CN104947062A - Vacuum film forming device - Google Patents
Vacuum film forming device Download PDFInfo
- Publication number
- CN104947062A CN104947062A CN201510113153.1A CN201510113153A CN104947062A CN 104947062 A CN104947062 A CN 104947062A CN 201510113153 A CN201510113153 A CN 201510113153A CN 104947062 A CN104947062 A CN 104947062A
- Authority
- CN
- China
- Prior art keywords
- charging tray
- upstream side
- film
- downstream side
- pressure adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 34
- 238000011144 upstream manufacturing Methods 0.000 claims description 141
- 230000015572 biosynthetic process Effects 0.000 claims description 32
- 230000007246 mechanism Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 28
- 238000010168 coupling process Methods 0.000 description 28
- 238000005859 coupling reaction Methods 0.000 description 28
- 241001584775 Tunga penetrans Species 0.000 description 26
- 238000005477 sputtering target Methods 0.000 description 25
- 230000009471 action Effects 0.000 description 20
- 210000002381 plasma Anatomy 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a vacuum film forming device capable of uniformly carrying out film forming process for a substrate with high production efficiency; the substrate is supported by material plates (T); when the T passes a film forming zone opposite to film forming portions (P1 P2), a speed is lower than a transport speed of a normal T, so the T passes the film forming zone of a film forming chamber (CB3), many Ts can pass the film forming zone in a mutual contact manner.
Description
Technical field
The present invention relates on one side carrying substrate while carry out sputtering or the vacuum film formation apparatus of vacuum film formation process of CVD (Chemical Vapor Deposition: chemical vapour deposition) etc.
Background technology
When carrying out vacuum film formation process to substrates such as organic EL display glass substrate, liquid crystal indicator glass substrate, flat panel substrate used for solar batteries, plasma display glass substrate, photomask glass substrate, light base-board for plate, semiconductor wafers, use makes substrate continue through filming chamber, substrate is carried out to the vacuum film formation apparatus of film forming process.Patent Document 1 discloses a kind of sputter equipment, it has inlet, the first sputtering chamber, environmental gas separated part, the second sputtering chamber and downstream chamber, make substrate by inlet, the first sputtering chamber, environmental gas separated part, the second sputtering chamber and downstream chamber by multiple transport roller, sputter process is carried out to substrate.
Patent documentation 1:JP JP 2009-185350 publication
Such as, in such vacuum film formation apparatus, in order to effectively carry out film forming process to flat panel substrate used for solar batteries etc., utilize the charging tray that multiple substrate is supported.In addition, such vacuum film formation apparatus such as has: the filming chamber under a reduced pressure substrate being carried out to film forming process; Be disposed in the upstream side pressure adjustment part of the upstream side on the carrying direction of charging tray of filming chamber; Be disposed in the downstream side pressure adjustment unit in the downstream side on the carrying direction of charging tray of filming chamber; Be disposed in the gate valve (gate valve) between upstream side pressure adjustment part and filming chamber; Be disposed in the gate valve between filming chamber and downstream side pressure adjustment unit: separately to the pressure adjustmenting mechanism that the pressure of filming chamber, upstream side pressure adjustment part and downstream side pressure adjustment unit adjusts; By the carrying mechanism of charging tray successively upstream wall pressure adjustment part, filming chamber, the carrying of downstream side pressure adjustment unit.
In such vacuum film formation apparatus, between upstream side pressure adjustment part and filming chamber, or between filming chamber and downstream side pressure adjustment unit, after the pressure that adjustment is mutual, carry charging tray, therefore need intermittently to carry charging tray.When carrying charging tray so off and on, between each charging tray, produce interval.Therefore, the productivity of vacuum film formation is low.
In addition, when producing interval between each charging tray, isoionic state during film forming changes, and film-forming process becomes unstable, therefore sometimes can not film forming equably.And when producing interval between each charging tray, the film forming component passed through from the interval between each charging tray is piled up, and film forming component is attached on substrate again, thus yield rate reduces, or the cleaning interval of filming chamber is shortened, thus the operation factor of device reduce.
Summary of the invention
The present invention proposes to solve the problem, and its object is to provides a kind of vacuum film formation apparatus that can carry out film forming process with high productivity equably to substrate.
The vacuum film formation apparatus of the invention that technical scheme 1 is recorded, have: charging tray, support multiple substrate, filming chamber, under a reduced pressure film forming process is carried out to substrate, upstream side pressure adjustment part, be disposed in the upstream side on the carrying direction of described charging tray of described filming chamber, trip wall pressure adjustment part, be disposed in the downstream side on the carrying direction of described charging tray of described filming chamber, first gate valve, be disposed between described upstream side pressure adjustment part and described filming chamber, second gate valve, be disposed between described filming chamber and described downstream side pressure adjustment unit, pressure adjustmenting mechanism, to described filming chamber, the pressure of described upstream side pressure adjustment part and described downstream side pressure adjustment unit adjusts individually, carrying mechanism, described charging tray is carried to described upstream side pressure adjustment part successively, described filming chamber, described downstream side pressure adjustment unit, the feature of this vacuum film formation apparatus is, described filming chamber comprises and carries out the film-forming region of film forming process to the substrate supported by described charging tray and be formed in the upstream side non-film-forming region of both sides and the downstream side non-film-forming region of this film-forming region, described carrying mechanism can control separately described charging tray in described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the film-forming region of described filming chamber, transporting velocity in the downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, by make the substrate that supported by described charging tray by the transporting velocity of described charging tray during described film-forming region lower than the substrate supported by described charging tray by described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the transporting velocity of the described charging tray when downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, when described charging tray passes through the film-forming region of described filming chamber, make described charging tray with the state contacted with each other by described film-forming region.
