CN202495011U - Indium tin oxide (ITO) thin-film material - Google Patents
Indium tin oxide (ITO) thin-film material Download PDFInfo
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- CN202495011U CN202495011U CN2012200959043U CN201220095904U CN202495011U CN 202495011 U CN202495011 U CN 202495011U CN 2012200959043 U CN2012200959043 U CN 2012200959043U CN 201220095904 U CN201220095904 U CN 201220095904U CN 202495011 U CN202495011 U CN 202495011U
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Abstract
An indium tin oxide (ITO) thin-film material comprises substrate materials, an ITO electricity conducting layer and a high temperature protection film. The substrate materials comprise a first surface and a second surface which is opposite to the first surface. The ITO electricity conducting layer is attached to one of the first surface and the second surface and forms a preset pattern. The high temperature protection film is attached to one surface of the first surface and the second surface and the surface is not attached by the ITO electricity conducting layer. Due to the fact that the high temperature protection film is added, the ITO thin-film material is thicker than a thin-film material without the high temperature film, moreover the ITO thin-film material is higher than the thin-film material without the high temperature film in structure strength, and therefore obvious stress-difference bending distortion between an etching area and a non-etching area of the ITO electricity conducting layer can not occur after the ITO thin-film material goes through silver pulp baking. Therefore, visuality of surface distortion of ITO electrodes made from the ITO thin-film material can be effectively reduced.
Description
[technical field]
The present invention relates to electronic material technology, particularly relate to a kind of ito thin film material.
[background technology]
Tin-doped indium oxide (be Indium Tin Oxide, be called for short ITO) is a kind of n type, semiconductor material; Owing to have high conductivity, high visible light transmissivity, high mechanical hardness and chemical stability; Therefore, it is a kind of transparent conductive material commonly used, applies to the various product transparency electrode.In the utilization of reality, ITO adopted physical vacuum method vapor deposition in certain base material before this, was prepared into the ITO conductive layer, and then as required, the pattern that film etching one-tenth is predetermined is as transparency electrode.
In the utilization of ITO conductive layer as electrode of PET base material, be to be etched into predetermined pattern.Because the expansion coefficient of ITO and the expansion coefficient difference of base material are huge; Cause the stress difference of ITO conductive layer etching area and the non-etching area of ITO conductive layer remarkable; Behind silver slurry baking thermal history (heating up--constant temperature---cooling) through one whole; Produce the crooked deformation of obvious stress difference, similar deformation at the non-etching area of ITO with temperature memory function thermometal paster.After fitting into capacitive touch screen, the crooked deformation of stress difference still remains in ITO film surface and can not disappear.Under general light and visual angle, just can find the deformation of this ITO, this phenomenon can not be touched product by high-quality demonstration and accept.
[summary of the invention]
In view of above-mentioned condition, be necessary to provide a kind of and can effectively alleviate the visual ito thin film material of ITO electrode surface deformation.
A kind of ito thin film material comprises:
Base material comprises that first surface reaches and said first surface opposing second surface;
The ITO conductive layer is attached in said first surface and the second surface, and forms predetermined pattern; And
The high temperature protection film fits in the one side of not adhering to said ITO conductive layer in said first surface and the second surface.
Further, the surface of said base material is provided with anti-dazzle striped and/or hardened layer.
Further, said base material is the ethylene glycol terephthalate of individual layer.
Further, the material of said high temperature protection film is an ethylene glycol terephthalate.
Further, the thickness of said high temperature protection film is 0.025～0.25 millimeter.
Above-mentioned ito thin film material; On base material, be fitted with the high temperature protection film; Because after increasing the high temperature protection film, the thickness of prepared ito thin film material is thick compared to no high temperature protection film product, and structural strength wants high; Therefore through after the baking of silver slurry, between the etching region of ITO conductive layer and non-etching region, can not produce the flexural deformation of obvious stress difference.Therefore, adopt the ITO electrode of above-mentioned ito thin film material preparation can effectively alleviate the visuality of its surface deformation.
[description of drawings]
Fig. 1 is the structural representation of the ito thin film material of an embodiment.
[embodiment]
For the ease of understanding the present invention, will more comprehensively describe the present invention with reference to relevant drawings below.Provided preferred embodiment of the present invention in the accompanying drawing.But the present invention can realize with many different forms, be not limited to embodiment described herein.On the contrary, provide the purpose of these embodiment be make the understanding of disclosure of the present invention comprehensively thorough more.
Need to prove, when element is called as " being fixed in " another element, it can be directly on another element or also can have element placed in the middle.When an element is considered to " connection " another element, it can be to be directly connected to another element or possibly to have element placed in the middle simultaneously.
