KR20030004738A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
KR20030004738A
KR20030004738A KR1020010040383A KR20010040383A KR20030004738A KR 20030004738 A KR20030004738 A KR 20030004738A KR 1020010040383 A KR1020010040383 A KR 1020010040383A KR 20010040383 A KR20010040383 A KR 20010040383A KR 20030004738 A KR20030004738 A KR 20030004738A
Authority
KR
South Korea
Prior art keywords
processing apparatus
plasma processing
variable
electronic circuit
variable capacitor
Prior art date
Application number
KR1020010040383A
Other languages
Korean (ko)
Other versions
KR100462584B1 (en
Inventor
이정범
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to KR10-2001-0040383A priority Critical patent/KR100462584B1/en
Publication of KR20030004738A publication Critical patent/KR20030004738A/en
Application granted granted Critical
Publication of KR100462584B1 publication Critical patent/KR100462584B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Abstract

PURPOSE: A plasma processor is provided to increase space efficiency and improve field efficiency by simply and efficiently forming the plasma processor. CONSTITUTION: An antenna is installed at an external wall of a process chamber and includes a plurality of spiral coils(200) which are connected to each other in parallel. A matching network(320) is installed among a variable capacitor(310), the spiral coils(200), and a high frequency generator(100). A motor(330) drives the variable capacitor(310). An electronic circuit(340) controls the motor(330). The variable capacitor(310), the matching network(320), the motor(330), and the electronic circuit(340) forms a matching box(300). A housing forms an external case of the variable capacitor(310), the matching network(320), the motor(330), and the electronic circuit(340). The matching box(300) is away from the process chamber by a predetermined distance.

Description

플라즈마 공정장치 {Plasma processing apparatus}Plasma processing apparatus

본 발명은 플라즈마 공정장치에 관한 것으로 특히, 장치를 효율적으로 구성할 수 있는 유도결합 플라즈마를 이용한 플라즈마 공정장치에 관한 것이다.The present invention relates to a plasma processing apparatus, and in particular, to a plasma processing apparatus using an inductively coupled plasma capable of constituting the apparatus efficiently.

최근 플라즈마를 이용하는 반도체 장치에 있어서, 플라즈마의 밀도를 매우 높은 수준으로 유지하기 위한 발명이 지속적으로 이루어지고 있으며 그 중의 하나가 공명 안테나를 사용하는 유도결합 플라즈마(Inductively Coupled Plasma, ICP)를 이용한 플라즈마 공정장치이다.In recent years, semiconductor devices using plasma have been continuously invented to maintain plasma density at a very high level, and one of them is a plasma process using an inductively coupled plasma (ICP) using a resonance antenna. Device.

도 1은 종래의 유도결합 플라즈마를 이용한 플라즈마 공정장치의 구성도이다.1 is a block diagram of a plasma processing apparatus using a conventional inductively coupled plasma.

도 1을 참조하면, 플라즈마 공정장치는 고주파(Radio Frequency, RF) 발생기(10), 공명 안테나(20), 및 공명 안테나(20)와 고주파 발생기(10) 사이에 설치되는 매칭 박스(Matching Box)(30)로 이루어진다. 매칭 박스는(30) 공명 안테나(20)와 고주파 발생기(10) 사이에 임피던스 정합을 유지시켜주도록 고주파 회로로 이루어진 매칭 네트워크(Matching Network)(31), 후술되는 가변 축전기(22)를 구동시키는 구동부(32), 및 구동부(32)를 제어하는 전자회로(33)로 구성되며, 각각 구성요소별로 변종에 해당하는 여러가지 사양들이 있기는 하지만 전체적인 구성은 동일하다. 공명 안테나(20)는 회전수가 각각 다른 복수 개의 나선형 코일(21)과 복수 개의 나선형 코일(21) 중에서 특정 코일에 직렬로 연결된 가변 축전기(22)로 구성된다. 가변 축전기(22)는 공정 특성과 관련하여 전기용량(Capacitance)을 가변하게 되는 데, 이것은 구동부(32)에 의하여 이루어진다.Referring to FIG. 1, the plasma processing apparatus includes a radio frequency (RF) generator 10, a resonance antenna 20, and a matching box installed between the resonance antenna 20 and the high frequency generator 10. It consists of 30. The matching box 30 is a driving unit for driving a matching network 31 made of a high frequency circuit and a variable capacitor 22 to be described later to maintain impedance matching between the resonance antenna 20 and the high frequency generator 10. (32), and the electronic circuit 33 for controlling the driver 32, although there are various specifications corresponding to the variations for each component, the overall configuration is the same. The resonant antenna 20 is composed of a plurality of helical coils 21 and a plurality of helical coils 21 each having a different rotation speed, and a variable capacitor 22 connected in series to a specific coil. The variable capacitor 22 will vary the capacitance in relation to the process characteristics, which is made by the drive 32.

