CN104900588B - 阵列基板的制备方法 - Google Patents
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明公开了一种阵列基板的制备方法,包括:在衬底基板的上方形成栅极和栅线;在栅极和栅线上方形成栅绝缘层;在栅绝缘层上形成像素电极;在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔,第一连接孔以供扫描信号走线与栅线连接。本发明的技术方案通过在栅绝缘层上形成第一连接孔之前先完成了像素电极的制备,以利用像素电极对位于显示区域的大部分栅绝缘层进行保护,因此在对栅绝缘层进行刻蚀形成第一连接孔过程中,可在像素电极上方保留很薄的一层光刻胶或者完全去除光刻胶,从而可使得在经过曝光和显影工艺后残留在栅极绝缘层上的量减少。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种阵列基板的制备方法。
背景技术
阵列基板是液晶显示装置的重要组件,其是通过多道构图工序以在衬底基板上沉积各种膜层,从而得以制备出来的。现有技术中阵列基板的制备流程大致如下:
首先在衬底基板上形成栅极和栅线;然后再栅极和栅线上沉积一层栅绝缘层;接着利用构图工艺在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔,该第一连接孔以供后续工艺形成的扫描信号走线(用于向栅线输出扫描驱动信号)与栅线连接,接收;再然后在栅绝缘层的上方进行像素电极的制备、有源层的制备、源/漏极的制备等等其他的工序。
其中,在利用构图工艺在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔的过程中,需要先在栅绝缘层上涂布一整层的光刻胶,然后利用相应的掩膜板对光刻胶进行曝光和显影工艺,以使得位于非显示区域内且对应栅线的位置的光刻胶区域,接着对栅绝缘层进行刻蚀以形成第一连接孔,最后对残留在栅绝缘层上的光刻胶采用剥离液进行剥离处理。
然而,在对栅绝缘层上残留的光刻胶进行剥离处理时发现,由于第一连接孔仅仅是位于非显示区域,因此在进行显影处理之后,残留在栅绝缘层上的光刻胶(位于整个显示区域和部分非显示区域)的量比较大,从而使得进行剥离处理时使用的剥离液的量比较多,且很难将这些残留的光刻胶去除,进而影响后续工艺的进行。
发明内容
本发明提供一种阵列基板的制备方法,可使得在栅绝缘层上形成第一连接孔的过程中,有效的减小剥离液的使用量,同时还能有效的使得残留在栅绝缘层上的光刻胶经过剥离处理后会被完全去除。
为实现上述目的,本发明提供了一种阵列基板的制备方法,包括:
在衬底基板的上方形成栅极和栅线;
在所述栅极和所述栅线上方形成栅绝缘层;
在所述栅绝缘层上形成像素电极;
在所述栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔,所述第一连接孔以供扫描信号走线与栅线连接。
可选地,所述在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔的步骤包括:
在所述像素电极和所述栅绝缘层的上方涂布一层光刻胶;
利用掩膜板对所述光刻胶进行曝光和显影工艺,以使得在显示区域内位于所述像素电极上方的光刻胶部分去除或完全去除,在所述非显示区域内且对应于所述栅线的位置的上方的光刻胶完全去除;
对所述栅绝缘层进行刻蚀,以在所述栅绝缘层上位于非显示区域内且对应所述栅线的位置形成所述第一连接孔;
将残留的光刻胶进行剥离。
可选地,所述光刻胶为正性光刻胶。
可选地,所述对所述栅绝缘层进行刻蚀的步骤中采用的是干法刻蚀。
可选地,所述阵列基板的制备方法还包括:
在所述栅绝缘层上形成有源层;