The invention that technical scheme 2 is recorded, in the invention that technical scheme 1 is recorded, described upstream side pressure adjustment part has: upstream side pressure adjustment room, be disposed in the upstream side on the carrying direction of described charging tray of described filming chamber, upstream side load lock, be disposed in the upstream side on the carrying direction of described charging tray of this upstream side pressure adjustment room, the 3rd gate valve, be disposed between described upstream side pressure adjustment room and described upstream side load lock; And, described downstream side pressure adjustment unit has: downstream side pressure control chamber, be disposed in the downstream side on the carrying direction of described charging tray of described filming chamber, downstream side load lock, be disposed in the downstream side on the carrying direction of described charging tray of this downstream side pressure control chamber, 4th gate valve, is disposed between described downstream side pressure control chamber and described downstream side load lock; Described pressure adjustmenting mechanism adjusts separately the pressure of described upstream side pressure adjustment room, described upstream side load lock, described downstream side pressure control chamber and described downstream side load lock.
The invention that technical scheme 3 is recorded, in the invention that technical scheme 2 is recorded, described carrying mechanism carries described charging tray at described upstream side load lock, described upstream side pressure adjustment room, described downstream side pressure control chamber and described downstream side load lock intermittent, in described filming chamber, carry described charging tray continuously.
The invention that technical scheme 4 is recorded, in the invention that any one of technical scheme 1 to technical scheme 3 is recorded, described carrying mechanism has and supports and the multiple transport rollers rotated described charging tray.
The vacuum film formation apparatus of the invention that technical scheme 5 is recorded, have: filming chamber, under a reduced pressure film forming process is carried out to substrate, upstream side pressure adjustment part, be disposed in the upstream side on the carrying direction of described substrate of described filming chamber, downstream side pressure adjustment unit, be disposed in the downstream side on the carrying direction of described substrate of described filming chamber, first gate valve, be disposed between described upstream side pressure adjustment part and described filming chamber, second gate valve, be disposed between described filming chamber and described downstream side pressure adjustment unit, pressure adjustmenting mechanism, to described filming chamber, the pressure of described upstream side pressure adjustment part and described downstream side pressure adjustment unit adjusts separately, carrying mechanism, described substrate is carried to described upstream side pressure adjustment part successively, described filming chamber, described downstream side pressure adjustment unit, the feature of this vacuum film formation apparatus is, described filming chamber comprises and carries out the film-forming region of film forming process to described substrate and be formed in the upstream side non-film-forming region of both sides and the downstream side non-film-forming region of this film-forming region, described carrying mechanism can control separately described substrate in described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the film-forming region of described filming chamber, transporting velocity in the downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, by make described substrate by the transporting velocity of described substrate during described film-forming region lower than described substrate by described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the transporting velocity of the described substrate when downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, when described substrate passes through the film-forming region of described filming chamber, make described substrate with the state contacted with each other by described film-forming region.
According to technical scheme 1 to technical scheme 4 record invention, due in film-forming region continuous transport substrate while carry out film forming process, so film forming process can be carried out with high productivity.In addition, due to when charging tray is by film-forming region, charging tray by film-forming region, so can prevent film forming component from piling up between each charging tray, and can carry out film forming process with the state contacted with each other equably.
According to the invention that technical scheme 5 is recorded, when do not use charging tray and directly carrying substrate, due in film-forming region continuously carrying substrate while carry out film forming process, so film forming process can be carried out with high productivity.In addition, due to when substrate is by film-forming region, substrate by film-forming region, so can prevent film forming component from piling up between each substrate, and can perform film forming process with the state contacted with each other equably.
Accompanying drawing explanation
Fig. 1 is the schematic configuration side-view of vacuum film formation apparatus of the present invention.
Fig. 2 is the vertical view of the schematic configuration of vacuum film formation apparatus of the present invention.
Fig. 3 illustrates that charging tray T is by the explanatory view to the decompression state that charging tray T reduces pressure when upstream side load lock CB1, upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4 and downstream side load lock CB5.
Fig. 4 represents by multiple transport roller 11 at upstream side load lock CB1, the stereographic map of upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4 and downstream side load lock CB5 carrying to the state of the charging tray T that multiple substrate S supports.
Fig. 5 be represent filming chamber CB3 film-forming region F1 near the figure of schematic configuration.
Fig. 6 is the figure of the schematic configuration being expressed as membranous part P1 (P2).
Fig. 7 is the block diagram of the Controlling System representing vacuum film formation apparatus of the present invention.
Fig. 8 is the explanatory view of the carrying control action representing charging tray T.
Fig. 9 is the explanatory view of the carrying control action representing charging tray T.
Figure 10 is the explanatory view of the carrying control action representing charging tray T.
Figure 11 is the explanatory view of the carrying control action representing charging tray T.
Figure 12 is the explanatory view of the carrying control action representing charging tray T.
Figure 13 is the explanatory view of the carrying control action representing charging tray T.
Figure 14 is the explanatory view of the carrying control action representing charging tray T.
Figure 15 is the explanatory view of the carrying control action representing charging tray T.
Figure 16 is the explanatory view of the carrying control action representing charging tray T.
Figure 17 is the explanatory view of the carrying control action representing charging tray T.
Figure 18 is the explanatory view of the carrying control action representing charging tray T.
Figure 19 is the explanatory view of the carrying control action representing charging tray T.
Figure 20 is the explanatory view of the carrying control action representing charging tray T.
Figure 21 is the explanatory view of the carrying control action representing charging tray T.
Figure 22 is the explanatory view of the carrying control action representing charging tray T.
Figure 23 is the explanatory view of the carrying control action representing charging tray T.
Description of reference numerals
11 transport rollers
12 side plates
13 claw components
21 sputtering targets
22 foundation plates
23 anodes
24 magnet
25 jigger coupling type antennas
29 sputtering power supplys
32 jigger coupling type plasma generating units
90 gate valve opening/closing portions
100 control parts
CB1 upstream side load lock (load-lock chamber))
CB2 upstream side pressure adjustment room
CB3 filming chamber
CB4 downstream side pressure control chamber
CB5 downstream side load lock
CV1 imports conveying belt
CV2 exports conveying belt
F1 film-forming region
G1 ~ G6 gate valve
M1 ~ M9 motor
P1 becomes membranous part
P2 becomes membranous part
S substrate
SV1 control valve
SV2 control valve
SV3 control valve
T charging tray
V1 vacuum valve
V2 vacuum valve
VG1 ~ VG5 vacuum manometer
Embodiment
Below, based on accompanying drawing, embodiments of the present invention are described.Fig. 1 is the side-view of the schematic configuration of vacuum film formation apparatus of the present invention, and Fig. 2 is the vertical view of the schematic configuration of vacuum film formation apparatus of the present invention.
