CN1178263A - Apparatus and method for forming thin diamond-like films - Google Patents
Apparatus and method for forming thin diamond-like films Download PDFInfo
- Publication number
- CN1178263A CN1178263A CN 97117950 CN97117950A CN1178263A CN 1178263 A CN1178263 A CN 1178263A CN 97117950 CN97117950 CN 97117950 CN 97117950 A CN97117950 A CN 97117950A CN 1178263 A CN1178263 A CN 1178263A
- Authority
- CN
- China
- Prior art keywords
- base material
- voltage
- diamond
- carbon film
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The subject of the present invention obtains a diamond carbon thin film with a good jointing with a substrate, high hardness, good smoothness and a good quality, including the substrate base 4 to hold substrate 3 in the vacuum groove 1, a substrate temperature regulating mechanism 6 to regulate the temperature of the substrate 3, a gas ion source 10 opposite to the substrate 3, an offset method 5 for adding voltage to the substrate 3, a reaction gas leading chamber 11 which has an orifice arranged opposite to the substrate 3 on the gas ion source 10, a hot electron radiation method 12, a hot electron extraction electrode 13 and accelerating electrode 15. In addition, thin film of the present invention also includes the gas ion source 10 provided with the hot electron radiation method 12 and the accelerating electrode 15 which accelerates ion to the substrate 3, a first offsetting method 20 which adds voltage according to time function to the substrate 3 relative to the accelerating electrode 15 and a second offsetting method 21 which adds voltage to the hot electrode radiation method 12 according to the time function.
Description
The present invention relates to form the device and the formation method of diamond like carbon film.Be particularly related to the ionogenic diamond like carbon film of using gas and form device and formation method.
So far, people seek to utilize the hard plating film of diamond like carbon film (DLC:Diamond Like Carbon) as the surfaces such as storage media of protection metal pattern, instrument, sliding component, magneto-optical disc apparatus always in the past.
Figure 53 represents for example sectional view of the DLC film forming device of the use microwave plasma in the past of Japanese kokai publication sho 63-185893 communique proposition.In the drawings, the 1st, the vacuum tank of maintenance inner vacuum, the 101st, the substrate holder of maintenance base material 3 in vacuum tank 1,6 are arranged on the well heater that in the base material supporting apparatus base material is heated, 103, the 104th, be used in vacuum tank 1 importing the reactant gases introducing port of reactant gases, the 102nd, be used in vacuum tank 1, applying the wave guide of microwave, the 105th, in vacuum tank 1, produce the electro-magnet in magnetic field.
Then, action is described.
State before use in diamond-like-carbon (DLC) film forming device and formation method of plasma CVD in the past, for the thermal distortion that prevents base material and rotten and temperature occasion base material when reducing film and forming, the problem that has the bonding strength of membranous deterioration, film to reduce.In order to strengthen and the sticking power of base material and between base material and DLC film, form the occasion of the film of Si, Ti, Al etc. as the middle layer, must utilize other devices to form, at this moment, in a single day the middle layer that forms on base material is exposed to back formation DLC film in the atmosphere, just produces the problem that middle layer and DLC adhesion of thin film reduce.
In addition, because in device in the past, supply gas in the whole vacuum tank, and apply microwave, formation film there, so the utilising efficiency of supply gas etc. is poor.
In addition, owing to as the charged discharge that causes in the formation of the DLC film of insulant, make the coarse problem of film surface.
The present invention is used to solve foregoing problems, and its purpose is to obtain to form effectively DLC film forming device and the formation method with the high-quality DLC film that the base material tack is good, high rigidity, planarization is good.
The DLC film forming device relevant with claim 1 of the present invention comprises: the base material supporting apparatus that keeps base material in vacuum tank; Adjust the base material temperature adjustment mechanism of the temperature of aforementioned substrates; The gas ion source that in vacuum tank, is provided with respect to base material; Described gas ion source imports the chamber by the reactant gases that throttle orifice and importing gas are set towards base material, be arranged on described reactant gases and import indoor thermoelectronic emission means, draw thermionic thermoelectron extraction electrode from described thermoelectronic emission means, towards base material the accelerating electrode that ion quickens is formed, applied the biasing means of voltage for described accelerating electrode, on described base material.
The DLC film forming device relevant with claim 2 of the present invention, the biasing means can apply the voltage as the function of time for accelerating electrode, on base material.
The DLC film formation method relevant with claim 3 of the present invention behind the surface of clean base material, is controlled to 100 ℃ to 250 ℃ with the temperature of base material, and forms the DLC film.
The DLC film formation method relevant with claim 4 of the present invention when the formation of DLC film, utilizes the biasing means to apply negative voltage on base material.
The DLC film formation method relevant with claim 5 of the present invention when the formation of DLC film, utilizes the biasing means to apply positive and negative alternative voltage on base material.
The DLC film forming device relevant with claim 6 of the present invention forms diamond like carbon film on base material, described diamond like carbon film forms device and comprises: the vacuum tank that keeps the inner vacuum tightness that becomes to stipulate and put into described base material; Be provided with respect to described base material, take place by dissociative carbon and carbon ion with by dissociative hydrogen and hydrionic gas ion source; Described gas ion source is by towards described base material throttle orifice being set, and the reactant gases that imports gas imports the chamber, being arranged on described reactant gases imports indoor and radiates thermionic thermoelectronic emission means, draw thermionic thermoelectron extraction electrode from described thermoelectronic emission means, be arranged on the outside that described reactant gases imports the chamber and the accelerating electrode that described ion quickens is formed towards described base material, can be for described accelerating electrode in the 1st biasing means of the voltage of application time function on the described base material with can on described thermoelectronic emission means, apply the 2nd biasing means for described accelerating electrode as the voltage of the function of time.
The DLC film forming device relevant with claim 7 of the present invention utilizes the 2nd biasing means for the voltage that accelerating electrode applies on the thermoelectronic emission means, is direct current or time dependent positive voltage.
The DLC film forming device relevant with claim 8 of the present invention utilizes the 2nd biasing means for the voltage that accelerating electrode applies on the thermoelectronic emission means, is positive and negative alternative voltage.
Fig. 1 represents the sectional view of the DLC film forming device of the embodiment of the invention 1.
Fig. 2 represents to utilize in the embodiment of the invention 1 oscillogram of the voltage that the biasing means apply.
Fig. 3 is the film-forming temperature dependent Raman spectrogram of expression with the film of the DLC film forming device formation of the embodiment of the invention 1.
Fig. 4 represents the sectional view of the DLC film forming device of the embodiment of the invention 1.
Fig. 5 represents the sectional view of the DLC film forming device of the embodiment of the invention 2.
Fig. 6 represents the sectional view of the DLC film forming device of the embodiment of the invention 2.
Fig. 7 represents the sectional view of the DLC film forming device of the embodiment of the invention 3.
Fig. 8 represents the sectional view of the DLC film forming device of the embodiment of the invention 3.
Fig. 9 represents the sectional view of the DLC film forming device of the embodiment of the invention 4.
Figure 10 represents the sectional view of the DLC film forming device of the embodiment of the invention 4.
Figure 11 represents the sectional view of the DLC film forming device of the embodiment of the invention 5.
Figure 12 represents the sectional view of the DLC film forming device of the embodiment of the invention 5.
