CN101904227A - Plasma source mechanism and film forming apparatus - Google Patents
Plasma source mechanism and film forming apparatus Download PDFInfo
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- CN101904227A CN101904227A CN2008801225931A CN200880122593A CN101904227A CN 101904227 A CN101904227 A CN 101904227A CN 2008801225931 A CN2008801225931 A CN 2008801225931A CN 200880122593 A CN200880122593 A CN 200880122593A CN 101904227 A CN101904227 A CN 101904227A
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- vacuum tank
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Abstract
Provided is a plasma processing technology which makes it possible to generate plasma of a large area with excellent repeatability, is applicable to various purposes and uses a low-cost plasma source. Specifically, a plasma source mechanism (1) is applicable to a vacuum apparatus (21) having a vacuum chamber (20), and the plasma source mechanism is provided with an antenna section (12), which is disposed outside a vacuum tank (20) through a dielectric section (10) and permits high frequency power to be applied; and a magnet section (11) which is disposed in the vicinity of the antenna section (12) outside the vacuum chamber (20) through the dielectric section (10) and has a rectangular shape that corresponds to the antenna section (12). In the antenna section (12), first and second antenna coils (14, 15) are adjacently disposed, and the first and the second antenna coils (14, 15) are connected in parallel to each other.
Description
Technical field
Plasma source that the present invention relates to be used for using plasma in a vacuum and film is handled and the film technique of using this plasma source.
Background technology
All the time, know ICP (the inductance coupling high type plasma) discharge of using coil very early, and proposed the ICP (for example, the referenced patent file 1,2) of different shape
In recent years, though wish large area region is carried out the ICP discharge,, in order to ensure large-area ICP discharge, sometimes the L of antenna (inductance) composition becomes excessive and can't obtain coupling and can't apply electric power.
In order to tackle this problem, all the time, the method that increases as area with ICP discharge, or make coil be shaped as complicated formation reducing the L composition, or carry out correspondence by the value that reduces the High frequency power that is applied.
As a result, in the prior art, exist the low inferior problem of reproducibility of plasma discharge, in addition, also exist as plasma source and the limited problem of purposes.
Patent document 1: Japanese kokai publication hei 2005-256024 communique
Patent document 2: No. 3188353 communique of Japan Patent
Summary of the invention
The present invention, propose in order to solve above-mentioned prior art problems, its purpose is, provides a kind of use reproducibility to generate large-area plasma well, can be applicable to the plasma treatment technology and the film technique of the plasma source of the cheapness of purposes widely thus.
The present invention who proposes in order to reach above-mentioned purpose, it is the plasma source mechanism that can be applicable to vacuum plant with vacuum tank, antenna part and magnetite portion with ring-type, the antenna part of ring-type is configured in the outside of above-mentioned vacuum tank via dielectric portion, have the antenna body portion of linearity and can apply High frequency power, magnetite portion the outside of above-mentioned vacuum tank be configured in via above-mentioned dielectric portion above-mentioned antenna part near, have and the corresponding shape of above-mentioned antenna part, wherein, the a plurality of aerial coils of above-mentioned antenna part in abutting connection with and near configuration, and this each aerial coil is connected in parallel.
The present invention is that in foregoing invention, above-mentioned antenna part and magnetite portion form rectangular-shaped.
The present invention is that in foregoing invention, each aerial coil of above-mentioned antenna part is reeled by 1 circle and constituted.
In addition, the present invention is a kind of film formation device, possesses vacuum tank and is arranged on the film deposition source of the inside of above-mentioned vacuum tank, in the outside of above-mentioned vacuum tank, is provided with the plasma source mechanism of above-mentioned any.
