therefore warp
After crossing silver slurry baking, the bending of obvious stress difference between etching region and the non-etched district of ITO conductive layer, will not be produced
Deformation.Therefore, the ITO electrode using said method to prepare can effectively alleviate the visuality of its surface deformation.
[accompanying drawing explanation]
Fig. 1 is the flow chart of the preparation method of the ITO electrode of embodiment one；
Fig. 2 is the flow chart of the preparation method of the ITO electrode of embodiment two.
[detailed description of the invention]
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.
Accompanying drawing gives presently preferred embodiments of the present invention.But, the present invention can come real in many different forms
Existing, however it is not limited to embodiment described herein.On the contrary, providing the purpose of these embodiments is to make this
The understanding of disclosure of the invention content is more thorough comprehensively.
It should be noted that when element is referred to as " being fixed on " another element, and it can be directly at another yuan
On part or element placed in the middle can also be there is.When an element is considered as " connection " another element, and it can
To be directly to another element or to may be simultaneously present centering elements.
Unless otherwise defined, all of technology used herein and scientific terminology and the technology belonging to the present invention
The implication that the technical staff in field is generally understood that is identical.The art used the most in the description of the invention
Language is intended merely to describe the purpose of specific embodiment, it is not intended that in limiting the present invention.Used herein
Term " and/or " include the arbitrary and all of combination of one or more relevant Listed Items.
Referring to Fig. 1, the preparation method of the ITO electrode in embodiment one includes step S110～S130.
Step S110, forms ITO conductive layer, and is etched into by ITO conductive layer predetermined on the surface of base material
Pattern, obtains ITO electrode.
Wherein, base material can be glass or ethylene glycol terephthalate (PET).In the present embodiment, base material
Being preferably PET, wherein PET both can be monolayer, it is possible to for bilayer.The thickness of base material is 0.020～0.250
Millimeter.In the present embodiment, also substrate surface is carried out anti-dazzle and/or cure process, anti-dazzle and cure process
Can be on base material a surface, it is also possible to be on two surfaces.
In the present embodiment, using the mode of evaporation to form ITO conductive layer, evaporation forms ITO conductive layer
Purity is high, be prone to detection and control thickness, and without carrying out heating, drying.In actual production, be by ITO
Conductive layer is made electrode and is needed ITO conductive layer is first etched into predetermined pattern.In the present embodiment, take laser
The mode of dry etching obtains predetermined pattern.In other embodiments, it is also possible to by other means such as chemistry erosion
Carve and obtain predetermined pattern.
Step S120, forms high temperature dwell cuticula on the surface that base material is relative with ITO conductive layer.
In the present embodiment, the material of high temperature dwell cuticula is ethylene glycol terephthalate (PET).Need to refer to
Going out, the material of high temperature dwell cuticula can be also other materials, such as high molecular polymerizations such as Merlon (PC)
Thing material.Additionally, the thickness of high temperature dwell cuticula is 0.025～0.25 millimeter.Owing to high temperature dwell cuticula has one
Fixed thickness and intensity, therefore, the ITO electrode of high temperature dwell cuticula of having fitted and the ITO without high temperature dwell cuticula
Electrode is compared has higher structural strength.
Step S130, the etching area at ITO conductive layer prints conductive silver paste, and dries.
After ITO conductive layer is etched into the pattern of electrode, need in the one layer of conductive silver paste conduct of its surface printing
The lead-in wire of electrode.After printing conductive silver paste, need to dry silver slurry.Owing to adding the ITO of high temperature dwell cuticula
Electrode has higher structural strength, therefore, after drying between the etching region of ito film and non-etched district not
Stress difference Bending Deformation can be produced.
It is pointed out that in other embodiments, first can form high temperature dwell cuticula on surface of base material,
ITO conductive layer is formed the most again on the surface for formation high temperature dwell cuticula of base material.
Referring to Fig. 2, the preparation method of the ITO electrode in embodiment two includes step S210～S240.
Step S210, forms ITO conductive layer, and is etched into by ITO conductive layer predetermined on the surface of base material
Pattern, obtains ITO electrode.
Step S220, forms high temperature dwell cuticula on the surface that base material is relative with ITO conductive layer.
Step S230, the etching area at ITO conductive layer prints conductive silver paste, and dries.
It is pointed out that in other embodiments, first can form high temperature dwell cuticula on surface of base material,
ITO conductive layer is formed the most again on the surface for formation high temperature dwell cuticula of base material.
Step S240, removes high temperature dwell cuticula.