Figure 13 represents the sectional view of the DLC film forming device of the embodiment of the invention 6.
Figure 14 represents the sectional view of the DLC film forming device of the embodiment of the invention 7.
Figure 15 represents to utilize in the embodiment of the invention 8 oscillogram of the voltage that the biasing means apply.
Figure 16 represents to utilize in the embodiment of the invention 8 oscillogram of the voltage that the biasing means apply.
Figure 17 represents to utilize in the embodiment of the invention 9 oscillogram of the voltage that the biasing means apply.
Figure 18 represents to utilize in the embodiment of the invention 9 oscillogram of the voltage that the biasing means apply.
Figure 19 represents to utilize in the embodiment of the invention 10 oscillogram of the voltage that the biasing means apply.
Figure 20 represents to utilize in the embodiment of the invention 10 oscillogram of the voltage that the biasing means apply.
Figure 21 represents the sectional view of the DLC film forming device of the embodiment of the invention 11.
Figure 22 represents the oscillogram based on the voltage of the 1st, the 2nd biasing means of the embodiment of the invention 11.
Figure 23 represents the oscillogram based on the voltage of the 1st, the 2nd biasing means of the embodiment of the invention 11.
Figure 24 represents the oscillogram based on the voltage of the 1st, the 2nd biasing means of the embodiment of the invention 11.
Figure 25 represents the oscillogram based on the voltage of the 1st, the 2nd biasing means of the embodiment of the invention 11.
Figure 26 represents the Raman analysis result's of film Raman spectrogram.
Figure 27 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 12.
Figure 28 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 12.
Figure 29 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 13.
Figure 30 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 13.
Figure 31 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 14.
Figure 32 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 14.
Figure 33 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 14.
Figure 34 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 14.
Figure 35 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 15.
Figure 36 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 15.
Figure 37 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 15.
Figure 38 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 15.
Figure 39 represents the sectional view of the DLC film forming device of the embodiment of the invention 16.
Figure 40 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 17.
Figure 41 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 17.
Figure 42 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 18.
Figure 43 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 18.
Figure 44 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 18.
Figure 45 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 19.
Figure 46 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 19.
Figure 47 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 19.
Figure 48 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 19.
Figure 49 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 20.
Figure 50 represents the oscillogram based on the voltage of the 2nd biasing means of the embodiment of the invention 20.
Figure 51 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 20.
Figure 52 represents the oscillogram based on the voltage of the 1st biasing means of the embodiment of the invention 20.
Figure 53 represents the sectional view of DLC film forming device in the past.
Below, with reference to accompanying drawing embodiments of the invention are described.
Below, with reference to accompanying drawing embodiments of the invention 1 are described.Fig. 1 represents the sectional view of diamond-like-carbon (DLC) film forming device of the embodiment of the invention 1.In the drawings, the 1st, keep inside to become the vacuum tank of vacuum, the 2nd, carry out deflated exhaust system in the vacuum tank 1, the 3rd, form the base material of for example superhard alloy of DLC film from the teeth outwards, the 4th, in vacuum tank 1, make the evaporation face (film formation face) of base material 3 hold down the base material supporting apparatus of base material, the 5th, on base material 3, apply the biasing means of bias voltage via base material supporting apparatus 4 for accelerating electrode 15 described later, 6 are arranged on the base material supporting apparatus 4 base material 3 are heated, cool off and adjust the base material temperature adjustment mechanism of its temperature, the 7th, to carrying out the insulating ceramic of electric insulation between vacuum tank 1 and the base material supporting apparatus 4.
The 10th, in vacuum tank 1, face toward base material 3 and setting gas ion source thereunder, the 11st, the reactant gases that imports reactant gases to inside imports the chamber, the throttle orifice (not shown) that it is provided with towards base material 3, so that can radiate ion etc., and increase stream impedance, and between vacuum tank 1, provide differential pressure, 12 are arranged on reactant gases imports the thermoelectronic emission means that constitute with for example tungsten filament in the chamber 11, the 13rd, the reactant gases that is arranged on that constitutes with the fine wire of configured in parallel imports thermoelectron extraction electrode in the chamber 11, the 14th, import with reactant gases that chamber 11 links to each other and to the reactant gases ingress pipe of its inner importing reactant gases, 15 are arranged on reactant gases imports the outside of chamber 11 and the accelerating electrode that quickens towards 3 pairs of ions of base material, imports chamber 11 with reactant gases, thermoelectronic emission means 12, thermoelectron extraction electrode 13, reactant gases ingress pipe 14 and accelerating electrode 15 constitute gas ion source 10.
In addition, with an end, vacuum tank 1, accelerating electrode 15 ground connection of biasing means 5.
Below its effect is described.At first, base material 3 is installed on base material supporting apparatus 4, utilize exhaust system 2 with vacuum tank in exhaust become 1 * 10
-6After the vacuum tightness about Torr, utilize base material temperature adjustment mechanism 6 that the temperature of base material 3 is adjusted to about 300 ℃.Then,, will be suitable for gas, for example argon gas of ion cleaning, and import to reactant gases from reactant gases ingress pipe 14 and import the chamber 11, and the vacuum tightnesss that reactant gases is imported in the chamber 11 reach 1 * 10 for the clean on the surface of base material 3
-2～1 * 10
-1Torr.
Then, make thermoelectronic emission means 12 action, utilizing does not have illustrated power supply for thermoelectronic emission means 12 bias voltage about+50～800V to be applied on the thermoelectron extraction electrode 13.
In order to draw ion,, utilize the voltage about not having illustrated power supply with+200～500V to be applied on the thermoelectronic emission means 12 for accelerating electrode 15, promptly for earthing potential from gas ion source 10.Quicken towards thermoelectron extraction electrode 13 from the electronics of thermoelectronic emission means 12 radiation, make ion cleaning carry out ionization with gas, and towards base material 3 these ions of irradiation.Because of gas is ionized into positive ion, thus at this moment by means of utilize biasing means 5, with base material 3 for earthing potential with-1～-adjust biasing about 3kV, can control ionic weight and energy that base material 3 is shone, and can carry out clean effectively.
Utilize aforesaid processing, can remove the impurity of the moisture, lubricant component, oxide on surface etc. on base material 3 surfaces, improve the connecting airtight property of base material 3 and DLC film.
Then, stop to supply with the ion cleaning gases, and the clean on end base material 3 surfaces, utilize base material temperature regulating mechanism 6 by reason described later, the temperature of base material 3 is adjusted to 100 ℃～250 ℃ simultaneously to gas ion source 10.Here be to accomplish 200 ℃.Then, utilize biasing means 5 to be added in the function V (t) of the current potential of base material 3 for earthing potential for time t.Fig. 2 has provided the example of supplying with the bias voltage waveform of base material 3.Fig. 2 (a)～Fig. 2 (c) is depicted as the occasion of the negative voltage that applies direct current, half-wave rectification or full-wave rectification.
Magnitude of voltage is in several kV, is here-1kV.Frequency is about tens Hz～tens kHz in (b), is 60Hz and 1kHz here.By means of the magnitude of voltage of this V of control (t), can adjust and supply with energy of ions.Thus, can control the adhesion strength and the hardness of film.
