CN104883077A - Compact three-level IGCT phase module - Google Patents
Compact three-level IGCT phase module Download PDFInfo
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- CN104883077A CN104883077A CN201510292935.6A CN201510292935A CN104883077A CN 104883077 A CN104883077 A CN 104883077A CN 201510292935 A CN201510292935 A CN 201510292935A CN 104883077 A CN104883077 A CN 104883077A
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Abstract
An embodiment of the invention discloses a compact three-level IGCT phase module, which belongs to the technical field of power electronics. The phase module comprises multiple power assemblies, a press-fitting device, and a radiating assembly. The multiple power assemblies include four IGCTs, two clamping diodes, two absorption diodes, and two absorption capacitors. The radiating assembly comprises radiators which are disposed among the multiple power assemblies and used for dissipating heat generated by the power assemblies. The press-fitting device comprises a left pressing plate, supporting columns and a right pressing plate, and is used for press-fitting an overall string structure composed of the four IGCTs, the two clamping diodes, the two absorption diodes and the radiators in a frame formed by the left pressing plate, the supporting columns and the right pressing plate. The string structure is of bilateral symmetry. The two absorption capacitors are disposed in the back of the string structure and symmetrically distributed on the two sides of the string structure. The compact three-level IGCT phase module of the invention has a compact structure and small stray inductance, and the output capacity of the phase module is maximized.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly a kind of compact three level IGCT (Integrated Gate Commutated Thyrisitor, integrated gate commutated thyristor) phase module.
Background technology
Along with developing rapidly of semiconductor device, developed rapidly with the large power all-controlled device that igbt (IGBT), power MOSFET pipe (Power MOSFET), integrated gate commutated thyristor (IGCT) are representative.
The power semiconductor device that integrated gate commutated thyristor (IGCT) is a kind of high efficiency, reliability is high, it is developed by gate turn off thyristor (GTO, Gate Turn-off Thyrisitor).IGCT is a gate level turn-off thyristor (GTO) when opening, and be a transistor when turning off, have the feature that transistor switch speed is fast, switching loss is low and turn on thyristors loss is low, blocking voltage is high, output current is large concurrently, so it integrates the speed-sensitive switch characteristic of igbt (IGBT) and the high blocking voltage of GTO and low conduction loss characteristic.There is the IGCT semiconductor device of two types at present, inverse conductivity type IGCT and asymmetric IGCT.
Neutral point clamper (NPC, Electro-magnetic Interference) tri-level circuit is at present ripe tri-level circuit, have structure simple, use that power device is few, the reliable advantage of technology maturation, high-power without the need to can be realized frequency converter by Tandem devices is exported, because integrated gate commutated thyristor (IGCT) has the advantages such as switching speed is fast, loss is low, blocking voltage is high, output current is large concurrently, IGCT is applied to the fan-out capability then can in the power-phase module of this tri-level circuit with super high power.Complete three level IGCT phase module can comprise IGCT, clamping diode, absorption circuit and radiating subassembly etc.But because IGCT is comparatively harsh to the Spreading requirements of stray inductance in circuit connection, need to arrange each device effectively, cleverly, ensure necessary electric property on the one hand, reduce the stray inductance in loop on the other hand as far as possible, fully take into account each side problems such as the press-fiting of semiconductor element, device heat radiation, engineering maintenance simultaneously, must consider when above variety of problems is all the design of IGCT phase module.Phase module is the integrated of IGCT device application, is also the core component of phase module design, thus design that a kind of structure is simple, stray inductance is little, be convenient to safeguard, the IGCT phase module of mature and reliable is significant.In addition, should be used for from device, mostly the power-phase module based on asymmetric IGCT at present, but it is relatively little based on the semiconductor power phase module of inverse conductivity type IGCT, especially be applied to the phase module of this tri-level circuit, be also necessary so design a kind of inverse conductivity type IGCT phase module with above-mentioned advantage.
Summary of the invention
The invention provides a kind of compact three level IGCT phase module, compact conformation, stray inductance are little, improve the fan-out capability of phase module to greatest extent.
