CN104937707A - Substrate tray and substrate processing apparatus including same - Google Patents

Substrate tray and substrate processing apparatus including same Download PDF

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Publication number
CN104937707A
CN104937707A CN201380058399.2A CN201380058399A CN104937707A CN 104937707 A CN104937707 A CN 104937707A CN 201380058399 A CN201380058399 A CN 201380058399A CN 104937707 A CN104937707 A CN 104937707A
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CN
China
Prior art keywords
substrate
band
principal axis
tray
substrate tray
Prior art date
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Granted
Application number
CN201380058399.2A
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Chinese (zh)
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CN104937707B (en
Inventor
赵晟佑
金钟寅
朴慈日
李基哲
崔钟龙
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Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
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Publication of CN104937707A publication Critical patent/CN104937707A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

The present invention relates to a substrate tray and a substrate processing apparatus including same. The substrate tray includes: a plurality of straps for supporting a plurality of substrates arranged in a first axial direction; and a supporting frame to which a plurality of the straps is coupled in a second axial direction perpendicular to the first axial direction, wherein the straps are each formed in a length greater than the substrates in the second axial direction. According to the present invention, a plurality of straps are used to support a plurality of substrates, so that a substrate tray can easily be made large in size by increasing the number of straps.

Description

Substrate tray and comprise the substrate processing apparatus of this substrate tray
Technical field
The present invention relates to a kind of substrate tray for mounting substrate and comprise the substrate processing apparatus of this substrate tray.
Background technology
Substrate processing apparatus is used to the technique of carrying out the veining technique of etching substrates, the technique forming semiconductor layer and formation electrode.This substrate processing apparatus carries out above-mentioned technique by using the substrate tray that can load multiple substrate.Such as, thin-film material can be deposited on multiple substrates of being loaded into fixed intervals on substrate tray by the substrate processing apparatus for carrying out thin film deposition processes (such as, plasma deposition process) simultaneously.
Fig. 1 schematically shows substrate tray of the prior art.
With reference to Fig. 1, substrate tray 10 of the prior art can comprise support frame 11 and supporting bracket 12.Support frame 11 is formed as rectangular frame, and support frame 11 is combined with the edge of supporting bracket 112, thus forms the outward flange of substrate tray 10.Supporting bracket 12 is formed as writing board shape, and is combined with support frame 11.Supporting bracket 12 has multiple substrate (S) loaded with fixed intervals.
Substrate tray 10 of the prior art has following problem.First, in order to realize large-sized substrate tray 10, the size of the supporting bracket 12 being wherein mounted with multiple substrate (S) must be increased.But, if increase a kind of size of supporting bracket 12 of structure, the material for the manufacture of supporting bracket 12 will be consumed excessively, the manufacturing cost of supporting bracket 12 is increased.And, inevitably also need to increase the equipment for the manufacture of supporting bracket 12.In this respect, it is conditional for increasing supporting bracket 12.
In addition, along with supporting bracket 12 manufactures large scale, the weight of supporting bracket 12 also can increase.In addition, along with substrate (S) quantity being loaded into supporting bracket 12 increases, the total weight of substrate (S) also can increase.When supporting bracket 12 edge and support frame 11 in conjunction with time, due to the increase of supporting bracket 12 and substrate (S) weight, the centre away from the supporting bracket 12 of support frame 11 can sink.Correspondingly, may occur in substrate processing apparatus inside substrate (S) dislocation, thus produce defect, such as substrate pick up unsuccessfully with technique inhomogeneities.
Summary of the invention
Technical problem
Correspondingly, the present invention relates to a kind of substrate tray and comprise the substrate processing apparatus of this substrate tray, substantially can eliminate the one or more problems caused by the limitation of prior art and shortcoming.
Technical scheme
In one aspect of the invention, provide a kind of be convenient to realize large scale and prevent by the substrate tray of the defect sinking to causing and the substrate processing apparatus comprising this substrate tray.
The invention provides a kind of substrate tray, this substrate tray can comprise: multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And support frame, be connected with described multiple being with perpendicular on described first axial second direction of principal axis, wherein, be greater than the length of described substrate relative to the length of each described band of described second direction of principal axis.
In another aspect of the present invention, provide a kind of substrate processing apparatus, this substrate processing apparatus can comprise: process chamber, for providing process space; Bearing apparatus, is arranged in described process chamber movably; And substrate tray, be loaded onto described process space and supported by described bearing apparatus, wherein, described substrate tray comprises: multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And support frame, be connected with described multiple being with perpendicular on described first axial second direction of principal axis, wherein, be greater than the length of described substrate relative to the length of each described band of described second direction of principal axis.
In another aspect of the present invention, provide a kind of substrate processing apparatus, this substrate processing apparatus can comprise: process chamber, for providing process space; Bearing apparatus, is arranged in described process chamber movably; And substrate tray, be loaded onto described process space and supported by described bearing apparatus, wherein, described substrate tray comprises: multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And support frame, be connected with described multiple being with perpendicular on described first axial second direction of principal axis, wherein, equaling the length of described substrate relative to the length of each described band of described second direction of principal axis.
Technique effect
The present invention has following technique effect.
According to the present invention, due to by using multiple band to support multiple substrate, therefore realizing large-size substrate pallet easily through the quantity increasing band, the processing substrate of simultaneously carrying out the substrate that quantity adds can be accomplished whereby, thus improve output.
In addition, by using multiple band to support multiple substrate, and being maintained the tension force of band consistently by the elastic component of tension force maintenance component, can accomplish whereby to prevent each band from sinking, thus prevent defective workmanship, as substrate pick up unsuccessfully with the inhomogeneities etc. of technique.
Accompanying drawing explanation
Fig. 1 schematically shows the substrate tray of prior art;
Fig. 2 shows substrate tray of the present invention;
Fig. 3 is decomposition diagram, shows the support frame of substrate tray as shown in Figure 2;
Fig. 4 to Fig. 6 shows the various embodiments of protuberance in band;
Fig. 7 shows another embodiment of band;
Fig. 8 to Figure 11 shows the various embodiments that tension force maintains unit and connecting portion;
Figure 12 shows the operating process that tension force maintains unit;
Figure 13 shows an embodiment of installation unit and fixed part;
Figure 14 is cutaway view, shows the installation unit in Figure 13;
Figure 15 shows the another one embodiment of installation unit and fixed part;
Figure 16 is cutaway view, shows the second installation unit in Figure 15; And
Figure 17 and Figure 18 shows substrate processing apparatus of the present invention.