Then, the gas of the nytron system of carbon elements (C) is imported to reactant gases from reactant gases ingress pipe 14 import the chamber 11, the vacuum tightnesss that reactant gases is imported in the chamber 11 reach 1 * 10
-2～1 * 10
-1Torr.
At this moment use for example benzene gas as the reactant gases that imports, then, make 12 actions of thermoelectronic emission means, the bias voltage about+50～800V is applied on the thermoelectron extraction electrode 13 for thermoelectronic emission means 12.On thermoelectronic emission means 12, for earthing potential, apply+voltage about 200～500V.Towards thermoelectron extraction electrode 13, quicken from the electronics of thermoelectronic emission means 12 radiation, and the irradiation that utilizes discharge or electronics excites, dissociates and the gas of the aforementioned nytron system of ionization, and to base material 3 irradiation by dissociative carbon with carbon ion with by dissociative hydrogen and hydrogen ion, and on base material 3 formation DLC film.Because of ion is a positive charge, so utilizing accelerating electrode 15 when gas ion source 10 quickens to draw, the negative bias voltage of control base material 3 can be adjusted and supply with energy of ions.
Fig. 3 represents with the temperature of the base material Raman analysis result as the DLC film of the occasion of parameter.When base material 3 temperature are 250 ℃, the typical spectrum of expression DLC, and in base material 3 temperature are 300 ℃～400 ℃ occasion, become the spectrum of graphite.Therefore, the temperature of base material 3 should be below 250 ℃, but then because other reason temperature is crossed low badly, that is to say, one be lower than 100 ℃, just die down for the DLC adhesion of thin film of base material 3.Therefore, use base material temperature regulating mechanism 6, the temperature of the base material in the film forming 3 is controlled to 100 ℃～250 ℃, by means of this way, can suppress the greying of DLC film, and can form high rigidity, high-quality DLC film.
In addition, the aforementioned temperature scope is not both because the different cause of type of device with the temperature range of device in the past shown in Figure 53.
In addition, as shown in Figure 4, rotating mechanism 100 is set on base material supporting apparatus 4, by means of in film forming, making base material 3 rotations, can obtain the homogeneity of film thickness distribution, can improve simultaneously tracing property, that is to say, can reduce the membrane thickness unevenness that causes by the direction of face and position for the end of base material 3 etc.
Fig. 5 represents the sectional view of the DLC film forming device of the embodiment of the invention 2.In the drawings, 10a is the 1st gas ion source, and 10b is the 2nd gas ion source, and is all identical with gas ion source 10 structures illustrated in fig. 1.Other parts are because of identical with the occasion of Fig. 1, so omit explanation.
Then, action is described.Identical with the occasion of Fig. 1, utilize exhaust system 2, exhaust becomes 1 * 10 in vacuum tank 1
-6After the vacuum tightness about Torr, utilize base material temperature adjustment mechanism 6 that the temperature of base material 3 is adjusted to about 300 ℃.Then, make gas ion source 10a work, implement the clean on base material 3 surfaces.Then, utilize the 1st gas ion source 10a, and utilize the gas of discharge or electron irradiation nytron system, excite, dissociate and ionization, and to base material 3 irradiation by dissociative carbon with carbon ion with by dissociative hydrogen and hydrogen ion, formation DLC film on base material 3.
In the formation of this DLC film, make the 2nd gas ion source 10b work, utilize discharge or electron irradiation to contain gas, for example methane gas of protium, excite, dissociate and ionization, by means of shining by dissociative hydrogen and hydrogen ion, the greying that can suppress the DLC film obtains DLC film high rigidity, high-quality.
Here, this irradiation has that to suppress graphited effect be because by dissociative hydrogen and hydrogen ion etching graphite and with the cause of its removing selectively on base material 3.
In addition, as shown in Figure 6, on the base material supporting apparatus, be provided with and execute rotation mechanism 100,, obtain the homogeneity of film thickness distribution, can improve tracing property simultaneously for the end of base material 3 etc. by means of in film forming, making base material 3 rotations.
Fig. 7 represents the sectional view of the DLC film forming device of the embodiment of the invention 3.In the drawings, the 30th, the source takes place in the metallic vapor of the electron beam evaporation source that can form metallic film or ceramic membrane, apparatus for ionically plating or the metal ion source etc. that are provided with facing to base material 3 in vacuum tank 1, uses metal ion source here.The 31st, put into the crucible of raw metal, the 32nd, the well heater of heating crucible 31, the 33rd, radiate thermionic thermoelectronic emission means, the 34th, draw thermionic thermoelectron from thermoelectronic emission means 33 and draw means, the 35th, it is carried out heat insulation thermoshield, the 36th, from metallic vapor source 30 taking place draws the ionic accelerating electrode, source 30 takes place by crucible 31 in metallic vapor, well heater 32, thermoelectronic emission means 33, thermoelectron is drawn means 34, and thermoshield 35 and accelerating electrode 36 constitute.
Because of other part is identical with the occasion of Fig. 1, so omit explanation.
Then, action is described.Identical with the occasion of Fig. 1, utilize exhaust system 2, exhaust becomes 1 * 10 in vacuum tank 1
-6After the vacuum tightness about Torr, utilize base material temperature adjustment mechanism 6 that the temperature of base material 3 is adjusted to about 300 ℃.Then, identical with the occasion of Fig. 1, carry out the clean on base material 3 surfaces, remove the moisture, lubricant component, oxide on surface on base material 3 surfaces etc.
Then, stop to supply with ion cleaning gas to gas ion source 10, and the clean on end base material 3 surfaces, utilize simultaneously biasing means 5 for earthing potential applying-0.5 on the base material 3～-voltage about 3kV, utilize the Si in 32 pairs of crucibles of well heater 31, Al, Ti, the metal of W etc. heats and steam takes place, utilizing thermoelectron to draw means 34 simultaneously will draw and quicken from the thermoelectron of thermoelectronic emission means 33 radiation, metal ion takes place, and it is radiated on the base material 3, form Si as the middle layer on its surface, Al, Ti, the metallic film of W etc.
In addition, here use the gas of 10 pairs of nytron systems of gas ion source, excite, dissociate and ionization, and to base material 3 irradiation by dissociative carbon and carbon ion, simultaneously, the gas atmosphere that will vacuum tank constitutes the nytron system in 1 also can be as previously mentioned, by means of making metallic vapor that source 30 work take place, and forms SiC, Al as the middle layer on the surface of base material 3
4C
3, TiC, WC etc. ceramic membrane.
Then, identical with the occasion of Fig. 1, make gas ion source 10 work, on the middle layer on the surface of base material 3, form the DLC film.
As previously shown, source 30 and gas ion source 10 take place because of metallic vapor is set in same vacuum tank 1, so after forming the middle layer on the surface of base material 3, can under no atmosphere opening situation, form the DLC film continuously, by means of on base material 3 surfaces, forming the middle layer, can improve the connecting airtight property of base material 3 and DLC film simultaneously.
In addition, as shown in Figure 8, rotating mechanism 100 is set on base material supporting apparatus 4,, obtains the homogeneity of film thickness distribution, can improve tracing property simultaneously for the end of base material 3 etc. by means of in film forming, making base material 3 rotation.