Described technical scheme is as follows:
Embodiments provide a kind of compact three level IGCT phase module, it comprises multiple (PCC) power, press-loading apparatus and radiating subassembly, and multiple (PCC) power comprises four IGCT, two clamp diodes, two absorption diodes and two Absorption Capacitances; Radiating subassembly comprises the radiator between multiple (PCC) power, and the heat that radiator is used for (PCC) power produces distributes; Press-loading apparatus comprises left pressing plate, support column and right pressing plate, press-loading apparatus is used for four IGCT, two clamp diodes, the whole String structure that two absorption diodes and radiator are formed is fitted in the framework built with left pressing plate, support column and right pressing plate, String structure is symmetrical, two Absorption Capacitances are positioned at the rear portion of String structure, are symmetrically distributed in the left and right sides of String structure.
In preferred embodiment of the present invention, described four IGCT are inverse conductivity type IGCT.
In preferred embodiment of the present invention, all electric connecting modes of described phase module inside are connected with described radiator by connecting busbar, all electrical connection busbars of described phase module inside all adopt the busbar that is flexible coupling, the described busbar that is flexible coupling adopts Multilayered copper plate or copper belt to be formed by stacking, described phase module is inner is that boundary is divided into left half-bridge and right half-bridge with neutral point, the connection busbar of described left half-bridge and the connection busbar symmetry of described right half-bridge.
In preferred embodiment of the present invention, the external electrical connection busbar of described phase module comprises positive busbar, negative busbar, exports busbar and neutral point busbar, and the external electrical connection busbar of described phase module all adopts hard copper busbar.
In preferred embodiment of the present invention, described press-loading apparatus also comprises guide pillar, elastic component, press mounting bolt, somely press-fits nut, left transmission cushion block, right transmission cushion block and support column, described guide pillar can move relative to described left pressing plate the deformation quantity affecting described elastic component, described guide pillar has shrinkage pool near one end of described left pressing plate, described shrinkage pool has helicitic texture on inwall, the described press mounting bolt opening penetrated on described left pressing plate is engaged to the helicitic texture in the shrinkage pool of described guide pillar, describedly press-fit nut by described support column and described left pressing plate, right pressing plate firmly fixes together, described elastic component is arranged at the side of described left pressing plate away from guide pillar, self-deformation amount is utilized to transmit pressure assembling force to described (PCC) power, described left transmission cushion block and right transmission cushion block are used for the even transmission carrying out pressure assembling force between described guide pillar and the described (PCC) power that will press-fit.
In preferred embodiment of the present invention, described left pressing plate and right pressing plate are that aluminum alloy materials is made, and described elastic component is disk spring.
In preferred embodiment of the present invention, described left transmission cushion block becomes 90 degree with the cone angle of the conus portion of described right transmission cushion block.
In preferred embodiment of the present invention, described support column is two, described radiating subassembly also comprises the water inlet pipe be fixed on a support column, be fixed on the outlet pipe on another root support column, the flexible pipe be connected with two support columns, the two ends, left and right of described every root support column are provided with screw thread, wherein the screw thread of one end is used for and press-fits fastening nuts and be connected, the screw thread of the other end is used for being connected with water inlet pipe or outlet pipe, every root support column is provided with multiple water interface, each water interface is connected with a radiator by a flexible pipe, each radiator is connected with two support columns respectively by two flexible pipes.
In preferred embodiment of the present invention, between adjacent heat radiation device, be fixed with a (PCC) power.