This vacuum film formation apparatus has importing conveying belt CV1, upstream side load lock CB1, upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4, downstream side load lock CB5 and exports conveying belt CV2.In addition, illustrate multiple flat panel substrate used for solar batteries (following in Fig. 1 and Fig. 2, being only called " substrate ") first charging tray T1 (when carrying out general name to multiple charging tray, being only called " charging tray T ") of carrying out supporting be arranged in the state of upstream side load lock CB1.By carrying out the effect of the multiple transport rollers 11 rotated from the supported underneath charging tray T of charging tray T, successively at importing conveying belt CV1, upstream side load lock CB1, upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4, downstream side load lock CB5 and export in conveying belt CV2 and carry charging tray T.
As shown in Figure 1, between importing conveying belt CV1 and upstream side load lock CB1, gate valve G1 is equipped with.In addition, between upstream side load lock CB1 and upstream side pressure adjustment room CB2, gate valve G2 is equipped with.In addition, between upstream side pressure adjustment room CB2 and filming chamber CB3, gate valve G3 is equipped with.In addition, between filming chamber CB3 and downstream side pressure control chamber CB4, gate valve G4 is equipped with.In addition, between downstream side pressure control chamber CB4 and downstream side load lock CB5, gate valve G5 is equipped with.And, between downstream side load lock CB5 and output conveying belt CV2, be equipped with gate valve G6.By the effect of gate valve opening/closing portion 90 described later, make these gate valves G1, G2, G3, G4, G5, G6 only charging tray T by time open.
Under atmospheric pressure, upstream side load lock CB1 moves into the charging tray T come from treatment process carrying before by importing conveying belt CV1, by the effect of the vacuum pump VP1 connected via vacuum valve V1, indoor are made to become the pressure close with setting Vacuum Pressure during film forming at short notice.The vacuum manometer VG1 for the Vacuum Pressure in measuring cell is equipped in this upstream side load lock CB1.
Move into charging tray T from upstream side load lock CB1 upstream wall pressure adjustment room CB2, indoor upstream side pressure being adjusted room CB2 become setting pressure during film forming.In this upstream side pressure adjustment room CB2, the control valve SV1 be connected with vacuum pump VP2 is made to open out completely at first, below setting pressure when making indoor become film forming at short notice, then, carry out pressure adjusting by control valve SV1, make indoor pressure consistent with setting pressure during film forming.The vacuum manometer VG2 for the Vacuum Pressure in measuring cell is equipped in this upstream side pressure adjustment room CB2.In addition, can also by the heating chamber of this upstream side pressure adjustment room CB2 as the substrate supported by charging tray T.
Move into charging tray T from upstream side pressure adjustment room CB2 to filming chamber CB3, in this filming chamber CB3, carry out film forming process with setting pressure during film forming.In this filming chamber CB3, by the effect of the control valve SV2 be connected with vacuum pump VP3, make indoor pressure consistent with setting pressure during film forming all the time.The vacuum manometer VG3 for the Vacuum Pressure in measuring cell is equipped in this filming chamber CB3.In addition, in this filming chamber CB3, a pair one-tenth membranous part P1, P2 described later is equipped with.
Adjust room CB4 from filming chamber CB3 to downstream wall pressure and move into charging tray T, and take out of charging tray T from downstream side pressure control chamber CB4 to downstream side load lock CB5.In the pressure control chamber CB4 of this downstream side, by the effect of the control valve SV3 be connected with vacuum pump VP4, indoor pressure is made to become the Vacuum Pressure of regulation.The vacuum manometer VG4 for the Vacuum Pressure in measuring cell is equipped in the pressure control chamber CB4 of this downstream side.In addition, can by the cooling room of this downstream side pressure control chamber CB4 as the substrate supported by charging tray T.
Move into charging tray T from downstream side pressure control chamber CB4 to downstream side load lock CB5, and take out of charging tray T from downstream side load lock CB5 to device outside.In the load lock CB5 of this downstream side, by the effect of the vacuum pump VP5 connected via vacuum valve V2, indoor pressure is made to become the Vacuum Pressure of regulation.The vacuum manometer VG5 for the Vacuum Pressure in measuring cell is equipped in the load lock CB5 of this downstream side.
Fig. 3 illustrates that charging tray T is by the explanatory view to the decompression state that charging tray T reduces pressure when upstream side load lock CB1, upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4 and downstream side load lock CB5.In addition, in figure 3, A represents atmospheric pressure state, and E represents the state of carrying out pressure adjusting, and V represents the state of setting pressure when becoming film forming, and V0 represents the state of the pressure becoming close with setting pressure.
When being moved into upstream side load lock CB1 from importing conveying belt CV1 by charging tray T, upstream side load lock CB1 becomes the state of normal atmosphere A.From this state, by the effect of the vacuum pump VP1 connected via vacuum valve V1, indoor are made to become the state of the pressure V0 close with setting pressure at short notice.Now, carry out pressure adjusting by control valve SV1, make upstream side pressure adjust the state of setting pressure V when room CB2 becomes film forming.In this condition, open gate valve G2, charging tray T is carried to upstream side pressure adjustment room CB2 from upstream side load lock CB1.In upstream side pressure adjustment room CB2, adjusted the pressure variation produced owing to opening gate valve G2 by control valve SV1.
During setting pressure V when the pressure of upstream side pressure adjustment room CB2 becomes film forming, open gate valve G3, charging tray T is carried to filming chamber CB3 from upstream side pressure adjustment room CB2.Now, due to the setting pressure V when pressure in upstream side pressure adjustment room CB2 becomes film forming, so the pressure in filming chamber CN3 does not change.Under this setting pressure V, film forming process is carried out to the substrate supported by charging tray T.
