JP2015185788A - Vacuum deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition device capable of performing uniform deposition with respect to a substrate with high throughput.SOLUTION: Transportation speed of a tray T, when a substrate supported by the tray T passes a deposition area facing to deposition part P1 and P2, is slowed down rather than normal transportation speed of the tray T, thereby, when the tray T is passed through the deposition area in a deposition chamber CB3, the plurality of trays T is passed through the deposition area in a state where the plurality of trays T are adjacent to each other.

Description

  The present invention relates to a vacuum film forming apparatus that performs vacuum film formation such as sputtering or CVD while transporting a substrate.

  Vacuum film formation is performed on substrates such as glass substrates for organic EL display devices, glass substrates for liquid crystal display devices, panel substrates for solar cells, glass substrates for plasma displays, glass substrates for photomasks, substrates for optical disks, and semiconductor wafers. In some cases, a vacuum film forming apparatus that performs film formation on a substrate by continuously passing the substrate through the film formation chamber is used. Patent Document 1 includes an inlet chamber, a first sputtering chamber, an atmosphere separation unit, a second sputtering chamber, and an outlet chamber. The substrate is separated from the inlet chamber, the first sputtering chamber, and the atmosphere by a plurality of transfer rollers. A sputtering apparatus that performs sputtering on a substrate by passing through a section, a second sputtering chamber, and an outlet chamber is disclosed.

JP 2009-185350 A

  In such a vacuum film forming apparatus, for example, a tray supporting a plurality of substrates is used in order to efficiently form a film on a solar cell panel substrate or the like. Such a vacuum film forming apparatus includes, for example, a film forming chamber that forms a substrate in a reduced pressure state, and an upstream pressure adjusting unit that is disposed upstream of the film forming chamber in the tray transport direction. A downstream pressure adjusting unit disposed downstream of the film forming chamber in the tray conveyance direction, a gate valve disposed between the upstream pressure adjusting unit and the film forming chamber, A gate valve disposed between the chamber and the downstream pressure adjusting unit, a pressure adjusting mechanism for individually adjusting the pressures of the film forming chamber, the upstream pressure adjusting unit, and the downstream pressure adjusting unit, and the tray on the upstream side. A pressure adjusting unit, a film forming chamber, and a transfer mechanism that sequentially transfers to the downstream pressure adjusting unit.

  In such a vacuum film forming apparatus, the upstream pressure adjusting unit and the film forming chamber, or between the film forming chamber and the downstream pressure adjusting unit, the tray is transported after adjusting the pressure between each other. Therefore, it is necessary to convey the tray intermittently. When the trays are intermittently fed in this way, an interval is generated between the trays. For this reason, the throughput for vacuum film-forming will fall.

  In addition, when an interval is generated between the trays, the state of plasma during film formation changes and the film formation process becomes unstable, so that uniform film formation may not be possible. Further, when a gap is generated between the trays, the film forming components passing through the intervals between the trays are accumulated, and the film forming components are reattached to the substrate to reduce the yield, or the film forming chamber is cleaned. There arises a problem that the operating rate of the apparatus is lowered by shortening the interval.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a vacuum film forming apparatus capable of performing uniform film formation on a substrate with high throughput.

  According to the first aspect of the present invention, a tray that supports a plurality of substrates, a film formation chamber that forms a substrate under reduced pressure, and an upstream side of the film formation chamber in the transport direction of the tray are provided. An upstream pressure adjusting unit, a downstream pressure adjusting unit disposed downstream of the film forming chamber in the tray conveying direction, and between the upstream pressure adjusting unit and the film forming chamber. A gate valve disposed between the film forming chamber and the downstream pressure adjusting unit, the film forming chamber, the upstream pressure adjusting unit, and the downstream pressure adjusting unit. A vacuum film-forming apparatus comprising: a pressure-adjusting mechanism that individually adjusts the pressure; and a transport mechanism that sequentially transports the tray to the upstream-side pressure adjusting unit, the film-forming chamber, and the downstream-side pressure adjusting unit. The film formation chamber is a film formation region for performing film formation on the substrate supported by the tray. And an upstream non-film forming region and a non-film forming region on the downstream side formed on both sides of the film forming region, and the transport mechanism includes the upstream pressure adjusting unit and the non-film forming on the upstream side in the film forming chamber. The tray, the film forming region in the film forming chamber, the non-film forming region on the downstream side in the film forming chamber, and the transport speed of the tray in the downstream pressure adjusting unit can be individually controlled and supported by the tray Conveyance of the tray when the substrate passes through the upstream pressure adjusting unit, the upstream non-film forming region in the film forming chamber, the downstream non-film forming region in the film forming chamber, and the downstream pressure adjusting unit. When the tray passes through the film formation region in the film formation chamber, the tray is transported at a slower speed than the speed when the substrate supported by the tray passes through the film formation region. Adjacent to each other In wherein the passing the film formation region.