In preferred embodiment of the present invention, described radiator adopts water-filled radiator or air-cooled radiator.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting the press mounting structure of a whole string by four IGCT, two clamp diodes, two absorption diode symmetries are fitted in together, two Absorption Capacitances are symmetricly set in phase module inside, compact overall structure, electrical connection is symmetrical, stray inductance is little, the ability of IGCT device itself can be given full play to, improve the fan-out capability of phase module to greatest extent, and the structure of embodiment of the present invention press-loading apparatus effectively ensure that the uniformity that the inner pressure assembling force of (PCC) power transmits, ensure that the reliability of (PCC) power work, the structure of radiating subassembly has been taken into account press-loading apparatus and has been supported and cooling heat dissipation function, can not only guaranteed output assembly produce heat can effectively distribute, and make phase module structure compacter.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Fig. 1 is the topological diagram of the tri-level circuit of the three level IGCT phase module that the embodiment of the present invention provides;
Fig. 2 is that the structure of the tri-level circuit of the three level IGCT phase module of Fig. 1 realizes schematic diagram;
Fig. 3 is the schematic perspective view of the three level IGCT phase module that the embodiment of the present invention provides;
Fig. 4 is the front view of the three level IGCT phase module that the embodiment of the present invention provides;
Fig. 5 is the structural representation of the press-loading apparatus of the three level IGCT phase module that the embodiment of the present invention provides;
Fig. 6 is the layout of the radiating subassembly of the three level IGCT phase module that the embodiment of the present invention provides;
Fig. 7 is the structural representation of the support column of the three level IGCT phase module that the embodiment of the present invention provides.
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of compact three level IGCT phase module proposed according to the present invention, structure, feature and effect, be described in detail as follows.
Aforementioned and other technology contents, Characteristic for the present invention, can clearly present in following cooperation describes in detail with reference to graphic preferred embodiment.By the explanation of embodiment, when can to the present invention for the technological means reaching predetermined object and take and effect be able to more deeply and concrete understanding, however institute's accompanying drawings be only to provide with reference to and the use of explanation, be not used for being limited the present invention.
Fig. 1 is the topological diagram of the tri-level circuit of the three level IGCT phase module that the embodiment of the present invention provides.Wherein, the circuit shown in Fig. 1 is the circuit topology figure of the phase in three-phase.Fig. 2 is that the structure of the tri-level circuit of the three level IGCT phase module of Fig. 1 realizes schematic diagram.Fig. 3 is the schematic perspective view of the three level IGCT phase module that the embodiment of the present invention provides.Described IGCT phase module overall structure is symmetrical, have volume compact, commutation circuit stray inductance little, be easy to press-fit and the advantages such as through engineering approaches maintenance, refer to Fig. 1 to Fig. 3, described IGCT phase module comprises multiple (PCC) power, press-loading apparatus 2 and the radiating subassembly between multiple (PCC) power 1.
More specifically, the plurality of (PCC) power comprises four IGCT T1, T2, T3, T4, clamp diode D1, D2, absorption diode D3, D4, Absorption Capacitance C1, C2.
Wherein, the tri-level circuit be made up of (PCC) power as shown in Figure 1, four IGCT T1, T2, T3, T4 is sequentially connected in series between the anode and the anode of absorption diode D4 of absorption diode D3, the negative electrode of absorption diode D3 is successively by Absorption Capacitance C1, the negative electrode of C2 and absorption diode D4 is electrical connected, the negative electrode of clamp diode D1 is electrically connected at IGCT T1, node between T2, the anode of clamp diode D1 is electrically connected at Absorption Capacitance C1, node between C2, the anode of clamp diode D2 is electrically connected at IGCT T3, node between T4, the negative electrode of clamp diode D2 is electrically connected at Absorption Capacitance C1, node between C2.Preferably, in the present embodiment, IGCTT1, T2, T3, T4 are inverse conductivity type IGCT.
Further, tri-level circuit can also comprise peripheral components, such as inductance L 1, L2, resistance R1, R2.Wherein, one end and the IGCT T1 of inductance L 1 are electrical connected, the other end is connected with one end of resistance R1, the other end of resistance R1 is connected to the node between absorption diode D3 and Absorption Capacitance C1, one end and the IGCT T4 of inductance L 2 are electrical connected, the other end is connected with one end of resistance R2, and the other end of resistance R2 is connected to the node between absorption diode D4 and Absorption Capacitance C2.
