CN105406159A - TE102 mode CT structure terahertz cross coupling waveguide filter - Google Patents
TE102 mode CT structure terahertz cross coupling waveguide filter Download PDFInfo
- Publication number
- CN105406159A CN105406159A CN201510456248.3A CN201510456248A CN105406159A CN 105406159 A CN105406159 A CN 105406159A CN 201510456248 A CN201510456248 A CN 201510456248A CN 105406159 A CN105406159 A CN 105406159A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- filter
- cross
- couplings
- terahertz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a TE102 mode CT structure terahertz cross coupling waveguide filter, and belongs to the technical field of terahertz. According to the filter, based on a conventional CT structure, a TE102 mode is employed, and transmission zeros can be generated at a low terminal of a stop band. The filter comprises transitions, rectangular resonant cavities, and coupling diaphragms, the filter is divided into three layers based on the vertical direction, and each layer can avoid the generation of an island structure. According to the filter, cross coupling is realized in the terahertz frequency band, the structure is simple and novel, the echo loss in a passband is low, the insert loss is low, the suppression performance of the stop band is good, and the filter is especially applicable to the SU-8 equal-dividing layer thick-film process for processing.
Description
Technical field
The invention belongs to Terahertz Technology technical field, be specifically related to a kind of TE102 mould CT structure Terahertz cross-couplings waveguide filter.
Background technology
Terahertz frequency range is defined as the electromagnetic spectrum scope of 300GHz-3000GHz, and its frequency band low side boundary also can be extended down to 100GHz broadly outward.Connect millimeter wave frequency band under this frequency range, above hold far infrared frequency range, in electromagnetic spectrum, position is unique, is in the intersection of electronics and photonic propulsion research category.Be limited by previous technical merit, this frequency range becomes blank few in number in electromagnetic spectrum; In view of the present situation that electromagnetic spectrum is in the recent decade day by day crowded, by the fast development of modern electronic technology level, the development and utilization of Terahertz frequency range is accelerated gradually.
In Terahertz system, the role of filter can not ignore, the quality of the fine or not influential system of its performance.Filter is of a great variety, different properties, the development work of THz wave waveguide filter is intensively carried out from the beginning of 21 century, between more than ten years, external research work just deepens continuously, domestic research work also starts, but due to development work just at the early-stage, at present in the world, the performance level of terahertz filter, often not as good as the similar filter worked in compared with low-frequency range, especially finds expression in the performance of the index level of such as in-band insertion loss, Out-of-band rejection amplitude lower than the latter.And waveguide because of its loss low, Q value is high becomes the ideal chose realizing Thz filter.
The people such as HongJunTang, WeiHong in 2011 utilize silicon-base micro-mechanical processing technology on substrate, be integrated with the feature of rectangular waveguide, devise a bimodulus cylinder resonator waveguide filter, this filter is integrated on substrate, and design center frequency is 355GHz, and bandwidth is 20GHz.The people such as X.Shang in 2011 utilize SU8 photoresist process, and devising centre frequency is 300GHz, and three dB bandwidth is the 4 rank capacitive window strap bandpass filters of 36GHz.The people such as XiaoBangShang in 2012 are based on SU8 photoresist process, and design and manufactured the five asymmetric capacitive window coupling WR-3 waveguide bandpass filter in rank and eight rank binary channels WR-3 waveguide filters, the former centre frequency is 300GHz, and relative bandwidth is 9%; The latter's centre frequency is 280GHz, and relative bandwidth is 13%.The people such as Q.Chen in 2013 devise a three rank WR-3 waveguide bandpass filters, centre frequency is 300GHz, relative bandwidth is 3.3% (10GHz), passband return loss is 20dB, this filter adopts SU8 photoresist process, and the coupling size between resonant cavity realizes by the side-play amount between adjustment resonant cavity.
2011, Tan Chenghuan, Jia Baofu, the people such as Zhang Xiaoqin devise a kind of X-band 3 chamber CT structured waveguide filters (" a kind of Fast design method of cross-couplings waveguide filter " [A]. China's Telecommunication learn, Communications Administration Bureau of Hubei Province .2011 communication and information technology new development---the 8th association's Annual Conference collection of thesis of China's Telecommunication [C]. China's Telecommunication learns, Communications Administration Bureau of Hubei Province: 2011:6.), the centre frequency of this filter is 11.5GHz, bandwidth is 100MHz, on traditional CT architecture basics, utilize resonance TE102 mould in the second resonant cavity, and first, the equal resonance of 3rd resonant cavity is in the feature of TE101 mould, a transmission zero can be produced at 11.36GHz place, the passband left side, its structure as shown in Figure 1, S parameter simulation result as shown in Figure 2.This 3 cavity filters only have a transmission zero at stopband low frequency end, and Out-of-band rejection effect is general.
