CN204079779U - Ito conductive glass - Google Patents
Ito conductive glass Download PDFInfo
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- CN204079779U CN204079779U CN201420444170.4U CN201420444170U CN204079779U CN 204079779 U CN204079779 U CN 204079779U CN 201420444170 U CN201420444170 U CN 201420444170U CN 204079779 U CN204079779 U CN 204079779U
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Abstract
The utility model discloses the colourless low-resistance of large size capacitive touch screen in one to disappear shadow ITO conductive glass, comprise the glass, the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and the ITO layer that stack gradually; The material of the first high refractive index layer and the second high refractive index layer is TiO
2, ZrO
2or Si
3n
4; The material of the first low-index layer and the second low-index layer is SiO
2or MgF
2.Substitute traditional shadow layer that disappears by the film layer structure combined with specific refractory power height, this ITO conductive glass (10 ~ 30 ohm) when surface resistance is lower realizes disappearing shadow; This ITO conductive glass also solve tradition disappear shadow glass adopt Nb
2o
5as during high-index material in subsequent processing operations Nb
2o
5with the problem of alkaline reaction; Simultaneously the disappear ITO color of shadow glass of this structure is very shallow, and the shadow that disappears is effective, can meet the application demand of large-sized capacitive touch screen.
Description
Technical field
The utility model relates to a kind of colourless low-resistance for middle large size capacitive touch screen and to disappear the ITO conductive glass of shadow.
Background technology
ITO conductive glass is on the basis of sodium calcium substrate or silicon boryl substrate glass, utilizes the method deposition of silica (SiO successively of magnetron sputtering
2) and tin indium oxide (common name ITO) processing film be made into.
ITO is a kind of metallic compound with good clear conductivity, have that forbidden band is wide, visible range optical transmittance is high and the characteristic such as resistivity is low, ITO conductive glass is widely used in flat-panel display device, solar cell, specific function window coating and other field of photoelectric devices, is the transparency conductive electrode material that the various types of flat panel display devices such as current LCD, PDP, OLED, touch-screen extensively adopt.As the key foundation material of flat-panel display device, its continuous renewal along with flat-panel display device of ITO conductive glass and upgrading and there is the more wide market space.
Traditional shadow glass that disappears being applied to capacitive touch screen generally passes through the shadow rete that disappears of sputter high refractive index, low-refraction double-layer structure between glass and ITO, the difference of the aberration between ITO lines and etched area and transmitance is reduced, reaches the object of the shadow that disappears.This shadow glass resistor that disappears is higher, is comparatively applicable to small-medium size capacitive touch screen.For middle large size capacitance plate, because of touch accuracy requirement, need the ito film layer that resistance is lower, rete is thicker.Now, high refractive index, low-refraction coupling as disappear shadow Rotating fields time, realize the ideal shadow effect that disappears, because ito film layer is too thick, ITO color can be heavier, thus ITO line and etching area cannot to reach in color identical as far as possible, though namely can realize transmitance differs nearer, but the existence of color distortion impact disappears shadow effect, the shadow effect that causes disappearing is still poor.Therefore, large-sized capacitive touch screen often needs the color of lower side resistance low-resistance colourless as far as possible to disappear shadow ITO conductive glass.
Meanwhile, routine disappears high-index material many employings Nb needed for shadow ITO product
2o
5, have alkali lye demoulding in ITO subsequent processing operations, add the operations such as alkali ultrasonic cleaning, and Nb
2o
5dissolve together with alkaline reaction, sticking power, the compactness of ITO will be affected, and there will be severe ito film pull-up and will fall, affect the touch controllable function of product.And according to TiO
2, ZrO
2or Si
3n
4deng material as high-index material, then no matter alkali lye demoulding, still to add alkali ultrasonic, disappearing shadow layer can same alkaline reaction, and sticking power, the compactness of ito film layer are more guaranteed, thus the touch-control merit of the capacitance plate product prepared with the ito glass of this type of material produce is more guaranteed.
Utility model content
Based on this, be necessary to provide a kind of when surface resistance is lower colourless as far as possible the and ITO conductive glass of the shadow object that can realize disappearing of color.
A kind of ITO conductive glass, comprises the glass, the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and the ITO layer that stack gradually;
The material of described first high refractive index layer is TiO
2, ZrO
2or Si
3n
4;
The material of described first low-index layer is SiO
2or MgF
2;
The material of described second high refractive index layer is TiO
2, ZrO
2or Si
3n
4;
The material of described second low-index layer is SiO
2or MgF
2;
The thickness of described first high refractive index layer is
The thickness of described first low-index layer is
The thickness of described second high refractive index layer is
The thickness of described second low-index layer is
In one embodiment, the thickness of described first high refractive index layer is
In one embodiment, the thickness of described first low-index layer is
In one embodiment, the thickness of described second high refractive index layer is
In one embodiment, the thickness of described second low-index layer is
In one embodiment, the thickness of described ITO layer is
In one embodiment, the surface resistance of described ITO conductive glass be 10 ohm ~ 14 ohm, 14 ohm ~ 20 ohm, 17 ~ 25 Europe or 20 ohm ~ 30 ohm.
