CN204046819U - A kind of silicon capacitor microphone increasing back cavity - Google Patents
A kind of silicon capacitor microphone increasing back cavity Download PDFInfo
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- CN204046819U CN204046819U CN201420436487.3U CN201420436487U CN204046819U CN 204046819 U CN204046819 U CN 204046819U CN 201420436487 U CN201420436487 U CN 201420436487U CN 204046819 U CN204046819 U CN 204046819U
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Abstract
The utility model provides a kind of silicon capacitor microphone increasing back cavity, comprising: substrate and shell, and jacket is located at substrate and is formed encapsulating structure; Shell is provided with acoustic aperture, encapsulating structure inside is provided with the sensitive structure of the micromechanics of electrical cable, integrated circuit and the band operatic tunes, and one increases the application specific architecture of back cavity and supporting construction, wherein, application specific architecture is a hollow shell-like structure, its bottom surface is open, and application specific architecture is fixed on substrate, forms the simply connected space between the inner space of its hollow and substrate; Application specific architecture surface comprises par and the first lug boss, the second lug boss, and par is provided with the hole be connected with the operatic tunes of sensitive structure, makes the operatic tunes of the simply connected space and sensitive structure jointly form the back cavity of microphone; Between the par that supporting construction is located at application specific architecture inside or application specific architecture and substrate.Structure of the present utility model, can ensure overall dimensions and structural reliability, effectively increases below sensitive structure (back cavity).
Description
Technical field
The utility model relates to a kind of microphone, particularly a kind of silicon capacitor microphone with the increase back cavity of novel package structure.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) system because its volume is little, be suitable for the advantages such as surface mount and be widely used in consumer electronics and some high-end electronic products, such as: mobile phone, MP3, recording pen, automotive electronics etc.Usually, MEMS system is comprising the sensitive structure of the micromechanics other physical signallings being converted into the signal of telecommunication foremost, or in the end end comprises transform electrical signals is the micro mechanical structure actuator of other physical signallings.The sensitive structure of micromechanics plays the translation interface effect of the signal of telecommunication and other physical signallings in MEMS system.For meeting the growing material and cultural needs of the people, the index such as volume, cost, sensitivity, the linearity of MEMS system is also constantly optimizing raising.In relevant optimisation technique scheme, is no lack of numerous effort, attempt by (being usually referred to as in industry " back cavity-Back Volume " the air space below sensitive structure, after referring to that sound wave runs into sensitive structure, the space at rear, sensitivity portion) increased, the sensitivity of silicon capacitor microphone can be made so higher, and frequency response curve is better.But, in existing many technical schemes, the structure that the traditional Machining Technology of many utilizations realizes, as the technical scheme of US Patent No. 20020102004, to back cavity increase contribution very limited, add the height of product too much, result in cost increase and range of application limited.Other attempt the technical scheme as CN201042077Y and CN201274566Y, larger back cavity is formed by multiple elements of encapsulating housing inside, like this, in order to prevent the impact of the undesirable elements such as gas leakage, not only higher requirement is proposed to the machining accuracy of each element, assembly work for each element joint it is also proposed higher requirement, this means lower rate of finished products and the cost of Geng Gao.Chinese patent CN201383873Y and CN101394687A by arranging lid to realize the object increasing back cavity below sensitive structure, but such structure increases limited efficiency for back cavity; The thickness and the below that are limited to lid in addition do not have supporting construction, when utilizing the space of integrated circuit (IC) chip and sensitive structure beneath chips, lid need bear the pressure passed over when to do wire bond (wirebond) when arranging electrical cable on this two chip block, can not collapse or lid distortion cause gas leakage, which limits the design space of lid, have influence on the effect increasing back cavity; Moreover the space that such lid requires on substrate processing step to connect lid internal main to want below space and sensitive chip, this introduces the further restriction to the processing of substrate and requirement.
3 D-printing, prints or three-dimensional printing also known as 3D, is a kind of based on mathematical model file, uses powdery metal or light-cured resin etc. can jointing material, is carried out the technology of constructed object by the mode successively printed.It is without the need to machining or any mould, just directly can generate the part of any shape from computer graphics data, thus greatly shorten the lead time of product, boost productivity and reduce production cost.3D printer is a kind of rapid molding device of the technology such as utilize photocuring and ply of paper to fold.Develop rapidly since appearance, nowadays this technology is applied in multiple field, and its scale also makes its cost progressively reduce, and precision is also applicable to some constitutional details for processing microminiature product.
