CN104883077B - The level IGCT phase modules of compact three - Google Patents
The level IGCT phase modules of compact three Download PDFInfo
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- CN104883077B CN104883077B CN201510292935.6A CN201510292935A CN104883077B CN 104883077 B CN104883077 B CN 104883077B CN 201510292935 A CN201510292935 A CN 201510292935A CN 104883077 B CN104883077 B CN 104883077B
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Abstract
The embodiment of the invention discloses a kind of level IGCT phase modules of compact three, belong to electric and electronic technical field.The phase module includes：Multiple (PCC) powers, press-loading apparatus and radiating subassembly, multiple (PCC) powers include four IGCT, two clamp diodes, two absorption diodes and two Absorption Capacitances；Radiating subassembly includes the radiator between multiple (PCC) powers, and radiator is used to distribute heat caused by (PCC) power；Press-loading apparatus includes left pressing plate, support column and right pressing plate, press-loading apparatus is used for four IGCT, two clamp diodes, the whole String structure that two absorption diodes and radiator are formed is fitted in the framework built with left pressing plate, support column and right pressing plate, String structure is symmetrical, two Absorption Capacitances are located at the rear portion of String structure, are symmetrically distributed in the left and right sides of String structure.The level IGCT phase modules of compact three of the invention are compact-sized, stray inductance is small, improve the fan-out capability of phase module to greatest extent.
Description
Technical field
The present invention relates to electric and electronic technical field, more particularly to a kind of level IGCT (Integrated of compact three
Gate Commutated Thyrisitor, integrated gate commutated thyristor) phase module.
Background technology
With developing rapidly for semiconductor devices, partly led with igbt (IGBT), power metal-oxide
Body FET (Power MOSFET), integrated gate commutated thyristor (IGCT) obtain urgency for the large power all-controlled device of representative
Speed development.
Integrated gate commutated thyristor (IGCT) is the high power semiconductor device of a kind of high efficiency, reliability, and it is by door
Pole cutoff thyristor (GTO, Gate Turn-off Thyrisitor) develops.IGCT is that a gate pole can close when opening
Disconnected IGCT (GTO), and be when off a transistor, has that transistor switch speed is fast, switching loss is low and IGCT concurrently
The characteristics of conduction loss is low, blocking voltage is high, output current is big, so the high speed that it collects igbt (IGBT) is opened
Characteristic and GTO high blocking voltage and low conduction loss characteristic are closed in one.There is two kinds of IGCT semiconductor devices at present,
Inverse conductivity type IGCT and asymmetric IGCT.
Neutral point clamper (NPC, Electro-magnetic Interference) tri-level circuit is presently the most ripe
Tri-level circuit, have it is simple in construction, using the advantages of power device is few, technology maturation is reliable, without passing through Tandem devices
The high-power output of frequency converter can be achieved, switching speed is fast, damages because integrated gate commutated thyristor (IGCT) has concurrently
The advantages that low, blocking voltage is high, output current is big is consumed, IGCT being applied in the power-phase module of the tri-level circuit can then have
There is the fan-out capability of super high power.Complete three level IGCT phase modules can include IGCT, clamp diode, absorption circuit and
Radiating subassembly etc..But in being connected due to IGCT to circuit the Spreading requirements of stray inductance it is more harsh, it is necessary to effectively, cleverly cloth
Each device is put, is on the one hand to ensure necessary electric property, on the other hand reduces the stray inductance in loop as far as possible, while fully
The each side problems such as press fitting, device radiating, engineering maintenance in view of semiconductor element, above variety of problems are all IGCT phase moulds
What block must take into consideration when designing.Phase module is the integrated of IGCT devices application, and the core component of phase module design, so
Design it is a kind of it is simple in construction, stray inductance is small, be easy to safeguard, the IGCT phase modules of mature and reliable it is significant.In addition, from
From the point of view of the application of device, asymmetric IGCT power-phase module, but partly leading based on inverse conductivity type IGCT are all based on greatly at present
Body power-phase module is relatively seldom, is particularly applied to the phase module of the tri-level circuit, so design is a kind of with above-mentioned excellent
The inverse conductivity type IGCT phase modules of point are also necessary.