At the end of the film forming process to the substrate supported by charging tray T, open gate valve G4, charging tray T is carried to downstream side pressure control chamber CB4 from filming chamber CB3.Now, due to the effect by control valve SV3, setting pressure V when making the pressure in the pressure control chamber CB4 of downstream side become film forming, so the pressure in filming chamber CB3 does not change.
Then, open gate valve G5, charging tray T is carried to downstream side load lock CB5 from downstream side pressure control chamber CB4.Now, by the effect of the vacuum pump VP5 connected via vacuum valve V2, make the pressure V0 that the pressure in the load lock CB5 of downstream side becomes close with setting pressure in advance.When charging tray T moves to downstream side load lock CB5, closing gate valve G5, by the effect of control valve SV3, setting pressure V when making the pressure recovery in the pressure control chamber CB4 of downstream side be film forming.
Then, open gate valve G6, charging tray T is carried to from downstream side load lock CB5 and exports conveying belt CV2.When charging tray T moves to output conveying belt CV2, closing gate valve G6, by the effect of the vacuum pump VP5 connected via vacuum valve V2, makes the pressure V0 that the indoor of downstream side load lock CB5 become close with setting Vacuum Pressure at short notice.
Fig. 4 represents the stereographic map being carried the state to the charging tray T supporting multiple substrate S by multiple transport roller 11 in upstream side load lock CB1, upstream side pressure adjustment room CB2, filming chamber CB3, downstream side pressure control chamber CB4 and downstream side load lock CB5.
The charging tray T of rectangle is formed 9 opening portions, is equipped with the substrate S of rectangle in these opening portions respectively with the state supported by claw component 13.This charging tray T is supported by multiple transport roller 11.These transport rollers 11 are formed with flange part, are supported respectively by pair of side plates 12.Multiple transport roller 11 synchronous rotary, carries charging tray T by multiple transport roller 11.
In addition, as shown in Figure 2, the transport roller 11 importing conveying belt CV1 is driven by motor M1 and rotates, transport roller 11 in upstream side load lock CB1 is driven by motor M2 and rotates, transport roller 11 in upstream side pressure adjustment room CB2 is driven by motor M3 and rotates, the transport roller 11 being arranged in the non-film-forming region of film-forming region upstream side described later of filming chamber CB3 is driven by motor M4 and rotates, transport roller 11 in the film-forming region of filming chamber CB3 is driven by motor M5 and rotates, the transport roller 11 being arranged in the non-film-forming region in downstream side, film-forming region of filming chamber CB3 is driven by motor M6 and rotates, transport roller 11 in the pressure control chamber CB4 of downstream side is driven by motor M7 and rotates, transport roller 11 in the load lock CB5 of downstream side is driven by motor M8 and rotates, the transport roller 11 exported in conveying belt CV2 is driven by motor M9 and rotates.
Therefore, by controlling the rotation of these motors M1, M2, M3, M4, M5, M6, M7, M8, M9, in each region, charging tray T can be carried with speed different respectively intermittence or continuity with the speed of regulation.
Then, the structure of above-mentioned a pair one-tenth membranous part P1, P2 is described.Fig. 5 be represent filming chamber CB3 film-forming region F1 near the figure of primary structure.
A pair one-tenth membranous part P1, P2 is equipped in filming chamber CB3.Lower surface film forming on substrate S of these multiple substrate S becoming membranous part P1, P2 to support from the charging tray T that the effect by transport roller 11 is handled upside down.In addition, become film-forming region F1 from the region of end to the end becoming the downstream side of membranous part P2 of the upstream side of the one-tenth membranous part P1 filming chamber CB3, other region in filming chamber CB3 becomes non-film-forming region F2.
Fig. 6 is the figure of the schematic configuration being expressed as membranous part P1 (P2).
This one-tenth membranous part P1 has sputtering target (target) 21, the foundation plate 22 forming negative electrode, sputtering power supply 29, magnet 24, anode 23 and jigger coupling type plasma generating unit 32.In addition, this one-tenth membranous part P1 has the illustrated cooling body of omission for cooling the jigger coupling type antenna 25 etc. of sputtering target 21, foundation plate 22 and jigger coupling type plasma generating unit 32.
At this, the material as sputtering target 21 uses aluminium (A1).By not shown maintaining part, sputtering target 21 is remained flat-hand position in the transport path with charging tray T apart from the position of the distance specified, and makes sputtering target 21 be in the state insulated with filming chamber CB3.Thus, sputtering target 21 with the state parallel with the substrate S supported by charging tray T and substrate S-phase to configuration.
Foundation plate 22 abuts from the below of sputtering target 21 with sputtering target 21.In addition, sputtering power supply 29 pairs of foundation plates 22 apply sputtering voltage.At this, sputtering voltage can be such as the volts DS of negative voltage, also can be the voltage of the pulse type formed by negative voltage and positive voltage, also can for addition of the interchange sputtering voltage of negative bias voltage.Forming electric field by applying sputtering voltage via foundation plate 22 to sputtering target 21, producing plasma body by this electric field.
Magnet 24 is configured in the below of foundation plate 22.Magnet 24 is the magnet of magnetron sputtering (Magnetron sputtering), such as, can be formed by permanent magnet, forms static magnetic field (magnetic control magnetic field) at the near surface of sputtering target 21.By forming this static magnetic field, shield the near surface that the plasma body produced by electric field is only present in sputtering target 21.In addition, anode 23 is configured in the side of foundation plate 22.The top of anode 23 with the side of non-contacting state and sputtering target 21 close to configuring.
Jigger coupling type plasma generating unit 32 has 2 jigger coupling type antennas 25 as the high frequency antenna of jigger coupling type.Each jigger coupling type antenna 25 covers the component metal tubular shape conductor being bent into U-shaped with dielectric mediums such as quartz.A pair jigger coupling type antenna 25 is configured in the upstream side on the carrying direction of charging tray T and the downstream side of sputtering target 21 respectively.Each jigger coupling type antenna 25 configures along the side of sputtering target 21.In addition, the height location of adjustment jigger coupling type antenna 25 and sputtering target 21, makes the side being configured in the upper surface of sputtering target 21 near the end of the outstanding side of each jigger coupling type antenna 25.These jigger coupling type antennas 25 are fixed in filming chamber CB3 under the state insulated with filming chamber CB3.