  According to a second aspect of the present invention, in the first aspect of the invention, the upstream pressure adjustment unit is disposed upstream of the film forming chamber in the tray conveyance direction. A chamber, an upstream load lock chamber disposed upstream of the upstream pressure adjustment chamber in the tray conveyance direction, and the upstream pressure lock chamber and the upstream load lock chamber. A downstream side pressure adjusting chamber disposed downstream of the film forming chamber in the transport direction of the tray, and the downstream side pressure adjusting unit. A downstream load lock chamber disposed on the downstream side of the tray in the conveying direction with respect to the side pressure adjustment chamber; and a gate valve disposed between the downstream pressure adjustment chamber and the downstream load lock chamber. And the pressure adjusting mechanism is Side pressure adjusting chamber, the upstream load lock chamber, to individually adjust the pressure of the downstream pressure adjusting chamber and the downstream load lock chamber.

  The invention according to claim 3 is the invention according to claim 2, wherein the transfer mechanism includes the upstream load lock chamber, the upstream pressure adjustment chamber, the downstream pressure adjustment chamber, and the downstream load lock chamber. The tray is transported intermittently, and the tray is transported continuously in the film forming chamber.

  According to a fourth aspect of the present invention, in the first aspect of the present invention, the transport mechanism includes a plurality of transport rollers that rotate while supporting the tray.

  The invention according to claim 5 is a film forming chamber for forming a substrate in a reduced pressure state, an upstream pressure adjusting unit disposed upstream of the film forming chamber in the transport direction of the substrate, A downstream pressure adjusting unit disposed on the downstream side in the substrate transport direction with respect to the film forming chamber; a gate valve disposed between the upstream pressure adjusting unit and the film forming chamber; A gate valve disposed between the film formation chamber and the downstream pressure adjustment unit, and pressure adjustment for individually adjusting the pressures of the film formation chamber, the upstream pressure adjustment unit, and the downstream pressure adjustment unit A vacuum film forming apparatus comprising: a mechanism; and a transport mechanism that sequentially transports the substrate to the upstream pressure adjusting unit, the film forming chamber, and the downstream pressure adjusting unit. A film formation region for performing film formation on the substrate, and an upstream side and a downstream side formed on both sides of the film formation region. The transport mechanism includes the upstream pressure adjusting unit, the upstream non-film formation region in the film formation chamber, the film formation region in the film formation chamber, and the downstream non-film formation region in the film formation chamber. The substrate conveyance speed in the film forming region and the downstream pressure adjusting unit can be individually controlled, and the substrate is the upstream pressure adjusting unit, the upstream non-film forming region in the film forming chamber, and the film forming By lowering the transport speed of the substrate when the substrate passes through the film formation region than the transport speed of the substrate when passing through the downstream non-film formation region and the downstream pressure adjustment unit in the chamber When the substrate passes through the film formation region in the film formation chamber, the substrate passes through the film formation region in a state of being adjacent to each other.

  According to the first to fourth aspects of the present invention, the film formation is performed while continuously transporting the substrate in the film formation region, so that the film formation can be executed with a high throughput. When the tray passes through the film formation region, the tray passes through the film formation region in a state where the trays are adjacent to each other, so that uniform film formation is performed while preventing deposition of film formation components between the trays. It becomes possible.

  According to the fourth aspect of the present invention, when the substrate is directly transferred without using the tray, the film formation is performed while the substrate is continuously transferred in the film formation region. Can be executed. When the substrate passes through the film formation region, the substrate passes through the film formation region in a state of being adjacent to each other, so that uniform film formation is performed while preventing deposition of film formation components between the substrates. It becomes possible.

It is a side surface schematic diagram of the vacuum film-forming apparatus concerning this invention. 1 is a schematic plan view of a vacuum film forming apparatus according to the present invention. The decompression state with respect to the tray T when the tray T passes through the upstream load lock chamber CB1, the upstream pressure adjustment chamber CB2, the film formation chamber CB3, the downstream pressure adjustment chamber CB4, and the downstream load lock chamber CB5 will be described. It is explanatory drawing. The tray T supporting the plurality of substrates S is moved by the plurality of transport rollers 11 to the upstream load lock chamber CB1, the upstream pressure adjustment chamber CB2, the film forming chamber CB3, the downstream pressure adjustment chamber CB4, and the downstream load lock chamber CB5. It is a perspective view which shows the state which is conveyed. It is a schematic diagram which shows the film-forming area | region F vicinity in film-forming chamber CB3. It is a schematic diagram which shows the film-forming part P1 (P2). It is a block diagram which shows the control system of the vacuum film-forming apparatus which concerns on this invention. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T. FIG. 6 is an explanatory diagram illustrating a transport control operation of the tray T.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic side view of a vacuum film forming apparatus according to the present invention, and FIG. 2 is a schematic plan view thereof.

  This vacuum film formation apparatus includes an introduction conveyor CV1, an upstream load lock chamber CB1, an upstream pressure adjustment chamber CB2, a film formation chamber CB3, a downstream pressure adjustment chamber CB4, a downstream load lock chamber CB5, Dispensing conveyor CV2. In FIGS. 1 and 2, the first tray T1 supporting a plurality of solar cell panel substrates (hereinafter simply referred to as “substrates”) is simply referred to as “tray T” when collectively referred to as a plurality of trays. A state in the upstream load lock chamber CB1 is shown. The tray T supports the introduction conveyor CV1, the upstream load lock chamber CB1, the upstream pressure adjustment chamber CB2, the film formation chamber CB3, the downstream pressure by the action of a plurality of conveying rollers 11 that support and rotate the tray T from below. The adjustment chamber CB4, the downstream side load lock chamber CB5, and the payout conveyor CV2 are sequentially conveyed.

