CN104884918B - 采用各向异性热电材料的激光电源传感器 - Google Patents

采用各向异性热电材料的激光电源传感器 Download PDF

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Publication number
CN104884918B
CN104884918B CN201380051638.1A CN201380051638A CN104884918B CN 104884918 B CN104884918 B CN 104884918B CN 201380051638 A CN201380051638 A CN 201380051638A CN 104884918 B CN104884918 B CN 104884918B
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China
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sensor
layer
laser radiation
sensor element
substrate
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CN201380051638.1A
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English (en)
Chinese (zh)
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CN104884918A (zh
Inventor
R·塞梅拉德
E·克劳斯
J·施洛斯
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Coherent Inc
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Coherent Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00—Measuring quantity of heat
    • G01K17/003—Measuring quantity of heat for measuring the power of light beams, e.g. laser beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN201380051638.1A 2012-10-02 2013-09-27 采用各向异性热电材料的激光电源传感器 Active CN104884918B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261709060P 2012-10-02 2012-10-02
US61/709,060 2012-10-02
US13/944,830 2013-07-17
US13/944,830 US9012848B2 (en) 2012-10-02 2013-07-17 Laser power and energy sensor utilizing anisotropic thermoelectric material
PCT/US2013/062450 WO2014055374A1 (en) 2012-10-02 2013-09-27 Laser power and energy sensor utilizing anisotropic thermoelectric material

Publications (2)

Publication Number Publication Date
CN104884918A CN104884918A (zh) 2015-09-02
CN104884918B true CN104884918B (zh) 2018-01-30

Family

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CN201380051638.1A Active CN104884918B (zh) 2012-10-02 2013-09-27 采用各向异性热电材料的激光电源传感器

Country Status (5)

Country Link
US (2) US9012848B2 (enExample)
EP (1) EP2904360B1 (enExample)
JP (1) JP6279589B2 (enExample)
CN (1) CN104884918B (enExample)
WO (1) WO2014055374A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11879786B1 (en) 2022-12-26 2024-01-23 Shandong University Heat flux sensor

