CN1164122A - Plasma processor and its treating method - Google Patents

Plasma processor and its treating method Download PDF

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CN1164122A
CN1164122A CN 97103106 CN97103106A CN1164122A CN 1164122 A CN1164122 A CN 1164122A CN 97103106 CN97103106 CN 97103106 CN 97103106 A CN97103106 A CN 97103106A CN 1164122 A CN1164122 A CN 1164122A
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sample
plasma
gas
means
electrodes
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加治哲德
渡边克哉
三谷克彦
大坪彻
田地新一
田中润一
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株式会社日立制作所
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Abstract

在大直径试样进行微细图形精密加工,提高微细加工时选择比的等离子处理装置及等离子处理方法。 Selection ratio of the plasma processing apparatus and plasma processing method when a fine pattern precision machining large diameter sample increase micromachining. 在具有真空处理室,试样台,以及等离子生成装置的等离子处理装置中,还有在一对电极之间的50至200MH In the plasma processing apparatus having a vacuum processing chamber, a sample stage, and a plasma generating apparatus and the like, as well as between the pair of electrodes 50 to 200MH

Description

等离子处理机及其处理方法 Plasma processor and processing method

本发明涉及等离子处理机和处理方法,尤其涉及适合于半导体制造工艺中形成微细图形的等离子处理机和处理方法。 The present invention relates to a plasma processor and processing method, a fine pattern of a plasma processor and processing method relates in particular suitable for forming a semiconductor manufacturing process.

随着半导体器件集成度的提高,要求进一步提高微细加工效率和处理速度,为此必须降低等离子处理的气压和提高等离子体密度。 With increased integration of semiconductor devices, further improvement in fine processing efficiency and processing speed, the pressure must be reduced for this plasma treatment and the like to improve the plasma density.

降低气压和提高等离子体密度的方法有许多种,例如:(1)利用微波(2.45GHz)电磁场和静磁场(875高斯)的回旋加速共振现象(简称ECR);(2)利用RF(射频)电源来激励线圈,生成感应电磁场,发生等离子体(简称ICP)。 The method of reducing the pressure and plasma density increase there are many types, for example: (1) using a microwave (of 2.45 GHz) electromagnetic fields and the static magnetic field (875 Gauss) cyclotron resonance (abbreviated ECR); (2) use RF (radio frequency) power supply to the exciting coil, generates an induced electromagnetic field, the occurrence of plasma (referred to as ICP).

但在用碳氟化合物(fluorocarbon)系气体来刻蚀氧化膜类的薄膜时,目前利用(1)的ECR方式和(2)的ICP方式,气体离解过度,很难提高与底层的Si或SiN的选择比。 But with fluorocarbon (Fluorocarbon) based gas to etch the oxide thin film and the like, using the current (1) of ECR-and (2) by ICP manner, excessive dissociation of the gas, it is difficult to improve the underlying Si or SiN selectivity.

另一方面,在平行平板间加射频电压来发生等离子体的原有方法,很难在10Pa以下的压力下稳定地放电。 On the other hand, the original method of the plasma RF voltage applied to occur between the parallel plate, it is difficult to stably discharge at a pressure of 10Pa or less.

解决上述困难的方法有以下两个:(3)特开平7-297175号公报和特开平3-204925号公报所示的双频激励法,即利用数十MHz以上高频电压来生成等离子体,利用数MHz以下的低频来进行试样偏压控制;(4)特开平2-312231号公报所示的磁控管RIE(简称M-RIE)法,即在与试样表面上感应的自偏压电场(E)相交叉的方向上施加磁场B,利用电子洛伦兹力的电子抑制作用。 The method of solving the above problem are the following two: dual excitation method (3) Laid-Open Publication No. 7-297175 and JP Laid-Open No. 3-204925 shown, namely the use of more than several tens of MHz high-frequency voltage to generate a plasma, below a few MHz using a low frequency bias control sample is performed; (4) shown in JP-a No. 2-312231 is a magnetron RIE (referred to as M-RIE) method, i.e. the induced self-bias on the sample surface It is applied in a direction intersecting the piezoelectric field (E) a magnetic field B, the Lorentz force electrons using an electron inhibition.

另外,特开昭56-13480号公报所述的方法是在低气压下增加等离子体密度。 Further, JP Laid-Open Publication No. 56-13480 is to increase the plasma density at low gas pressure. 这是灵活利用由电磁波的微波(2.45GHz)和静磁场(875高斯)所形成的电子回旋加速共振(ECR),即使0.1-1Pa的低气压也能获得很高的等离子体密度。 This is a flexible use of microwave electron cyclotron electromagnetic wave (of 2.45 GHz) and a static magnetic field (875 gauss) formed accelerated resonance (ECR), low pressure can be obtained even 0.1-1Pa the high plasma density.

另一方面,在利用等离子体进行半导体腐蚀处理和成膜处理等的技术方面,采用这样的处理装置,该装置对放置被处理试样(例如半导体晶片衬底,以下简称试样)的试样台,准备了对等离子体中的离子进行加速的高频电源,以及利用静电吸力来把试样固定在试样台上的静电吸附膜。 On the other hand the sample, using the technology in a semiconductor plasma etching process and the deposition process or the like, such a processing apparatus, the apparatus is placed on the sample to be processed (e.g. a semiconductor wafer substrate, hereinafter referred to as sample) table, prepared on high-frequency power to accelerate ions in the plasma, and the samples to a sample stand electrostatic adsorption film by electrostatic attraction.

例如,USP5,320,982号说明书所述的装置,用微波来产生等离子体,利用静电吸附力来把试样固定到试样台上,同时在试样和试样台之间通过导热气体来控制试样的温度,另一方面,把正弦波输出的高频电源作为偏压电源,把该电源连接到试样台上,对射入试样内的离子能量进行控制。 For example, according to the specification No. USP5,320,982 means, to generate microwave plasma, by electrostatic attraction to the sample on the sample table is fixed, while the sample between the sample and the sample stage is controlled by the heat transfer gas temperature of the sample, on the other hand, the high frequency sine wave power output as a bias power source, the power supply is connected to the sample table, incident ion energy in the control samples.

另外,如特开昭62-280378号公报所述,生成一种脉冲状的离子控制偏压波形来使等离子体电极之间的电场强度保持一定,把该偏压加在试样台上,这样即可缩小射入试样内的离子能量的分布宽度,可以使刻蚀加工尺寸精度和被处理膜与底层材料的刻蚀速度比提高数倍。 Further, Laid-Open Publication No. Sho 62-280378 said, produces a pulsed ion control bias waveform electric field intensity between the plasma electrode is kept constant, the bias is applied to the sample table, and to reduce the width of the incident ion energy distribution in the specimen, the dimensional accuracy of etching process can be processed and the base material film etching speed ratio increases several times.

再者,如特开平6-61182号公报所述,利用电子回旋加速共振来产生等离子体,把脉冲占空系数为0.1%以上的宽度的脉冲偏压加到试样上,防止产生“凹槽”(notch)。 Furthermore, as the JP Laid-Open No. 6-61182, an electron cyclotron resonance plasma is generated, the pulse width of the bias pulse representing the space factor of 0.1% or more is applied to the sample and prevent "groove "(notch).

在上述现有技术中,特开平7-288195号公报和特开平7-297175号公报所述的等离子体发生方式,是利用13.56MHz和数十MHz的高频来生成等离子体。 In the prior art, Japanese Patent Publication No. 7-288195 Publication embodiment the plasma generator and the JP-A No. 7-297175 is 13.56MHz and the plasma is generated using a high frequency of tens of MHz. 利用数十-5Pa(帕斯卡)的气压,可以生成适合于氧化膜刻蚀的良好等离子体。 Using tens -5Pa (Pascal) pressure, it can be adapted to generate good plasma etching the oxide film. 但是,随着图形尺寸的微细化(0.2μm以下),更迫切需要使被处理图形的线条上下垂直。 However, with the miniaturization of the pattern size (0.2 m or less), and more urgent need for the lines to be perpendicular to the vertical processing graphics. 因此,必须降低气压。 Therefore, the pressure must be reduced.

但是,利用上述双频激励法和M-RIE法,在4Pa以下(0.4-4Pa)时很难生成5×1010cm-3以上的所需密度的等离子体。 However, using the dual excitation method and the M-RIE method, it is difficult to generate the required density of 5 × 1010cm-3 or more when plasma less 4Pa (0.4-4Pa). 例如,利用上述双频激励法,即使提高等离子激励频率,也不能在50MHz以上使等离子体密度提高,反而出现下降现象,很难在0.4-4Pa的低压下使等离子体密度达到5×1010cm-3以上。 For example, using the dual excitation method, even if raising the plasma excitation frequency, the plasma density can not be improved more than 50MHz, but dropout is hard to make the plasma density 5 × 1010cm-3 at a low pressure 0.4-4Pa the above.

再者,利用M-RIE法时,试样表面上产生的电子劳伦兹力引起电子抑制作用,依靠这种作用而生成的等离子体密度应当在整个试样上均匀一致。 Further, when using the M-RIE method, an electron Lorentz force generated on the sample surface caused by inhibition of electron, rely on this effect generated by the plasma density should be uniform throughout the specimen. 但是,其缺点是,E×B的漂移,一般会造成等离子体密度在面内发生偏移。 However, the drawback is, E × B drift, offset typically causes the plasma density occurs in a plane. 在电子的抑制作用下直接在试样表面上形成的等离子体密度的偏移,发生在电场强度大的试样近旁的外膜(sheath)附近,所以用扩散等方法无法修正。 Plasma density formed at offset inhibition of electrons on the sample surface directly, occurring in the vicinity of a large electric field intensity near the outer membrane sample (sheath), it can not be corrected by diffusion or the like.

其解决办法如特开平7-288195号公报所述,在由E×B造成的电子漂移方向上放置磁铁,以减弱磁场强度,这样以来,与试样相平行的磁场的最大值,即使加上200高斯,也可以获得没有偏移的均匀等离子体。 And their solution as the JP No. 7-288195, the electron drift direction is placed caused by the E × B magnet, in order to weaken the magnetic field strength, so since the maximum value of the magnetic field parallel to the sample, even with 200 gauss, the plasma uniformity can be obtained without offset. 但是,其缺点是:电场强度分布一旦固定,则形成均匀等离子体的条件就被限定在某一特定的狭窄的范围内,因此,不容易根据处理条件的变化再做必要的调整。 However, the drawback is: electric field intensity distribution Once secured, uniform plasma is formed condition was defined within a specific narrow range, and therefore, do not easily accommodate changes in the necessary process conditions. 尤其是Ф300mm以上的大型试样,电极间的距离很窄,为20mm以下时,试样中央部上的压力比试样端部上的压力大10%以上,为了避免试样上的压力差,要把试样台和对面电极间的间隔设定在30mm以上时,困难更大。 Especially large specimens Ф300mm above, the distance between the electrodes is very narrow, of 20mm or less when the pressure on the sample than the pressure on the central portion of the ends of the specimen 10% or more, in order to avoid a pressure difference on the sample, when the interval between the sample stage and the opposing electrode should be set at 30mm or more, even more difficult.

这样,利用上述双频激励法和M-RIE法,在0.4-4Pa的低压下很难使5×1010cm-3的等离子体密度在Ф300mm的试样平面内达到均匀一致。 Thus, using the dual excitation method and the M-RIE method, it is difficult at 0.4-4Pa low pressure plasma density of 5 × 1010cm-3 in the sample to achieve uniform plane of Ф300mm. 所以,利用双频激励法和M-RIE法,对Ф300mm以上的大型晶片,很难以0.2μm以下线宽的工艺进行均匀而高效的加工,很难提高与底层(Si或SiN)的选择比。 Therefore, the use of dual-frequency excitation method and the M-RIE method, large wafer above Ф300mm, it is difficult to process a line width of 0.2μm or less uniform and efficient processing, it is difficult to improve the selection underlayer (Si or SiN) ratio.

另一方面,为了在低气压下大幅度提高等离子体密度,可以采用上述现有技术中的特开昭56-13480号公报所述的方法。 On the other hand, to significantly increase the plasma density at low gas pressure, the above-described method of the prior art Patent Laid-Open Publication No. 56-13480 bulletin can be employed. 但是,其缺点是:气体离解过度(快),利用含有氟和碳的气体来腐蚀氧化硅和氮化硅膜等时,大量产生氟原子/分子和氟离子,达不到所需的与底层(Si等)的选择比。 However, the disadvantages are: excessive gas dissociation (fast), and the time for etching the silicon nitride oxide film with a gas containing fluorine and carbon, to produce a large number of fluorine atoms / molecules and fluoride ions reach the desired underlying (Si, etc.) selection ratio. 利用射频功率的感应电磁场的ICP法,也和上述ECR法一样,具有离解过快的缺点。 Induction field using radio frequency power of ICP method, ECR method as described above, and also, has the disadvantage of rapid dissociation.

再者,一般采用的结构是,处理气体从试样的周围排放,这时试样中央部的密度高,周围部的密度低,其缺点是,整个试样面上的处理均匀性受到影响。 Further, the structure is generally used, around the sample discharged from the process gas, then the high density at the central portion of the sample, the low density peripheral portion, the disadvantage that process uniformity across the sample surface is affected. 为克服这一缺点,在试样的周围附近设置环状围堤(聚集环),使气流停止。 To overcome this drawback, in the vicinity of an annular dike around the sample (the aggregation ring), the air flow is stopped. 但缺点是围堤上附着反应生成物,形成杂质发生源,使产品合格率降低。 But the disadvantage is the reaction product adhered dike, an impurity generation source, so that production yield is lowered.

另一方面,为了控制射入试样的离子能量,把正弦波的射频偏压加在放置试样的电极上。 On the other hand, in order to control the ion energy incident on the sample, the sine wave RF bias applied to the electrode of the sample is placed. 其频率采用数百KHz至13.56MHz。 The frequency of the use of hundreds of KHz to 13.56MHz. 用这一频带时, 由于离子随外膜(sheath)内的电场变化而变化,所以射入的离子的能量呈双峰形,即具有低能侧的和高能侧的两个峰值。 When using this frequency band, the ion electric field varies with changes in the outer membrane (sheath) due, the energy of the incident ions bimodal shape, i.e., having two peaks and the low energy side of the high energy side. 其缺点是:高能侧的离子处理速度快,对试样造成损伤;低能侧的离子处理速度慢。 Its disadvantages are: the high energy of fast ions processing speed side, damage to the specimen; low-energy side of the plasma processing rate is slower. 要消除损伤就要降低速度;要提高处理速度就要造成损伤。 To eliminate the damage will reduce the speed; to improve the processing speed will cause damage. 另一方面,若把射频偏压频率提高到50MHz以上,则射入的能量分布整齐,接近于单一峰值,其大部分能量被用于生成等离子体,外膜(sheath)上所加的电压大幅度下降,所以,很难单独控制射入离子的能量。 On the other hand, if the RF frequency of the bias to improve above 50MHz, the incident energy distribution uniformity, close to a single peak, most of the energy is used to generate a plasma, the outer membrane (sheath) voltage applied to a large rate of decline, it is difficult to individually control the energy of the incident ions.

在上述现有技术中,特开昭62-280378号公报和特开平6-61182号公报所述的脉冲偏压电源方式,若对于在试样台电极和试样之间使用静电吸附介质层,在试样上加脉冲偏压,未能充分探讨研究,原封不动的用于静电吸附方式,则随着离子电流的流入,静电吸附膜的两端间发生的电压增加,造成等离子体和试样表面间所加的离子加速电压下降,离子能量分布扩展,因此其缺点是,不能以充分控制试样温度的方法来适应所需的微细图形处理。 In the prior art, JP Laid-Open Publication No. 62-280378 and Laid-Open Patent Publication pulsed bias power supply according to embodiment No. 6-61182, if the dielectric layer using the electrostatic attraction between the sample electrode and the sample stage, pulsed bias voltage on the sample, not fully explore the research, the electrostatic adsorption is used intact, as the ion current flows, the voltage generated between both ends of the electrostatic adsorption film increases, resulting in a plasma sample, and between the surface of the sample applied ion acceleration voltage drop, the ion energy distribution spreading, therefore the disadvantage that the method can not adequately control the temperature of the sample to accommodate the desired fine pattern processing.

另外,采用USP5,320,982号说明书所述的原有正弦波输出偏压电源方式时,若提高频率,则外膜(sheath)部的阻抗接近或低于等离子体本身的阻抗,因此,其缺点是:在偏压电源作用下在试样近旁的外层附近产生不需要的等离子体,不能有效地利用于加速离子,同时等离子体分布也恶化,不能用偏压电源来控制离子能量。 Further, when using the original sine wave output USP5,320,982 specification No. bias power source of the embodiment, if the frequency is improved, the outer membrane (sheath) impedance portion near or below the impedance of the plasma itself, and therefore, the drawback is : under the action of a bias power supply unwanted plasma in the vicinity of the outer vicinity of the sample can not be effectively used for accelerating ions, but also deteriorated the plasma distribution, can not be used to control the ion energy bias power source.

再者,在等离子处理中,对离子量、原子团量和原子团种类进行适当的控制,这对提高性能是很重要的。 Further, in the plasma processing, the amount of ions, atomic group amount and type of atoms appropriate control group, which is very important for improving performance. 但是,过去是把作为离子源和原子团源的气体送入处理室内,在处理室内生成等离子体,同时生成离子和原子团。 However, as in the past it is the ion source and radical source gas atoms into the processing chamber, generating a plasma in the process chamber, while generating ions and radicals. 所以,随着被处理试样向微细化发展,要进行上述控制所受到的限制越来越明显。 Therefore, with the development of miniaturization to be treated sample to be limiting of the control by the more and more obvious.

本发明的目的在于提供这样一种等离子处理装置和处理方法,即不出现气体离解过度现象,在Ф300mm以上的大晶片范围内能获得均匀的等离子体,从而容易对大晶片试样的微细图形进行精密加工。 Object of the present invention is to provide a plasma processing apparatus and processing method that does not occur over a gas dissociation phenomena in a wide range of wafer Ф300mm more uniform plasma can be obtained, thereby easily fine pattern on a sample wafer is large Precision Machining.

本发明的另一目的在于提供一种尤其能在整个大晶片上均匀且高效地进行氧化膜处理的等离子处理机和处理方法。 Another object of the present invention is to provide a particular plasma processing method and a processor processing an oxide film and the like can be performed uniformly and efficiently over the large wafer.

本发明的另一目的在于提供一种提高试样中绝缘膜(例如SiO2,SiN、BPSG等)等离子体处理的选择比的等离子处理机和处理方法。 Another object of the present invention to provide a plasma processor and a sample processing method for improving the insulating film (e.g., SiO2, SiN, BPSG, etc.) than the selected plasma treatment and the like.

本发明的另一目的在于提供一种离子能量分布窄、稳定、低损伤、易控制的、可提高等离子体处理选择比的等离子处理机和方法。 Another object of the present invention to provide an ion energy distribution is narrow, stable, low damage, easy to control, and a method of ion plasma processing processor selection ratio can be improved.

本发明的另一目的在于提供一种通过试样静电吸附来改善温度可控制性,有精密而稳定地处理所需微细图形的等离子体处理机和方法。 Another object of the present invention to provide an improved temperature controllability for electrostatic adsorption by the sample, a sophisticated processor processing plasma stably and methods required a fine pattern.

本发明的另一目的在于提供一种可独立控制离子和原子团的等离子处理机和方法。 Another object of the present invention is to provide a method of independently controlling ion handler ions and radicals and the like.

本发明的特征在于,具有下列内容:等离子处理机具有真空处理室、包含一对电极的等离子体生成装置、带放置面的试样台(用于放置要在真空处理室内处理的试样)以及对上述真空处理室进行减压的减压装置。 Feature of the present invention is characterized by having the following contents: a vacuum plasma processor having a processing chamber, a plasma generating means comprising a pair of electrodes, the sample stage with the placement surface (for placing a sample to be processed in the vacuum processing chamber) and the above-described vacuum processing chamber for depressurizing the pressure reducing device. 在等离子处理机中,另外还具有高频电源和磁场形成装置。 In the plasma processing machine, and also having a high-frequency power magnetic field forming means.

高频电源,用于在上述一对电极间加30MHz至300MHz的VHF频带的高频功率;磁场形成装置,用于在与上述高频电源在上述一对电极间或其附近所生成的电场相交叉的方向上,形成静磁场或低频磁场,从而在上述一对电极间形成由上述磁场和上述电场相互作用而产生的电子回旋加速共振区。 A high frequency power source for the high frequency power of the VHF band of 30MHz to 300MHz between the pair of electrodes; magnetic field forming means for crossing the high frequency power source with an electric field between the pair of electrodes in or near the generated direction, a static magnetic field or low frequency magnetic fields, so as to form between the pair of electrodes by the magnetic field and the electric field generated by the interaction of the above-described electron cyclotron resonance region.

本发明的特征还在于具有下列内容:等离子处理机具有真空处理室、包含一对电极的等离子体生成装置、兼用作上述电极之一,同时用于放置在该真空室内处理的试样的试料台;以及对上述真空处理室抽真空的减压装置。 Feature of the present invention is further characterized by having the following contents: a vacuum plasma processor having a processing chamber, a plasma generating means comprising a pair of electrodes, and used as one of the electrodes, while a sample is placed in the vacuum chamber of the sample processing station; and means for evacuating the vacuum pressure of the process chamber. 等离子处理机中,另外还具有高频电源和磁场形成装置。 Plasma processing machine, and also having a high-frequency power magnetic field forming means.

高频电源,用于在上述一对电极间加50MHz至200MHz的VHF频带的电源;以及磁场形成装置,用于在与上述高频电源在上述一对电极间或其附近所产生的电场相交叉的方向上,形成17高斯以上72高斯以下的静磁场或低频磁场部分,上述磁场沿着试样台面的方向上的成分中最大的部分,被设定在试样台对面一侧,使其离开上述两电极的中央,利用上述磁场和电场的相互作用在一对电极间形成电子回旋加速共振区。 High frequency power supply, plus the VHF band for the 50MHz to 200MHz in power between the pair of electrodes; and a magnetic field forming means for crossing the high frequency power source with an electric field between the pair of electrodes in the vicinity thereof generated direction, is formed 17 Gauss or more low frequency or static magnetic field portion 72 gauss or less, the magnetic field component along the direction of the sample table in the largest part, is set at the opposite side of the sample table, away from the above-described the two central electrodes, using the magnetic and electric fields interact to form an electron cyclotron resonance region between the pair of electrodes.

本发明的另一特征在于,具有下列内容:等离子处理机具有真空处理室、包含一对电极的等离子体生成装置、兼用作电极之一,同时用于放置在真空室内处理的试样的试样台、对上述真空室进行减压的减压装置。 Another feature of the invention is characterized by having the following contents: a sample such as plasma processor having a vacuum processing chamber, comprising one plasma generation device and a pair of electrodes as an electrode, while the sample placed in a vacuum chamber for processing stage, the vacuum chamber for depressurizing the pressure means.

利用上述的等离子处理装置,对其试样进行等离子处理的方法中包括以下步骤:利用减压装置来使上述真空处理室内减压;利用磁场形成装置在与上述一对电极间的电场相交叉的方向上形成10高斯以上110高斯以下的静磁场或低频磁场的部分;利用高频电源在上述一对电极间加上30MHz至300MHz的VHF频带电源,利用上述磁场和高频电源产生的电场的相互作用在两电极之间形成电子回旋加速共振区;利用由上述电子回旋加速共振而产生的等离子体来处理上述试样。 With the above plasma processing apparatus, its method of plasma processing a sample comprising the steps of: using a vacuum device so that the vacuum processing chamber to a reduced pressure; means forming an electric field between the pair of electrodes of the crossing magnetic field or the low frequency part of the static magnetic field 110 Gauss magnetic field is less than 10 gauss direction is formed; plus a high-frequency power of the VHF band of 30MHz to 300MHz in power between the pair of electrodes, the magnetic field is generated by using an electric field and a high frequency power supply to each other effect of electron cyclotron resonance region is formed between the two electrodes; generated by the use of electron cyclotron resonance plasma processing of the sample.

若采用本发明,则为了不出现气体离解过度现象,并获得在Ф300mm以上的大晶片时饱和离子电流分布为±5%以下的均匀等离子体,等离子体生成用高频电源采用30MHz至300MHz,最好是50MHz至200MHz的VHF电源。 According to this invention, the gas does not appear to excessive dissociation phenomenon and to obtain a uniform plasma ion saturation current distribution is ± 5% or less of at least Ф300mm a large wafer using a plasma generating high frequency power supply from 30MHz to 300MHz, most good VHF power of 50MHz to 200MHz. 另一方面,在与上述高频电源在一对电极间生成的电场相交叉的方向上,形成静磁场或低频磁场。 On the other hand, the electric field in the direction of the high-frequency power generated between the pair of electrodes of the crossing, a static magnetic field or low frequency magnetic fields. 这样,在一对电极间,沿着试样台的试样放置面,离开两电极中央在试样台的对面一侧,利用磁场和电场的相互作用形成电子回旋加速共振区。 Thus, between a pair of electrodes placed along the surface of the sample stage of the sample, the electrodes away from the center of the side opposite to the sample table by magnetic and electric fields interact to form an electron cyclotron resonance region. 利用由电子回旋加速共振所生成的等离子体来处理试样。 Processed samples using an electron cyclotron resonance plasma generated.