One end of each jigger coupling type antenna 25 is connected with high-frequency power 31 via matching circuit 30.In addition, the other end ground connection of each jigger coupling type antenna 25.When flowing high frequency current from high-frequency power 31 to each jigger coupling type antenna 25, making Accelerating electron by the electric field (high frequency induction field) around jigger coupling type antenna 25, producing inductively coupled plasma.By the static magnetic field that magnet 24 is formed near sputtering target 21, this plasma body is shielded together with the plasma body produced by above-mentioned electric field the surface portion at sputtering target 21.
As mentioned above, jigger coupling type antenna 25 is formed as U-shaped.The jigger coupling type antenna 25 of such U-shaped is equivalent to the inductive coupling antenna that the number of turn is less than 1 circle, inductance is that the inductance of the above inductive coupling antenna of 1 circle is low than the number of turn, therefore the high frequency loss of voltage produced at the two ends of jigger coupling type antenna 25, thus suppress to cause because being coupled with the Electrostatic Plasmas generated the situation that the high frequency of plasma potential fluctuates.Therefore, it is possible to the too much electrical losses that the plasma potential reduced because tending to potential to ground fluctuates and causes, thus plasma potential can be suppressed low especially.
In addition, between each jigger coupling type antenna 25 and sputtering target 21, be formed with ejiction opening 28, this ejiction opening 28 is connected with not shown gas supply part.The gas supplied from gas supply part to ejiction opening 28 is supplied to and is configured with into the process space of membranous part P1.Preferably these ejiction openings 28 are arranged on the position corresponding with 2 jigger coupling type antennas 25.
In addition, a pair shutter 26 is equipped with in the outside of 2 jigger coupling type antennas 25.These shutters 26 have the defencive function limited the scope of dispersing at the plasma body becoming membranous part P1 to produce or sputtering.
In such one-tenth membranous part P1, the region between from ejiction opening 28 to a pair shutter 26, supplies the argon gas as sputter gas and the oxygen as reactant gases.In addition, flow from high-frequency power 31 to jigger coupling type antenna 25 high frequency current, and apply sputtering voltage from sputtering power supply 29 pairs of foundation plates 22.Like this, by the high frequency induction field of the surrounding of jigger coupling type antenna 25, produce inductively coupled plasma.In addition, by applying sputtering voltage to foundation plate 22, near sputtering target 21, produce high density plasma.By the static magnetic field that magnet 24 is formed near sputtering target 21, by the surface portion of these 2 kinds of plasma shields at sputtering target 21.In addition, the ion in plasma ambient gas and sputtering target 21 collide, and to fly out aluminium (A1) atom from sputtering target 21.Form aluminium lamination by this aluminium atom at the lower surface of substrate S, complete film forming process thus.
Fig. 7 is the block diagram of the Controlling System representing vacuum film formation apparatus of the present invention.
This vacuum film formation apparatus has the control part 100 of control device entirety, this control part 110 have for the ROM of the operation program needed for memory control device, when controlling temporary storage data etc. RAM and carry out the CPU of logical operation.This control part 100 is connected with above-mentioned motor M1, M2, M3, M4, M5, M6, M7, M8, M9, controls the rotation of these motors M1, M2, M3, M4, M5, M6, M7, M8, M9.In addition, this control part 100 is connected with above-mentioned vacuum manometer VG1, VG2, VG3, VG4, VG5.In addition, this control part 100 is connected with above-mentioned vacuum valve V1, V2 and control valve SV1, SV2, SV3.And, this control part 100 with for driving the gate valve opening/closing portion 90 of above-mentioned gate valve G1, G2, G3, G4, G5, G6 opening and closing to be connected, control gate valve G1, G2, G3, G4, G5, G6 opening and closing via gate valve opening/closing portion 90.
Then, the carrying control action of above-mentioned vacuum film formation apparatus to charging tray T is described.Fig. 8 to Figure 23 is the explanatory view of the carrying control action representing charging tray T.In addition, Fig. 8, Figure 10, Figure 12, Figure 14, Figure 16, Figure 18, Figure 20, Figure 22 represent the side-looking face of vacuum film formation apparatus, and what Fig. 9, Figure 11, Figure 13, Figure 15, Figure 17, Figure 19, Figure 21, Figure 23 represented vacuum film formation apparatus overlooks face.In addition, these figure are corresponding with above-mentioned Fig. 1 and Fig. 2, but eliminate a part of Reference numeral shown in Fig. 1 and Fig. 2.
As shown in Figure 1 and Figure 2, first the charging tray T1 supporting multiple substrate S is carried to upstream side load lock CB1 from importing conveying belt CV1.The transporting velocity of charging tray T1 is now the speed faster than transporting velocity S1 during film forming and transporting velocity S2.As shown in Figure 1 and Figure 2, this charging tray T1 temporarily stops being handled upside down in upstream side load lock CB1, and adjusts the pressure in upstream side load lock CB1.
Then, as shown in FIG. 8 and 9, charging tray T1 is carried to upstream side pressure adjustment room CB2 from upstream side load lock CB1.The transporting velocity of charging tray T1 now is also the speed faster than transporting velocity S1 during film forming and transporting velocity S2.As shown in FIG. 8 and 9, this charging tray T1 temporarily stops being handled upside down in upstream side pressure adjustment room CB2, and adjusts the pressure in upstream side pressure adjustment room CB2.
Then, as shown in figs.10 and 11, charging tray T1 is carried to filming chamber CB3 from upstream side pressure adjustment room CB2.Detailed action when carrying out this carrying is as follows, namely, charging tray T1 is carried with the speed faster than transporting velocity S1 during film forming and transporting velocity S2, (that is, the front ends be positioned on carrying direction on the carrying direction of the substrate S in front in the multiple substrate S supported by charging tray T1) arrive the film-forming region F1 shown in Fig. 5 until the front end of the substrate S supported by charging tray T1.On the other hand, after arrival film-forming region, the front end F1 of the substrate S supported by charging tray T1, until the rear end of the substrate S supported by charging tray T1 (namely, on carrying direction, be positioned at rear end on the carrying direction of last substrate S in multiple substrate S that charging tray T1 supports) leave from film-forming region F1 during, carry charging tray T1 with transporting velocity S1 during film forming.That is, when the film-forming region F1 of the substrate S supported by charging tray T1 by filming chamber CB3, charging tray T1 is carried with transporting velocity S1 during film forming.