Embodiment
Be described in detail with reference to exemplary embodiments of the present invention, these embodiments are illustrated in the accompanying drawings.In the case of any possible, in institute's drawings attached, same or analogous part uses identical Reference numeral.
The effect that substrate tray 1 of the present invention plays is for supporting pending multiple substrates (S) and they being loaded into substrate processing apparatus inside.Here, processing substrate can be carried out to substrate (S), such as, depositing operation, etching technics, cleaning etc.
With reference to Fig. 2, substrate tray 1 of the present invention can comprise: multiple band 3, for being supported on multiple substrates (S) that the first direction of principal axis (X-coordinate direction of principal axis) is arranged; And support frame 2, this support frame 2 with combine at multiple bands 3 of the second direction of principal axis (Y-coordinate direction of principal axis, perpendicular to the first direction of principal axis).About the second direction of principal axis (Y-coordinate direction of principal axis), the length of each band 3 is relatively greater than the length of substrate (S).
Band 3 supports multiple substrate (S).Band 3 is supported on multiple substrates (S) that the first direction of principal axis (X-coordinate direction of principal axis) is arranged.That is, multiple substrate (S) is arranged in the first direction of principal axis (X-coordinate direction of principal axis) on band 3, and is supported by band 3.
Each band 3 is formed with the band shape that width is shorter.In each band 3, the length of the first direction of principal axis (X-coordinate direction of principal axis) is greater than the length of the second direction of principal axis (Y-coordinate direction of principal axis).
About the second direction of principal axis (Y-coordinate direction of principal axis), the length of each band 3 is greater than the length of substrate (S).At the second direction of principal axis (Y-coordinate direction of principal axis), compared with the length of substrate (S), the length of multiple band 3 is larger.That is, the width of multiple band 3 is greater than the width of substrate (S).Correspondingly, the whole back side of substrate (S) is in the state contacted with multiple band 3.That is, the back side of substrate (S) does not have the region that do not contact with multiple band 3.
Support frame 2 can be combined with multiple band 3.When arranging multiple band 3 along the second direction of principal axis (Y-coordinate direction of principal axis), multiple band 3 is combined with support frame 2.Support frame 2 is formed with the rectangular frame shape with opening.Multiple band 3 is arranged in the opening of support frame 2.Finally, support frame 2 supports multiple band 3, and forms the outward flange of substrate tray 1 simultaneously.
Substrate tray 1 of the present invention can have following effect.
The first, in order to increase the size of substrate tray 1 of the present invention, increasing the quantity of band 3, instead of increasing the size of each band 3.In order to obtain the size of the increase of substrate tray 1 of the present invention, increasing the quantity of band 3, and additionally need not manufacture large-sized band 3.That is, arrange that band 3 is to increase the overall dimensions of substrate tray 1 extraly at the second direction of principal axis (Y-coordinate direction of principal axis).Correspondingly, this promotes the size increasing substrate tray 1 of the present invention.Large-size substrate pallet 1 of the present invention can realize the processing substrate of the substrate (S) for increasing quantity, and improves the output of substrate (S).
The second, although the quantity of increase band 3 is to increase the size of substrate tray of the present invention, the size of each band 3 keeps equal, so the weight of each band 3 does not increase.Therefore, it is possible to accomplish the sinking preventing each band 3 from causing due to own wt, thus avoid picking up unsuccessfully with the defect such as the inconsistency of technique, and improve the output of substrate (S).
3rd, the back side of substrate (S) is in the state with the comprehensive engagement of all bands 3, makes it possible to accomplish to prevent reaction raw materials from infiltrating through gap between band 3, and prevents from reacting with the back side of substrate (S).That is, can accomplish to prevent reaction raw materials and other partial reactions except treating the predetermined portions of the substrate of PROCESS FOR TREATMENT.Correspondingly, by prevent with the predetermined portions of the substrate except treating PROCESS FOR TREATMENT except other partial reactions, the consumption greatly reducing reaction raw materials can be accomplished, and then improve about the process efficiency of substrate (S).
4th, the back side of substrate (S) and all bands 3 keep the state of comprehensive engagement, make it possible to accomplish to maintain thermal conductivity coefficient consistently on whole substrate (S).That is, maintain consistently in technique be delivered to substrate (S) even if heat make technique terminate after also can prevent substrate (S) from fading, thus improve substrate (S) quality.
Hereinafter, with reference to the support frame 2 described in accompanying drawing detailed description embodiments of the invention and multiple band 3.
With reference to Fig. 2 and Fig. 3, support frame 2 is formed with the rectangular frame shape with opening, thus supports multiple band 3.In order to reach this object, support frame 2 can comprise the first to the four framing component 21,22,23 and 24.
First framing component 21 and the second framing component 22 arranged in parallel, and between which with the multiple band 3 of mutual arranged at predetermined intervals.Owing to shifting the first framing component 21 and the second framing component 22 by use pallet transfer device (not shown) in substrate processing apparatus, first framing component 21 and the second framing component 22 are all formed by metal material, to prevent the wearing and tearing occurred because contacting with pallet transfer device (i.e. tray transporting roller).Such as, the first framing component 21 and the second framing component 22 can be formed by aluminum or the metal material comprising aluminum.
3rd framing component 23 and the 4th framing component 24 are combined with two ends of the first framing component 21 and the second framing component 22.Correspondingly, by be combineding with each other of the first and second framing component 21,22 and third and fourth framing components 23,24, form support frame 2 with the shape of rectangular frame.3rd framing component 23 and the 4th framing component 24 can be formed by ceramic material or the nonmetallic materials comprising ceramic material.
As shown in " C " part of Fig. 3, the two ends of the 3rd framing component 23 are inserted in the first groove 211a of corner's preparation of one end of each first framing component 21 and the second framing component 22 respectively, and by using fixture 231 to be combined with the first groove 211a.In this case, fixture 213 can be screw or the bolt with plate-like head.
As shown in " D " part of Fig. 3, the two ends of the 4th framing component 24 are inserted in the second groove 211b of corner's preparation of the other end of each first framing component 21 and the second framing component 22 respectively, and by using fixture 231 to be combined with the second groove 211b.In this case, fixture 213 can be screw or the bolt with plate-like head.