磁场具有10高斯以上110高斯以下,最好是17高斯以上72高斯以下的静磁场或低频(1KHz以下)磁场部分,气压定为0.4Pa至4Pa的低压。 A magnetic field having at least 10 gauss 110 gauss or less, preferably 72 gauss or less than 17 gauss of the static magnetic field or low frequency (1KHz hereinafter) magnetic portions, as the pressure of the low pressure 4Pa to 0.4Pa. 并且,两电极间的距离定为30至100mm,最好是30至60mm。 The distance between the two electrodes 30 is set to 100mm, preferably 30 to 60mm. 另外,不言而喻,一对电极的面积应分别大于被处理试样的面积。 Further, needless to say, the area of ​​the pair of electrodes should be larger than the area of ​​the treated samples, respectively.

高频电源的频率f采用50MHz≤f≤200MHz的VHF,这样,等离子体密度比微波ECR时降低1-2个数量级。 Frequency f of high frequency power of VHF 50MHz≤f≤200MHz employed, so that the plasma density is reduced 1-2 orders of magnitude than microwave ECR. 并且,气体离解也减少,不需要的氧原子/分子和离子的发生量也减少约1个数量级。 And, a gas dissociation is reduced, unnecessary oxygen atoms / molecules and the generation amount of ions is also reduced by about one order of magnitude. 由于采用VHF频率和回旋加速共振,所以,可以获得适当的高密度等离子体,密度绝对值为5×1010cm-3,可在0.4-4Pa的低压下进行高速度处理。 As a result of VHF frequencies and the cyclotron resonance it is possible to obtain an appropriate high-density plasma, an absolute value of a density of 5 × 1010cm-3, high-speed processing can be performed at a low pressure 0.4-4Pa. 由于气体离解不过度,所以不会造成与Si或SiN等底层的选择比显著恶化。 However since the gas dissociation degree, it does not cause significant deterioration of the underlying selection ratio with Si or the like SiN.

与过去的13.56MHz的平行平板电极相比较,气体离解较少。 Compared with the conventional parallel plate electrode of 13.56MHz, less gas dissociation. 这样使氟原子/分子和离子稍有增加,采取以下措施即可缓解,即在电极表面和处理室壁面上设置含硅和碳的物质,并进一步在其上面加偏压,利用含氢的气体来使氢与氟相结合,然后排放出去。 Such fluorine atoms / molecules and ions increased slightly, taking the following measures to alleviate, i.e., silicon and carbon material disposed on the electrode surface and the surface of the processing chamber wall, and further thereon is biased by a hydrogen-containing gas to the combination of hydrogen and fluorine, and then discharged out.

再者,若采用本发明,则可把与试样台相平行的磁场成分的最大的部分设定在离开两电极的中央的试样台对面一侧,与试样台的试样放置面上的试样相平行的磁场强度,设定在30高斯以下,最好是15高斯以下,这样,把在试样安放面附近作用于电子的劳伦兹力(E×B)设定为较小的值,可防止在试样安放面上的劳伦兹力产生离子漂移效应而造成的等离子体密度不均匀。 Further, if the present invention is employed, can be the largest part of the sample table of a magnetic field component parallel to the sample stage is set on the opposite side away from the center of the two electrodes, and the sample stage is placed the sample surface sample parallel magnetic field strength is set at 30 gauss or less, preferably 15 gauss or less, so that the Lorentz force is set small to electrons (E × B) is placed near the sample surface in the effect unevenness value prevented from occurring ion drift Lorentz force effect in the mounting surface of the specimen caused by the plasma density.

若采用本发明的另一特征,则可扩大电子回旋加速共振效应,使试样周围部以及其外侧的这种效应大于中央的效应,从而使试样周围部及其外侧附近比试样中央部附近生成更多的等离子体。 Another feature of the present invention when employed, can expand the electron cyclotron resonance effect, and a portion around the sample outside of this effect which is greater than the effect of the center, so that the sample and the vicinity of the outer peripheral portion than the central portion of the sample plasma generated more nearby. 减小电子回旋加速共振效应的方法是:扩大回旋加速共振区和试样之间的距离;取消回旋加速共振区;减小磁场与电场的直交程度。 The method of reducing the electron cyclotron resonance effect is: expanding cyclotron resonance region and the distance between the specimen; cancel cyclotron resonance region; reduce the degree of magnetic field perpendicular to the electric field.

另外,若提高回旋加速共振磁场Bc附近的磁场倾斜度,使ECR共振区域变窄,则可减小回旋加速共振效应。 Further, if the inclination to improve the cyclotron resonance magnetic field near the magnetic field Bc, ECR resonance region is narrowed so that, cyclotron resonance effect may be reduced. ECR共振区为Bc(1-a)≤B≤Bc(1+a),但磁场强度B的范围变成0.05≤a≤0.1。 ECR resonance region is Bc (1-a) ≤B≤Bc (1 + a), although the scope of the magnetic field intensity B becomes 0.05≤a≤0.1.

由于在ECR共振区内离解力强,所以离子生成尤其旺盛。 ECR resonance region due to the strong dissociation of, in particular, the ion generating strong. 另一方面,ECR共振区以外,离解力比ECR共振区弱,原子团的生成旺盛。 On the other hand, outside the ECR resonance region, the force is weaker than the dissociation ECR resonance region, strong radicals generated. 通过调整ECR共振区的宽度和加在上部电极上的高频功率,可以更加独立地控制离子和原子团的发生,使其更适合于试样处理要求。 By adjusting the width of the resonance region ECR and processing high-frequency power to the upper electrode can be controlled more independently of the ions and radicals occur, making it more suitable sample processing requirements.

本发明的另一特征在于下面结构:等离子处理机具有真空处理室;用于放置要在真空处理室内处理的试样的试样台;以及包括高频电源在内的等离子体生成装置。 Another feature of the present invention is characterized by the following structure: a plasma processor having a vacuum processing chamber; means for placing a sample to the sample table in a vacuum processing chamber processing; and a high-frequency power generating apparatus including a plasma. 在等离子体处理装置中,还具有:静电吸附装置,它利用静电吸附力把试样固定在试样台上;以及加脉冲偏压装置,用于在试样上加脉冲偏压;作为高频电源加上10MHz-500MHz的高频电压,同时把真空处理室的压力减小到0.5-4.0Pa。 In the plasma processing apparatus further includes: an electrostatic adsorption means, which by electrostatic attraction to the sample on a sample stand; and pulsed biasing means for applying a pulse bias voltage on the sample; high-frequency power plus high frequency voltage 10MHz-500MHz, and while the pressure in the vacuum processing chamber is reduced to 0.5-4.0Pa.

本发明的另一特征在于,具有真空处理室、为放置要在真空处理室内处理的试样所用的试样台以及等离子体生成装置。 Another feature of the present invention comprising a vacuum processing chamber, generating means to be placed to the sample table vacuum treated sample processing chamber and a plasma is used. 在这种等离子体处理机中还具有:静电吸附装置,用于依靠静电吸附力来把试样固定在试样台上;加脉冲偏压装置,它连接在试样台上,用于在试样台上加脉冲偏压;以及电压控制装置,用于抑制电压的变化,防止其随着加脉冲偏压而根据静电吸附装置的静电吸附容量发生相应的变化。 In such a plasma processor also has: an electrostatic adsorption device for electrostatic attraction force relies on the sample on a sample stand; pulsed biasing means, which is connected on the sample stage, for again comp stage pulsed bias voltage; and a voltage control means for suppressing the change in voltage, to prevent a corresponding change its electrostatic adsorption capacity of the electrostatic adsorption device biased with the applied pulse based on the occurrence.

本发明的另一特征在于提供这样一种等离子体处理方法,其中包括以下处理程序步骤:把试样放置在真空处理室内的互相对置的一对电极中的一个电极上;利用静电吸附力把试样固定在电极上;把腐蚀气体送入已放置试样的处理室内;对处理室抽真空,使其气压降低到0.5-4.0Pa;加上10MHz-500MHz的高频电压,在上述压力下使腐蚀气体变成等离子体;利用等离子体来腐蚀试样;以及在上述一个电极上加脉冲偏压。 Another feature of the invention is to provide a plasma processing method, the processing procedure including the following steps: the sample is placed between a pair of electrodes opposed to each other in a vacuum chamber of a processing electrode; by electrostatic attraction to sample immobilized on the electrode; the etching gas has been placed into the sample processing chamber; processing chamber is evacuated, to a pressure reduction to 0.5-4.0Pa; plus 10MHz-500MHz frequency voltage, the pressure in the above-described an etchant gas into a plasma; etching using plasma samples; and a pulse bias applied to said one electrode.

本发明的另一特征在于按照以下程序步骤来对上述试样中的绝缘膜(例如SiO2、SiN、BPSG等)进行等离子处理,这些步骤是:把试样放置在互相对置的二个电极中的一个电极上;利用静电吸附力把放上的试样固定到上述电极上;把腐蚀气体送入已放置试样的处理室内的周围气体中;使已送入的腐蚀气体变成等离子体;用该等离子体来腐蚀上述试样;腐蚀时在上述一个电极上加上述脉冲偏压,该偏压具有250V-800V的脉冲宽度和0.05-0.4的占空比。 Another feature of the present invention is that the plasma treatment is performed on the insulating film in the sample (e.g., SiO2, SiN, BPSG, etc.) according to the following procedure steps, which are: the sample was placed in a two electrode opposed to each other in an upper electrode; by electrostatic attraction is placed on the sample fixed to the electrode; etching gas into the process chamber has been placed around the gas sample; an etchant gas is fed into a plasma; with the plasma to etch the sample; adding the pulse bias to the electrode when the one corrosion, the bias voltage having a pulse width of 250V-800V and the duty ratio of 0.05-0.4.

若采用本发明的另一特征,则可在试样台上加规定特性的脉冲偏压电源,该试样台具有静电吸附装置,静电吸附装置上具有静电吸附介质层,这样可充分控制试样温度,稳定地处理所需的微细图形。 If a further feature of the present invention may be added a predetermined characteristic on the sample stage pulsed bias power supply, the electrostatic attraction apparatus having a sample stage having electrostatically attracted to the electrostatic adsorption device dielectric layer, so that the sample can be sufficiently controlled temperature, stably desired fine pattern processing. 也就是说,该处理机具有用静电吸附力把试样固定到试样台上的静电吸附装置和连接试样台并把脉冲偏压加到试样台上的加脉冲偏压装置,周期为0.2-2μs正向脉冲部分的占空比二分之一的脉冲偏压,通过电容元件加到试样上。 That is, the electrostatic adsorption device having a processor and connected to the sample table by an electrostatic attraction force to the sample holder and the sample stage pulsed bias applied to the specimen mount pulsed biasing means cycle one of the duty ratio of pulse bias 0.2-2μs positive half pulse part, by the capacitive element is added to the sample.

若采用本发明的另一特征,则电压抑制装置,用于抑制电压变化,即防止电压随着加脉冲偏压而与静电吸附装置的静电吸附容量相对应地发生变化,其构成方法是:利用脉冲一个周期中的静电吸附作用使加在介质层两端上的电压变化小于脉冲偏压强度的二分之一。 If a further feature of the present invention employed, the voltage suppression means for suppressing a voltage variation, i.e., to prevent a pulse bias voltage as the change should be applied to the electrostatic adsorption capacity with the electrostatic adsorption means is opposed is configured: using electrostatic adsorption cycle so that a pulse is applied to the both ends of the dielectric layer is smaller than the voltage change of one-half the intensity of the pulsed bias. 具体来说,也可采用这样的方法,即减小下部电极表面上的介质静电吸膜(chuck film)的厚度,介质采用介电常数大的材料。 Specifically, a method may be employed, i.e., to reduce the thickness of the dielectric film electrostatic suction (chuck film) on the surface of the lower electrode, the dielectric material of higher permittivity. 或者,缩短脉冲偏压周期,抑制介质层两端上的电压上升。 Alternatively, shortening the pulse bias period, the voltage rise suppression on both ends of the dielectric layer.

若采用本发明的另一特征,则进一步在试样腐蚀时在一个电极上加250V-1000V的脉冲宽度和0.05-0.4占空比的脉冲偏压,这样可以提高对试样中的绝缘膜(例如SiO2、SiN、BPSG等)的等离子处理的选择性等。 If a further feature of the present invention employs, in one of the electrodes is further applied 250V-1000V pulse width and duty cycle pulse bias 0.05-0.4, so that the insulating film can be improved in the sample to the sample at the time of etching ( e.g. selectivity SiO2, SiN, BPSG, etc.) of the plasma treatment.

本发明的另一特征在于具有下列结构:等离子处理机具有真空处理室、用于放置要在真空处理室内处理的试样的试料台,以及等离子体生成装置。 Another feature of the present invention has the following structure: a vacuum plasma processor having a processing chamber, for placing a sample to the sample processing table in a vacuum processing chamber, and a plasma generating apparatus.

在等离子处理装置中,还具有:静电吸附装置,它借助静电吸附力把试样固定在试样台上;加偏压装置,用于把偏压加到试样上;原子团供给装置,它具有预先分解原子团发生用气体的装置,用于供应所需数量的原子团;供气装置,用于向真空处理室供应离子发生用气体;以及等离子体生成装置,用于在真空处理室中生成等离子体,利用SiO2作为试样。 In the plasma processing apparatus further includes: an electrostatic adsorption device, which by means of electrostatic attraction force to the sample on a sample stand; biasing means for the bias voltage is applied to the sample; radicals supplying means having pre-generating apparatus radicals decomposition gas, a desired number of radicals for supplying; gas supply means for gas supply occurs to the vacuum processing chamber ions; and a plasma generating means for generating plasma in the vacuum processing chamber , using SiO2 as a sample.

本发明的另一特征在于,在具有真空处理室、为放置要在真空处理室内处理的试样所用的试样台、以及包含高频电源的等离子体生成装置的等离子体处理装置中,还具有:静电吸附装置,用于借助静电吸附力把试样固定到试样台上;加脉冲偏压装置,用于把脉冲偏压加到试样上;原子团发生用等离子体供应装置,用于在上述真空处理室内预先把原子团发生用气体变成等离子体,并供应所需数量的原子团;以及上述等离子体生成装置,用于供应离子发生用气体,生成等离子体,对上述高频电源加10MHz-500MHz的高频电压,同时使真空处理室的压力降低到0.5-4.0Pa。 Another feature of the invention is characterized in having a vacuum processing chamber, to generate a sample in a sample table vacuum processing chamber used in the process, and a plasma comprises high frequency power source to be placed in a plasma processing device further includes : electrostatic adsorption means by means of the electrostatic adsorption force for the sample was fixed on the sample table; pulsed biasing means for the pulsed bias applied to the specimen; radicals-generating plasma supply means for the vacuum pre-treatment chamber the radicals into the plasma-generating gas, and to supply the required quantity of radicals; and said plasma generating means for supplying a plasma generating gas for generating plasma, power is supplied to the high-frequency 10MHz- voltage frequency of 500MHz, while the pressure in the vacuum processing chamber is reduced to 0.5-4.0Pa.

若采用本发明的另一特征,则可独立地控制离子和原子团的量和质,在具有静电吸附装置(其中有静电吸附介质层)的试样台上加上规定特性的脉冲状脉冲电源,从而能充分控制试样温度,稳定地处理所需微细图形。 Another feature of the present invention when employed, can be controlled independently of the quantity and quality of ions and radicals, having the electrostatic adsorption means (including electrostatic adsorption medium layer) plus the sample stage pulsed power pulse of predetermined characteristics, so that it can fully control the sample temperature, a desired fine pattern process stably.

能进一步独立地控制离子和原子团的量和质,获得狭窄的离子能量分布,能稳定地、准确地提高等离子处理的选择性等。 Ions can be further controlled independently and the quantity and quality of the radicals, to obtain a narrow ion energy distribution can be stably and accurately improve the selectivity of the plasma processing, and the like.

再者,电压控制装置,可独立地控制离子和原子团的量和质,能抑制电压随着加脉冲电压而与静电吸附装置的静电吸附容量相对应地发生变化,其结构方式是,利用脉冲一个周期中的静电吸附作用使介质层两端上的电压变化小于脉冲偏压大小的二分之一。 Further, the voltage control means can independently control the quantity and quality of ions and radicals, can be suppressed by applying a pulse voltage as the voltage change should occur with the electrostatic adsorption capacity relative to the electrostatic adsorption device, the structure way, the use of a pulse electrostatic adsorption cycle changing the voltage on both ends of the dielectric layer is less than one-half the size of the bias pulse. 具体来说,可减小下部电极表面上的介质静电吸附膜的厚度,介质采用介电常数大的材料。 In particular, the reduced thickness of the medium may be electrostatically adsorbed on the surface of the lower electrode film, a higher permittivity dielectric material. 或者缩短脉冲偏压周期,抑制介质层两端上的电压上升。 Shortening the pulse period or the bias voltage, the voltage rise suppression on both ends of the dielectric layer.

若采用本发明的另一特征,则可独立地控制离子和原子团的量和质,在试样腐蚀时、在一个电极上加上250V-1000V的脉冲宽度和0.05-0.4的占空比的脉冲偏压,以此来提高试样中的绝缘膜(例如SiO2、SiN、BPSG等)与底层的等离子处理的选择性等。 If a further feature of the present invention employed, the quantity and quality can be controlled independently and the ion radicals, when etching the sample, one electrode on the pulse width plus the pulse of 250V-1000V, and the duty ratio of 0.05-0.4 bias, in order to improve an insulating film (e.g., SiO2, SiN, BPSG, etc.) selective plasma treatment or the like to the underlying sample.

若采用本发明的另一特征,则可独立地控制离子和原子团的量和质,等离子体发生用的高频电源采用10MHz-500MHz的高频电压,处理室内的气压设定为0.5-4.0Pa。 If a further feature of the present invention employed, the quantity and quality can be controlled independently and the ion radicals, with the high frequency power supply for plasma generation high frequency voltage of 10MHz-500MHz, the process chamber pressure is set to 0.5-4.0Pa . 这样可以获得稳定的等离子体。 So you can get a stable plasma. 并且,利用这种高频电压可以改善气体等离子体的电离,便于控制试样加工时的选择比。 And, with this high-frequency voltage can be improved ionized gas plasma, the ratio selected to facilitate processing of the control sample.

[图1]是作为本发明的一个实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG 1] is a longitudinal sectional view of a two-electrode type plasma etching apparatus as an embodiment of the present invention.

[图2]表示在加有能生成电子回旋加速共振的磁场的状态下,改变为产生等离子的高频电源的频率时等离子密度变化的一例。 [2] shows a state where the applied electron cyclotron resonance can generate a magnetic field, one case of changing the frequency of the ion density in the high frequency power source to generate plasma, and the like.

[图3]表示在回旋加速共振时和无共振时,电子从高频电场得到的能量增益K的状况。 [FIG. 3] and when no resonance cyclotron resonance, electrons resulting from the high frequency electric field energy gain K status.

[图4] [Figure 4]

表示把磁控管放电电极的上电极接地,在下部电极上加上磁场B的同时又加上高频功率时磁场强度、和试样上感应的离子加速电压VDC、及试样内的感应电压的误差ΔV的关系。 It represents the upper electrode is grounded magnetron discharge electrode, with the magnetic field B on the lower electrode together with the magnetic field strength at the same time, induced on the specimen and the ion acceleration voltage VDC, and voltages induced in the sample when the high-frequency power the relationship of error ΔV.

[图5]是图1的等离子刻蚀装置的磁场特性说明图。 [Figure 5] is a magnetic characteristic of the plasma etching apparatus of FIG. 1 explained in FIG.

[图6]是图1的等离子刻蚀装置的ECR区的说明图。 [FIG. 6] is a view like FIG described ECR plasma etching apparatus 1 of the region.

[图7]是本发明的脉冲偏压电源中使用的理想的输出波形的例子。 [FIG. 7] is an example of an ideal output waveform of a pulse bias power supply used in the present invention.

[图8]是脉冲占空比(T1/T0)为一定,使T0变化时,试样表面的电位波形和离子能量的概率分布图。 [FIG. 8] is a pulse duty factor (T1 / T0) is a constant, T0 make changes, and the probability of the potential waveform of the ion energy distribution of the sample surface.

[图9]是脉冲占空比为一定,使T0变化时,试样表面的电位波形和离子能量的概率分布图。 [FIG. 9] is a constant pulse duty cycle, changes the T0, and the probability of the potential waveform of the ion energy distribution of the sample surface.

[图10]是脉冲断路(T0-T1)期间和静电吸附膜两端间所产生的电压的一个周期中的最大电压Vcm的关系图。 [FIG. 10] is a graph of the maximum voltage Vcm of a pulse period during disconnection (T0-T1) and the voltage between both ends of the electrostatic adsorption film is produced.

[图11]是脉冲占空比和(VDC/Vp)的关系图。 [FIG. 11] is a pulse duty ratio and (VDC / Vp) in relation to FIG.

[图12]表示对用氯气等进行离子化时硅和氧化膜的刻蚀速率ESi及ESiO2的离子能量的依存性。 [12] showing the dependence of the ion energy during the etching rate with chlorine gas to be ionized and a silicon oxide film and ESiO2 the ESi.

[图13]表示作为氧化膜的刻蚀例,当把CF4气体等离子化时,氧化膜和硅的刻蚀速率ESiO2及ESi与离子能量分布的关系。 [13] showing the oxide film as an etching embodiment, when the ionized gas CF4, the etching rate of the silicon oxide film and ESi with ESiO2 and ion energy distribution relationship.

[图14]是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 14] is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图15] [FIG 15]

是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 It is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图16]是图15的等离子刻蚀装置的磁场分布特性的说明图。 [FIG. 16] is a diagram illustrating a magnetic field distribution characteristic and other ion etching apparatus 15 described in FIG.

[图17]是图15的等离子刻蚀装置的ECR区的说明图。 [FIG. 17] is a diagram for explaining other regions ECR ion etching apparatus 15.

[图18]是作为本发明其他实施例的等离子刻蚀装置的纵截面图。 [FIG. 18] is a longitudinal sectional view of another embodiment of the present invention is a plasma etching apparatus.

[图19]是图18的等离子刻蚀装置的磁场分布特性的说明图。 [FIG. 19] is an explanatory other magnetic-field distribution view of a plasma etching apparatus 18 of FIG.

[图20]是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 20] is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图21]是本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 21] is a longitudinal sectional view of another two-electrode type embodiment of the present invention ion etching apparatus.

[图22]是图21的等离子刻蚀装置的磁场分布特性说明图。 [FIG. 22] is a magnetic-field distribution in the plasma etching apparatus of FIG. 21. FIG.

[图23]是作为本发明的其他实施例的二电极型等离子刻蚀装置的重要部分的横截面图。 [FIG. 23] is a cross-sectional view of an important part of another embodiment of two-electrode type embodiment of the present invention the ion etching apparatus.

[图24]是图23的等离子刻蚀装置的纵截面图。 [FIG. 24] is a longitudinal sectional view of a plasma etching apparatus of FIG. 23 and the like.

[图25]是磁场形成装置的其他实施例示图。 [FIG. 25] is a view illustrating another embodiment of the magnetic field forming means.

[图26]是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 26] is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图27]是作为本发明的其他实施例的二电极型的等离子刻蚀装置的纵截面图。 [FIG. 27] is a longitudinal sectional view of another two-electrode type plasma etching apparatus of an embodiment of the present invention.

[图28]是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 28] is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图29]是图28的等离子刻蚀装置的磁场分布特性的说明图。 [FIG. 29] is a magnetic plasma etching apparatus of FIG. 28 is an explanatory view showing distribution characteristics.

[图30]是作为本发明的其他实施例的二电极型等离子刻蚀装置的纵截面图。 [FIG. 30] is a longitudinal sectional view of a two-electrode type as another embodiment of the present invention, an ion etching apparatus.

[图31]是改良后的图1所示的二电极型等离子刻蚀装置的其他实施例的纵截面图。 [FIG. 31] is a longitudinal sectional view of another embodiment of the improved two-electrode type shown in FIG. 1, an ion etching apparatus.

[图32]图32是产生等离子电源的频率和稳定放电最低气压的关系图。 Minimum pressure diagram and frequency stability [FIG 32] FIG 32 is a power supply generating a plasma discharge.

[图33]是脉冲偏压电源的频率和累积功率之间的关系示图。 [FIG. 33] is a diagram illustrating the relationship between the cumulative frequency power pulses and the bias power supply.

[图34]是把本发明用于外部能量供给放电方式中的电感耦合放电方式无磁场型等离子刻蚀装置中的例子的纵截面图。 [FIG. 34] is used in the present invention is a longitudinal sectional view showing an example of inductive coupling discharge method described discharge energy supply external non-magnetic field type plasma etching apparatus.

[图35]是作为本发明的其他实施例的等离子刻蚀装置的纵截面图。 [FIG. 35] is a longitudinal sectional view of another embodiment of the present invention as a plasma etching apparatus.

[图36]是本发明用于微波等离子处理装置时部分纵截面的正面图。 [FIG. 36] is a microwave plasma processing apparatus according to the present invention, a front portion of a longitudinal section of FIG.