In addition, the present invention is a kind of film formation device, possesses vacuum tank, become diaphragm area, plasma treatment zone and rotary support mechanism, become diaphragm area to be arranged in the above-mentioned vacuum tank, and be used on the film forming object, forming multilayer film by magnetron sputtering, the plasma treatment zone is arranged in the above-mentioned vacuum tank, and the plasma source mechanism by above-mentioned any and the film on the above-mentioned film forming object is carried out plasma treatment, rotary support mechanism is arranged in the above-mentioned vacuum tank, can under the state that supports above-mentioned film forming object, be rotated, constitute, be accompanied by this rotation, this film forming object constitutes by above-mentioned a plurality of one-tenth diaphragm areas and above-mentioned plasma treatment zone, in above-mentioned vacuum tank, make on one side above-mentioned rotary support mechanism rotation, in above-mentioned film forming location on above-mentioned film forming object form the film of regulation on one side, and, in above-mentioned plasma treatment zone, this film on this film forming object is carried out plasma treatment.
Under the situation of plasma source mechanism of the present invention, since a plurality of aerial coils of for example rectangular ring of the antenna body portion with linearity of antenna part in abutting connection with and near configuration, thereby, compared with prior art, can reduce the L composition of antenna part, as a result, even the High frequency power of the frequency of normally used 13.56MHz also can generate large-area ICP discharge reliably.
So, according to the present invention, can be applicable to the various vacuum treatment installations that carry out large-area plasma treatment, can enlarge versatility.
In addition, according to the present invention, owing to have with the magnetite portion of the corresponding shape of antenna part the outside of vacuum tank be configured in via dielectric portion antenna part near (for example vacuum tank side), thereby can in vacuum tank, encourage plasma reliably, the result, discharge can be kept pressure guarantee to the equal low-pressure of prior art (for example ecr plasma source), can access highdensity plasma thus.
Press with upper type, according to the present invention, the various vacuum treatment installations that the problem because of effective area in the prior art is difficult to be suitable for (for example, rotary drum-type device, vacuum plant that large-area substrates is handled etc.) in, can be as to the plasma source in the various processes of the oxidation of film forming object, nitrogenize, ashing, etching, surface modification etc. and use.
And, plasma source mechanism of the present invention, can be used as so-called as described below digital sputter mode film formation device plasma treatment source (oxidation source) and use, it is used for carrying out repeatedly for example forming on substrate by sputter metallic film, and with the operation of this metallic film oxidation.
This film formation device possesses diaphragm area is arranged into, plasma treatment zone and rotary support mechanism, become diaphragm area in vacuum tank, on the film forming object, to form multilayer film by magnetron sputtering, the plasma treatment zone is carried out plasma treatment by plasma source mechanism of the present invention to the film on the film forming object, rotary support mechanism can be rotated under the state that supports the film forming object, and, constitute and follow this rotation, this film forming object is by above-mentioned a plurality of one-tenth diaphragm areas and plasma treatment zone, this film formation device constitutes, make this rotary support mechanism rotation on one side, on the film forming object, form the film of regulation on one side in the film forming location, and, in the plasma treatment zone, this film on this film forming object is carried out plasma treatment, according to this film formation device, can be with the good membranous for example hybrid films of metal and oxide that forms efficiently.
According to the present invention, can provide a kind of and can reproducibility generate high density and large-area plasma well, can be applicable to the plasma source and the vacuum treatment installation of the cheapness of purposes widely thus.
Description of drawings
Fig. 1 (a) is the plane graph that the outward appearance of the execution mode of demonstration plasma source mechanism of the present invention constitutes, Fig. 1 (b) is the A-A line profile of Fig. 1 (a), is to show that the section that is installed in this plasma source mechanism in the vacuum tank constitutes and the figure of user mode.
Fig. 2 is the skeleton diagram that shows the circuit formation of this plasma source mechanism.
Fig. 3 is the skeleton diagram of the variation that shows that the circuit of this plasma source mechanism constitutes.
Fig. 4 is the plane graph that the outward appearance of the variation of this plasma source mechanism of demonstration constitutes.
Fig. 5 (a) is the front view that shows the execution mode of the film formation device that uses plasma source mechanism of the present invention, and Fig. 5 (b) is the plane graph of this film formation device.