With reference to Fig. 2, in support frame 2, multiple band 3 is set with fixed intervals, thus supports multiple substrate (S).Multiple band 3 is arranged with fixed intervals along the second direction of principal axis (Y-coordinate direction of principal axis).Multiple band 3 supports multiple substrate (S) respectively.Form multiple band 3 with the band shape with preset width and length, and be combined with the third and fourth framing component 23,24.In the accompanying drawings, there are four to be with 3, but are not limited to four.That is, the quantity of band 3 can greater or less than four.
Multiple band 3 is set with fixed intervals, and arranges multiple band 3 along the second direction of principal axis (Y-coordinate direction of principal axis).When implementing the processing substrate of substrate (S), multiple band 3 can be heated thus be expanded at the second direction of principal axis (Y-coordinate direction of principal axis).Therefore, along the second direction of principal axis (Y-coordinate direction of principal axis), multiple band 3 is set with fixed intervals.
Multiple band 3 is formed by the metal material with low thermal coefficient of expansion and high heat conductance.Such as, multiple band 3 can by aluminum, alloy material based on Inconel, Hastelloy (Hastelloy) material, be formed based on any one in the alloy material of Hastelloy and metal material (as scribbling the Hastelloy material of aluminium).
Each of multiple band 3 supports multiple substrate (S).Multiple substrate is set in each band 3, and arranges along the first direction of principal axis (X-coordinate direction of principal axis).In the accompanying drawings, support four substrates (S) by each band 3, but be not limited to four.The quantity of the substrate (S) that each band 3 supports can greater or less than four.
If the substrate (S) that multiple band 3 supports is formed with the quadrangle form of rule, the width of substrate (S) or length are less than the length of second direction of principal axis (Y-coordinate direction of principal axis) of band 3.That is, the length of second direction of principal axis (Y-coordinate direction of principal axis) of band 3 corresponds to the width of band 3, thus the width of band 3 is greater than width or the length of substrate (S).
If the substrate (S) that multiple band 3 supports is formed with rectangular shape, substrate (S) has long limit and minor face.First, if the long limit of substrate (S) is set to be parallel to the first direction of principal axis (X-coordinate direction of principal axis), the minor face of substrate (S) is set to be parallel to the second direction of principal axis (Y-coordinate direction of principal axis), and the width of band 3 is greater than the minor face of substrate (S).Secondly, if the minor face of substrate (S) is set to be parallel to the first direction of principal axis (X-coordinate direction of principal axis), the long limit of substrate (S) is set to be parallel to the second direction of principal axis (Y-coordinate direction of principal axis), and the width of band 3 is greater than the long limit of substrate (S).Finally, no matter be the minor face of substrate (S) or long limit, be greater than the length of the substrate (S) that multiple band 3 supports relative to the length of the second direction of principal axis (Y-coordinate direction of principal axis) each band 3.
When forming the length of each band 3, the whole back side of substrate (S) contacts with band 3.
With reference to Fig. 2 and Fig. 4, each band 3 can comprise the stayed surface 31 for supporting multiple substrate (S).That is, can by each with 3 stayed surface 31 support multiple substrate (S).The stayed surface 31 of each band 3 arranges multiple substrate (S) along the first direction of principal axis (X-coordinate direction of principal axis).
The region of stayed surface 31, namely arranges the region of each substrate (S), is defined as Support (SA).The shape that can correspond to substrate (S) forms Support (SA).As shown in drawings, all substrates (S) all well-regulated quadrangle forms of tool that stayed surface 31 supports, Support (SA) has the regular quadrilateral shape corresponding to substrate (S) whereby.
Multiple band 3 can comprise multiple protuberance 32.Multiple substrates (S) that stayed surface 31 supports can be positioned on each Support (SA) by multiple protuberance 32.
Multiple protuberance 32 projects upwards from stayed surface 31.That is, the stayed surface 31 by projecting upwards forms protuberance 32.Protuberance 32 is formed in outside each limit of each Support (SA).Multiple protuberance 32 can be set along each limit of Support (SA), or from each limit of Support (SA), multiple protuberance 32 can be set with preset space length.That is, if multiple substrate (S) is supported by stayed surface 31, multiple protuberance 32 can contact with each limit of each substrate (S), or can arrange multiple protuberance 32 along each limit of each substrate (S) with predetermined spacing.
Protuberance 32 is formed on stayed surface 31, and is positioned on the periphery of Support (SA).If band 3 supports multiple substrate (S), protuberance 32 guides multiple substrate to settle multiple substrate (S) in respective Support (SA).In addition, when substrate tray 1 is loaded onto substrate processing apparatus, protuberance 32 prevents multiple substrate (S) from departing from from respective Support (SA).If any one substrate (S) departs from from Support (SA), can be difficult to intactly implement the reaction about multiple substrate (S), thus reduce the process efficiency of substrate (S).In addition, when substrate tray 1 unloads from substrate processing apparatus 100, protuberance 32a prevents multiple substrate (S) from departing from from band 3, that is, prevents multiple fixing substrate (S) from departing from from band 3 and damaging.
Multiple protuberance 32 can be formed by punching, wherein can have ∩ shape cross section from each protuberance 32 that the stayed surface 31 each band 3 is outstanding.The protuberance 32 formed by punching is called as the first protuberance 32a.The first protuberance 32a can be formed in all four limits of Support (SA).As shown in drawings, each limit on limit faced by two on the first direction of principal axis (X-coordinate direction of principal axis) can be formed in the first protuberance 32a, thus on the limit faced by two of the first direction of principal axis (X-coordinate direction of principal axis), fully can form two in the first protuberance 32.In addition, each limit on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis) can be formed two in the first protuberance 32a, thus on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis), fully can form four in the first protuberance 32.But the quantity of the first protuberance 32a can be greater than or less than above-mentioned quantity.
With reference to Fig. 5, provide the multiple protuberances 32 shown in another example.If form protuberance 32 by punching on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis) in multiple band 3, following problem can be produced.If by punching formed protuberance 32, due to Support (SA) limit and band 3 limit between small space, the inside of Support (SA) can tilt.Therefore, multiple substrates (S) that Support (SA) supports do not contact with the stayed surface of band 3, can produce gap whereby between substrate (S) and stayed surface 31.In this case, reaction material can infiltrate through gap, then reacts with the back side of substrate (S), thus reduces the process efficiency of substrate (S).
After the some parts on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis) in multiple band 3 is cut, the part cut out be bent upwards thus form protuberance 32, being called as the second protuberance 32b.In this case, be with 3 a part be cut open and be bent upwards thus the second protuberance 32b from stayed surface 31 projection.In this case, even if form the second protuberance 32b, also can prevent Support (SA) from tilting.In addition, even if there is small space between the limit of Support (SA) and the limit of band 3, also the second protuberance 32b can easily be formed by the incision degree of adjustment belt 3.
Even if when forming the second protuberance 32b on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis), on the limit that two of the first direction of principal axis (X-coordinate direction of principal axis) of Support (SA) are relative, form the first protuberance 32a by punching.This is because by performing cutting technique, on two of the first direction of principal axis (X-coordinate direction of principal axis) relative limits, form protuberance 32 be difficult.
In this article, each limit on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis) is formed in the second protuberance 32b, each limit on the limit faced by two of the first direction of principal axis (X-coordinate direction of principal axis) is formed in the first protuberance 32a.But the first protuberance 32a on each limit or the quantity of the second protuberance 32b can be more than one.
With reference to Fig. 6, multiple protuberances 32 of another example are shown.
According to embodiments of the invention, on the limit faced by Support (SA) two of the first direction of principal axis (X-coordinate direction of principal axis), form the first protuberance 32a by punching.But, also can save protuberance 32a or 32b along on the limit faced by two of the second direction of principal axis (Y-coordinate direction of principal axis).
When substrate tray 1 is loaded in substrate processing apparatus 100, or when unloading from substrate processing apparatus 100, substrate tray 1 is mobile along the first direction of principal axis (X-coordinate direction of principal axis).That is, along with substrate tray 1 moves, the multiple substrates (S) supported by multiple band 3 are mobile at the first direction of principal axis (X-coordinate direction of principal axis), thus depart from from Support (SA) possibly very greatly.Therefore, on the limit faced by Support (SA) two of the first direction of principal axis (X-coordinate direction of principal axis), adjacent place forms the first protuberance 32a.Whereby, the function realizing the first protuberance 32a when multiple substrate (S) is directed can be accomplished.
With reference to Fig. 7, each band 3 can comprise the heat transfer part 33 that centre penetrates.Heat easily can be delivered to the multiple substrates (S) supported by multiple band 3 by heat transfer part 33.That is, the stayed surface 31 by partly opening band 3 forms heat transfer part 33.
The size of heat transfer part 33 is less than the size of each substrate 3.Therefore, even if during gap between the band 3 that reaction raw materials infiltrates through two vicinities in substrate process, the contact greatly reducing reaction material and substrate back also can be accomplished.
Heat directly can be delivered to multiple substrate (S) by heat transfer part 33, thus improves the process efficiency of substrate (S).
In addition, heat transfer part 33 greatly reduces the contact between band 3 and substrate (S), and greatly increases the exposure of substrate back.That is, form heat transfer part 33 with the preliminary dimension being less than substrate (S) size, wherein the preliminary dimension of heat transfer part 33 is defined as can full-size in the scope of supporting substrate (S).Preferably, the size of heat transfer part 33 is defined as such scope, namely can support other parts except substrate (S) corresponding part except treating PROCESS FOR TREATMENT, and can expose the corresponding part of the substrate (S) treating PROCESS FOR TREATMENT.In this case, treat that substrate (S) corresponding part of PROCESS FOR TREATMENT does not contact with band 3, thus prevent substrate (S) from fading.
Heat is delivered to substrate (S) by heat transfer part 33, and prevents the accessory substance in substrate process between reaction material and substrate (S) from remaining on band 3.After substrate (S) and reaction raw materials have reacted, accessory substance (as powder) can be produced.If the band 3 remaining accessory substance supports another substrate, accessory substance can affect this another substrate.That is, if there is accessory substance to remain between band 3 and substrate (S), heat can not be delivered to substrate (S), thus can reduce the process efficiency of substrate (S).But, owing to penetrating the existence of the heat transfer part 33 of band 3, can accomplish to prevent accessory substance from remaining on band 3, thus overcome above problem.
With reference to Fig. 2 and Fig. 8, substrate tray 1 of the present invention can comprise multiple tension force and maintain unit 4, for maintaining tension force in each band 3.Tension force maintains unit 4 and is connected with each band 3, thus maintains tension force in each band 3.Tension force maintains unit 4 and maintain tension force in each band 3, the weight of the multiple substrates (S) preventing each band 3 from supporting due to own wt and each band 3 and sinking.
Tension force maintains the outside that unit 4 is arranged on support frame 2, maintains the tension force in each band 3 consistently.Tension force maintains unit 4 and can be connected with the end of each band 3 in support frame 2 outside.
Each band 3 can comprise the connecting portion 34 maintaining unit 4 with tension force and be connected.Connecting portion 34 can be the end of each band 3.That is, the width of connecting portion 34 can be identical with the width of stayed surface 31.That is, equal with the length of the connecting portion 34 at the second direction of principal axis (Y-coordinate direction of principal axis) in the length of the stayed surface 31 of the second direction of principal axis (Y-coordinate direction of principal axis).
Consider that tension force maintains the size of unit 4, if the width of stayed surface 31 is equal with the width of connecting portion 34, the spacing between two adjacent bands 3 becomes large.If the spacing between adjacent two bands 3 becomes greatly, the quantity of the band 3 arranged in the substrate tray 1 of same size reduces, so the quantity of the substrate (S) of band 3 support also reduces.That is, owing to will be reduced by the quantity of the substrate of a PROCESS FOR TREATMENT (S), so the output of substrate (S) also reduces.
Therefore, preferably the width of connecting portion 34 is less than the width of stayed surface 31.That is, between stayed surface 31 and connecting portion 34, there is width difference.
If arrange a tension force maintenance unit 4, tension force maintenance unit 4 to be not enough to stably maintain the tension force in each band 3 in each band 3.Therefore, each band 3 can comprise the multiple connecting portions 34 from each band 3 bifurcated.Multiple connecting portion 34 extends from the end of each band 3 along the first direction of principal axis (X-coordinate direction of principal axis).Each connecting portion 34 and tension force maintain unit 4 and are connected.
Multiple connecting portion 34 is from each band 3 bifurcated, and wherein the width of each connecting portion 34 is less than the width of band 3.Consider that tension force maintains the width of unit 4, multiple connecting portion 34 is arranged as contiguous with the center of stayed surface 31 instead of contiguous with the limit faced by two of second direction of principal axis (Y-coordinate direction of principal axis) of stayed surface 31.That is, multiple connecting portion 34 is arranged to, at the outside of the second direction of principal axis (Y-coordinate direction of principal axis) and arranged outside one range difference of stayed surface 31.
With reference to Fig. 2 and Fig. 8, tension force maintains unit 4 and can comprise: sliding support 41, and this sliding support 41 is connected with connecting portion 34; And elastic component 42, this elastic component is arranged between sliding support 41 and support frame 2.Tension force maintains unit 4 can comprise pilot pin 43, and this pilot pin 43 for the motion of guided slidable support 41, and maintains the position of elastic component 42 simultaneously.Tension force maintains unit 4 can comprise the fixed block 44 be connected with sliding support 41, connecting portion 34 and sliding support 41 to be interconnected.
In addition, a tension force maintenance unit 4 can comprise multiple pilot pin 43.Pilot pin 43 can be arranged as with connecting portion 34 contiguous.Pilot pin 43 can be arranged on the outside of support frame 2.Pilot pin 43 is arranged in the 4th framing component 24 of support frame 2, and is formed in from the center of support frame 2 towards the direction of the first direction of principal axis (X-coordinate direction of principal axis).That is, pilot pin 43 is arranged on position parallel with connecting portion 34 in the 4th framing component 24.
Sliding support 41 is connected with pilot pin 43 and connecting portion 34.Sliding support 41 is arranged as parallel with the 4th framing component 24.That is, sliding support 41 extends along the second direction of principal axis (Y-coordinate direction of principal axis).Sliding support 41 is arranged in pilot pin 43 movably.In order to reach this object, sliding support 41 has the hole inserted regularly by pilot pin 43.The shape of the hole that sliding support 41 comprises is consistent with the shape of pilot pin 43.
By using fixed block 44, sliding support 41 is connected with connecting portion 34.Sliding support 41 can have the groove inserted regularly by fixed block 44.Fixed block 44 is inserted in the groove of sliding support 41, and is connected with sliding support 41.Connecting portion 34 is placed between fixed block 44 and sliding support 41, and is connected with sliding support 41 by connecting portion 34 by the connection between fixed block 44 and sliding support 41.That is, when fixed block 44 is connected with sliding support 41, apply pressure to connecting portion 34, connecting portion 34 is connected with sliding support 41 whereby.
Elastic component 42 is arranged between the 4th framing component 24 and sliding support 41, thus covers pilot pin 43.The side of elastic component 42 contacts with the 4th framing component 24, and the opposite side of elastic component 42 contacts with sliding support 41.When elastic component 42 is compressed with predetermined power, between the 4th framing component 24 and sliding support 41, arrange elastic component 42.That is, apart from one another at the first direction of principal axis (X-coordinate direction of principal axis) the 4th framing component 24 and sliding support 41.Finally, pressure is applied to sliding support 41 (slipper bracket 41 is arranged in pilot pin 43 movably by elastic component 42), thus settles sliding support 41 on the direction of the first direction of principal axis (X-coordinate direction of principal axis) away from the 4th framing component 24.Due to by elastic component 42 to sliding support 41 applied pressure, the connecting portion that is connected with sliding support 41 34 and the band 3 comprising connecting portion 34 are by towards the direction tractive away from the 4th framing component 24.
With reference to Fig. 8, two connecting portions 34 in the first embodiment of the present invention from band 3 bifurcated out.In addition, the tension force maintenance unit 4 of the first embodiment of the present invention is connected with the connecting portion 34 of each bifurcated.That is, two tension force maintenance unit 4 are with 3 to be connected with one.
Each connecting portion 34 is equipped with a pair pilot pin 43 and pair of resilient members 42.In addition, sliding support 41 is connected with each connecting portion 34.
With reference to Fig. 9, three connecting portions 34 in second embodiment of the invention from band 3 bifurcated out.In addition, the tension force in second embodiment of the invention maintains unit 4 and is connected with the connecting portion 34 of each bifurcated.That is, three tension force maintenance unit 4 are with 3 to be connected with one.
Maintain unit 4 according to a band 3 with three tension force to be connected, can accomplish to maintain by three tension force the tension force that unit 4 stably maintains band 3.
According to above first and second embodiments of the present invention, the quantity that the quantity of connecting portion 34 and tension force maintain unit 4 can be two or three, but is not limited to these quantity.That is, the quantity of connecting portion 34 and the quantity of tension force maintenance unit 4 can be greater than above-mentioned quantity.
With reference to Figure 10, two connecting portions 34 in third embodiment of the invention from band 3 bifurcated out.Tension force in third embodiment of the invention maintains unit 4 and is connected with two total connecting portions 34.That is, a tension force maintenance unit 4 is with 3 to be connected with one.
Tension force maintains unit 4 can comprise pair of resilient members 42 and a pair pilot pin 43.
Herein, between two connecting portions 34, arrange pair of resilient members 42 and a pair pilot pin 43.Sliding support 41 is connected with two connecting portions 34.Tension force in third embodiment of the invention maintains unit 4 can comprise two fixed blocks 44, to be connected with sliding support 41 by two connecting portions 34.
With reference to Figure 11, three connecting portions 34 in fourth embodiment of the invention from band 3 bifurcated out.Tension force in fourth embodiment of the invention maintains unit 4 and is connected with three total connecting portions 34.That is, a band 3 maintains unit 4 with a tension force and is connected.
Tension force maintains unit 4 can comprise two pairs of elastic components 42 and two pairs of pilot pins 43.Pair of resilient members 42 and a pair pilot pin 43 are set between two adjacent connectors 34, thus two pairs of elastic components 42 and two pairs of pilot pins 43 are provided.
Sliding support 41 is connected with three connecting portions 34.In addition, three fixed blocks 44 corresponding with the quantity of connecting portion 34 are set.
Hereinafter, the operating process of tension force maintenance unit 4 will be described in detail together with accompanying drawing.
With reference to Figure 12, the elastic component 42 that tension force maintains unit 4 promotes sliding support 41 by use elastic force and is fixed to connecting portion 34 and the band 3 of sliding support 41, makes promotion sliding support 41 and band 3 away from the 4th framing component 24.
As shown in the upper figure in Figure 12, although elastic component 42 promotes connecting portion 34 and band 3, due to material properties, band 3 still keeps its original length.
But if band 3 supports multiple substrate (S), and pass through the heat heating tape 3 of substrate (S) technique, the length of band 3 can increase.Suppose do not have tension force to maintain unit 4, if be all fixed on support frame 2 by the two ends of band 3, due to gravity, the center of band 3 can sink.But tension force maintains unit 4 and draws connecting portion 34 and band 3 towards the direction away from the 4th framing component 24.Therefore, although band 3 length increases, elastic component 42 still can return to its original-shape, and the band 3 increased by length whereby promotes connecting portion 34 and band 3 towards the direction away from the 4th framing component 42.So band 3 keeps tension and does not sink.As shown in the figure below in Figure 12, arrow represents the length that band 3 increases.
No longer heating tape 3 after the technique of substrate (S) completes, and when multiple substrate (S) is removed from band 3, band 3 returns to its original length.In this case, owing to being greater than the elastic force of elastic component 42 with the restoring force of 3, as shown in the upper figure in Figure 12, elastic component 42 returns to compressive state.
With reference to Figure 13, substrate tray 1 of the present invention can comprise at least one installation unit 5, and this installation unit 5 for installing multiple band 3 on support frame 2.In all bands 3, be connected with tension force and maintaining the opposite side connection unit 5 of side of unit 4.
Multiple band 3 can comprise fixed part 35, and this fixed part 35 is formed on the side relative with stayed surface 31 of connecting portion 34.That is, connecting portion 34 is formed in one end of each band 3, and fixed part 35 is formed at the other end of each band 3.
Fixed part 35 can be formed by the end furcations of each band 3.Therefore, the width of fixed part 35 is less than the width of stayed surface 31.That is, relative to the second direction of principal axis (Y-coordinate direction of principal axis), the length of fixed part 35 is less than the length of stayed surface 31.But the width of fixed part 35 can be identical with the width of stayed surface 31.Due to the end by installation unit 5 fixed band 3, so be simply described through the fixed part 35 of band 3 end furcations formation.
The end furcations of each band 3 become two fixed parts, 35, two fixed parts 35 each be connected with installation unit 5.
Arrange fixed part 35 along with between the 3rd framing component 23 and installation unit 5, and the 3rd framing component 23 of support frame 2 is connected with installation unit 5, mounting part 35 on support frame 2.3rd framing component 23 can be set to the groove for installation unit 5.
Tension force maintains one end that unit 4 draws each band 3, by the other end using installation unit 5 to fix each band 3, can accomplish whereby to maintain the tension force in multiple band 3.
With reference to Figure 13 and Figure 14, installation unit 5 can comprise the acceptance division 51 for receiving fixed part 35.The installation unit 5 comprising acceptance division 51 is called as the first installation unit 5.Acceptance division 51 is larger than fixed part 35.That is, the size of acceptance division 51 is confirmed as such scope, the fixed part 35 during namely can being received in substrate (S) technique after heating and after expanding.That is, acceptance division 51 is the predetermined spaces that wherein can receive fixed part 35.
3rd framing component 23 is set to the groove for the first installation unit 5.First installation unit 5 is inserted in this groove, is then connected with the 3rd framing component 23.Fixed part 35 is arranged between the 3rd framing component 23 and the first installation unit 5.When the 3rd framing component 23 and the first installation unit 5 are connected to each other, fixed part 35 connects and is fixed to the 3rd framing component 23 and the first installation unit 5.
The space formed between first installation unit 5 and the 3rd framing component 23 is acceptance division 51, for receiving fixed part 35.Acceptance division 51 is larger than band 3.
With reference to Figure 15, substrate tray 1 of the present invention can comprise multiple installation unit 5, and multiple installation unit 5 for installing multiple band 3 on support frame 2.Installation unit 5 is connected with the fixed part 35 of band 3.
Band 3 is branched into three fixed parts 35.
Among multiple fixed part 35, installed and two fixed parts 35 with 3 edges vicinities by above-mentioned first installation unit 5.Detailed description for the first installation unit 5 will be omitted.
Meanwhile, the fixed part 35 that the center among multiple fixed part 35 is settled is connected by the second installation unit 5, and wherein, the second installation unit 5 is different from the first installation unit 5.That is, the second installation unit 5 is connected with the middle body of the second direction of principal axis (Y-coordinate direction of principal axis) at band 3.
Unit 4 is maintained for tension force, the part fixed band 3 exactly of the second installation unit 5 is installed, thus maintain the tension force of band 3.That is, tension force maintains one end of unit 4 leash 3, the other end of the second installation unit 5 fixed band 3, thus maintains the tension force of band 3.
Second installation unit 5 can comprise limiting unit 52, and this limiting unit 52 is for oppressing the fixed part 35 with fixed band 3.That is, limiting unit 52 is set to the motion limiting fixed part 35.If inserted by the second installation unit 5 and be connected to the groove of the 3rd framing component 23, limiting unit 52 oppresses fixed part 35, and fixed part 35 is stably connected with the 3rd framing component 23 and the second installation unit 5.
In the above description of embodiments of the invention, there is multiple second installation unit 5, but and nonessential.One or more second installation unit 5 can be set.
According to the present invention, the first installation unit 5 can be omitted, and fix fixed part 35 by use second installation unit 5.
With reference to Fig. 3, substrate tray 1 of the present invention can comprise the multiple prodgers 6 for elevation base plate pallet 1.Multiple prodger 6 can be formed in the first framing component 21 and the second framing component 22.
Each first framing component 21 and the second framing component 22 can be provided with connecting groove 25, insert regularly for prodger 6.Connecting groove 25 can be formed by a part for the upper surface removing the first framing component 21 and the second framing component 22.
Prodger 6 is inserted in connecting groove 25, and is connected with the second framing component 22 with the first framing component 21.Prodger 6 is given prominence to towards the center of the substrate tray 1 relative to the second direction of principal axis (Y-coordinate direction of principal axis).Prodger 6 is connected with the first framing component 21 and the second framing component 22.Prodger 6 is inserted in connecting groove 25, and by using the extra fixture 62 arranged to be connected with connecting groove 25.
In the accompanying drawings, the prodger 6 be arranged in the first framing component 21 is two with the quantity of connector 25, and the prodger 6 be arranged in the second framing component 22 is two with the quantity of connector 25, thus arranges four.But prodger 6 can be greater than or less than above-mentioned quantity with the quantity of connector 25.
Hereinafter, the substrate processing apparatus described in embodiments of the invention will be described with reference to the drawings.
With reference to Figure 17 and Figure 18, substrate processing apparatus 100 of the present invention can comprise process chamber 110 and bearing apparatus 120.In addition, substrate processing apparatus 100 of the present invention may further include chamber cap 130, pallet transfer device 140 and gas distributing device 160.
Process chamber 110 processes space for substrate process provides, such as, and thin film deposition processes, etch process, cleaning etc.Process chamber 110 can comprise: gate valve (not shown), and this gate valve is set to be loaded into by substrate tray 1 in this process space or by substrate tray 1 and unloads from this process space; And blast pipe 150, this blast pipe 150 is for from this process space combustion gas and byproduct.
Chamber cap 130 is arranged on process chamber 110, that is, and chamber cap 130 Mulching treatment room 110, thus support gas distributing device 160.There is insulator 315 between the upside of process chamber 110 and chamber cap 130, thus chamber cap 130 and process chamber 110 are electrically insulated from each other.
Bearing apparatus 120 is supported by the lifting shaft 123 of bottom surface, breakthrough process room 110.In this case, lifting shaft 123 is surrounded by bellows 124.Along with the driving of lifting shaft drive unit (not shown), the substrate tray 1 supported by pallet transfer device 140 is increased to process position, as shown in figure 19, or, along with the substrate tray 1 being placed in process position is moved downward to tray loading/discharge location, substrate tray 1 is placed on the tray transporting roller 141 of pallet transfer device 140, as shown in figure 18.
If bearing apparatus 120 moves down along with the driving of lifting shaft drive unit, by being arranged on the multiple prodgers 119 in substrate tray 1, bearing apparatus 120 drives substrate tray 1 to move up.In this case, each band 3 of substrate tray 1 is placed on the upper surface of bearing apparatus 120.
Bearing apparatus 120 heat be loaded into substrate tray 1 substrate (S) to the temperature being suitable for processing substrate.In order to reach this object, bearing apparatus 120 may further include the heater 121 be arranged on wherein.
Heater 121 heats bearing apparatus 120 to predetermined temperature, heat whereby be loaded into substrate tray 1 multiple substrates (S) to the temperature being suitable for processing substrate.Heater 121 can comprise resistance heater, hot wire heater (hot wire heater) or lamp heater.Correspondingly, the multiple substrates (S) being loaded into substrate tray 1 by the temperature of bearing apparatus 120 by aliging are heated to be suitable for the temperature of processing substrate.
Pallet transfer device 140 is set to the gate valve of process chamber 110 contiguous, thus substrate tray 1 is loaded into process space or is unloaded from process space by substrate tray 1.In order to reach this object, pallet transfer device 140 can comprise the multiple live-roller (not shown) for supporting substrate pallet 1 and transfer base substrate pallet 1.In addition, pallet feeding mechanism described according to a further embodiment of the invention can comprise for supporting the conveyer belt (not shown) with transfer base substrate pallet 1, and the multiple live-roller (not shown) for making conveyer belt (not shown) rotate.
Pallet transfer device 140 can comprise multiple tray transporting roller 141, and multiple tray transporting roller 141 is arranged on two sidewalls corresponding to the process chamber 110 of the gate valve of preparation in process chamber 110.
Under the driving of pallet feeding mechanism, each tray transporting roller 141 supports the substrate tray being loaded into process space by gate valve, and after processing substrate completes, the substrate tray 1 of support, under the driving of roll driving apparatus (not shown), is loaded into pallet feeding mechanism, another process chamber or load locking room by each tray transporting roller 141.
In the face of the gas distributing device 160 of bearing apparatus 120 is arranged at below chamber cap 130, be connected with the feed tube 161 penetrating chamber cap 130.The gas supplied from extraneous gas feeding mechanism (not shown) (such as, process gas, clean air or the source gas for depositing) is spread to bearing apparatus 120 by gas distributing device 160.In order to reach this object, gas distributing device 160 can comprise: gas diffusion space (not shown), and this gas diffusion space is for spreading the gas supplied from feed tube 161; And multiple gas distributing hole holes (not shown), multiple gas distributing hole hole is communicated with gas diffusion space, so that equably by the whole region of gas dispense to bearing apparatus 120.
Simultaneously, if substrate processing apparatus carries out processing substrate by the plasma being used in the formation of process space, gas distributing device 160 can be electrically connected with the plasma electrically source supply device (not shown) in outer setting, or is electrically connected with this plasma power supply device by feed tube 161.In this case, gas distributing device 160 serves as plasma electrode.
Substrate processing apparatus of the present invention may further include cover framework 170, and this cover framework 170 is arranged on the madial wall of process chamber 110, so that the top edge of covered substrate pallet 1.
Cover framework 170 covers the top edge of the substrate tray 1 being promoted to process position, thus prevents from producing collection carbon in the substrate tray 1 for processing substrate.Cover framework 170 can be formed by insulating material, such as, and ceramic material or comprise the nonmetallic materials of ceramic material.
Below by the description substrate processing method using same utilizing substrate processing apparatus of the present invention.
First, as shown in figure 17, by substrate tray 1 be aligned the inside that the multiple substrates (S) be loaded on multiple band 3 are loaded into process chamber 110, be then placed on the tray transporting roller 141 of pallet transfer device 140.
Then, as shown in figure 18, by driving lifting shaft drive unit to raise bearing apparatus 120, whereby the multiple substrates (S) being loaded onto substrate tray 1 are placed in process position.
During rising bearing apparatus 120 or after each substrate (S) arrival process position, the heater 121 that bearing apparatus 120 inside is arranged is driven, to heat bearing apparatus 120, whereby the multiple substrates (S) be loaded onto on substrate tray 1 are heated to the temperature being suitable for processing substrate.
During the process of heated substrates (S), all bands 3 of substrate tray 1 can be made to expand by the temperature of bearing apparatus 120 or the temperature in process space, the length of each band 3 can be increased whereby.Therefore, under the elastic force of elastic component 42, sliding support 41 can slide towards the direction away from the 3rd framing component 23, whereby can towards the direction traction connecting portion 34 away from the 3rd framing component 23.Correspondingly, under the elastic force of elastic component 42, maintain the tension force in each band 3 consistently by the slip of sliding support 133, make it possible to accomplish to prevent each band 3 owing to causing with the thermal expansion of 3 from sinking, thus prevent defective workmanship.
Then, when multiple substrate (S) being placed in process position, dispensing a gas onto each substrate (S) by gas distributing device 160, thus carrying out processing substrate.Processing substrate can be the technique forming plasma, namely formed the technique of plasma by the space from gas distributing device 160 supply gas and supplying plasma power supply between substrate (S) and gas distributing device 160, but be not limited to the technique forming plasma.Processing substrate can be depositing operation, etch process or cleaning.
After processing substrate completes, bearing apparatus 120 moves down, and is placed on tray transporting roller 141 by the substrate tray 1 be placed on bearing apparatus 120 whereby.
Then, under the driving of tray transporting roller 141, substrate tray 1 is unloaded down to outside from process chamber 110.In this case, each band 3 of the substrate tray 1 unloaded from process chamber 110 shrinks due to the ambient temperature of process chamber 110 outside, under thermal contraction whereby in each band 3 and the compression of elastic component 42, the sliding support 41 be connected with each band 3 slides towards the direction being adjacent to the 3rd framing component 23.
To one skilled in the art, without departing from the spirit and scope of the present invention, can carry out various modifications and variations, this point is apparent.Therefore, the present invention covers and falls into accessory claim and the amendment in the scope of its equivalent and modification.

Claims (18)

1. a substrate tray, comprising:
Multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And
Support frame, is being connected with described being with perpendicular on described first axial second direction of principal axis,
Wherein, relative to described second direction of principal axis, the length of each of described band is greater than the length of described substrate.
2. substrate tray as claimed in claim 1, wherein, described band is arranged with fixed intervals on described second direction of principal axis, and is connected with described support frame.
3. substrate tray as claimed in claim 1, comprise heat transfer part further, this heat transfer part penetrates described band heat to be delivered to the described substrate supported on the belt from the downside of described band.
4. substrate tray as claimed in claim 3, wherein, described heat transfer part is formed with preliminary dimension, and this preliminary dimension is relatively less than the size of described substrate, stably to support the described described substrate brought, described multiple heat transfer part is arranged in described band with fixed intervals.
5. substrate tray as claimed in claim 1, wherein, described band comprises: stayed surface, for supporting described substrate; And from multiple protuberances that described stayed surface is given prominence to, and described multiple protuberance contacts with each limit of the described substrate supported on described stayed surface.
6. substrate tray as claimed in claim 1, wherein, described band comprises: stayed surface, for supporting substrate described in each; And from the outstanding multiple protuberances of described stayed surface, and described multiple protuberance is provided at predetermined intervals along each limit of the described substrate that described stayed surface supports.
7. the substrate tray as described in claim 5 or 6, wherein, described stayed surface and described protuberance form as one.
8. the substrate tray as described in claim 5 or 6, wherein, described protuberance is bent to form by making described stayed surface.
9. substrate tray as claimed in claim 1, comprises multiple tension force further and maintains unit, for maintaining the tension force in each described band,
Wherein, each described band comprises the connecting portion maintaining unit with described tension force and be connected, and
Wherein, each described tension force maintains unit and comprises the sliding support be connected with described connecting portion, and is placed in the elastic component between described sliding support and described support frame.
10. substrate tray as claimed in claim 9, wherein, each described band comprises multiple described connecting portion, and each described sliding support is connected with multiple described connecting portion.
11. substrate trays as claimed in claim 9, comprise at least one installation unit further, are with for installing described in each on described support frame,
Wherein, the fixed part that each band comprises the stayed surface for supporting described substrate and is connected with described installation unit, and described connecting portion and described fixed part are arranged on relative on described surface-supported relative both sides.
12. substrate trays as claimed in claim 1, comprise at least one installation unit further, are with for installing described in each on described support frame,
Wherein, each band comprises the fixed part be connected with described installation unit, and described installation unit comprises the acceptance division for receiving described fixed part, and wherein, the size of described acceptance division is greater than the size of described fixed part.
13. substrate trays as claimed in claim 1, comprise at least one installation unit further, are with for installing described in each on described support frame,
Wherein, each band comprises the fixed part be connected with described installation unit, and described installation unit comprises the limiting unit for limiting the motion of described fixed part.
14. 1 kinds of substrate trays, comprising:
Multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And
Support frame, is being connected with described multiple being with perpendicular on described first axial second direction of principal axis,
Wherein, relative to described second direction of principal axis, the length of each of described multiple band equals the length of described substrate.
15. 1 kinds of substrate processing apparatus, comprising:
Process chamber, for providing process space;
Bearing apparatus, described bearing apparatus is arranged in described process chamber movably; And
Substrate tray, described substrate tray is loaded onto described process space and is supported by described bearing apparatus,
Wherein, described substrate tray comprises:
Multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And
Support frame, is being connected with described multiple being with perpendicular on described first axial second direction of principal axis,
Wherein, relative to described second direction of principal axis, the length of each of described multiple band is greater than the length of described substrate.
16. 1 kinds of substrate processing apparatus, comprising:
Process chamber, for providing process space;
Bearing apparatus, described bearing apparatus is arranged in described process chamber movably; And
Substrate tray, described substrate tray is loaded onto described process space and is supported by described bearing apparatus,
Wherein, described substrate tray comprises:
Multiple band, for being supported on multiple substrates that the first direction of principal axis is arranged; And
Support frame, is being connected with described multiple being with perpendicular on described first axial second direction of principal axis,
Wherein, relative to described second direction of principal axis, the length of each of described multiple band equals the length of described substrate.
17. substrate processing apparatus as described in claim 15 or 16, wherein, described substrate tray is included in the multiple prodgers outstanding to described band in described support frame, and described multiple prodger is moved up and down described substrate tray by described bearing apparatus.
18. substrate processing apparatus as described in claim 15 or 16, wherein, described substrate tray comprises transfer part, and described transfer part penetrates described band the heat sent from described bearing apparatus to be delivered to the described substrate supported on the belt.
CN201380058399.2A 2012-11-07 2013-11-05 Substrate tray and the substrate processing apparatus including the substrate tray Active CN104937707B (en)

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CN110190018A (en) * 2019-07-01 2019-08-30 深圳市石金科技股份有限公司 A kind of spliced frame for bearing silicon chip
CN111684289A (en) * 2018-02-09 2020-09-18 周星工程股份有限公司 Power interface
CN111971786A (en) * 2018-04-03 2020-11-20 周星工程股份有限公司 Apparatus for processing substrate
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CN114318278A (en) * 2021-12-24 2022-04-12 南通玖方新材料科技有限公司 Silicon chip bearing device with adjustable flatness
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CN111684289A (en) * 2018-02-09 2020-09-18 周星工程股份有限公司 Power interface
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CN114318278A (en) * 2021-12-24 2022-04-12 南通玖方新材料科技有限公司 Silicon chip bearing device with adjustable flatness

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US20150279619A1 (en) 2015-10-01
TW201426902A (en) 2014-07-01
CN104937707B (en) 2017-07-28
WO2014073831A1 (en) 2014-05-15
KR20140058902A (en) 2014-05-15
TWI600109B (en) 2017-09-21
KR101698536B1 (en) 2017-01-20

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