CN104764903A - Silicon capacitor type accelerometer of mechanical modulation - Google Patents

Silicon capacitor type accelerometer of mechanical modulation Download PDF

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Publication number
CN104764903A
CN104764903A CN201410008477.4A CN201410008477A CN104764903A CN 104764903 A CN104764903 A CN 104764903A CN 201410008477 A CN201410008477 A CN 201410008477A CN 104764903 A CN104764903 A CN 104764903A
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China
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negative electrode
positive electrode
electrode
driving
capacitance accelerometer
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CN201410008477.4A
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Chinese (zh)
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万蔡辛
杨少军
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北京卓锐微技术有限公司
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Priority to CN201410008477.4A priority Critical patent/CN104764903A/en
Publication of CN104764903A publication Critical patent/CN104764903A/en

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Abstract

The invention discloses a silicon capacitor type accelerometer of mechanical modulation. The accelerometer comprises a substrate, a silicon chip and metal electrodes. The silicon chip comprises a central mass block (100); the central mass block (100) comprises an internal intermediate-frequency movable part (601) and an external low-frequency movable part (602) surrounding the internal intermediate-frequency movable part (601), and the internal intermediate-frequency movable part (601) is connected with the external low-frequency movable part (602) via beams (701). The metal electrodes include mass block electrodes (101), a negative feedback electrode (202), a positive feedback electrode (201), positive driving electrodes (501), negative driving electrodes (502), positive driving detection electrodes (401), negative driving detection electrodes (402), a positive external acceleration detection anode (301) and a negative external acceleration detection anode (302), wherein the mass block electrodes (101) are connected with the central mass block (100) via beams (702).

Description

A kind of silicon capacitance accelerometer of machinery modulation

Technical field

The present invention relates to accelerometer technical field, particularly a kind of silicon capacitance accelerometer of machinery modulation.

Background technology

Silicon capacitance accelerometer is subordinate to micro electro mechanical system field (MEMS, micro-electro-mechanicalsystem), that Silicon Wafer (silicon wafer) is made responsive extraneous apparent acceleration (so-called apparent acceleration by application MEMS process technology, refer to the inertial acceleration component on accelerometer sensitive direction and gravitational acceleration component sum, hereinafter referred acceleration) variable capacitance, and be aided with subsequent conditioning circuit, a class micro-acceleration gauge of formation.Compared with conventional accelerometers, micro-acceleration gauge has many-sided advantages such as volume, quality, power consumption, cost, production capacity, environmental suitability, but with the quartz flexible accelerometer of degree of precision in conventional accelerometers etc. in contrast, current all kinds of micro-acceleration gauge in precision without clear superiority.In numerous micro-acceleration gauge class, the silicon micro-resonance type accelerometer of power sensitivity and the silicon capacitance accelerometer of displacement sensitivity all have the report of degree of precision, and comparatively other piezoresistive accelerometers, piezoelectric accelerometer, heat convection type accelerometer etc. have more Precision Potential.

For silicon micro-resonance type accelerometer, structurally there is the extensively research such as Chinese patent CN1979175, CN101303365, CN101858927, CN102749479, its details is also improved just like technology such as Chinese patent CN1405566, CN102136830 by subsequent conditioning circuit, the precision of silicon micro-resonance type accelerometer is improved further.

With regard to silicon capacitance accelerometer, version, be generally divided into shape if the sandwich silicon capacitance accelerometer of Chinese patent CN102175890 and shape are as the comb silicon capacitance accelerometer of Chinese patent CN201852851.For sandwich silicon capacitance accelerometer, the prior arts such as Chinese patent CN102175890, CN101625372, CN1570651 are all that the precision improving silicon capacitance micro-acceleration gauge has made effort, and the precision of sandwich silicon capacitance accelerometer is significantly improved.

But there are the technological difficulties such as warm drift is large, bandwidth is low, be difficult to closed loop, cross-couplings suppresses difficult raising, high-precision configuration involves great expense in silicon micro-resonance type accelerometer, constrains precision at short notice and improve and product promotion.Also there is technique and realize the problem that difficulty is higher, electrical lead wire is difficult in sandwich silicon capacitance accelerometer, thus constrains product promotion and production capacity, have impact on high-precision circuit skill and realize.