Corrosion of metals technique is comparatively classical process technology, metal silk-screen etching process development wherein is in recent years very fast, and its technique roughly comprises: screen printing forme make (painting original text, negative processed, network selection, the net that stretches tight, painting/subsides light-sensitive surface) → printable fabric prepare (blanking, prepress treatment, location) → silk screen printing-→ drying-→ corrode.In process of production, it is crucial that " negative processed ", " pre-treatment " and " silk-screen plate making " three process.Along with the progressively raising of corrosion of metals technique in recent years, also there are some constitutional details for processing microminiature product.
Machine finishing, in development in recent years, also comprises the multiple directions such as metal material and nonmetallic materials, numerical control and non-numerical control, and it is diversified and working ability is more and more prosperous, but the cost of precision-machined parts is restraining factors.To the machine finishing of epoxide resin material, make it not only as the substrate part of circuit, also can meet corresponding size and dimension demand as mechanical structured member.But relative in Chinese patent CN201383873Y can a drawing metal lid, the cost of machine finishing method is subject to certain restrictions, implement time should comprehensively the overall situation consider.
Proposition of the present utility model, silicon capacitor microphone can be combined with 3 D-printing, corrosion of metals or machine finishing technology, under the prerequisite ensureing overall structure reliability, by preparation through mechanics and dimensionally-optimised increase back cavity application specific architecture, effectively increase the air space (back cavity) below described sensitive structure, thus improve the limiting snesibility of silicon capacitor microphone, remain with the original small package of silicon capacitor microphone, low cost feature simultaneously.
Utility model content
The utility model provides a kind of silicon capacitor microphone with novel package structure, can in conjunction with 3 D-printing, corrosion of metals or machine finishing technology, by arranging through mechanics and dimensionally-optimised increase back cavity application specific architecture below the sensitive structure of micromechanics, under the prerequisite ensureing overall structure reliability, small package, low cost, effectively increase the air space (back cavity) below described sensitive structure, thus improve the limiting snesibility of silicon capacitor microphone.
For solving the problem, the technical solution adopted in the utility model is:
Increase a silicon capacitor microphone for back cavity, comprising: one piece of substrate and a shell, described jacket is located at described substrate and is formed encapsulating structure; Be provided with acoustic aperture on the housing, described encapsulating structure inside is provided with the sensitive structure of the micromechanics of electrical cable, integrated circuit and the band operatic tunes, and one increases the application specific architecture of back cavity and supporting construction, described electrical cable is used for the electrical connection between described substrate, described integrated circuit and described sensitive structure; Wherein, described application specific architecture is a hollow shell-like structure, and its bottom surface is open, and described application specific architecture is fixing on the substrate, forms the simply connected space between the inner space of its hollow and described substrate; Described application specific architecture surface comprises the first lug boss, the second lug boss that are located at middle par and are located at both sides respectively, described sensitive structure is located at the top of described par, described par is provided with the hole be connected with the operatic tunes of described sensitive structure, makes the operatic tunes of the described simply connected space and described sensitive structure jointly form the back cavity of microphone; Between the par that described supporting construction is located at the application specific architecture of described application specific architecture inside and described substrate.
For increasing the silicon capacitor microphone of back cavity, complete described sensitive structure and cavity configuration after corresponding increase relative fixing after, wire bond (wirebond) technique by arranging lead-in wire completes the extraction of electric signal by substrate, and after the increase at this moment below sensitive structure, cavity configuration will be subject to the active force of chopper in wire bond.The application specific architecture of increase back cavity can not collapse or edge deformation causes gas leakage, therefore between application specific architecture and substrate, arranges the supporting constructions such as truss, muscle, rib, boss, has higher reliability by than shell structure.
Preferably increase the silicon capacitor microphone of back cavity, wherein, described integrated circuit is located at above described first lug boss, or the side of described first lug boss.
Preferably increase the silicon capacitor microphone of back cavity, wherein, described supporting construction also comprise be located at described first lug boss and/or described second lug boss inside, for strengthening the part of described application specific architecture.
Preferably increase the silicon capacitor microphone of back cavity, the material of preparing of wherein said application specific architecture can be epoxy resin, metal or light-cured resin.Selected material require meeting requirements on three-dimensional prints, the material require of corrosion of metals or machine finishing, and normally can work under the environmental condition of silicon capacitor microphone standard production operation and operating mode, play sensitive structure chip described in support even simultaneously support integrated circuit (IC) chip effect and stably increase the effect of back cavity.
