CN104934332A - 一种铜铝复合薄膜生产工艺 - Google Patents
一种铜铝复合薄膜生产工艺 Download PDFInfo
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- CN104934332A CN104934332A CN201510211251.9A CN201510211251A CN104934332A CN 104934332 A CN104934332 A CN 104934332A CN 201510211251 A CN201510211251 A CN 201510211251A CN 104934332 A CN104934332 A CN 104934332A
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- film
- aluminium
- copper
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- aluminum
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 10
- 239000010949 copper Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 239000002131 composite material Substances 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 16
- -1 Copper-Aluminum compound Chemical class 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 6
- 239000002985 plastic film Substances 0.000 claims description 6
- 229920006255 plastic film Polymers 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 238000003851 corona treatment Methods 0.000 claims description 4
- 238000003912 environmental pollution Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种铜铝复合薄膜生产工艺,其工艺步骤如下:原材料筛选:选取35%PET塑料、25%聚丙烯、30%乙酰乙酸乙酯树脂和10%甲酸乙二醇酯,融化、改性、挤出流延、冷却、电晕处理、切除废边卷取,制成PET保护膜,本发明工艺合理、简洁,大大缩短工艺流程,效率高,速度快,原料选择合理,成本较低,可快速降解,减少环境污染。
Description
技术领域
本发明涉及薄膜领域,特别涉及一种铜铝复合薄膜生产工艺。
背景技术
铝作为一种稳定的低电阻率的金属,被广泛用于芯片后段的金属互连线路或者与后续封装线连接的接触垫 ;其中,晶须是指在颗粒(grain)边缘由于应力效应凸起的须状的缺陷。
虽然高温的铝颗粒(grain)大、电阻率低,且填充性能与可靠性好,但在沉积较厚(大于 1000埃)的铝薄膜时,由于铝(Al)薄膜与 SiO2 层的热膨胀系数存在较大差异,而沉积过程中产生的热应力会随着膜厚的增加不断累积,当达到到一定程度时在铝颗粒边缘会有铝钻出来,形成晶须状的缺陷(晶须),从而造成产品良率的降低。
发明内容
本发明所要解决的技术问题是提供一种铜铝复合薄膜生产工艺,以解决现有技术中导致的上述多项缺陷。
为实现上述目的,本发明提供以下的技术方案:一种铜铝复合薄膜生产工艺,其工艺步骤如下:
(1)依次采用低温沉积第一铜薄膜和第一氮化铜薄膜覆盖所述硅衬底的上表面;
(2)采用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
(3)采用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
(4)用压辊进行平整;
(5)晕处理机进行电晕处理;
(6)将铝薄膜两边废边切除并卷取包装。
优选的,所述步骤(1)中,所述低温为30-45℃。
优选的,所述步骤(2)中,所述低温为35-50℃,高温为60-75℃。
采用以上技术方案的有益效果是:本发明提出一种铝薄膜制备工艺,通过优化铝薄膜的沉积条件,改善了铝颗粒(grain)的成长过程,从而有效的减少晶须缺陷的产生,进而提高产品的良率。
具体实施方式
下面详细说明本发明的优选实施方式。
出示本发明的具体实施方式:
一种铜铝复合薄膜生产工艺,其工艺步骤如下:
(1)依次采用低温沉积第一铜薄膜和第一氮化铜薄膜覆盖所述硅衬底的上表面;
(2)用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
(3)用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
(4)压辊进行平整;
(5)处理机进行电晕处理;
(6)铝薄膜两边废边切除并卷取包装。
优选的,所述步骤(1)中,所述低温为30-45℃。
优选的,所述步骤(2)中,所述低温为35-50℃,高温为60-75℃。
采用以上技术方案的有益效果是:,本发明提出一种铝薄膜制备工艺,通过优化铝薄膜的沉积条件,改善了铝颗粒(grain)的成长过程,从而有效的减少晶须缺陷的产生,进而提高产品的良率。
以上所述的仅是本发明的优选实施方式,应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (3)
1.一种铜铝复合薄膜生产工艺,其特征在于,其工艺步骤如下:
依次采用低温沉积第一铜薄膜和第一氮化铜薄膜覆盖所述硅衬底的上表面;
采用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
采用低温沉积第一铝薄膜后,采用高温沉积第二铝薄膜覆盖所述第一铝薄膜的上表面,形成铝层;
使用压辊进行平整;
电晕处理机进行电晕处理;
将铝薄膜两边废边切除并卷取包装。
2.根据权利要求1所述的一种铜铝复合薄膜生产工艺,其特征在于,所述步骤(1)中,所述低温为30-45℃。
3.根据权利要求1所述的一种铜铝复合薄膜生产工艺,其特征在于,所述步骤(2)中,所述低温为35-50℃,高温为60-75℃。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1234606A (zh) * | 1998-04-21 | 1999-11-10 | 株式会社东芝 | 用于制造BEOL布线的小接触通孔的高生产率Al-Cu薄膜溅射工艺 |
CN102709180A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 一种铝薄膜的制备工艺 |
CN103361621A (zh) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | 一种用于沉积厚铝铜薄膜层的方法 |
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- 2015-04-29 CN CN201510211251.9A patent/CN104934332A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1234606A (zh) * | 1998-04-21 | 1999-11-10 | 株式会社东芝 | 用于制造BEOL布线的小接触通孔的高生产率Al-Cu薄膜溅射工艺 |
CN103361621A (zh) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | 一种用于沉积厚铝铜薄膜层的方法 |
CN102709180A (zh) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | 一种铝薄膜的制备工艺 |
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