CN104166490A - ITO conducting glass and preparation method thereof - Google Patents

ITO conducting glass and preparation method thereof Download PDF

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Publication number
CN104166490A
CN104166490A CN201410386184.XA CN201410386184A CN104166490A CN 104166490 A CN104166490 A CN 104166490A CN 201410386184 A CN201410386184 A CN 201410386184A CN 104166490 A CN104166490 A CN 104166490A
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China
Prior art keywords
index layer
low
thickness
layer
ito
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刘玉华
方凤军
陈立
谭伟
杜晓峰
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YICHANG NANBO DISPLAY DEVICES Co Ltd
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YICHANG NANBO DISPLAY DEVICES Co Ltd
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Publication of CN104166490A publication Critical patent/CN104166490A/en
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Abstract

The invention discloses a piece of colorless low-resistance ITO conducting glass for medium-and-large-sized capacitive touch screens. The ITO conducting glass comprises a glass body, a first high-refractive-index layer, a first low-refractive-index layer, a second high-refractive-index layer, a second low-refractive-index layer and an ITO layer, wherein the glass body, the first high-refractive-index layer, the first low-refractive-index layer, the second high-refractive-index layer, the second low-refractive-index layer and the ITO layer are stacked in sequence; the first high-refractive-index layer and the second high-refractive-index layer are both made of TiO2 or ZrO2 or Si3N4; the first low-refractive-index layer and the second low-refractive-index layer are both made of SiO2 or MgF2. According to the ITO conducting glass, a film layer structure with the combination of a low refractive index and a high refractive index is adopted to replace a traditional shallow elimination layer, so the ITO conducting glass can achieve shallow elimination when the area resistance is low (ranging from 10 ohms to 30 ohms); the ITO conducting glass also solves the problem that when Nb2O5 is adopted as high-refractive-index materials of traditional shallow elimination glass, the Nb2O5 reacts with alkali liquor in the subsequent processing process; meanwhile, the ITO color of the shallow elimination glass of the structure is light, so the shadow elimination effect is good, and the application requirements for large-sized capacitive touch screens can be met. The invention further discloses a preparation method of the ITO conducting glass.

Description

ITO electro-conductive glass and preparation method thereof
Technical field
The present invention relates to a kind of colourless low-resistance for large size capacitive touch screen ITO electro-conductive glass of shadow and preparation method thereof that disappears.
Background technology
ITO electro-conductive glass is on the basis of sodium calcium substrate or silicon boryl substrate glass, and the method for utilizing magnetron sputtering is deposition of silica (SiO successively 2) and tin indium oxide (common name ITO) processing film be made into.
ITO is a kind of metallic compound with good clear electric conductivity, have that forbidden band is wide, visible range light transmission is high and the characteristic such as resistivity is low, ITO electro-conductive glass is widely used in flat-panel display device, solar cell, specific function window coating and other field of photoelectric devices, is the transparency conductive electrode material that the various types of flat panel display devices such as current LCD, PDP, OLED, touch-screen extensively adopt.As the key foundation material of flat-panel display device, its continuous renewal along with flat-panel display device of ITO electro-conductive glass and upgrading and there is the more wide market space.
Traditional shadow glass that disappears that is applied to capacitive touch screen is generally by the shadow rete that disappears of sputter high index of refraction between glass and ITO, low-refraction double-layer structure, aberration between ITO lines and etched area and the difference of transmitance are reduced, reach the object of the shadow that disappears.This shadow glass resistor that disappears is higher, is applicable to small-medium size capacitive touch screen.For middle large scale electric capacity screen, because of touch-control accuracy requirement, need the ITO rete that resistance is lower, rete is thicker.Now, high index of refraction, low-refraction coupling is when disappearing shadow layer structure, realize the comparatively desirable shadow effect that disappears, because of ITO rete too thick, ITO color can be heavier, thereby ITO line and etching area cannot reach identical as far as possible in color, though can realize in transmitance and differ nearer, the shadow effect but the existence of color distortion impact disappears, the shadow effect that causes disappearing is still poor.Therefore, large-sized capacitive touch screen often needs the colourless as far as possible low-resistance of color of the lower side resistance shadow ITO electro-conductive glass that disappears.