SU-8 layering thick-film technique is one of main technique manufacturing THz filter, but SU-8 technique is difficult to process enclosed construction, namely comprises the filter of isolated island structure; Reason is that the etching depth of SU-8 layering thick-film technique equals the thickness of SU-8, therefore for want of supporting construction and the Terahertz cross-coupled filter can not processed containing isolated island structure.And the input of the filter of above-mentioned 3 cavity configurations, output waveguide, three resonant cavitys, direct-coupling diaphragm and cross-couplings diaphragm are all positioned at same plane, namely form enclosed construction in same plane, comprise isolated island, be therefore difficult to the filter adopting above-mentioned 3 cavity configurations of SU-8 processes.
The domestic and international research to THz waveguide filter at present mainly adopts direct-coupling form, such as, adopt inductive iris, capacitive diaphragm, off-set construction to be coupled, and rarely have the research work about THz cross-couplings waveguide filter.The present invention discloses a kind of TE102 mould CT structure Terahertz cross-couplings waveguide filter, and adopt SU-8 layering thick-film technique to process it, wherein SU-8 is a kind of photoresist responsive to ultraviolet (UVlight), SU-8 photoresist process is when processing THz filter, THz filter is divided into some Rotating fields, and every Rotating fields is processed, and then above-mentioned some Rotating fields are carried out superposing, sticky and, connected by alignment pin between last above-mentioned some layers and test.Therefore the feature of this technique can be utilized to design Terahertz cross-couplings waveguide filter.Terahertz cross-couplings waveguide filter can not only realize the miniaturization of filter, and stopband rejection is excellent, and therefore research and design Terahertz cross-couplings waveguide filter has larger meaning.
Summary of the invention
The object of the present invention is to provide a kind of TE102 mould CT structure Terahertz cross-couplings waveguide filter.This filter construction is simple, has two transmission zeros, Out-of-band rejection successful, is applicable to Terahertz frequency range, SU8 hierarchical thick-film technique can be adopted to realize, can be used for the filter cell of the radio-frequency front-end of Terahertz communication system at stopband low frequency end.
The present invention specifically adopts following technical scheme:
A kind of TE102 mould CT structure Terahertz cross-couplings waveguide filter, its structure is symmetrical form, as shown in Fig. 3 to Figure 11, comprise upper strata, middle level and understructure from top to bottom respectively as shown in Fig. 4, Fig. 5 and Fig. 6, its this filter vertical view of Fig. 7, Fig. 8 is its front view, and Fig. 9 is its rearview, Figure 10 is its left view, and Figure 11 is its layering schematic diagram; Described superstructure comprises input waveguide 101, output waveguide 105; Described media layer damage comprises the top of cross-couplings diaphragm 104, first, second, third rectangular cavity 201,202,203; Described understructure comprises coupling iris 102,103, the bottom of first, second, third rectangular cavity 201,202,203; The top of described first, second, third rectangular cavity 201,202,203 and respective lower cover up and down and form complete resonant cavity, the identical and arrangement in class triangle disposition of described three housing depths;
One end of described input waveguide 101 is the input of filter, its other end by be arranged on its broadside coupling window be on the whole connected with one end of the upper surface on the first rectangular cavity 201 top, first rectangular cavity 201 top is connected with the upper side of the 3rd rectangular cavity 203 by cross-couplings diaphragm 104 away from the side of input waveguide 101 one end, and the another side, bottom of described first rectangular cavity 201 is connected with the lower side of the second rectangular cavity 202 by coupling iris 102; The another side, bottom of described 3rd rectangular cavity 203 is connected with the lower side of the second rectangular cavity 202 by coupling iris 103, and coupling iris 102,103 is connected on the same side of the second rectangular cavity; The top of the 3rd rectangular cavity 203 is connected away from the one end with output waveguide 105 broadside place lower surface of the coupling window on the upper surface of cross-couplings diaphragm 104 one end by being arranged on it; The other end of output waveguide 105 is the output of filter.
