CN104903991B - 在活性等离子中用于原位测量的高温传感器晶片 - Google Patents

在活性等离子中用于原位测量的高温传感器晶片 Download PDF

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Publication number
CN104903991B
CN104903991B CN201480004168.8A CN201480004168A CN104903991B CN 104903991 B CN104903991 B CN 104903991B CN 201480004168 A CN201480004168 A CN 201480004168A CN 104903991 B CN104903991 B CN 104903991B
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China
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substrate
bracket
shell
module
assembly
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Chinese (zh)
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CN104903991A (zh
Inventor
梅·孙
厄尔·詹森
伐汉特·奎利
史帝芬·夏瑞特
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/08—Protective devices, e.g. casings
    • G01K1/12—Protective devices, e.g. casings for preventing damage due to heat overloading
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2215/00—Details concerning sensor power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201480004168.8A 2013-01-07 2014-01-06 在活性等离子中用于原位测量的高温传感器晶片 Active CN104903991B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811367416.1A CN109781281A (zh) 2013-01-07 2014-01-06 在活性等离子中用于原位测量的高温传感器晶片

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361749872P 2013-01-07 2013-01-07
US61/749,872 2013-01-07
US13/787,178 2013-03-06
US13/787,178 US9222842B2 (en) 2013-01-07 2013-03-06 High temperature sensor wafer for in-situ measurements in active plasma
PCT/US2014/010349 WO2014107665A1 (en) 2013-01-07 2014-01-06 High temperature sensor wafer for in-situ measurements in active plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811367416.1A Division CN109781281A (zh) 2013-01-07 2014-01-06 在活性等离子中用于原位测量的高温传感器晶片

Publications (2)

Publication Number Publication Date
CN104903991A CN104903991A (zh) 2015-09-09
CN104903991B true CN104903991B (zh) 2018-12-11

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CN201480004168.8A Active CN104903991B (zh) 2013-01-07 2014-01-06 在活性等离子中用于原位测量的高温传感器晶片
CN201811367416.1A Pending CN109781281A (zh) 2013-01-07 2014-01-06 在活性等离子中用于原位测量的高温传感器晶片

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Country Link
US (1) US9222842B2 (enExample)
JP (1) JP6184518B2 (enExample)
KR (1) KR101972202B1 (enExample)
CN (2) CN104903991B (enExample)
TW (1) TWI601220B (enExample)
WO (1) WO2014107665A1 (enExample)

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US10228290B2 (en) 2016-04-13 2019-03-12 Board Of Regents, The University Of Texas System Systems and methods for wireless temperature sensing
US10651095B2 (en) * 2016-08-11 2020-05-12 Applied Materials, Inc. Thermal profile monitoring wafer and methods of monitoring temperature
US20180366354A1 (en) 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
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TWI782072B (zh) 2017-08-17 2022-11-01 日商東京威力科創股份有限公司 工業製造設備中特性的即時感測裝置和方法
KR102010448B1 (ko) * 2017-09-20 2019-08-13 (주)에스엔텍 가스 유량 센서 및 가스 유량 측정 장치
KR20190133926A (ko) 2018-05-24 2019-12-04 한국과학기술원 웨이퍼형 복합 무선 센서 및 이를 이용한 웨이퍼 처리 챔버 센싱 방법
US11646210B2 (en) 2018-06-18 2023-05-09 Tokyo Electron Limited Reduced interference, real-time sensing of properties in manufacturing equipment
US10916411B2 (en) 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching
KR102136466B1 (ko) * 2018-09-11 2020-07-22 주식회사 이큐셀 고온 공정 진단이 가능한 웨이퍼 센서
US11371892B2 (en) * 2019-06-28 2022-06-28 Fluke Corporation Platinum resistance temperature sensor having floating platinum member
KR102382971B1 (ko) * 2019-11-05 2022-04-05 이트론 주식회사 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법
US11589474B2 (en) 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
KR20250045782A (ko) * 2023-09-26 2025-04-02 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법

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US20060065941A1 (en) * 2004-09-28 2006-03-30 Commissariat A L'energie Atomique Encapsulation component for integrated micro electromechanical systems and fabrication process of the component
JP2010127657A (ja) * 2008-11-25 2010-06-10 Panasonic Electric Works Co Ltd 赤外線センサおよびその製造方法

Also Published As

Publication number Publication date
US9222842B2 (en) 2015-12-29
CN109781281A (zh) 2019-05-21
TWI601220B (zh) 2017-10-01
KR101972202B1 (ko) 2019-04-24
WO2014107665A1 (en) 2014-07-10
US20140192840A1 (en) 2014-07-10
CN104903991A (zh) 2015-09-09
TW201442131A (zh) 2014-11-01
KR20150104145A (ko) 2015-09-14
JP6184518B2 (ja) 2017-08-23
JP2016505218A (ja) 2016-02-18

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