  As shown in FIG. 1, a gate valve G1 is disposed between the introduction conveyor CV1 and the upstream load lock chamber CB1. A gate valve G2 is disposed between the upstream load lock chamber CB1 and the upstream pressure adjustment chamber CB2. A gate valve G3 is disposed between the upstream pressure adjustment chamber CB2 and the film formation chamber CB3. A gate valve G4 is disposed between the film formation chamber CB3 and the downstream pressure adjustment chamber CB4. A gate valve G5 is disposed between the downstream pressure adjustment chamber CB4 and the downstream load lock chamber CB5. Further, a gate valve G6 is disposed between the downstream side load lock chamber CB5 and the payout conveyor CV2. These gate valves G 1, G 2, G 3, G 4, G 5, G 6 are opened only when the tray T is passed by the action of a gate valve opening / closing part 90 described later.

  The upstream load lock chamber CB1 carries in the tray T, which has been conveyed by the introduction conveyor CV1 from the previous processing step, under atmospheric pressure, and the interior of the chamber is shortened by the action of the vacuum pump VP1 connected via the vacuum valve V1. The pressure is close to the set vacuum pressure at the time of film formation. In this upstream side load lock chamber CB1, a vacuum pressure gauge VG1 for measuring the vacuum pressure in the chamber is disposed.

  The upstream side pressure adjustment chamber CB2 is used for carrying the tray T from the upstream side load lock chamber CB1 and setting the chamber to a set pressure during film formation. In the upstream side pressure adjustment chamber CB2, first, the control valve SV1 connected to the vacuum pump VP2 is fully opened to bring the chamber to a set pressure or less during film formation in a short time, and then the pressure is adjusted by the control valve SV1. The chamber is made to coincide with the set pressure during film formation. In the upstream pressure adjustment chamber CB2, a vacuum pressure gauge VG2 for measuring the vacuum pressure in the chamber is disposed. In addition, you may utilize this upstream side pressure regulation chamber CB2 as a heating chamber of the board | substrate supported by the tray T. FIG.

  The film formation chamber CB3 carries in the tray T from the upstream pressure adjustment chamber CB2 and performs film formation at a set pressure at the time of film formation. In the film forming chamber CB3, the inside of the chamber is always matched with the set pressure at the time of film formation by the action of the control valve SV2 connected to the vacuum pump VP3. In the film forming chamber CB3, a vacuum pressure gauge VG3 for measuring the vacuum pressure in the chamber is disposed. The film forming chamber CB3 is provided with a pair of film forming parts P1 and P2 to be described later.

  The downstream pressure adjustment chamber CB4 is for carrying the tray T from the film forming chamber CB3 and carrying it out to the downstream load lock chamber CB5. The downstream pressure adjustment chamber CB4 has a configuration in which the chamber is set to a predetermined vacuum pressure by the action of the control valve SV3 connected to the vacuum pump VP4. In the downstream pressure adjustment chamber CB4, a vacuum pressure gauge VG4 for measuring the vacuum pressure in the chamber is disposed. The downstream pressure adjustment chamber CB4 may be used as a cooling chamber for the substrate supported by the tray T.

  The downstream side load lock chamber CB5 is for carrying in the tray T from the downstream side pressure regulating chamber CB4 and carrying it out of the apparatus. The downstream side load lock chamber CB5 has a configuration in which the chamber is set to a predetermined vacuum pressure by the action of the vacuum pump VP5 connected through the vacuum valve V2. The downstream side load lock chamber CB5 is provided with a vacuum pressure gauge VG5 for measuring the vacuum pressure in the chamber.

  FIG. 3 shows the pressure reduction with respect to the tray T when the tray T passes through the upstream load lock chamber CB1, the upstream pressure adjustment chamber CB2, the film formation chamber CB3, the downstream pressure adjustment chamber CB4, and the downstream load lock chamber CB5. It is explanatory drawing explaining a state. In FIG. 3, A is an atmospheric pressure state, E is a pressure adjustment state, V is a set pressure during film formation, and V0 is a pressure close to the set pressure. Each state is shown.

  When the tray T is carried into the upstream load lock chamber CB1 from the introduction conveyor CV1, the upstream load lock chamber CB1 is at atmospheric pressure A. From this state, the pressure in the room is set to a pressure V0 close to the set pressure in a short time by the action of the vacuum pump VP1 connected via the vacuum valve V1. At this time, the upstream pressure adjustment chamber CB2 is set to the set pressure V during film formation by adjusting the pressure with the control valve SV1. In this state, the gate valve G2 is opened, and the tray T is transferred from the upstream load lock chamber CB1 to the upstream pressure adjustment chamber CB2. In the upstream pressure adjustment chamber CB2, pressure fluctuation due to the opening of the gate valve G2 is adjusted by the control valve SV1.