Further, the height of described superstructure, media layer damage and understructure is all identical and equal 1/2nd of the narrow edge lengths of the corresponding standard waveguide of working frequency range.
Further, the height of described first, second, third rectangular cavity 201,202,203 is identical and equal the narrow edge lengths of described standard waveguide.
Further, described second resonant cavity 202 works in TE102 mould, and the first resonant cavity 201 and the 3rd resonant cavity 203 are operated in TE101 mould.
It should be noted that, filter provided by the invention is dual-port reciprocal device, i.e. the input of this invention also can be used as output, and meanwhile, output uses as input.
The operation principle of filter provided by the present invention is as follows:
Terahertz signal enters from filter input end mouth, through resonant cavity and coupled structure multiple reflections, when incident wave frequency is within the scope of filter passband, reflected wave is cancelled out each other at input port, always be reflected into zero, then energy is all by filter, exports from output port; Otherwise when incident wave frequency is outside filter passband scope, incident wave superposes mutually at input port, is almost all reflected, do not have the incident wave of this frequency range to export from output port, thus achieve filtering; The present invention is based on three rank general Chebyshev filters prototypes, topological structure is CT type, according to a kind of technology that Rosenberg proposes, the second resonant cavity is made to work in TE102 mould, and the first resonant cavity (201) and the 3rd resonant cavity (203) are still operated in TE101 mould, the cause being operated in TE102 mould due to the second resonant cavity makes cross-couplings between the first resonant cavity (201) and the 3rd resonant cavity (203) be transformed to electric coupling by magnetic coupling, thus this terahertz filter can form transmission zero on the left of passband.
Design of filter principle of the present invention: based on the filter of generalized chebyshev type CT structure.By carrying out vertical direction division to filter, this filter can be divided into equal three layers of thickness, wherein every layer thickness is the half on Narrow Wall of Waveguide limit, owing to have employed the hierarchy of this novelty, SU-8 hierarchical thick-film technique is adopted to add man-hour to it, avoid the generation of isolated island structure, thus cross-coupled filter design can be realized in Terahertz frequency range.
The present invention also provides the manufacture method of described TE102 mould CT structure Terahertz cross-couplings waveguide filter, and adopt SU-8 photoresist process, SU-8 and epoxy radicals ultraviolet negative photoresist, specifically comprise the following steps:
Step 1. initialization filter construction: owing to adopting SU-8 hierarchical thick-film technique to process, for ease of processing, the described upper strata being divided into by filter thickness equal, middle level and understructure, as shown in figure 11;
Step 2. lays the liquid SU-8 post-baking of one deck on silicon substrate;
Step 3. is baked and banked up with earth through soft, and SU-8 is solid-state;
Step 4., according to the cavity geometry of this Rotating fields described, lays mask post-exposure on SU-8 surface;
Step 5. is after exposure, and the cavity geometry of this Rotating fields then realizes sizing;
After the sizing of step 6. structure, silicon substrate and unexposed part SU-8 are removed, obtain this Rotating fields respective chamber;
Step 7. is at housing surface splash-proofing sputtering metal;
Step 8. repeated execution of steps 1 to step 7, can be obtained the upper strata of filter, middle level and understructure respectively, be connected between layers by alignment pin.
The invention has the beneficial effects as follows:
The filter that can be used for Terahertz frequency range provided by the invention adopts hierarchy, avoids occurring islanding problem in the single layer structure course of processing, is particularly useful for the processing of SU-8 hierarchical thick-film technique; And this filter adopts CT structure, realize cross coupling structure filter in Terahertz frequency range, have two transmission zeros at the stopband of low frequency end, Out-of-band rejection is functional.
Accompanying drawing explanation
Fig. 1 is the structural representation of 3 chamber CT structured waveguide filters of a kind of X-band in prior art.
Fig. 2 is the S parameter simulation result figure of filter shown in Fig. 1;
Fig. 3 is the perspective view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 4 is the superstructure schematic perspective view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 5 is the media layer damage schematic perspective view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 6 is the understructure schematic perspective view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 7 is the vertical view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 8 is the front view of Terahertz cross-couplings waveguide filter of the present invention.
Fig. 9 is the rearview of Terahertz cross-couplings waveguide filter of the present invention.
Figure 10 is the left view of Terahertz cross-couplings waveguide filter of the present invention.
Figure 11 is the layering schematic diagram of the Terahertz cross-coupled filter that the embodiment of the present invention provides.