Even so, but due to the silicon micro-resonance type accelerometer of power sensitivity principle of work by driving carrier-in-interference, the structural sensitivity of sandwich silicon capacitance accelerometer is higher, still has accuracy benefits than traditional comb silicon capacitance accelerometer.Therefore, how the characteristic of above-mentioned two kinds of accelerometers is maximized favourable factors and minimized unfavourable ones, provide a kind of anti-interference accelerometer that is good, highly sensitive, that be easy to apply to become those skilled in the art's problem demanding prompt solution.

Summary of the invention

The object of the invention is to, for respective limitation and the advantage of silicon micro-resonance type accelerometer, sandwich silicon capacitance accelerometer and comb silicon capacitance accelerometer in aforementioned prior art, and the limitation of silicon micro-gyroscope decoupling technology and advantage, propose one by drive carrier-in-interference, structural sensitivity higher, according to design feature application decoupling technology, compatible low difficulty SOG production technology, electrical lead wire silicon capacitance accelerometer flexibly.Thus maintaining under the suitable prerequisite of other performance index, make noise and the performance index such as anti-interference be improved significantly, thus accelerometer precision is improved further, and is easier to low cost large-scale production.

For solving the problem, the technical solution used in the present invention is:

A silicon capacitance accelerometer for machinery modulation, comprises substrate, silicon chip and metal electrode, wherein:

Described silicon chip comprises centroplasm gauge block (100); Described centroplasm gauge block (100) comprises inner intermediate frequency movable part (601) and is centered around the external low frequency movable part (602) of described inner intermediate frequency movable part (601) surrounding, is connected between described inner intermediate frequency movable part (601) and external low frequency movable part (602) by beam (701);

Described metal electrode comprises: be positioned at the mass electrode (101) near described centroplasm gauge block, and described mass electrode (101) is connected with described centroplasm gauge block (100) by beam (702); Be positioned at the feedback negative electrode (202) near described centroplasm gauge block, feedback positive electrode (201); Be positioned at the driving positive electrode (501) near described inner intermediate frequency movable part (601), driving negative electrode (502), driving detection positive electrode (401), driving detection negative electrode (402), extraneous acceleration detection positive electrode (301), extraneous acceleration detection negative electrode (302), driving positive electrode (501), driving negative electrode (502), driving detection positive electrode (401) and driving detection negative electrode (402).

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, described mass electrode (101) is for retraining movable centroplasm gauge block (100) and being drawn by its electric signal; Described extraneous acceleration detection positive electrode (301), extraneous acceleration detection negative electrode (302), driving positive electrode (501), driving negative electrode (502), driving detect positive electrode (401), drive detection negative electrode (402), feed back negative electrode (202) and feed back positive electrode (201) and be comb electrode.

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, described inner intermediate frequency movable part (601) is utilized high frequency electrical signal to drive by raising frequency driving method by driving positive electrode (501) and driving negative electrode (502).

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, described extraneous acceleration detection positive electrode (301) and extraneous acceleration detection negative electrode (302) are by detecting positive electrode (401) using driving and driving detection negative electrode (402) signal that detects to detect extraneous acceleration as the mode of carrier wave.

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, described extraneous acceleration detection positive electrode (301) and extraneous acceleration detection negative electrode (302) detect extraneous acceleration by the mode of direct-detection amplitude.

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, the single order natural frequency of vibration of described inner intermediate frequency movable part (601) is higher than the single order natural frequency of vibration of described centroplasm gauge block (100), and the vibration shape direction of described inner intermediate frequency movable part (601) and described centroplasm gauge block (100) is mutually orthogonal.

According to the silicon capacitance accelerometer of machinery modulation that the present invention proposes, wherein, the accuracy of detection of described silicon capacitance accelerometer is improved by the mode reducing operating air pressure, and described accuracy of detection is the highest is inversely proportional to atmospheric value.

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, described silicon capacitance accelerometer is made up of SOG production technology.

According to the silicon capacitance accelerometer of the machinery modulation that the present invention proposes, wherein, be connected by decoupling-structure between described inner intermediate frequency movable part (601) and described external low frequency movable part (602).

Compared with prior art, the silicon capacitance accelerometer that the present invention proposes has higher sensitivity and larger band of operation, its linearity is good, operating accuracy is high, fixture wire is flexible, has good environmental suitability, is easy to low cost large-scale production.

Accompanying drawing explanation

Fig. 1 is the mechanical construction drawing of the embodiment of the present invention.