In addition, as shown in figs.10 and 11, next charging tray T2 is carried to upstream side load lock CB1 from importing conveying belt CV1.
As shown in Figure 12 and Figure 13, transporting velocity S1 during film forming with low speed in the film-forming region F1 of filming chamber CB3 carries during first charging tray T1 carry out film forming process, next charging tray T2 is carried to upstream side pressure adjustment room CB2 from upstream side load lock CB1, and upstream side load lock CB1 will be carried to from importing conveying belt CV1 by next charging tray T3 again.These charging trays T2, T3 are identical with charging tray T1 intermittently to be carried, and its transporting velocity is identical with charging tray T1, is the speed faster than transporting velocity S1 during film forming and transporting velocity S2.
In addition, transporting velocity S1 during film forming with low speed in the film-forming region F1 of filming chamber CB3 carries during first charging tray T1 carry out film forming process, and next charging tray T2 is carried to filming chamber CB3 from upstream side pressure adjustment room CB2.As mentioned above, the transporting velocity of charging tray T2 is now the speed faster than transporting velocity S1 during film forming and transporting velocity S2.Therefore, as shown in Figure 14 and Figure 15, in filming chamber CB3, first charging tray T1 and next charging tray T2 abuts mutually.Charging tray T1 when this abutted position is arrival film-forming region, the front end F1 of the substrate S supported by charging tray T2 and the position of charging tray T2.Then, after abutting, the transporting velocity of charging tray T2 becomes transporting velocity S1 during film forming.Thus, charging tray T1 and charging tray T2 with the state contacted with each other by film-forming region F1.Now, upstream side load lock CB1 will be carried to from importing conveying belt CV1 by next charging tray T3 again.
As shown in Figure 16 and Figure 17, at charging tray T1 and charging tray T2 with the state contacted with each other and with the device of transporting velocity S1 during film forming by film-forming region F1, charging tray T3 is carried to upstream side pressure adjustment room CB2 from upstream side load lock CB1, and upstream side load lock CB1 will be carried to from importing conveying belt CV1 by next charging tray T4 again.Now, identical with charging tray T1, T2, intermittently carry charging tray T3, T4, in addition, transporting velocity is now the speed faster than transporting velocity S1 during film forming and transporting velocity S2.
Under the state that charging tray T1 and charging tray T2 contacts with each other, during transporting velocity S1 during film forming with low speed in the film-forming region F1 of filming chamber CB3 carries out carrying and carries out film forming process, next charging tray T3 is carried to filming chamber CB3 from upstream side pressure adjustment room CB2.The transporting velocity of charging tray T3 is now the speed faster than transporting velocity S1 during film forming and transporting velocity S2.Therefore, as shown in Figure 18 and Figure 19, in filming chamber CB3, the charging tray T2 in the charging tray T1 be handled upside down with the state contacted with each other and charging tray T2 abuts with the next charging tray T3 of this charging tray T2.Charging tray T2 when this abutted position is arrival film-forming region, the front end F1 of the substrate S supported by charging tray T3 and the position of charging tray T3.In addition, after abutting, the transporting velocity of charging tray T3 becomes transporting velocity S1 during film forming.Thus, charging tray T1 and charging tray T2, charging tray T2 and charging tray T3 with the state contacted with each other by film-forming region F1.Now, upstream side load lock CB1 will be carried to from importing conveying belt CV1 by next charging tray T4 again.
When the rear end of the substrate S supported by first charging tray T1 is left from the film-forming region F1 of filming chamber CB3, the transporting velocity of charging tray T1 switches to the speed faster than transporting velocity S1 during film forming and transporting velocity S2.Therefore, the transporting velocity S1 when substrate S supported by charging tray T2 and charging tray T3 is film forming by the transporting velocity of the charging tray T2 during F1 of film-forming region and charging tray T3.Therefore, as shown in Figure 20 and Figure 21, the state that releasing charging tray T1, charging tray T2 and charging tray T3 contact with each other, charging tray T1 is separated with charging tray T2 and charging tray T3.In addition, with the speed faster than transporting velocity S1 during film forming and transporting velocity S2, charging tray T1 is carried to downstream side pressure control chamber CB4 from filming chamber CB3.Then, charging tray T1 is temporarily stopped carrying in the pressure control chamber CB4 of downstream side, and the pressure in adjustment downstream side pressure control chamber CB4.Now, upstream side charging tray T2 and charging tray T3 is still handled upside down with transporting velocity S1 during film forming, and the substrate S continued being supported by these 2 charging trays carries out film forming.
Then, as shown in Figure 22 and Figure 23, charging tray T1 is carried to downstream side load lock CB5 from downstream side pressure control chamber CB4.Then, temporarily stop carrying at downstream side load lock CB5, and the pressure (to atmosphere opening) in adjustment downstream side load lock CB5.The transporting velocity from from this downstream side pressure control chamber CB4 to downstream side load lock CB5 of charging tray T1 is the speed faster than transporting velocity S1 during film forming and transporting velocity S2.In addition, with to carry charging tray T1 from downstream side pressure control chamber CB4 to downstream side load lock CB5 synchronous, charging tray T4 is carried to upstream side pressure adjustment room CB2 from upstream side load lock CB1, in addition, next charging tray T5 is carried to upstream side load lock CB1 from importing conveying belt CV1.The transporting velocity of this charging tray T4 and charging tray T5 is the speed faster than transporting velocity S1 during film forming and transporting velocity S2, same with the charging tray T-phase in downstream side, intermittently carries it.