The content of the invention
The present invention provides a kind of level IGCT phase modules of compact three, compact-sized, stray inductance is small, carries to greatest extent
The fan-out capability of phase module is risen.
The technical scheme is as follows：
The embodiments of the invention provide a kind of level IGCT phase modules of compact three, it includes multiple (PCC) powers, press fitting
Device and radiating subassembly, multiple (PCC) powers include four IGCT, two clamp diodes, two absorption diodes and two suctions
Receive electric capacity；Radiating subassembly includes the radiator between multiple (PCC) powers, and radiator is used for will be hot caused by (PCC) power
Amount distributes；Press-loading apparatus includes left pressing plate, support column and right pressing plate, and press-loading apparatus is used for four IGCT, two clampers
The whole String structure that diode, two absorption diodes and radiator are formed is fitted in left pressing plate, support column and right pressing plate
In the framework built, String structure is symmetrical, and two Absorption Capacitances are located at the rear portion of String structure, are symmetrically distributed in string-like knot
The left and right sides of structure.
In preferred embodiments of the present invention, four IGCT are inverse conductivity type IGCT.
In preferred embodiments of the present invention, all electric connecting modes inside the phase module are by connecting busbar
It is attached with the radiator, all electrical connection busbars inside the phase module are described using the busbar that is flexible coupling
The busbar that is flexible coupling is formed by stacking using Multilayered copper plate or copper belt, inside the phase module using neutral point be boundary be divided into left half-bridge with
Right half-bridge, the connection busbar of the left half-bridge and the connection busbar of the right half-bridge are symmetrical.
In preferred embodiments of the present invention, the external electrical connection busbar of the phase module include positive busbar, negative busbar,
Output busbar and neutral point busbar, the external electrical connection busbar of the phase module use hard copper bus-bar.
In preferred embodiments of the present invention, if the press-loading apparatus also includes guide pillar, elastic component, press mounting bolt, dry-pressing
Loading nut, left transmission cushion block, right transmission cushion block and support column；The guide pillar can be relative to the left pressing plate movement to influence
The deformation quantity of elastic component is stated, the guide pillar has shrinkage pool close to one end of the left pressing plate, and the shrinkage pool has spiral shell on inwall
Line structure, the opening that the press mounting bolt is penetrated on the left pressing plate are engaged to the helicitic texture in the shrinkage pool of the guide pillar, institute
State press-fited nut to be rigidly secured together the support column and the left pressing plate, right pressing plate, the elastic component is arranged at institute
Side of the left pressing plate away from guide pillar is stated, pressure assembling force is transmitted to the (PCC) power, the left transmission cushion block using self-deformation amount
And the right cushion block that transmits is used to carry out uniformly transferring for pressure assembling force between the guide pillar and the (PCC) power to be pressed.
In preferred embodiments of the present invention, the left pressing plate and right pressing plate are made up of aluminum alloy materials, the elastic component
For disk spring.
In preferred embodiments of the present invention, it is described it is left transmit cushion block with it is described it is right transmit cushion block conus portion cone angle into
90 degree.
In preferred embodiments of the present invention, the support column is two, and the radiating subassembly also includes being fixed on one
Water inlet pipe on support column, the outlet pipe being fixed on another support column, the flexible pipe being connected with two support columns, it is described every
The left and right ends of support column are provided with screw thread, and the wherein screw thread of one end is used to be fastenedly connected with press-fited nut, the screw thread of the other end
For being connected with water inlet pipe or outlet pipe, multiple water interfaces are provided with every support column, each water interface passes through a flexible pipe
It is connected with a radiator, each radiator is connected with two support columns respectively by two flexible pipes.
In preferred embodiments of the present invention, a (PCC) power is fixed between adjacent heat radiation device.