This ITO conductive glass, by substituting traditional transition rete with the first high refractive index layer, the first low-index layer, the second high refractive index layer and the second low-index layer, the film layer structure that specific refractory power height combines adds the transmitance of ITO layer, can (10 ohm ~ 30 ohm) meet ITO and the second low-refraction when surface resistance is lower and meet in 450nm, 550nm place transmitance the shadow requirement that disappears, and the color of ITO and the shadow layer that disappears is all very light, disappear shadow better effects if, more can meet the application demand of large-sized capacitive touch screen.Meanwhile, TiO is adopted
2, ZrO
2or Si
3n
4deng material substitution Nb
2o
5as high-index material, then no matter add that alkali is ultrasonic, alkali lye demoulding, can same alkaline reaction, sticking power, the compactness of ito film layer are more guaranteed, thus the touch controllable function of the capacitance plate product prepared with ITO is ensured.
Accompanying drawing explanation
Fig. 1 is the structural representation of the ITO conductive glass of an embodiment;
Fig. 2 is the schema of the preparation method of ITO conductive glass as shown in Figure 1.
Embodiment
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in detail embodiment of the present utility model below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the utility model.But the utility model can be much different from alternate manner described here to implement, those skilled in the art can when doing similar improvement without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public concrete enforcement.
An embodiment ITO conductive glass as shown in Figure 1, comprises glass 10, first high refractive index layer 20, first low-index layer 30, second high refractive index layer 40, second low-index layer 50 and ITO layer 60 that stack gradually.
Glass 10 can select the glass of float glass or other this area routines.
The material of the first high refractive index layer 20 is TiO
2, ZrO
2or Si
3n
4.TiO
2specific refractory power be 2.3, ZrO
2specific refractory power be 2.17, Si
3n
4specific refractory power be 2.0.Adopt TiO
2, ZrO
2or Si
3n
4as the material of the first high refractive index layer 20, make the transmitance of the first high refractive index layer 20 relatively low.
The thickness of the first high refractive index layer 20 can be
generally speaking, the thickness of the first low-index layer 20 for the overall transmitance of ITO conductive glass and visual effect impact less, in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is, the first low-index layer 20 can omit.
In one preferably embodiment, the thickness of the first high refractive index layer 20 is
The material of the first low-index layer 30 is SiO
2or MgF
2.SiO
2specific refractory power be 1.48, MgF
2specific refractory power be 1.38.Adopt SiO
2or MgF
2as the material of the first low-index layer 30, make the transmitance of the first low-index layer 30 relatively high.
In present embodiment, the thickness of the first low-index layer 30 is
in a special embodiment, the thickness of the first low-index layer 30 can be 0, and that is, the first low-index layer 30 can omit.
In one preferably embodiment, the thickness of the first low-index layer 30 is
The material of the second high refractive index layer 40 is TiO
2, ZrO
2or Si
3n
4.Nb
2o
5specific refractory power be 2.3, TiO
2specific refractory power be 2.3, ZrO
2specific refractory power be 2.17, Si
3n
4specific refractory power be 2.0.Adopt TiO
2, ZrO
2or Si
3n
4as the material of the second high refractive index layer 40, make the transmitance of the second high refractive index layer 40 relatively low.
In present embodiment, the thickness of the second high refractive index layer 40 is
in a special embodiment, the thickness of the second high refractive index layer 40 can be 0, and that is, the second high refractive index layer 40 can omit.
In one preferably embodiment, the thickness of the second high refractive index layer 40 is
The material of the second low-index layer 50 is SiO
2or MgF
2.SiO
2specific refractory power be 1.48, MgF
2specific refractory power be 1.38.Adopt SiO
2or MgF
2as the material of the second low-index layer 50, make the transmitance of the second low-index layer 50 relatively high.
In present embodiment, the thickness of the second low-index layer 50 is
in a special embodiment, the thickness of the second low-index layer 50 can be 0, and that is, the second low-index layer 50 can omit.
In one preferably embodiment, the thickness of the second low-index layer 50 is
In present embodiment, the thickness of ITO layer 60 is
The surface resistance of ITO conductive glass can be 10 ohm ~ 14 ohm, 14 ohm ~ 20 ohm, 17 ~ 25 Europe or 20 ohm ~ 30 ohm.