Preferably increase the silicon capacitor microphone of back cavity, the geomery of wherein said application specific architecture, the encapsulating structure inner space described in as far as possible utilizing under the prerequisite that can allow at subsequent machining technology and transaudient approach increases back cavity.First, if the structure increasing back cavity forms excessive pressure to the package dimension of miniaturization, cost and the range of application of silicon capacitor microphone product will be had influence on, need when this is arranged to avoid as far as possible.In existing scheme, the package dimension of scheme to miniaturization increasing shell defines excessive pressure, and the thickness of scheme to encapsulation that substrate makes step also form certain pressure.This is because, the structure of traditional increase back cavity is the simple structure such as lid, hollow pad, the space of the inner comparatively complicated shape of encapsulation cannot be utilized expeditiously, so just face or increase back cavity limited space, or the problem excessive to the package dimension pressure of miniaturization.There are some in addition as the technical scheme of CN201274566Y, the inner multiple parts of encapsulation are utilized to improve the utilance of encapsulation inner space, the element precision introducing the processing of multiple part requires by this, assembly precision requires problem, make processing technology complicated, yield reduces, and increases the cost pressure of silicon capacitor microphone.Like this, adopt one-time formed application specific architecture, the problems referred to above can be avoided also to utilize the space of inner comparatively complicated shape expeditiously.
Preferably increase the silicon capacitor microphone of back cavity, wherein said supporting construction, be connected as one with described application specific architecture.Structure supporting construction and application specific architecture being set to one together can be prepared in 3 D-printing and corrosion of metals technique, thus effectively can reduce production cost, but select machine finishing method when implementing as concrete, operating mode, yield and cost situation that then should be comprehensively concrete be analyzed, and decision is assembled together after supporting construction and application specific architecture are together processed or processed respectively again.
Preferably increase the silicon capacitor microphone of back cavity, wherein said substrate thickness, under the prerequisite that can allow in technique and the strength of materials, arrange thin to leave larger encapsulation inner space as far as possible.Chinese patent CN201383873Y by arranging lid to realize the object increasing back cavity below sensitive structure, but this space needing processing step on substrate to connect lid internal main to want below space and sensitive chip, this introduces the further restriction to the processing of substrate and requirement.Can be reduced costs by the substrate of compatible conventional silicon capacitor microphone in the utility model, because described application specific architecture both can by the mechanical support of described supporting construction realization to chip, the rear cavity segment of sensitive structure lower space and increase can be communicated as one by the gap of described supporting construction again, thus without the need to connecting two parts space by making step on substrate.When being subject to the thickness limits of overall package, owing to not making step on substrate, make thinner substrate to adapt to overall needs under the prerequisite that also can allow in technique and the strength of materials, thus substrate without the need to being subject to step thinning after step place thickness restrict.
Accompanying drawing explanation
Fig. 1 is the generalized section of an embodiment of the present utility model;
Fig. 2 is the schematic top plan view of omitting after shell and acoustic aperture of another embodiment of the present utility model.
Description of reference numerals: 101-shell; 102-acoustic aperture; 201-application specific architecture; 202-supporting construction; 301-substrate; 401-electrical cable; 402-electric capacity; 501-sensitive structure; 502-integrated circuit (IC) chip.