Then, first charging tray T1 is carried to output conveying belt CV2 from downstream side load lock CB5.Thus, the film forming process of the multiple substrate S supported by charging tray T1 terminates.Below, by same action, carry out the film forming process of the multiple substrate S supported by the charging tray T of upstream side.
Then, other embodiment of the present invention is described.In the above-described embodiment, employing carries the structure to the charging tray T that multiple substrate S supports by transport roller 11, but as other embodiment, can adopt and carry out the structure of carrying by the direct supporting substrate S of transport roller, replace the structure by charging tray T supporting substrate S.When adopting such structure, also during substrate S passes through film-forming region F1, carry with transporting velocity S1 during film forming, during in addition, carry with the transporting velocity S2 faster than it, thus, when substrate S is by film-forming region F1, multiple substrate S by film-forming region F1, thus can obtain the effect identical with above-mentioned embodiment, effect with the state contacted with each other.In such embodiment, by multiple transport roller 11 carrying substrate S, replace the charging tray T shown in above-mentioned each figure.
In addition, in the above-described embodiment, formed the upstream side pressure adjustment part of the upstream side of filming chamber CB3 by upstream side load lock CB1 and upstream side pressure adjustment room CB2, formed the downstream side pressure adjustment unit in the downstream side of filming chamber CB3 by downstream side load lock CB4 and downstream side pressure control chamber CB5.But, upstream side pressure adjustment part and downstream side pressure adjustment unit can be formed respectively by single room.
Claims (5)
1. a vacuum film formation apparatus,
Have:
Charging tray, supports multiple substrate,
Filming chamber, carries out film forming process to substrate under a reduced pressure,
Upstream side pressure adjustment part, is disposed in the upstream side on the carrying direction of described charging tray of described filming chamber,
Trip wall pressure adjustment part, is disposed in the downstream side on the carrying direction of described charging tray of described filming chamber,
First gate valve, is disposed between described upstream side pressure adjustment part and described filming chamber,
Second gate valve, is disposed between described filming chamber and described downstream side pressure adjustment unit,
Pressure adjustmenting mechanism, adjusts individually to the pressure of described filming chamber, described upstream side pressure adjustment part and described downstream side pressure adjustment unit,
Carrying mechanism, is carried to described upstream side pressure adjustment part, described filming chamber, described downstream side pressure adjustment unit successively by described charging tray;
The feature of this vacuum film formation apparatus is,
Described filming chamber comprises and carries out the film-forming region of film forming process to the substrate supported by described charging tray and be formed in the upstream side non-film-forming region of both sides and the downstream side non-film-forming region of this film-forming region,
Described carrying mechanism can control separately described charging tray in described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the film-forming region of described filming chamber, transporting velocity in the downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, by make the substrate that supported by described charging tray by the transporting velocity of described charging tray during described film-forming region lower than the substrate supported by described charging tray by described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the transporting velocity of the described charging tray when downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, when described charging tray passes through the film-forming region of described filming chamber, make described charging tray with the state contacted with each other by described film-forming region.
2. vacuum film formation apparatus according to claim 1, is characterized in that,
Described upstream side pressure adjustment part has:
Upstream side pressure adjustment room, is disposed in the upstream side on the carrying direction of described charging tray of described filming chamber,
Upstream side load lock, is disposed in the upstream side on the carrying direction of described charging tray of this upstream side pressure adjustment room,
3rd gate valve, is disposed between described upstream side pressure adjustment room and described upstream side load lock; Further,
Described downstream side pressure adjustment unit has:
Downstream side pressure control chamber, is disposed in the downstream side on the carrying direction of described charging tray of described filming chamber,
Downstream side load lock, is disposed in the downstream side on the carrying direction of described charging tray of this downstream side pressure control chamber,
4th gate valve, is disposed between described downstream side pressure control chamber and described downstream side load lock;
Described pressure adjustmenting mechanism adjusts separately the pressure of described upstream side pressure adjustment room, described upstream side load lock, described downstream side pressure control chamber and described downstream side load lock.
3. vacuum film formation apparatus according to claim 2, it is characterized in that, described carrying mechanism carries described charging tray at described upstream side load lock, described upstream side pressure adjustment room, described downstream side pressure control chamber and described downstream side load lock intermittent, in described filming chamber, carry described charging tray continuously.
4. vacuum film formation apparatus according to any one of claim 1 to 3, is characterized in that, described carrying mechanism has and supports and the multiple transport rollers rotated described charging tray.