Fig. 9 represents the sectional view of the DLC film forming device of the embodiment of the invention 4.In vacuum tank 1 and in its underpart, base material supporting apparatus 4 is set, base material 3 is housed on base material supporting apparatus 4, with its evaporation towards last.On the top of vacuum tank 1 gas ion source 10 is set, so that shine ion downwards towards base material 3.So other because of with the identical omission of the occasion explanation of Fig. 1 or Fig. 4.
For action, though identical with the occasion of Fig. 1 or Fig. 4, in the present embodiment, because of bottom in vacuum tank 1 is provided with base material supporting apparatus 4, and keep base material 3 thereon, so even be large-scale or the occasion of weight at base material 3, also install easily, improved operability.
In addition, Figure 10 is provided with the 1st and the 2 two gas ion source 10a, 10b, its action is identical with the occasion of Fig. 5 or Fig. 6, this occasion is also upwards installed base material 3 on the base material supporting apparatus 4 of bottom in vacuum tank 1, simultaneously because of being provided with the 1st and the 2 two gas ion source 10a, 10b at vacuum tank 1 internal upper part, so that towards base material 3, downward or oblique down irradiation ion, so even base material 3 is large-scale or weight, also install easily, improved operability.
In addition, the 1st, the 2 two gas ion source 10a, 10b also can carry out the action suitable with the gas ion source 10 of Fig. 1 or Fig. 4.
Figure 11 represents the sectional view of the DLC film forming device of the embodiment of the invention 5.A side is provided with base material supporting apparatus 4 in vacuum tank 1, and base material 3 is housed on base material supporting apparatus 4, and its evaporation face is made towards the side.In vacuum tank 1, at opposite side gas ion source 10 is set, so that laterally shine ion towards base material 3 facing to base material 3.So other because of with the identical omission of the occasion explanation of Fig. 1 or Fig. 4.
For action, though identical with the occasion of Fig. 1 or Fig. 4, in the present embodiment, laterally keep base material 3 because of utilizing base material supporting apparatus 4, so, also install easily, improved operability even be large-scale or the occasion of weight at base material 3.
In addition, Figure 12 is provided with the 1st and the 2 two gas ion source 10a, 10b, its action is identical with the occasion of Fig. 5 or Fig. 6, this occasion is also laterally installed base material 3 on base material supporting apparatus 4, simultaneously because of the 1st and the 2nd gas ion source 10a, 10b, towards base material 3, horizontal or oblique laterally irradiation ion, so even base material 3 is large-scale or weight, also install easily, improved operation efficiency.
In addition, the 1st, the 2 two gas ion source 10a, 10b also can carry out the action suitable with the gas ion source 10 of Fig. 1 or Fig. 4.
Figure 13 represents the sectional view of the DLC film forming device of the embodiment of the invention 6.In vacuum tank 1, base material supporting apparatus 4 is set, base material 3 is installed on base material supporting apparatus 4 in its underpart.In the present embodiment, be illustrated in the occasion that forms the DLC film on the top and side of base material 3.The 1st gas ion source 10a is set, the 2nd gas ion source 10b, the 3rd gas ion source 10c, the 4th gas ion source 10d in vacuum tank 1.Wherein, top in vacuum tank 1 is provided with the 1st, the 2nd gas ion source 10a, 10b, so as above base material 3, downward or oblique down irradiation ion, on the other hand, side in vacuum tank 1 is provided with the 3rd, the 4 two gas ion source 10c, 10d, so as towards the side of base material 3, horizontal or oblique laterally irradiation ion.So other because of with the identical omission of the occasion explanation of Fig. 1 or Fig. 4.
For action, though identical with the occasion of Fig. 1 or Fig. 4, in the present embodiment, because of towards base material 3 from multi-direction irradiation ion, so even base material 3 for complicated shape also can be well formation DLC film with following the tracks of.
By means of make base material 3 rotation with rotating mechanism 100, can realize the homogenizing of thickness etc. of the side etc. of base material 3.
In addition, can be the occasion of small-sized or light weight also at base material 3, base material supporting apparatus 4 is configured in the top of vacuum tank 1 and down keeps base material 3, the the 1st, the 2nd gas ion source 10a, 10b are configured in the bottom of vacuum tank 1, towards base material 3, upwards or the oblique ion of irradiation up, utilize the 3rd, the 4th gas ion source 10c, 10d simultaneously, towards base material 3, horizontal or oblique laterally irradiation ion.
In addition, the 1st gas ion source 10a and the 3rd gas ion source 10c also can be equivalent to the action of the 1st gas ion source 10a of Figure 10, and, the 2nd gas ion source 10b and the 4th gas ion source 10d also can be equivalent to the action of the 2nd gas ion source 10b of Figure 10.
Figure 14 is the sectional view of the DLC film forming device of the expression embodiment of the invention 7.The 5th gas ion source 10e is set substitutes the 2nd gas ion source 10b among Figure 10.The 5th gas ion source 10e is the ion source that can form metallic films such as Si, Ti as the middle layer, W, Al, B or SiC, Al4C3, ceramic membranes such as TiC, WC on base material 3 surfaces.Other are identical with Figure 10 occasion, the Therefore, omited explanation.
Next explanation action.At first make the 1st gas ion source 10a work, identical with Figure 10 occasion clean is carried out on base material 3 surfaces.
Then, by biasing means 5 with respect to earthing potential give base material 3 add-0.5～-0.3kV size current potential.Next, make the 5th φ gas ion source 10e work, make the gas of metallic elements such as containing Si, Ti, W, Al, B by discharge or electron irradiation, for example disassociations such as SiH4, TiCl4, WF6, AlCl3, and ionization, such dissociative metal and metal ion are exposed on the base material 3, form Si, Al, metallic films such as Ti, W in its surface as the middle layer.
Here, perhaps the limit to base material 3 irradiation by the 1st gas ion source 10a makes that nytron system gas excites, disassociation and ionization dissociate out like this carbon atom and carbon ion, make and be nytron system gas atmosphere in the vacuum tank, the limit is worked the 5th gas ion source 10e as mentioned above, thereby it is good as the middle layer to form ceramic membranes such as SiC, Al4C3, TiC, WC on base material 3 surfaces.
Then, carbon atom and carbon ion and hydrogen atom and hydrogen ion to base material 3 irradiations are dissociated out by the 1st gas ion source 10a form the DLC film.
Though use continuously mutually so that the forming of the middle layer that DLC film tack improves by above can be under no atmosphere opening situation formation with the DLC film, but in this middle layer forming process, owing to supply with component with gaseous state, thereby with provide the deposition material occasion to compare with solid and liquid mode, the 5th restriction of gas ion source 10e aspect configuration is less, that is to say that degree of freedom is bigger.
In addition, among the embodiment 1～7, by graphite is imported the constituent material of chamber 11 as gas ion source accelerating electrode 15 and reactant gases, even if being attached to reactant gases, the product carbon that responds imports chamber 11 inwalls and accelerating electrode 15, still can suppress the generation of the dust that is difficult to peel off.
Embodiment 8
The voltage V (t) that provides to base material 3 shown in Figure 2, but also can be with the voltage waveform alternate figures 2 shown in following.Magnitude of voltage, frequency are with illustrated in fig. 2 identical, no matter voltage is positive and negative all in number kV.Waveform shown in Fig. 2 and Figure 15～20 also can both be applied to any device of explanation among the embodiment 1～7.