In the present embodiment, as shown in Figure 2, four IGCT T1, T2, T3, T4, clamp diode D1, D2, absorption diode D3, D4 are linearly arranged in order into a whole String structure and with neutral point NP for boundary is symmetrical, two Absorption Capacitances C1, C2 are arranged on the left and right sides of neutral point NP.
Preferably, in order to strengthen insulation property between different components further, between clamp diode D2 and IGCT T3, between IGCT T2 and clamp diode D1, insulation isolation, namely can arrange insulation strip 6 (as shown in Figure 2) between clamp diode D2 and IGCT T3, between IGCT T2 and clamp diode D1.
The tri-level circuit of the phase module in Fig. 2 is with neutral point NP for boundary can be divided into left half-bridge and right half-bridge, and left half-bridge comprises IGCT T3, T4, clamp diode D2, absorption diode D4, and right half-bridge comprises IGCT T1, T2, clamp diode D1, absorption diode D3.All electric connecting modes of phase module inside and left half-bridge, the electric connecting mode of right half-bridge is connected with radiator by connecting busbar, as shown in Figure 3, the connection busbar of right half-bridge comprises: the connection busbar 11 between clamp diode D1 negative electrode and IGCT T2 anode, connection busbar 15 between clamp diode D1 anode and clamp diode D2 negative electrode, connection busbar 9 between absorption diode D3 negative electrode and Absorption Capacitance C1, connection busbar 12 between Absorption Capacitance C1 and neutral point busbar 14, and the connection busbar full symmetric of the connection busbar of left half-bridge and right half-bridge, namely the connection busbar of left half-bridge can comprise: the connection busbar between clamp diode D2 anode and IGCT T3 negative electrode, connection busbar between clamp diode D1 anode and clamp diode D2 negative electrode, connection busbar between absorption diode D4 anode and Absorption Capacitance C2, connection busbar between Absorption Capacitance C2 and neutral point busbar.The external electrical connection busbar of phase module comprises: DC+ busbar 10 (i.e. positive busbar), DC-busbar 16 (i.e. negative busbar), PH busbar 13 (namely inputing or outputing busbar) and NP busbar 14 (i.e. neutral point busbar).
Wherein, above-mentioned connection busbar is structurally full symmetric, shortening as far as possible under the prerequisite connecting busbar length, can ensure again the symmetrical of left half-bridge, right half-bridge stray inductance well, effectively achieving the coupling of parameter between IGCT.Be reduce as far as possible to connect busbar to the impact of the pressure assembling force of (PCC) power, all electrical connection busbars of phase module inside all adopt the busbar that is flexible coupling simultaneously, and the busbar that is flexible coupling adopts Multilayered copper plate or the very thin copper belt of multi-layered thickness to be formed by stacking.And the external electrical connection busbar of phase module all adopts hard copper busbar to realize, and carries out fastening by insulating part to these hard copper busbars.In addition, for the gate-drive plate of four IGCT T1, T2, T3, T4, for ensuring personal safety, the insulation board 8 of special substance is adopted to carry out isolating and fixing.
Fig. 4 is the front view of the three level IGCT phase module that the embodiment of the present invention provides.As shown in Figure 4, four inverse conductivity type IGCT 7, two neutral-point-clamped diodes 5, two absorption diodes 3, several radiators 102 successively mutual superposition are press-fited into a whole string (PCC) power by press-loading apparatus 2 by phase module, two Absorption Capacitances 4 are arranged on the rear portion of phase module, be symmetrically distributed in the left and right sides of phase module, and the (PCC) power in String structure is closely adjacent successively, make overall arrangement compact, reduce width and the volume of phase module.And this press-loading apparatus 2 effectively ensure that the uniformity that whole string (PCC) power pressure assembling force transmits, and phase module internal electric connected symmetrical dendrimer, stray inductance is little, can give full play to the ability of inverse conductivity type IGCT device itself.The concrete structure of this press-loading apparatus as shown in Figure 5.