[图37]是作为本发明的其他实施例的等离子刻蚀装置的纵截面图。 [FIG. 37] is a longitudinal sectional view of another embodiment of the present invention as a plasma etching apparatus.

[图38]是作为本发明的其他实施例的等离子处理装置的一部分纵截面的正面图。 [FIG. 38] is a front view of a part of a longitudinal section as another embodiment of the present invention is a plasma processing apparatus.

[图39]是作为本发明的其他实施例的可以单独控制离子和原子团的二电极型等离子刻蚀装置的纵截面图。 [FIG. 39] is a longitudinal sectional view of another can be individually controlled as ions and radicals of the two electrodes type plasma etching apparatus of an embodiment of the present invention.

[图40]是作为本发明的其他实施例的能够单独控制离子和原子团的二电极型等离子刻蚀装置的部分详细图。 [FIG. 40] is as another embodiment of the present invention can be individually controlled partial detailed view of the ion and the two-electrode type of radical ion etching apparatus.

若采用本发明,则可以提供在φ300mm以上的大直径试样上,容易加工出微细精密的图形,而且微细加工时的选择比也可提高的等离子处理装置及等离子处理方法。 According to this invention, may be provided on a large diameter of 300 mm or more samples, readily machined precision fine pattern, and the selected ratio of fine processing can be improved plasma processing apparatus and plasma processing method. 还能提供,在大直径试样的整个面上能进行均匀而高速的处理、特别是氧化膜处理的等离子处理装置及其处理方法。 Also provided, capable of uniform and high-speed processing of large diameter over the entire surface of the sample, especially the plasma processing apparatus and processing method of processing an oxide film and the like.

若采用本发明,则还能提供能提高对试样中的绝缘膜(例如SiO2、SiN、BPSG等)的等离子处理的选择性的等离子处理装置及等离子处理方法。 According to this invention, it can also provide improved selectivity of the insulating film in the sample (e.g., SiO2, SiN, BPSG, etc.) of a plasma processing apparatus and plasma processing method for plasma processing.

再者还能够提供,可控制性好并且能量分布窄的,等离子处理的选择性高的等离子处理装置及等离子处理方法。 Further also possible to provide, good controllability and energy distribution may be narrow, high selectivity like plasma processing the plasma processing apparatus and plasma processing method or the like.

还可提供,在使用具有静电吸附用介质层的试样台时,可控制性好、离子能量分布窄、等离子处理选择性等高的等离子处理装置及等离子处理方法。 May also be provided, when a sample stage having a dielectric layer with electrostatic attraction, may be well controlled, narrow ion energy distribution, high selectivity of plasma processing the plasma processing apparatus and plasma processing method.

再者,还可提供通过独立控制离子和原子团的质和量,可降低等离子处理装置的处理室内的压力,容易进行微细图形的精密加工,并且可提高微细加工时的选择比的等离子处理装置及等离子处理方法。 Further, may also be provided by the independent control of the ion and the quality and quantity of radicals, can be reduced and so pressure in the processing chamber plasma processing apparatus, easy precision machining fine pattern, and may improve the selection ratio of the isochronous microfabrication plasma processing apparatus and plasma processing method.

再者,还可提供,通过独立控制离子和原子团的质和量,可提高对试样中的绝缘膜(例如SiO2、SiN、BPSG等)的等离子处理的选择性的等离子处理装置及等离子处理方法。 Further, may also be provided by the independent control of the ion and the quality and quantity of radicals, the plasma processing apparatus selectively sample the insulating film (e.g., SiO2, SiN, BPSG, etc.) of the plasma process or the like and a plasma processing method can be improved .

以下说明本发明的实施例。 Embodiments of the present invention described below. 首先图1中表示第1实施例,即本发明用于对面电极型等离子体腐蚀机。 1 shows a first embodiment of the present invention, i.e., the opposite electrode for the first type plasma etching machine of FIG.

在图1中,作为真空容器的处理室10具有由上部电极12和下部电极15构成的一对对面电极。 In Figure 1, a processing chamber of the vacuum vessel 10 has a pair of surface electrode composed of an upper electrode 12 and the lower electrode 15. 在下部电极15上放置试样40。 15 is placed on the lower electrode 40 samples. 在处理Ф300mm以上的大试样时为使试样面上的压力差不超过10%,两个电极12、15之间的间隙最好设定在30mm以上。 When the above process is the large specimen Ф300mm the pressure difference on the sample surface is not more than 10%, the gap between the two electrodes 12 and 15 is preferably set to 30mm or more. 并且,为减少氟原子、分子和离子,从有效利用上部、下部电极表面上的反应考虑,该间隙宜设定为100mm以下,最好是60mm以下。 And, to reduce the fluorine atoms, molecules and ions, the effective use of the upper portion, a lower surface of the electrode reaction on the consideration, the gap should be set to be 100mm or less, preferably 60mm or less. 在上部电极12上连接高频电源16,以便通过匹配箱162提供高频能量。 High frequency power source 16 is connected to the upper electrode 12, so as to provide high-frequency energy via a matching box 162. 161是高频电源调制信号源。 161 is a high-frequency power source of a modulation signal. 在上部电极12和地之间连接滤波器165,该滤波器165对偏压电源17的频率成分是低阻抗;对高频电源16的频率成分是高阻抗。 Connection between the upper electrode 12 and the filter 165, the filter 165 filters the frequency component of the bias power source 17 is a low impedance; the frequency component of the high frequency power source 16 is a high impedance.

上部电极12的表面积大于被处理试样40的面积,通过加偏压电源17可使电压高效率地加到试样面上的外膜上。 Surface area of ​​the upper electrode 12 is larger than the area of ​​the sample 40 to be processed by the power supply bias voltage can be efficiently applied to the outer membrane surface of a sample 17.

在上部电极12的下侧表面上设置了上部电极罩30作为除氟板,它由硅、碳或SiC构成。 On the underside surface of the upper electrode 12 is provided an upper cover 30 as the fluoride electrode plate, which is made of silicon, carbon or SiC. 并且,在上部电极12的上部设置气体导入室34,其中包括气体扩散板32,用于使气体按规定分布状态进行扩散。 And, in an upper portion of the upper electrode 12 gas introduction chamber 34 is provided, which includes a gas diffusion plate 32, for gas diffusion predetermined distribution state. 试样腐蚀等处理所需的气体,从供气部36经过气体导入室34的气体扩散板32、上部电极12和上部电极罩30上的孔38送入处理室10内。 Desired sample processing such as etching gas, the gas from the gas supply unit through the introduction chamber 34 of the gas diffusion plate 3236, upper electrode 3012 and the aperture in the cover 38 of the upper electrode 10 into the processing chamber. 通过阀门14与外室11相连接的真空泵18对外室11进行真空排气,把处理室10的气压调整到试样处理所需的压力。 Evacuated by the vacuum pump 18 outside the valve chamber 11 and outer chamber 14 is connected to 11, the pressure chamber 10 is adjusted to a process pressure required for processing a sample. 为了提高等离子体密度同时使处理室中的反应均匀一致,在处理室10的周围设置了抑制放电用的圆环37。 In order to increase the plasma density in the chamber while the reaction process is uniform around the processing chamber 10 is provided with a discharge suppression ring 37. 在抑制放电用的圆环37上设置了排气用的间隙。 Suppressing discharge in the annular gap is provided on the exhaust 37.

在上部电极12的上部设置了磁场形成装置200,用于形成与试样40的面相平行的磁场,同时该磁场垂直于在电极间形成的电场E。 In the upper portion of the upper electrode 12 is provided with magnetic field forming means 200 for forming the surface of the sample 40 parallel to the magnetic field, while the magnetic field perpendicular to the electric field formed between the electrodes E. 磁场形成装置200具有磁心201,电磁线圈202和绝缘体203。 Magnetic field forming means 200 having a core 201, an electromagnetic coil 202 and the insulator 203. 上部电极12的结构材料是非磁性导电体,例如铝和铝合金。 A non-magnetic conductive material of an upper electrode structure 12, such as aluminum and aluminum alloys. 处理室10的结构材料是非磁性材料,例如铝和铝合金、氧化铝、石英、SiC等。 The processing chamber 10 of non-magnetic structural material, such as aluminum and aluminum alloys, alumina, quartz, SiC and the like. 磁心201采用轴旋转对称结构,其断面大体上呈E字型,分为磁心部201A、201B,形成的磁场B是,磁通从处理室10的中央上部射向上部电极12,沿上部电极12大致平行地向外圆方向延伸。 Core structure 201 using the rotational symmetry axis, which substantially E-shaped cross-section, the core is divided into portions 201A, 201B, formed is a magnetic field B, the magnetic flux is directed from the central upper portion of the upper electrode 12 of the processing chamber 10, along the upper electrode 12 outwardly extending substantially parallel to the circular direction. 由磁场形成装置200在两电极间生成的磁场具有10高斯以上110高斯以下、最好是17高斯以上72高斯以下的静磁场、或低频磁场(1KHz以下)的产生回旋加速共振的部分。 200 is generated between the electrodes by the magnetic field generated by the magnetic field forming device having at least 10 gauss 110 gauss or less, more preferably 17 gauss static magnetic field of 72 gauss or less, or a low frequency magnetic fields (1KHz less) cyclotron resonance portion.

产生回旋加速共振的磁场强度Bc(高斯),众所周知,与等离子体生成高频频率f(MHz)之间具有Bc=0.357×f(MHz)的关系。 Generating cyclotron resonance magnetic field intensity Bc (gauss), is well known, the relationship with Bc = 0.357 × f (MHz) between the high frequency f (MHz) plasma generation.

本发明中的2个电极12、15是互相对置的一对电极,实质上只要二者互相平行即可,根据等离子体生成特性等要求,电极12、15也可以具有一定的凹面或凸面。 In the present invention, the two electrodes 12 and 15 is a pair of electrodes opposed to each other, as long as both are substantially parallel to each other can, according to the plasma generation characteristic requirements, the electrodes 12, 15 may have a certain concave or convex. 其特征是,这种双电极容易使电极间的电场分布均匀一致,通过提高与该电场直交的磁场的均匀性,比较容易借助于回旋加速共振作用均匀地生成等离子体。 Characterized in that, this two-electrode electric field between the electrodes tends to uniform distribution by increasing the uniformity of the magnetic field perpendicular to the electric field, by means of cyclotron resonance is easier to uniformly generate the plasma effect.

放置并固定试样40的下部电极15具有双极式静电吸盘20。 The lower electrode 40 is placed and fixed to the sample 15 having a bipolar electrostatic chuck 20. 也就是说,下部电极15由外侧的第1下部电极15A、和通过绝缘体21设置在其内侧上部的第2下部电极15B构成,在第1、第2两个下部电极的上表面上设置了静电吸附用介质层(以下简称静电吸附膜)22。 That is, the lower electrode 15, and a second lower electrode 15B is constituted by an upper portion inside the first lower electrode 15A by the outside insulator 21 is provided, is provided in the first electrostatic, two upper surface of the lower electrode 2 adsorption (hereinafter referred to as electrostatic adsorption film) 22 with a dielectric layer. 在第1、第2两个下部电极之间,通过高频成分滤波用的线圈24A、24B连接直流电源23。 Between the first and second two lower electrodes, the high frequency component by filtering with coils 24A, 24B connected to the DC power supply 23. 在两个下部电极之间加上直流电压,使第2下部电极15B一侧为正极。 A lower electrode between the two d.c. voltage, the lower side of the second electrode is a positive electrode 15B. 这样,通过静电吸附膜22作用于试样40和两下部电极之间的库仑力能把试样40吸附并固定在下部电极15上。 Thus, an electrostatic adsorption film 22 by Coulomb force acting between the sample can lower electrode 40 and the two suction and the sample 40 is fixed on the lower electrode 15. 静电吸附膜22可以使用氧化铝和氧化铝与氧化钛相混合的介质等。 22 can use electrostatic adsorption film dielectric alumina and alumina mixed with titanium oxide and the like. 并且,电源23使用数百伏的直流电源。 The power supply 23 uses several hundred volts DC power.

另外,为供应20V-1000V的宽度的脉冲偏压所用的脉冲偏压电源17,分别通过消除直流成分的隔直流电容器19A、19B,连接到下部电极15(15A、15B)上。 Further, for the supply of the pulse width of the bias of 20V-1000V used pulsed bias power supply 17, respectively, through DC blocking capacitor to eliminate a DC component 19A, 19B, connected to the lower electrode 15 (15A, 15B) on.

在此之前,对静电吸盘按双极方式进行了说明,但也可采用其他方式的静电吸盘,例如单极式和n极式(n≥3)。 Prior to this, a bipolar electrostatic chuck carried out in the manner described, the electrostatic chuck may also be used in other ways, such as monopolar electrodes and n of formula (n≥3).

在进行腐蚀处理时,欲处理的试样40被放置在处理室10的下部电极15上,被静电吸盘20吸附。 During the etching process, the sample 40 to be processed is placed on the lower electrode 10 of the processing chamber 15, the electrostatic chuck 20 by suction. 另一方面,试样40腐蚀处理时所需的气体从供气部36经过气体导入室34被送入到处理室10内。 On the other hand, the processing required for the gas sample 40 from the etching gas supply unit 36 ​​through the gas introduction chamber 34 is fed into the process chamber 10. 用真空泵18对外室11进行真空排气,使处理室10的气压降低到例如0.4-4.0Pa(帕斯卡)。 Evacuated with a vacuum pump 18 outside the chamber 11, the pressure of the processing chamber 10 is reduced to, for example 0.4-4.0Pa (pascals). 然后,从高频电源16输出30MHz-300MHz,最好是50MHz-200MHz的高频功率,使处理室10的处理气体变成等离子体。 Then, the output from the high frequency power source 16 30MHz-300MHz, preferably of 50MHz-200MHz frequency power, process gas into the plasma processing chamber 10.

利用30-300MHz高频功率和由磁场形成装置200生成的10高斯以上110高斯以下的静磁场的部分,在上部电极12和下部电极15之间产生电子回旋加速共振,这时,生成0.4-4.0Pa的低气压高密度等离子体。 30-300MHz using high-frequency power and the static magnetic field portion 110 less than 10 gauss 200 gauss is formed by the magnetic field generating apparatus, electron cyclotron resonance is generated between the upper electrode 12 and the lower electrode 15, then, generates 0.4-4.0 Pa low-pressure high-density plasma.

另外,从脉冲偏压电源17向下部电极15加脉冲偏压,该偏压为电压20V-1000V,周期为0.1μs-10μs,最好是0.2μs-5μs,正脉冲部分的占空比为0.05-0.4,以控制等离子体中的电子和离子,对试样40进行腐蚀处理。 Further, the pulse bias is pulsed bias power supply 15 to the lower electrode 17, the bias voltage is 20V-1000V, period of 0.1μs-10μs, preferably 0.2μs-5μs, the positive part of the pulse duty ratio is 0.05 -0.4 to control the plasma electrons and ions, the sample 40 for etching.

腐蚀气体,在由气体扩散板32使其达到所需的分布后,通过上部电极12和上部电极罩30上制作的孔38注入到处理室10内。 Etching gas, the gas diffusion After allowing the plate 32 to achieve the desired distribution, the hole 12 through the upper electrode cover 30 and the upper electrode 38 is made is injected into the process chamber 10.

再者,上部电极罩30采用碳或硅,或者含有碳或硅的材料,以便消除氟和氧成分,提高光刻胶或硅等与底层的选择比。 Further, an upper electrode cover 30 made of carbon or silicon, or a material containing carbon or silicon, in order to eliminate the fluorine and oxygen content, improve the selectivity of the photoresist or the underlying silicon and the like.

为了提高大试样的微细加工效率,等离子体发生用高频电源16可采用更高的频率,以提高在低气压区内放电的稳定性。 In order to improve the efficiency of large microfabrication specimens, high frequency power supply 16 can be a higher frequency plasma generation, in order to improve the stability of the low pressure discharge zone. 本发明为了在0.4Pa-4Pa的低气压下以5×1010-5×1011cm-3的等离子体密度而且不出现气体离解过度现象的条件下获得对大试样均匀的等离子体,在上部电极12上连接等离子生成用高频电源16。 To obtain a uniform plasma under conditions of large samples of the present invention and in order not to appear as a gas plasma density 5 × 1010-5 × 1011cm-3 at a low pressure of 0.4Pa-4Pa excessive dissociation phenomena, the upper electrode 12 connecting the plasma generation high frequency power supply 16. 另一方面,在放置试样的下部电极15上连接离子能量控制用偏压电源17,将这两个电极间的距离设定为30-100mm。 On the other hand, the ion energy is connected sample was placed on the lower electrode 15 by controlling the bias power supply 17, the distance between these two electrodes is set to 30-100mm.

等离子体生成用高频电源16采用30MHz-300MHz,最好是采用50MHz-200MHz的VHF,利用10高斯以上110高斯以下,最好是17高斯以上72高斯以下的静磁场或低频(1KHz以下)磁场部分的相互作用,使上部电极12和下部电极15之间产生电子回旋加速共振。 Plasma generation using the 30MHz-300MHz frequency power supply 16, preferably of 50MHz-200MHz using the VHF, using the above 10 gauss 110 gauss or less, preferably 72 gauss or less than 17 gauss of the static magnetic field or low frequency (1KHz hereinafter) field interaction portion of the upper electrode to produce electron cyclotron resonance between the 12 and the lower electrode 15.

在图2中表示在加上产生电子回旋共振的磁场的状态下,改变生成等离子体的高频电源的频率时的等离子体密度变化的例子。 It represents the coupled electron cyclotron resonance magnetic field generating state, an example of the plasma density plasma is generated when the frequency of high-frequency power change is changed in FIG. 供给气体为氩气中加C4F82-10%的气体,处理室的压力为1Pa。 Supplying argon gas is added C4F82-10% gas, the pressure of the processing chamber 1Pa. 等离子体密度以f=2450MHz的微波ECR时为1,是标准值。 The plasma density f = microwave ECR 2450MHz is 1, is a standard value. 图中虚线表示无磁场时得到的结果。 The dotted line shows the results obtained when no magnetic field.

在50MHz≤f≤200MHz时,等离子体密度比微波ECR时低1-2个数量级。 When 50MHz≤f≤200MHz, 1-2 orders of magnitude lower than the plasma density microwave ECR. 并且气体离解也较少,发生的不需要的氟原子/分子和离子也低1个数量级以上。 And a gas dissociation fewer unwanted occurring fluorine atoms / molecules and ions are also an order of magnitude lower. 利用该VHF频带的频率和回旋加速共振,可以获得等离子体密度绝对值为5×1010cm-3以上的适当的高密度等离子体,在0.4-4Pa的低压下可以高速进行处理。 By using the VHF band frequency and a cyclotron resonance plasma density can be obtained absolute value is 5 × 1010cm-3 or more suitable high density plasma processing at a high speed low pressure 0.4-4Pa. 而且,由于气体离解也不过度,因此,对SiO2等绝缘膜来说,与Si和SiN等底层的选择比没有明显降低。 Further, since the dissociation of the gas is not excessive, and therefore, an insulating film of SiO2 or the like, the Si and SiN, and the bottom selection ratio not significantly reduced.

在50MHz≤f≤200MHz时,与过去的13.56MHz的平行平板电极相比气体离解稍多,但由此形成的氟原子/分子和离子增加极少,这种状况可通过在电极表面和容器壁面上设置含硅和碳的物质而得到改善。 When 50MHz≤f≤200MHz, past the parallel plate electrodes 13.56MHz gas from solution compared slightly, but the thus formed fluorine atoms / molecules and ions increases very little, this situation can be obtained by the electrode surface and the container wall It has been improved and is provided on the silicon-containing carbon. 或者,进一步在该电极表面和容器壁面上加偏压,使氟与碳和硅化合后排出,或者利用含氢的气体使氢与氟化合后排出,予以改善。 Alternatively, the further bias on the electrode surface and the container wall, fluorine bonded to carbon silicide and after discharge, or with hydrogen and a hydrogen-containing gas discharged after the fluorine, be improved.

若高频电源的频率为200MHz以上,尤其为300MHz以上,则等离子体密度提高,但气体离解过度,氟原子/分子和离子增加过多,Si和SiN等与底层的选择比明显降低,因此不希望这样做。 If the frequency of the high frequency power source is above 200MHz, 300MHz or more in particular, the plasma density is increased, but excessive dissociation of the gas, a fluorine atom / molecules and ions excessive increase, Si and SiN, and the selection ratio decreases significantly the bottom, which is not I wish to do so.

图3表示在回旋加速共振时和无共振时电子从高频电场中得到的能量增益K。 Figure 3 shows no resonance energy gain and electrons resulting from the high frequency electric field at the cyclotron resonance K. 无磁场时假定高频的1个周期中电子得到的能量为e0,在加上回旋加速共振磁场Bc=2πf·(m/e)时,高频的1个周期中电子得到的能量为e1,这时,e1、e0可按下数式1计算。 When no magnetic field is assumed that one cycle of the high frequency electronic energy E0 obtained, plus cyclotron resonance magnetic field Bc = 2πf · (m / e), the frequency of one cycle obtained energy electrons e1, In this case, e1, e0 press Expression 1 is calculated. e0=e2E22m(γω2+γ2)]]>e1=e2E2γ4m(1γ2+(ω-ωc)2+1γ2+(ω+ωc)2)]]>……数式1式中:E为电场强度当假定其比(=e1/e0)为K时,K可由下式表示。 e0 = e2E22m (& gamma; & omega; 2 + & gamma; 2)]]> e1 = e2E2 & gamma; 4m (1 & gamma; 2 + (& omega; - & omega; c) 2 + 1 & gamma; 2 + (& omega; + & omega; c) 2 )]]> ...... equation 1 where: E is the electric field strength when it is assumed ratio (= e1 / e0) K K is represented by the following formula. 式中m:电子的质量,e:电子的电荷,f:所加频率K=(1/2)(γ2+ω2){1/(γ2+(ω-ωc)2)+(1/(γ2+(ω+ωc)2))}式中:γ:碰撞频率,ω:激励角频率ωc:回旋加速角频率一般来说,K值随气压降低,频率升高而增大。 Where m: mass of electron, e: charge of an electron, f: the frequency K + = (1/2) (γ2 + ω2) {1 / (γ2 + (ω-ωc) 2) + (1 / (γ2 + ( ω + ωc) 2))} where: γ: collision frequency, ω: excitation angular frequency ωc: General cyclotron angular frequency, K values ​​with reduced air pressure, increases as the frequency increases. 图3表示Ar(氩)气的情况,在压力=1Pa时,f≥50MHz,K≥150,与无磁场时相比,在低气压下也能促进离解。 FIG 3 represents Ar (argon) gas, the pressure at the time = 1Pa, f≥50MHz, K≥150, as compared to when no magnetic field, at low air pressure can also promote the dissociation. 回旋加速共振效应在压力=1Pa时在20MHz以下的频率时急剧减小。 Pressure cyclotron resonance effect decreases sharply at a frequency = 20MHz or less when 1Pa. 即使从图2所示的特性中也可以看出,在30MHz以下的频率时,与无磁场时的差别很小,回旋加速共振效应很小。 Even can be seen from the characteristics shown in FIG. 2, at a frequency below 30MHz, and the difference is small when no magnetic field, cyclotron resonance effect is small.

再者,若降低气压,则回旋加速共振效应提高,但在1Pa以下时等离子体的电子温度升高,离解过度的负效应增大。 Further, if reducing pressure, increase the cyclotron resonance effect, but when the plasma electron temperature increases 1Pa or less, the negative effects of excessive dissociation increases. 为了抑制气体过度的离解,而且把等离子体密度提高到5×1010cm-3以上,气体压力可设定在0.4Pa~4Pa,最好是1Pa~4Pa。 In order to suppress excessive dissociation of the gas, and the plasma density increase to more than 5 × 1010cm-3, the gas pressure can be set at 0.4Pa ~ 4Pa, preferably 1Pa ~ 4Pa.

为发挥回旋加速共振效应,必须把K值设定在数十以上。 To play the cyclotron resonance effect, the K value must be set at several tens or more. 从图2和图3中也可以看出:为了不出现气体离解过度现象,有效地利用回旋加速共振效应,气压为0.4Pa~4Pa时,等离子体生成用高频电源必须采用30~300MHz,最好是50~200MHz的VHF。 Can also be seen in FIGS. 2 and 3: To a gas dissociation excesses do not appear to effectively utilize cyclotron resonance effect, when the pressure of 0.4Pa ~ 4Pa, a plasma generating high frequency power source must be 30 ~ 300MHz, most good is the VHF 50 ~ 200MHz.

图4表示在过去的磁控管方式容器内,对上部电极接地,在下部电极上加上均匀的横向磁场B,同时加上68MHz的高频功率时,出现由试样感应生成的离子加速电压VDC和试样内的感应电压VDC的偏差ΔV。 4 shows the container past the magnetron embodiment, the upper electrode is grounded, on the lower electrode together with a uniform transverse magnetic field B, while when the high-frequency power plus 68MHz, there is generated from the specimen induced ion acceleration voltage VDC and VDC in the sample induced voltage deviation ΔV. 若提高磁场B的强度,则作用于电子上的劳仑兹力使离子加速电压VDC减小,等离子体密度提高。 If increasing the strength of the magnetic field B, the Lorentz force acting on the electrons to accelerate ions voltage VDC decreases, the plasma density is improved. 但是,过去的磁控管放电型,由于磁场B的强度高达200高斯左右,所以,其缺点是:等离子体密度的面内均匀性降低,感应电压的偏差ΔV增大,试样的损伤增大。 However, conventional magnetron discharge type, the strength of the magnetic field B as high as 200 gauss, therefore, the drawback is: the deviation ΔV plane uniformity of the plasma density decreases, the induced voltage is increased, an increase in damage to the specimen .