Especially, the resistance range of corresponding ITO conductive glass is 20 ohm ~ 30 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 17 ohm ~ 25 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 14 ohm ~ 20 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 10 ohm ~ 14 ohm, and the thickness of ITO layer 60 is
This ITO conductive glass, by substituting traditional transition rete with the first high refractive index layer 20, first low-index layer 30, second high refractive index layer 40 and the second low-index layer 50, the film layer structure that specific refractory power height combines adds the transmitance of ITO layer, (10 ohm ~ 30 ohm) shadow that disappears can be realized when surface resistance is lower, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.Simultaneously the selection of high-index material, can ensure that product withstands operations such as adding alkali is ultrasonic, alkali lye demoulding in following process process, and the compactness of the shadow layer that ensures to disappear and sticking power, ensure the performance of product.
The preparation method of above-mentioned ITO conductive glass as shown in Figure 2, comprises the steps:
S10, provide glass 10, dry after cleaning.
Glass 10 can select the glass of float glass or other this area routines.
S20, by cleaning after glass 10 surface magnetron sputtering deposition first high refractive index layer 20, first low-index layer 30, second high refractive index layer 40, second low-index layer 50 and ITO layer 60 successively, obtain ITO conductive glass.
The material of the first high refractive index layer 20 is TiO
2, ZrO
2or Si
3n
4.TiO
2specific refractory power be 2.3, ZrO
2specific refractory power be 2.17, Si
3n
4specific refractory power be 2.0.Adopt TiO
2, ZrO
2or Si
3n
4as the material of the first high refractive index layer 20, make the transmitance of the first high refractive index layer 20 relatively low.
The thickness of the first high refractive index layer 20 can be
generally speaking, the thickness of the first low-index layer 20 for the overall transmitance of ITO conductive glass and visual effect impact less, in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is, the first low-index layer 20 can omit.
In one preferably embodiment, the thickness of the first high refractive index layer 20 is
The material of the first low-index layer 30 is SiO
2or MgF
2.SiO
2specific refractory power be 1.48, MgF
2specific refractory power be 1.38.Adopt SiO
2or MgF
2as the material of the first low-index layer 30, make the transmitance of the first low-index layer 30 relatively high.
In present embodiment, the thickness of the first low-index layer 30 is
in a special embodiment, the thickness of the first low-index layer 30 can be 0, and that is, the first low-index layer 30 can omit.
In one preferably embodiment, the thickness of the first low-index layer 30 is
The material of the second high refractive index layer 40 is TiO
2, ZrO
2or Si
3n
4.Nb
2o
5specific refractory power be 2.3, TiO
2specific refractory power be 2.3, ZrO
2specific refractory power be 2.17, Si
3n
4specific refractory power be 2.0.Adopt TiO
2, ZrO
2or Si
3n
4as the material of the second high refractive index layer 40, make the transmitance of the second high refractive index layer 40 relatively low.
In present embodiment, the thickness of the second high refractive index layer 40 is
in a special embodiment, the thickness of the second high refractive index layer 40 can be 0, and that is, the second high refractive index layer 40 can omit.
In one preferably embodiment, the thickness of the second high refractive index layer 40 is
The material of the second low-index layer 50 is SiO
2or MgF
2.SiO
2specific refractory power be 1.48, MgF
2specific refractory power be 1.38.Adopt SiO
2or MgF
2as the material of the second low-index layer 50, make the transmitance of the second low-index layer 50 relatively high.
In present embodiment, the thickness of the second low-index layer 50 is
in a special embodiment, the thickness of the second low-index layer 50 can be 0, and that is, the second low-index layer 50 can omit.
In one preferably embodiment, the thickness of the second low-index layer 50 is
In present embodiment, the thickness of ITO layer 60 is
The surface resistance of ITO conductive glass can be 10 ohm ~ 14 ohm, 14 ohm ~ 20 ohm, 17 ~ 25 Europe or 20 ohm ~ 30 ohm.
Especially, the resistance range of corresponding ITO conductive glass is 20 ohm ~ 30 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 17 ohm ~ 25 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 14 ohm ~ 20 ohm, and the thickness of ITO layer 60 is
the resistance range of corresponding ITO conductive glass is 10 ohm ~ 14 ohm, and the thickness of ITO layer 60 is
The ITO conductive glass that aforesaid method is obtained, by substituting traditional transition rete with the first high refractive index layer 20, first low-index layer 30, second high refractive index layer 40 and the second low-index layer 50, the film layer structure that specific refractory power height combines adds the transmitance of ITO layer, (10 ohm ~ 30 ohm) shadow that disappears can be realized when surface resistance is lower, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.
Be specific embodiment below.
Embodiment 1
It is dry after float glass is cleaned.
Be 2 × 10 in operating pressure
-3under the condition of mbar, at Float Glass Surface successively deposit thickness be
tiO
2layer, thickness are
siO
2layer, thickness are
tiO
2layer, thickness are
siO
2layer and thickness are
iTO layer, obtain required ITO conductive glass.