  When the pressure in the upstream pressure adjustment chamber CB2 becomes the set pressure V during film formation, the gate valve G3 is opened, and the tray T is transferred from the upstream pressure adjustment chamber CB2 to the film formation chamber CB3. At this time, since the pressure in the upstream pressure adjustment chamber CB2 is the set pressure V during film formation, the pressure in the film formation chamber CN3 does not vary. Under this set pressure V, film formation is performed on the substrate supported by the tray T.

  When film formation on the substrate supported by the tray T is completed, the gate valve G4 is opened, and the tray T is transferred from the film formation chamber CB3 to the downstream pressure adjustment chamber CB4. At this time, due to the action of the control valve SV3, the pressure in the downstream pressure adjustment chamber CB4 is the set pressure V during film formation, so the pressure in the film formation chamber CB3 does not fluctuate.

  Next, the gate valve G5 is opened, and the tray T is transferred from the downstream pressure adjustment chamber CB4 to the downstream load lock chamber CB5. At this time, the pressure in the downstream side load lock chamber CB5 is set to a pressure V0 close to the set pressure in advance by the action of the vacuum pump VP5 connected via the vacuum valve V2. When the tray T moves to the downstream side load lock chamber CB5, the gate valve G5 is closed, and the pressure in the downstream side pressure adjustment chamber CB4 is returned to the set pressure V during film formation by the action of the control valve SV3.

  Then, the gate valve G6 is opened, and the tray T is conveyed from the downstream side load lock chamber CB5 to the discharge conveyor CV2. If the tray T moves to the delivery conveyor CV2, the gate valve G6 is closed, and the pressure V0 close to the set vacuum pressure is set in the room in a short time by the action of the vacuum pump VP5 connected via the vacuum valve V2.

  4 shows that a tray T supporting a plurality of substrates S is moved by an upstream load lock chamber CB1, an upstream pressure adjustment chamber CB2, a film formation chamber CB3, a downstream pressure adjustment chamber CB4, and a downstream side by a plurality of transport rollers 11. It is a perspective view which shows the state conveyed in load lock room CB5.

  Nine openings are formed in the rectangular tray T, and the rectangular substrates S are supported by the claw members 13 in these openings. The tray T is supported by a plurality of transport rollers 11. Each of these transport rollers 11 has a configuration in which a collar portion is formed, and each of the transport rollers 11 is supported by a pair of side plates 12. The tray T is conveyed by the plurality of conveyance rollers 11 as the plurality of conveyance rollers 11 rotate in synchronization.

  As shown in FIG. 2, the transport roller 11 in the introduction conveyor CV1 rotates by receiving the drive of the motor M1, and the transport roller 11 in the upstream load lock chamber CB1 rotates by receiving the drive of the motor M2, thereby adjusting the upstream pressure. The conveyance roller 11 in the chamber CB2 rotates by receiving the drive of the motor M3, and the conveyance roller 11 in the non-deposition region upstream of the film formation region to be described later of the film formation chamber CB3 rotates by receiving the drive of the motor M4. The conveyance roller 11 in the film formation region of the chamber CB3 rotates by receiving the drive of the motor M5, and the conveyance roller 11 in the non-film formation region downstream of the film formation region of the film formation chamber CB3 rotates by receiving the drive of the motor M6. The conveyance roller 11 in the downstream pressure adjustment chamber CB4 rotates by receiving the drive of the motor M7, and the conveyance roller 11 in the downstream load lock chamber CB5 is rotated by the motor M8. Dynamic rotates receiving the conveying roller 11 in the dispensing conveyor CV2 rotates receiving the drive motor M9.

  Therefore, by controlling the rotation of these motors M1, M2, M3, M4, M5, M6, M7, M8, and M9, the tray T can be intermittently or continuously at different speeds in each region. In addition, it can be transported at a predetermined speed.

  Next, the configuration of the pair of film forming units P1 and P2 described above will be described. FIG. 5 is a schematic diagram showing the vicinity of the film formation region F in the film formation chamber CB3.

  In the film forming chamber CB3, a pair of film forming portions P1 and P2 are disposed. These film forming units P1 and P2 perform film formation on the plurality of substrates S supported by the tray T conveyed by the action of the conveying roller 11 from the lower surface thereof. Note that a region extending from the upstream end of the film forming unit P1 to the downstream end of the film forming unit P2 in the film forming chamber CB3 is a film forming region F, and the other regions in the film forming chamber CB3 are not formed. It becomes an area.

  FIG. 6 is a schematic diagram showing the film forming part P1 (P2).

  The film forming unit P1 includes a target 21, a base plate 22 constituting a cathode, a sputtering power source 29, a magnet 24, an anode 23, and an inductively coupled plasma generating unit 32. The film forming unit P1 includes a cooling mechanism (not shown) for cooling the target 21, the base plate 22, the inductively coupled antenna 25 of the inductively coupled plasma generating unit 32, and the like.

  Here, the material of the target 21 is aluminum (Al). The target 21 is held in a horizontal posture at a position separated from the transport path of the tray T by a predetermined distance while being insulated from the film forming chamber CB3 by a holding unit (not shown). As a result, the target 21 is disposed so as to face the substrate S supported by the tray T in a parallel state.