In preferred embodiments of the present invention, the radiator uses water-filled radiator or air-cooled radiator.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
It is by using the press mounting structure of a whole string that four IGCT, two clamp diodes, two absorption diodes are symmetrical
It is press fit together, two Absorption Capacitances are symmetricly set in inside phase module, compact overall structure, and electrical connection is symmetrical, stray electrical
Feel small, the ability of IGCT devices in itself can be given full play to, improve the fan-out capability of phase module, and the present invention to greatest extent
The uniformity of pressure assembling force transmission inside (PCC) power has been effectively ensured in the structure of embodiment press-loading apparatus, ensure that (PCC) power work
The reliability of work, the structure of radiating subassembly have taken into account press-loading apparatus support and cooling heat sinking function, can not only ensure power packages
Heat caused by part can be distributed effectively, and make it that phase module structure is compacter.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, and in order to allow the above and other objects, features and advantages of the present invention can
Become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Brief description of the drawings
Fig. 1 is the topological diagram of the tri-level circuit of three level IGCT phase modules provided in an embodiment of the present invention；
Fig. 2 is that the structure of the tri-level circuit of Fig. 1 three level IGCT phase modules realizes schematic diagram；
Fig. 3 is the schematic perspective view of three level IGCT phase modules provided in an embodiment of the present invention；
Fig. 4 is the front view of three level IGCT phase modules provided in an embodiment of the present invention；
Fig. 5 is the structural representation of the press-loading apparatus of three level IGCT phase modules provided in an embodiment of the present invention；
Fig. 6 is the layout of the radiating subassembly of three level IGCT phase modules provided in an embodiment of the present invention；
Fig. 7 is the structural representation of the support column of three level IGCT phase modules provided in an embodiment of the present invention.
Embodiment
Further to illustrate the present invention to reach the technological means and effect that predetermined goal of the invention is taken, below in conjunction with
Accompanying drawing and preferred embodiment, to according to level IGCT phase modules its embodiment of compact proposed by the present invention three, structure,
Feature and effect, describe in detail as after.
For the present invention foregoing and other technology contents, feature and effect, in the following preferable reality coordinated with reference to schema
Applying during example describes in detail to be clearly presented.By the explanation of embodiment, when predetermined mesh can be reached to the present invention
The technological means taken and effect be able to more deeply and it is specific understand, but institute's accompanying drawings are only to provide with reference to saying
It is bright to be used, not it is used for being any limitation as the present invention.
Fig. 1 is the topological diagram of the tri-level circuit of three level IGCT phase modules provided in an embodiment of the present invention.Wherein, Fig. 1
Shown circuit is the circuit topology figure of the phase in three-phase.Fig. 2 is the tri-level circuit of Fig. 1 three level IGCT phase modules
Structure realize schematic diagram.Fig. 3 is the schematic perspective view of three level IGCT phase modules provided in an embodiment of the present invention.The IGCT
Phase module overall structure is symmetrical, have volume compact, commutation circuit stray inductance is small, be easy to be pressed and be engineered safeguard etc. it is excellent
Point, refers to Fig. 1 to Fig. 3, and the IGCT phase modules include multiple (PCC) powers, press-loading apparatus 2 and positioned at multiple (PCC) powers
Between radiating subassembly 1.
More specifically, the plurality of (PCC) power includes four IGCT T1, T2, T3, T4, clamp diode D1, D2, absorb
Diode D3, D4, Absorption Capacitance C1, C2.
Wherein, the tri-level circuit being made up of (PCC) power is as shown in figure 1, four IGCT T1, T2, T3, T4 are sequentially connected in series
It is connected between absorption diode D3 anode and absorption diode D4 anode, absorption diode D3 negative electrode passes sequentially through suction
The negative electrode for receiving electric capacity C1, C2 and absorption diode D4 is electrical connected, clamp diode D1 negative electrode be electrically connected at IGCT T1,
Node between T2, clamp diode D1 anode are electrically connected at the node between Absorption Capacitance C1, C2, clamp diode D2
Anode be electrically connected at node between IGCT T3, T4, clamp diode D2 negative electrode be electrically connected at Absorption Capacitance C1,
Node between C2.Preferably, in the present embodiment, IGCTT1, T2, T3, T4 are inverse conductivity type IGCT.
