CN104914638A - 一种液晶显示面板及其阵列基板 - Google Patents
一种液晶显示面板及其阵列基板 Download PDFInfo
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Abstract
本发明公开了一种液晶显示面板及其阵列基板。该阵列基板包括:第一玻璃基板;第一金属层,设置在第一玻璃基板上,用于形成扫描线以及薄膜场效应管的栅极区;第一绝缘层,设置在第一金属层上;半导体层,设置在第一绝缘层上,用于形成薄膜场效应管的沟道;第二金属层,设置在半导体层上,用于形成薄膜场效应管的源极区、漏极区以及数据线;色阻层,设置在第二金属层和第一绝缘层上,用于形成彩色滤光片;像素电极层,设置在色阻层上,通过色阻层上的通孔与薄膜场效应管的漏极区连接,用于形成像素电极;钝化层,设置在像素电极层上;以及黑色矩阵层,设置在钝化层上,用于形成黑色矩阵。通过以上方式,本发明能够减少制程工序,降低成本。
Description
技术领域
本发明涉及液晶显示技术领域,特别是涉及一种液晶显示面板及其阵列基板。
背景技术
液晶显示器是目前使用最广泛的一种平板显示器,已经逐渐成为各种电子设备如移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕所广泛应用具有高分辨率彩色屏幕的显示器。随着液晶显示器技术的发展进步,人们对液晶显示器的显示品质、外观设计、人机界面等提出了更高的要求,触控技术因具有操作方便,高度集成等特点成为技术发展的热点。
目前普遍采用的液晶显示器,通常有上下衬底和中间液晶层组成,衬底有玻璃和电极等组成。若上下衬底都有电极,可以形成纵向电场模式的显示器,如TN(Twist Nematic,扭曲向列)模式,VA(VerticalAlignment,垂直对准)模式,以及为了解决视角过窄开发的MVA(Multi-domain Vertical Alignment,多畴垂直配向)。另外一类与上述显示器不同,电极只位于衬底的一侧,形成横向电场模式的显示器,如IPS(In-plane switching,平面转换)模式、FFS(Fringe Field Switching,边缘场开关)模式等。但是,现有技术的液晶显示器的制程工序复杂,导致成本高。
发明内容
本发明实施例提供了一种液晶显示面板及其阵列基板,能够减少制程工序,降低成本。
本发明提供一种阵列基板,其包括:
第一玻璃基板;
第一金属层,设置在第一玻璃基板上,用于形成扫描线以及薄膜场效应管的栅极区;
第一绝缘层,设置在第一金属层上;
半导体层,设置在第一绝缘层上,用于形成薄膜场效应管的沟道;
第二金属层,设置在半导体层上,用于形成薄膜场效应管的源极区、漏极区以及数据线;
色阻层,设置在第二金属层和第一绝缘层上,用于形成彩色滤光片;
像素电极层,设置在色阻层上,通过色阻层上的通孔与薄膜场效应管的漏极区连接,用于形成像素电极;
钝化层,设置在像素电极层上;
以及黑色矩阵层,设置在钝化层上,用于形成黑色矩阵;
其中,黑色矩阵与彩色滤光片和像素电极对应设置。
其中,阵列基板还包括公共电极层,设置在钝化层和黑色矩阵层上,用于形成公共电极。
其中,公共电极覆盖黑色矩阵层。
其中,黑色矩阵层的材料包括低反射的金属或合金。
其中,阵列基板还包括感光间隙子,设置在黑色矩阵所对应的公共电极上,用于支撑分子间隙。
本发明还提供一种液晶显示面板,其包括液晶显示面板包括阵列基板、第二玻璃基板以及设置在阵列基板和第二玻璃基板之间的液晶层,其中阵列基板包括:
第一玻璃基板;
第一金属层,设置在第一玻璃基板上,用于形成扫描线以及薄膜场效应管的栅极区;
第一绝缘层,设置在第一金属层上;
半导体层,设置在第一绝缘层上,用于形成薄膜场效应管的沟道;
第二金属层,设置在半导体层上,用于形成薄膜场效应管的源极区、漏极区以及数据线;
色阻层,设置在第二金属层和第一绝缘层上,用于形成彩色滤光片;
像素电极层,设置在色阻层上,通过色阻层上的通孔与薄膜场效应管的漏极区连接,用于形成像素电极;
钝化层,设置在像素电极层上;