Meanwhile, the routine required high-index material of shadow ITO product that disappears adopts Nb more 2o 5, in ITO following process operation, have alkali lye demoulding, add the operations such as alkali ultrasonic cleaning, and Nb 2o 5together with alkaline reaction, dissolve, the adhesion of ITO, compactness will be affected, and there will be severe ITO rete and come off, and affect the touch controllable function of product.And if employing TiO 2, ZrO 2or Si 3n 4deng material as high-index material, no matter alkali lye demoulding, still to add alkali ultrasonic, disappearing shadow layer can same alkaline reaction, and adhesion, the compactness of ITO rete are more guaranteed, thereby the touch-control merit of the capacitance plate product of preparing with the ito glass of this type of manufacture of materials is more guaranteed.
Summary of the invention
Based on this, be necessary to provide a kind of when surface resistance is lower color colourless as far as possible and can realize the ITO electro-conductive glass of shadow object and preparation method thereof that disappears.
An ITO electro-conductive glass, comprises the glass, the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and the ITO layer that stack gradually;
The material of described the first high refractive index layer is TiO 2, ZrO 2or Si 3n 4;
The material of described the first low-index layer is SiO 2or MgF 2;
The material of described the second high refractive index layer is TiO 2, ZrO 2or Si 3n 4;
The material of described the second low-index layer is SiO 2or MgF 2;
The thickness of described the first high refractive index layer is
The thickness of described the first low-index layer is
The thickness of described the second high refractive index layer is
The thickness of described the second low-index layer is
In one embodiment, the thickness of described the first high refractive index layer is
In one embodiment, the thickness of described the first low-index layer is
In one embodiment, the thickness of described the second high refractive index layer is
In one embodiment, the thickness of described the second low-index layer is
In one embodiment, the thickness of described ITO layer is
In one embodiment, the surface resistance of described ITO electro-conductive glass is 10 ohm～14 ohm, 14 ohm～20 ohm, 17～25 Europe or 20 ohm～30 ohm.
A preparation method for ITO electro-conductive glass, comprises the steps:
Glass is provided, dry after cleaning;
By the described glass surface after cleaning successively magnetron sputtering deposition the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and ITO layer, obtain described ITO electro-conductive glass, wherein, the material of described the first high refractive index layer is TiO 2, ZrO 2or Si 3n 4, the material of described the first low-index layer is SiO 2or MgF 2, the material of described the second high refractive index layer is TiO 2, ZrO 2or Si 3n 4, the material of described the second low-index layer is SiO 2or MgF 2, the thickness of described the first high refractive index layer is the thickness of described the first low-index layer is the thickness of described the second high refractive index layer is the thickness of described the second low-index layer is
In one embodiment, the thickness of described the first high refractive index layer is the thickness of described the first low-index layer is the thickness of described the second high refractive index layer is the thickness of described the second low-index layer is the thickness of described ITO layer is
In one embodiment, the surface resistance of described ITO electro-conductive glass is 10～14 Europe, 14～20 ohm, 17～25 ohm or 20～30 ohm.
This ITO electro-conductive glass, by substituting traditional transition rete with the first high refractive index layer, the first low-index layer, the second high refractive index layer and the second low-index layer, the film layer structure of refractive index height combination has increased the transmitance of ITO layer, can be when surface resistance be lower (10 ohm～30 ohm) meet ITO and the second low-refraction meets in 450nm, 550nm place transmitance the shadow requirement that disappears, and the color of ITO and the shadow layer that disappears is all very light, the shadow better effects if that disappears, more can meet the application demand of large-sized capacitive touch screen.Meanwhile, adopt TiO 2, ZrO 2or Si 3n 4deng material substitution Nb 2o 5as high-index material, no matter add that alkali is ultrasonic, alkali lye demoulding, can same alkaline reaction, adhesion, the compactness of ITO rete are more guaranteed, thus the touch controllable function of the capacitance plate product of preparing with ITO is guaranteed.
Accompanying drawing explanation
Fig. 1 is the structural representation of the ITO electro-conductive glass of an embodiment;
Fig. 2 is the preparation method's of ITO electro-conductive glass as shown in Figure 1 process flow diagram.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public concrete enforcement.