Figure 12 is the perspective view of the Terahertz cross-coupled filter that the embodiment of the present invention provides.
Figure 13 is the portion size mark schematic diagram of the Terahertz cross-coupled filter that the embodiment of the present invention provides.
Figure 14 is the monolateral transition structure vertical view of Terahertz cross-coupled filter that the embodiment of the present invention provides.
Figure 15 is the Terahertz cross-coupled filter monolateral transition S parameter simulation result that the embodiment of the present invention provides.
Figure 16 is the Terahertz cross-coupled filter hierarchy schematic diagram that the embodiment of the present invention provides.
Figure 17 is the Terahertz cross-coupled filter emulation S parameter simulation result that the embodiment of the present invention provides.
Embodiment
Illustrate that the present invention is described in detail with embodiment below in conjunction with accompanying drawing.
Embodiment
The present embodiment provides a kind of TE102 mould CT structure Terahertz cross-couplings waveguide filter, and centre frequency 300GHz, bandwidth 10GHz, transmission zero is positioned at 315GHz place, and its structure is shown in Figure 12 to Figure 14.This filter is made up of external input waveguide 301, external output waveguide 308, First Transition waveguide 302, second transition waceguide 303, the 3rd transition waceguide 306, the 4th transition waceguide 307, waveguide bend 304 and 305, input waveguide 101, output waveguide 105, three rectangular cavities 201,202,203 and coupling iris 102,103,104;
The input 111 of described filter is in the upside of external input waveguide 301, and the downside of external input waveguide 301 connects First Transition waveguide 302; The other end of First Transition waveguide 302 is connected with the second transition waceguide 303, and is connected with input waveguide 101 via waveguide bend 304;
The other end of input waveguide 101 is connected with the first resonant cavity 201 by skew coupling window, first resonant cavity 201 is connected with the second resonant cavity 202 by direct-coupling diaphragm 102, second resonant cavity 202 is connected with the 3rd resonant cavity 203 by direct-coupling diaphragm 103, and the first resonant cavity 201 is connected with the 3rd resonant cavity 203 by cross-couplings diaphragm 104, the 3rd resonant cavity 203 is connected with output waveguide 105 by skew coupling window; Output waveguide 105 is connected with the 3rd transition waceguide 306 through waveguide bend 305, and then is connected with external output waveguide 308 through the 4th transition waceguide 307, and the downside of external output waveguide 308 is the output 112 of filter; Described waveguide bend 304,305 and the effect of transition waceguide 302,303,306,307 are convenient to filter be connected with outside port.
The manufacture method of the filter that the present embodiment provides is provided below for SU-8 technique:
Step 1. initialization filter construction: owing to adopting SU-8 hierarchical thick-film technique to carry out adding man-hour, the thickness of every layer is all the same, therefore described filter is divided into ground floor, the second layer, third layer, the 4th layer, layer 5 structure, as shown in figure 16;
Described ground floor structure comprises external input waveguide 301;
Second layer structure comprises transition waceguide 302,303,306,307, waveguide bend 304,305, input waveguide 101, output waveguide 105;
Third layer structure comprises the first half of three rectangular cavities 201,202,203, cross-couplings diaphragm 104, and three of external output waveguide 308 top of correspondence/part;
Four-layer structure comprises the latter half of three resonant cavitys 201,202,203, direct-coupling diaphragm 102,103, and the external output waveguide 308 middle(-)third part of correspondence;
Layer 5 structure comprises remainder three/part of external output waveguide 308.
Step 2. lays the liquid SU-8 post-baking of one deck on silicon substrate;
Step 3. is baked and banked up with earth through soft, and SU-8 is solid-state;
Step 4., according to the shape of this layer of filter cavity, lays mask post-exposure on SU-8 surface;
Step 5. is after exposure, and the cavity geometry of this Rotating fields then realizes sizing;
After the sizing of step 6. structure, silicon substrate and unexposed part SU-8 are removed, obtain this Rotating fields respective chamber;
Step 7. is at housing surface splash-proofing sputtering metal;
Step 8. repeated execution of steps 1 to step 7, can be obtained the ground floor of filter, the second layer, third layer, the 4th layer, layer 5 structure, be connected between layers by alignment pin.
So far the layering processing of filter completes, and is connected by ring flange and can tests with test macro.