以及黑色矩阵层,设置在钝化层上,用于形成黑色矩阵;
其中,黑色矩阵与彩色滤光片和像素电极对应设置。
其中,阵列基板还包括公共电极层,设置在钝化层和黑色矩阵层上,用于形成公共电极。
其中,公共电极覆盖黑色矩阵层。
其中,黑色矩阵层的材料包括低反射的金属或合金。
其中,阵列基板还包括感光间隙子,设置在黑色矩阵所对应的公共电极上,用于支撑分子间隙。
通过上述方案,本发明的有益效果是:本发明通过在第一玻璃基板上依次设置第一金属层、第一绝缘层、半导体层、第二金属层、色阻层、像素电极层、钝化层以及黑色矩阵层,能够提高色阻层、黑色矩阵层以及像素电极层之间的对位精度,减少制程工序,降低成本。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。其中:
图1是本发明第一实施例的阵列基板的结构示意图;
图2是图1中的薄膜场效应管的结构示意图;
图3是图1中的阵列基板的制程工艺的流程图;
图4是本发明第二实施例的液晶显示面板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参见图1所示,图1是本发明第一实施例的阵列基板的结构示意图。如图1所示,本实施例所揭示的阵列基板10包括:第一玻璃基板(glass)11、薄膜场效应管(TFT)12、色阻层(R/G/B layer)13、像素电极层(Pixel ITO)14、钝化(PV)层15、黑色矩阵层(BM)16、公共电极层(TITO)17以及感光间隙子(PS)18。
薄膜场效应管12设置在第一玻璃基板11上,如图2所示。薄膜场效应管12包括第一金属层121、第一绝缘层122、半导体层123以及第二金属层124,其中第一金属层121设置在第一玻璃基板11上,用于形成扫描线以及薄膜场效应管12的栅极区,第一金属层121的材料优选为铬、钼、铝或者铜等。第一绝缘层122设置在第一金属层121上,第一绝缘层122优选为氮化硅层等。半导体层123设置在第一绝缘层122上,用于形成薄膜场效应晶体管12的沟道,半导体层123优选为非晶硅层。第二金属层124设置在半导体层123上,用于形成薄膜场效应管12的源极区、漏极区以及数据线,第二金属层124的材料优选为铬、钼、铝或者铜等。
色阻层13设置在第二金属层124和第一绝缘层122上,用于形成彩色滤光片,色阻层13优选包括R色阻、G色阻以及B色阻。色阻层13的相邻两个色阻之间形成一个通孔131。在其他实施例中,色阻层13包括R色阻、G色阻、B色阻以及W色阻。像素电极层14设置在色阻层13上,并通过色阻层13的通孔131与薄膜场效应管12的漏极区连接,用于形成像素电极。像素电极层14的材料优选为氧化铟锡或者氧化铟锌等。由于色阻层13起到绝缘层的作用,用于减少像素电极层14和薄膜场效应管12之间电容耦合。
钝化层15设置在像素电极层14上,黑色矩阵层16设置在钝化层15上,用于形成黑色矩阵,即黑色矩阵设置在通孔131的正上方。本实施例通过将色阻层13和黑色矩阵层16设置在第一玻璃基板11上,能够增加开口率以及增大光透过率和对比度。其中,黑色矩阵与彩色滤光片和像素电极对应设置,能够提高色阻层13、黑色矩阵层16以及像素电极层14之间的对位精度,并且大幅减少黑色矩阵层16与像素电极层14的交叠区域,以使像素的开口率大幅提升。
公共电极层17设置在钝化层15和黑色矩阵层16上,用于形成公共电极。其中,公共电极层17、钝化层15以及像素电极层14形成FFS像素电极结构。公共电极覆盖黑色矩阵层16,黑色矩阵层16的材料优选为低反射的金属或合金,能够实现黑色矩阵的作用。
当触控功能集成在阵列基板10上,在触摸驱动扫描时黑色矩阵层16用于触控传感的外连接线;在液晶驱动时,黑色矩阵层16连接公共电极。
感光间隙子18设置在黑色矩阵所对应的公共电极上,用于支撑分子间隙(cell gap)。即感光间隙子18设置在覆盖黑色矩阵层16的公共电极层17上。