在所述有源层上形成源极和漏极,在所述栅绝缘层上形成数据线,所述漏极与所述像素电极连接;
在所述源极、所述漏极和所述数据线的上方形成钝化层;
在所述钝化层上位于非显示区域内且对应所述栅线的位置形成第二连接孔,以及在所述钝化层上位于非显示区域内且对应所述数据线的位置形成第三连接孔,所述第二连接孔与所述第一连接孔连通,所述第三连接孔以供数据信号走线与数据线连接。
可选地,所述阵列基板的制备方法还包括:
在所述钝化层的上方形成公共电极。
可选地,所述栅绝缘层的材料为二氧化硅和氮化硅中的至少一种。
可选地,所述像素电极的材料为氧化铟锡和氧化铟锌中的至少一种。
本发明具有以下有益效果:
本发明提供了一种阵列基板的制备方法,其中,在栅绝缘层上形成第一连接孔之前先完成了像素电极的制备,以利用像素电极对位于显示区域的大部分栅绝缘层进行保护,因此在对栅绝缘层进行刻蚀形成第一连接孔过程中,可在像素电极上方保留很薄的一层光刻胶或者完全去除光刻胶,从而可使得在经过曝光和显影工艺后残留在栅极绝缘层上的量减少。
附图说明
图1为本发明实施例提供的一种阵列基板的制备方法的流程图;
图2为在衬底基板的上方形成栅极和栅线的示意图;
图3为在栅极和栅线上方形成栅绝缘层的示意图;
图4为在栅绝缘层上形成像素电极的示意图;
图5为在步骤1042a中经过曝光和显影工艺之后的示意图;
图6为在步骤1043a中形成第一连接孔的示意图;
图7为在步骤1044a中将残留的光刻胶剥离的示意图;
图8为在步骤1042b中经过曝光和显影工艺之后的示意图;
图9为在步骤1043b中形成第一连接孔的示意图;
图10为本发明实施例提供的又一种阵列基板的制备方法的流程图;
图11为对应图10所示制备方法的阵列基板的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图对本发明提供的一种阵列基板的制备方法进行详细描述。
图1为本发明实施例提供的一种阵列基板的制备方法的流程图,如图1所示,该阵列基板的制备方法,包括:
步骤101:在衬底基板的上方形成栅极和栅线。
图2为在衬底基板的上方形成栅极和栅线的示意图,如图2所示,本实施例中的阵列基板包括显示区域和围绕在显示区域四周的非显示区域,在步骤101中,通过一次构图工艺以在衬底基板1的上方形成栅极2和栅线3,其中该栅线3会贯穿显示区域和非显示区域。
需要说明的是,本申请中的构图工艺具体是指包含了光刻胶涂布、曝光、显影、刻蚀、光刻胶剥离等工序。
步骤102:在栅极和栅线上方形成栅绝缘层。
图3为在栅极和栅线上方形成栅绝缘层的示意图,如图3所示,在步骤102中,通过气相沉积技术以在步骤101所制备出的基板的上方沉积一层栅绝缘层4。
可选地,本实施例中的栅绝缘层4的材料可以为二氧化硅和氮化硅中的至少一种。
步骤103:在栅绝缘层上形成像素电极。
图4为在栅绝缘层上形成像素电极的示意图,如图4所示,在步骤103中,通过构图工艺以在栅绝缘层4上形成像素电极5。可选地,像素电极5的材料为氧化铟锡和氧化铟锌中的至少一种。
步骤104:利用构图工艺在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔。
作为步骤104的一种可选方案,可选地,步骤104包括:
步骤1041a:在像素电极和栅绝缘层的上方涂布一层光刻胶。
在步骤1041a中,可选地,该光刻胶可以为正性光刻胶。
步骤1042a:利用掩膜板对光刻胶进行曝光和显影工艺,以使得在显示区域内位于像素电极上方的光刻胶部分去除,在非显示区域内且对应于栅线的位置的上方的光刻胶完全去除。