Fig. 5 is the structural representation of the press-loading apparatus of the three level IGCT phase module that the embodiment of the present invention provides.Please refer to Fig. 5, press-loading apparatus comprises left pressing plate 202, right pressing plate 207, support column 104 and 105.Preferably, press-loading apparatus can also comprise guide pillar 201, elastic component (such as disk spring 203), securing member (such as press mounting bolt 209, some press-fit nut 208), left transmission cushion block 204, right transmission cushion block 206.Above-mentioned press-loading apparatus is by IGCT 7, clamp diode 5, the whole String structure that absorption diode 3 and radiator are formed is fitted in the framework built with left pressing plate 201, support column 104 and 105, right pressing plate 205, String structure is symmetrical, two Absorption Capacitances 4 are positioned at the rear portion of String structure, are symmetrically distributed in the left and right sides of String structure.
More specifically, left pressing plate 202 and right pressing plate 207 are arranged on String structure two ends, adopt support column 104,105 to be fixedly connected with, to hold and to fix String structure between left pressing plate 202 and right pressing plate 207.Left pressing plate 202 and right pressing plate 207 are preferably aluminum alloy materials and make, so not only can weight reduction, but also it can be kept to have enough strength and stiffness, and the deflection that aluminum alloy materials produces is enough little, can bear the pressure assembling force of (PCC) power.
Guide pillar 201 passes left pressing plate 202 and is fixedly connected with press mounting bolt 209, and guide pillar 201 can move relative to left pressing plate 202 deformation quantity affecting disk spring 203.Guide pillar 201 has shrinkage pool near one end of left pressing plate 202, and shrinkage pool has helicitic texture on inwall.
Press mounting bolt 209 opening penetrated on left pressing plate 202 is engaged to the helicitic texture in the shrinkage pool of guide pillar 201.Press mounting bolt 209 can be arranged in the center of left pressing plate 202.Press mounting bolt 209 needs the transfer bearing the pressure assembling force of (PCC) power, so need to carry out strength check as the case may be, to select suitable bolt specification.
Press-fit together with support column 104,105 firmly fixes with left pressing plate 202, right pressing plate 207 by nut 208, therefore left pressing plate 202 and right pressing plate 207 can be press-fited nut 208 and support column 104,105 firmly fixes.
Elastic component is chosen as disk spring 203, it is arranged around guide pillar 201, disk spring 203 utilizes self-deformation amount to transmit pressure assembling force to (PCC) power, it has certain retractility to eliminate the impact of extraneous vibration on pressure assembling force, to ensure that pressure assembling force continues to remain on unvaryingly in required particular range further simultaneously.
Left transmission cushion block 204, right transmission cushion block 206 are roughly in coniform, and for carrying out the even transmission of pressure assembling force between guide pillar 201 and the (PCC) power that will press-fit, pressure assembling force can balance and pass to String structure uniformly by it.By lot of experiment validation, when the cone angle of the conus portion of left transmission cushion block 204, right transmission cushion block 206 becomes 90 degree, the counterbalance effect of left transmission cushion block 204, right transmission cushion block 206 is best, effectively can ensure the uniformity that whole (PCC) power pressure assembling force transmits.
Support column 104,105 is through left pressing plate 202 and right pressing plate 207.Left pressing plate 202 and right pressing plate 207 carry out fastening and location, even if the vibration of fierceness also not easily has an impact to pressure assembling force by support column 104,105.Preferably, the runner for fluid circulation is provided with in support column 104,105, when runner inside passes into cooling fluid, effectively can take away the heat shed by (PCC) power (i.e. device in the tri-level circuit of phase module), thus be beneficial to (PCC) power better, more stable work.
Fig. 6 is the layout of the radiating subassembly of the three level IGCT phase module that the embodiment of the present invention provides.Fig. 7 is the structural representation of the support column of the three level IGCT phase module that the embodiment of the present invention provides.Please refer to Fig. 6 and Fig. 7, radiating subassembly comprise radiator 102, the water inlet pipe 100 be fixed on a support column 104, the outlet pipe 101 be fixed on another root support column 105, the flexible pipe 103 that is connected with two support columns.