从图4来看,与过去的磁控管放电型的200高斯时相比,为了使ΔV减小到1/5~1/10,磁场B的强度在试样面附近设定为30高斯以下,最好是15高斯以下。 , From FIG. 4 compared with the past in view of the magnetron discharge 200 Gauss type, in order to make ΔV is reduced to 1/5 ~ 1/10, B is the magnetic field strength near the surface of the sample is set to 30 gauss or less , preferably 15 gauss or less. 这对消除损伤是有利的。 This is beneficial for the elimination of injury.

回旋加速共振区形成在上部电极12和下部电极15的中间,而且离开两个电极的中间位置,稍稍偏向上部电极一侧。 Cyclotron resonance region is formed in the middle of the upper electrode 12 and the lower electrode 15, and an intermediate position away from the two electrodes, slightly to the upper electrode side. 图5表示横轴是从试样面(下部电极15)到上部电极12的距离;纵轴是磁场。 FIG 5 is a horizontal axis represents a sample from a surface (lower electrode 15) to the distance from the upper electrode 12; the vertical axis is the magnetic field. 图5的例子是,在所加频率f1=100MHz,Bc=37.5G、电极距离=50mm的条件下ECR区形成在离试样面30mm左右的位置上。 Example of FIG. 5, in the applied frequency f1 = 100MHz, Bc = 37.5G, electrode distance = 50mm under conditions ECR region is formed at a position 30mm away from the surface of the sample on the left and right.

这样,按照本发明,在上部电极12和下部电极15之间,与下部电极15(试样放置面)相平行的磁场成分的最大的部分被设定在上部电极面上,或者离开两个电极的正中间偏向上部电极一侧。 Thus, according to the present invention, between the upper electrode 12 and the lower electrode 15, 15 with the largest part (sample placement surface) of the lower electrode of the parallel magnetic field component is set at the upper electrode side, or leave two electrodes deflecting the middle of the upper electrode side. 这样,把与下部电极面上的试样相平行的磁场强度设定为30高斯以下,最好是15高斯以下,把在下部电极面附近作用于电子上的劳仑兹力(E×B)设定为较小的值,可以消除由下部电极面上的劳仑兹力形成的电子漂移效应所造成的等离子体密度的面内不均匀性。 Thus, the lower electrode and the sample surface parallel to the magnetic field intensity is set to 30 gauss or less, preferably 15 gauss or less, in the vicinity of the Lorentz force acting on the lower electrode surface electrons (E × B) set to a small value, the inner surface can eliminate the nonuniformity of electron drift effects Lorentz force formed by the lower electrode surface caused by the plasma density.

若采用图1的实施例的磁场形成装置200,则如图6所示,ECR区除试样的中央部附近外,几乎都是形成在距下部电极15(试样放置面)基本相同高度的位置上。 Use of a magnetic field in the embodiment of FIG 1 forming apparatus 200, as shown in FIG 6, ECR regions apart from the vicinity of the center portion of the sample, almost all are formed substantially at the same height (sample placement surface) of the lower electrode 15 from position. 所以,对于大的试样来说,可以均匀地进行等离子处理。 Therefore, for large samples, the plasma treatment can be carried out uniformly. 但是,在试样的中心附近,ECR区形成在比试样放置面高的位置上。 However, near the center of the specimen, the ECR region is formed in the surface of the sample was placed higher than the upper position. 由于ECR区和试样台之间有30mm以上的距离,所以在此间隔中离子和原子团进行扩散,形成平均化状态,因此,对通常的等离子处理来说没有问题。 Because there is more than 30mm and the distance between the ECR region sample stage, so the ions and radicals diffused in this interval, an average state, therefore, generally no problem for a plasma processing. 但是,为了对整个试样上均匀地进行等离子处理, ECR区最好形成在离整个试样面相同高度的位置上,或者使试样外侧的ECR区比中心附近的ECR区更接近试样台侧一些。 However, in order to uniformly process the entire sample and other ions, ECR region is preferably formed at the same height from the surface position of the entire specimen on the specimen or the outer region than the ECR ECR region near the center of the sample stage closer to Some side. 对这一措施以后详细说明。 After a detailed explanation of this measure.

如上所述,在图1所示的本发明的实施例中,等离子体发生用高频电源16使用30~300Mhz的高频功率,而且利用电子加速回旋共振来进行气体离解,所以,即使在处理室10内的气压为0.4Pa~4Pa的低压下也能获得稳定的等离子体。 As described above, in the embodiment of the present invention shown in FIG. 1, the plasma generating high frequency power of 30 ~ 300Mhz frequency power supply 16, and accelerated by electron cyclotron resonance to dissociate the gas, so that even in the process air pressure in the chamber 10 is under a low pressure of 0.4Pa ~ 4Pa stable plasma can be obtained. 并且,由于空间电荷层中的离子碰撞减少,所以,在处理试样40时可以提高离子的方向性,可以提高垂直微细加工能力。 Further, since the space charge in the ion impact is reduced, so that, when the treated samples can improve the directivity of the ions 40 can be improved vertical fine processing capacity.

处理室10的周围,利用抑制放电用圆环37使等离子体集中在试样40附近,以提高等离子体密度,同时使抑制放电用圆环37外面的部分上附着的不必要淀积物减少到最低限度。 Around the processing chamber 10, the ring 37 by suppression discharge plasma is concentrated near the sample 40, to increase the plasma density, while suppressing unwanted deposits adhering to the outer annular portion of the discharge is reduced to 37 at the lowest limit.

而且,抑制放电用圆环37采用碳和硅或SiC等半导体和导体材料。 Further, to suppress the discharge ring 37 and the like using a silicon or carbon and SiC semiconductor and the conductor material. 若把该抑制放电用圆环37连接到高频电源上,依靠离子产生溅射,则可减少淀积物在圆环37上的附着量,同时还具有除氟的效果。 If the discharge of the suppression ring 37 is connected to the high frequency power, relying on the ion generating sputtering, can reduce the amount of deposits adhered on the ring 37, while also having the effect of fluoride.

另外,若在试样40周围的绝缘体13上设置碳和硅或含有碳和硅的接收器罩39,则在利用含氟气体对SiO2等绝缘膜进行等离子处理时,可以去除氟,所以有助于提高选择比。 Further, if the carbon and the silicon-insulator disposed around the sample 40 or 13 containing carbon and silicon, the receiver cover 39, at the time of using the fluorine-containing gas such as SiO2 insulating film to a plasma treatment, fluorine can be removed, so help to improve the selectivity. 在此情况下,若把接收器罩39的下部分的绝缘体13的厚度减小到0.5~5mm,使偏压电压17的一部分功率加到接收器罩39上,则可利用离子的溅射效应来提高上述效果。 In this case, if the thickness of the insulator under the cover portion 39 of the receiver 13 is reduced to 0.5 ~ 5mm, so that a part of the bias voltage applied to the power receiver 17 of the cover 39, may make use of ion sputtering effect to enhance the above effect.

利用直流电源23的电位,夹住介质静电吸附膜22,通过下部电极15(15A、15B)形成静电吸附电路。 23 by a DC power supply potential, the electrostatic adsorption film dielectric sandwich 22, 15 (15A, 15B) forming a lower electrode by electrostatic attraction circuit. 在此状态下试样40借助静电力的作用被固定在下部电极15上。 In this state, the sample 40 by means of electrostatic forces is fixed to the lower electrode 15. 把氦、氮、氩等导热气体供给到由静电力固定的试样40的背面上。 The helium, nitrogen, argon, etc. on the backside heat transfer gas is supplied to the electrostatic force of the sample 40 is fixed. 导热气体充入下部电极15的凹部内。 Heat conducting gas into the lower electrode 15 of the recess. 其压力设定为数百帕斯卡至数千帕斯卡。 Set at a pressure of hundreds of thousands of Pascal to Pascal. 静电吸附力可被看作是在设有间隙的凹部之间几乎为零,仅在下部电极15的凸部处产生静电吸附力。 Electrostatic attractive force can be regarded as almost zero clearance is provided between the recesses, the electrostatic attractive force is generated only at the convex portion of the lower electrode 15. 但是,如后所述、在直流电源23内适当设定电压,可以设定出适当的吸附力,使其能充分经受导热气体的压力,所以,导热气体不会使试样40移动或飞出。 However, as described later, appropriately set within the DC power supply 23 voltage may be set an appropriate suction force, so that it can sufficiently withstand the pressure of heat transfer gas, so that the heat transfer gas 40 without moving the sample or fly .

但是,静电吸附膜22的作用会减小脉冲偏压对等离子体中的离子的偏置作用。 However, the electrostatic adsorption film 22 decreases the bias of a bias pulse of the ions in the plasma. 即使利用正弦波电源加偏压的过去的方法也有这种作用。 Even with power sine wave biased past methods also have this effect. 但不明显。 But not obvious. 不过,对于脉冲偏压来说,由于要牺牲离子能量宽度较窄这一特点,所以出现很大问题。 However, the pulse bias, because the ion energy at the expense of a narrower width of this feature, so there are big problems.

本发明的一个特征在于,为了抑制随着加脉冲偏压而在静电吸附膜22的两端之间产生的电压上升现象,提高脉冲偏压的效果,特设置了电压抑制装置。 One feature of the present invention is that, in order to suppress the adsorption with applied bias voltage pulse rise phenomenon between the ends of the film 22 in the electrostatic effect of improving the bias pulse, a voltage suppression device Laid provided.

作为电压抑制装置的一例可采用具有以下作用的结构,即随着加脉冲偏压而在静电吸附膜的两端之间产生的偏压的一个周期中的电压变化(Vcm)相当于脉冲偏压的大小(Vp)的1/2以下。 As an example of the voltage suppressing means may be employed in the structure has the effect, i.e. the voltage variation cycle of a pulsed bias voltage as generated by the electrostatic attraction between the ends of the film bias (Vcm) corresponding to a pulse bias the size (Vp) 1/2 or less. 具体的方法是减小下部电极15的表面上所设置的由介质构成的静电吸附膜的厚度,或者采用介电常数大的材料作为介质,以增大介质的静电电容。 Specific method is to reduce the thickness of the medium by the electrostatic adsorption film composed of the upper surface of the lower electrode 15 is provided, or a higher permittivity material as a medium to increase the capacitance medium.

另一种电压抑制装置,其方法也可以是缩短脉冲偏压的周期,以便抑制电压Vcm的上升。 Another voltage suppression device, which method may also be shortened pulse bias period, in order to suppress the rise of the voltage Vcm. 进一步还可以把静电吸附电路和加脉冲偏压的电路分离出来设置在别的位置上,例如设置在放置并固定试样的电极以外的另一对置的电极上,或者另外设置的第三电极上。 The third electrode may be further separating circuit and an electrostatic attraction bias pulse out circuit disposed in another position, for example, provided on the other opposing electrode and a fixed electrode is placed outside the sample, or otherwise provided on.

下面利用图7~图13来详细说明由本发明的电压抑制装置所形成的、在脉冲偏压一个周期中的静电吸附膜的两端之间产生的电压变化和脉冲偏压的关系。 7 to 13 illustrate the relationship and the pulse bias voltage change generated between both ends of the voltage formed by the apparatus of the present invention in suppressing electrostatic a pulse bias period adsorbed film detail below using FIG.

首先,在本发明的脉冲偏压电源17中使用的所需输出波形的例子示于图7。 First, an example of the desired output waveform used in the pulse bias power supply 17 of the present invention is shown in FIG. 图中,设脉冲宽度为Vp,频率周期为T0,正向脉冲宽度为T1。 FIG, Vp of the pulse width is set, the frequency period T0, the forward pulse width T1.

当通过隔直流电容器和静电吸附用介质层(以下简称静电吸附膜),把图7(A)的波形加到试样上时,利用另外的电源来生成等离子体的稳定状态下的试样表面的电位波形示于图7(B)内。 When through the DC blocking capacitor and the electrostatic attraction with the dielectric layer (hereinafter referred to as electrostatic adsorption film), the waveform of FIG. 7 (A) is applied to the sample, with additional sample surface to generate a power in the steady state plasma potential waveform shown in the FIG. 7 (B).

图中,VDC:波形的直流成分电压Vf:等离子体的漂游电位Vcm:在静电吸附膜的两端之间产生的一周期中的最大电压在图7(B)中,比Vf正的电压(1)的部分,主要是仅吸入了电子电流的部分;比Vf的负的部分是吸入了离子电流的部分;Vf部分是电子和离子互相均衡的部分(Vf通常是数V~十几(ten-odd)V)。 FIG, VDC: DC component of the voltage waveform Vf: potential drift plasma Vcm: in one period is the maximum voltage across the electrostatic adsorption film produced in FIG. 7 (B), than the positive voltage Vf ( 1) portion, the main portion of the suction only electron current; Vf than the negative portion of the suction portion is an ion current; Vf portion is electronically and ionically balanced each portion (typically several V ~ Vf ten (Ten -odd) V).

另外,在图7(A)和以后的说明中,假定隔直流电容器的容量和试样表面附近的绝缘体所产生的容量均比静电吸附膜所产生的容量(以下简称静电吸附容量)大得多。 Further, in FIG. 7 (A) and the subsequent description, it is assumed that the capacity and the septum near the surface of the insulator DC capacitor samples produced than the electrostatic capacity of the adsorption capacity of the resulting films (hereinafter referred to as electrostatic adsorption capacity) is much greater .

Vcm的值可由下式(数式2)表示。 Value Vcm is represented by the following formula (Equation 2).

式中,q:(T0-T1)期间内流入试样的离子电流密度(平均值)C:单位面积的静电吸附容量(平均值)ii:离子电流密度εr:静电吸附膜的介电常数d:静电吸附膜的厚度ε0:真空中的介电常数(常数)K:静电吸附膜的电极被覆(敷料)率(≤1)图8和图9表示脉冲占空比:(Ti/T0)为一定值,当改变T0时的试样表面的电位波形和离子能量的概率分布。 Where, q: an ion current density flowing into the sample (average value) within a period (T0-T1) C: electrostatic adsorption capacity per unit area (average) ii: ion current density εr: electrostatic adsorption film dielectric d : electrostatic adsorption film thickness ε0: dielectric constant in vacuum (constant) K: electrostatic adsorption film, the electrode coating (dressing) ratio (≦ 1) in FIG. 8 and FIG. 9 shows a pulse duty cycle: (Ti / T0) of a certain value, and when changing the ion energy potential waveform sample surface at T0 probability distribution. 其中,假定T01∶T02∶T03∶T04∶T05=16∶8∶4∶2∶1如图8(1)所示,当脉冲周期T0过大时,试样表面的电位波形大大偏离矩形波,变成三角波形,离子能量如图9所示,从低到高呈一定的分布,效果不好。 Wherein, assuming T01:T02:T03:T04:T05 = 16:8:4:2:1 8 (1), when the pulse period T0 is too large, a potential waveform sample surface greatly deviates from a rectangular wave, into a triangular waveform, the ion energy is shown in FIG. 9, from low to high as a certain distribution, ineffective.

如图8(2)~(5)所示,随着脉冲周期T0的减小,(Vcm/Vp)变成比1小的值,离子能量分布也变窄。 8 (2) to (5), as the decrease of the pulse period T0, (Vcm / Vp) becomes a value smaller than 1, the ion energy distribution is also narrowed.

在图8、图9中,T0=T01、T02、T03、T04、T05,对应于(Vcm/Vp)=1.0、0.63、0.31、0.16、0.08。 8, FIG. 9 to FIG, T0 = T01, T02, T03, T04, T05, corresponding to (Vcm / Vp) = 1.0,0.63,0.31,0.16,0.08.

脉冲的断路(T0-T1)期间和静电吸附膜的两端之间所产生的电压的一个周期中的最大电压Vcm的关系示于图10。 Relationship between the maximum voltage Vcm of breaking during a pulse period (T0-T1) and the voltage generated between both ends of the electrostatic adsorption film 10 shown in FIG.

作为静电吸附膜,利用厚度0.03mm的含氧化钛的氧化铝(εr=10)涂敷在电极的约50%的面上(K=0.5)时,离子电流密度ii=5m A/cm2的中密度等离子体中的Vcm值的变化用图10中的粗线(标准条件的线)表示。 When the electrostatic adsorption film, using the 0.03mm thickness of the alumina-containing titanium oxide (εr = 10) is applied at about 50% of the surface of the electrode (K = 0.5), the ion current density ii = 5m A / cm2 of variation value Vcm density in the plasma is represented by a thick line in FIG. 10 (line standard conditions).

从图10中可以看出,随着脉冲的断路(T0-T1)期间的增大,在静电吸附膜的两端之间所产生的电压Vcm与其成比关系而增大,超过通常使用的脉冲电压Vp。 As it can be seen from FIG. 10, the pulse increases as the disconnection period (T0-T1), the electrostatic attraction between the ends of the resulting film voltage Vcm relationship therewith ratio increases, pulse than commonly used voltage Vp.

例如,在等离子腐蚀机中,根据损伤、与底层和掩膜的选择性、形状等的不同,通常该电压被限定在以下范围内。 For example, in a plasma etching machine, depending on the injury, and with the underlying mask selectivity, shape, etc., usually this voltage is defined within the following range.

栅腐蚀时 20V≤Vp≤100V金属腐蚀时 50V≤Vp≤200V氧化膜腐蚀时 250V≤Vp≤1000V如果要满足下述的(Vcm/Vp)≤0.5的条件,则在标准状态下(T0-T1)的上限如下。 Etching the gate metal corrosion when 20V≤Vp≤100V 50V≤Vp≤200V when etching the oxide film to be met if the following 250V≤Vp≤1000V (Vcm / Vp) ≤0.5 condition, then in the standard state (T0-T1 ) as an upper limit.

栅腐蚀时 (T0-T1)≤0.1 5μs金属腐蚀时 (T0-T1)≤0.35μs腐蚀氧化膜时为(T0-T1)≤1.2μs,然而若T0接近0.1μs,则离子外层的阻抗就会接近或低于等离子阻抗,因此产生不需要的等离子,与此同时,偏压电源不能被离子加速有效地利用,故利用偏压电源控制离子能量的效果下降,所以,T0应高于0.1μs。 Etching the gate (T0-T1) ≤0.1 5μs when metal corrosion (T0-T1) when ≤0.35μs etching the oxide film (T0-T1) ≤1.2μs, but if T0 close 0.1μs, the impedance of the outer layer to ion will be near or below the plasma impedance, and therefore generation of unnecessary plasma, at the same time, the bias power supply can not be effectively used to accelerate ions, so that the effect of the bias power control using the ion energy decreases, therefore, should be higher than T0 0.1μs . 最理想的是高于0.2μs。 Ideally than 0.2μs.

因此,在将Vp控制在较低水平上的栅腐蚀等过程中,需要将静电吸附膜的材料改成介电常数高达10~100的材料(例如:Ta2O3,εr=25),或者在不降低绝缘耐压的条件下使膜厚变薄(例如:10μm~400μm的膜厚,希望薄到10μm~100μm)。 Therefore, Vp in the lower level on the control gate corrosion process, the material needs to be changed to the electrostatic adsorption film high dielectric constant of 10 to 100 material (e.g.: Ta2O3, εr = 25), or does not reduce thinning the film thickness under the conditions of the breakdown voltage (e.g.: 10μm ~ 400μm film thickness, it is desirable to thin 10μm ~ 100μm).

图10也同时示出将单位面积的静电电容C分别增加到2.5倍、5倍、10倍时的Vcm值,即使改善静电吸附膜,从现状看,最多也只能将静电容C提高数倍。 FIG 10 also shows a capacitance C per unit area are increased to 2.5 times, 5 times, 10 times the value Vcm, even improved electrostatic adsorption film, from the present situation, most can only be increased several times the electrostatic capacitance C . 若Vcm≤300伏,c≤10c0,则0.1μs≤(T0-T1)≤10μs。 If Vcm≤300 volts, c≤10c0, the 0.1μs≤ (T0-T1) ≤10μs.

通过离子加速对等离子处理有效的部分为(T0-T1)部分,作为脉冲占空比(T1/T0)希望尽量小。 Ions accelerated by the plasma treatment is effective portion (T0-T1) part, as the pulse duty cycle (T1 / T0) as small as desired.

作为加上时间平均的等离子处理的效率按(VDC/Vp)估算的结果示于图11。 Plus the time average of the efficiency as a plasma treatment according to (VDC / Vp) estimation are shown in FIG. 11. 希望减小(T1/T0),加大(VDC/Vp)。 Desirable to reduce the (T1 / T0), increase (VDC / Vp).

等离子处理的效率假设为0.5≤(VDC/Vp),加上下列条件(Vcm/Vp)≤0.5,则脉冲占空比为(T1/T0)≤0.4左右。 Efficiency of the plasma treatment was assumed to 0.5≤ (VDC / Vp), plus the following conditions (Vcm / Vp) ≤0.5, the duty cycle of the pulse (T1 / T0) is about ≤0.4.

另外,脉冲占空比(T1/T0)越小对离子能量的控制越有效。 The pulse duty ratio (T1 / T0) the smaller the effective control of ion energy. 但若小到超过需要的程度,则脉冲宽度T1的值变小,约为0.05μs,结果,含有许多数十MHz的频率成分,如后所述的发生等离子用的高频成分的分离也变得困难,如图11所示,在0≤(T1/T0)≤0.05之间的(VDC/Vp)降低极少,(T1/T0)高于0.05的情况下不发生问题。 However, if the small extent more than necessary, the pulse width T1 value becomes small, about 0.05μs, results, containing many tens of MHz of frequency components, high frequency components isolated after the occurrence of the plasma is also increased by the have difficulty, as shown in 0≤ (T1 / T0) decreased very little in FIG. 11 between the ≤0.05 (VDC / Vp), (T1 / T0) above problem does not occur in the case of 0.05.

在这里,图12作为栅腐蚀的例子,表示将氯气10mT等离子化后,硅与底层氧化膜的腐蚀速率ESi和ESiO2的离子能量的依存关系。 Here, FIG. 12 as an example of etching the gate, showing the rear 10mT ionized chlorine, etc., the ion energy dependency of the etching rate of the underlying silicon oxide film and ESiO2 the ESi. 硅的腐蚀速率ESi在低离子能量的情况下为一定值。 ESi etching rate of silicon at a low ion energy constant. 离子能量高于10V时,随着离子能量的增加,ESi也增加,另一方面,作为底层的氧化膜的腐蚀速率ESiO2在离子能量低于20V时为0。 When the ion energy is higher than 10V, with increasing ion energy, ESi increases, on the other hand, the etching rate of the oxide film as the underlying ESiO2 0 when ion energy is less than 20V. 若越过20V,则ESiO2与离子能量同时增加。 If crossed 20V, the ESiO2 and ion energy while increasing. 其结果,在离子能量为20V以下时,存在着与底层的选择比ESi/ESiO2成为∞的区域,如果离子能量为20V以上,则与底层的选择比ESi/ESiO2随着离子能量的增加,急速下降。 As a result, when the ion energy is less than 20V, there is the selected ratio of the underlying ESi / ESiO2 area becomes ∞ if the ion energy is 20V or more, the ratio of the selected underlying ESi / ESiO2 with increasing ion energy, the rapid decline.

图13作为绝缘膜的一种的氧化膜(SiO2、BPSG、HISO等)的腐蚀例子表示将C4F8气体1.0Pa等离子化后氧化膜与硅的腐蚀速率ESiO2和ESi的离子能量分布。 13 shows the etching rate of the silicon oxide film and the ionizing C4F8 gas 1.0Pa and the like ESiO2 ESi ion energy distribution as an insulating film of an oxide film etching examples (SiO2, BPSG, HISO like).

氧化膜的腐蚀速率ESiO2在低离子能量的情况下,为负值,产生沉积物。 ESiO2 corrosion rate of the oxide film at a low ion energy, is negative, generating deposits. 当离子能量接近400V时,ESiO2迅速朝正向上升。 When the ion energy closer to 400V, ESiO2 rapidly rising towards the positive direction. 之后慢慢地增加。 After increase slowly. 另外,作为底层的硅的腐蚀速率ESi,与ESiO2相比,在离子能量高处由(-)腐蚀变成(+)腐蚀后慢慢地增加。 Further, the etching rate of the silicon underlying ESi, compared with ESiO2, in a high ion energy - Corrosion becomes (+) gradually increases after etching (). 结果,在ESiO2从(-)向(+)变化的位置附近,与底层的选择比ESiO2/ESi变成∞,继续变化时,ESiO2/ESi随离子能量的增加而迅速下降。 As a result, in ESiO2 from (-) to a position near the (+) changes, and the bottom selection ratio ESiO2 / ESi becomes ∞, proceed changes, ESiO2 / ESi with increasing ion energy decreases rapidly.

图12、图13,对于适用实际的工艺,考虑ESi和ESiO2值及ESi/ESiO2以及ESiO2/ESi的值的大小后,调整偏压电源使离子能量达到适当值。 Figure 12, FIG 13, suitable for the actual process, consider the size and ESiO2 ESi values ​​and ESi / ESiO2 and values ​​ESiO2 / ESi adjusted ion energy bias power source to an appropriate value.