Further, tri-level circuit can also include peripheral components, such as inductance L1, L2, resistance R1, R2.Wherein, it is electric
Sense L1 one end is electrical connected with IGCT T1, and the other end is connected with resistance R1 one end, and the resistance R1 other end is connected to absorption
Node between diode D3 and Absorption Capacitance C1, inductance L2 one end and IGCT T4 are electrical connected, and the other end is with resistance R2's
One end is connected, and the resistance R2 other end is connected to the node between absorption diode D4 and Absorption Capacitance C2.
In the present embodiment, as shown in Fig. 2 four IGCT T1, T2, T3, T4, clamp diode D1, D2, absorption diode
D3, D4 are linearly arranged in order into a whole String structure and, two Absorption Capacitance C1, C2s symmetrical as boundary using neutral point NP
It is arranged on the neutral point NP left and right sides.
Preferably, in order to further strengthen insulating properties between different components, between clamp diode D2 and IGCT T3,
Be dielectrically separated between IGCT T2 and clamp diode D1, you can between clamp diode D2 and IGCT T3, IGCT T2 and
Insulation strip 6 (as shown in Figure 2) is set between clamp diode D1.
The tri-level circuit of phase module in Fig. 2 can be divided into left half-bridge and right half-bridge, left half-bridge bag by boundary of neutral point NP
IGCT T3, T4, clamp diode D2, absorption diode D4 are included, right half-bridge includes IGCT T1, T2, clamp diode D1, absorbed
Diode D3.All electric connecting modes inside phase module are that left half-bridge, the electric connecting mode of right half-bridge are to pass through connection
Busbar and radiator are attached, as shown in figure 3, the connection busbar of right half-bridge includes：Clamp diode D1 negative electrodes and IGCT
Connection busbar 11 between T2 anodes, connection busbar 15, absorption two between clamp diode D1 anodes and clamp diode D2 negative electrodes
The connection busbar 12 between connection busbar 9, Absorption Capacitance C1 and neutral point busbar 14 between pole pipe D3 negative electrodes and Absorption Capacitance C1, and
And the connection busbar of the connection busbar and right half-bridge of left half-bridge is full symmetric, i.e., the connection busbar of left half-bridge can include：Clamper
Connection busbar between diode D2 anodes and IGCT T3 negative electrodes, between clamp diode D1 anodes and clamp diode D2 negative electrodes
Connect connecting between busbar, Absorption Capacitance C2 and neutral point busbar between busbar, absorption diode D4 anodes and Absorption Capacitance C2
Connect busbar.The external electrical connection busbar of phase module includes：DC+ busbars 10 (i.e. positive busbar), (the i.e. negative mother of DC- busbars 16
Row), PH busbars 13 (input or export busbar) and NP busbars 14 (i.e. neutral point busbar).
Wherein, above-mentioned connection busbar is full symmetric to shorten the premise of connection busbar length as far as possible in structure
Under, and can ensure well left half-bridge, right half-bridge stray inductance it is symmetrical, effectively realize the matching of parameter between IGCT.
It is simultaneously influence of the reduction connection busbar to the pressure assembling force of (PCC) power as far as possible, all electrical connection busbars inside phase module
Using the busbar that is flexible coupling, the busbar that is flexible coupling is formed by stacking using the very thin copper belt of Multilayered copper plate or multi-layered thickness.And phase
The external electrical connection busbar of module is realized using hard copper bus-bar, and these hard copper bus-bars are carried out tightly by insulating part
Gu.In addition, for four IGCT T1, T2, T3, T4 gate-drive plate, to ensure personal safety, using the exhausted of special substance
Listrium 8 is isolated and fixed.
Fig. 4 is the front view of three level IGCT phase modules provided in an embodiment of the present invention.As shown in figure 4, phase module passes through
Press-loading apparatus 2 is by four inverse conductivity type IGCT 7, two neutral-point-clamped diode 5, two absorption diode 3, several radiators
102 are overlapped mutually press fitting into a whole string (PCC) power successively, and two Absorption Capacitances 4 are arranged on the rear portion of phase module, symmetrical
In the left and right sides of phase module, and the (PCC) power in String structure is close adjacent successively so that overall arrangement is compact, reduces
The width and volume of phase module.And the uniformity of whole string (PCC) power pressure assembling force transmission has been effectively ensured in the press-loading apparatus 2, and
And phase module internal electric connected symmetrical dendrimer, stray inductance is small, can give full play to the ability of inverse conductivity type IGCT devices in itself.The press fitting
The concrete structure of device is as shown in Figure 5.