Particularly, a (PCC) power is fixed with between adjacent heat radiation device 102.Radiator 102 makes it stable operation for the heat of (PCC) power in dissipation work.Radiator can adopt water-filled radiator, also can adopt air-cooled radiator.Radiator 102 in the embodiment of the present invention is formed by aluminum alloy material inner disc stainless steel tube entirety casting pressure, radiator 102 two sides are evenly equipped with stainless steel tube, two-side radiation can be carried out, the rear portion of radiator 102 is processed with line bank, can directly be electrically connected, such as, electrical connection and between (PCC) power.
Preferably, support column 104,105 is thick stainless steel tube, can select wherein one for water inlet support column, another root is water outlet support column, if select support column 104 for water inlet support column, then support column 105 is water outlet support column, and the two ends, left and right of support column 104,105 are provided with screw thread 107 for being fixedly connected with, the support column 104 wherein screw thread of one end is used for being connected with fastening nuts, and other end screw thread is used for being connected with water inlet pipe 100.The support column 105 wherein screw thread of one end is used for being connected with fastening nuts, and other end screw thread is used for being connected with outlet pipe 101.Every root support column 104, multiple water interface 109 is provided with on 105, each water interface 109 is connected with a radiator by a flexible pipe, each radiator by two flexible pipes 103 respectively with support column 104, 105 are connected, the wherein flexible pipe that each radiator is connected corresponds to water supply hose, another root flexible pipe corresponds to delivery hose, support column 104, the pressure assembling force of (PCC) power will be born in 105 1 aspects, also the effect of cooling line is served as on the other hand, support column 104, 105 inner logical cooling fluids (such as, deionized water) by distribution several water interfaces 109 (as Fig. 7) thereon and flexible pipe 103 parallel flow through some radiators 102 for (PCC) power dispels the heat, guarantee that the heat of the generation in the power (PCC) power course of work can effectively be taken away.Support column 104,105 has concurrently and press-fits support and cooling water pipe effect, support column 104, to be connected by the flexible pipe of above-mentioned design between 105 with radiator, the electrical design specification of high voltage, big current can be adapted to, the radiating subassembly of unique phase module has been taken into account press-loading apparatus and has been supported and cooling heat dissipation function, ensure that the heat that (PCC) power produces can effectively pass.
Further, will consider two factors when the cross section of support column 104 and support column 105 is chosen: will have enough intensity to bear the pressure assembling force of (PCC) power on the one hand, the linearity of support column 104,105 is very accurate with the uniformity ensureing transmitting force simultaneously; The area of its inner hollow is enough large with the coolant rate met required for phase module heat radiation on the other hand.The layout of support column 104,105 will be considered and spacing between radiator and power device, ensure enough electric clearances, simultaneously support column 104, the flexible pipe 103 that is connected between 105 with radiator will guarantee there is enough length to meet water resistance and creepage distance requirement, to adapt to the electrical design code requirement of high voltage, big current.Preferably, flexible pipe 103 is adopted made of plastic.
Press-fit process and radiation processes the following detailed description of phase module: when press-fiting, first (PCC) power and radiator are superimposed as String structure mutually, and make when guaranteeing spacing distance it parallel to each other.Again String structure is placed between left pressing plate 202 and right pressing plate 207 respectively, the deformation quantity of accurate control disk spring 203, then bolt 209 is screwed in the shrinkage pool of guide pillar 201, the deformation quantity of disk spring 209 is maintained by guide pillar, namely pressure corresponding to deformation quantity be the pressure assembling force that will be delivered on (PCC) power, pressure assembling force is transmitted cushion block be delivered on (PCC) power by guide pillar 201, left and right by the disk spring 209 of deformation, thus completes and press-fit process.During heat radiation, cooling fluid (such as, deionized water) enter support column 104 inside by the water inlet of water inlet pipe 100, and a wherein flexible pipe 103 of each radiator is entered by several water interfaces 109 be distributed on support column 104, disperse to each radiator through flexible pipe 103, cooling fluid converges to another root flexible pipe 103 of radiator complete heat exchange in radiator after, flow out after another root flexible pipe 103 and support column 105 from the delivery port of outlet pipe 101.