此外,如果对出现底层膜之前的腐蚀,优先考虑腐蚀速率的大小,腐蚀到出现底层膜后,优先考虑选择比的大小,将离子能量改成到出现底层膜腐蚀的前后,那么可得到更好的特性。 Further, if corrosion occurs before the underlying film, the corrosion rate of the size of the priority, the underlying film after the etching to occur, priority selection size ratio before and after the ion energy into the underlayer film corrosion is present, it may be better features.

但是,图12、图13所示的特性是限定在离子能量分布狭窄的部分时的特性。 However, FIG. 12, the characteristics shown in FIG. 13 is a characteristic distribution defined ion energy in a narrow portion. 离子的能量分布宽时,各腐蚀速率为其时间平均值,因此,不能设定成适当值,选择比大幅度下降。 Width of the energy distribution of the ions, the corrosion rate for each of the time average, therefore, can not be set to a suitable value, selected substantially lower than.

经试验,如果(VDC/Vp)为0.3以下,那么,离子能量的分布幅度为±15%以下。 After testing, if (VDC / Vp) is 0.3 or less, then the ion energy distribution width is ± 15% or less. 即使图12、图13的特性也得到了30以上的较高选择比。 Even FIG. 12, FIG. 13 is also characteristic of the selectivity ratio higher than 30. 而且,如果是(VDC/Vp)≤0.5,那么,与原来的正弦波偏压法相比改善了选择比等。 Further, if it is (VDC / Vp) ≤0.5, then, the original sine wave bias ratio selection method is improved compared to the like.

这样,作为抑制在静电吸附膜两端之间产生的脉冲偏压在一个周期中的电压变化(Vcm)的电压抑制装置,其构成以Vcm达到脉冲偏压大小Vp的1/2以下为好。 Thus, as a pulse bias suppressing electrostatic attraction between the ends of the membrane a voltage generated in the voltage variation cycle (Vcm) of the suppression device configured to Vcm of bias pulse Vp reaches 1/2 or less. 具体地说,通过使设在下部电极15的表面上的电介质的静电吸附膜22的膜厚变薄,将电介质改成介电常数大的材料等,可增加电介质的电容。 Specifically, by thinning the dielectric provided on a surface of the lower electrode 15 of the electrostatic attraction of the film thickness of the film 22, the dielectric material or the like into a high dielectric constant, the dielectric can increase the capacitance. 或者将脉冲偏压周期缩短到0.1μs~10μs,希望缩短到0.2μs~5μs(重复频率:对应于0.2MHz~5MHz),将脉冲占空比(T1/T0)设定为0.05≤(T1/T0)≤0.4来抑制静电吸附膜两端的电压变化。 Bias or the pulse period is shortened to 0.1μs ~ 10μs, desirable to shorten to 0.2μs ~ 5μs (repetition frequency: corresponding to 0.2MHz ~ 5MHz), the pulse duty factor (T1 / T0) is set to 0.05≤ (T1 / T0) ≤0.4 to suppress the voltage change across the electrostatic adsorption film.

还可将上述电介质的静电吸附膜的膜厚与电介质的介电常数和脉冲偏压的周期等因素加以组合,使上述的静电吸附膜两端间产生的电压Vcm的变化能满足上述(Vcm/Vp)≤0.5的条件。 The composition may also be pulsed bias dielectric constant and thickness of the electro-static adsorption film of the dielectric medium cycle and other factors, so that the electrostatic attraction between the membrane change in voltage generated across Vcm satisfies the above (Vcm / Vp) of ≤0.5 conditions.

下面,说明在绝缘膜(例如:SiO2、SiN、BPSG等)的腐蚀中使用图1的真空处理室时的实施例。 Next, the insulating film: Example when using the vacuum processing chamber 1 of FIG etching (e.g., SiO2, SiN, BPSG, etc.) in the.

气体19采用C4F8:1~5%;Ar:90~95%,O2:0~5%,或C4F8:1~5%;Ar:70~90%,O2:0~5%,CO:10~20%组成的气体。 Gas 19 using C4F8: 1 ~ 5%; Ar: 90 ~ 95%, O2: 0 ~ 5%, or C4F8: 1 ~ 5%; Ar: 70 ~ 90%, O2: 0 ~ 5%, CO: 10 ~ 20% of the composition of the gas. 等离子发生用的高频电源16,采用比原来还高的频率,例如采用40MHz的频率,谋求在1~3Pa的低气压区稳定放电。 And other ion generating RF power supply 16, using a frequency higher than the original, for example, with a frequency of 40MHz, to stabilize the discharge in the low pressure area of ​​1 ~ 3Pa.

另外,由于等离子源用的高频电源16的高频化而出现超过需要的离解时,利用高频电源调制信号源161对高频电源16的输出进行接通、断开或电平调制控制。 Further, since the frequency of the high frequency power supply 16 and other ion source used from occurring more than necessary when the solution using a high frequency power source 161 pairs of output signals modulated high frequency power source 16 is turned OFF or control the level of modulation. 高电平时,离子比原子团生成得多(快)。 When high, the ion generating much higher (faster) than a radical. 低电平时,原子团比离子生成多。 Low, than the ion generating multiple radicals. 接通(或电平调制时的高电平)时间,取5~50μs左右,断开时间(或电平调制时的低电平)取10~100μs,周期取20μs~150μs。 ON (high level or modulation) time, taking about 5 ~ 50μs, off time (or the low-level modulation) takes 10 ~ 100μs, fetch cycle 20μs ~ 150μs. 这样,可防止不必要的离解,同时,可得到所希望的离子原子团比。 This prevents unnecessary dissociation, and obtained the desired ratio of ion radicals.

此外,等离子源用的高频电源的调制周期通常比脉冲偏压周期长。 Further, the plasma source RF power supply with a modulation period is usually longer than the pulse bias period. 因此,通过将等离子源用的高频电源的调制周期调到脉冲偏压周期的整数倍,使两者间的相位达到最佳化,即可改善选择比。 Therefore, the modulation period of the high-frequency power by the plasma source is adjusted to an integer multiple of a pulse bias period, the phase between the two to optimize, the selection ratio can be improved.

另外,通过加脉冲偏压使等离子中的离子加速并垂直射入试样中,以此对离子能量进行控制。 Further, by applying the pulse bias to accelerate ions in the plasma incident on the sample and the vertical, in order to control ion energy. 脉冲偏压17,采用例如脉冲周期:T=0.65;脉冲幅度:T1=0.15μs;脉冲宽度:Vp=800V的电源,即可进行离子能量的分布幅度达到±15%以下,与底层的Si和SiN的选择比为20~50的良好特性的等离子处理。 Bias pulse 17, pulse period using, for example: T = 0.65; pulse width: T1 = 0.15μs; pulse width: Vp = 800V power supply, and the ion energy distribution width can be reached ± 15% or less, and with the underlying Si SiN selection ratio of 20 to 50 excellent characteristics of the plasma processing.

下面,根据图14对本发明的其它实施例的两电极型等离子腐蚀设备进行说明,该实施例与图1所示的结构相同。 Next, the two electrodes type and other embodiments of the present invention is a plasma etching apparatus will be described according to FIG. 14, for example, the configuration shown in FIG. 1 of the same embodiment. 但是不同的是,固定试样40的下部电极15具有单极式静电吸盘20。 But the difference is, the lower electrode 40 of the fixed specimen 15 has a monopole electrostatic chuck 20. 静电吸附用的电介质层22设在下部电极15的上表面上,下部电极15通过截止高频成分用的线圈24,连接直流电源23的正侧,提供20V~1000V的正脉冲偏压的脉冲偏压,电源17通过隔直流电容器进行连接。 Electrostatic adsorption dielectric layer 22 is provided on the upper surface of the lower electrode 15, a lower electrode 1524, connecting the positive side of the DC power source 23 is turned off by the high-frequency component with the coil to provide positive bias voltage pulse of 20V ~ 1000V pulse bias voltage power supply 17 connected through a DC blocking capacitor.

在处理室10的周围设有抑制放电用的圆环37A和37B。 Around the processing chamber 10 is provided with a discharge suppression ring 37A and 37B. 在谋求提高等离子密度的同时,最大限度地减少在抑制放电圆环37A、37B外面部分上的无用沉积物的附着。 While seeking to improve the plasma density and minimize the discharge in suppressing ring 37A, unwanted deposits adhered on the outer portion 37B. 关于图14的抑制放电圆环37A和37B,下部电极一侧的抑制放电圆环37A的围沿部直径小于上部电极一侧的抑制放电圆环37B的围沿部直径,使试样周围的反应生成物分布一样。 Discharge suppression ring 14 with respect to FIGS 37A and 37B, a lower electrode side to suppress the discharge diameter of the annular portion 37A along the circumference of the upper electrode side is smaller than the suppression of discharge diameter of the annular portion 37B along a circumference of the reaction around the sample product distribution of the same.

另外,作为抑制放电圆环37A、37B的材料至少在面对处理室一侧的面上采用碳、硅或SiC等半导体、导电体。 Further, the discharge suppression rings 37A, 37B of material on at least one side of the side facing the processing chamber and the like using carbon, silicon, or SiC semiconductor, conductor. 而且,下部电极一侧圆环37A利用电容器19A连接100K-13.56MHz的抑制放电圆环用偏压电源17A,上部电极一侧圆环37B可外加高频电源16的部分功率,减少因离子溅射效应而散发到圆环37A、37B上的沉积物,同时还使其具有除氟的效果。 Further, a lower annular electrode side 37A 19A is connected by the capacitor discharge suppression ring with 100K-13.56MHz bias power source. 17A, the upper electrode side of the annular portion 37B can be applied to a high-frequency power supply 16 is reduced by ion sputtering circulated to effect ring 37A, 37B on the deposit, but also to have the effect of fluoride.

图14中的13A、13C为由氧化铝等材料构成的绝缘体,13B为SiC、玻璃状(glassy)碳、Si等导电性的绝缘体。 FIG insulator 14 13A, 13C by a material such as alumina, 13B as SiC, glass (Glassy) carbon, Si and conductive insulator.

圆环37A、37B的导电性能低时,在圆环37A、37B中装入金属等导体,使圆环的表面与内装导体的间距狭窄,这样做,高频功率容易从圆环37A、37B的表面放射,可减小溅射效果的下降程度。 Ring 37A, 37B of low conductivity, in the ring 37A, 37B of the conductor such as metal is loaded, the pitch and the interior surface of the annular conductor is narrow, do so easily from the high frequency power ring 37A, and 37B surface radiation, the degree of decrease can be reduced sputtering effect.

上部电极罩30通常只其周围用螺栓250固定在上部电极12上。 An upper electrode cover 30 is typically only around 250 fixed to the upper electrode 12 with bolts. 通过气体导入室34、气体扩散板32及上部电极12将气体由气体供给部36供给到上部电极罩内。 34, the gas diffusion plate 32 and the upper electrode 12 into the gas supplied through the upper electrode covers the gas introduction chamber 36 from the gas supply unit. 为使孔中难以产生异常放电设在上部电极罩30上的孔做得细小、直径为0.3~1mm。 To make it difficult abnormal discharge hole is provided on the upper electrode cover 30 made of small holes, having a diameter of 0.3 ~ 1mm. 上部电极罩30上部的气压从1个气压的几分之一到十分之一左右。 An upper electrode of the upper cover 30 to the pressure from one of the fraction is about 1 atm. 例如:对直径300mm的上部电极罩30,总的加100kg以上的力。 For example: to cover the upper electrode 30 300mm diameter, the total force applied over 100kg. 为此,上部电极罩30对于上部电极12形成凸状,在中心部附近产生几百微米以上的间隙。 For this purpose, the upper electrode 30 to cover the upper electrode 12 is formed convex, produce more than several hundred micrometers in the vicinity of the center portion of the gap.

在这种情况下,若高频源16的频率增高到30MHz以上,则上部电极罩30的横向电阻不可忽视,特别是出现中心部附近的等离子密度下降的现象。 In this case, if the high frequency source 16 frequency is increased to above 30MHz, the lateral resistance of the upper electrode cover 30 can not be ignored, especially the emergence of the plasma density near the center portion of the drop phenomenon and so on. 为改善这种状况,将上部电极罩30靠近中心的部位固定在上部电极上即可,图14的实施例中,用SiC、碳等半导体或氧化铝等绝缘体的螺栓251把上部电极罩30靠中心的几个部位固定到上部电极12上,使得从上部电极12一侧施加的高频的分布达到相同。 To improve this situation, the upper portion 30 near the center of the electrode cover is fixed on the upper electrode to the embodiment of FIG. 14, an insulator with a bolt or the like SiC, a semiconductor such as carbon or alumina 251 covers the upper electrode 30 against several fixed to the upper portion of the center electrode 12, so that the distribution of the high-frequency side of the upper electrode 12 is applied to achieve the same.

另外,将上部电极罩30的至少是靠中心部分固定在上部电极12上的方法不只限定上述几种用螺栓251的固定方法,也可用具有粘接作用的物质把上部电极罩30和上部电极12全面地或至少靠中心的部分粘接起来。 Further, at least a portion of the upper electrode on the central cover 30 is fixed on the upper electrode 12 in a method of the above-described method of fixing only a few bolt 251 is defined, it may also be an adhesive material to effect an upper electrode cover 30 and the upper electrode 12 fully or partially by the Center for bonding together at least.

在图14的实施例中,作为处理对象物的试样40被装在下部电极15上面,通过静电吸盘20,即通过由直流电源23产生的正电荷和等离子提供的负电荷在静电吸附膜22两端间产生的库仑力来吸附试样40。 In the embodiment of FIG. 14, as the sample processing object 40 is mounted on top of the lower electrode 15, the electrostatic chuck 20, i.e., adsorption film electrostatic negative electric charge positive charge from the DC power generated by the 23 and plasma 22 provided Coulomb force generated between the two ends 40 to adsorb the sample.

该装置的作用与图1所示的双电极型等离子腐蚀装置相同,进行腐蚀处理时,将应进行处理的试样40放到试样台15上,用静电力进行固定,从气体供给系统36按所定的流量边向处理室10供应处理气体,边用真空泵18进行真空排气,将处理室10的压力排气减压到试样的处理压力0.5~4.0Pa。 It means the same effect of the two-electrode type apparatus and the like shown in FIG plasma etching, when the etching process, the sample should be processed 40 placed on the sample stage 15, is fixed by the electrostatic force, the gas supply system 36 by the predetermined flow rate of the processing gas supply side 10 to the processing chamber while evacuated with a vacuum pump 18, the exhaust gas pressure in the processing chamber 10 is reduced to a process pressure of the sample 0.5 ~ 4.0Pa. 接着接通高频电源16,在电极12和15两电极间加高频电压20MHz~500MHz。 Subsequently high frequency power source 16 is turned on, the high frequency 20MHz ~ 500MHz voltage between two electrodes 12 and 15. 最好加高频电压30MHz~100MHz,以发生等离子。 Preferably the high frequency voltage 30MHz ~ 100MHz, occur out of the plasma. 另一方面,由脉冲偏压电源17给下部电极15加20V~1000V,周期为0.1μs~10μs,最好为0.2μs~5μs的正脉冲偏压,控制处理室10内的等离子,对试样40进行腐蚀处理。 On the other hand, the bias power supply 17 by the pulse 15 applied to the lower electrode 20V ~ 1000V, a period of 0.1μs ~ 10μs, preferably a positive bias pulse 0.2μs ~ 5μs, the control process within the plasma chamber 10, the sample 40 processed by etching.

通过加这样的脉冲偏压使等离子中的离子或离子和电子加速并垂直射入试样,进行高精度的形状控制或选择比控制。 Such accelerated by adding a bias pulse of the plasma ions and electrons or ions incident on the sample and perpendicular to perform the highly accurate control of the shape control or selectivity. 脉冲偏压电源17和静电吸附膜22所需的特性与图1的实施例相同,详细情况的说明从略。 Same embodiment, details of the embodiments described will be omitted, and a pulse bias power supply 17 and the electrostatic adsorption film characteristics desired 221 of FIG.

下面根据图15至图17对本发明的其它实施例进行说明。 Next, other embodiments of the present invention will be described with reference to FIGS. 15 to 17. 该实施例虽然在结构上与图1所示的两电极型的等离子腐蚀机相同,但是磁场形成装置200的结构不同。 Although two embodiments of the same electrode type shown in FIG. 1 in a plasma etching machine configuration, but the configuration of the magnetic field forming device 200 is different. 磁场形成装置200的磁心201为偏心式,以相当于试样40的中心位置的轴为中心,由马达204驱动,按每分钟几转到几十转的速度进行旋转。 200 are formed magnetic core apparatus 201 is eccentric to the axis corresponding to the center position as the center of the sample 40, driven by a motor 204, the speed per minute to several tens of revolutions is rotated. 另外,磁心201接地。 Further, the core 201 is grounded.

为了高精度地对整个试样进行等离子处理,使试样周围部或其外侧附近的等离子生成比试样中央附近多,可在周围部或其外侧加大电子回旋加速共振效应,使其比中央大。 In order to accurately sample the entire plasma treatment, the sample and the like around the outer portion or near the vicinity of the plasma generating multiple than the center sample, or a portion can be increased around the outer electron cyclotron resonance effect, so than the central Big. 但是,在图1实施例的情况下,如图6所示,在试样的中心附近没有ECR区,在中心附近,出现等离子密度过低的情况。 However, in the case of the embodiment of FIG. 1, shown in FIG. 6, no ECR region near the center of the sample, in the vicinity of the center, appear like plasma density is low.

图15实施例中,磁场的分布随磁场形成装置200的偏心磁心201的旋转而发生变化。 15 embodiment, the magnetic field distribution of the core 200 of the eccentric 201 with the rotation of the magnetic field changes. 在试样的中心附近,如果时间为t=0,t=T0,则ECR区在比试样面低的位置上形成,当时间T=1/2T0时,它在比试样面高的位置上形成。 In the vicinity of the center of the sample, if the time t = 0, t = T0, the ECR region lower than the surface of the sample position is formed, when the time when T = 1 2T0 / it in a position higher than the surface of the sample the form. 磁心201以每分钟几转至几十转的转速旋转,结果,如图17所示,由于经旋转作用的时间平均化,与两电极中间的试样面相平行的方向的磁场强度平均值大致相同,即,ECR区除试样的周围部外,在距试样面基本上相同高度的位置上形成。 Core 201 to go to a rotational speed of several tens of revolutions per minute, the results, shown in Figure 17, since the rotation action by averaging time, the magnetic field strength of the sample surface in the middle of two parallel electrodes in a direction substantially the same as the average , i.e., the ECR regions apart from the peripheral portion of the sample, is formed at substantially the same height position from the surface of the sample.

另外,在图15的磁心201部,如虚线所示,如果离偏心的中央部磁心较近的一侧的、构成磁路的磁心减小厚度,而离偏心的中央部磁心较远的构成磁路的磁心增加厚度,那么将进一步提高磁场的均匀性。 Further, the magnetic core 201 in FIG. 15, as indicated by dashed lines, if the magnetic core constituting a magnetic circuit from an eccentric central portion of the core to reduce the thickness of the near side, and a central portion eccentric away from the core constituting the magnetic far increasing the thickness of the core passage, it will further enhance the uniformity of the magnetic field.

下面根据图18至19说明本发明的其它实施例。 Other embodiments will be described embodiments of the invention according to FIGS. 18-19. 该实施例的结构与图15所示的两电极型等离子腐蚀机相同。 The same configuration as the embodiment of FIG two-electrode type plasma etching machine shown in FIG. 15. 但是,磁场形成装置200的结构不同。 However, the magnetic field forming device 200 of different structures. 磁场形成装置200的磁心201在与处理室的中央相对应的位置上有凹面边201A,在与处理室两侧对应的位置上有另外的边201B。 Magnetic core forming apparatus 201 has concave sides 200 of the central processing chamber 201A at a position corresponding to, there is another side 201B at positions corresponding to both sides of the process chamber. 磁通B由于凹面的边201A的作用具有倾斜方向的成分。 Flux B due to the concave side 201A having a tilt direction component. 其结果,磁场的分布发生变化。 As a result, the distribution of the magnetic field changes. 如图19所示,与试样面平行的成分的磁场强度比图1实施例更加均匀化了。 19, the magnetic field strength parallel to the plane of the sample component is more uniform than in Example 1 of FIG.

下面根据图20说明本发明的其它实施例。 Other embodiments will be described below in accordance with the present invention. FIG. 20. 该实施例的结构与图15所示的两电极型等离子腐蚀机相同。 The same configuration as the embodiment of FIG two-electrode type plasma etching machine shown in FIG. 15. 但是磁场形成装置200的构成不同,磁场形成装置200的磁心201为固定式,与装在与处理室中央相对应的位置上的磁心205共同构成磁路。 However, different configurations magnetic field forming apparatus 200, the apparatus 200 of the core 201 is formed as a magnetic core fixed, and a central processing chamber and mounted in a position corresponding to 205 together constitute a magnetic circuit. 磁心205与绝缘体203同时围绕着通过边201A中心的轴进行旋转。 While the core 205 with the insulator 203 is rotated around the axis through the center of the edge 201A. 由于这样的结构,与图15的实施例相同。 Due to such a configuration, the same of the embodiment 15 of FIG. 试样中心附近的ECR区的平均位置在与试样面基本同等高度的位置上形成。 The average position of the ECR region is formed near the center of the sample surface of the sample substantially at the same height position. 即。 which is. ECR区对试样的整个面来说,均在与试样面基本相同的高度位置上形成。 ECR region is the entire surface of the sample, the sample surface are formed in substantially the same height positions.

下面根据图21和图22对本发明的其它实施例的两电极型等离子腐蚀设备进行说明。 The following two 22 pairs of electrode type and other embodiments of the present invention is a plasma etching apparatus will be described according to FIG. 21 and FIG. 该实施例的设备是这样构成的,即磁场形成装置200在处理室10的周围有两对线圈210和220,通过按1、2、3、4箭头方向顺次转换位于各对线圈上的磁场方向来形成旋转磁场。 Apparatus of this embodiment is constructed such that the magnetic field forming means 200 has two pairs of coils 210 and 220 around the processing chamber 10, located on each of the magnetic coils by pressing the arrow direction moving 1,2,3,4 Conversion direction to form a rotating magnetic field. 线圈210和线圈220的中心位置OO位于比12和15两电极中间位置高的上部电极12一侧。 OO coil 210 and the center position of the coil 220 is positioned higher than 12 and two electrodes 15 an intermediate position of the upper electrode 12 side. 这样,使试样40上的磁场强度变成30高斯以下,最好变成15高斯以下。 Thus, the magnetic field intensity on the sample 40 becomes 30 gauss or less, preferably becomes 15 gauss or less.

为了通过适当选定线圈210和线圈220的位置及外径的尺寸来提高在试样的周围部或其外侧附近生成等离子的量,可调整磁场强度的分布。 For the position and size by the outer diameter of the coil 210 and the coil 220 be selected appropriately to increase the amount distributed around the outer portion or near the plasma generation, etc. of a sample, an adjustable magnetic field strength.

根据图23和图24对本发明的其它实施例的双电极型等离子腐蚀设备进行说明,在该实施例中,作为磁场形成装置200,备有沿着圆形处理室10的周围,在水平面内按圆弧状设置的一对线圈210'。 Other two-electrode type of embodiment of the present invention is a plasma etching apparatus will be described according to FIG. 23 and FIG. 24, in this embodiment, as the magnetic field forming means 200, along with the circular periphery of the processing chamber 10, in a horizontal plane according to a pair of coils 210 'of the arcuate setting. 控制流向这对线圈210'的电流,按图23所示箭头方式向(1),(2),使磁场的极性按一定的周期发生变化。 This control current to the coil 210 'flow, shown by arrows in FIG. 23 to (1), (2), the polarity of the magnetic field varies according to a certain cycle.

如图24的虚线所示,在垂直面内,由于磁通B在处理室中心部扩大,所以处理室中心部的磁场强度下降。 Shown in phantom in FIG. 24, in the vertical plane, the magnetic flux B due to the expansion of the central portion of the processing chamber, the magnetic field strength of the center portion of the processing chamber is reduced. 但是,因一对线圈210'沿着处理室弯曲,在水平面内,磁通B集中在处理室中心部。 However, since a pair of coils 210 'is bent along the processing chamber, in a horizontal plane, the magnetic flux B concentrated in the central portion of the processing chamber. 因此,与图22的实施例相比,可提高处理室中心部的磁场强度,即图23实施例与图22实施例相比,可抑制处理室中心部的磁场强度的下降,使装在试样台上的试样设置面上的磁场强度的均匀性进一步提高。 Thus, compared with the embodiment of FIG. 22, the processing chamber can improve the strength of the magnetic field of the central portion, i.e., decreased compared to the embodiment of FIG Example 22, the magnetic field strength of the center portion of the processing chamber is suppressed in FIG. 23 embodiment, again mounted so that a sample stage disposed like surface uniformity of the magnetic field strength is further improved. 并通过按一定周期使磁场的极性发生变化,而减少了E×B的漂移效果。 And by changing the period of a certain polarity of the magnetic field, reduce the effect of E × B drift is.