以下描述阵列基板10的制程工艺,如图3所示。阵列基板10的制程工艺依次为:薄膜场效应管(TFT)12-色阻层(R/G/B layer)13-像素电极层(Pixel ITO)14-钝化层(PV)15-黑色矩阵层(BM)16-公共电极层(TITO)17-感光间隙子(PS)18。其中,不同的薄膜场效应管12采用不同的制程工艺。
本实施例通过在第一玻璃基板11上依次设置第一金属层121、第一绝缘层122、半导体层123、第二金属层124、色阻层13、像素电极层14、钝化层15以及黑色矩阵层16,能够提高色阻层13、黑色矩阵层16以及像素电极层14之间的对位精度,减少制程工序,降低成本。
本发明还提供一种液晶显示面板,本实施例所揭示的液晶显示面板30包括阵列基板31、第二玻璃基板32以及设置在阵列基板31和第二玻璃基板32之间的液晶层33,如图4所示。其中,阵列基板31与上述实施例所揭示的阵列基板10相同,在此不再赘述。
综上所述,本发明通过在第一玻璃基板上依次设置第一金属层、第一绝缘层、半导体层、第二金属层、色阻层、像素电极层、钝化层以及黑色矩阵层,能够提高色阻层、黑色矩阵层以及像素电极层之间的对位精度,减少制程工序,降低成本。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (10)
1.一种阵列基板,其特征在于,所述阵列基板包括:
第一玻璃基板;
第一金属层,设置在所述第一玻璃基板上,用于形成扫描线以及薄膜场效应管的栅极区;
第一绝缘层,设置在所述第一金属层上;
半导体层,设置在所述第一绝缘层上,用于形成所述薄膜场效应管的沟道;
第二金属层,设置在所述半导体层上,用于形成所述薄膜场效应管的源极区、漏极区以及数据线;
色阻层,设置在所述第二金属层和所述第一绝缘层上,用于形成彩色滤光片;
像素电极层,设置在所述色阻层上,通过所述色阻层上的通孔与所述薄膜场效应管的漏极区连接,用于形成像素电极;
钝化层,设置在所述像素电极层上;
以及黑色矩阵层,设置在所述钝化层上,用于形成黑色矩阵;
其中,所述黑色矩阵与所述彩色滤光片和所述像素电极对应设置。
2.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括公共电极层,设置在所述钝化层和黑色矩阵层上,用于形成公共电极。
3.根据权利要求2所述的阵列基板,其特征在于,所述公共电极覆盖所述黑色矩阵层。
4.根据权利要求1-3任意一项所述的阵列基板,其特征在于,所述黑色矩阵层的材料包括低反射的金属或合金。
5.根据权利要求4所述的阵列基板,其特征在于,所述阵列基板还包括感光间隙子,设置在所述黑色矩阵所对应的公共电极上,用于支撑分子间隙。
6.一种液晶显示面板,其特征在于,所述液晶显示面板包括阵列基板、第二玻璃基板以及设置在所述阵列基板和所述第二玻璃基板之间的液晶层,其中所述阵列基板包括:
第一玻璃基板;
第一金属层,设置在所述第一玻璃基板上,用于形成扫描线以及薄膜场效应管的栅极区;
第一绝缘层,设置在所述第一金属层上;
半导体层,设置在所述第一绝缘层上,用于形成所述薄膜场效应管的沟道;
第二金属层,设置在所述半导体层上,用于形成所述薄膜场效应管的源极区、漏极区以及数据线;
色阻层,设置在所述第二金属层和所述第一绝缘层上,用于形成彩色滤光片;
像素电极层,设置在所述色阻层上,通过所述色阻层上的通孔与所述薄膜场效应管的漏极区连接,用于形成像素电极;
钝化层,设置在所述像素电极层上;
以及黑色矩阵层,设置在所述钝化层上,用于形成黑色矩阵;
其中,所述黑色矩阵与所述彩色滤光片和所述像素电极对应设置。
7.根据权利要求6所述的液晶显示面板,其特征在于,所述阵列基板还包括公共电极层,设置在所述钝化层和黑色矩阵层上,用于形成公共电极。
8.根据权利要求7所述的液晶显示面板,其特征在于,所述公共电极覆盖所述黑色矩阵层。
9.根据权利要求6-8任意一项所述的液晶显示面板,其特征在于,所述黑色矩阵层的材料包括低反射的金属或合金。
10.根据权利要求9所述的液晶显示面板,其特征在于,所述阵列基板还包括感光间隙子,设置在所述黑色矩阵所对应的公共电极上,用于支撑分子间隙。
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