图5为在步骤1042a中经过曝光和显影工艺之后的示意图,如图5所示,在步骤1042a中所使用到的掩膜板与现有技术用于形成第一连接孔时所使用到的掩膜板的区别在于,在步骤1042a中所使用到的掩膜板为半色调掩膜板,其在对应像素电极5的区域为半透光区域,此时对应像素电极5上方的光刻胶6进行曝光和显影处理之后会部分去除(即位于像素电极上方的光刻胶部分保留)。由于现有技术中经过曝光和显影工艺之后位于栅绝缘层上的光刻胶在显示区域内是完全保留,因此本申请中经过曝光和显影工艺之后残留在栅绝缘层4上方的光刻胶6的量与现有技术相比将会大大减少。
步骤1043a:对栅绝缘层进行刻蚀,以在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔。
图6为在步骤1043a中形成第一连接孔的示意图,如图6所示,该步骤1043a中,通过刻蚀工艺以对栅绝缘层4进行刻蚀,在刻蚀过程中,在光刻胶6的保护下,栅绝缘层4上仅位于非显示区域内且对应栅线3的位置被刻蚀,以形成第一连接孔7,第一连接孔7以供扫描信号走线与栅线3连接。
需要说明的是,即便在步骤1042a中残留在像素电极5上方的光刻胶6的量比较少,但是由于像素电极5的存在,会保护位于像素电极5正下方的栅绝缘层4不会被刻蚀。
可选地,在对栅绝缘层4进行刻蚀时采用的是干法刻蚀工艺。
步骤1044a:将残留的光刻胶进行剥离。
图7为在步骤1044a中将残留的光刻胶剥离的示意图,如图7所示,在步骤1044a中,通过剥离液对光刻胶6进行处理,以使的光刻胶6从基板上脱离。由于在步骤1042a中残留在基板上的光刻胶6的量相对较小,因此在步骤1044a中所需要使用的剥离液的量也会相对较少,与此同时,残留在基板上的光刻胶6也会完全剥离,以降低产品不良的风险。
作为步骤104的又一种优选方案,可选地,步骤104包括:
步骤1041b:在像素电极和栅绝缘层的上方涂布一层光刻胶。
步骤1041b与上述步骤1041a相同,此处不再赘述。
步骤1042b:利用掩膜板对光刻胶进行曝光和显影工艺,以使得在显示区域内位于像素电极上方的光刻胶完全去除,在非显示区域内且对应于栅线的位置的上方的光刻胶完全去除。
图8为在步骤1042b中经过曝光和显影工艺之后的示意图,如图8所示,与上述步骤1042a中所使用的掩膜板不同的是,在步骤1042b中所使用的掩膜板对应像素电极的区域为完全透光区域,此时对应像素电极5上方的光刻胶6进行曝光和显影处理之后会完全去除。因此,在步骤1042b中经过曝光和显影工艺之后残留在栅绝缘层4上方的光刻胶6的量与步骤1042a中经过曝光和显影工艺之后残留在栅绝缘层上方的光刻胶6的量相比,在步骤1042b中残留在栅绝缘层4上方的光刻胶6的量会更少。
步骤1043b:对栅绝缘层进行刻蚀,以在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔。
图9为在步骤1043b中形成第一连接孔的示意图,如图9所示,该步骤1043a中,通过刻蚀工艺以对栅绝缘层4进行刻蚀,在刻蚀过程中,由于等离子体刻蚀气体不会对像素电极进行刻蚀,因此在光刻胶6和像素电极5的保护下,栅绝缘层4上仅位于非显示区域内且对应栅线3的位置被刻蚀,以形成第一连接孔7。
步骤1044b:将残留的光刻胶进行剥离。
在步骤1044b中,由于在步骤1042b中残留在栅绝缘层上方的光刻胶6的量比在步骤1042a中残留在栅绝缘层4上方的光刻胶6的量要少,则在步骤1044b中所使用的剥离液的量也会比步骤1044a中所使用的剥离液的量要少。
图10为本发明实施例提供的又一种阵列基板的制备方法的流程图,图11为对应图10所示制备方法的阵列基板的结构示意图,如图10和11所示,该制备方法不仅包括上述步骤101~步骤104,而且还包括如下步骤:
步骤105:在栅绝缘层上形成有源层。
在步骤105中,通过一次构图工艺以在栅绝缘层4的上方形成有源层8。