List of parts
1: plasma source mechanism
10: dielectric portion
11: magnetite portion
12: antenna part
13: permanet magnet
14: the 1 aerial coils
15: the 2 aerial coils
14a, 15a: long limit body (antenna body portion)
14b, 15b: minor face body (antenna body portion)
16: high frequency electric source
20: vacuum tank
21: vacuum plant
22: the process object thing
Embodiment
Below, with reference to the accompanying drawings, describe embodiments of the present invention in detail.
Fig. 1 (a) is the plane graph that the outward appearance of the execution mode of demonstration plasma source mechanism of the present invention constitutes, Fig. 1 (b) is the A-A line profile of Fig. 1 (a), is to show that the section that is installed in this plasma source mechanism in the vacuum tank constitutes and the figure of user mode.
In addition, Fig. 2 is the skeleton diagram that shows that the circuit of the plasma source mechanism of present embodiment constitutes.
Shown in Fig. 1 (a), Fig. 1 (b), the plasma source mechanism 1 of present embodiment is applicable to the vacuum plant 21 with vacuum tank 20, and is installed on outside wall surface (for example end face) 20a of this vacuum tank 20.
At this, the vacuum tank 20 of vacuum plant 21 is connected in the vacuum exhaust system that does not show among the figure, and, be connected in the processing gas source that does not show among the figure.And in the inside of vacuum tank 20, the process object thing 22 that is carried out plasma treatment by plasma source mechanism 1 for example is configured on the pedestal 23.
In addition, in this vacuum tank 20, the film deposition source (not shown) of the sputtering target etc. of the voltage that for example can apply regulation can be set also.In addition, the mode that also can handle object 22 with handing-over under vacuum connects the film forming groove (not shown) of carrying out sputter etc. via gate valve to this vacuum tank 20.
The plasma source mechanism 1 of present embodiment has dielectric portion 10, magnetite portion 11 and antenna part 12, and dielectric portion 10 is installed on the outside wall surface 20a of vacuum tank 20, and magnetite portion 11 is arranged on this dielectric portion 10, and antenna part 12 is arranged in this magnetite portion 11.
And, under the situation of present embodiment, in the magnetite portion 11 that so constitutes, to be provided with the antenna part 12 of the ring-type that constitutes by the 1st and the 2nd aerial coil 14,15 with the corresponding mode of the shape of magnetite portion 11.
At this, the 1st forms long limit body (antenna body portion) 14a, 15a with equal length and identical rectangle (rectangle) shape of minor face body (antenna body portion) 14b, 15b with the 2nd aerial coil 14,15, and in overlapping respectively mode near configuration.
In this case, the 1st and the 2nd aerial coil 14,15 is configured to the middle body that each several part is positioned at the Width of magnetite portion 11.
In addition, the 1st and the 2nd aerial coil 14,15 constitutes as described below and is connected on the high frequency electric source 16, and is applied High frequency power (for example frequency 13.56MHz) respectively.
As Fig. 1 (a) and shown in Figure 2, under the situation of present embodiment, the coil that the 1st and the 2nd aerial coil 14,15 is reeled by 1 circle constitutes, and side's terminals side is ground connection respectively.In addition, the opposing party's of the 1st and the 2nd aerial coil 14,15 terminals side is connected in parallel with respect to high frequency electric source 16 respectively via the matching box 17 with match circuit 17a and tuning circuit 17b.
And, in the present embodiment, the magnetic pole of magnetite portion 11 is set for, if apply High frequency power, then be offset near the process object thing 22 of vacuum tank 20 inside by applying magnetic field that plasma that electric power motivates is positioned at the magnetite portion 11 of vacuum tank 20 from 16 pairs the 1st of high frequency electric sources and the 2nd aerial coil 14,15.