In sum, the IGCT phase module that the present embodiment provides, by adopting the press mounting structure of a whole string by four IGCT, two clamp diodes, two absorption diode symmetries are fitted in together, two Absorption Capacitances are symmetricly set in phase module inside, compact overall structure, electrical connection is symmetrical, stray inductance is little, the ability of IGCT device itself can be given full play to, improve the fan-out capability of phase module to greatest extent, and the structure of embodiment of the present invention press-loading apparatus effectively ensure that the uniformity that the inner pressure assembling force of (PCC) power transmits, ensure that the reliability of (PCC) power work, the structure of radiating subassembly has been taken into account press-loading apparatus and has been supported and cooling heat dissipation function, can not only guaranteed output assembly produce heat can effectively distribute, and make phase module structure compacter.
In addition, also had concurrently by support column and press-fit support and cooling water pipe effect, be connected by water interface and flexible pipe between support column with radiator, the electrical design specification of high voltage, big current can be adapted to, and take into account press-loading apparatus to support and cooling heat dissipation function, ensure that the heat that (PCC) power produces can effectively pass.
In addition, the electrical connection of phase module inside all realizes with the busbar that is flexible coupling, and the busbar that is flexible coupling adopts Multilayered copper plate or the very thin copper belt of multi-layered thickness to be formed by stacking, thus reduces and connect busbar and affect the active force of (PCC) power.
In addition, the embodiment of the present invention also adopts inverse conductivity type IGCT, and also solves the problems such as inverse conductivity type IGCT device press-fits, cools, high-voltage isolating well, compact conformation, easy to maintenance, has fully excavated the superior function of inverse conductivity type IGCT device itself.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a compact three level IGCT phase module, comprising:
Multiple (PCC) power, comprises four IGCT, two clamp diodes, two absorption diodes and two Absorption Capacitances;
Radiating subassembly, comprises the radiator between described multiple (PCC) power, and described radiator is used for the heat that described (PCC) power produces to distribute;
Press-loading apparatus, comprise left pressing plate, support column and right pressing plate, described press-loading apparatus is used for described four IGCT, described two clamp diodes, the whole String structure that described two absorption diodes and described radiator are formed is fitted in the framework built with described left pressing plate, described support column and described right pressing plate, described String structure is symmetrical, and two Absorption Capacitances are positioned at the rear portion of described String structure, is symmetrically distributed in the left and right sides of described String structure.
2. compact three level IGCT phase module according to claim 1, is characterized in that, described four IGCT are inverse conductivity type IGCT.
3. compact three level IGCT phase module according to claim 1, it is characterized in that, all electric connecting modes of described phase module inside are connected with described radiator by connecting busbar, all electrical connection busbars of described phase module inside all adopt the busbar that is flexible coupling, the described busbar that is flexible coupling adopts Multilayered copper plate or copper belt to be formed by stacking, described phase module is inner is that boundary is divided into left half-bridge and right half-bridge with neutral point, the connection busbar of described left half-bridge and the connection busbar symmetry of described right half-bridge.
4. compact three level IGCT phase module according to claim 1, it is characterized in that, the external electrical connection busbar of described phase module comprises positive busbar, negative busbar, exports busbar and neutral point busbar, and the external electrical connection busbar of described phase module all adopts hard copper busbar.
5. compact three level IGCT phase module according to claim 1, is characterized in that, described press-loading apparatus also comprises guide pillar, elastic component, press mounting bolt, somely press-fits nut, left transmission cushion block, right transmission cushion block and support column, described guide pillar can move relative to described left pressing plate the deformation quantity affecting described elastic component, described guide pillar has shrinkage pool near one end of described left pressing plate, described shrinkage pool has helicitic texture on inwall, the described press mounting bolt opening penetrated on described left pressing plate is engaged to the helicitic texture in the shrinkage pool of described guide pillar, describedly press-fit nut by described support column and described left pressing plate, right pressing plate firmly fixes together, described elastic component is arranged at the side of described left pressing plate away from guide pillar, self-deformation amount is utilized to transmit pressure assembling force to described (PCC) power, described left transmission cushion block and right transmission cushion block are used for the even transmission carrying out pressure assembling force between described guide pillar and the described (PCC) power that will press-fit.