An embodiment ITO electro-conductive glass as shown in Figure 1, comprises the glass 10, the first high refractive index layer 20, the first low-index layer 30, the second high refractive index layer 40, the second low-index layer 50 and the ITO layer 60 that stack gradually.
Glass 10 can be selected the glass of float glass or other this area routines.
The material of the first high refractive index layer 20 is TiO 2, ZrO 2or Si 3n 4.TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt TiO 2, ZrO 2or Si 3n 4as the material of the first high refractive index layer 20, make the transmitance of the first high refractive index layer 20 relatively low.
The thickness of the first high refractive index layer 20 can be generally speaking, the thickness of the first low-index layer 20 is less for whole transmitance and the visual effect impact of ITO electro-conductive glass, and in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is to say, the first low-index layer 20 can omit.
At one, preferably in embodiment, the thickness of the first high refractive index layer 20 is
The material of the first low-index layer 30 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the first low-index layer 30, make the transmitance of the first low-index layer 30 relatively high.
In present embodiment, the thickness of the first low-index layer 30 is in a special embodiment, the thickness of the first low-index layer 30 can be 0, that is to say, the first low-index layer 30 can omit.
At one, preferably in embodiment, the thickness of the first low-index layer 30 is
The material of the second high refractive index layer 40 is TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt TiO 2, ZrO 2or Si 3n 4as the material of the second high refractive index layer 40, make the transmitance of the second high refractive index layer 40 relatively low.
In present embodiment, the thickness of the second high refractive index layer 40 is in a special embodiment, the thickness of the second high refractive index layer 40 can be 0, that is to say, the second high refractive index layer 40 can omit.
At one, preferably in embodiment, the thickness of the second high refractive index layer 40 is
The material of the second low-index layer 50 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the second low-index layer 50, make the transmitance of the second low-index layer 50 relatively high.
In present embodiment, the thickness of the second low-index layer 50 is in a special embodiment, the thickness of the second low-index layer 50 can be 0, that is to say, the second low-index layer 50 can omit.
At one, preferably in embodiment, the thickness of the second low-index layer 50 is
In present embodiment, the thickness of ITO layer 60 is
The surface resistance of ITO electro-conductive glass can be 10 ohm～14 ohm, 14 ohm～20 ohm, 17～25 Europe or 20 ohm～30 ohm.
Especially, the resistance range of corresponding ITO electro-conductive glass is 20 ohm～30 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 17 ohm～25 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 14 ohm～20 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 10 ohm～14 ohm, and the thickness of ITO layer 60 is
This ITO electro-conductive glass, by substituting traditional transition rete with the first high refractive index layer 20, the first low-index layer 30, the second high refractive index layer 40 and the second low-index layer 50, the film layer structure of refractive index height combination has increased the transmitance of ITO layer, can when surface resistance is lower, (10 ohm～30 ohm) can realize the shadow that disappears, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.Simultaneously the selection of high-index material, can guarantee that product withstands operations such as adding alkali is ultrasonic, alkali lye demoulding in following process process, and compactness and the adhesion of the shadow layer that guarantees to disappear guarantee the performance of product.
The preparation method of above-mentioned ITO electro-conductive glass as shown in Figure 2, comprises the steps:
S10, provide glass 10, dry after cleaning.
Glass 10 can be selected the glass of float glass or other this area routines.
S20, by glass 10 surfaces after cleaning successively magnetron sputtering deposition the first high refractive index layer 20, the first low-index layer 30, the second high refractive index layer 40, the second low-index layer 50 and ITO layer 60, obtain ITO electro-conductive glass.
The material of the first high refractive index layer 20 is TiO 2, ZrO 2or Si 3n 4.TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt TiO 2, ZrO 2or Si 3n 4as the material of the first high refractive index layer 20, make the transmitance of the first high refractive index layer 20 relatively low.
The thickness of the first high refractive index layer 20 can be generally speaking, the thickness of the first low-index layer 20 is less for whole transmitance and the visual effect impact of ITO electro-conductive glass, and in a special embodiment, the thickness of the first low-index layer 20 can be 0, that is to say, the first low-index layer 20 can omit.
At one, preferably in embodiment, the thickness of the first high refractive index layer 20 is
The material of the first low-index layer 30 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the first low-index layer 30, make the transmitance of the first low-index layer 30 relatively high.