Under the situation of above-described present embodiment, since the 1st and the 2nd aerial coil 14,15 of the rectangular ring of the antenna body portion with linearity of antenna part 12 in abutting connection with and near configuration, thereby compared with prior art, can reduce the L composition of antenna part 12, the result, even the High frequency power of the frequency of common employed 13.56MHz also can generate large-area ICP discharge.
So, according to present embodiment, can be applicable to the various vacuum treatment installations that carry out large-area plasma treatment, can enlarge versatility.
In addition, according to present embodiment, since the outside of vacuum tank 20 will have via dielectric portion 10 magnetite portion 11 with antenna part 12 corresponding shapes be configured in antenna part 12 near vacuum tank 20 sides, thereby in vacuum tank 20, generate plasma reliably, thereby discharge can be kept pressure guarantee to the equal low-pressure of prior art (for example ecr plasma source), can access highdensity plasma thus.
In addition, the present invention is not limited to above-mentioned execution mode, can carry out various changes.
For example, in the above-described embodiment, be that example is illustrated as the situation of antenna part so that two aerial coils to be set, but, the present invention is not limited to this, for example also can be as shown in Figure 3, and with the aerial coil more than three 14,15,18... is connected in parallel and in abutting connection with configuration.According to such formation, owing to have and still the L composition of antenna part is reduced and increase the identical effect of the number of turn, thereby can form stronger magnetic field.Therefore, even improve plasma density, the situation of coupling also can not occur to obtain, thereby obtain stable discharge.
In addition, in the above-described embodiment, with the situation that the 1st and the 2nd aerial coil 14,15 formed rectangular shape is that example is illustrated, and still, the present invention is not limited to this, for example, also can in each aerial coil 14,15, form long limit body 14a, 15a and minor face body 14b, the 15b of linearity as shown in Figure 4, and, bight 14c (15c) is formed the R shape and constitutes aerial coil.According to such formation,, be identically formed the plasma of homogeneous with line part, and can carry out the plasma treatment (under the situation that imports oxidizing gas, being oxidation reaction) of homogeneous large-area substrate even also become mitigation in magnetic field, bight.
Fig. 5 (a), Fig. 5 (b) have shown the execution mode of the film formation device that uses plasma source mechanism of the present invention, and Fig. 5 (a) is a front view, and Fig. 5 (b) is a plane graph.
Shown in Fig. 5 (a), Fig. 5 (b), the film formation device 51 of present embodiment has the vacuum treatment groove 52 of for example polygon tubular that is connected in the vacuum exhaust system that does not show among the figure.
Core in vacuum treatment groove 52, for example the rotation back-up roller (rotary support mechanism) 53 of polygon tubular is arranged to concentric shape with respect to vacuum treatment groove 52.It is center and for example being rotated along clockwise direction that this rotation back-up roller 53 constitutes with its rotating shaft O.
In the side surface part of rotation back-up roller 53, loading and unloading are supported with a plurality of substrate fixers 54 of maintenance as the substrate 55 of film forming object freely.
In vacuum treatment groove 52, be provided with 4 dividing plate 56a～56d, these separate plate 56a～56d the space segmentation around the rotation back-up roller 53 in the vacuum treatment groove 52 are become 4 zones.
Under the situation of present embodiment, these 4 zones are made of the first one-tenth diaphragm area 57, preparation zone 58, the second one-tenth diaphragm area 59 and oxide regions 60, the adjacency configuration in the clockwise direction of these zones 57～60 with this order, and, the configuration that adjoins each other of the first one-tenth diaphragm area 57 and oxide regions 60.
In the first one-tenth diaphragm area 57 of vacuum treatment groove 52, with the side surface part that is supported in rotation back-up roller 53 on and the relative position of the substrate fixer that passes through 54, be provided with sputter cathode 62a, the 62b of magnetic control mode.
At sputter cathode 62a, 62b, be separately installed with for example metallic target 63a, the 63b of Ta etc.