V (t) waveform that Figure 15 shows that present embodiment is given an example.(a) expression is sinusoidal wave, and (b)～(d) represents the offset waveform of sine wave to the negative direction skew.The alternating voltage of (a) and (b) is positive and negative, and (c), (d) be the negative voltage that changes of t in time.
During V (t) negative value, provide energy to ion, V (t) on the occasion of during then draw electronics, on the film of base material 3 with the counter-measure that goes up electric charge, specifically, provide electronics to base material 3, in and the electric charge on the isolator DLC film.Electric charge is accumulated on the film, just discharges, and it is coarse that film surface becomes, and planeness reduces.
(c), (d) do not have voltage on the occasion of during, but electronics has the energy that is in the gas ion source 10, in (c), (d) negative value less during, by the stack of this magnitude of voltage and above-mentioned energy, can provide electronics to base material 3.
Figure 16 represents to replace with square wave the occasion of Figure 15 sine wave.Figure 16 (a)～(d) is equivalent to Figure 15 (a)～(d) respectively, has the effect identical with these.In addition, waveform is that choppy sea etc. is good.
Embodiment 9
V (t) waveform that Figure 17 shows that the embodiment of the invention is given an example.Positive half-wave and negative half-wave are sinusoidal wave half-wave shape, but during the negative value with on the occasion of during the length of comparing.Thereby, mainly be to provide energy to ion, simultaneously short on the occasion of during also have to base material 3 and provide electronics to solve the effect of Issues on Static Electrification.
Figure 18 illustrates the occasion that replaces Figure 17 sine wave with square wave.Figure 18 (a)～(d) is equivalent to Figure 17 (a)～(d) respectively, has the effect identical with these.In addition, waveform is that choppy sea etc. is good.
V (t) waveform that Figure 19 shows that present embodiment is given an example.Positive half-wave and negative half-wave are sinusoidal wave half-wave shape, but opposite with the situation of Figure 17, on the occasion of during with negative value during the length of comparing.Thereby, mainly be to provide electronics to base material 3, also can provide energy simultaneously to ion.Therefore can fully solve Issues on Static Electrification.
Figure 20 shows that the occasion that replaces Figure 19 sine wave with square wave.Figure 20 (a)～(d) is equivalent to Figure 19 (a)～(d) respectively, has the effect identical with these.In addition, waveform is that choppy sea etc. is good.
In addition, more than explanation is that the DLC film is added in the voltage waveform on the base material 3 when forming, but base material 3 is the occasion of isolator, electrification phenomenon also takes place during clean, thereby by on substrate holder 4, adding for example Figure 18 (d) voltage waveform, can provide electronics to base material 3 surfaces, have effect as charged counter-measure.
Figure 21 is the sectional view of the expression embodiment of the invention 11 diamond-like-carbon (DLC) film forming device.Among the figure, the 1st, the inner vacuum tank that keeps vacuum, the 2nd, to carrying out the deflated exhaust system in the vacuum tank 1, the 3rd, its surface is formed with the DLC film, for example is to be remained on this base material of superhard alloy in the vacuum tank 1 by not shown pedestal.10 for to be oppositely arranged with base material 3, produces dissociative carbon atom and carbon ion and dissociative hydrogen atom and hydrionic gas ion source.11 for importing the reactant gases importing chamber of the nytron system reactant gases that contains DLC film starting material carbon atoms (C) to inside, be provided with throttle orifice (not shown) with base material 3 relative positions 16, so that can radiate ion etc., and increase the stream impedance, and keep pressure reduction between the vacuum tank 1.
12 for being constituted, be arranged on the thermoelectronic emission means in the reactant gases importing chamber 11 by tungsten filament or tantalum wire etc.13 import thermoelectron extraction electrode in the chamber 11 for constituted, be arranged on reactant gases by the fine wire of configured in parallel.14 for reactant gases import chamber 11 link to each other connection, reactant gases is imported its inner reactant gases ingress pipe.15 accelerating electrodes that import 11 outsides, chamber, ion is quickened to base material 3 for being arranged on reactant gases.Thereby import chamber 11, thermoelectron radiation means 12, thermoelectron extraction electrode 13, reactant gases ingress pipe 14 and accelerating electrode 15 by reactant gases and constitute ion source 10.
20 is can be with respect to accelerating electrode 15 by time function alive the 1st biasing means on base material 3.21 is can be with respect to accelerating electrode 15 by alive the 2nd biasing means on the time function thermotropism electron radiation means 12.22 is to make the current potential of thermoelectron extraction electrode 13 be forward biased direct supply with respect to thermoelectron radiation means 12.23 for making the AC power of thermoelectron radiation means 12 work usefulness.
One end ground connection of accelerating electrode 15 and the 1st, the 2nd biasing means 20,21.
Below explanation action.At first, will be vented to 1 * 10 in the vacuum tank 1 by exhaust system 2
-6After the vacuum tightness of Torr size, by not shown base material temperature adjustment mechanism base material temperature is adjusted to 100 ℃～250 ℃, reactive gas nytron system gas is directed into reactant gases from reactant gases ingress pipe 14 to import in the chamber 11, make gas spray to thermoelectron extraction electrode 13 and thermoelectron radiation means 12, the vacuum tightness that reactant gases is imported in the chamber 11 is adjusted into 1 * 10
-2～1 * 10
-1Torr.
Next,, be heated to about 2000 ℃, can provide the thermoelectron state thereby be in by 12 power supplies of AC power 23 thermotropism electron radiation means.Then, add the voltage of 50～800V size by direct supply 22, the current potential that makes thermoelectron extraction electrode 13 is forward bias with respect to thermoelectron radiation means 12, the electronics that makes 1～3A size by thermoelectron radiation means 12 to thermoelectron extraction electrode 13 by figure in direction irradiation shown in the arrow.Reactant gases imports nytron system gases in the chamber 11 by this electron irradiation and with the contact of heated thermoelectron radiation means 12 etc., is excited, disassociation and ionization.
At this moment, on base material 3 and thermoelectron radiation means 12, be biased voltage.Figure 22～shown in Figure 25 is a benchmark for the current potential with accelerating electrode 15, is added in the voltage V1 (t) on the base material 3 and is added in the several examples of the voltage V2 (t) on the thermoelectron radiation means 12 by the 2nd biasing means by the 1st biasing means 20.All in ± several kV, frequency setting is tens Hz～tens kHz for V1 (t), V2 (t) voltage.
V2 (t) timing can import chamber 11 from reactant gases and take out ion (positive charge), otherwise, can take out electronics when negative.Thereby.By the size of controlling positive negative bias voltage, the time scale that generating positive and negative voltage is provided, can control efficiently with film and form relevant carbon ion, hydrionic kinetic energy and ionic weight, or control efficiently is used for and base material 3 on institute charged electronic kinetic energy and amount of electrons.
Electrification phenomenon is described here.DLC is an isolator, thereby has the positive charge phenomenon because of ion produces during film forming.Electric charge makes film surface coarse once the accumulation discharge.In order to suppress this situation, just provide electronics charged certainly to neutralize, improve the film planeness.