  The base plate 22 is brought into contact with the target 21 from below the target 21. Further, the sputtering power source 29 applies a sputtering voltage to the base plate 22. Here, the sputtering voltage may be, for example, a negative DC voltage, a pulsed voltage composed of a negative voltage and a positive voltage, or an AC sputtering voltage to which a negative bias voltage is added. It may be. When a sputtering voltage is applied to the target 21 via the base plate 22, an electric field is generated, and plasma is generated by this electric field.

  The magnet 24 is disposed below the base plate 22. The magnet 24 is a magnetron sputtering magnet, and is formed of a permanent magnet, for example, and forms a static magnetic field (magnetron magnetic field) near the surface of the target 21. By forming this static magnetic field, the plasma generated by the electric field is confined near the surface of the target 21. The anode 23 is disposed on the side of the base plate 22. The upper side of the anode 23 is disposed close to the side surface of the target 21 in a non-contact state.

  The inductively coupled plasma generating unit 32 includes two inductively coupled antennas 25 which are inductively coupled high frequency antennas. Each inductively coupled antenna 25 is obtained by bending a metal pipe-shaped conductor into a U shape with a dielectric such as quartz. A pair of the inductively coupled antennas 25 are arranged on the upstream side and the downstream side of the target 21 with respect to the transport direction of the tray T. Each inductively coupled antenna 25 is disposed along the side surface of the target 21. Further, the height positions of the inductively coupled antenna 25 and the target 21 are adjusted so that the vicinity of the protruding end of each inductively coupled antenna 25 is disposed on the side of the upper surface of the target 21. These inductively coupled antennas 25 are fixed in the film forming chamber CB3 while being insulated from the film forming chamber CB3.

  One end of each inductively coupled antenna 25 is connected to a high frequency power source 31 via a matching circuit 30. The other end of each inductively coupled antenna 25 is grounded. When a high frequency current flows from the high frequency power supply 31 to each inductively coupled antenna 25, electrons are accelerated by an electric field (high frequency induced electric field) around the inductively coupled antenna 25, and inductively coupled plasma is generated. The plasma is confined to the surface portion of the target 21 by the static magnetic field formed by the magnet 24 in the vicinity of the target 21 together with the plasma generated by the electric field described above.

  As described above, the inductively coupled antenna 25 has a U shape. Such a U-shaped inductively coupled antenna 25 corresponds to an inductively coupled antenna having less than one turn, and has an inductance lower than that of an inductively coupled antenna having one or more turns. The high frequency voltage generated in the plasma is reduced, and the high frequency fluctuation of the plasma potential accompanying the electrostatic coupling to the generated plasma is suppressed. For this reason, excessive electron loss accompanying the plasma potential fluctuation to the ground potential is reduced, and the plasma potential can be suppressed particularly low.

  Further, a discharge port 28 is formed between each inductively coupled antenna 25 and the target 21, and this discharge port 28 is connected to a gas supply unit (not shown). The gas supplied from the gas supply unit to the discharge port 28 is supplied to the processing space in which the film forming unit P1 is disposed. These discharge ports 28 are preferably provided at positions corresponding to the two inductively coupled antennas 25.

  In addition, a pair of shielding plates 26 are disposed outside the two inductively coupled antennas 25. These shielding plates 26 function as shields that limit the scattering range of plasma and sputtering generated in the film forming part P1.

  In such a film forming portion P1, argon as a sputtering gas and oxygen as a reactive gas are supplied from the discharge port 28 to the region between the pair of shielding plates 26. A high-frequency current is supplied from the high-frequency power source 31 to the inductively coupled antenna 25 and a sputtering voltage is applied from the sputtering power source 29 to the base plate 22. Then, inductively coupled plasma is generated by the high frequency induction electric field around the inductively coupled antenna 25. Further, when a sputtering voltage is applied to the base plate 22, high-density plasma is generated near the target 21. These two types of plasma are confined to the surface portion of the target 21 by a static magnetic field formed by the magnet 24 in the vicinity of the target 21. Then, ions in the plasma atmosphere collide with the target 21, and aluminum (Al) atoms are ejected from the target 21. With the aluminum atoms, an aluminum layer is formed on the lower surface of the substrate S to form a film.

  FIG. 7 is a block diagram showing a control system of the vacuum film forming apparatus according to the present invention.

  The vacuum film forming apparatus includes a ROM that stores an operation program necessary for controlling the apparatus, a RAM that temporarily stores data and the like during control, and a CPU that executes logical operations, and controls the entire apparatus. 100. The control unit 100 is connected to the motors M1, M2, M3, M4, M5, M6, M7, M8, and M9 described above, and these motors M1, M2, M3, M4, M5, M6, M7, and M8. , M9 is controlled. The control unit 100 is connected to the vacuum pressure gauges VG1, VG2, VG3, VG4, and VG5 described above. The control unit 100 is connected to the above-described vacuum valves V1, V2 and control valves SV1, SV2, SV3. Further, the control unit 100 is connected to a gate valve opening / closing unit 90 for opening and closing the gate valves G1, G2, G3, G4, G5, G6 described above, and the gate valve is opened via the gate valve opening / closing unit 90. G1, G2, G3, G4, G5, and G6 are controlled to open and close.