Description of reference numerals: 100-centroplasm gauge block; 101-mass electrode; 201-feeds back positive electrode; 202-feeds back negative electrode; The extraneous acceleration detection positive electrode of 301-; The extraneous acceleration detection negative electrode of 302-; 401-drives and detects positive electrode; 402-drives and detects negative electrode; 501-drives positive electrode; 502-drives negative electrode; The inner intermediate frequency movable part of 601-; 602-external low frequency movable part; 701-straight beam; 702-folded beam.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not paying the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.

The present invention mainly provides a kind of silicon capacitance accelerometer of machinery modulation.In prior art, but there are the technological difficulties such as temperature drift is large, bandwidth is low, be difficult to closed loop, cross-couplings suppression difficulty improves, high-precision configuration involves great expense in silicon micro-resonance type accelerometer precision height; Sandwich silicon capacitance accelerometer precision is high but also there are the technological difficulties that technique realizes the high and electrical lead wire difficulty of difficulty; Although the simple and easy to do and electrical lead wire of common comb silicon capacitance accelerometer processing technology is flexible, exist easily be disturbed because comb is more, insufficient sensitivity high-technology difficult point thus constrain its precision and improve.Just for limitation and the advantage of above-mentioned listed all kinds of accelerometer, the present invention just propose one by drive carrier-in-interference, structural sensitivity higher, according to design feature application decoupling technology, compatible low difficulty SOG production technology, electrical lead wire silicon capacitance accelerometer flexibly, thus maintaining under the suitable prerequisite of other performance index, make noise and the performance index such as anti-interference be improved significantly, thus accelerometer precision is improved further, and be easier to low cost large-scale production.Below in conjunction with concrete drawings and Examples, the invention will be further described.

Refer to Fig. 1, silicon capacitance accelerometer of the present invention comprises centroplasm gauge block 100 and mass electrode 101, feedback positive electrode 201, feedback negative electrode 202, extraneous acceleration detection positive electrode 301, extraneous acceleration detection negative electrode 302, driving detects positive electrode 401, driving detects negative electrode 402, drive positive electrode 501 and driving negative electrode 502, and above-mentioned all electrodes are and are fixedly installed.Wherein, two mass electrodes 101 lay respectively at the both sides up and down of centroplasm gauge block 100, and are connected with centroplasm gauge block 100 respectively by two folded beams 702, thus centroplasm gauge block 100 can vertically be moved up and down.

Centroplasm gauge block 100 is divided into again the inside intermediate frequency movable part 601 being positioned at inside center and the external low frequency movable part 602 being centered around inner intermediate frequency movable part 601 surrounding, wherein be connected by four straight beams arranged along the vertical direction 701 between inner intermediate frequency movable part 601 and external low frequency movable part 602, thus ensure that inner intermediate frequency movable part 601 can along horizontal direction side-to-side movement.

During normal work, the present invention, by driving positive electrode 501 and driving the voltage signal of negative electrode 502 to produce electrostatic force, drives inner intermediate frequency movable part 601 along X-direction oscillate.The Vibration Condition that negative electrode 402 detects inner intermediate frequency movable part 601 can be detected by driving to detect positive electrode 401 and drive, and drive positive electrode 501 according to testing result adjustment and drive the voltage signal on negative electrode 502, formation control drives the closed loop of inner intermediate frequency movable part 601 vibrating effect.Now, if extraneous acceleration is zero, because the Y-direction of each tooth of each tooth relative mass cube electrode 100 of extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302 is apart from equal, and the right opposite of its X-direction amasss in vibration processes constant, therefore the not change in each vibration period of inner intermediate frequency movable part 601 of the electric capacity of extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302 relative mass cube electrode 101.Once the extraneous acceleration occurring Y-direction, the effect that centroplasm gauge block 100 can be subject to inertial force is moved along Y-axis, although now extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302 relative mass cube electrode 101 amass in vibration processes still constant at the right opposite of X-direction, but because centroplasm gauge block 100 entirety moves along Y direction, the change of electric capacity in vibration processes of both sides no longer can be cancelled out each other, therefore the electric capacity of extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302 relative mass cube electrode 100 to produce with vibration with change frequently and anti-phase in each vibration period of inner intermediate frequency movable part 601.Like this, the acceleration signal along Y direction of extraneous input is just by inside intermediate frequency movable part 601 structural modulation that vibrates along X-direction.