Described design of filter centre frequency 300GHz, bandwidth 10GHz, transmission zero is positioned at 283GHz place, return loss is less than-20dB, first needs to obtain centre frequency 300GHz, bandwidth 10GHz, transmission zero is positioned at coupling coefficient and the Q value of 317GHz, theoretical according to generalized chebyshev, obtain its coupling coefficient and Q value, i.e. m
12=0.0330, m
23=0.0330, m
13=0.0109, Q
s=Q
l=25.59.
After obtaining coupling coefficient and Q value, 3 D electromagnetic simulation software HFSS is utilized to set up physical dimension and the coupling coefficient of this filter, the relation between Q value, thus the initial value that can obtain this filter construction size.Again the length of the second resonant cavity is increased to original twice, then initial value is optimized, finally obtain the optimal value of the parameter of filter.In conjunction with Figure 12 to Figure 14, the concrete dimensional parameters of described filter is: three cavity length l1=0.623mm, l2=1.646mm, l3=0.623mm, waveguide broadside a=0.864mm, narrow limit b=0.432mm, other size w0=0.706mm, t=0.1mm, w12=0.413mm, w23=0.413mm, w13=0.359mm, d01=0.097mm, d2=0.586mm, d03=0.097mm, d00=0.145mm, t1=0.277mm, t2=0.2mm, R0=0.96mm.Figure 15 is the S parameter simulation result of the monolateral transition structure of this Terahertz cross-couplings waveguide filter, and as seen from the figure, the S parameter S11 of this transition structure is all less than-25dB between 260GHz to 340GHz, and transiting performance is good.Figure 17 is the S parameter simulation result of this Terahertz cross-couplings waveguide filter.As seen from the figure, filter creates two transmission zeros at the left end of stopband, and wherein leftmost transmission zero may be caused by harmonic effect.This terahertz filter is excellent at the stopband rejection of stopband low side.
Claims (6)
1. a TE102 mould CT structure Terahertz cross-couplings waveguide filter, its structure is symmetrical form, comprises upper strata, middle level and understructure from top to bottom, it is characterized in that, described superstructure comprises input waveguide (101), output waveguide (105); Described media layer damage comprises cross-couplings diaphragm (104), the top of first, second, third rectangular cavity (201), (202), (203); Described understructure comprises coupling iris (102), (103), the bottom of first, second, third rectangular cavity (201), (202), (203); The top of described first, second, third rectangular cavity (201,202,203) and respective lower cover up and down and form complete resonant cavity;
One end of described input waveguide (101) is the input of filter, its other end by be arranged on its broadside coupling window be on the whole connected with one end of the upper surface on the first rectangular cavity (201) top, first rectangular cavity (201) top is connected with the upper side of the 3rd rectangular cavity (203) by cross-couplings diaphragm (104) away from the side of input waveguide (101) one end, the another side, bottom of described first rectangular cavity (201) is connected with the lower side of the second rectangular cavity (202) by coupling iris (102), the another side, bottom of described 3rd rectangular cavity (203) is connected with the lower side of the second rectangular cavity (202) by coupling iris (103), and coupling iris (102), (103) are connected on the same side of the second rectangular cavity, the top of the 3rd rectangular cavity (203) is connected away from the one end with output waveguide (105) broadside place lower surface of the coupling window on the upper surface of cross-couplings diaphragm (104) one end by being arranged on it, the other end of output waveguide (105) is the output of filter.
2. TE102 mould CT structure Terahertz cross-couplings waveguide filter according to claim 1, it is characterized in that, also comprise external input waveguide (301), external output waveguide (308), First Transition waveguide (302), the second transition waceguide (303), the 3rd transition waceguide (306), the 4th transition waceguide (307), waveguide bend (304,305);
The input (111) of described filter is positioned at the upside of external input waveguide (301), the downside of external input waveguide (301) connects First Transition waveguide (302), the other end of First Transition waveguide (302) is connected with the second transition waceguide (303), and the second transition waceguide (303) other end is connected with input waveguide (101) via waveguide bend (304);
Output waveguide (105) is connected with the 3rd transition waceguide (306) through waveguide bend (305), 3rd transition waceguide (306) is connected with the upside of external output waveguide (308) by the 4th transition waceguide (307), and the downside of external output waveguide (308) is the output (112) of filter.
3. TE102 mould CT structure Terahertz cross-couplings waveguide filter according to claim 1, it is characterized in that, the height of described superstructure, media layer damage and understructure is all identical and equal 1/2nd of the narrow edge lengths of the corresponding standard rectangular waveguide of working frequency range.