  Next, the conveyance control operation of the tray T by the vacuum film forming apparatus described above will be described. 8 to 23 are explanatory views showing the transport control operation of the tray T. FIG. 8, 10, 12, 14, 16, 18, 20, and 22 show side surfaces of the vacuum film forming apparatus, and FIGS. 9, 11, 13, 15, 17, and 17. 19, 21 and 23 show the plane of the vacuum film forming apparatus. These drawings correspond to FIGS. 1 and 2 described above, but some reference numerals shown in FIGS. 1 and 2 are omitted.

  As shown in FIGS. 1 and 2, the first tray T1 supporting the plurality of substrates S is transported from the introduction conveyor CV1 to the upstream load lock chamber CB1. The transport speed of the tray T1 at this time is a transport speed S2 that is faster than the transport speed S1 during film formation. As shown in FIGS. 1 and 2, the tray T1 is temporarily stopped in the upstream load lock chamber CB1, and the pressure in the upstream load lock chamber CB1 is adjusted.

  Next, as shown in FIGS. 8 and 9, the tray T1 is transferred from the upstream load lock chamber CB1 to the upstream pressure adjustment chamber CB2. The transport speed of the tray T1 at this time is also a transport speed S2 that is faster than the transport speed S1 during film formation. As shown in FIGS. 8 and 9, the tray T1 is temporarily stopped in the upstream pressure adjustment chamber CB2, and the pressure in the upstream pressure adjustment chamber CB2 is adjusted.

  Next, as shown in FIGS. 10 and 11, the tray T1 is transferred from the upstream pressure adjustment chamber CB2 to the film formation chamber CB3. Specifically, at the time of transport, the front end of the substrate S supported by the tray T1 (that is, among the plurality of substrates S supported by the tray T1, the top end in the transport direction of the top substrate S in the transport direction) Until the film formation region F shown in FIG. 5 is reached, the tray T1 is transported at a transport speed S2, which is faster than the transport speed S1 during film formation. On the other hand, after the front end of the substrate S supported by the tray T1 reaches the film formation region F, the rear end of the substrate S supported by the tray T1 (that is, among the plurality of substrates S supported by the tray T1) The tray T1 is transported at the transport speed S1 during film formation until the rear end in the transport direction of the last substrate S in the direction is separated from the film formation region F. That is, the tray T1 is transported at the transport speed S1 during film formation when the substrate S supported by the tray T1 passes through the film formation region F in the film formation chamber CB3.

  Further, as shown in FIGS. 10 and 11, the next tray T2 is conveyed from the introduction conveyor CV1 to the upstream load lock chamber CB1.

  As shown in FIGS. 12 and 13, while the first tray T1 is transported through the film formation region F in the film formation chamber CB3 at a low film formation speed S1, the following processing is performed. The tray T2 is conveyed from the upstream load lock chamber CB1 to the upstream pressure adjustment chamber CB2, and the next tray T3 is further conveyed from the introduction conveyor CV1 to the upstream load lock chamber CB1. These trays T2 and T3 are intermittently transported similarly to the tray T1, and the transport speed is the transport speed S2, which is faster than the transport speed S1 during film formation, similarly to the tray T1.

  While the first tray T1 is being transported through the deposition region F in the deposition chamber CB3 at the slow deposition rate S1, the next tray T2 is in the upstream pressure regulation chamber. The film is transferred from CB2 to the film forming chamber CB3. The transport speed of the tray T2 at this time is the transport speed S2 that is faster than the transport speed S1 during film formation, as described above. Therefore, as shown in FIGS. 14 and 15, the first tray T1 and the next tray T2 come into contact with each other in the film forming chamber CB3. This contact position is the position of the tray T1 and the tray T2 when the tip of the substrate S supported by the tray T2 reaches the film formation region F. After the contact, the transport speed of the tray T2 becomes the transport speed S1 during film formation. Thereby, the tray T1 and the tray T2 pass through the film formation region F in a state of being adjacent to each other. At this time, the next tray T3 is further conveyed from the introduction conveyor CV1 to the upstream side load lock chamber CB1.

  As shown in FIGS. 16 and 17, while the tray T <b> 1 and the tray T <b> 2 are adjacent to each other and pass through the film formation region F at the conveyance speed S <b> 1 during film formation, The load is transferred from the load lock chamber CB1 to the upstream pressure adjustment chamber CB2, and the next tray T4 is further transferred from the introduction conveyor CV1 to the upstream load lock chamber CB1. The conveyance of the trays T3 and T4 at this time is intermittent as in the case of the trays T1 and T2, and the conveyance speed at this time is a conveyance speed S2 that is faster than the conveyance speed S1 during film formation. ing.