6. compact three level IGCT phase module according to claim 5, is characterized in that, described left pressing plate and right pressing plate are that aluminum alloy materials is made, and described elastic component is disk spring.
7. compact three level IGCT phase module according to claim 5, is characterized in that, described left transmission cushion block becomes 90 degree with the cone angle of the conus portion of described right transmission cushion block.
8. compact three level IGCT phase module according to claim 5, it is characterized in that, described support column is two, described radiating subassembly also comprises the water inlet pipe be fixed on a support column, be fixed on the outlet pipe on another root support column, the flexible pipe be connected with two support columns, the two ends, left and right of described every root support column are provided with screw thread, wherein the screw thread of one end is used for and press-fits fastening nuts and be connected, the screw thread of the other end is used for being connected with water inlet pipe or outlet pipe, every root support column is provided with multiple water interface, each water interface is connected with a radiator by a flexible pipe, each radiator is connected with two support columns respectively by two flexible pipes.
9. compact three level IGCT phase module according to claim 1, is characterized in that, be fixed with a (PCC) power between adjacent heat radiation device.
10. compact three level IGCT phase module according to claim 1, is characterized in that, described radiator adopts water-filled radiator or air-cooled radiator.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510292935.6A CN104883077B (en) | 2015-06-02 | 2015-06-02 | The level IGCT phase modules of compact three |
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| CN201510292935.6A CN104883077B (en) | 2015-06-02 | 2015-06-02 | The level IGCT phase modules of compact three |
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| Publication Number | Publication Date |
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| CN104883077A true CN104883077A (en) | 2015-09-02 |
| CN104883077B CN104883077B (en) | 2018-03-09 |
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| CN201510292935.6A Active CN104883077B (en) | 2015-06-02 | 2015-06-02 | The level IGCT phase modules of compact three |
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| CN105242149A (en) * | 2015-11-04 | 2016-01-13 | 南车株洲电力机车研究所有限公司 | IGCT phase module circuit with inductor voltage state detection |
| CN106558575A (en) * | 2016-11-18 | 2017-04-05 | 许继电气股份有限公司 | A kind of lightweight compact flexible DC power transmission converter valve and its converter valve components |
| CN106559000A (en) * | 2015-09-30 | 2017-04-05 | 特变电工新疆新能源股份有限公司 | High-power crimping type IGBT converter valve power unit structure |
| CN108075620A (en) * | 2018-01-02 | 2018-05-25 | 清华四川能源互联网研究院 | The power unit structure that a kind of IGCT thyristors are formed |
| CN113395877A (en) * | 2021-06-02 | 2021-09-14 | 江苏云意电气股份有限公司 | Multilayer structure heat dissipation plate of BSG motor inverter and processing method |
| CN113991976A (en) * | 2021-10-29 | 2022-01-28 | 深圳市禾望电气股份有限公司 | Three-level power module |
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| CN106559000A (en) * | 2015-09-30 | 2017-04-05 | 特变电工新疆新能源股份有限公司 | High-power crimping type IGBT converter valve power unit structure |
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| CN113395877A (en) * | 2021-06-02 | 2021-09-14 | 江苏云意电气股份有限公司 | Multilayer structure heat dissipation plate of BSG motor inverter and processing method |
| CN113395877B (en) * | 2021-06-02 | 2022-04-19 | 江苏云意电气股份有限公司 | Multilayer structure heat dissipation plate of BSG motor inverter and processing method |
| CN113991976A (en) * | 2021-10-29 | 2022-01-28 | 深圳市禾望电气股份有限公司 | Three-level power module |
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