CN104900473A - 平行度调节装置及cvd生长膜装置 - Google Patents
平行度调节装置及cvd生长膜装置 Download PDFInfo
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- CN104900473A CN104900473A CN201510202608.7A CN201510202608A CN104900473A CN 104900473 A CN104900473 A CN 104900473A CN 201510202608 A CN201510202608 A CN 201510202608A CN 104900473 A CN104900473 A CN 104900473A
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- 238000009434 installation Methods 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 20
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 9
- 210000002421 cell wall Anatomy 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007363 regulatory process Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3325—Problems associated with coating large area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3326—Problems associated with coating high speed
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510202608.7A CN104900473B (zh) | 2015-04-24 | 2015-04-24 | 平行度调节装置及cvd生长膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510202608.7A CN104900473B (zh) | 2015-04-24 | 2015-04-24 | 平行度调节装置及cvd生长膜装置 |
Publications (2)
Publication Number | Publication Date |
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CN104900473A true CN104900473A (zh) | 2015-09-09 |
CN104900473B CN104900473B (zh) | 2017-04-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201510202608.7A Active CN104900473B (zh) | 2015-04-24 | 2015-04-24 | 平行度调节装置及cvd生长膜装置 |
Country Status (1)
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CN (1) | CN104900473B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114446748A (zh) * | 2020-10-30 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其工作方法 |
CN114558802A (zh) * | 2022-03-10 | 2022-05-31 | 杭州长川科技股份有限公司 | 测压机构及电子元件测试分选机 |
TWI840281B (zh) * | 2022-07-29 | 2024-04-21 | 大陸商北京北方華創微電子裝備有限公司 | 晶圓承載裝置及其調節機構、半導體製程設備 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127822A (ja) * | 1989-10-13 | 1991-05-30 | Fuji Electric Co Ltd | 平行平板型プラズマcvd装置 |
CN1429398A (zh) * | 1999-12-30 | 2003-07-09 | 兰姆研究有限公司 | 应用于等离子体加工系统中的线性驱动系统 |
CN101940067A (zh) * | 2008-02-08 | 2011-01-05 | 朗姆研究公司 | 一种调节等离子体处理系统电极方位和平行度的机构 |
CN202925096U (zh) * | 2012-09-26 | 2013-05-08 | 保定天威薄膜光伏有限公司 | 一种电极间距可调节的模块化pecvd反应内腔体 |
CN103578903A (zh) * | 2012-07-18 | 2014-02-12 | 上海华虹Nec电子有限公司 | 可调电极间距及平行度的刻蚀腔 |
-
2015
- 2015-04-24 CN CN201510202608.7A patent/CN104900473B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127822A (ja) * | 1989-10-13 | 1991-05-30 | Fuji Electric Co Ltd | 平行平板型プラズマcvd装置 |
CN1429398A (zh) * | 1999-12-30 | 2003-07-09 | 兰姆研究有限公司 | 应用于等离子体加工系统中的线性驱动系统 |
CN101940067A (zh) * | 2008-02-08 | 2011-01-05 | 朗姆研究公司 | 一种调节等离子体处理系统电极方位和平行度的机构 |
CN103578903A (zh) * | 2012-07-18 | 2014-02-12 | 上海华虹Nec电子有限公司 | 可调电极间距及平行度的刻蚀腔 |
CN202925096U (zh) * | 2012-09-26 | 2013-05-08 | 保定天威薄膜光伏有限公司 | 一种电极间距可调节的模块化pecvd反应内腔体 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114446748A (zh) * | 2020-10-30 | 2022-05-06 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其工作方法 |
CN114446748B (zh) * | 2020-10-30 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其工作方法 |
CN114558802A (zh) * | 2022-03-10 | 2022-05-31 | 杭州长川科技股份有限公司 | 测压机构及电子元件测试分选机 |
TWI840281B (zh) * | 2022-07-29 | 2024-04-21 | 大陸商北京北方華創微電子裝備有限公司 | 晶圓承載裝置及其調節機構、半導體製程設備 |
Also Published As
Publication number | Publication date |
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CN104900473B (zh) | 2017-04-05 |
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Effective date of registration: 20210126 Address after: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee after: Beijing Huihong Technology Co.,Ltd. Address before: 100176 No.7 Jinxiu street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: APOLLO PRECISION (BEIJING) Ltd. |
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Effective date of registration: 20210929 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee before: Beijing Huihong Technology Co.,Ltd. |
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Effective date of registration: 20240930 Granted publication date: 20170405 |