  While the tray T1 and the tray T2 are adjacent to each other, the next tray T3 is being transported through the film forming region F in the film forming chamber CB3 at the transport speed S1 during the low-speed film forming and the film forming process is being performed. Is transferred from the upstream pressure regulating chamber CB2 to the film forming chamber CB3. The transport speed of the tray T3 at this time is a transport speed S2 that is faster than the transport speed S1 during film formation. For this reason, as shown in FIGS. 18 and 19, in the film forming chamber CB3, the next tray T3 comes into contact with the tray T2 out of the tray T1 and the tray T2 that are transported adjacent to each other. This contact position is the position of the tray T2 and the tray T3 when the tip of the substrate S supported by the tray T3 reaches the film formation region F. After the contact, the transport speed of the tray T3 becomes the transport speed S1 during film formation. Accordingly, the tray T1 and the tray T2, and the tray T2 and the tray T3 pass through the film formation region F in a state of being adjacent to each other. At this time, the next tray T4 is further conveyed from the introduction conveyor CV1 to the upstream side load lock chamber CB1.

  If the rear end of the substrate S supported by the first tray T1 is separated from the film formation region F in the film formation chamber CB3, the transfer speed of the tray T1 is higher than the transfer speed S1 during film formation. Can be switched to. Therefore, the transport speed of the tray T2 and the tray T3 when the substrate S supported by the tray T2 and the tray T3 passes through the film formation region F is the transport speed S1 during film formation. Therefore, as shown in FIGS. 20 and 21, the tray T1, the tray T2, and the tray T3 are released from the adjacent state, and the tray T1 is separated from the tray T2 and the tray T3. The tray T1 is transferred from the film formation chamber CB3 to the downstream pressure adjustment chamber CB4 at a transfer speed S2 that is faster than the transfer speed S1 during film formation. Thereafter, the conveyance of the tray T1 is temporarily stopped in the downstream pressure adjustment chamber CB4, and the pressure in the downstream pressure adjustment chamber CB4 is adjusted. Also at this time, the subsequent tray T2 and tray T3 are transported at the transport speed S1 during film formation, and film formation on the substrate S supported by the two trays is continued.

  Next, as shown in FIGS. 22 and 23, the tray T1 is transported from the downstream pressure adjustment chamber CB4 to the downstream load lock chamber CB5. Thereafter, the conveyance is temporarily stopped in the downstream side load lock chamber CB5, and the pressure in the downstream side load lock chamber CB5 is adjusted (released to the atmosphere). The transport speed of the tray T1 from the downstream pressure adjustment chamber CB4 to the downstream load lock chamber CB5 is a transport speed S2 that is faster than the transport speed S1 during film formation. Further, in synchronization with the conveyance of the tray T1 from the downstream pressure adjustment chamber CB4 to the downstream load lock chamber CB5, the tray T4 is conveyed from the upstream load lock chamber CB1 to the upstream pressure adjustment chamber CB2, and further to the next tray. T5 is conveyed from the introduction conveyor CV1 to the upstream side load lock chamber CB1. The transport speed of the tray T4 and the tray T5 is a transport speed S2 that is faster than the transport speed S1 during film formation, and the transport is intermittently performed as in the preceding tray T.

  Thereafter, the first tray T1 is conveyed from the downstream side load lock chamber CB5 to the delivery conveyor CV2. Thereby, the film-forming process of the several board | substrate S supported by tray T1 is completed. Thereafter, the film forming process of the plurality of substrates S supported by the subsequent tray T is performed by the same operation.

  Next, another embodiment of the present invention will be described. In the above-described embodiment, the configuration in which the tray T supporting the plurality of substrates S is transported by the transport roller 11 is employed. However, as another embodiment, instead of supporting the substrate S by the tray T, the substrate S It is possible to adopt a configuration in which the sheet is directly supported by the conveyance roller and conveyed. Even when such a configuration is adopted, the substrate S is transported at the transport speed S1 during film formation while passing through the film formation region F, and is transported at a transport speed S2 faster than that at other times. By doing so, when the substrate S passes through the film formation region F, a plurality of substrates S are allowed to pass through the film formation region F so that the same operations and effects as in the above-described embodiment can be obtained. It becomes possible. In such an embodiment, the substrate S itself is transported by the plurality of transport rollers 11 instead of the tray T illustrated in each of the above-described drawings.

  In the above-described embodiment, the upstream load lock chamber CB1 and the upstream pressure adjustment chamber CB2 constitute an upstream pressure adjustment unit on the upstream side of the film forming chamber CB3, and the downstream load lock chamber CB4 and the downstream side. The pressure adjusting chamber CB5 constitutes a downstream pressure adjusting unit on the downstream side of the film forming chamber CB3. However, each of the upstream pressure adjusting unit and the downstream pressure adjusting unit may be configured as a single chamber.