另外,作为磁场形成装置200也可以采用与图22的实施例相同的两对线圈。 Further, as the magnetic field forming device 200 may be used the same as the embodiment of Figure 22 two pairs of coils.

磁场形成装置200,还可如图25所示,将沿着圆形处理室10周围布置的几个直线线圈部分组合起来作为凸型线圈210”取代圆弧状线圈210'。在这种情况下,在水平面内,磁通B集中在处理室中心部。可得到与图23实施例相同的效果。 Magnetic field forming means 200, also as shown in FIG 10 along a circular arrangement around the treatment chamber several straight coil portion 25 together as a convex combination of the coil 210 "substituted arcuate coil 210 '. In this case, , in a horizontal plane, the magnetic flux B concentrated in the central portion of the processing chamber. the same effect can be obtained with the embodiment in FIG 23.

还可以象图26实施例那样为能使一对线圈的中心轴在处理室中心部靠近试样面,将线圈中心轴倾斜放置。 Example embodiments may also be as in FIG. 26 is a pair of coils enables the central axis of the processing chamber close to the surface of the sample in the central portion, the coil center axis tilted. 如果采用这个实施例,则可提高处理室中心部的磁场强度和降低处理室周围部的磁场强度,因而可提高试样台的试样放置面的磁场均匀性。 If this embodiment, the magnetic field strength can be improved and the central portion of the processing chamber to reduce the magnetic field strength around the processing chamber portion, thus improving the uniformity of the magnetic field of the sample placement surface of the sample stage. 另外,为了磁场强度的均匀性,较好的方法是将线圈中心轴的倾斜角度θ调整到5~25度的范围。 Further, the uniformity of the magnetic field strength in order, the preferred method is to coil center axis inclination angle θ is adjusted to the range of 5 to 25 degrees.

此外,如图27所示,在一对线圈210A的旁边安装线圈210B,对两组线圈电流进行控制。 Further, as shown in Figure 27, the next pair of coils 210A 210B mounted coil, the coil current is controlled the two groups. 通过这样做使在ECR共振位置附近的磁场坡度随ECR共振位置的变化而变化,还可使ECR共振区的幅度发生变化。 By doing so change with the position of the ECR resonance magnetic field gradient varies in the vicinity of the position of ECR ​​resonance, ECR resonance region also makes the amplitude changes. 通过使ECR共振区的幅度对每种工艺程序都达到最佳状态,即可得到适合各种工艺程序的离子/原子团比。 By making the amplitude of the resonance region for each ECR process procedures reach the optimum condition can be obtained for a variety of process sequence ions / radicals ratio.

另外,根据需要将上述的图23~图27的实施例适当地组合起来,这样可进一步提高磁场分布的均匀性和可控制特性。 Further, according to the embodiment described above needs to be 23 to 27 are suitably combined, so that further improve the uniformity of magnetic field distribution and control characteristics.

接着根据图28~图29就本发明的其它实施例的两电极型等离子腐蚀机进行说明。 Next will be described embodiments two electrode type and other embodiments of the present invention, an ion etching machine 29 according to FIG. 28 to FIG. 在该实施例中,部分处理室壁由半导体构成,同时接地。 In this embodiment, part of the processing chamber wall is made of a semiconductor, while the ground. 另外,磁场形成装置200,在处理室10的周围和上部备有线圈230和240。 Further, magnetic field forming device 200 and around the upper portion of the processing chamber 10 with the coil 230 and 240. 由线圈230形成的磁通B的方向和由线圈230形成的磁通B'的方向如箭头所示在处理室10的中心部相互抵消,而在处理室10的周围和外侧相互重叠。 Direction of the magnetic flux B is formed by the coil 230 and the coil 230 formed by a magnetic flux B 'cancel each other as shown by the arrows in the center portion of the processing chamber 10, and overlap each other around the outside of the processing chamber 10. 其结果,试样面上的磁场强度分布变成图29的状态。 As a result, the magnetic field intensity distribution on the sample surface 29 into a state of FIG. 并且,在试样40的放置面部分,上部电极12和下部电极15之间的电场成分方向与磁场成分方向平行。 Further, part of the sample placement surface 40, and the upper electrode 12 and the direction of the magnetic field component parallel to the direction of the electric field component 15 between the lower electrode. 另一方面,试样40放置面的外侧部分在上部电极12的周围部分和上部电极12与处理室壁之间部分产生与横向电场成分直交的纵向磁场成分。 On the other hand, the outer portion 40 is placed with the longitudinal surface of the sample to generate a magnetic field component perpendicular to the transverse electric field component portion between the peripheral portion of the upper electrode 12 and the upper electrode 12 and the process chamber wall.

因此,如果采用图28实施例,则可减小试样中心附近的电子回旋加速共振效应,从而提高试样周围部及其外部附近的等离子生成。 Thus, if the embodiment of FIG. 28, may be reduced electron cyclotron resonance near the center of the specimen acceleration effect, thereby improving the sample portion and the outer periphery near the plasma generation. 这样,通过进一步提高试样周围部及其外侧附近的等离子生成,可使等离子密度分布均匀化。 Thus, by further increasing the sample near the peripheral portion and outside of the plasma generation, the plasma density distribution can be made uniform.

下面根据图30说明本发明的其它实施例。 Other embodiments will be described below in accordance with the present invention. FIG. 30. 在图1所示的两电极型等离子腐蚀机上,当高频电源16加到电极12上的高频功率f1不能得到充分的离子能量时,通过从低频电源163向上部电极12加例如1MHz以下的高频f3作为偏压,将离子能量增大100~200V左右,另外,164、165为滤波器。 In the two-electrode type 1 shown in FIG ion etching machine, f1 when the high-frequency power applied to the electrodes 16 of the high frequency power supply 12 can not obtain sufficient ion energy, upwardly through the portion 163 from the low frequency power source electrode 12 applied e.g. 1MHz or less as the bias frequency f3, the ion energy is increased by about 100 ~ 200V, additionally, 164, 165 of the filter.

下面根据图31说明无磁场式的两电极型等离子腐蚀机方面的本发明实例。 Examples of the present invention will be described below non-magnetic type two-electrode type plasma etching machine according to the aspect of FIG. 31.

如上所述,为提高试样的微细加工工艺性,较好的办法是采用频率更高的电源作为等离子发生用高频电源16,谋求在低气压区放电的稳定性。 As described above, a fine processing technology to improve the specimen, it is preferred approach is to use a higher frequency power supply as a plasma generating high frequency power supply 16, a low pressure area seek stability in discharge. 本发明的实施例,将处理室10中的试样处理压力设定为0.5~4.0Pa。 Embodiments of the present invention, a sample processing process pressure in chamber 10 is set to 0.5 ~ 4.0Pa. 通过将处理室10内的气压变成40mTorr以下的低压,减少了在空间电荷层的离子冲击,所以在处理试样40时,离子的方向性增强了,可以进行垂直的微细加工。 By the gas pressure within the processing chamber 10 becomes low pressure 40mTorr or less, reducing the space charge in the ion impact layer, the treated samples at 40, enhances the directionality of ions can be vertically microfabrication. 另外,当5mTorr以下时,为得到同样的处理速度,排气装置和高频电源要增大,与此同时有这样的倾向,即电子温度上升导致超过需要的离解,使特性下降。 Further, when 5mTorr or less, in order to obtain the same processing speed, and high-frequency power supply means to the exhaust gas increases, at the same time there is a tendency that the electron temperature rises more than necessary results in dissociation of the characteristics are lowered.

一般说来,在采用一对双电极的等离子发生电源的频率和稳定地进行放电的最低气压之间存在着这样一种关系,即如图32所示,电源的频率越高,电极间距离越大,稳定放电最低气压就越低,为了避免沉积物等对周围壁及抑制放电圆环37的不良影响和有效地利用上部电极罩30、接受器罩39及试样中的感光胶等来去掉氟和氧,最好是对应于最高气压40mTorr时的平均自由行程的25倍以下,将电极间距离设定为50mm以下。 In general, a pair of double ion electrodes like occurs there is a relationship between the minimum pressure and the frequency of the power stably discharged, as shown in FIG i.e., the higher the frequency of the power supply 32, the inter-electrode distance large, a stable discharge lower the minimum pressure, etc. in order to avoid deposits on the peripheral wall and discharge suppression ring 37, and adverse effects of effective use of the upper electrode cover 30, a receptacle cover 39 and the like photoresist to remove the sample fluorine and oxygen, preferably less corresponding to 25 times the mean free path at the maximum pressure 40 mTorr, the inter-electrode distance is set to 50mm or less. 而且,电极间的距离若不是最高气压(40mTorr)时的平均自由行程的2~4倍(4mm~8mm)以上,则稳定放电困难。 Further, if the distance between the electrodes is 2 to 4 times the mean free path of the gas pressure at the maximum (40mTorr) (4mm ~ 8mm) above, the discharge stability is difficult.

图31所示的实施例,由于等离子发生用的高频电源16采用了20MHz~500MHz的高频,最好采用30MHz~200MHz的高频功率,所以即使将处理室内的气体压力变成0.5~4.0Pa的低压也可得到稳定的等离子,并可提高微细加工工艺性。 Embodiment illustrated in FIG. 31, the high-frequency power supply 16 using the plasma generating high frequency of 20MHz ~ 500MHz is preferable to use a 30MHz ~ 200MHz frequency power, even if the process chamber gas pressure becomes 0.5 to 4.0 Pa can be obtained a stable low-pressure plasma, and improves fine-processing technology. 而且,通过采用这样的高频功率,使得等离子的离解改善了,试样加工时的选择比控制更容易了。 Moreover, by using such a high-frequency power, such that the plasma dissociation improved, select sample processing easier than the control.

在上述的本发明实施例中,也已考虑到在脉冲偏压电源输出与等离子发生电源的输出之间也可能产生干扰。 In the embodiment of the present invention, it has been considered to occur between the output of the power supply output pulsed bias power may interfere with the plasma. 因此,下面就此对策加以论述。 Thus, the following countermeasures to be addressed this.

首先脉冲宽度为T1,脉冲周期为T0,具有无限大的上升/下降速度的理想矩形脉冲,如图33所示,在f≤3f0(f0=1/T1)的频率范围内含有70~80%的功率。 First, the pulse width T1, the pulse period T0, having infinite ascending / descending speed ideal rectangular pulse, as shown in FIG, 70 to 80% in f≤3f0 (f0 = 1 / T1) of the frequency range of 33 power. 实际加的波形因上升/下降速度有限,功率的集中性进一步得到的改善,在f≤3f0的频率范围内已能达到含90%以上的功率。 The actual waveforms applied due to rising / lowering speed is limited, the concentration of power further improved in the frequency range of f≤3f0 containing been able to achieve more than 90% power.

为了将具有3f0高频率成分的脉冲偏压均匀地加到试样面内。 In order to have a high-frequency component 3f0 pulse bias uniformly applied to the inner surface of the sample. 最好设置与试样基本平行的对面电极。 Preferably the opposite electrode disposed substantially parallel to the sample. 对于按下列数式3求出的3f0,使f≤3f0范围的频率成分进行接地。 For the following Equation 3 obtained 3f0, f≤3f0 range of frequency components to ground.

若设T1=0.2μs,则3f0=3·106/0.2=15MHz若设T1=0.1μs,则3f0=30MHz …数式3图31所示的实施例是对上述的脉冲偏压电源输出与等离子发生电源输出产生的干扰采取对策。 If the set T1 = 0.2μs, is 3f0 = 3 · 106 / 0.2 = 15MHz Assuming that T1 = 0.1μs, is 3f0 = 30MHz ... 31 embodiment illustrated in FIG. 3 is the formula number of the above-described power output and pulsed bias plasma generating interference generated power output to take countermeasures. 即在该等离子腐蚀机上。 That is, in the plasma etching machine. 与试样对向的上部电源12上连接等离子发生高频电源16。 Occurrence frequency power source 16 and the sample 12 and the like connected to the upper power ion. 为使该上部电极12达到脉冲偏压的接地水平,等离子发生用高频电源16的频率f1提高到上述3f0以上,而且在上述电极12和接地电平之间连接在f≤f1附近阻抗大,在其他频率下阻抗小的带阻器141。 The upper electrode 12 to reach the ground level of the pulse bias, the frequency of the plasma-generating high frequency power source 16 is increased to above 3f0 f1 or more, and between the electrode 12 and the ground connection level near f≤f1 large impedance, bandstop small impedance 141 at other frequencies.

另一方面,在f=f1附近阻抗低,其他频率时用阻抗高的带通滤波器142设置在试样台15和接地电平之间。 On the other hand, in the vicinity of f = f1 low impedance, when the high frequency impedance of the other band pass filter 142 is provided between the sample stage 15 and the ground level. 如采用这种结构,就可以把脉冲偏压电源17的输出和等离子发生电源16的输出之间的干扰控制在毫无问题的水平,把合适的偏压加在试样台40上。 By making such construction, it is possible to output a pulse bias power supply 17 and the like interfering ions between the output of the power supply 16 is controlled to a level no problem, the appropriate bias voltages on the sample stage 40.

图34,是把本发明用于外部能量供放电方式中的电感耦合放电方式无磁场型的等离子刻蚀机内的例子。 34, the present invention is to provide an external energy inductively coupled discharge mode is the discharge mode without example within the magnetic field type plasma etcher. 52是平面线圈、54是在平面线圈上加10MHz~250MHz高频电压的高频电源。 52 is a planar coil 54 plus 10MHz ~ 250MHz is high-frequency voltage in the planar coil RF power supply. 电感耦合放电方式与图10所示的方式相比,可以实现在低频且低压的条件下产生稳定的等离子。 Compared with the inductive coupling discharge method shown in FIG. 10, at low frequencies to produce a stable, low-pressure plasma conditions can be achieved. 相反,如图1所示,因而离解,所以用高频电源调制信号源161来调制高频电源1的输出,能防止不必要的离解。 In contrast, as shown in Figure 1, and thus dissociation, the high frequency power supply modulation signal source 161 to modulate the output of the high frequency power source 1 can prevent unnecessary dissociation. 做为真空容器的处理室10,备有试样台15,用于把试样40放置在其静电吸附膜22上。 As the processing chamber 10 of the vacuum chamber, with the sample stage 15, a sample 40 is placed on the electrostatic adsorption film 22 thereof.

进行刻蚀处理时,把应进行处理的试样40放置在试样台15上,用静电功率来固定,一边从气体供给系统(无图示)把处理气体按规定的流量导入到处理室10,一边用真空泵排气,使处理器10的压力减压到0.5~4Pa。 When the etching process, the sample should be processed 40 placed on the sample stage 15, fixed electrostatic power, while the gas supply system (not shown) the gas is introduced into the processing chamber at a predetermined flow rate of 10 , while the exhaust gas by a vacuum pump, the pressure is reduced to a processor 10 0.5 ~ 4Pa. 然后,在高频电源54上加13.56MHz的高频电压,在处理室10内产生等离子,用该等离子来刻蚀试样40。 Then, the high frequency voltage at 13.56MHz high frequency power source 54, and the like is generated in the plasma processing chamber 10, with a plasma to etch the sample 40. 另外,刻蚀时,在下部电极15上,加上周期为0.1μs~10μs,最好为0.2μs~5μs的脉冲偏压。 Further, when etching, on the lower electrode 15, plus the period of 0.1μs ~ 10μs, preferably a pulsed bias 0.2μs ~ 5μs. 其脉冲偏压的宽度,因其膜种类不同范围各异的情况如图1的实施例所述。 The width of the pulse bias, because of a different range of different types of film described in Example 1, the case of FIG. 通过加脉冲偏压,让等离子中的离子加速、垂直入射到试样上,用以控制形状的高精度或选择比。 By applying a bias pulse, so that the plasma ions accelerated perpendicularly incident on the sample, or for high-precision control of the shape selectivity. 这样,即使光刻胶掩膜图形是极微细的,也能对其进行高精度的刻蚀处理。 Thus, even if a photoresist mask pattern is very fine, it can be highly accurate etching process.

另外,如图35所示,在电感耦合放电方式无磁场型的等离子刻蚀机中,在感应高频输出的处理室10一侧,设有带间隙的法拉第屏蔽板53和0.5mm-5mm的薄屏蔽板保护用绝缘板54,也可使其法拉弟屏蔽板接地。 Further, as shown in FIG. 35, the inductive coupling discharge method without magnetic field type plasma etcher, 10 side, is provided with a Faraday shield gap sensing processing chamber 53 and high-frequency output of 0.5mm-5mm thin protective insulating shield plate 54, so that it may be grounded Faraday shield plate. 因设置了法拉弟屏蔽板53,所以减少了线圈和等离子间的电容成分,能够降低对图34中的线圈52下的石英板和屏蔽板保护用绝缘板54进行碰撞的离子的能量,减少石英板和绝缘板的损伤,同时,还能防止等离子中异物的混入。 By setting the Faraday shield plate 53, so reducing the coil and the other capacitance component between ions, it is possible to reduce the energy of the quartz plate and the shield plate in FIG. 34 is a coil 52 protected by a collision with an insulating plate 54 ions, reducing quartz damage plate and the insulating plate, while also preventing inclusion of foreign substances in the plasma.

另外,因法拉第屏蔽板53还兼用作脉冲偏压电源17的接地电极,所以能在试样40和法拉弟屏蔽板53之间均匀地加脉冲偏压。 Further, due to the Faraday shield plate 53 also serves as a pulse and the bias power supply 17 of the ground electrode, it is possible to uniformly pulsed bias between the sample 40 and the Faraday shield plate 53. 这时,无需在上部电极或试样台15上设置滤波器。 In this case, no filter is provided on the upper electrode 15 or the sample stage.

图36是把本发明用于微波等离子处理装置时装置一部分的纵截面的正面图。 FIG 36 is a front view of the present invention is applied to a portion of a longitudinal section of the apparatus of the microwave plasma processing apparatus. 在静电吸附膜22上放置试样40的试样台15即下电极15上,连接了脉冲偏压电源17及直流电源13。41是作为微波振荡源的磁控管、42是微波波导管、43是真空密封处理室10并把微波供给处理室10的石英板。 Sample table 40 sample was placed on the electrostatic adsorption film 2215 on the lower electrode 15 that is connected to the bias power supply 17 and the DC pulse power supply is a microwave oscillation 13.41 magnetron source, 42 is a microwave waveguide, 43 is vacuum sealed process chamber 10 and the supply of the microwave processing chamber 10 of the quartz plate. 47是提供磁场的第一螺线线圈,48是提供磁场的第二螺线线圈、49是处理气体的供给系统,为处理室10提供进行刻蚀、成膜等处理时所用的处理气体。 47 to provide a first spiral coil of the magnetic field, the magnetic field 48 to provide a second spiral coil, 49 is a processing gas supply system, when the etching processing gas, the processing such as film formation chamber 10 to provide for the processing used. 处理室10由真空泵(无图示)进行真空排气。 The processing chamber 10 is evacuated by a vacuum pump (not shown). 偏压电源17及静电吸盘20所必要的特性与图1所示的实施例相同。 Same as in Example 17 and the electrostatic chuck bias power source 20 necessary characteristics shown in FIG. 详细内容从略。 Details omitted.

进行刻蚀处理时,应把进行处理的试样40放置在试样台15上,用静电力进行固定,一边从气体供给系统49按所定流量把处理气体导入到处理室10里,一边用真空泵抽真空,使处理室10的压力减压到0.5-4.0Pa。 When the etching process, the sample should be processed 40 placed on the sample stage 15, is fixed by the electrostatic force, while the gas supply system 49 according to a predetermined flow rate of the process gas is introduced into the processing chamber 10, the vacuum pump while vacuum, the process chamber pressure is reduced to 10 0.5-4.0Pa. 然后,接通磁控管41及第一、第二螺线线圈47、48,把磁控管41所产生的微波通过波导管42导入处理室10,使之产生等离子。 Then, the magnetron 41 is turned on and the first and second spiral coils 47 and 48, the microwaves generated by the magnetron 41 through a waveguide 42 into the processing chamber 10, so as to generate a plasma. 用这种等离子对试样40进行刻蚀处理。 The sample 40 is etched by this plasma. 另外,在刻蚀时,要在下电极15上加上周期为0.1μs~10μs,最好为0.2μs~5μs的脉冲偏压。 Further, at the time of etching, the lower electrode 15 is coupled to a period of 0.1μs ~ 10μs, preferably a pulsed bias 0.2μs ~ 5μs.

加这种脉冲偏压,能使等离子中的离子加速、垂直地入射到试样上,从而达到控制高精度的形状或选择比的目的。 This pulsed bias voltage applied, can accelerate ions in the plasma, perpendicularly incident on the sample, so as to achieve high-precision control of the shape or the purpose of ratio selection. 这样,即使试样的光刻胶掩膜图形极微细,也能通过垂直入射,进行对应掩膜图形的高精度刻蚀处理。 Thus, even if the resist mask extremely fine pattern of a sample, but also through normal incidence, high precision etching treatment of the corresponding mask pattern.

再有,在图1所示的本发明的等离子刻蚀装置中,也可重叠地产生静电吸附电路的直流电压和脉冲偏压电源电路的脉冲电压,构成通用电路。 Further, in the plasma etching apparatus according to the present invention shown in Figure 1, it may be a pulse voltage is superimposed DC voltage and a pulse power supply circuit electrostatic attraction bias circuit, general circuit configuration. 同时,也可把静电吸附电路和脉冲偏压电源电路设计成分离的电极,使脉冲偏压不影响静电吸附。 Meanwhile, the electrostatic attraction may be pulsed bias circuit and a power supply circuit designed to separate electrodes so that electrostatic adsorption does not affect the pulse bias.

图1所示的等离子刻蚀装置实施例中的静电吸附电路,也可采用其他的装置,例如用真空吸附装置来代替。 Electrostatic attraction circuit in the plasma etching apparatus shown in FIG. 1 embodiment, other means may be employed, for example, instead of the vacuum suction means.

具备上述本发明的静电吸附电路和加脉冲偏压电路的等离子处理装置,若改为导入CVD气体等来代替刻蚀气体,则不仅适用于上述的刻蚀处理装置也可适用于CVD等装置的等离子处理装置。 Includes a pulse circuit and an electrostatic attraction bias circuit of the present invention is a plasma processing apparatus, when introduced into the CVD gas to an etching gas instead, is applicable not only to the above-described apparatus is also applicable to an etching process such as CVD apparatus The plasma processing apparatus.

下面,介绍利用图37所示的本发明的其他实施例来克服例来的缺点、控制离子和原子团生成的质和量、能够进行极微细的等离子处理的等离子刻蚀装置的另一实施例。 Next, the description to overcome the drawbacks embodiment to control the quality and quantity of ions and radicals generated can be further plasma etching apparatus of the extremely fine plasma processing embodiments utilize other embodiments of the present invention shown in FIG. 37.

即,在装有试样的真空处理室上流一侧,在与真空处理室不同的地方设定能进行第一等离子生成的场所,把在这个场所生成的准稳定原子注入到真空处理室内、再由真空处理室生成第二等离子。 That is, in the upstream side of the vacuum processing chamber with the sample in the vacuum processing chamber can be set to different places a first plasma generation place to place in the metastable atoms generated implanted into the vacuum processing chamber, then generating a second plasma processing chamber by the vacuum. 在图1所示的等离子刻蚀装置上,另外准备了离子、原子团源用的供气部60和发生准稳定原子用的等离子发生室62。 In the plasma etching apparatus shown in FIG. 1, the separately prepared ion, the air supply unit 60 radical source used and the occurrence of metastable atoms with plasma generation chamber 62. 另外,在上电极12上,除设有把含准稳定原子的气体导入到真空处理室的通路之外,还设有与供离子、原子团源用的供全部相连的导入通路。 Further, the upper electrode 12, in addition to containing the metastable atoms with a gas introduced into the passage outside of the vacuum processing chamber is also provided for introducing passage connected with the supply of all the ion source for radicals.

该实施例的特征如下:①由产生准稳定原子的气体供给部36所提供的气体,在产生准稳定原子用的等离子发生室62上,加高频功率进行等离子化,预先按所需量发生预定的准稳定原子并将其注入到处理室10。 This embodiment is characterized as follows: ① the gas provided the gas supply section generates metastable atoms 36, in generating metastable atoms with the plasma generating chamber 62, the high frequency power in the plasma of the previously required amount occurs predetermined metastable atoms and injected into the processing chamber 10. 为使产生准稳定原子用的等离子发生室62,能高效的产生准稳定原子,室内的压力要设定在数百mTorr-数十Torr的高压上。 For metastable atoms generated by plasma generation chamber 62, to efficiently produce metastable atom, a pressure chamber to be set at several tens of Torr to hundreds mTorr- high pressure.

②另一方面,要使从离子·原子团源用的供给部60提供的气体流入到处理室10。 ② On the other hand, from the gas supply unit 60 to make the ion-radical source provided with a flow into the processing chamber 10.