프로세스 챔버 내에서 플라즈마를 발생되도록 나선형 코일들이 프로세스 챔버의 외벽에 설치되게 된다. 그런데, 상술한 바와 같이 나선형 코일이 가변 축전기와 연결되어 공명 안테나를 구성하게 되는 경우에 챔버 주위의 공간이 비효율적으로 운용되며, 플라즈마 공정장치의 구성이 복잡해지는 문제점이 있다.Spiral coils are installed on the outer wall of the process chamber to generate plasma in the process chamber. However, as described above, when the spiral coil is connected to the variable capacitor to form a resonance antenna, the space around the chamber is inefficiently operated, and the configuration of the plasma processing apparatus is complicated.

따라서, 본 발명이 이루고자 하는 기술적 과제는 간단하고 효율적으로 구성함으로써 공간의 활용도를 높이고 작업 능률을 향상시킬 수 있는 플라즈마 공정장치를 제공하는 데 있다.Therefore, the technical problem to be achieved by the present invention is to provide a plasma processing apparatus that can increase the utilization of the space and improve the work efficiency by simply and efficiently configured.

도 1은 종래 유도결합 플라즈마를 이용한 플라즈마 공정장치의 구성도;1 is a block diagram of a plasma processing apparatus using a conventional inductively coupled plasma;

도 2는 본 발명에 따른 유도결합 플라즈마를 이용한 플라즈마 공정장치의 구성도이다.2 is a block diagram of a plasma processing apparatus using an inductively coupled plasma according to the present invention.

상기 기술적 과제를 달성하기 위한 본 발명의 플라즈마 공정장치는, 고주파 발생기와; 챔버 외벽에 설치되며 서로 병렬로 연결되는 복수 개의 나선형 코일과; 상기 나선형 코일과 연결된 가변 부하와, 상기 나선형 코일들과 상기 고주파 발생기 사이에 설치되는 매칭 네트워크와, 상기 가변 부하를 구동시키는 구동부와, 상기 구동부를 제어하는 전자회로와, 상기 가변 부하, 상기 매칭 네트워크, 상기 구동부, 및 전자회로의 외장을 형성하는 하우징으로 이루어지며, 상기 나선형 코일들과 원격지에 설치되는 매칭 박스를 구비하는 것을 특징으로 한다.Plasma processing apparatus of the present invention for achieving the above technical problem, high frequency generator; A plurality of spiral coils installed in the chamber outer wall and connected in parallel with each other; A variable load connected to the helical coil, a matching network installed between the helical coils and the high frequency generator, a driver for driving the variable load, an electronic circuit for controlling the driver, the variable load, the matching network And a housing formed to form the exterior of the driving unit and the electronic circuit, and having a matching box installed in the helical coils and a remote place.

이 때, 상기 가변 부하는 가변 축전기로 이루어져도 좋다.At this time, the variable load may consist of a variable capacitor.

나아가, 상기 가변 부하는 상기 나선형 코일들로부터 선택된 어느 하나와 연결되도록 하나가 설치되거나, 또는 상기 가변 부하는 상기 나선형 코일들 각각과 각각 연결되는 복수 개가 설치되어도 좋다.Further, one variable load may be provided to be connected to any one selected from the spiral coils, or a plurality of variable loads may be provided to be connected to each of the spiral coils.

나아가. 상기 구동부는 회전수가 가변적인 모터로 이루어져도 좋다.Furthermore. The drive unit may be made of a motor having a variable speed.

이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대해 설명한다.Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention.

도 2는 본 발명의 실시예에 따른 유도결합 플라즈마를 이용한 플라즈마 공정장치를 나타낸 구성도이다.2 is a block diagram showing a plasma processing apparatus using an inductively coupled plasma according to an embodiment of the present invention.

도 2를 참조하면, 본 발명에 따른 플라즈마 공정장치는, 고주파 발생기(100)와, 프로세스 챔버 외벽에 설치되며 각각이 서로 병렬로 연결되는 복수 개의 나선형 코일(200)로 이루어진 안테나와, 가변 부하, 예컨대 가변 축전기(310)와, 나선형 코일(200)들과 고주파 발생기(100) 사이에 설치되는 매칭 네트워크(320)와, 가변 축전기(310)를 구동시키기 위한 모터(330)와, 모터(330)를 제어하기 위한 전자회로(340)로 이루어진다. 여기서, 가변 축전기(310), 매칭 네트워크(320), 모터(330), 및 전자회로(340)는 하나의 하우징(350)을 외장으로 하여 매칭 박스(300)를 형성한다. 이 때, 나선형 코일(200)들은 프로세스 챔버의 외벽에 설치되지만, 매칭 박스(300)는 프로세스 챔버로부터 원격지에 설치됨으로써 챔버 주위의 공간을 효율적으로 활용할 수 있다.Referring to FIG. 2, the plasma processing apparatus according to the present invention includes an antenna including a high frequency generator 100, a plurality of spiral coils 200 installed on an outer wall of the process chamber and connected to each other in parallel, a variable load, For example, the variable capacitor 310, the matching network 320 installed between the spiral coils 200 and the high frequency generator 100, the motor 330 for driving the variable capacitor 310, and the motor 330. It consists of an electronic circuit 340 for controlling. Here, the variable capacitor 310, the matching network 320, the motor 330, and the electronic circuit 340 form a matching box 300 with one housing 350 as an exterior. At this time, the spiral coils 200 are installed on the outer wall of the process chamber, but the matching box 300 may be installed remotely from the process chamber to efficiently use the space around the chamber.