DESCRIPTION OF SYMBOLS 11 Conveyance roller 12 Side plate 13 Claw member 21 Target 22 Base plate 23 Anode 24 Magnet 25 Inductive coupling type antenna 29 Sputtering power source 32 Inductive coupling type plasma generation unit 90 Gate valve opening / closing unit 100 Control unit CB1 Upstream load lock chamber CB2 Upstream side Pressure adjusting chamber CB3 Film forming chamber CB4 Downstream pressure adjusting chamber CB5 Downstream load lock chamber CV1 Inlet conveyor CV2 Discharge conveyor F Film forming region G1 to G6 Gate valve M1 to M9 Motor P1 Film forming unit P2 Film forming unit S Substrate SV1 Control Valve SV2 Control valve SV3 Control valve T Tray V1 Vacuum valve V2 Vacuum valve VG1 to VG5 Vacuum pressure gauge VP1 to VP5 Vacuum pump

Claims (5)

A tray that supports a plurality of substrates, a film forming chamber that forms a substrate in a reduced pressure state, an upstream pressure adjusting unit that is disposed upstream of the film forming chamber in the transport direction of the tray, A downstream pressure adjusting portion disposed downstream of the film forming chamber in the transport direction of the tray, a gate valve disposed between the upstream pressure adjusting portion and the film forming chamber, A gate valve disposed between the film formation chamber and the downstream pressure adjustment unit, and pressure adjustment for individually adjusting the pressures of the film formation chamber, the upstream pressure adjustment unit, and the downstream pressure adjustment unit A vacuum film forming apparatus comprising: a mechanism; and a transport mechanism that sequentially transports the tray to the upstream pressure adjusting unit, the film forming chamber, and the downstream pressure adjusting unit,
The film formation chamber includes a film formation region for performing film formation on the substrate supported by the tray, and upstream and downstream non-film formation regions formed on both sides of the film formation region. ,
The transport mechanism includes the upstream pressure adjusting unit, the upstream non-film forming region in the film forming chamber, the film forming region in the film forming chamber, the non-film forming region on the downstream side in the film forming chamber, and the downstream side. The conveyance speed of the tray in the pressure adjusting unit can be individually controlled, and the substrate supported by the tray is in the upstream pressure adjusting unit, the upstream non-film forming region in the film forming chamber, and the film forming chamber. The tray conveyance speed when the substrate supported by the tray passes through the film formation area is slower than the conveyance speed of the tray when passing through the downstream non-film formation area and the downstream pressure adjustment unit. Thus, when the tray passes through the film forming region in the film forming chamber, the vacuum film forming apparatus is configured to pass the tray through the film forming region in a state adjacent to each other. In the vacuum film-forming apparatus according to claim 1,
The upstream-side pressure adjustment unit includes an upstream-side pressure adjustment chamber disposed on the upstream side in the tray conveyance direction with respect to the film formation chamber, and an upstream-side pressure adjustment chamber in the tray conveyance direction. An upstream load lock chamber disposed on the upstream side, and a gate valve disposed between the upstream pressure adjustment chamber and the upstream load lock chamber, and
The downstream-side pressure adjustment unit includes a downstream-side pressure adjustment chamber disposed on the downstream side in the tray conveyance direction with respect to the film formation chamber, and the tray-side conveyance direction with respect to the downstream-side pressure adjustment chamber. A downstream load lock chamber disposed on the downstream side, and a gate valve disposed between the downstream pressure adjustment chamber and the downstream load lock chamber,
The vacuum film forming apparatus, wherein the pressure adjustment mechanism individually adjusts pressures in the upstream pressure adjustment chamber, the upstream load lock chamber, the downstream pressure adjustment chamber, and the downstream load lock chamber. The vacuum film forming apparatus according to claim 2,
The transport mechanism intermittently transports the tray in the upstream load lock chamber, the upstream pressure adjustment chamber, the downstream pressure adjustment chamber, and the downstream load lock chamber, and in the film formation chamber, Vacuum film forming equipment that continuously conveys trays. In the vacuum film-forming apparatus in any one of Claims 1-3,
The vacuum film forming apparatus, wherein the transport mechanism includes a plurality of transport rollers that support and rotate the tray. A film forming chamber for forming a film on the substrate in a reduced pressure state, an upstream pressure adjusting unit disposed on the upstream side in the transport direction of the substrate with respect to the film forming chamber, and the substrate with respect to the film forming chamber A downstream pressure adjusting unit disposed downstream of the conveying direction, a gate valve disposed between the upstream pressure adjusting unit and the film forming chamber, the film forming chamber and the downstream pressure A gate valve arranged between the adjustment unit, a pressure adjustment mechanism for individually adjusting the pressures of the film formation chamber, the upstream pressure adjustment unit, and the downstream pressure adjustment unit, and the substrate on the upstream side A vacuum film forming apparatus comprising a pressure adjusting unit, the film forming chamber, and a transfer mechanism that sequentially transfers to the downstream pressure adjusting unit,
The film formation chamber includes a film formation region for performing film formation on the substrate, and an upstream side and a downstream non-film formation region formed on both sides of the film formation region,
The transport mechanism includes the upstream pressure adjusting unit, the upstream non-film forming region in the film forming chamber, the film forming region in the film forming chamber, the non-film forming region on the downstream side in the film forming chamber, and the downstream side. The substrate conveyance speed in the pressure adjustment unit can be individually controlled, and the substrate can be individually controlled in the upstream pressure adjustment unit, the upstream non-deposition region in the film formation chamber, and the downstream non-deposition region in the film formation chamber. The substrate is formed by reducing the substrate transfer speed when the substrate passes through the film formation region from the substrate transfer speed when passing through the film region and the downstream pressure adjusting unit. A vacuum film forming apparatus, wherein when passing through a film forming region in a chamber, the substrate passes through the film forming region in a state of being adjacent to each other.

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