Then, can control the ion of drawing from gas ion source 10, electron impact kinetic energy and quantity efficiently by V1 (t) to base material 3.Specifically, when V1 (t) bears, can give ion energy to be incident on the base material 3, otherwise timing then can offer electron energy, thereby, just can control the kinetic energy of carbon ion, hydrogen ion, electronics and their quantity by the size of controlling positive negative bias voltage, the time scale that generating positive and negative voltage is provided.
In addition, obtain between V1 (t) and V2 (t) synchronously, overall control (V1 (t)-V2 (t)) just can be controlled the kinetic energy of carbon ion, hydrogen ion, electronics and their quantity.
What Figure 22 occasion was represented is to obtain between V1 (t) and V2 (t) synchronously, draws a large amount of ions from gas ion source 10, is controlled to be the occasion of the energy level that is fit to film formation simultaneously when being incident to base material 3.
At first, taking out a large amount of ions in the chamber 11 in order to import from the reactant gases that excites ionized state, is the bigger bias voltage of forward by make V2 (t) shown in Figure 22 (b), can be directly proportional with this bias voltage and draw a large amount of ions.Simultaneously,, make ion retardation, be as general as (V1 (t)-V2 (t)), shown in Figure 22 (c), will be controlled to be suitable energy level, be incident to base material 3 from the ion kinetic energy that gas ion source 10 is drawn by shown in Figure 22 (a), making V1 (t) forward bias.In addition, V2 (t) just draws electronics from gas ion source 10 for during negative, is incident to base material 3 by (V1 (t)-V2 (t)).
The sticking power that shown in Figure 23 is for enhanced film and substrate 3, as by to formation mixolimnion occasions such as base material 3 injections, carry out the ion sputtering occasion etc., ion kinetic energy is set at the situation of big energy level.Draw a large amount of ions in order to import chamber 11, shown in Figure 23 (b), make V2 (t) be the big bias voltage of forward from reactant gases.Simultaneously, be the negative sense bias voltage by shown in Figure 23 (a), making V1 (t), further give ion energy, generally shown in (V1 (t)-V2 (t)) among Figure 23 (c), give ion bigger kinetic energy, be controlled to be the energy level that can carry out ion sputtering, be incident to base material 3.
Figure 24 makes V1 (t), V2 (t) be the alternating current transformation, but makes both synchronous, is identical size, is zero in general.At this moment, V2 (t) is alternately positive and negative, takes out ion and electronics from gas ion source 10 respectively, slows down by V1 (t), and the kinetic energy that is had in reactant gases imports chamber 11 by ion and electronics is incident to base material 3.
Figure 25 and Figure 24 occasion are similar, but are the occasion that (V1 (t)-V2 (t)) is set at certain negative voltage, can provide energy to ion.
In addition, shown in Figure 22～Figure 25 is square wave and sine wave, but other waveforms such as choppy sea are good.
Shown in Figure 26 is Raman's analytical results of the DLC film that obtains as mentioned above.Can be observed 1550cm by figure
-1Near have main peak, 1400cm
-1Near have asymmetric Raman's zone of shoulder zone, shown is the typical spectrum of DLC, can know that formed is high-quality DLC film.In addition, in order to provide the spectrum of graphite film more in the lump.
In addition, with regard to the pre-treatment that forms the DLC film, it is good that clean is carried out on base material 3 surfaces.At this moment,, for example argon gas this gas that ion cleaning is handled with being fit to imports reactant gases from reactant gases pipe 14 and imports chamber 11, makes reactant gases import the vacuum tightness of chamber 11 from 1 * 10
-2Become 1 * 10
-1Torr.And, by making 12 work of thermoelectron radiation means, to thermoelectron extraction electrode 13 irradiation electronics, above-mentioned gas is carried out ionization, by the 2nd biasing means 21, in the reactant gases importing chamber 11 that excites ionized state, take out ion efficiently, by kinetic energy, the quantity of this ion incidence of the 1st biasing means 20 controls to base material 3.At this moment, by the total voltage (V1 (t)-V2 (t)) that makes the 1st, the 2nd biasing means 20,21 be-0.5～-the 3kV size, can carry out clean effectively.
By above clean, can remove the impurity such as moisture, lubricant component, oxide on surface on base material 3 surfaces, thereby improve the connecting airtight property of base material 3 and DLC film.
Shown in Figure 27 for being added in V1 (t) voltage waveform on the base material 3 by the 1st biasing means 20 during the DLC film forming among the embodiment 12.Omit the parts identical such as explanation device formation with Figure 21 occasion.V1 (t) is a direct current or through the negative voltage of half-wave rectification or full-wave rectification, is that ion energy can be provided, and connecting airtight property is good to obtain, the voltage of the DLC film of high rigidity.At this moment, V2 (t) is set at for example arbitrary voltage shown in Figure 28 (a)～(c) as the voltage that takes out ion or electronics from gas ion source 10.
In addition, when V1 (t), V2 (t) all were not direct current but time dependent voltage, preferably both were synchronous.
Shown in Figure 29ly be added in V1 (t) voltage waveform on the base material 3 by the 1st biasing means 20 when the DLC film forming.Omit explanation device and Figure 21 occasion same section.Wherein figure (a) expression is sinusoidal wave, and (b)～(d) expression is with the offset waveform of sinusoidal wave negative sense direction skew.Alternating voltage is positive and negative in the (a) and (b), (c), (d) be the negative voltage that changes of t in time.During the voltage negative value, provide energy to the ion that takes out from gas ion source 10, voltage on the occasion of during then provide energy to electronics.
Shown in Figure 30 is the occasion that substitutes Figure 29 sine wave with square wave, has same effect with Figure 29 occasion.
In addition, under these occasions, V2 (t) can be for example Figure 28 (b) or (c) this voltage as the voltage that takes out ion or electronics from gas ion source 10.
V1 (t) voltage waveform when being the DLC film forming shown in Figure 31.Omit explanation device and Figure 21 occasion same section.V1 (t) positive half-wave and negative half-wave are sinusoidal wave half-wave shape, but the negative value cycle and the length of comparing on the occasion of the cycle.Thereby, mainly be to provide energy, and also have effect as charged counter-measure to ion.
Shown in Figure 32 is the occasion that replaces Figure 31 sine wave with square wave, has and Figure 31 occasion same effect.
In addition, Figure 31 (a) and (b) and Figure 32 (a) and (b) occasion, V2 (t) is as the voltage that takes out ion or electronics from gas ion source 10, can use for example arbitrary voltage shown in Figure 28 (b), (c) or Figure 33 (a) and (b), and Figure 31 (c), (d) and Figure 32 (c), (d) occasion, V2 (t) then can use Figure 34 (a) or (b) shown in voltage.
V1 (t) voltage waveform when being the DLC film forming shown in Figure 35.Omit explanation and Figure 21 occasion same section.The positive half-wave of V1 (t) and negative half-wave are sinusoidal wave half-wave shape, but opposite with Figure 31, on the occasion of during with negative value during the length of comparing.Thereby, mainly be to provide electronics to base material 3, so can fully solve Issues on Static Electrification, and can also provide energy to ion.
Shown in Figure 36 is to replace the occasion of Figure 35 sine wave with square wave, and has the effect identical with Figure 35 occasion.