Embodiment 2
It is dry after float glass is cleaned.
Be 3 × 10 in operating pressure
-3under the condition of mbar, at Float Glass Surface successively deposit thickness be
tiO
2layer, thickness are
siO
2layer, thickness are
tiO
2layer, thickness are
siO
2layer and thickness are
iTO layer, obtain required ITO conductive glass.
Embodiment 3
It is dry after float glass is cleaned.
Be 8 × 10 in operating pressure
-4under the condition of mbar, at Float Glass Surface successively deposit thickness be
zrO
2layer, thickness are
siO
2layer, thickness are
zrO
2layer, thickness are
siO
2layer and thickness are
iTO layer, obtain required ITO conductive glass.
Embodiment 4
It is dry after float glass is cleaned.
Be 1 × 10 in operating pressure
-3under the condition of mbar, at Float Glass Surface successively deposit thickness be
tiO
2layer, thickness are
mgF
2layer, thickness are
tiO
2layer, thickness are
siO
2layer and thickness are
iTO layer, obtain required ITO conductive glass.
Embodiment 5
It is dry after float glass is cleaned.
Be 1 × 10 in operating pressure
-3under the condition of mbar, at Float Glass Surface successively deposit thickness be
si
3n
4layer, thickness are
mgF
2layer, thickness are
si
3n
4layer, thickness are
mgF
2layer and thickness are
iTO layer, obtain required ITO conductive glass.
To the ITO conductive glass that embodiment 1 ~ 5 prepares, utilize the SD-6000 chromascope test transmitance of Japanese electric look, result is as shown in table 1 below.
Table 1: the transmission measurement test-results of the ITO conductive glass that embodiment 1 ~ 5 prepares.
As can be seen from Table 1, difference≤2.0% of the ITO conductive glass that embodiment 1 ~ 5 prepares in 450nm place transmitance, difference≤1.0% of 550nm place transmitance, meet low-resistance ITO and to disappear shadow standard.
The ITO conductive glass that embodiment 1 ~ 5 prepares, by the coupling of rete between multilayer height low-index material, (10 ohm ~ 30 ohm) shadow that disappears can be realized when surface resistance is lower, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.
The above embodiment only have expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (7)
1. the colourless low-resistance for middle large size capacitive touch screen disappears the ITO conductive glass of shadow, it is characterized in that, comprise the glass, the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and the ITO layer that stack gradually;
The material of described first high refractive index layer is TiO
2, ZrO
2or Si
3n
4;
The material of described first low-index layer is SiO
2or MgF
2;
The material of described second high refractive index layer is TiO
2, ZrO
2or Si
3n
4;
The material of described second low-index layer is SiO
2or MgF
2;
The thickness of described first high refractive index layer is
The thickness of described first low-index layer is
The thickness of described second high refractive index layer is
The thickness of described second low-index layer is
2. ITO conductive glass according to claim 1, is characterized in that, the thickness of described first high refractive index layer is
3. ITO conductive glass according to claim 1, is characterized in that, the thickness of described first low-index layer is
4. ITO conductive glass according to claim 1, is characterized in that, the thickness of described second high refractive index layer is
5. ITO conductive glass according to claim 1, is characterized in that, the thickness of described second low-index layer is
6. ITO conductive glass according to claim 1, is characterized in that, the thickness of described ITO layer is
7. the ITO conductive glass according to any one of claim 1 ~ 6, is characterized in that, the surface resistance of described ITO conductive glass is 10 ohm ~ 14 ohm, 14 ohm ~ 20 ohm, 17 ~ 25 Europe or 20 ohm ~ 30 ohm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420444170.4U CN204079779U (en) | 2014-08-07 | 2014-08-07 | Ito conductive glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420444170.4U CN204079779U (en) | 2014-08-07 | 2014-08-07 | Ito conductive glass |
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Publication Number | Publication Date |
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CN204079779U true CN204079779U (en) | 2015-01-07 |
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ID=52172516
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105398120A (en) * | 2015-11-13 | 2016-03-16 | 北京航玻新材料技术有限公司 | Disapparate permeability-improvement film, conductive film, conductive glass and touch screen |
CN106587655A (en) * | 2017-01-23 | 2017-04-26 | 蚌埠玻璃工业设计研究院 | Shadow-eliminating and reflection-reducing conductive glass |
-
2014
- 2014-08-07 CN CN201420444170.4U patent/CN204079779U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105398120A (en) * | 2015-11-13 | 2016-03-16 | 北京航玻新材料技术有限公司 | Disapparate permeability-improvement film, conductive film, conductive glass and touch screen |
CN106587655A (en) * | 2017-01-23 | 2017-04-26 | 蚌埠玻璃工业设计研究院 | Shadow-eliminating and reflection-reducing conductive glass |
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