나선형 코일(200)은 단권선 또는 복권선으로 이루어져도 좋다. 이 때, 가변 축전기(310)는, 복수 개 설치된 나선형 코일(200)들 각각과 각각 직렬 연결되도록 복수 개가 구비되어도 좋고, 병렬 연결된 나선형 코일(200)들로부터 선택된 어느 하나와 직렬 연결되는 하나만 구비되어도 좋다. 가변 축전기(310)는 회전수가 가변적인 모터(330)의 작동에 의하여 공진상태를 유지시키며, 이것은 각각의 나선형 코일(200)에 동일한 크기의 전류가 흐르도록 함으로써 균일한 플라즈마 밀도를 얻도록 해준다. 모터(330)는 전자회로(340)에 의하여 그 회전수가 제어된다.The spiral coil 200 may consist of a single winding or a double winding. In this case, a plurality of variable capacitors 310 may be provided in series so as to be connected in series with each of the helical coils 200 installed in plural, or only one connected in series with any one selected from the helical coils 200 connected in parallel. good. The variable capacitor 310 maintains a resonance state by the operation of the motor 330 having a variable speed, which allows a uniform plasma density to be obtained by allowing a current of the same magnitude to flow through each spiral coil 200. The rotation speed of the motor 330 is controlled by the electronic circuit 340.

매칭 네트워크(320)는 고주파 발생기(100)와 나선형 코일(200)들 사이에 설치되어 임피던스 정합을 유지시킨다. 이 때, 매칭 네트워크(200)는 당업자들에게 이미 널리 알려진 방식으로 구현할 수 있는 데, 예컨대 가변 인덕터 및 가변 축전기가 병렬로 연결된 간단한 회로로 구현할 수 있다.The matching network 320 is installed between the high frequency generator 100 and the spiral coils 200 to maintain impedance matching. In this case, the matching network 200 may be implemented in a manner well known to those skilled in the art, for example, a simple circuit in which the variable inductor and the variable capacitor are connected in parallel.

상술한 바와 같이 본 발명의 플라즈마 공정장치에 의하면, 나선형 코일들은 프로세스 챔버의 외벽에 설치되지만, 가변 부하, 매칭 네트워크, 구동부, 및 전자회로는 하나의 매칭 박스로 형성하여 프로세스 챔버로부터 원격지에 설치됨으로써 챔버 주위의 공간을 효율적으로 활용할 수 있다.According to the plasma processing apparatus of the present invention as described above, the spiral coils are installed on the outer wall of the process chamber, but the variable load, the matching network, the driver, and the electronic circuit are formed as one matching box and installed remotely from the process chamber. The space around the chamber can be used efficiently.

나아가, 기계적인 작동부 및 전자적인 회로부를 하나의 박스 안에 모두 내장함으로써 점검이 용이하여 작업의 능률을 향상시킬 수 있다.Furthermore, by incorporating both the mechanical operating part and the electronic circuit part in one box, it is easy to inspect and improve the work efficiency.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야의 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited only to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (5)