Sputter cathode 62a, 62b are connected with first AC power 64, and constitute from this first AC power 64 and apply alternating voltage via sputter cathode 62a, 62b to metallic target 63a, 63b.
In addition, the first one-tenth diaphragm area 57 of vacuum treatment groove 52 is connected with inert gas introgressive line 70, when sputter, will be for example the inert gas of argon (Ar) gas etc. be directed in the first one-tenth diaphragm area 57.
On the other hand, in the second one-tenth diaphragm area 59 of vacuum treatment groove 52, with the side surface part that is supported in rotation back-up roller 53 on and the relative position of the substrate fixer that passes through 54, be provided with sputter cathode 65a, the 65b of magnetic control mode.
At sputter cathode 65a, 65b, be separately installed with for example semiconductor target 66a, the 66b of Si etc.
Sputter cathode 65a, 65b are connected with second AC power 67, and constitute from this second AC power 67 and apply alternating voltage via sputter cathode 65a, 65b to semiconductor target 66a, 66b.
In addition, the second one-tenth diaphragm area 59 is connected with the second inert gas introgressive line 71, when sputter, the inert gas of for example argon gas body etc. is directed in the second one-tenth diaphragm area 59.
In the outside of the oxide regions 60 of vacuum treatment groove 52,, be provided with the oxidation source 69 of the plasma source mechanism of the invention described above in the position relative with the substrate fixer that passes through 54.
In addition, this oxide regions 60 is connected with oxidizing gas introgressive line 72, when sputter, on one side with for example oxygen (O
2) be directed in the oxide regions 60, Yi Bian make oxidation source 69 work, thus when film forming, in oxide regions 60, carry out the oxygen plasma discharge.
Below, with the film formation device 51 that uses present embodiment and on substrate 55, carry out Ta and SiO
2The situation of film forming of hybrid films be example, describe.
In this case, at first, carrying out vacuum exhaust becomes the pressure of regulation in vacuum treatment groove 52, then, from inert gas introgressive line 70 argon gas is directed into the first one-tenth diaphragm area 57, and, from the second inert gas introgressive line 71 argon gas is directed into the second one-tenth diaphragm area 59, and, from oxidizing gas introgressive line 72 oxygen is directed into oxide regions 60.
Then, speed with regulation makes 53 rotations of rotation back-up roller along clockwise direction, under the state of the gate that in closing figure, does not show, with alternating voltage be applied to metal (Ta) target 63a, 63b and semiconductor (Si) target 66a, 66b is last and carry out pre-sputter, and, make oxidation source 69 work and in oxide regions 60, carry out the oxygen plasma discharge.
Then, under the state of the rotation of keeping rotation back-up roller 53, passing through on the substrate 55 in city, the first film forming district 57 the Ta film by sputter about film forming 1 atom by opening the sluices.
And then, at the second one-tenth diaphragm area 59, on the substrate 55 that passes through, the Si film by sputter about film forming 1 atom.
Under situation of the present invention, the revolution of rotation back-up roller 53 is not limited especially, but forms the film about 1 atom and guarantee to a certain degree productive viewpoint from rotation each time, and being preferably per minute 50～200 changes.
In addition, the frequency of the alternating voltage that applies from second AC power 67 is not limited especially, and still, the viewpoint from the charge storage compensation that polarity inversion caused is preferably 20～100kHz.
And in oxide regions 60, the Si film oxidation on the substrate 55 that will be passed through by oxygen plasma makes it become SiO
2Film.
Subsequently, by making the rotation of rotation back-up roller 53, and meanwhile carry out above-mentioned each operation repeatedly, thereby on substrate 55 film forming Ta and SiO
2Hybrid films.
According to above-described present embodiment, make 53 rotations of rotation back-up roller on one side, by the first one-tenth diaphragm area 57 time, carry out magnetron sputtering on one side, on substrate 55, form the Ta film, and, in the second one-tenth diaphragm area 59 and oxide regions 60, carry out Si magnetron sputtering and oxidation, on substrate 55, form SiO
2Film carries out these operations repeatedly continuously and forms Ta and SiO
2Hybrid films, thereby with Ta and SiO
2Sintered body use as target and do not use the situation of the high-frequency sputtering of magnet to compare, can shorten film formation time.