High temperature dwell cuticula role simply prevents stress difference bending during carrying out silver slurry baking
Deformation.Owing to the thickness of high temperature dwell cuticula is relatively big, the thickness of the ITO electrode being fitted with high temperature dwell cuticula is compared
Can be greatly increased in the past.And the trend of current electronic product is to be made more and more frivolous, therefore is fitted with height
The ITO electrode of temperature protecting film is undesirable.Therefore, high temperature dwell cuticula should give removal after silver slurry baking,
High temperature dwell cuticula is not included in obtained finished product ITO electrode.
The preparation method of above-mentioned ITO electrode, was additionally included in base material and ITO before carrying out the step of silver slurry baking
The step of high temperature dwell cuticula is formed on the surface that conductive layer is relative.After increasing high temperature dwell cuticula, prepared
ITO electrode thickness compared to without high temperature dwell cuticula product want thickness, and structural strength want height, therefore pass through
After silver slurry baking, the bending of obvious stress difference will not be produced between etching region and the non-etched district of ITO conductive layer and become
Shape.Therefore, the ITO electrode using said method to prepare can effectively alleviate the visuality of its surface deformation.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed,
But therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, for this area
Those of ordinary skill for, without departing from the inventive concept of the premise, it is also possible to make some deformation and
Improving, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be with appended
Claim is as the criterion.
Claims (5)
1. a preparation method for ITO electrode, described ITO electrode uses transparent material to make, described transparent
Material includes base material and is formed at the ITO conductive layer on described base material, it is characterised in that in described transparent material
Before material carries out silver slurry baking, including:
The surface that described base material is relative with described ITO conductive layer is formed high temperature dwell cuticula；
After described transparent material carries out silver slurry baking, also include:
Removing described high temperature dwell cuticula, the thickness of described high temperature dwell cuticula is 0.025～0.25 millimeter；
The preparation method of described ITO electrode, also includes:
Form ITO conductive layer on the surface of described base material, and described ITO conductive layer is etched into predetermined figure
Case, obtains ITO electrode；
The step of silver paste baking is the etching area printing conductive silver paste at described ITO conductive layer, and dries
Dry.
2. the preparation method of ITO electrode as claimed in claim 1, it is characterised in that to described base material
Surface carries out anti-dazzle and/or cure process.
3. the preparation method of ITO electrode as claimed in claim 1, it is characterised in that described base material is single
The ethylene glycol terephthalate of layer.
4. the preparation method of ITO electrode as claimed in claim 1, it is characterised in that described base material is so-called
Thickness is 0.020～0.250 millimeter.
5. the preparation method of ITO electrode as claimed in claim 1, it is characterised in that described high temperature protection
The material of film is ethylene glycol terephthalate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210067323.3A CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210067323.3A CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
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| Publication Number | Publication Date |
|---|---|
| CN103309487A CN103309487A (en) | 2013-09-18 |
| CN103309487B true CN103309487B (en) | 2016-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210067323.3A Expired - Fee Related CN103309487B (en) | 2012-03-14 | 2012-03-14 | The preparation method of ITO electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106923822A (en) * | 2017-02-28 | 2017-07-07 | 铂元智能科技(北京)有限公司 | The manufacture method of electrocardioelectrode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739160A (en) * | 2008-11-17 | 2010-06-16 | 深圳市航泰光电有限公司 | Manufacturing method of ITO film for touch screen |
| CN201590912U (en) * | 2009-12-30 | 2010-09-22 | 长城信息产业股份有限公司 | Anti-deformation flexible transparent heating film |
| CN101893954A (en) * | 2010-05-07 | 2010-11-24 | 佛山市顺德区锐新科屏蔽材料有限公司 | Novel manufacturing process of touch screen |
| CN102200654A (en) * | 2011-06-07 | 2011-09-28 | 南京福莱克斯光电科技有限公司 | Integrated touch display device and making method thereof |
| WO2012005271A1 (en) * | 2010-07-09 | 2012-01-12 | Jnc株式会社 | Transparent conductive film and method for producing same |
-
2012
- 2012-03-14 CN CN201210067323.3A patent/CN103309487B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101739160A (en) * | 2008-11-17 | 2010-06-16 | 深圳市航泰光电有限公司 | Manufacturing method of ITO film for touch screen |
| CN201590912U (en) * | 2009-12-30 | 2010-09-22 | 长城信息产业股份有限公司 | Anti-deformation flexible transparent heating film |
| CN101893954A (en) * | 2010-05-07 | 2010-11-24 | 佛山市顺德区锐新科屏蔽材料有限公司 | Novel manufacturing process of touch screen |
| WO2012005271A1 (en) * | 2010-07-09 | 2012-01-12 | Jnc株式会社 | Transparent conductive film and method for producing same |
| CN102200654A (en) * | 2011-06-07 | 2011-09-28 | 南京福莱克斯光电科技有限公司 | Integrated touch display device and making method thereof |
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| Publication number | Publication date |
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| CN103309487A (en) | 2013-09-18 |
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