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059346B2 (en) 2012-10-02 2015-06-16 Coherent, Inc. Laser power and energy sensor utilizing anisotropic thermoelectric material
US9012848B2 (en) 2012-10-02 2015-04-21 Coherent, Inc. Laser power and energy sensor utilizing anisotropic thermoelectric material
WO2018063939A1 (en) 2016-09-29 2018-04-05 Coherent, Inc. Laser power and energy sensor using anisotropic thermoelectric material
IT201700070606A1 (it) * 2017-06-23 2018-12-23 Laser Point S R L Rilevatore di radiazione elettromagnetica.
IT201700070601A1 (it) * 2017-06-23 2018-12-23 Laser Point S R L Rilevatore veloce di radiazione elettromagnetica.
CN109103324A (zh) * 2018-06-26 2018-12-28 昆明理工大学 一种热感生电压材料及其应用
LV15536A (lv) * 2019-04-26 2020-11-20 Latvijas Universitātes Cietvielu Fizikas Institūts Ātrdarbīgs redzamās gaismas un infrasarkanā starojuma sensors, tā izgatavošanas paņēmiens
CN110993778A (zh) * 2019-12-13 2020-04-10 西南科技大学 一种基于薄膜横向热电效应的热流传感器
CN111223983B (zh) * 2020-02-28 2023-01-06 昆明先导新材料科技有限责任公司 宽禁带薄膜激光探测元件
CN111710777B (zh) * 2020-07-23 2025-08-26 中国空气动力研究与发展中心超高速空气动力研究所 一种以块状金属为敏感元件基底的新型原子层热电堆热流传感器及其封装工艺
CN113206184B (zh) * 2021-04-30 2023-04-07 河北大学 一种基于硒化铅薄膜的自驱动紫外光探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246055A (zh) * 2008-03-13 2008-08-20 电子科技大学 钽酸锂薄膜红外探测器及制法
CN102047085A (zh) * 2008-11-21 2011-05-04 松下电器产业株式会社 辐射检测器和辐射检测方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3596514A (en) 1968-01-02 1971-08-03 Coherent Radiation Lab Inc Power meter for measurement of radiation
US3851174A (en) * 1973-05-04 1974-11-26 Ibm Light detector for the nanosecond-dc pulse width range
US4082413A (en) 1974-11-29 1978-04-04 The Perkin-Elmer Corporation Selective radiation absorption devices for producing heat energy
DE4306497C2 (de) 1993-03-03 1995-01-05 Hans Dr Lengfellner Thermoelektrischer Detektor zur Detektion von kontinuierlicher und gepulster Strahlung und Verfahren zur Herstellung
JP3623001B2 (ja) 1994-02-25 2005-02-23 住友電気工業株式会社 単結晶性薄膜の形成方法
DE4434904A1 (de) * 1994-09-29 1996-06-05 Max Planck Gesellschaft Thermoelektrische Strahlungsdetektoren auf der Basis perovskitartiger dotierter Schichten und Übergitter
US5678924A (en) 1995-09-25 1997-10-21 Coherent Inc. Power meter head for laser power measurement apparatus
DE19605384C1 (de) 1996-02-14 1997-02-13 Fortech Hts Gmbh Thermoelektrischer Sensor
US6265353B1 (en) 1996-06-05 2001-07-24 Theva Duennschichttechnik Gmbh Device and method for producing a multilayered material
DE19804487C2 (de) 1998-02-05 1999-11-25 Hans Lengfellner Thermoelektrischer Detektor zur Detektion von kontinuierlicher und gepulster Strahlung und Verfahren zur Herstellung
US6361598B1 (en) 2000-07-20 2002-03-26 The University Of Chicago Method for preparing high temperature superconductor
US6518609B1 (en) * 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
JP4135857B2 (ja) 2001-03-27 2008-08-20 独立行政法人産業技術総合研究所 赤外線センサの製造方法
US6579360B2 (en) 2001-07-13 2003-06-17 The University Of Chicago Fabrication of high temperature superconductors
WO2005083808A1 (ja) * 2004-03-01 2005-09-09 Matsushita Electric Industrial Co., Ltd. 熱電変換デバイス、およびこれを用いた冷却方法および発電方法
CN101728019B (zh) * 2004-12-23 2013-08-28 超导技术公司 一种超导制品
JP4078392B1 (ja) 2006-11-10 2008-04-23 松下電器産業株式会社 熱発電素子を用いた発電方法、熱発電素子とその製造方法、ならびに熱発電デバイス
CN102084510B (zh) 2009-02-20 2014-04-16 松下电器产业株式会社 辐射检测器和辐射检测方法
US8871363B2 (en) * 2009-09-03 2014-10-28 National Institute Of Advanced Industrial Science And Technology Resistor film for bolometer
JP2011243824A (ja) * 2010-05-20 2011-12-01 Panasonic Corp 異方的熱電材料とこれを用いた放射検出器および発電デバイス
JP4794693B1 (ja) * 2010-05-27 2011-10-19 パナソニック株式会社 熱電変換デバイス、並びに、放射検出器及びそれを用いた放射検出方法
US9012848B2 (en) 2012-10-02 2015-04-21 Coherent, Inc. Laser power and energy sensor utilizing anisotropic thermoelectric material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246055A (zh) * 2008-03-13 2008-08-20 电子科技大学 钽酸锂薄膜红外探测器及制法
CN102047085A (zh) * 2008-11-21 2011-05-04 松下电器产业株式会社 辐射检测器和辐射检测方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11879786B1 (en) 2022-12-26 2024-01-23 Shandong University Heat flux sensor

Also Published As

Publication number Publication date
CN104884918A (zh) 2015-09-02
WO2014055374A1 (en) 2014-04-10
US20140091304A1 (en) 2014-04-03
JP2015537191A (ja) 2015-12-24
US9012848B2 (en) 2015-04-21
USRE48028E1 (en) 2020-06-02
EP2904360B1 (en) 2019-09-18
EP2904360A1 (en) 2015-08-12
JP6279589B2 (ja) 2018-02-14

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