Only if definition is arranged in addition, the employed all technology of this paper are identical with the implication that belongs to those skilled in the art's common sense of the present invention with scientific terminology.Among this paper in instructions of the present invention employed term be not intended to be restriction the present invention just in order to describe the purpose of concrete embodiment.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
See also Fig. 1, the ito thin film material 100 of preferred embodiment of the present invention comprises base material 110, ITO conductive layer 120 and high temperature protection film 130.
ITO conductive layer 120 is attached in first surface and the second surface of base material 110.In the present embodiment, adopt the mode of vapor deposition to form ITO conductive layer 120, the purity that vapor deposition forms ITO conductive layer 120 is high, be easy to detect and control thickness, and need not to carry out heating, drying.In actual production, ITO conductive layer 120 is made electrode needs earlier ITO conductive layer 120 to be etched into predetermined pattern.In the present embodiment, the pattern that the mode of taking laser to do quarter obtains being scheduled to.The pattern that in other embodiments, can also obtain being scheduled to through other modes such as chemical etching.
High temperature protection film 130 fits in first surface and the second surface of base material 110 and does not adhere on the one side of ITO conductive layer 120.In the present embodiment, the material of high temperature protection film 130 is ethylene glycol terephthalate (PET).The material that it is pointed out that high temperature protection film 130 also can be other materials, like polycarbonate macromolecule polymer materials such as (PC).In addition, the thickness of high temperature protection film 130 is preferably 0.025～0.25 millimeter.Because high temperature protection film 130 has certain thickness and intensity, therefore, the ITO electrode 100 of the high temperature protection film 130 of having fitted is compared with the ITO electrode of no high temperature protection film 130 has higher structural strength.
Silver-plated slurry on ito thin film material 100, and after toasting, and can obtain the ITO electrode.
Above-mentioned ito thin film material 100 is fitted with high temperature protection film 130 on base material 110.Because after increasing high temperature protection film 130; The thickness of prepared ito thin film material 100 is thick compared to no high temperature protection film product; And it is high that structural strength is wanted, and therefore through after the baking of silver slurry, can not produce the flexural deformation of obvious stress difference between the etching region of ITO conductive layer 120 and the non-etching region.Therefore, the ITO electrode that adopts ito thin film material 100 to prepare can effectively alleviate the visuality of its surface deformation.
The above embodiment has only expressed several kinds of embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.
Claims (5)
1. an ito thin film material is characterized in that, comprising:
Base material comprises that first surface reaches and said first surface opposing second surface;
The ITO conductive layer is attached in said first surface and the second surface, and forms predetermined pattern; And
The high temperature protection film fits in the one side of not adhering to said ITO conductive layer in said first surface and the second surface.
2. ito thin film material as claimed in claim 1 is characterized in that the surface of said base material is provided with anti-dazzle striped and/or hardened layer.
3. ito thin film material as claimed in claim 1 is characterized in that, said base material is the ethylene glycol terephthalate of individual layer.
4. ito thin film material as claimed in claim 1 is characterized in that, the material of said high temperature protection film is an ethylene glycol terephthalate.
5. ito thin film material as claimed in claim 1 is characterized in that, the thickness of said high temperature protection film is 0.025～0.25 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200959043U CN202495011U (en) | 2012-03-14 | 2012-03-14 | Indium tin oxide (ITO) thin-film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200959043U CN202495011U (en) | 2012-03-14 | 2012-03-14 | Indium tin oxide (ITO) thin-film material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202495011U true CN202495011U (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200959043U Expired - Lifetime CN202495011U (en) | 2012-03-14 | 2012-03-14 | Indium tin oxide (ITO) thin-film material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903458A (en) * | 2012-11-05 | 2013-01-30 | 烟台正海科技有限公司 | Method for eliminating etching traces of film electroconductive material |
| CN104133586A (en) * | 2014-06-27 | 2014-11-05 | 卓韦光电股份有限公司 | Plastic conductive plate and manufacture method thereof |
| CN113257684A (en) * | 2021-04-25 | 2021-08-13 | 深圳市时代速信科技有限公司 | Chip packaging method and device |
-
2012
- 2012-03-14 CN CN2012200959043U patent/CN202495011U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903458A (en) * | 2012-11-05 | 2013-01-30 | 烟台正海科技有限公司 | Method for eliminating etching traces of film electroconductive material |
| CN104133586A (en) * | 2014-06-27 | 2014-11-05 | 卓韦光电股份有限公司 | Plastic conductive plate and manufacture method thereof |
| CN113257684A (en) * | 2021-04-25 | 2021-08-13 | 深圳市时代速信科技有限公司 | Chip packaging method and device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121017 |