③用等离子发生用的电源16输出较低功率的高频,使之在处理室10中产生等离子。 ③ power plasma-generating high-frequency output 16 of low power, so as to generate plasma in the processing chamber 10. 由于准稳定原子的注入,用5eV以下的低能量电子也可以有效地生成离子,因此,可以获得低电子温度(6eV以下、理想的为4eV以下)而且超过15V以上的高能电子大幅减少的等离子。 Since the metastable injection atoms, of 5 eV below the low energy electrons can be efficiently generated ions, therefore, possible to obtain a low electron temperature (6eV or less, preferably of 4eV or less) and more than 15V above energetic electrons significantly reduced plasma. 所以,原子团源用的气体不产生过剩的离解,能确保必要的质和量。 Therefore, a radical source gas does not generate excessive dissociation, to ensure the necessary quality and quantity. 另一方面,离子的量能够利用产生准稳定原子用的等离子发生室62所产生的准稳定原子量,和从离子·原子团源用的供气部60所供应的离子源用的气体束进行控制。 On the other hand, the amount of ions can be utilized to produce metastable atomic chamber 62 metastable atoms generated by the plasma generation, and the gas supply unit 60 from the beam-plasma radical source used in the ion source by the supplied controlled.

这样一来,就可以控制离子和原子团生成的质和量,使之在极微细的等离子处理时也能得到良好的性能。 Thus, it is possible to control the quality and quantity of ions and radicals generated, so when the plasma treatment of very fine good performance can be obtained. 作为原子团源用的气体,根据需要,在CHF3、CH2F2,C4F8或者是CF4等碳氟化合物气体中,混入相应的含C,H的气体(C2H4,CH4,CH3OH等)。 As a radical source gas used, if necessary, a fluorocarbon gas CHF3, CH2F2, C4F8, or CF4 or the like, mixed into the corresponding containing C, H gases (C2H4, CH4, CH3OH, etc.). 作为产生准稳定原子用的气体,要用一种至二种的稀有气体作为基础的气体。 Generating a metastable atoms with a gas, the use of one to two kinds of rare gas as the base gas. 作为离子源用的气体,由于使用具有下述性质的稀有气体等,所以能够有效地产生离子。 As the ion source for gas, the use of rare gas or the like having the following properties, it is possible to effectively generate ions.

所用气体的能级,与上述准稳定原子的能级相比,离子源用气体的电离能级低,或者,离子源用的气体的电离能级高但其差别小(5eV以下)。 The level of the gas used, compared to the quasi-stable energy levels of atoms, with a low ionization energy level of the ion source gas, or, an ion source for ionization level high gas but a small difference (of 5 eV or less).

作为离子源用的气体,其种类也可以不再特地追加,而采用上述准稳定原子发生用的气体和原子团源用的气体来代替,但性能有所下降。 As the ion source for gas, which may not be specifically added type, while the use of gas for the gas source for radicals and metastable atoms as described above in place, but with reduced performance.

其次,图38所示的是使用本发明来控制离子和原子团生成的质和量的其他实施例。 Secondly, the present invention is used to control the generation of ions and radicals quality and quantity of the other embodiment shown in FIG. 38. 它与图37的基本想法是相同的,但在图37里,产生准稳定原子用的等离子室62和真空处理室10之间的距离很长,其间的准稳定原子的衰减大,图38是针对这种情况所采取对策的实施例。 It is the basic idea of ​​FIG. 37 is the same, but in FIG. 37, the generated metastable atoms with a plasma chamber a distance between 62 and the vacuum processing chamber 10 is very long, large attenuation metastable atoms therebetween, FIG 38 is Example measures taken against this situation. 41是作为微波振荡源的磁控管、42是微波波导管、43是真空密封第一等离子生成室45并使微波通过的石英板,44是分散气体用的石英板。 41 is a magnetron microwave oscillation source, a microwave waveguide 42, a first seal 43 is the vacuum chamber 45 and the plasma generated by microwaves of the quartz plate, quartz plate 44 is dispersed in the gas. 在第一等离子生成室45中,利用上述的微波,在从数百mTorr到数十Torr的气压下产生等离子,产生准稳定原子。 In the first plasma generating chamber 45, using the microwave generated plasma in from hundreds mTorr to several tens Torr pressure generating metastable atoms.

图38中,和图37相比较,准稳定原子产生的场所和真空处理空间的距离能够缩短,所以能在高密度状态下把准稳定原子注入到真空处理室里,能增加真室处理室10中的离子量。 38, and 37 compared to the distance property and the vacuum processing space metastable atoms generated can be shortened, it is possible to metastable atoms implanted into the vacuum processing chamber in a high density state, can really increase the processing chamber 10 chamber the amount of ions. 处理室10保持5~50mTorr的压力,由20MHz以上的高频电源16,在5eV最好是3eV以下,生成1010~1011/cm3的高密度低电子温度等离子、能防止所需离解能量在8eV以上的CF2离解,能使离子源用的气体进行电离。 The processing chamber 10 to maintain the pressure of 5 ~ 50mTorr, high frequency power supply 20MHz from the above 16, preferably in 5eV 3eV or less, to generate a high density and low electron temperature of the plasma 1010 ~ 1011 / cm3, the dissociation energy required can be prevented in the above 8eV CF2 of dissociation, the gas can be ionized by the ion source. 其结果,在试样40的表面上,由偏压电源17以数百伏进行加速的离子入射后,产生的主要反应如下: After a result, on the surface of the sample 40, the incident ions accelerated by the bias power source 17 to several hundred volts, the main reaction is as follows:

作为底层材料的Si、SiN,在CF2中不被刻蚀,所以可能形成高选择比的氧化膜刻蚀。 As the base material of Si, SiN, is not etched in CF2, it is possible to form an oxide film etching selection ratio higher.

还有,由于离解了一部分CF2,所以F有所增加,这可通过由硅、碳或者SiC(碳化硅)等形成的上电极盖30使之减少。 Further, since a part of the dissociated CF2, so the increase in F, which may be reduced so that the cover 30 through the upper electrode is formed of silicon, carbon or SiC (silicon carbide) and the like.

如上所述,通过调节原子团源用的气体和离子源用气体,基本上能独立控制处理室10内的离子和原子团的比率,易于控制在试样40表面上的反应使其达到所期望的水平。 As described above, by adjusting the gas source and a gas ion source for radicals, substantially independently control the processing chamber 10 and the ion ratio in the atomic group is easy to control the reaction on the surface of the specimen 40 to reach the desired level .

本发明中的具备静电吸附电路和加脉冲偏压电路的等离子处理装置,增加了由CVD气体取代刻蚀气体等变化,所以不仅用于上述的刻蚀处理,也可用于CVD装置等其他等离子处理装置。 Includes a pulse circuit and an electrostatic attraction bias circuit of the plasma processing apparatus of the present invention, the change increases the etching gas substituted by the CVD gas, not only for the above-described etching process, may also be used for other processing such as plasma CVD apparatus device.

下面,图39是本发明用于独立控制离子和原子团的另一实施例。 Next, FIG 39 is another embodiment of the invention for independently controlling ions and radicals embodiments. 在图39中,把含C、H的气体(C2H4、CH3OH等)根据需要,混入到CHF3、CH2F2、C4F8或CF4等碳氟化合物气体中,由构成图39A的部分,通过阀70进入到产生原子团的等离子发生室62中。 In Figure 39, the gas (C2H4, CH3OH, etc.) containing C, H as required, mixed in a fluorocarbon gas CHF3, CH2F2, C4F8, or the like CF4, the moieties comprised of FIG. 39A proceeds to be generated by the valve 70 radicals plasma generating chamber 62.

在产生原子团的等离子发生室62里,把数兆赫(MHz)乃至数十兆赫(MHz)的RF(射频)电源63的输出加在线圈65上,用数百mTorr到数十Torr的气压来产生等离子,主要产生CF2原子团。 In the ion generation chamber 62 to produce radicals and the like, the number of output megahertz (MHz) to several tens of megahertz (MHz) of RF (radio frequency) power supply 63 is applied to the coil 65, with several tens of Torr to hundreds of mTorr pressure to produce plasma generated mainly CF2 radicals. 同时产生的CF3、F等物质由H成分使之减少。 While producing CF3, F and other substances so as to reduce the H component.

但是,因为要大幅度地减少产生原子团的等离子发生室62中的CF和O等成分是很困难的,所在要在其后边设置不需要成分除去室65。 However, due to the significantly reduce chamber 62 of plasma components such as CF and O radicals and the like is difficult to occur, where unnecessary components removed to chamber 65 is provided at its rear. 这个除去室的内壁材料采用含碳、硅(Si)的材质(碳、硅、碳化硅等),以减少不需要的成分,或是将其变换成不利影响少的其他气体。 The material of the inner wall of the chamber to remove carbon-containing, silicon (Si) material (carbon, silicon, silicon carbide, etc.), to reduce unwanted components, or converted into other gases to less adverse effects. 不需要成分除去室65的出口,连接阀门71,以提供以CF2成份的主的混合气体。 Removing undesirable components of the outlet chamber 65, the valve 71 is connected to provide a mixed gas of a main component CF2.

另外,在阀70和阀71之间,积存了很多沉积物等的堆积物,所以要经常清扫或更换。 Further, between the valve 70 and valve 71, such as sediment accumulated a lot of deposits, cleaned or replaced so often. 因此,为了容易进行大气开放和更换操作,同时也能缩短再起动时的抽真空时间,经由阀72连接了排气装置74。 Accordingly, in order to facilitate replacement operation and open to the atmosphere, but also to shorten the evacuation time of restart, the exhaust device 74 is connected via a valve 72. 排气装置74,也可兼用作处理室10的排气装置等。 Exhaust means 74, the exhaust gas may be also used as the processing chamber 10 and other means.

还有,离子源用的气体(氩气、氙气等稀有气体)B,经过阀73,和前面所述的阀71的出口相连接,使气体供给到处理室内。 Further, the ion source gas (argon, xenon and other noble gases) with B, through 73, and in front of said outlet valve is connected to the valve 71, the gas supplied to the processing chamber.

处理室10保持5~40mT的压力,利用经过调制的20MHz以上的高频电源16,在5eV,理想的是在3eV以下产生1010~1011/cm3的高密度低电子温度等离子,既能防止离解能量需要8eV以上的CF2的离解,又能进行离子源用气体的电离。 The processing chamber 10 to maintain the pressure 5 ~ 40mT, the use of more than 20MHz frequency power source modulated 16, of 5 eV, it is desirable to produce high density and low electron temperature of the plasma 1010 ~ 1011 / cm3 at 3eV or less, both to prevent the dissociation energy or more is required 8eV CF2 dissociation, but also for the gas ion source. 其结果,在试样40的表面上,用偏压电源17以数百伏进行加速的离子入射后,主要产生如下反应: As a result, on the surface of the sample 40, with the bias power source 17 is incident ions accelerated to several hundred volts, produces the following main reactions:

这样,作为底层材料的Si、SiN,不会被CF2刻蚀,所以能进行高选择比的氧化膜刻蚀。 Thus, as the base material of Si, SiN, etching is not CF2, it is possible to carry out an oxide film is etched in a high selectivity.

另外,因一部分CF2(氟化碳)的离解,使F(氟)有所增加,但由硅、碳或者碳化硅(SiC)所形成的上电极罩30会使F(氟)有所减少。 Further, because a part of CF2 (carbon fluoride) dissociation of the F (fluorine) increased, but the electrode cover made of silicon, carbon, or silicon carbide (SiC) 30 is formed will make F (fluorine) decrease.

如上所述,调节原子团用的气体A和离子源用的气体B,大体能够独立控制处理室10内离子和原子团的比率。 As described above, by adjusting the gas B a gas radicals A and an ion source used, the ratio generally can be independently controlled processing chamber 10 of the ions and radicals. 容易对试样40表面的反应按其理想的水平加以控制。 The reaction surface of the sample 40 is easy to be controlled according to its desired level. 另外,不必要的堆积物等利用不需要成分除去室65来排除,尽量不把这些多余成分带入处理室10里,所以大幅度减小了处理室10内的沉积物,把处理室打开为大气状态进行清扫的频度也已大幅降低。 Further, unnecessary deposits and the like that does not require removal of the component chamber 65 to exclude, as far as possible without these extra ingredients into the processing chamber 10 where it is greatly reduced deposits within the processing chamber 10, the processing chamber is opened the frequency of cleaning of atmospheric conditions has also been significantly reduced.

下面,图40所示的是独立控制离子和原子团的其他实例。 Here, examples of other ions and radicals independently control shown in FIG. 40. 六氟丙烯气体(CF3CFOCF2,以下简称为HFPO),由A经过阀70,通向加热管道部66,经过多余(不需要)成分除去室65和阀71与离子源气体B混合,送到处理室10的方向。 Hexafluoropropylene gas (CF3CFOCF2, hereinafter referred to as HFPO), A through valve 70, leading to the heating duct portion 66, through the extra (not required) component mixing valve 71 and the ion source chamber 65 and removal of the gas B, the processing chamber is pumped by direction 10. 在加热管道部66处,把HFPO加热到800℃~1000℃,使之热分解生成CF2。 In the heat pipe portion 66, the HFPO was heated to 800 ℃ ~ 1000 ℃, so that thermal decomposition CF2.

CF3CFO是比较稳定的不易分解的物质,但会部分分解生成不需要的氧(O)和氟(F),因此在加热管部66的后面设置了多余成分去除室65,以除掉多余成分,或者把它转换成无不良影响的物质。 CF3CFO relatively stable substance difficult to decompose, but the partially decomposed unwanted oxygen (O) and fluorine (F.), And therefore the rear portion of the heating tube 66 is provided unwanted ingredients removal chamber 65, to remove the unwanted ingredients, or convert it to not adversely affect the substance. 一部分没有分解的CF3CFOCF2流入到处理室10内,但因其在5eV以下的低电子温度的等离子中不会离解,所以不成问题。 No decomposition CF3CFOCF2 portion flows into the processing chamber 10, but because not dissociated, so no problem in following the ion 5eV low electron temperature and the like.

阀门72、排气装置74的用法以及在处理室10内的反应与图39的场合相同。 Valves 72, exhaust means 74 use the same case and react with the processing chamber 10 in FIG. 39.

本发明的具有静电吸附电路和加脉冲偏压电路的等离子处理装置,如另外用CVD气体来取代刻蚀气体的话,则不仅用于以上所述的刻蚀处理,也可用于CVD等其他等离子处理装置。 The plasma processing apparatus having a pulse circuit and an electrostatic attraction bias circuit of the present invention, as further substituted by a CVD gas etching gas, then not only for the etching process described above, can also be used for other processing such as plasma CVD device.

Claims (31)