4. TE102 mould CT structure Terahertz cross-couplings waveguide filter according to claim 3, it is characterized in that, the height of described first, second, third rectangular cavity (201), (202), (203) is identical and equal the narrow edge lengths of described standard waveguide.
5. TE102 mould CT structure Terahertz cross-couplings waveguide filter according to claim 1, it is characterized in that, described second resonant cavity (202) works in TE102 mould, and the first resonant cavity (201) and the 3rd resonant cavity (203) are operated in TE101 mould.
6. a TE102 mould CT structure Terahertz cross-couplings waveguide filter as claimed in claim 1, specifically comprises the following steps:
Step 1. initialization filter construction: owing to adopting SU-8 hierarchical thick-film technique to process, for ease of processing, the described upper strata being divided into by filter thickness equal, middle level and understructure;
Step 2. lays the liquid SU-8 post-baking of one deck on silicon substrate;
Step 3. is baked and banked up with earth through soft, and SU-8 is solid-state;
Step 4., according to the cavity geometry of this Rotating fields described, lays mask post-exposure on SU-8 surface;
Step 5. is after exposure, and the cavity geometry of this Rotating fields then realizes sizing;
After the sizing of step 6. structure, silicon substrate and unexposed part SU-8 are removed, obtain this Rotating fields respective chamber;
Step 7. is at housing surface splash-proofing sputtering metal;
Step 8. repeated execution of steps 1 to step 7, can be obtained the upper strata of filter, middle level and understructure respectively, be connected between layers by alignment pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510456248.3A CN105406159B (en) | 2015-07-30 | 2015-07-30 | A kind of CT structure Terahertzs cross-couplings waveguide filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510456248.3A CN105406159B (en) | 2015-07-30 | 2015-07-30 | A kind of CT structure Terahertzs cross-couplings waveguide filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105406159A true CN105406159A (en) | 2016-03-16 |
| CN105406159B CN105406159B (en) | 2018-01-12 |
Family
ID=55471509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510456248.3A Expired - Fee Related CN105406159B (en) | 2015-07-30 | 2015-07-30 | A kind of CT structure Terahertzs cross-couplings waveguide filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105406159B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058390A (en) * | 2016-07-08 | 2016-10-26 | 桂林电子科技大学 | Terahertz band-stop filter for adjustment through electrostatic driving |
| CN111430858A (en) * | 2019-12-08 | 2020-07-17 | 南京航空航天大学 | Duplex filter based on TE103 waveguide mode |
| CN114430099A (en) * | 2022-01-20 | 2022-05-03 | 电子科技大学 | E-surface terahertz waveguide filter based on novel dual-mode resonant cavity |
| CN114497941A (en) * | 2022-04-18 | 2022-05-13 | 电子科技大学 | Terahertz waveguide filter based on dual-mode resonant cavity and design method thereof |
| CN116345096A (en) * | 2023-05-19 | 2023-06-27 | 电子科技大学 | Terahertz 90-degree waveguide filter coupler with low-amplitude unevenness |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1564835A1 (en) * | 2004-02-16 | 2005-08-17 | Siemens Mobile Communications S.p.A. | Inline waveguide filter with up to two out-of-band transmission zeros |
| CN104701593A (en) * | 2015-02-02 | 2015-06-10 | 电子科技大学 | Short millimeter wave stacked type cylindrical cavity filter for restraining parasitic mode |
| CN104795616A (en) * | 2015-04-17 | 2015-07-22 | 电子科技大学 | Cross-coupled terahertz rectangular cavity filter with transmission zeros |
-
2015
- 2015-07-30 CN CN201510456248.3A patent/CN105406159B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1564835A1 (en) * | 2004-02-16 | 2005-08-17 | Siemens Mobile Communications S.p.A. | Inline waveguide filter with up to two out-of-band transmission zeros |
| CN104701593A (en) * | 2015-02-02 | 2015-06-10 | 电子科技大学 | Short millimeter wave stacked type cylindrical cavity filter for restraining parasitic mode |
| CN104795616A (en) * | 2015-04-17 | 2015-07-22 | 电子科技大学 | Cross-coupled terahertz rectangular cavity filter with transmission zeros |