In addition, Figure 35 (a) and (b) and Figure 36 (a) and (b) occasion, V2 (t) is as the voltage that takes out ion or electronics from gas ion source 10, can use for example arbitrary voltage shown in Figure 37 (a)～(d), and Figure 35 (c), (d) and Figure 36 (c), (d) occasion, V2 (t) then can use Figure 38 (a) or (b) shown in voltage.
In addition, Figure 27～shown in Figure 38 is sine wave or square wave shape waveform, but other waveforms such as choppy sea are good.
Figure 39 is the sectional view of the DLC film forming device of expression embodiment 16.Compare with Figure 21, the 1st biasing means (20) are not set, base material 3 its current potentials and accelerating electrode 15 are in same potential.Identical as for other with Figure 21 occasion, the Therefore, omited explanation.
In the present embodiment, when the DLC film forms, be incident to the ion of base material 3 and electron energy only by 21 controls of the 2nd biasing means, thereby operation becomes simple, device is simplified.
Embodiment 17
Shown in Figure 40ly be added to V2 (t) voltage waveform on the thermoelectron radiation means 12 by the 2nd biasing means 21 when the DLC film forming.Omit explanation and Figure 21 occasion same section.V2 (t) is a direct current or through the positive voltage of half-wave rectification or full-wave rectification, can draw ion efficiently from gas ion source, and can provide energy to ion.
In addition, these occasions, V1 (t) adopts for example central arbitrary waveform voltage of Figure 41 (a)～(c) as the voltage that energy is provided to ion.
Embodiment 18
V2 (t) voltage waveform when being the DLC film forming shown in Figure 42.Omit explanation and Figure 21 occasion same section.Wherein figure (a) expression is sinusoidal wave, and (b)～(d) expression is with the offset waveform of sine wave to the positive dirction skew.Alternating voltage is positive and negative in the (a) and (b), (c), (d) be the positive voltage that changes of t in time.Voltage on the occasion of during take out ions from gas ion source 10, during the voltage negative value, then take out electronics.
Shown in Figure 43 is the occasion that substitutes Figure 42 sine wave with square wave, has the effect identical with Figure 42 occasion.
In addition, these occasions, V1 (t) is as the voltage that energy is provided to ion, adopt Figure 44 (a) for example or (b) shown in voltage waveform.
Embodiment 19
V2 (t) voltage waveform when being the DLC film forming shown in Figure 45.Omit explanation and Figure 21 occasion same section.The positive half-wave of V2 (t) and negative half-wave are sinusoidal wave half-wave shape, but on the occasion of during with negative value during the length of comparing.Thereby, mainly be to provide energy, and in the middle of gas ion source, take out to ion, electronics also is provided simultaneously.
Shown in Figure 46 is to substitute the occasion of Figure 45 sine wave with square wave, and has the effect identical with Figure 45 occasion.
In addition, Figure 45 (a) and (b) and Figure 46 (a) and (b) occasion, V1 (t) is as the voltage that energy is provided to ion or electronics, can use for example arbitrary voltage shown in Figure 41 (b), (c) or Figure 47 (a) and (b), and Figure 45 (c), (d) and Figure 46 (c), (d) occasion, V1 (t) then can use Figure 48 (a) or (b) shown in voltage.
V2 (t) voltage waveform when being the DLC film forming shown in Figure 49.Omit explanation and Figure 21 occasion same section.The positive half-wave of V2 (t) and negative half-wave are sinusoidal wave half-wave shape, but opposite with Figure 45, during the negative value with on the occasion of during the length of comparing.Thereby, mainly be to provide electronics by gas ion source 10, with abundant solution Issues on Static Electrification, can also provide ion certainly.
Shown in Figure 50 is to replace the occasion of Figure 49 sine wave with square wave, and has the effect identical with Figure 49 occasion.
In addition, Figure 49 (a) and (b) and Figure 50 (a) and (b) occasion, V1 (t) is as the voltage that energy is provided to ion or electronics, can be with the arbitrary voltage shown in Figure 44 (a) and (b) for example or Figure 51 (a) and (b), and Figure 49 (c), (d) and Figure 50 (c), (d) occasion, V1 (t) then can be with for example Figure 52 (a) or the voltage (b).
In addition, shown in Figure 40～Figure 51 is sine wave or square wave shape waveform, but other waveforms such as choppy sea are good.
DLC film forming device of the present invention has the gas ion source that the reactant gases that throttle orifice is set and imports gas towards base material imports the chamber in vacuum tank, thereby raises the efficiency at aspects such as gas usage.
And the biasing means are by by time function making alive on base material, can adjust the quantity that offers energy of ions and suppress charged electronics, thereby obtain high quality DLC film.
DLC film formation method of the present invention, with above-mentioned DLC film forming device, after base material carried out clean, making base material temperature is to form film from 100 ℃ to 250 ℃, thereby can in same vacuum tank, carry out clean and film forming, thereby can form the DLC film of the big and high rigidity of sticking power efficiently.
In addition, when forming, the DLC film, can provide energy to ion by on base material, adding negative voltage, thus big, the high rigidity DLC film of acquisition sticking power.
In addition,, can offer ion energy, simultaneously provide electronics, thereby can obtain that sticking power is big, high rigidity and the good DLC film of planarization to base material by on base material, adding positive and negative alternative voltage.
In addition, DLC film forming device of the present invention, comprise with respect to accelerating electrode alive the 1st biasing means on base material, with alive the 2nd biasing means on thermoelectron radiation means, constituting can be respectively by time function making alive, by controlling the voltage of these the 1st, the 2nd biasing means, provide energy to ion, perhaps provide electronics to base material as charged counter-measure, and can control their size, thereby have can form that connecting airtight property is good, the effect of high quality DLC film that high rigidity and planarization are good.
Moreover, by on thermoelectron radiation means, adding positive charge, can provide energy to ion by the 2nd biasing means, can draw ion from gas ion source efficiently simultaneously.
In addition, be positive and negative alternate voltages by the voltage that makes the 2nd biasing means, can provide energy to ion, perhaps provide electronics by gas ion source.
Claims (8)
1. a diamond like carbon film forms device, forms diamond like carbon film on base material, it is characterized in that, described diamond like carbon film forms device and comprises:
The vacuum tank that keeps the inner vacuum tightness that becomes to stipulate; The base material supporting apparatus that in this vacuum tank, keeps described base material; Adjust the base material temperature adjustment mechanism of the temperature of described base material; In described vacuum tank, be provided with respect to described base material, take place by dissociative carbon and carbon ion with by dissociative hydrogen and hydrionic gas ion source;
Described gas ion source imports the chamber by the reactant gases of establishing throttle orifice and importing gas towards described base material, being arranged on described reactant gases imports indoor and radiates thermionic thermoelectronic emission means, draw thermionic thermoelectron extraction electrode from described thermoelectronic emission means, be arranged on the outside that described reactant gases imports the chamber and the accelerating electrode that described ion quickens is formed towards described base material
Apply the biasing means of voltage for described accelerating electrode, on described base material.
2. diamond like carbon film as claimed in claim 1 forms device, it is characterized in that the biasing means can apply the voltage as the function of time for accelerating electrode, on base material.