In present embodiment, the thickness of the first low-index layer 30 is in a special embodiment, the thickness of the first low-index layer 30 can be 0, that is to say, the first low-index layer 30 can omit.
At one, preferably in embodiment, the thickness of the first low-index layer 30 is
The material of the second high refractive index layer 40 is TiO 2, ZrO 2or Si 3n 4.Nb 2o 5refractive index be 2.3, TiO 2refractive index be 2.3, ZrO 2refractive index be 2.17, Si 3n 4refractive index be 2.0.Adopt TiO 2, ZrO 2or Si 3n 4as the material of the second high refractive index layer 40, make the transmitance of the second high refractive index layer 40 relatively low.
In present embodiment, the thickness of the second high refractive index layer 40 is in a special embodiment, the thickness of the second high refractive index layer 40 can be 0, that is to say, the second high refractive index layer 40 can omit.
At one, preferably in embodiment, the thickness of the second high refractive index layer 40 is
The material of the second low-index layer 50 is SiO 2or MgF 2.SiO 2refractive index be 1.48, MgF 2refractive index be 1.38.Adopt SiO 2or MgF 2as the material of the second low-index layer 50, make the transmitance of the second low-index layer 50 relatively high.
In present embodiment, the thickness of the second low-index layer 50 is in a special embodiment, the thickness of the second low-index layer 50 can be 0, that is to say, the second low-index layer 50 can omit.
At one, preferably in embodiment, the thickness of the second low-index layer 50 is
In present embodiment, the thickness of ITO layer 60 is
The surface resistance of ITO electro-conductive glass can be 10 ohm～14 ohm, 14 ohm～20 ohm, 17～25 Europe or 20 ohm～30 ohm.
Especially, the resistance range of corresponding ITO electro-conductive glass is 20 ohm～30 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 17 ohm～25 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 14 ohm～20 ohm, and the thickness of ITO layer 60 is the resistance range of corresponding ITO electro-conductive glass is 10 ohm～14 ohm, and the thickness of ITO layer 60 is
The ITO electro-conductive glass that said method makes, by substituting traditional transition rete with the first high refractive index layer 20, the first low-index layer 30, the second high refractive index layer 40 and the second low-index layer 50, the film layer structure of refractive index height combination has increased the transmitance of ITO layer, can when surface resistance is lower, (10 ohm～30 ohm) can realize the shadow that disappears, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.
Be specific embodiment below.
Embodiment 1
It is dry after float glass is cleaned.
In operating pressure, be 2 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be tiO 2layer, thickness are siO 2layer, thickness are tiO 2layer, thickness are siO 2layer and thickness are iTO layer, obtain required ITO electro-conductive glass.
Embodiment 2
It is dry after float glass is cleaned.
In operating pressure, be 3 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be tiO 2layer, thickness are siO 2layer, thickness are tiO 2layer, thickness are siO 2layer and thickness are iTO layer, obtain required ITO electro-conductive glass.
Embodiment 3
It is dry after float glass is cleaned.
In operating pressure, be 8 * 10 -4under the condition of mbar, at Float Glass Surface successively deposit thickness, be zrO 2layer, thickness are siO 2layer, thickness are zrO 2layer, thickness are siO 2layer and thickness are iTO layer, obtain required ITO electro-conductive glass.
Embodiment 4
It is dry after float glass is cleaned.
In operating pressure, be 1 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be tiO 2layer, thickness are mgF 2layer, thickness are tiO 2layer, thickness are siO 2layer and thickness are iTO layer, obtain required ITO electro-conductive glass.
Embodiment 5
It is dry after float glass is cleaned.
In operating pressure, be 1 * 10 -3under the condition of mbar, at Float Glass Surface successively deposit thickness, be si 3n 4layer, thickness are mgF 2layer, thickness are si 3n 4layer, thickness are mgF 2layer and thickness are iTO layer, obtain required ITO electro-conductive glass.
The ITO electro-conductive glass that embodiment 1～5 is prepared, utilizes the SD-6000 chromascope of Japanese electric look to test transmitance, and result is as shown in table 1 below.
The transmission measurement test findings of the ITO electro-conductive glass that table 1: embodiment 1～5 prepares.
As can be seen from Table 1, the ITO electro-conductive glass that embodiment 1～5 prepares 450nm place transmitance poor≤2.0%, 550nm place transmitance poor≤1.0%, meet the low-resistance ITO shadow standard that disappears.
The ITO electro-conductive glass that embodiment 1～5 prepares, by the coupling of rete between the high low-index material of multilayer, can when surface resistance is lower, (10 ohm～30 ohm) can realize the shadow that disappears, and the shadow effect that disappears is better, more can meet the application demand of large-sized capacitive touch screen.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. the colourless low-resistance for the large size capacitive touch screen ITO electro-conductive glass of shadow that disappears, it is characterized in that, comprise the glass, the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and the ITO layer that stack gradually;
The material of described the first high refractive index layer is TiO 2, ZrO 2or Si 3n 4;
The material of described the first low-index layer is SiO 2or MgF 2;
The material of described the second high refractive index layer is TiO 2, ZrO 2or Si 3n 4;
The material of described the second low-index layer is SiO 2or MgF 2;
The thickness of described the first high refractive index layer is
The thickness of described the first low-index layer is
The thickness of described the second high refractive index layer is
The thickness of described the second low-index layer is
2. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the first high refractive index layer is
3. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the first low-index layer is
4. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the second high refractive index layer is
5. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described the second low-index layer is
6. ITO electro-conductive glass according to claim 1, is characterized in that, the thickness of described ITO layer is
7. according to the ITO electro-conductive glass described in any one in claim 1～6, it is characterized in that, the surface resistance of described ITO electro-conductive glass is 10 ohm～14 ohm, 14 ohm～20 ohm, 17～25 Europe or 20 ohm～30 ohm.
8. a preparation method for ITO electro-conductive glass, is characterized in that, comprises the steps:
Glass is provided, dry after cleaning;
By the described glass surface after cleaning successively magnetron sputtering deposition the first high refractive index layer, the first low-index layer, the second high refractive index layer, the second low-index layer and ITO layer, obtain described ITO electro-conductive glass, wherein, the material of described the first high refractive index layer is TiO 2, ZrO 2or Si 3n 4, the material of described the first low-index layer is SiO 2or MgF 2, the material of described the second high refractive index layer is TiO 2, ZrO 2or Si 3n 4, the material of described the second low-index layer is SiO 2or MgF 2, the thickness of described the first high refractive index layer is the thickness of described the first low-index layer is the thickness of described the second high refractive index layer is the thickness of described the second low-index layer is
9. the preparation method of ITO electro-conductive glass according to claim 8, is characterized in that, the thickness of described the first high refractive index layer is the thickness of described the first low-index layer is the thickness of described the second high refractive index layer is the thickness of described the second low-index layer is the thickness of described ITO layer is
10. the preparation method of ITO electro-conductive glass according to claim 8 or claim 9, is characterized in that, the surface resistance of described ITO electro-conductive glass is 10～14 Europe, 14～20 ohm, 17～25 ohm or 20～30 ohm.
CN201410386184.XA 2014-08-07 2014-08-07 ITO conducting glass and preparation method thereof Pending CN104166490A (en)

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988629A (en) * 2015-02-27 2016-10-05 宸鸿科技(厦门)有限公司 Touch panel
WO2016188013A1 (en) * 2015-05-27 2016-12-01 京东方科技集团股份有限公司 Touch display panel and fabricating method therefor, and display device
CN107168580A (en) * 2017-05-16 2017-09-15 京东方科技集团股份有限公司 A kind of Trackpad and its display screen

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988629A (en) * 2015-02-27 2016-10-05 宸鸿科技(厦门)有限公司 Touch panel
WO2016188013A1 (en) * 2015-05-27 2016-12-01 京东方科技集团股份有限公司 Touch display panel and fabricating method therefor, and display device
US9885902B2 (en) 2015-05-27 2018-02-06 Boe Technology Group Co., Ltd. Touch display panel, producing method thereof, and display apparatus
CN107168580A (en) * 2017-05-16 2017-09-15 京东方科技集团股份有限公司 A kind of Trackpad and its display screen
US11132075B2 (en) 2017-05-16 2021-09-28 Boe Technology Group Co., Ltd. Touchpad and display screen thereof

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