Embodiment
The utility model is mainly used in the silicon capacitor microphone increasing back cavity, and improve the limiting snesibility of microphone by increasing back cavity, below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
Fig. 1 is an embodiment of the present utility model.As shown in Figure 1, the encapsulating housing that substrate 301 is formed jointly with shell 101, shell 101 is provided with acoustic aperture 102; The application specific architecture 201 increasing back cavity is secured above substrate 301; The first lug boss of application specific architecture 201 and/or the second lug boss inner and be provided with supporting construction 202 between application specific architecture 201 and substrate 301; Application specific architecture 201 is a hollow shell-like structure, its bottom surface is open, application specific architecture 201 is fixed on substrate 301, the simply connected space is formed between the inner space of its hollow and substrate 301, supporting construction 202 is located at the first lug boss and/or support application specific architecture 201 is played to strengthen the structural strength of application specific architecture 201 in the second lug boss inside, so that the effect arranging larger by the inner space of application specific architecture 201, supporting construction 202 part be located between application specific architecture 201 and substrate 301 plays a part to support between application specific architecture 201 and substrate 301; Application specific architecture 201 surface comprises the first lug boss, the second lug boss that are located at middle par and are located at both sides respectively, described par is provided with intercommunicating pore, above the intercommunicating pore of application specific architecture 201, be fixed with the sensitive structure 501 of micromechanics, the inner space of the hollow structure of application specific architecture 201 is connected by the operatic tunes of intercommunicating pore with sensitive structure 501; Above application specific architecture 201 first lug boss, be fixed with integrated circuit (IC) chip 502, the cavity of the second lug boss is communicated with sensitive structure 501, adds the cavity volume of back cavity; At sensitive structure 501, between integrated circuit (IC) chip 502 and substrate 301 upper surface, be provided with electrical cable 401.Wherein application specific architecture 201 and supporting construction 202 can according to the preparation technology of reality determine both one together preparation or both separately preparation be assembled together again; In the present embodiment, select 3 D-printing technique, application specific architecture 201 and supporting construction 202 are all together prepared realization by photocurable resin material one.The concrete form of supporting construction 202 includes but not limited to truss, muscle, rib, boss, to ensure that simple connectedness and the reliability experienced after the techniques such as follow-up wire bond (wirebond) of the back cavity after increasing are principle determination design parameter, take into account the cost of preparation; In the present embodiment owing to selecting 3 D-printing technique, supporting construction 202 adopts truss structure to realize.Due to the booster action of supporting construction 202, application specific architecture 201 is higher than the rigidity of general housing, the cavity volume that can comprise according to strengthened maximum effect application specific architecture 201, to ensure to optimize the size increasing back cavity under the prerequisite that the key parameter such as package dimension, cost is substantially constant.Limit by chopper range of movement in subsequent technique, as shown in Figure 1, the portion cavity in the present embodiment on the left of encapsulating structure is not included in application specific architecture 201.Those skilled in the art can carry out the optimization of mechanics and size on basis of the present utility model to application specific architecture 201, to obtain larger rear cavity space.
Fig. 2 is another embodiment of the present utility model.As shown in Figure 2, shell 101 and acoustic aperture 102 is omitted in figure, the application specific architecture 201 increasing back cavity is secured above substrate 301, the first lug boss of application specific architecture 201 and/or the second lug boss inner and be provided with supporting construction 202 between application specific architecture 201 and substrate 301, application specific architecture 201 is a hollow shell-like structure, its bottom surface is open, application specific architecture 201 is fixed on substrate 301, the simply connected space is formed between the inner space of its hollow and substrate 301, the part that supporting construction 202 is located at the first lug boss and/or the second lug boss inside plays a part to support application specific architecture 201 inside to strengthen the structural strength of application specific architecture 201, so that the inner space of application specific architecture 201 is arranged larger, supporting construction 202 part be located between application specific architecture 201 and substrate 301 plays a part to support between application specific architecture 201 and substrate 301, application specific architecture 201 surface comprises par and the first lug boss, the second lug boss, described par is provided with intercommunicating pore, above the intercommunicating pore of application specific architecture 201, be fixed with the sensitive structure 501 of micromechanics, the inner space of the hollow structure of application specific architecture 201 is connected by the operatic tunes of intercommunicating pore with sensitive structure 501, integrated circuit (IC) chip 502 is fixed with above application specific architecture 201 first lug boss, at sensitive structure 501, between integrated circuit (IC) chip 502 and substrate 301 upper surface, be provided with electrical cable 401, the upper surface (application specific architecture 201 is outside) of substrate 301 is provided with electric capacity 402.Select corrosion of metals technique, application specific architecture 201 and supporting construction 202 are all used aluminium sheet material one together to prepare realization.Owing to selecting corrosion of metals technique, supporting construction 202 adopts rib and boss structure to realize.Application specific architecture 201 in the present embodiment and supporting construction 202 also can be prepared by the method for machine finishing, but need to investigate its cost, carry out more afterwards preferably.Due to the booster action of supporting construction 202, application specific architecture 201 is higher than the rigidity of general housing, the volume of air that can comprise according to strengthened maximum effect application specific architecture 201, to ensure to optimize the size increasing back cavity under the prerequisite that the key parameter such as package dimension, cost is substantially constant.By chopper range of movement in subsequent technique and the spatial limitation of arranging electric capacity 402, as shown in Figure 2, the portion cavity in the present embodiment on the left of encapsulating structure is not included in application specific architecture 201.Those skilled in the art can carry out the optimization of mechanics and size on basis of the present utility model to application specific architecture 201, to obtain larger rear cavity space.
In addition, the term " front " in specification and claims, " afterwards ", " top ", " end ", " on ", D score, " left side ", " right side " etc. (if existence) is for illustration of property object and not necessarily for describing permanent relative position.Be understandable that the term so used can exchange in the appropriate case, make embodiment of the present utility model as herein described can at the enterprising line operate in other directions being such as different from above-mentioned or described direction herein.
Owing to adopting scheme of the present utility model, make mechanics and dimensionally-optimised technology realize becoming possibility, but its concrete technical scheme should belong to another topic, is not content of the present utility model.The beneficial effects of the utility model are, by the large scheme of application specific architecture of new technique and band inner support, can support such mechanics and dimensionally-optimised.In other words, those skilled in the art are on the basis of the utility model scheme, also these mechanics and dimensionally-optimised scheme can may be done (because the concrete microphone according to often kind of concrete model does these mechanics and dimensionally-optimised scheme, thing In the view of those skilled in the art are very simple and obvious), but be limited to old technique and increase back cavity inside configuration and do not support, cannot really realize corresponding optimization technically.
Illustrative to description of the present utility model above; and it is nonrestrictive; those skilled in the art is understood, and can carry out many amendments, change or equivalence, but they all will fall in protection range of the present utility model within the spirit and scope of claim restriction to it.
Claims (6)
1. increase a silicon capacitor microphone for back cavity, it is characterized in that, comprising: one piece of substrate and a shell, described jacket is located at described substrate and is formed encapsulating structure; Be provided with acoustic aperture on the housing, described encapsulating structure inside is provided with the sensitive structure of the micromechanics of electrical cable, integrated circuit and the band operatic tunes, and one increases the application specific architecture of back cavity and supporting construction, described electrical cable is used for the electrical connection between described substrate, described integrated circuit and described sensitive structure; Wherein, described application specific architecture is a hollow shell-like structure, and its bottom surface is open, and described application specific architecture is fixing on the substrate, forms the simply connected space between the inner space of its hollow and described substrate; Described application specific architecture surface comprises the first lug boss, the second lug boss that are located at middle par and are located at both sides respectively, described sensitive structure is located at the top of described par, described par is provided with the hole be connected with the operatic tunes of described sensitive structure, makes the operatic tunes of the described simply connected space and described sensitive structure jointly form the back cavity of microphone; Between the par that described supporting construction is located at the application specific architecture of described application specific architecture inside and described substrate.
2. the silicon capacitor microphone of increase back cavity according to claim 1, is characterized in that, described integrated circuit is located at above described first lug boss, or the side of described first lug boss.
3. the silicon capacitor microphone of increase back cavity according to claim 1, is characterized in that, described supporting construction also comprise be located at described first lug boss and/or described second lug boss inside, for strengthening the part of described application specific architecture.
4. the silicon capacitor microphone of increase back cavity according to claim 1, is characterized in that, the material of preparing of described application specific architecture is epoxy resin, metal or light-cured resin.
5. the silicon capacitor microphone of increase back cavity according to claim 1, is characterized in that, described supporting construction, the structure be integrated with described application specific architecture.
6. the silicon capacitor microphone of the increase back cavity according to claim 1 or 3, is characterized in that, described supporting construction is truss, muscle, rib or boss.
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| CN201420436487.3U CN204046819U (en) | 2014-08-04 | 2014-08-04 | A kind of silicon capacitor microphone increasing back cavity |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| CN106303867A (en) * | 2015-05-13 | 2017-01-04 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN109451383A (en) * | 2018-12-29 | 2019-03-08 | 华景科技无锡有限公司 | A kind of microphone |
-
2014
- 2014-08-04 CN CN201420436487.3U patent/CN204046819U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| CN106303867A (en) * | 2015-05-13 | 2017-01-04 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN106303867B (en) * | 2015-05-13 | 2019-02-01 | 无锡华润上华科技有限公司 | MEMS microphone |
| US10349185B2 (en) | 2015-05-13 | 2019-07-09 | Csmc Technologies Fab2 Co., Ltd. | MEMS microphone |
| CN109451383A (en) * | 2018-12-29 | 2019-03-08 | 华景科技无锡有限公司 | A kind of microphone |
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Effective date of registration: 20180724 Address after: 261206 Fengshan Road, Fangzi District, Weifang, Shandong Province, No. 68 Patentee after: Shandong Gettop Acoustic Co.,Ltd. Address before: 100191 Beijing Haidian District Zhichun Road 23 quantum Ginza 1002 room Patentee before: Beijing Acuti Microsystems Co., Ltd. |