Non-Patent Citations (2)
| Title |
|---|
| 谢善谊: "太赫兹滤波电路研究", 《中国优秀硕士学位论文全文数据库》 * |
| 谭成环等: "一种交叉耦合波导滤波器的快速设计方法", 《2011年通信与信息技术新进展——第八届中国通信学会学术年会论文集》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058390A (en) * | 2016-07-08 | 2016-10-26 | 桂林电子科技大学 | Terahertz band-stop filter for adjustment through electrostatic driving |
| CN106058390B (en) * | 2016-07-08 | 2018-09-11 | 桂林电子科技大学 | A kind of Terahertz bandstop filter being adjusted by electrostatic drive |
| CN111430858A (en) * | 2019-12-08 | 2020-07-17 | 南京航空航天大学 | Duplex filter based on TE103 waveguide mode |
| CN111430858B (en) * | 2019-12-08 | 2021-08-27 | 南京航空航天大学 | Duplex filter based on TE103 waveguide mode |
| CN114430099A (en) * | 2022-01-20 | 2022-05-03 | 电子科技大学 | E-surface terahertz waveguide filter based on novel dual-mode resonant cavity |
| CN114430099B (en) * | 2022-01-20 | 2022-10-14 | 电子科技大学 | E-surface terahertz waveguide filter based on novel dual-mode resonant cavity |
| CN114497941A (en) * | 2022-04-18 | 2022-05-13 | 电子科技大学 | Terahertz waveguide filter based on dual-mode resonant cavity and design method thereof |
| CN114497941B (en) * | 2022-04-18 | 2022-07-26 | 电子科技大学 | Terahertz waveguide filter based on dual-mode resonant cavity and design method thereof |
| CN116345096A (en) * | 2023-05-19 | 2023-06-27 | 电子科技大学 | Terahertz 90-degree waveguide filter coupler with low-amplitude unevenness |
| CN116345096B (en) * | 2023-05-19 | 2023-08-04 | 电子科技大学 | Terahertz 90-degree waveguide filter coupler with low-amplitude unevenness |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105406159B (en) | 2018-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105406159A (en) | TE102 mode CT structure terahertz cross coupling waveguide filter | |
| Szydlowski et al. | Coupled-resonator waveguide filter in quadruplet topology with frequency-dependent coupling–a design based on coupling matrix | |
| CN104701593A (en) | Short millimeter wave stacked type cylindrical cavity filter for restraining parasitic mode | |
| CN114497941B (en) | Terahertz waveguide filter based on dual-mode resonant cavity and design method thereof | |
| CN105489984A (en) | Fractal defected structured quarter-mode substrate integrated waveguide bandpass filter | |
| CN109728389A (en) | A kind of double stacked formula difference microwave band-pass filter with wide stop band structure | |
| CN210956933U (en) | Symmetrical zero structure of dielectric waveguide filter and filter thereof | |
| CN104795616B (en) | A kind of cross-couplings Terahertz rectangular cavities wave filter with transmission zero | |
| CN203839491U (en) | Waveguide filter based on electromagnetically induced transparency | |
| CN103956542B (en) | A kind of broad-band chip integrated waveguide wave filter using U-type groove line | |
| CN104143675B (en) | Cross-linked bandpass filter and its design method | |
| CN113690560B (en) | Dielectric filter, dielectric resonator and communication equipment | |
| CN115966865B (en) | MEMS filter capable of generating out-of-band zero based on three-dimensional stacking and manufacturing method thereof | |
| CN105098304B (en) | Filter and forming method thereof | |
| CN103956541B (en) | One utilizes microstrip line to realize cross-linked substrate integral wave guide filter | |
| CN215816327U (en) | Dielectric filter with improved far-end rejection | |
| CN206271847U (en) | A kind of radio communication Wide stop bands open stub Microstrip Low-Pass | |
| CN112271421B (en) | Glass-based high-isolation three-dimensional duplexer | |
| Glubokov et al. | Compact W-band silicon-micromachined filters with increased fabrication robustness | |
| CN213401455U (en) | Ceramic dielectric filter | |
| CN211320273U (en) | Dielectric waveguide filter capable of realizing single out-of-band transmission zero | |
| CN110380172B (en) | Double-layer stacked differential dual-passband microwave band-pass filter | |
| CN110176660B (en) | Double-layer stacked differential microwave band-pass filter based on higher order mode | |
| CN211530150U (en) | Double-mode ceramic dielectric filter | |
| CN210443647U (en) | Capacitive coupling structure and dielectric filter using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180112 Termination date: 20200730 |