Especially, in the present embodiment, used a plurality of rectangular-shaped aerial coil that can apply High frequency power and with the oxidation source 69 of the corresponding rectangular-shaped magnetite portion combination of aerial coil, thereby can plasma be enclosed in this rectangular area by the magnetic field of magnetite portion, so, have the advantage of the oxidation distribution that obtains homogeneous in the rectangular area.
In addition, under the situation of present embodiment, use respectively independently metal (Ta) target 63a, 63b and semiconductor (Si) target 66a, 66b and carry out sputter, thereby can at random control Ta and SiO in the hybrid films
2Ratio of components, and film forming has the hybrid films of the resistance value distribution of expectation.
And, in the present embodiment, use semiconductor (Si) target 66a, 66b and on substrate 55, form the Si film at the second one-tenth diaphragm area 59, and then oxide regions 60 by the oxidation reaction of oxygen plasma oxidation Si film and on substrate 55, form SiO
2Film, thereby, when sputter, do not produce oxidation reaction, can improve rate of film build.In addition, on the Ta film, form the Si film, and then carry out the oxidation of Si film, thereby the Ta film is difficult to oxidizedly, can seek membranous raising.
In addition, in the present invention, as rotary support mechanism, except as the rotary support mechanism of the cylinder shape of above-mentioned execution mode, also can use discoideus rotary support mechanism.
Claims (5)
1. a plasma source mechanism can be applicable to the vacuum plant with vacuum tank, and described plasma source mechanism has:
The antenna part of ring-type is configured in the outside of described vacuum tank via dielectric portion, have the antenna body portion of linearity and can apply High frequency power; And
Magnetite portion, the outside of described vacuum tank be configured in via described dielectric portion described antenna part near, and have and the corresponding shape of described antenna part,
Wherein, a plurality of aerial coils of described antenna part in abutting connection with and near configuration, and this each aerial coil is connected in parallel.
2. plasma source mechanism according to claim 1 is characterized in that, described antenna part and magnetite portion form rectangular-shaped.
3. plasma source mechanism according to claim 1 is characterized in that, each aerial coil of described antenna part is reeled by 1 circle and constituted.
4. film formation device possesses:
Vacuum tank; And
Film deposition source is arranged on the inside of described vacuum tank,
And described film formation device is provided with plasma source mechanism, and described plasma source mechanism has: the antenna part of ring-type, be configured in the outside of described vacuum tank via dielectric portion, and have the antenna body portion of linearity and can apply High frequency power; And magnetite portion, the outside of described vacuum tank be configured in via described dielectric portion described antenna part near, and have and the corresponding shape of described antenna part, wherein, the a plurality of aerial coils of described antenna part in abutting connection with and near configuration, and this each aerial coil is connected in parallel.