3. a diamond like carbon film formation method forms device with described diamond like carbon film, forms diamond like carbon film on base material, it is characterized in that, described diamond like carbon film forms device and comprises:
The vacuum tank that keeps the inner vacuum tightness that becomes to stipulate; The base material supporting apparatus that in this vacuum tank, keeps described base material; Adjust the base material temperature adjustment mechanism of the temperature of described base material; In described vacuum tank, be provided with respect to described base material, take place by dissociative carbon and carbon ion with by dissociative hydrogen and hydrionic gas ion source;
Described gas ion source imports the chamber by the reactant gases that throttle orifice and importing gas are set towards described base material, being arranged on described reactant gases imports indoor and radiates thermionic thermoelectronic emission means, draw thermionic thermoelectron extraction electrode from described thermoelectronic emission means, be arranged on the outside that described reactant gases imports the chamber and the accelerating electrode that described ion quickens is formed towards described base material
Apply the biasing means of voltage for described accelerating electrode, on described base material,
Described diamond like carbon film formation method comprises:
Behind the ion that utilization takes place with described gas ion source, the surface of clean base material, utilize the base material temperature adjustment mechanism that the temperature of base material is controlled to 100 ℃ to 250 ℃, in described gas ion source, import the gas of nytron system simultaneously and on described base material, form diamond like carbon film.
4. diamond like carbon film formation method as claimed in claim 3 is characterized in that,
When the formation of diamond like carbon film, utilize the biasing means on base material, to apply negative voltage as the function of fixed or time for accelerating electrode.
5. diamond like carbon film formation method as claimed in claim 3 is characterized in that,
When the formation of diamond like carbon film, utilize the biasing means on base material, to apply positive and negative alternative voltage for accelerating electrode.
6. a diamond like carbon film forms device, forms diamond like carbon film on base material, it is characterized in that, described diamond like carbon film forms device and comprises:
The vacuum tank that keeps the inner vacuum tightness that becomes to stipulate and put into described base material; Be provided with respect to described base material, take place by dissociative carbon and carbon ion with by dissociative hydrogen and hydrionic gas ion source;
Described gas ion source imports the chamber by the reactant gases that throttle orifice and importing gas are set towards described base material, being arranged on described reactant gases imports indoor and radiates thermionic thermoelectronic emission means, draw thermionic thermoelectron extraction electrode from described thermoelectronic emission means, be arranged on the outside that described reactant gases imports the chamber and the accelerating electrode that described ion quickens is formed towards described base material
Can apply as the 1st biasing means of the voltage of the function of time on the described base material and can on described thermoelectronic emission means, apply the 2nd biasing means for described accelerating electrode for described accelerating electrode as the voltage of the function of time.
7. diamond like carbon film as claimed in claim 6 forms device, it is characterized in that, utilizes the 2nd biasing means for the voltage that accelerating electrode applies on the thermoelectronic emission means, is direct current or time dependent positive voltage.
8. diamond like carbon film as claimed in claim 6 forms device, it is characterized in that, utilizes the 2nd biasing means for the voltage that accelerating electrode applies on the thermoelectronic emission means, is positive and negative alternative voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97117950 CN1178263A (en) | 1996-08-30 | 1997-09-01 | Apparatus and method for forming thin diamond-like films |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP230550/96 | 1996-08-30 | ||
| JP230548/96 | 1996-08-30 | ||
| CN 97117950 CN1178263A (en) | 1996-08-30 | 1997-09-01 | Apparatus and method for forming thin diamond-like films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1178263A true CN1178263A (en) | 1998-04-08 |
Family
ID=5174595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97117950 Pending CN1178263A (en) | 1996-08-30 | 1997-09-01 | Apparatus and method for forming thin diamond-like films |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1178263A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102803554A (en) * | 2009-06-19 | 2012-11-28 | 株式会社捷太格特 | Dlc Film-forming Method And Dlc Film |
| CN103708708A (en) * | 2012-09-28 | 2014-04-09 | Hoya株式会社 | Moulding die, manufacturing method thereof, and method for manufacturing optical glass element |
| CN110724913A (en) * | 2019-11-07 | 2020-01-24 | 西安工业大学 | Resistance thermal evaporation coating device for large-diameter reflector |
| WO2021109813A1 (en) | 2019-12-04 | 2021-06-10 | 江苏菲沃泰纳米科技有限公司 | Coating apparatus and application thereof |
-
1997
- 1997-09-01 CN CN 97117950 patent/CN1178263A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102803554A (en) * | 2009-06-19 | 2012-11-28 | 株式会社捷太格特 | Dlc Film-forming Method And Dlc Film |
| CN102803554B (en) * | 2009-06-19 | 2015-01-07 | 株式会社捷太格特 | Dlc Film-forming Method And Dlc Film |
| CN103708708A (en) * | 2012-09-28 | 2014-04-09 | Hoya株式会社 | Moulding die, manufacturing method thereof, and method for manufacturing optical glass element |
| CN103708708B (en) * | 2012-09-28 | 2017-03-29 | Hoya株式会社 | The manufacture method of compression molding die and its manufacture method and glass optical component |
| CN110724913A (en) * | 2019-11-07 | 2020-01-24 | 西安工业大学 | Resistance thermal evaporation coating device for large-diameter reflector |
| WO2021109813A1 (en) | 2019-12-04 | 2021-06-10 | 江苏菲沃泰纳米科技有限公司 | Coating apparatus and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1181220C (en) | Method for producing coated workpieces, uses and installation for the method | |
| CN100339945C (en) | Plasma processing system and cleaning method for the same | |
| CN1298199C (en) | Plasma treatment method and apparatus | |
| CN1057349C (en) | Plasma processing method and plasma processing apparatus | |
| CN1124365C (en) | Deposited-film forming process and deposited-film forming apparatus | |
| CN1194422C (en) | Method of producing photovoltaic device | |
| CN1160483C (en) | Method for manufacturing thin film, and deposition apparatus | |
| CN1161820C (en) | Method and apparatus for manufacturing semiconductor layers, and manufacture of photovoltaic solar cell | |
| CN100343956C (en) | Plasma working method and equipment and support frame for plasma working | |
| CN1540738A (en) | Plasma treatment appts. focusing ring and base | |
| CN1894763A (en) | Method and apparatus for extracting ions from an ion source for use in ion implantation | |
| CN1187469C (en) | Tool having protective layer system | |
| CN1395270A (en) | Catalyst for forming carbon fibre, its making method and electronic transmitter | |
| CN1630004A (en) | Fiber containing carbon, device using same and method of manufacturing thereof | |
| CN1428817A (en) | Film forming device and film forming method, and cleaning method | |
| CN1906324A (en) | Ion implantation method and ion implantation device | |
| CN1144274C (en) | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method | |
| CN1574155A (en) | Electron emission device, electron source, and image display having dipole layer | |
| CN1934679A (en) | Method and apparatus for forming silicon dots | |
| CN1993806A (en) | Impurity introducing method | |
| CN1692477A (en) | Substrate treating apparatus and method of substrate treatment | |
| CN1178263A (en) | Apparatus and method for forming thin diamond-like films | |
| CN1503324A (en) | Plasma processing method and apparatus | |
| CN101065820A (en) | Electron emission electrode, manufacturing method of the same, and electronic apparatus | |
| CN1303953A (en) | Process and apparatus for forming ionizing film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |