CN104936116A - Integrated differential silicon capacitor microphone - Google Patents
Integrated differential silicon capacitor microphone Download PDFInfo
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- CN104936116A CN104936116A CN201510294025.1A CN201510294025A CN104936116A CN 104936116 A CN104936116 A CN 104936116A CN 201510294025 A CN201510294025 A CN 201510294025A CN 104936116 A CN104936116 A CN 104936116A
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Abstract
The invention provides an integrated differential silicon capacitor microphone employing two or four differential MEMS sensitive elements which are in parallel connection and share one sound cavity. The microphone comprises a housing and a substrate, which are combined together. Moreover, one of the housing and the substrate is provided with a sound incoming hole. The microphone also comprises the two or four differential MEMS sensitive elements which are matched with each other; an integrated circuit; and a sound cavity. The integrated circuit is used for the buffering/amplification and output of an electric signal which is formed by the conversion of a sound wave through the sound incoming hole, the sound cavity and the differential MEMS sensitive elements. The electrical arrangement and connection mode between the integrated circuit and the differential MEMS sensitive elements are in axial symmetry or mirror symmetry relation. Through the means provided by the invention, the microphone improves the linearity and the maximum sound pressure level.
Description
Technical field
The present invention relates to a kind of integrated difference silicon capacitor microphone and encapsulation scheme thereof.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) microphone or claim silicon microphone because its volume is little, be suitable for the advantages such as surface mount and be widely used in the sound collection of tablet electronic device, such as: mobile phone, MP3, recording pen and monitoring equipment etc.For meeting the growing material and cultural needs of the people, the index such as volume, cost, signal to noise ratio of silicon microphone is also constantly optimizing raising.In relevant optimisation technique scheme, existing numerous effort, attempt the mode by together being used by multiple silicon microphone difference MEMS senser, signal to noise ratio index is improved under existing fabrication process condition, also there is a lot of scheme, attempting the technical indicator such as the linearity, maximum sound pressure level improving silicon capacitor microphone by making difference MEMS sensitive structure.The present invention mainly discusses the silicon capacitor microphone of difference.
Traditional difference MEMS senser is generally divided into three-decker, wherein two-layer relatively fixing up and down, and intermediate layer is movable.Existing research, as Chinese patent CN102457801, Chinese patent CN103563399 etc., all to be prepared etc. the structural design of difference MEMS senser, technique and has been done deep research.On the other hand, the circuit arrangement of existing US Patent No. 8644529 pairs of difference silicon capacitor microphones has corresponding work, also has US Patent No. 6285769 to the microphone being made Closed loop operation by force feedback.
For the silicon capacitor microphone of difference, obviously because its MEMS senser is generally divided into three-decker, two-layer (backplane and vibrating diaphragm) generally can be divided into introduce more complicated design concept and preparation technology than the MEMS senser of conventional silicon capacitor microphone, correspondingly can be subject to some restrictions in cost, yield, product versatility, so correspondingly just need difference microphone to be significantly higher than regular microphones in the technical indicator such as maximum sound pressure level, the linearity.In other words, its follow-up encapsulation and circuit need corresponding measure, to reach the technique effect that the good technical indicator of effect improves.
Summary of the invention
The invention provides by 2 or 4 coupling difference MEMS sensitive structures walk abreast use ensure simultaneously each sound wave input until changed into the prestage acoustics of transaudient path for each difference MEMS senser in silicon capacitor microphone of the signal of telecommunication by difference MEMS senser, mechanics, the high linearity silicon capacitor microphone of electricity full symmetric, arrange from difference MEMS senser, integrated circuit is arranged, lead-in wire and encapsulation are arranged, each link that the process of subsequent conditioning circuit system such as to arrange at the silicon microphone is set about, improve the efficiency of mutual data fusion between each difference MEMS sensitive structure of integrated silicon capacitor microphone, the overall technology index of further raising silicon capacitor microphone, improve product competitiveness.
For solving the problem, the technical solution used in the present invention is:
An integrated silicon capacitor microphone, comprising: the shell combined and substrate, and one of them is provided with sound inlet; 2 or 4 difference MEMS sensers mutually mated; Integrated circuit; The operatic tunes, wherein, described integrated circuit is used for cushioning/amplifying the signal of telecommunication that sound wave is converted into each described difference MEMS senser through described sound inlet, the described operatic tunes and export, and the electric arrangement between described integrated circuit and each difference MEMS senser and connected mode are axial symmetry or specular relation.By difference MEMS senser is arranged to axial symmetry or mirror, ensure the symmetry in the prestage acoustics between circuit chip to each difference MEMS senser, mechanics, electricity.
Preferably, the chip form of described MEMS senser is square, and quantity is 4, and 4 difference MEMS sensers are 2 take advantage of 2 rectanglar arrangements, are geometrically becoming specular relation along mutual alignment split.For 2 MEMS sensers, the performance of symmetric many Data Integrations obviously on its shape, position improves, and is all worse than 4 MEMS sensers.And more than the MEMS senser of 4, the symmetry in its plane and spatial-acoustic, mechanics, electricity cannot ensure.
Preferably, it is consistent to each MEMS senser with the operatic tunes that sound wave enters the transaudient path after sound inlet, and integrated circuit and MEMS senser to make with the placement-and-routing in substrate at shell, and each road electric signal is consistent to be transmitted, wherein, described transaudient path is the path formed to each described difference MEMS senser from described sound inlet, the described operatic tunes.This is the technological means arranged by packaging body, ensures the symmetry in the prestage acoustics between circuit chip to each difference MEMS senser, mechanics, electricity.
Preferably, described integrated circuit is a kind of chip simultaneously providing the positive negative bias voltage of symmetry.This arranges angle from circuit chip, provides electricity symmetry preferably a kind of technological means.
Preferably, described integrated circuit is two kinds of chips providing positive negative bias voltage respectively symmetrically.This arranges angle from circuit chip, provides electricity symmetry preferably a kind of technological means.
Preferably, the way of output of described silicon capacitor microphone is that difference both-end exports.Export with both-end, this is the way of output of preferably difference silicon capacitor microphone.
Preferably, realize electrostatic force feedback by described integrated circuit when described silicon capacitor microphone works, thus make MEMS senser Closed loop operation.This arranges technological means angle from Circuits System, improves the mode of the maximum sound pressure level of silicon capacitor microphone work.Owing to improve acoustics, mechanics, the electricity symmetry of difference MEMS senser prestage, the error of Closed loop operation model reduces, and precision improves.
A kind of integrated silicon capacitance microphone that use 2 or the parallel connection of 4 difference MEMS sensers, that share the operatic tunes of proposition of the present invention, difference MEMS senser is combined with the encapsulating structure such as substrate, shell, constitutes the operatic tunes of transaudient path for each difference MEMS senser full symmetric; Especially make MEMS combine with circuit interface and encapsulating structure to the lead-in wire of integrated circuit, preferably ensure that its symmetry, the linearity and less systematic error from Circuits System prestage.Therefore, although for ensureing symmetry, the present invention is only suitable for 2 or 4 difference MEMS sensers and walks abreast the occasion used, and can obtain the preferably linearity and maximum sound pressure level technical indicator, the raising competitiveness of product in market.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the inventive microphone structure vertical section schematic diagram of sound inlet at outer casing upper cover;
Fig. 2 is the inventive microphone structure vertical section schematic diagram of sound inlet at shell bottom plate;
Fig. 3 is integrated circuit (a kind of chip provides the positive negative bias voltage of the coupling simultaneously) layout on substrate and the schematic top plan view of lead-in wire that 2 difference MEMS sensers and 2 pieces coordinate MEMS senser;
Fig. 4 is the schematic top plan view of 4 difference MEMS sensers of the preferred embodiment of the present invention and integrated circuit (a kind of chip provides the positive negative bias voltage of the coupling simultaneously) layout on substrate of 4 cooperation MEMS sensers;
Fig. 5 is the front end electrical model schematic diagram of 2 or 4 difference MEMS sensers and the integrated circuit (a kind of chip provides the positive negative bias voltage of coupling simultaneously) coordinating MEMS senser;
Fig. 6 is integrated circuit (two kinds of matching chip the provide positive negative bias voltage respectively) layout on substrate and the schematic top plan view of lead-in wire that 2 difference MEMS sensers and 2 pieces coordinate MEMS senser;
Fig. 7 is the schematic top plan view that 4 difference MEMS sensers and 4 coordinate integrated circuit (two kinds of matching chip the provide positive negative bias voltage respectively) layout on substrate of MEMS senser;
Fig. 8 is the front end electrical model schematic diagram of 2 or 4 difference MEMS sensers and the integrated circuit (two kinds of matching chip provide positive negative bias voltage respectively) coordinating MEMS senser;
Fig. 9 is the Single-end output circuit diagram that 2 difference MEMS sensers and integrated circuit coordinate;
Figure 10 is the both-end output circuit schematic diagram that 2 difference MEMS sensers and integrated circuit coordinate;
Figure 11 is the both-end output circuit schematic diagram that 4 difference MEMS sensers and integrated circuit coordinate.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not paying the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The present invention is mainly used in a kind of integrated difference silicon capacitor microphone.Although the effort that prior art is carried out at the links of difference silicon capacitor microphone is fruitful, still lack corresponding system combination and interface work for the treatment of, when microphone overall work, these links are essential.The present invention is by using parallel for the difference MEMS sensitive structure of 2 or 4 couplings, ensure that the input of each sound wave is until change the prestage acoustics of transaudient path for each difference MEMS senser in silicon capacitor microphone of the signal of telecommunication into by difference MEMS senser simultaneously, mechanics, the technical scheme of electricity full symmetric, arrange from difference MEMS senser, integrated circuit is arranged, lead-in wire and encapsulation are arranged, each link that the process of subsequent conditioning circuit system such as to arrange at the silicon microphone is set about, improve the efficiency of mutual data fusion between each difference MEMS sensitive structure of integrated silicon capacitor microphone, thus reach the linearity improving silicon capacitor microphone further, the overall technology indexs such as maximum sound pressure level, improve product competitiveness.Below in conjunction with concrete drawings and Examples, the invention will be further described.
Fig. 1 and Fig. 2 is the microphone structure vertical section schematic diagram of sound inlet 101 of the present invention on outer casing upper cover 102 or substrate 103 respectively.As shown in FIG., can according to the transaudient needs of reality, arrange backing plate 202 and the connected space 201 of the operatic tunes 302 being communicated with MEMS sensitive structure 301, integrated circuit (IC) chip 401,402 (optionally can increase integrated circuit (IC) chip 403,404) does mirror image or axial symmetry arrangement around MEMS sensitive structure 301.It is worth emphasizing that, independently MEMS sensitive structure is symmetrical for each, from MEMS sensitive structure 301 to the relative position of each integrated circuit (IC) chip 401,402 (optionally can increase integrated circuit (IC) chip 403,404), lead-in wire specular or axial symmetry, and chip is symmetrical in electric meaning relative to encapsulating housing.
Fig. 3 is integrated circuit (a kind of chip provides the positive negative bias voltage of the coupling simultaneously) layout on substrate and the schematic top plan view of lead-in wire that 2 difference MEMS sensers and 2 pieces coordinate MEMS senser.In figure, heavy line represents lead-in wire, and I represents the signal transmission electrode (pin) of MEMS senser and integrated circuit ,+and-represent positive negative bias voltage electrode (pin) respectively.Each MEMS senser comprises three, upper, middle and lower electrode (pin), and U represents top electrode, and M represents target, and D represents bottom electrode.Electric capacity between top electrode and target is denoted as Cu (the capacitance variations value being subject to encouraging from the unit sound pressure of below is dCu), electric capacity between bottom electrode and target is denoted as Cd (the capacitance variations value being subject to encouraging from the unit sound pressure of below is-dCd), the parasitic capacitance that positive bias voltage contact conductor in Fig. 3 and target (signal transmission electrode) lead-in wire are introduced is denoted as Cp (obviously because chip position and lead-in wire are axial symmetry arrangement, the Cp of the two-way front stage circuits of Fig. 3 is consistent), the parasitic capacitance that negative bias voltage contact conductor in Fig. 3 and target (signal transmission electrode) lead-in wire are introduced is denoted as Cn.Like this, if think the electric capacity of integrated circuit to voltage transitions link for completely linear, the differentiated information of this two paths of signals is 2* (Cu-Cd)+2* (dCu+dCd).Like this, the matching of Cu and Cd determines the DC point of circuit, and parasitic capacitance Cp and Cn is eliminated by by difference.
Fig. 4 is the schematic top plan view of 4 difference MEMS sensers of the preferred embodiment of the present invention and integrated circuit (a kind of chip provides the positive negative bias voltage of the coupling simultaneously) layout on substrate of 4 cooperation MEMS sensers.Be with the differentiation part of Fig. 3, for 2 MEMS sensers, the performance of symmetric many Data Integrations obviously on its shape, position improves, and is all worse than 4 MEMS sensers.And more than the MEMS senser of 4, the symmetry in its plane and spatial-acoustic, mechanics, electricity cannot ensure.Due to 4 road signal data syncretizing effects, symmetry, can closed loop and a kind of low cost of integrated circuit (IC) chip only need be set, the embodiment shown in Fig. 4 is the preferred embodiment of the present invention.
Fig. 5 is the front end electrical model schematic diagram of 2 or 4 difference MEMS sensers and the integrated circuit (a kind of chip provides the positive negative bias voltage of coupling simultaneously) coordinating MEMS senser.Due to the impact of the difference and fabrication error that arrange structure when actual process realizes, Cu and Cd (having influence on dCu and dCd equally), Cp and Cn all can not full symmetric, and these parameters are all be present in prime electrical model, the linearity on microphone, maximum sound pressure level and closed loop model accuracy are produced directly impact by its symmetry.This figure, by the tool of these parameters in circuit model is showed to scheme to describe, makes the specific implementation process eliminating parasitic capacitance in the present invention be more convenient for understanding.
Fig. 6 is integrated circuit (two kinds of matching chip the provide positive negative bias voltage respectively) layout on substrate and the schematic top plan view of lead-in wire that 2 difference MEMS sensers and 2 pieces coordinate MEMS senser.Same Fig. 3, this figure is with the differentiation part of Fig. 3, respectively the target of two MEMS sensers is accessed positive and negative bias voltage electrode, and by its upper and lower electrode access integrated circuit corresponding signal transmission electrode I1, I2, its parasitic capacitance is also correspondingly denoted as C1, C2, in addition, the difference of technical scheme shown in the present embodiment technical scheme and Fig. 3 is that the present embodiment uses chip specular to arrange, and the embodiment of Fig. 3 uses the arrangement of chip axial symmetry.Equally, if think the electric capacity of integrated circuit to voltage transitions link for completely linear, the differentiated information of this two paths of signals is 2* (Cu-Cd)+2* (dCu+dCd).Like this, the matching of Cu and Cd determines the DC point of circuit, and parasitic capacitance C1 and C2 is eliminated by by difference.
Fig. 7 is the schematic top plan view that 4 difference MEMS sensers and 4 coordinate integrated circuit (two kinds of matching chip the provide positive negative bias voltage respectively) layout on substrate of MEMS senser.Similar in Fig. 3 in Fig. 6 and Fig. 4 of this figure, wherein this figure embodiment adopts the arrangement of chip specular, and Fig. 4 embodiment adopts the arrangement of chip axial symmetry.
Fig. 8 is the front end electrical model schematic diagram of 2 or 4 difference MEMS sensers and the integrated circuit (two kinds of matching chip provide positive negative bias voltage respectively) coordinating MEMS senser.Identical in Fig. 4, Fig. 3 in Fig. 6, Fig. 7 and Fig. 5 of this figure.
Fig. 9 is the Single-end output circuit diagram that 2 difference MEMS sensers and integrated circuit coordinate.Obviously, the electrical interface requirements exported according to microphone, can separately increase a difference function in circuit rear end, by Single-end output after two paths of signals difference.It is worth mentioning that, because the difference function embodiment increased is in rear end, significant impact can't be produced on technical indicators such as the linearities of microphone.
Figure 10 is the both-end output circuit schematic diagram that 2 difference MEMS sensers and integrated circuit coordinate.Because electric capacity and capacitance gap are inversely proportional to, when the target of obvious difference MEMS senser moves and changes capacitance gap between upper and lower electrode, by the non-linear deviation of difference reduction from amount of exercise to capacitance, but cannot can eliminate completely.When using the embodiment of Fig. 3 and Fig. 4, can as required by this two-way respectively by row difference again after electrostatic force feedback closed loop, concrete methods of realizing is upper by difference MEMS senser, bottom electrode applies a feedback voltage, superpose respectively with former positive negative bias voltage, make, the electrostatic force difference balance acoustics input pressure that bottom electrode produces, thus make middle plate be operated in equilbrium position always, therefore capacitance gap is constant, thus the motion of elimination open loop microphone middle plate changes the non-linear effects from amount of exercise to capacitance during transmission that capacitance gap brings.
Figure 11 is the both-end output circuit schematic diagram that 4 difference MEMS sensers and integrated circuit coordinate.Wherein identical signal carries out suing for peace or line and difference more afterwards between two.Similar with the technical scheme of Fig. 9 and Figure 10, can as Fig. 9 circuit rear end separately increase a difference function and by two paths of signals difference after Single-end output, also can as Figure 10 Ban Jiangmei road signal carry out closed loop after export again.
In addition, the term " just " in specification of the present invention and claims, " bearing ", " on ", D score, " left side ", " right side " etc. (if existence) is for illustration of property object and not necessarily for describing permanent relative position.Be understandable that the term so used can exchange in the appropriate case, make embodiments of the invention as herein described can at the enterprising line operate in other directions being such as different from above-mentioned or described direction herein.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and can carry out many amendments, change or equivalence, but they all will fall within the scope of protection of the present invention within the spirit and scope of claim restriction to it.
Claims (7)
1. an integrated silicon capacitor microphone, is characterized in that, comprising: the shell combined and substrate, and described shell and described substrate one of them be provided with sound inlet, the difference MEMS sensers of 2 or 4 coupling mutually, integrated circuit and the operatic tunes, wherein:
Described integrated circuit is used for cushioning/amplifying the signal of telecommunication that sound wave is converted into each described difference MEMS senser through described sound inlet, the described operatic tunes and export, and the electric arrangement between described integrated circuit and each described difference MEMS senser and connected mode are axial symmetry or specular relation.
2. integrated silicon capacitor microphone according to claim 1, it is characterized in that, the chip form of described difference MEMS senser is square, quantity is 4, and 4 described difference MEMS sensers are 2 take advantage of 2 rectanglar arrangements, are geometrically becoming specular relation along mutual alignment split.
3. integrated silicon capacitor microphone according to claim 1, it is characterized in that, it is consistent to difference MEMS senser described in each with the described operatic tunes that sound wave enters the transaudient path after described sound inlet, and described integrated circuit and each described difference MEMS senser to make with the placement-and-routing in described substrate at described shell, and each road electric signal is consistent to be transmitted, wherein, described transaudient path is the path formed to each described difference MEMS senser from described sound inlet, the described operatic tunes.
4. integrated silicon capacitor microphone according to claim 1, is characterized in that, described integrated circuit is a kind of chip simultaneously providing the positive negative bias voltage of symmetry.
5. integrated silicon capacitor microphone according to claim 1, is characterized in that, described integrated circuit provides the chip of positive negative bias voltage respectively symmetrically for two kinds.
6. integrated silicon capacitor microphone according to claim 1, is characterized in that, the way of output of described silicon capacitor microphone is that difference both-end exports.
7. integrated silicon capacitor microphone according to claim 1, is characterized in that, realizes electrostatic force feedback, thus make each described difference MEMS senser Closed loop operation during described silicon capacitor microphone work by described integrated circuit.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109565635A (en) * | 2016-07-11 | 2019-04-02 | 美商楼氏电子有限公司 | Heading signal difference MEMS microphone |
| CN110677793A (en) * | 2019-02-19 | 2020-01-10 | 美律电子(深圳)有限公司 | Microphone packaging structure |
| CN113395645A (en) * | 2021-06-18 | 2021-09-14 | 杭州士兰微电子股份有限公司 | MEMS system |
| CN113423050A (en) * | 2021-06-18 | 2021-09-21 | 杭州士兰微电子股份有限公司 | MEMS system |
| CN113784265A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784266A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2021248929A1 (en) * | 2020-06-09 | 2021-12-16 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic device |
| WO2022057198A1 (en) * | 2020-09-17 | 2022-03-24 | 通用微(深圳)科技有限公司 | Silicon based microphone apparatus and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070047746A1 (en) * | 2005-08-23 | 2007-03-01 | Analog Devices, Inc. | Multi-Microphone System |
| CN102187685A (en) * | 2008-10-14 | 2011-09-14 | 美商楼氏电子有限公司 | Microphone having multiple transducer elements |
| CN102595295A (en) * | 2012-03-06 | 2012-07-18 | 歌尔声学股份有限公司 | Micro-electro-mechanical-system (MEMS) microphone |
| CN102740206A (en) * | 2011-04-02 | 2012-10-17 | 哈曼国际工业有限公司 | Dual cell mems assembly |
| CN202679624U (en) * | 2012-05-25 | 2013-01-16 | 歌尔声学股份有限公司 | Mems microphone |
| CN104602171A (en) * | 2013-10-30 | 2015-05-06 | 北京卓锐微技术有限公司 | Integrated silicon condenser microphone |
-
2015
- 2015-06-01 CN CN201510294025.1A patent/CN104936116B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070047746A1 (en) * | 2005-08-23 | 2007-03-01 | Analog Devices, Inc. | Multi-Microphone System |
| CN102187685A (en) * | 2008-10-14 | 2011-09-14 | 美商楼氏电子有限公司 | Microphone having multiple transducer elements |
| CN102740206A (en) * | 2011-04-02 | 2012-10-17 | 哈曼国际工业有限公司 | Dual cell mems assembly |
| CN102595295A (en) * | 2012-03-06 | 2012-07-18 | 歌尔声学股份有限公司 | Micro-electro-mechanical-system (MEMS) microphone |
| CN202679624U (en) * | 2012-05-25 | 2013-01-16 | 歌尔声学股份有限公司 | Mems microphone |
| CN104602171A (en) * | 2013-10-30 | 2015-05-06 | 北京卓锐微技术有限公司 | Integrated silicon condenser microphone |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109565635A (en) * | 2016-07-11 | 2019-04-02 | 美商楼氏电子有限公司 | Heading signal difference MEMS microphone |
| CN109565635B (en) * | 2016-07-11 | 2020-12-04 | 美商楼氏电子有限公司 | Split signal differential MEMS microphone |
| CN110677793A (en) * | 2019-02-19 | 2020-01-10 | 美律电子(深圳)有限公司 | Microphone packaging structure |
| CN110677793B (en) * | 2019-02-19 | 2021-09-10 | 美律电子(深圳)有限公司 | Microphone packaging structure |
| CN113784265A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| CN113784266A (en) * | 2020-06-09 | 2021-12-10 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2021248929A1 (en) * | 2020-06-09 | 2021-12-16 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic device |
| CN113784265B (en) * | 2020-06-09 | 2022-06-14 | 通用微(深圳)科技有限公司 | Silicon-based microphone device and electronic equipment |
| WO2022057198A1 (en) * | 2020-09-17 | 2022-03-24 | 通用微(深圳)科技有限公司 | Silicon based microphone apparatus and electronic device |
| CN113395645A (en) * | 2021-06-18 | 2021-09-14 | 杭州士兰微电子股份有限公司 | MEMS system |
| CN113423050A (en) * | 2021-06-18 | 2021-09-21 | 杭州士兰微电子股份有限公司 | MEMS system |
| CN113423050B (en) * | 2021-06-18 | 2024-03-08 | 杭州士兰微电子股份有限公司 | MEMS system |
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Address after: 261200 No. 68 Fengshan Road, Fangzi District, Weifang City, Shandong Province Patentee after: Gongda Electroacoustics Co., Ltd. Address before: 261206 Fengshan Road, Fangzi District, Weifang, Shandong Province, No. 68 Patentee before: Shandong Gettop Acoustic Co.,Ltd. |
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