5. film formation device possesses:
Vacuum tank;
Become diaphragm area, be arranged in the described vacuum tank, and be used on the film forming object, forming multilayer film by magnetron sputtering;
The plasma treatment zone is arranged in the described vacuum tank, and by plasma source mechanism the film on the described film forming object is carried out plasma treatment; And
Rotary support mechanism is arranged in the described vacuum tank, can be rotated supporting under the state of described film forming object, and, constituting and be accompanied by this rotation, this film forming object is by described a plurality of one-tenth diaphragm areas and described plasma treatment zone,
Described plasma source mechanism has: the antenna part of ring-type, be configured in the outside of described vacuum tank via dielectric portion, and have the antenna body portion of linearity and can apply High frequency power; And magnetite portion, the outside of described vacuum tank be configured in via described dielectric portion described antenna part near, and have and the corresponding shape of described antenna part, wherein, a plurality of aerial coils of described antenna part in abutting connection with and near configuration, and, this each aerial coil is connected in parallel
Constitute, in described vacuum tank, Yi Bian make described rotary support mechanism rotation, on described film forming object, form the film of regulation on one side in described film forming location, and,, this film on this film forming object is carried out plasma treatment in described plasma treatment zone.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007328405 | 2007-12-20 | ||
| JP2007-328405 | 2007-12-20 | ||
| PCT/JP2008/072614 WO2009081761A1 (en) | 2007-12-20 | 2008-12-12 | Plasma source mechanism and film forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101904227A true CN101904227A (en) | 2010-12-01 |
Family
ID=40801067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801225931A Pending CN101904227A (en) | 2007-12-20 | 2008-12-12 | Plasma source mechanism and film forming apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JPWO2009081761A1 (en) |
| KR (1) | KR101115273B1 (en) |
| CN (1) | CN101904227A (en) |
| TW (1) | TWI445461B (en) |
| WO (1) | WO2009081761A1 (en) |
Cited By (1)
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| CN109074998A (en) * | 2016-04-29 | 2018-12-21 | 雷特罗萨米科技有限责任公司 | VHF Z-line circle plasma source |
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| JP5229995B2 (en) * | 2008-04-07 | 2013-07-03 | 株式会社アルバック | Antenna, AC circuit, and plasma processing apparatus |
| JP5684483B2 (en) * | 2010-02-26 | 2015-03-11 | 株式会社イー・エム・ディー | Antenna for plasma processing apparatus and plasma processing apparatus using the antenna |
| JP2012248578A (en) * | 2011-05-25 | 2012-12-13 | Ulvac Japan Ltd | Plasma etching device |
| JP5644719B2 (en) * | 2011-08-24 | 2014-12-24 | 東京エレクトロン株式会社 | Film forming apparatus, substrate processing apparatus, and plasma generating apparatus |
| JP5712874B2 (en) * | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
| KR101522891B1 (en) | 2014-04-29 | 2015-05-27 | 세메스 주식회사 | Plasma generating device and apparatus for treating substrate comprising the same |
| JP2017201651A (en) * | 2016-05-02 | 2017-11-09 | 株式会社神戸製鋼所 | Method for manufacturing oxide semiconductor |
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| EP1637624B1 (en) * | 2003-06-02 | 2012-05-30 | Shincron Co., Ltd. | Thin film forming apparatus |
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- 2008-12-12 CN CN2008801225931A patent/CN101904227A/en active Pending
- 2008-12-12 KR KR1020107012794A patent/KR101115273B1/en active IP Right Grant
- 2008-12-12 WO PCT/JP2008/072614 patent/WO2009081761A1/en active Application Filing
- 2008-12-18 TW TW097149479A patent/TWI445461B/en active
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| EP0644577A1 (en) * | 1993-09-16 | 1995-03-22 | Hitachi, Ltd. | Treating method and treating apparatus for treated object under reduced pressure environment |
| CN1164122A (en) * | 1996-03-01 | 1997-11-05 | 株式会社日立制作所 | Plasma processor and its treating method |
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| KR20030004738A (en) * | 2001-07-06 | 2003-01-15 | 주성엔지니어링(주) | Plasma processing apparatus |
| CN1555568A (en) * | 2001-07-27 | 2004-12-15 | ��ķ�о�����˾ | Method and apparatus for producing uniform process rates |
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Also Published As
| Publication number | Publication date |
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| JP2012207307A (en) | 2012-10-25 |
| TWI445461B (en) | 2014-07-11 |
| JP5439539B2 (en) | 2014-03-12 |
| WO2009081761A1 (en) | 2009-07-02 |
| TW200935989A (en) | 2009-08-16 |
| KR101115273B1 (en) | 2012-03-05 |
| KR20100076067A (en) | 2010-07-05 |
| JPWO2009081761A1 (en) | 2011-05-06 |
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