고주파 발생기와;A high frequency generator; 챔버 외벽에 설치되며 서로 병렬로 연결되는 복수 개의 나선형 코일과;A plurality of spiral coils installed in the chamber outer wall and connected in parallel with each other; 상기 나선형 코일과 연결된 가변 부하와, 상기 나선형 코일들과 상기 고주파 발생기 사이에 설치되는 매칭 네트워크와, 상기 가변 부하를 구동시키는 구동부와, 상기 구동부를 제어하는 전자회로와, 상기 가변 부하, 상기 매칭 네트워크, 상기 구동부, 및 상기 전자회로의 외장을 형성하는 하우징으로 이루어지며, 상기 나선형 코일들과 원격지에 설치되는 매칭 박스를 구비하는 플라즈마 공정장치.A variable load connected to the helical coil, a matching network installed between the helical coils and the high frequency generator, a driver for driving the variable load, an electronic circuit for controlling the driver, the variable load, the matching network And a housing forming the housing and the housing of the electronic circuit, and having a matching box installed at a distance from the spiral coils. 제 1항에 있어서, 상기 가변 부하는 가변 축전기로 이루어지는 것을 특징으로 하는 플라즈마 공정장치.The plasma processing apparatus of claim 1, wherein the variable load comprises a variable capacitor. 제 1항 또는 제2 항에 있어서, 상기 가변 부하는 상기 나선형 코일들로부터 선택된 어느 하나와 연결되도록 하나가 설치되는 것을 특징으로 하는 플라즈마 공정장치.The plasma processing apparatus of claim 1 or 2, wherein the variable load is provided so as to be connected to any one selected from the spiral coils. 제 1항에 있어서, 상기 가변 부하는 상기 나선형 코일들 각각과 각각 연결되는 복수 개가 설치되는 것을 특징으로 하는 플라즈마 공정장치.The plasma processing apparatus of claim 1, wherein a plurality of variable loads are provided to be connected to each of the spiral coils, respectively. 제 1항에 있어서, 상기 구동부는 회전수가 가변적인 모터로 이루어지는 것을 특징으로 하는 플라즈마 공정장치.The plasma processing apparatus of claim 1, wherein the driving unit comprises a motor having a variable speed.
KR10-2001-0040383A 2001-07-06 2001-07-06 Plasma processing apparatus KR100462584B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR10-2001-0040383A KR100462584B1 (en) 2001-07-06 2001-07-06 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0040383A KR100462584B1 (en) 2001-07-06 2001-07-06 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
KR20030004738A true KR20030004738A (en) 2003-01-15
KR100462584B1 KR100462584B1 (en) 2004-12-17

Family

ID=27713733

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0040383A KR100462584B1 (en) 2001-07-06 2001-07-06 Plasma processing apparatus

Country Status (1)

Country Link
KR (1) KR100462584B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101904227A (en) * 2007-12-20 2010-12-01 株式会社爱发科 Plasma source mechanism and film forming apparatus
KR20140059422A (en) * 2012-11-08 2014-05-16 엘아이지에이디피 주식회사 Inductively coupled plasma processing apparatus and control method thereof
KR20140066483A (en) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 Inductively coupled plasma processing apparatus and control method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101170786B1 (en) 2011-03-17 2012-08-02 주식회사 메디플 Low power large treatment area atmospheric pressure plasma generator using high frequency resonator

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4286404B2 (en) * 1999-10-15 2009-07-01 東京エレクトロン株式会社 Matching device and plasma processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101904227A (en) * 2007-12-20 2010-12-01 株式会社爱发科 Plasma source mechanism and film forming apparatus
KR20140059422A (en) * 2012-11-08 2014-05-16 엘아이지에이디피 주식회사 Inductively coupled plasma processing apparatus and control method thereof
KR20140066483A (en) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 Inductively coupled plasma processing apparatus and control method thereof

Also Published As

Publication number Publication date
KR100462584B1 (en) 2004-12-17

Similar Documents

Publication Publication Date Title
KR102624267B1 (en) Control of impedance of rf return path
US9312832B2 (en) High power filter with single adjust for multiple channels
KR100932019B1 (en) Plasma generating device and method, and high frequency drive circuit
JP2002280222A (en) Integrated variable inductor, inductor/varactor tuning circuit
CN1080781A (en) Electrodeless discharge lamp
JPS58107703A (en) Voltage controlled oscillator
US11223240B2 (en) Charging pad and a method for charging one or more receiver devices
JP2015026464A (en) Plasma processor, high frequency supply mechanism and high frequency supply method
US10651657B2 (en) Dynamic adjustment of power for wireless power transmission
KR100462584B1 (en) Plasma processing apparatus
CN107896516A (en) Voltage Waveform Shaping Oscillator
EP1403963B1 (en) AM Antenna Noise Reduction
JPH11340706A (en) Half wavelength resonator type high frequency filter
US6072373A (en) Voltage controlled oscillator with impedance regulation circuit including a switching element
JP2008067052A (en) Mobile wireless antenna device
US20220311461A1 (en) Agile harmonic filtering
CN211929433U (en) System for mass analysis
US1606792A (en) Oscillation generator for current of continuously varying frequency
US11258412B2 (en) Radio frequency (RF) device having tunable RF power amplifier and associated methods
JP2008005313A (en) Antenna system
KR100481310B1 (en) Variable inductor
US3406403A (en) Variable frequency oscillator
KR200248563Y1 (en) Automatic matching device
JP2021144837A (en) Signal conversion device and device control system
KR100206796B1 (en) Filament of magnetron for microwave oven

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121011

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20131001

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20141103

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20151201

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20160927

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20171011

Year of fee payment: 14

FPAY Annual fee payment

Payment date: 20181001

Year of fee payment: 15