步骤106:在有源层上形成源极和漏极,在栅绝缘层上形成数据线,漏极与像素电极连接。
在步骤106中,通过一次构图工艺以有源层上形成源极9和漏极10以及在栅绝缘层4上形成数据线15,其中,漏极10与像素电极5连接,数据线15纵向穿过显示区域和非显示区域。
步骤107:在源极、漏极和数据线的上方形成钝化层。
在步骤107中,通过气相沉淀技术在步骤106所制备出的基板上沉积一层钝化层11。
步骤108:在钝化层上位于非显示区域内且对应栅线的位置形成第二连接孔,以及在钝化层上位于非显示区域内且对应数据线的位置形成第三连接孔,第二连接孔与第一连接孔连通。
在步骤108中,通过一次构图工艺以形成第二连接孔12和第三连接孔13,其中第二连接孔12与第一连接孔7连通,以供后序形成的扫描信号走线与栅线3连接。第三连接孔13以供数据信号走线与数据线15连接,数据信号走线用于向数据线15传递数据信号。
步骤109:在钝化层的上方形成公共电极。
在步骤109中,通过一次构图工艺以在钝化层的上方形成公共电极14。
需要说明的是,当该阵列基板为TN型显示面板中的阵列基板时,则无需执行上述步骤109。
本发明实施例提供了一种阵列基板的制备方法,其中,在栅绝缘层上形成第一连接孔之前先完成了像素电极的制备,以利用像素电极对位于显示区域的大部分栅绝缘层进行保护,因此在对栅绝缘层进行刻蚀形成第一连接孔过程中,可在像素电极上方保留很薄的一层光刻胶或者完全去除光刻胶,从而可使得在经过曝光和显影工艺后残留在栅极绝缘层上的量减少。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (7)
1.一种阵列基板的制备方法,其特征在于,包括:
在衬底基板的上方形成栅极和栅线;
在所述栅极和所述栅线上方形成栅绝缘层;
在所述栅绝缘层上形成像素电极;
在所述栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔,所述第一连接孔以供扫描信号走线与栅线连接;
所述在栅绝缘层上位于非显示区域内且对应栅线的位置形成第一连接孔的步骤包括:
在所述像素电极和所述栅绝缘层的上方涂布一层光刻胶;
利用掩膜板对所述光刻胶进行曝光和显影工艺,以使得在显示区域内位于所述像素电极上方的光刻胶部分去除或完全去除,在所述非显示区域内且对应于所述栅线的位置的上方的光刻胶完全去除;
对所述栅绝缘层进行刻蚀,以在所述栅绝缘层上位于非显示区域内且对应所述栅线的位置形成所述第一连接孔;
将残留的光刻胶进行剥离。
2.根据权利要求1所述的阵列基板的制备方法,其特征在于,所述光刻胶为正性光刻胶。
3.根据权利要求1所述的阵列基板的制备方法,其特征在于,所述对所述栅绝缘层进行刻蚀的步骤中采用的是干法刻蚀。
4.根据权利要求1所述的阵列基板的制备方法,其特征在于,还包括:
在所述栅绝缘层上形成有源层;
在所述有源层上形成源极和漏极,在所述栅绝缘层上形成数据线,所述漏极与所述像素电极连接;
在所述源极、所述漏极和所述数据线的上方形成钝化层;
在所述钝化层上位于非显示区域内且对应所述栅线的位置形成第二连接孔,以及在所述钝化层上位于非显示区域内且对应所述数据线的位置形成第三连接孔,所述第二连接孔与所述第一连接孔连通,所述第三连接孔以供数据信号走线与数据线连接。
5.根据权利要求4所述的阵列基板的制备方法,其特征在于,还包括:
在所述钝化层的上方形成公共电极。
6.根据权利要求1-5中任一所述的阵列基板的制备方法,其特征在于,所述栅绝缘层的材料为二氧化硅和氮化硅中的至少一种。
7.根据权利要求1-5中任一所述的阵列基板的制备方法,其特征在于,所述像素电极的材料为氧化铟锡和氧化铟锌中的至少一种。
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