So far, the vibration of this and inner intermediate frequency movable part 601 directly can be detected by extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302 with capacitance change signal frequently and export as accelerometer, also can using the capacitance change signal that detected by electrode 301 and 302 as foundation, control the voltage signal on feedback positive electrode 201 and feedback negative electrode 202, thus produce electrostatic force by feedback positive electrode 201 and feedback negative electrode 202 and offset the inertial force that extraneous input acceleration produces on centroplasm gauge block 100, form the closed loop of electrostatic force feedback silicon capacitance accelerometer, the size simultaneously reading the electrostatic force produced exports as accelerometer, in order to characterize extraneous acceleration.

The present invention is when detecting extraneous acceleration by described extraneous acceleration detection positive electrode 301 and extraneous acceleration detection negative electrode 302, allow to utilize to drive to detect positive electrode 401 and drive and detect the scheme that signal that negative electrode 402 detects provides carrier signal, also allow not utilize to drive to detect positive electrode 401 and drive and detect signal that negative electrode 402 detects and the scheme that directly detects amplitude.Detect positive electrode 401 if application drives and the carrier signal detecting signal that negative electrode 402 detects and provide is provided, can evaluation sensor structure itself be revised by the impact outputing signal error; Detect signal that negative electrode 402 detects if do not utilize to drive to detect positive electrode 401 and drive and directly detect amplitude, then can improve the efficiency of testing circuit.By comparison, common silicon capacitance accelerometer subsequent treatment all needs carrier signal, therefore can have an impact to accuracy of detection.

Preferably, in the present invention, the single order natural frequency of vibration of inner intermediate frequency movable part 601 is higher than the single order natural frequency of vibration of integral central mass 100, and the vibration shape direction of both is mutually orthogonal.Make the single order natural frequency of vibration of inner intermediate frequency movable part 601 be intercoupling in order to both the separation reductions by mode higher than the single order natural frequency of vibration of integral central mass 100, make both vibration shape directions mutually orthogonal, be of value to decoupling zero.

Preferably, the structural design of external low frequency movable part 602 of the present invention allows the common approach of compatible comb silicon capacitance accelerometer, the content disclosed in CN1359007; Syndeton simultaneously between external low frequency movable part 602 of the present invention and inner intermediate frequency movable part 601, allows the common decoupling zero scheme of compatible microthrust test, the content disclosed in CN1851401.

Preferably, silicon capacitance accelerometer of the present invention allows work in the environment lower than a standard atmospheric pressure and obtain more high precision.Due to the structure using the present invention to propose, common subsequent process circuit means are used in after precision is improved in structure of the present invention, the mechanical noise of silicon capacitance accelerometer occupies more proportion, therefore, after the air pressure by reducing the work of silicon capacitance accelerometer reduces its mechanical noise, the precision of accelerometer can be improved significantly further.For this reason, the present invention allows deviser's variable area formula structure that unrestricted choice is common when arranging relatively movable comb pair or Varied clearance formula structure.

In addition, due to version of the present invention and common comb silicon capacitance accelerometer compatibility, therefore the preparation method of silicon capacitance accelerometer of the present invention can carry the compatible common SOG(Silicon On Glass being commonly used to comb silicon capacitance accelerometer and microthrust test processing on high-precision basis) production technology.

In sum, the silicon capacitance accelerometer of structure of the present invention is adopted to maintain under the suitable prerequisite of other performance index, make noise and the performance index such as anti-interference be improved significantly, thus accelerometer precision is improved further, and is easier to low cost large-scale production.

Above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in previous embodiment, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of embodiment of the present invention technical scheme.

Claims (9)

1. a silicon capacitance accelerometer for machinery modulation, comprises substrate, silicon chip and metal electrode, it is characterized in that:
Described silicon chip comprises centroplasm gauge block (100); Described centroplasm gauge block (100) comprises inner intermediate frequency movable part (601) and is centered around the external low frequency movable part (602) of described inner intermediate frequency movable part (601) surrounding, is connected between described inner intermediate frequency movable part (601) and external low frequency movable part (602) by beam (701);
Described metal electrode comprises: be positioned at the mass electrode (101) near described centroplasm gauge block, and described mass electrode (101) is connected with described centroplasm gauge block (100) by beam (702); Be positioned at the feedback negative electrode (202) near described centroplasm gauge block, feedback positive electrode (201); Be positioned at the driving positive electrode (501) near described inner intermediate frequency movable part (601), drive negative electrode (502), drive detect positive electrode (401), drive detect negative electrode (402), extraneous acceleration detection positive electrode (301), extraneous acceleration detection negative electrode (302), drive positive electrode (501), drive negative electrode (502), drive detect positive electrode (401) and drive detection negative electrode (402).
2. the silicon capacitance accelerometer of machinery modulation according to claim 1, is characterized in that, described mass electrode (101) is for retraining movable centroplasm gauge block (100) and being drawn by its electric signal; Described extraneous acceleration detection positive electrode (301), extraneous acceleration detection negative electrode (302), driving positive electrode (501), driving negative electrode (502), driving detect positive electrode (401), drive detection negative electrode (402), feed back negative electrode (202) and feed back positive electrode (201) and be comb electrode.
3. the silicon capacitance accelerometer of machinery modulation according to claim 1, it is characterized in that, described inner intermediate frequency movable part (601) is by driving positive electrode (501) and drive negative electrode (502) to utilize high frequency electrical signal to drive by raising frequency driving method.
4. the silicon capacitance accelerometer of machinery modulation according to claim 1, it is characterized in that, described extraneous acceleration detection positive electrode (301) and extraneous acceleration detection negative electrode (302) are by detecting positive electrode (401) using driving and driving detection negative electrode (402) signal that detects to detect extraneous acceleration as the mode of carrier wave.
5. the silicon capacitance accelerometer of machinery modulation according to claim 1, it is characterized in that, described extraneous acceleration detection positive electrode (301) and extraneous acceleration detection negative electrode (302) detect extraneous acceleration by the mode of direct-detection amplitude.
6. the silicon capacitance accelerometer of machinery modulation according to claim 1, it is characterized in that, the single order natural frequency of vibration of described inner intermediate frequency movable part (601) is higher than the single order natural frequency of vibration of described centroplasm gauge block (100), and the vibration shape direction of described inner intermediate frequency movable part (601) and described centroplasm gauge block (100) is mutually orthogonal.
7. the silicon capacitance accelerometer of machinery modulation according to claim 1, is characterized in that, the accuracy of detection of described silicon capacitance accelerometer is improved by the mode reducing operating air pressure, and described accuracy of detection is the highest is inversely proportional to atmospheric value.
8. the silicon capacitance accelerometer of machinery modulation according to claim 1, is characterized in that, described silicon capacitance accelerometer is made up of SOG production technology.
9. the silicon capacitance accelerometer of machinery modulation according to claim 1, is characterized in that, is connected between described inner intermediate frequency movable part (601) and described external low frequency movable part (602) by decoupling-structure.
CN201410008477.4A 2014-01-08 2014-01-08 Silicon capacitor type accelerometer of mechanical modulation CN104764903A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108020686A (en) * 2016-11-03 2018-05-11 意法半导体股份有限公司 MEMS three axis accelerometers with improvement configuration
US10768199B2 (en) 2016-11-03 2020-09-08 Stmicroelectronics S.R.L. MEMS tri-axial accelerometer with one or more decoupling elements

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CN102597699A (en) * 2009-08-04 2012-07-18 飞兆半导体公司 Micromachined inertial sensor devices
CN102955046A (en) * 2012-10-23 2013-03-06 合肥工业大学 Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof
CN103238075A (en) * 2010-09-18 2013-08-07 快捷半导体公司 Micromachined 3-axis accelerometer with a single proof-mass

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6450033B1 (en) * 1999-07-22 2002-09-17 Denso Corporation Semiconductor physical quantity sensor
CN102597699A (en) * 2009-08-04 2012-07-18 飞兆半导体公司 Micromachined inertial sensor devices
US20110219875A1 (en) * 2010-03-15 2011-09-15 Comm. a l'energie atomique et aux energies altern. Force sensor with reduced noise
CN103238075A (en) * 2010-09-18 2013-08-07 快捷半导体公司 Micromachined 3-axis accelerometer with a single proof-mass
CN102955046A (en) * 2012-10-23 2013-03-06 合肥工业大学 Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108020686A (en) * 2016-11-03 2018-05-11 意法半导体股份有限公司 MEMS three axis accelerometers with improvement configuration
US10768199B2 (en) 2016-11-03 2020-09-08 Stmicroelectronics S.R.L. MEMS tri-axial accelerometer with one or more decoupling elements

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