5. a vacuum film formation apparatus,
Have:
Filming chamber, carries out film forming process to substrate under a reduced pressure,
Upstream side pressure adjustment part, is disposed in the upstream side on the carrying direction of described substrate of described filming chamber,
Downstream side pressure adjustment unit, is disposed in the downstream side on the carrying direction of described substrate of described filming chamber,
First gate valve, is disposed between described upstream side pressure adjustment part and described filming chamber,
Second gate valve, is disposed between described filming chamber and described downstream side pressure adjustment unit,
Pressure adjustmenting mechanism, adjusts separately the pressure of described filming chamber, described upstream side pressure adjustment part and described downstream side pressure adjustment unit,
Carrying mechanism, is carried to described upstream side pressure adjustment part, described filming chamber, described downstream side pressure adjustment unit successively by described substrate;
The feature of this vacuum film formation apparatus is,
Described filming chamber comprises and carries out the film-forming region of film forming process to described substrate and be formed in the upstream side non-film-forming region of both sides and the downstream side non-film-forming region of this film-forming region,
Described carrying mechanism can control separately described substrate in described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the film-forming region of described filming chamber, transporting velocity in the downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, by make described substrate by the transporting velocity of described substrate during described film-forming region lower than described substrate by described upstream side pressure adjustment part, the upstream side non-film-forming region of described filming chamber, the transporting velocity of the described substrate when downstream side non-film-forming region of described filming chamber and described downstream side pressure adjustment unit, when described substrate passes through the film-forming region of described filming chamber, make described substrate with the state contacted with each other by described film-forming region.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014063156A JP2015185788A (en) | 2014-03-26 | 2014-03-26 | Vacuum deposition device |
| JP2014-063156 | 2014-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104947062A true CN104947062A (en) | 2015-09-30 |
Family
ID=54162115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510113153.1A Pending CN104947062A (en) | 2014-03-26 | 2015-03-16 | Vacuum film forming device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2015185788A (en) |
| KR (1) | KR20150111815A (en) |
| CN (1) | CN104947062A (en) |
| TW (1) | TWI577830B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234709A (en) * | 2017-07-10 | 2019-01-18 | 冯·阿登纳资产股份有限公司 | Enter the processing unit and method of substrate for lock |
| CN114574833A (en) * | 2020-11-30 | 2022-06-03 | 佳能特机株式会社 | Conveying device and film forming device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6524025B2 (en) * | 2016-06-06 | 2019-06-05 | 三菱電機株式会社 | Deposition apparatus and method of manufacturing solar cell |
| JP7242414B2 (en) * | 2019-05-08 | 2023-03-20 | 株式会社アルバック | Vacuum transfer device and film forming device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1804112A (en) * | 2006-01-20 | 2006-07-19 | 浙江大学 | Electronic ceramic continuous sputtering coating equipment |
| CN1865489A (en) * | 2006-01-06 | 2006-11-22 | 浙江大学 | Continuous coating device for patch inductance framework |
| CN101353782A (en) * | 2008-09-05 | 2009-01-28 | 郭爱云 | Large area anti-reflection conductive film continuous magnetron sputtering film coating production line |
| JP2010245478A (en) * | 2009-04-10 | 2010-10-28 | Sharp Corp | Plasma processing apparatus |
| JP2011144450A (en) * | 2009-12-16 | 2011-07-28 | Canon Anelva Corp | Sputtering apparatus and sputtering method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218721A (en) * | 1985-07-17 | 1987-01-27 | Fujitsu Ltd | Continuous processor |
| TWI257959B (en) * | 2005-01-20 | 2006-07-11 | Uvat Technology Co Ltd | Continuous vacuum film deposition machine with built-in electrostatic dust removal mechanism |
| JP5602005B2 (en) * | 2010-12-22 | 2014-10-08 | キヤノンアネルバ株式会社 | Vacuum processing apparatus and processing method using the same |
| JP2014034700A (en) * | 2012-08-08 | 2014-02-24 | Sumitomo Heavy Ind Ltd | Film deposition method |
-
2014
- 2014-03-26 JP JP2014063156A patent/JP2015185788A/en active Pending
- 2014-09-24 TW TW103132949A patent/TWI577830B/en not_active IP Right Cessation
- 2014-10-22 KR KR1020140143124A patent/KR20150111815A/en active Search and Examination
-
2015
- 2015-03-16 CN CN201510113153.1A patent/CN104947062A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865489A (en) * | 2006-01-06 | 2006-11-22 | 浙江大学 | Continuous coating device for patch inductance framework |
| CN1804112A (en) * | 2006-01-20 | 2006-07-19 | 浙江大学 | Electronic ceramic continuous sputtering coating equipment |
| CN101353782A (en) * | 2008-09-05 | 2009-01-28 | 郭爱云 | Large area anti-reflection conductive film continuous magnetron sputtering film coating production line |
| JP2010245478A (en) * | 2009-04-10 | 2010-10-28 | Sharp Corp | Plasma processing apparatus |
| JP2011144450A (en) * | 2009-12-16 | 2011-07-28 | Canon Anelva Corp | Sputtering apparatus and sputtering method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109234709A (en) * | 2017-07-10 | 2019-01-18 | 冯·阿登纳资产股份有限公司 | Enter the processing unit and method of substrate for lock |
| CN109234709B (en) * | 2017-07-10 | 2021-10-15 | 冯·阿登纳资产股份有限公司 | Processing apparatus and method for gating-in substrates |
| CN114574833A (en) * | 2020-11-30 | 2022-06-03 | 佳能特机株式会社 | Conveying device and film forming device |
| CN114574833B (en) * | 2020-11-30 | 2023-09-12 | 佳能特机株式会社 | Conveying device and film forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150111815A (en) | 2015-10-06 |
| TWI577830B (en) | 2017-04-11 |
| TW201536952A (en) | 2015-10-01 |
| JP2015185788A (en) | 2015-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7977255B1 (en) | Method and system for depositing a thin-film transistor | |
| CN106715750B (en) | Film build method and sputtering unit | |
| CN104947062A (en) | Vacuum film forming device | |
| JPWO2008149891A1 (en) | Deposition equipment | |
| CN1904132B (en) | Sputtering device and sputtering method | |
| TW201726956A (en) | Apparatus and system for vacuum deposition on a substrate and method for vacuum deposition on a substrate | |
| TW201402851A (en) | Method for sputtering for processes with a pre-stabilized plasma | |
| CN105097405A (en) | Plasma processing apparatus and exhaust structure applied to same | |
| JP5969856B2 (en) | Sputtering equipment | |
| US9011634B2 (en) | Plasma processing apparatus and plasma processing method | |
| KR20140118697A (en) | Film forming method | |
| CN101904227A (en) | Plasma source mechanism and film forming apparatus | |
| JP6309353B2 (en) | Sputtering apparatus and sputtering method | |
| TWI576946B (en) | Plasma cvd apparatus | |
| CN104576283B (en) | Gate-valve device and plasma processing apparatus | |
| CN1904133B (en) | Sputtering device and sputtering method | |
| JP2015056529A (en) | Film forming method and film forming device | |
| CN103811262A (en) | Inductive coupled plasma processing apparatus | |
| CN105088156A (en) | Magnetron sputtering apparatus | |
| CN102187007A (en) | Sputtering apparatus, thin film forming method and method for manufacturing field effect transistor | |
| WO2015166605A1 (en) | Deposition method | |
| JP2018154861A (en) | Sputtering apparatus | |
| JP2013001920A (en) | Sputtering apparatus, film-forming apparatus using the same and film-forming method | |
| KR100953741B1 (en) | Apparatus for forming thin film using ecr plasma | |
| JP2002129320A (en) | Method and apparatus for sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150930 |
|
| WD01 | Invention patent application deemed withdrawn after publication |