1.一种等离子处理机,在具有:真空处理室;包含一对电极的等离子体生成装置;试样台,它具有试样放置面,用于放置要在该真空处理室内处理的试样;以及对上述真空处理室抽真空减压的减压装置的等离子处理机中,其特征在于,还具有:高频电源,用于在上述一对电极之间加30MHz-300MHz的VHF频带的高频功率;以及磁场形成装置,用于形成静磁场或低频磁场,该磁场形成的方向与利用上述高频电源在上述一对电极之间或其附近生成的电场相交叉,在上述两个电极之间利用上述磁场和上述电场的相互作用来形成电子回旋加速共振区。 1. A plasma processor, having: a vacuum processing chamber; comprising a pair of electrodes of a plasma generating means; sample stage having a sample placement surface for placing a sample within the vacuum processing chamber for processing; ions and decompression processor means for evacuating the vacuum pressure of the process chamber or the like, characterized by further comprising: a high frequency power supply, plus the VHF band for the 30MHz-300MHz in frequency between the pair of electrodes power; and a magnetic field forming means for forming a static or low frequency magnetic field, the direction of the magnetic field and the electric field formed in the vicinity of or generated between the pair of electrodes by using the high-frequency power source intersect, between the two electrodes using interaction between said electric field and the magnetic field to form the electron cyclotron resonance region.
2.一种等离子处理机,在具有:真空处理室;包含一对电极的等离子生成装置;试样台,兼用作上述电极之一,同时用于放置要在该真空处理室内处理的试样;以及对上述真空处理室进行抽真空减压的减压装置的等离子处理机中,其特征在于,还具有:高频电源,用于在上述一对电极之间加50MHz-200MHz的VHF频带电源;以及磁场形成装置,用于形成17高斯以上72高斯以下的静磁场或低频磁场的部分,该磁场形成的方向与利用上述高频电源在上述一对电极之间或其附近生成的电场相交叉,对上述磁场形成装置进行适当设定,以便使上述磁场在沿试样台面的方向的成分的最大部分位于试样台的对面一侧,即超过上述两个电极的中央的位置上,在上述一对电极之间利用上述磁场和电场的相互作用来形成电子回旋加速共振区。 A plasma processor, having: a vacuum processing chamber; comprising a pair of electrodes of the plasma generating device; sample table, and serves as one of the electrodes, and for placing the sample to be processed in the vacuum processing chamber; ion processor means and the pressure chamber of the vacuum evacuating process and the like in a reduced pressure, characterized by, further comprising: a high frequency power source for the pair of electrodes between plus 50MHz-200MHz frequency band of the VHF power; and a magnetic field forming means for partially or static magnetic field of 72 gauss low frequency less than 17 Gauss is formed, the direction of the magnetic field and the electric field formed in the vicinity of or generated between the pair of electrodes by using the high-frequency power source intersect, for the position of the center of the magnetic field forming means is set properly, so that the largest part of the magnetic field component in the direction of the sample table is located on the opposite side of the sample stage, i.e., more than two electrodes on the above, the pair of It is formed using electron cyclotron resonance region and the interactions between the aforementioned magnetic field between the electrodes.
3.如权利要求1或权利要求2所述的等离子处理机,其特征在于,由上述磁场形成装置形成的磁场的强度,被调整到在上述试样面上与该面相平行的磁场成分为30高斯以下。 3. The plasma processor of claim 21 or claims, characterized in that the strength of the magnetic field forming means is formed by the magnetic field is adjusted to the sample surface of the surface parallel to the magnetic field component of 30 gauss or less.
4.一种等离子处理机,在具有:真空处理室;包含一对电极的等离子生成装置;以及试样台(兼用作上述电极之一,同时用于放置要在该真空处理室内处理的试样)的等离子处理机中,其特征在于,上述电极由连接高频电源的第1电极和下述第2电极构成,该第2电极兼用作上述试样台,同时与离子能量控制用偏压电源相连接,上述一对电极之间的距离为30-100mm,还具有:减压装置,用于把上述真空处理室内的气压降低到0.4Pa-4Pa;上述高频电源,用于在上述一对电极之间加30MHz-300MHz的VHF频带电源;以及磁场形成装置,用于在与上述一对电极之间或其附近的电场相交叉的方向上,形成10高斯以上110高斯以下的静磁场或低频磁场部分,在上述第1电极面上或者越过两个电极的中央位置在上述第1电极一侧,利用上述磁场和由上述高频电源形成的电场的相互作用来形 A plasma processor, having: a vacuum processing chamber; comprising a pair of electrodes of the plasma generating device; and a sample stage (also serving as one of the electrodes, while a sample to be placed for processing in the vacuum processing chamber ) plasma processing machine, wherein the electrode is a first electrode and a second electrode connected below the high-frequency power supply configuration, the second electrode also serves as the sample table while a bias power source and the ion energy control is connected, the distance between the pair of electrodes is 30-100mm, further comprising: a decompression means for reducing the pressure of the vacuum processing chamber to 0.4Pa-4Pa; the high-frequency power source for the pair of plus 30MHz-300MHz band VHF power between the electrodes; and a magnetic field forming means in a direction to close an electric field between the pair of electrodes, or intersect, forming more than 10 gauss 110 gauss or less of the static magnetic field or low frequency portion, the surface of the first electrode or two electrodes over the center position in the first electrode side to form the interaction of the electric field and the magnetic field formed by the high-frequency power source of the 成电子回旋加速共振区。 To the electron cyclotron resonance region.
5.如权利要求1、2或4所述的等离子处理机,其特征在于,对由上述磁场形成装置所形成的上述磁场的密度或方向进行调节,以便使上述电子回旋加速共振效应在试样的周围及其外侧大于在上述试样的中央,另外,使等离子体密度在对应于上述整个试样放置面的位置上均匀一致。 5. The plasma processor as claimed in claim 1, 2 or 4, characterized in that the density or the magnetic field direction of the magnetic field formed by the forming apparatus is adjusted so that the electron cyclotron resonance effect in the sample its outer periphery is larger than at the center of the sample. Further, the plasma density at the position corresponding to the placement of the entire surface of the upper sample uniform.
6.如权利要求4所述的等离子处理机,其特征在于,上述磁场形成装置内的磁心相对于上述试样面的中心进行偏心旋转,以改变上述磁场,连续改变上述回旋加速共振区离开上述试样的距离。 6. The plasma processor as claimed in claim 4, wherein the magnetic field formed in the magnetic core means relative to the eccentrically rotation of the center of the sample surface, to vary the magnetic field, continuously changing said cyclotron resonance zone away from the sample distance.
7.一种等离子处理机,在具有:真空处理室;包含一对电极的等离子体生成装置;试样台,它具有试样放置面,用于放置要在该真空处理室中处理的试样;以及减压装置(用于对上述真空处理室抽真空减压)的等离子处理机中,其特征在于,上述电极的构成部分有:连接高频电源的第1电极、兼用作试样台的第2电极、以及位于上述第1电极的周围外侧并接地的处理室壁部,该等离子处理机还具有:高频电源,用于在上述一对电极之间和上述第1电极和上述处理室壁部之间,加上30MHz-300MHz的VHF频带的高频功率;以及磁场形成装置,用于形成10高斯以上110高斯以下的静磁场或低频磁场部分,该磁场形成的方向是,在上述处理室中心附近互相抵消,在上述处理室的周围和外侧互相重叠,在上述试样放置面的周围及其外侧附近,利用上述磁场与上述高频电源所形成 A plasma processor, having: a vacuum processing chamber; comprising a pair of electrodes of the plasma generation device; sample stage having a sample placement surface for placing a sample to be processed in the vacuum processing chamber ; decompression means and a plasma processing unit (process chamber for evacuating the vacuum pressure) in, wherein the electrode components are: a high-frequency power source connected to the first electrode, and used as the sample stage a second electrode, and a processing chamber wall portion located on the outer periphery of the first electrode and a grounded, the plasma processor further comprising: a high frequency power supply, and for the first electrode and the process chamber between the pair of electrodes between the wall portions, with a high frequency power of the VHF band of 30MHz-300MHz; and a magnetic field forming means for forming a static or low frequency magnetic field of 10 gauss portion 110 gauss or less, the direction of the magnetic field is formed, in the processing cancel each other near the center of the room, and overlap each other around the outside of the process chamber, in the vicinity of the sample surface is disposed around the outer side and, using the magnetic field and the high frequency power source is formed 的电场的相互作用来形成电子回旋加速共振区。 Interaction of the electric field to form electron cyclotron resonance region.
8.如权利要求7所述的等离子处理机,其特征在于,上述磁场形成装置具有多个线圈,并且均安装在上述处理室的周围,能使磁通在上述试样的中央附近互相抵消,在该试样的周围及其外侧互相重叠。 8. The plasma processor according to claim 7, wherein the magnetic field forming means having a plurality of coils, and are mounted around the process chamber, the magnetic flux can cancel each other near the center of the sample, its overlap around the outside of the sample.
9.如权利要求4所述的等离子处理机,其特征在于,周期为0.2-5μs,正向脉冲部分的占空比为0.4以下的脉冲偏压,作为上述离子能量控制用的偏压电流,通过电容元件加到上述试样上。 9. The plasma processor as claimed in claim 4, wherein the period is 0.2-5μs, the duty ratio of the positive pulse portion of the pulse bias is 0.4 or less, control of ion energy as the bias current, applied to the sample by the capacitive element.
10.权利要求1、2或4所述的等离子处理机,其特征在于具有:静电吸附装置,用于借助静电吸附力把上述试样固定在上述试样台上;加脉冲偏压装置,它连接在上述试样台上,用于向该试样台加脉冲偏压;以及电压抑制装置,用于抑制随着加脉冲偏压,对应于上述静电吸附装置的静电吸附容量而产生的电压上升。 10. The plasma processor of claim 1 or claim 4, characterized by having: an electrostatic adsorption means is fixed to the sample in the sample by means of electrostatic adsorption force for the stage; pulsed biasing means which connected to the sample table, sample table for applying a pulse to the bias voltage; and a voltage rises as the pulsed bias voltage corresponding to the electrostatic adsorption capacity of the electrostatic adsorption device generates a voltage suppressing means for suppressing .
11.权利要求10所述的等离子处理机,其特征在于,上述电压抑制装置的构成方法是,把脉冲的一个周期中的静电吸附装置的静电吸附膜所产生的电压变化,抑制在上述脉冲偏压的1/2以下。 11. The plasma processor of claim 10 or the like, wherein the voltage suppressing means is a method of configuration, the changes in membrane voltage static electricity generated electrostatic attraction means a pulse period of adsorption, the partial inhibition of the pulse pressure of 1/2 or less.
12.一种等离子处理方法,其特征在于,在具有:真空处理室;包含一对电极的等离子体生成装置;试样台,兼用作上述电极之一,同时用于放置要在该真空处理室内处理的试样;以及减压装置(用于降低上述真空处理室内的压力)的等离子处理机的试样处理方法中包括以下程序步骤:利用减压装置来降低上述真空处理室内的压力;利用磁场形成装置在与上述一对电极间的电场相交叉的方向上形成10高斯以上110高斯以下的静磁场或低频磁场部分;利用高频电源在上述一对电极之间加上30MHz-300MHz的VHF频带电源,在上述两个电极之间,利用上述磁场和上述高频电源所形成的电场的相互作用,形成电子回旋加速共振区;利用由上述电子回旋加速共振所生成的等离子体来对上述试样进行处理。 12. A plasma processing method characterized in that: a vacuum processing chamber; comprising a pair of electrodes of the plasma generation device; sample table, and serves as one of the electrodes, while for placement in the vacuum processing chamber to the sample processing; sample processing method, and a vacuum means (for reducing the pressure of the vacuum processing chamber) plasma processor includes the following procedural steps: reducing pressure in the vacuum processing chamber using a pressure reducing device; using a magnetic field It means forming a static magnetic field or low frequency magnetic field of 10 gauss or more portions of 110 gauss or less in the direction of the electric field between the pair of electrodes crossing; a high-frequency power between the pair of electrodes plus the VHF band of 30MHz-300MHz power, between the two electrodes, an electric field using the magnetic interaction and the high-frequency power supply is formed, to form an electron cyclotron resonance region; by the use of electron cyclotron resonance plasma generated from the sample to for processing.
13.一种等离子处理方法,其特征在于,在具有真空处理室,放置要在该真空处理室内处理的试样所用的试样台、以及包含一对电极的等离子体生成装置的等离子处理机的试样等离子处理方法中,上述电极的构成为一对电极,其中包括:连接上述高频电源的第1电极、和兼用作上述试样台同时与离子能量控制用偏压电源相连接的第2电极,这一对电极之间的距离为30-100mm,包括下列程序步骤:利用减压装置把上述真空处理室内的气压降低到0.4Pa-4Pa;利用磁场形成装置在与上述一对电极之间的电场相交叉的方向上,形成10高斯以上110高斯以下的静磁场或低频磁场部分;利用高频电源在上述一对电极之间加上30MHz-300MHz的VHF频带电源,利用上述磁场和由上述高频电源产生的电场的相互作用,在上述一对电极之间形成电子回旋加速共振区;利用由上述电子回旋加 13. A plasma processing method characterized in that, in a processor having a vacuum plasma processing chamber, means disposed to be generated in the sample stage of the vacuum process chamber treated sample used, and a plasma comprising a pair of electrodes and the like sample plasma processing method, the electrode is composed of a pair of electrodes, which comprises: a first electrode connected to the high-frequency power source, and also serves as the sample table while controlling the second ion energy and a bias power supply connected to electrodes, the distance between the pair of electrodes 30-100mm, comprising the following procedural steps: using a pressure reducing device to reduce the pressure of the vacuum processing chamber to 0.4Pa-4Pa; means between the pair of electrodes is formed using a magnetic field the direction crossing the electric field, a static magnetic field or a low frequency magnetic part 10 gauss 110 gauss or less; using VHF band high frequency power supply coupled 30MHz-300MHz between the pair of electrodes, and by the use of the magnetic field interaction of the electric field generated by high frequency power source, an electron cyclotron resonance region between the pair of electrodes; by the use of electron cyclotron plus 共振所生成的等离子体来对上述试样进行处理。 The resonance generated plasma to process the above samples.
14.一种等离子处理机,其特征在于,是具有真空处理室、为放置要在真空处理室内处理的试样所用的试样台、以及包含高频电源的等离子体生成装置的等离子体处理机,具有:静电吸附装置,用于借助静电吸附力把上述试样固定在上述试样台上;以及加脉冲偏压装置,用于在上述试样上加脉冲偏压,另外,作为上述高频电源加上10MHz-500MHz的高频电压,同时把上述真空处理室内的气压降低到0.5Pa-4Pa。 14. A plasma processor, comprising a vacuum processing chamber having a plasma processor means to generate a sample in a sample table vacuum processing chamber is used for treatment, and a plasma comprises high frequency power source to be placed , comprising: an electrostatic adsorption device for the electrostatic attraction force by the sample fixed to the sample stage; and pulsed biasing means for biasing said pulsed sample, Further, as the high-frequency supply voltage plus 10MHz-500MHz frequency, while reducing the pressure in the vacuum processing chamber to 0.5Pa-4Pa.
15.一种等离子处理机,其特征在于包括:一对对面安装的电极,其中一个电极上放置试样;气体导入装置,用于把腐蚀气体送入放置了上述试样的处理室内(周围气体中);排气装置,用于把上述处理室内的气压降低到0.5-4Pa;高频电源,用于在上述一对对面电极上加上10MHz-500MHz的高频电压;等离子体生成装置,用于在上述压力下使上述腐蚀气体变成等离子体(进行等离子化);加脉冲偏压装置,用于在对上述试样进行腐蚀时把脉冲偏压加到上述1个电极上;另外对上述试样中的绝缘膜进行等离子处理。 15. A plasma processor, comprising: a pair of electrode mounting surface, wherein a sample is placed on the electrode; gas introducing means for etching gas into the processing chamber is placed in the sample (ambient gas in); exhaust means for reducing the processing chamber pressure to 0.5-4Pa; high frequency power supply coupled to 10MHz-500MHz surface on said pair of electrodes a high frequency voltage; plasma generation device, with in the above-described to cause the pressure of the etching gas into plasma (plasma technology); pulsed biasing means for etching of the sample when the pulse bias is applied to said one electrode; addition to the above-described insulating film sample plasma treatment.
16.一种等离子处理机,是具有真空处理室、为放置要在该真空处理室内处理的试样所用的试样台、以及等离子体生成装置的等离子处理机,其特征在于,具有:静电吸附装置,用于借助静电吸附力把上述试样固定在上述试样台上;加脉冲偏压装置,它连接在上述试样台上,用于对该试样台加脉冲偏压;电压抑制装置,用于抑制随着加脉冲偏压,对应于上述静电吸附装置的静电吸附容量而产生的电压上升;上述电压抑制装置的构成方法是,脉冲的一个周期中的上述静电吸附装置的静电吸附膜所产生的电压变化,被抑制在上述脉冲偏压的1/2以下。 16. A plasma processor, having a vacuum processing chamber, means to be placed in the sample to generate a sample stage in the vacuum processing chamber is used for treatment, and a plasma plasma processor, comprising: a electrostatic adsorption means for the electrostatic attraction force by the sample fixed to the sample stage; pulsed biasing means, which is connected to the sample table, sample table for the pulsed bias voltage; voltage suppression means , as for suppressing pulsed bias voltage corresponding to the electrostatic adsorption capacity of the electrostatic adsorption device generates a voltage rise; configuration method of the voltage suppressing means is a static period of the pulses in the electrostatic adsorption film adsorption device voltage variations generated is suppressed to 1/2 or less of the pulse bias.
17.一种等离子处理机,其特征在于具有:一对电极,其间隙为10-50mm,互相对面配置;静电吸附装置,用于借助静电吸附力来把试样固定在一个上述电极上;气体导入装置,用于把腐蚀气体送入到放置了上述试样的处理室内的试样周围气体中;排气装置,用于把试样周围的气压降低到0.5-4.0Pa;等离子生成装置,用于利用10MHz-500MHz的高频功率在上述压力下对上述腐蚀气体进行离子化;以及加脉冲偏压装置,用于把脉冲偏压加到放置了上述试样的一个电极上;另外,对上述试样中的绝缘膜进行等离子处理。 17. A plasma processor, comprising: a pair of electrodes, the gap of 10-50mm, arranged opposite each other; electrostatic adsorption means by means of electrostatic adsorption force for the sample was fixed to one of said electrodes; gas introducing means for a sample of ambient gas to the etching gas into the sample placed in the processing chamber; exhaust means for reducing the pressure around the samples to 0.5-4.0Pa; plasma generation means for in the above-mentioned etching gas is ionized at a pressure above the high-frequency power of 10MHz-500MHz; and pulsed biasing means for biasing the pulse applied to the electrodes placed on one of the sample; Further, the above-described insulating film sample plasma treatment.
18.如权利要求16或17所述的等离子处理机,其特征在于,设置了电压抑制装置,用来抑制随着施加上述脉冲偏压而与上述静电吸附装置的静电吸附容量相对应地产生的电压上升,把上述脉冲偏压的周期设定到能使由脉冲的一个周期中的上述静电吸附装置的静电吸附膜所产生的电压变化被上述电压抑制装置抑制在上述脉冲偏压的1/2以下。 18. The plasma processor as claimed in claim 16 or 17, etc., characterized in that a voltage suppression means for suppressing the pulse is applied as the bias voltage is generated corresponding to the electrostatic capacitance of the electrostatic adsorption of the adsorption device voltage rises, the bias of the pulse period is set to the voltage variation enables the electrostatic adsorption film of the electrostatic adsorption means in a period of the pulse generated is suppressed to suppress the pulse of the voltage bias means 1/2 the following.
19.一种等离子处理方法,其特征在于包括以下处理程序步骤:把试样放置在真空处理室内的一个电极上;利用静电吸附力把试样固定在上述电极上;把处理气体送入到放置了上述试样的处理室内气体中;把上述试样周围的气体压力降低到试样处理所需的压力;在上述压力下对上述处理气体进行等离子化;利用上述等离子体来对该试样进行处理;把脉冲偏压加到上述试样上。 19. A plasma processing method comprising the steps of processing procedure: the sample is placed in a vacuum processing chamber electrode; The specimen is fixed on the electrode by electrostatic attraction; the process gas is fed to the drop a process chamber in the sample gas; the pressure of the gas surrounding the sample is reduced to the pressure required for processing a sample; the above-described process of plasma gas at said pressure; to the use of the plasma sample process; the pulse bias is applied to said sample.
20.一种等离子处理方法,其特征在于具有以下处理程序步骤:把试样放置到间隙为10mm-50mm的一对对面放置的电极之一上;利用静电吸附力把放置到电极上的试样固定到该电极上;把腐蚀气体送入到已放入了上述试样的周围气体中;把上述周围气体的压力减小到0.5-4.0Pa;加上10MHz-500MHz的高频功率,在上述气压下对上述腐蚀气体进行等离子化;利用该等离子体来腐蚀上述试样;在进行这种腐蚀时把脉冲偏压加到上述一个电极上,以此,对上述试样中的绝缘膜进行等离子处理。 20. A plasma processing method, wherein the step of having the processing program: The sample was placed on one of the electrode gap is 10mm-50mm pair of surfaces disposed; by electrostatic attraction to the electrodes placed on the sample secured to the electrode; has been fed into the etching gas into the ambient gas in the sample; the pressure of the surrounding gas is reduced to 0.5-4.0Pa; 10MHz-500MHz frequency power plus, in the above under the above etching gas pressure of the plasma; etched by the plasma of the sample; during this etching to a pulse bias is applied to said electrode, thereby, the sample of the plasma insulating film deal with.
21.一种等离子处理方法,其特征在于具有以下处理程序步骤:把试样放置到安装在真空处理室中的一对电极中的一个电极上;利用静电吸附力把该试样固定到上述电极上;把腐蚀气体送入到放入了上述试样的周围气体中;把上述周围气体的压力减小;在该低气压下对腐蚀气体进行等离子化;利用该等离子体对该试样进行腐蚀;把脉冲偏压加到上述试样上,这样,在施加上述脉冲偏压时脉冲的一个周期中的上述静电吸附装置的静电吸附膜所产生的电压变化被抑制在上述脉冲偏压的1/2以下。 21. A plasma processing method, wherein the step of having the processing program: The sample was placed on a pair of electrodes mounted in a vacuum chamber in the process; by electrostatic attraction to the specimen holder to said electrode on; the etching gas into the ambient gas is fed into said sample; and the pressure of the surrounding gas is reduced; gas corrosion at the low pressure of the plasma; by the plasma etching of the sample ; the above-described pulse bias applied to the sample, so that the voltage change of the electrostatic adsorption film of the electrostatic adsorption means in one cycle of the pulse bias is applied to the pulse generated in the pulse bias is suppressed in 1 / 2.
22.一种等离子处理方法,其特征在于包括下列处理程序步骤;把试样放置到二个对面电极中的一个电极上;利用静电吸附力把已放上的试样固定在上述电极上;把腐蚀气体送入到放有上述试样的处理室内的气体中;对送入的腐蚀气体进行等离子化;利用该等离子体来对上述试样进行腐蚀;在进行这种腐蚀时把250V-1000V的脉冲宽度和0.05-0.4占空比的脉冲偏压加到上述一个电极上,这样,对上述试样中的绝缘膜进行等离子处理。 22. A plasma processing method characterized by comprising the step of processing program; the sample is placed on an electrode of the opposite two electrodes; by electrostatic attraction of the specimen holder has been placed on the electrode; the etching gas is fed to the discharge of the sample processing chamber with a gas; fed to the plasma of the etching gas; by the plasma etching is performed on the sample; 250V-1000V during the etching of this 0.05-0.4 pulse width and duty cycle pulsed bias applied to the one electrode, so that, on the insulating film in the sample subjected to plasma processing.
23.一种等离子处理机,是具有真空处理室、为放置要在该真空处理室内处理的试样所用的试样台、以及等离子生成装置的等离子处理机,其特征在于,还备有:静电吸附装置,用于借助静电吸附力把上述试样固定在上述试样台上;加偏压装置,用于把偏压加到上述试样台上;原子团供给装置,它具有预先分解原子团发生用气体的装置,并把所需数量的原子团供给到上述真空处理室内;供气装置,用于把离子发生用气体供给到上述真空处理室内;以及等离子体生成装置,用于在上述真空处理室内发生等离子体,并且,利用SiO2工作为上述试样。 23. A plasma processor, having a vacuum processing chamber, an ion generating apparatus and the like to the processor in the sample table vacuum treated sample treatment chamber used, and plasma to be placed, characterized by further comprising: an electrostatic suction means for the electrostatic attraction force by the sample fixed to the sample stage; biasing means for biasing applied to the sample stage; radicals feeding means, having previously decomposing radical-generating It means a gas, and the required number of radicals supplied to the vacuum processing chamber; gas supply means for supplying the plasma generating chamber to said vacuum processing gas; and a plasma generating means for generating in the vacuum processing chamber plasma, and, using SiO2 as the sample work.
24.一种等离子处理机,是具有真空处理室,为放置要在该真空处理室内处理的试样所用的试样台、以及等离子体生成装置的等离子处理机,其特征在于另外还具有:静电吸附装置,用于借助静电吸附力把上述试样固定到上述试样台上;加脉冲偏压装置,用于把脉冲偏压加到上述试样上;原子团发生用等离子体供给装置,用于在上述真空处理室内预先对原子团发生用气体进行等离子化,供给所需数量的原子团;等离子体生成装置,用于把离子发生用气体供给到上述真空处理室内并发生等离子体,并且,利用SiO2作为上述试样。 24. A plasma processor, having a vacuum processing chamber, plasma machines and the like to be generated in the device the sample table vacuum sample processing chamber used for processing, and a plasma to be placed, characterized by additionally comprising: an electrostatic suction means for the electrostatic attraction force by the sample is fixed to said sample stage; pulsed biasing means for the pulsed bias applied to the sample; radicals plasma supply device occurs, for radicals occurs in advance in the vacuum processing chamber with a gas plasma of, supplying a desired amount of radicals; plasma generating means for supplying the plasma generating gas to said vacuum processing chamber and plasma generation, and the use of SiO2 as the sample.
25.一种等离子处理机,是具有真空处理室、为放置要在该真空处理室内处理的试样所用的试样台、以及包含高频电源在内的等离子生成装置的等离子处理机,其特征在于另外还具有:静电吸附装置,用于借助静电吸附力把上述试样固定在上述试样台上;加脉冲偏压装置,用于把脉冲偏压加到上述试样上;原子团发生用等离子体供给装置,用于在上述真空处理室内预先对原子团发生用气体进行等离子化,供给所需数量的原子团;等离子体生成装置,用于供给离子发生用气体,并在上述真空处理室内发生等离子体,并且,把10MHz-500MHz的高频电压加到上述高频电源上,同时把上述真空处理室内的压力降低到0.5-4.0Pa。 25. A plasma processor, having a vacuum processing chamber, generating device to be placed to the sample table in the vacuum chamber of the sample processing process used, and the high frequency power source comprising a plasma including plasma processing machine, characterized additionally comprising: a electrostatic adsorption means for the electrostatic attraction force by the sample fixed to the sample stage; pulsed biasing means for the pulsed bias applied to the sample; plasma radicals occur supplying means for the vacuum processing chamber in advance radicals occurrence of a gas plasma, supplying a desired amount of radicals; plasma generating means for supplying plasma-generating gas, and the vacuum occurs in the plasma processing chamber and, the 10MHz-500MHz frequency voltage is applied to the high-frequency power source, while the pressure in the vacuum processing chamber is reduced to 0.5-4.0Pa.
26.一种等离子处理装置,是具有真空处理室、为放置要在该真空处理室内处理的试样所用的试样台、以及等离子体生成装置的等离子处理机,其特征在于还备有:静电吸附装置,用于借助静电吸附力把上述试样固定到上述试样台上;原子团发生用等离子体供给装置,用于在上述真空处理室内预先对原子团发生用气体进行等离子化,供给所需数量的原子团;等离子体生成装置,用于供给离子发生用气体,并在上述真空处理室内发生等离子体;加脉冲偏压装置,它连接上述试样台,用于把脉冲偏压加到该试样台上;以及电压抑制装置,用于抑制随着加上述脉冲偏压而对应于上述静电吸附装置的静电吸附容量所产生的电压上升。 26. A plasma processing apparatus having a vacuum processing chamber, means for generating plasma or the like of the sample handler in the sample table vacuum processing chamber is used for treatment, and a plasma to be placed, characterized by further provided with: an electrostatic suction means for the electrostatic attraction force by the sample is fixed to said sample stage; radicals supplying plasma-generating means for radicals in advance occurrence of the plasma gas in the vacuum processing chamber, supplying a desired quantity radicals; plasma generating means for supplying a plasma generating gas, and the vacuum occurs in the plasma processing chamber; pulsed biasing means coupled sample table for the pulsed bias voltage is applied to the sample stage; and a voltage suppressing means for suppressing the pulse voltage applied as the bias means corresponding to said electrostatic adsorption generated by an electrostatic adsorption capacity increases.
27.一种等离子处理机,是具有真空处理室、为放置要在该真空处理室内处理的试样所用的试样台、以及等离子体生成装置的等离子处理机,其特征在于还具有:静电吸附装置,它包括设置在上述试样台上的静电吸附膜,用于借助静电吸附力把上述试样固定到上述试样台上;原子团发生用等离子体供给装置,用于在上述真空处理室内预先对原子团发生用气体进行等离子化,供给所需数量的原子团;等离子体生成装置,用于供给离子发生用气体,并在上述真空处理室内发生等离子体;加脉冲偏压装置,它连接在上述试样台上,用于把脉冲偏压加到该试样台上;电压抑制装置,用于抑制随着施加上述脉冲偏压而在上述静电吸附膜的两端之间产生的电压,并且,该电压抑制装置把上述静电吸附装置的静电吸附膜所生成的电压抑制在上述脉冲偏压的1/2以下。 27. A plasma processor, having a vacuum processing chamber, plasma machines and the like to be generated in the device the sample table vacuum sample processing chamber used for processing, and a plasma to be placed, characterized by further comprising: an electrostatic adsorption apparatus, which includes a sample table electrostatic adsorption film, the electrostatic adsorption force for the means of fixing the sample to said sample stage; radicals-generating plasma supplying means for pre-processing in the vacuum chamber occurrence of the radicals of the plasma gas, supplying a desired amount of radicals; plasma generating means for supplying plasma-generating gas, and a plasma process occurs in the vacuum chamber; pulsed biasing means, which is connected in the above test sample stage, a pulse bias voltage is applied to the sample stage; voltage suppression means for suppressing voltage as the bias voltage applied to the pulse generated at both ends of the electrostatic attraction between the film and the the voltage suppression device of the electrostatic adsorption device electrostatic adsorption voltage generated by the film is suppressed to 1/2 or less of the pulse bias.
28.一种等离子处理方法,其特征在于包括以下处理程序步骤:把试样放置在一对对面电极中的一个电极上;利用静电吸附力把已放上的该试样固定到上述电极上;在放置并固定上述试样的位置的周围气体中预先对原子团发生气体进行等离子化,供给所需数量的原子团;把离子发生用气体供给到上述位置的周围气体中;把上述位置的周围气压降低到0.5-4.0Pa;把10MHz-500MHz的高频电压加到上述一对对面电极上,在上述气压下对供给的离子发生用气体进行等离子化;利用该等离子体对上述试样进行腐蚀处理;在进行这种腐蚀处理时把脉冲偏压加到上述一个电极上,并且,上述试样采用SiO2。 28. A plasma processing method comprising the steps of processing procedure: The sample was placed on a pair of surface electrodes on the electrode; by electrostatic attraction to have been placed in the sample holder to said electrode; placing and fixing the position of the sample of ambient gas is required in advance radicals generated gas plasma of, supplying the number of radicals; the ion generator is supplied to the position of the gas in the surrounding gas; to reduce the surrounding pressure of the position of to 0.5-4.0Pa; the 10MHz-500MHz frequency voltage is applied to the surface of the above-described pair of electrodes, under the above atmospheric pressure ion the supply of plasma generating gas; the sample by using the plasma etching process; this etching process is performed when the pulse bias is applied to said one electrode, and the sample using SiO2.
29.一种等离子处理方法,其特征在于包括以下处理程序步骤:把试样放置到安装在真空处理室内的一对电极中的一个电极上;利用静电吸附力把该试样固定在上述电极上;在放置并固定上述试样的位置的周围气体中,预先对原子团发生用气体进行等离子化,供给所需数量的原子团;把离子发生用气体供给到上述位置的周围气体中;把30MHz-100MHz的高频电压加到上述位置的周围气体中,在上述气压下对供给的离子发生用气体进行等离子化;利用上述等离子体来处理该试样;把脉冲电压加到上述试样上,并且,上述试样采用SiO2。 29. A plasma processing method comprising the steps of processing procedure: The sample was placed on a pair of electrodes installed in the vacuum processing chamber; by electrostatic attraction to the specimen holder on the electrodes ; around the gas is placed and fixed the sample position in advance of the radicals occurrence gas into plasma, a desired amount of radicals supplied; the ion generator is supplied to the position of the gas in the surrounding gas; the 30MHz-100MHz the high frequency voltage applied to the position of the surrounding gas, at the above atmospheric pressure ion the supply of plasma generating gas; the sample was treated using the plasma; a pulse voltage is applied to the sample, and, the sample using SiO2.
30.一种等离子处理方法,其特征在于包括下列处理程序步骤:把试样放置在真空处理室内的一对电极中的一个电极上;利用静电吸附力把该试样固定在上述电极上;在放置并固定上述试样的位置的周围气体中,预先对原子团发生用气体进行等离子化,供给所需数量的原子团;把离子发生用气体供给到上述位置的周围气体中;把上述位置的周围气压降低到上述试样处理所需的压力;在上述气压下对已供给的离子发生用气体进行等离子化;利用上述等离子体来处理该试样,把脉冲偏压加到上述试样上,并且,使上述静电吸附装置的电压为上述脉冲偏压的1/2以下。 30. A plasma processing method characterized by comprising the following processing steps procedure: The sample was placed in a vacuum processing chamber a pair of electrodes of one electrode; by electrostatic attraction to the specimen holder on the electrode; in ambient gas is placed and fixed the sample position in advance of the radicals occurrence gas into plasma, a desired amount of radicals supplied; the ion generator is supplied to the position of the gas in the surrounding gas; the surrounding pressure of the position of the sample reduced to the desired process pressure; under the above atmospheric pressure has been supplied to the ion generating plasma of gas; to process the sample, the pulse bias is applied to said sample, and with the plasma, electrostatic attraction means so that the voltage of the pulse bias is 1/2 or less.
31.一种等离子处理方法,其特征在于包括以下处理程序步骤:把试样放置在真空处理室内的一对对面电极中的一个电极上;利用静电吸附力把试样固定在上述电极上;在放置并固定上述试样的位置的周围气体中,预先对原子团发生用气体进行等离子化,供给所需数量的原子团;把离子发生用气体供给到上述位置的周围气体中;把上述位置的周围气体降低到0.5-4.0Pa;把30MHz-100MHz的高频电压加到上述一对对面电极之间,在上述气压下对已供给的离子发生用气体进行等离子化;利用上述等离子体来处理该试样;把脉冲偏压加到上述试样上。 31. A plasma processing method comprising the steps of processing procedure: The sample was placed on a pair of plane electrodes in vacuum processing chamber on one electrode; by electrostatic attraction at the specimen holder on the electrode; in ambient gas is placed and fixed the sample position in advance of the radicals occurrence to plasma, supplying gas for a desired amount of radicals; the ion generator is supplied to the position of the gas in the surrounding gas; the ambient gas of the position of reduced to 0.5-4.0Pa; the 30MHz-100MHz frequency voltage is applied between the pair of electrode surfaces, have been supplied to the ion occurred in the above gas pressure of the plasma gas; the process using the plasma sample ; the pulse bias is applied to said sample.
CN 97103106 1997-02-28 1997-02-28 Plasma processor and its treating method CN1164122A (en)

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US9370530B2 (en) 2010-01-11 2016-06-21 Inotek Pharmaceuticals Corporation Combination, kit and method of reducing intraocular pressure
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