Fig. 5 is the structural representation of the press-loading apparatus of three level IGCT phase modules provided in an embodiment of the present invention.It refer to
Fig. 5, press-loading apparatus include left pressing plate 202, right pressing plate 207, support column 104 and 105.Preferably, press-loading apparatus can also include
Guide pillar 201, elastic component (such as disk spring 203), fastener (such as press mounting bolt 209, some press-fited nuts 208), Zuo Chuan
Pass cushion block 204, right transmission cushion block 206.Above-mentioned press-loading apparatus is by IGCT 7, clamp diode 5, absorption diode 3 and radiator
The whole String structure formed is fitted in the framework built with left pressing plate 201, support column 104 and 105, right pressing plate 205, string-like
Structure is symmetrical, and two Absorption Capacitances 4 are located at the rear portion of String structure, is symmetrically distributed in the left and right sides of String structure.
More specifically, left pressing plate 202 and right pressing plate 207 are arranged on String structure both ends, left pressing plate 202 and right pressing plate 207
Between be fixedly connected using support column 104,105, to accommodate and fixed String structure.Left pressing plate 202 and right pressing plate 207 are preferably
Aluminum alloy materials are made, and so can not only mitigate weight, but also it can be kept to have enough strength and stiffness, and aluminium closes
Deflection caused by golden material is sufficiently small, can bear the pressure assembling force of (PCC) power.
Guide pillar 201 is fixedly connected through left pressing plate 202 and with press mounting bolt 209, and guide pillar 201 can be relative to left pressing plate
202 move to influence the deformation quantity of disk spring 203.Guide pillar 201 has a shrinkage pool close to one end of left pressing plate 202, including shrinkage pool
There is helicitic texture on wall.
The opening that press mounting bolt 209 is penetrated on left pressing plate 202 is engaged to the helicitic texture in the shrinkage pool of guide pillar 201.Press fitting
Bolt 209 can be arranged in the center of left pressing plate 202.Press mounting bolt 209 needs that turning for the pressure assembling force of (PCC) power can be born
Move, so needing to carry out strength check as the case may be, to select suitable bolt specification.
Support column 104,105 and left pressing plate 202, right pressing plate 207 are rigidly secured together by press-fited nut 208, therefore
Left pressing plate 202 and right pressing plate 207 can be firmly fixed by press-fited nut 208 and support column 104,105.
Elastic component is chosen as disk spring 203, and it is set around guide pillar 201, and disk spring 203 is passed using self-deformation amount
Pressure assembling force is passed to (PCC) power, while it has certain retractility to eliminate influence of the extraneous vibration to pressure assembling force, to enter one
Step ensures that pressure assembling force continues unvaryingly to be maintained in required particular range.
Left transmission cushion block 204, right transmission cushion block 206 are in substantially coniform, in guide pillar 201 and the power to be pressed
Uniformly transferring for pressure assembling force is carried out between component, it can will be pressed dynamic balance and uniformly pass to String structure.By big
Experimental verification is measured, when the left cone angle for transmitting cushion block 204, the right conus portion for transmitting cushion block 206 is into 90 degree, left transmission cushion block 204,
The counterbalance effect of right transmission cushion block 206 is optimal, and the uniformity of whole (PCC) power pressure assembling force transmission can be effectively ensured.
Support column 104,105 passes through left pressing plate 202 and right pressing plate 207.Left pressing plate 202 and right pressing plate 207 pass through support column
104th, 105 fastened and positioned, even if fierce vibration is not easy to have an impact pressure assembling force.Preferably, support column 104,
The runner for fluid circulation is provided with 105, when coolant is passed through inside runner, can effectively be taken away by (PCC) power
The heat that (device i.e. in the tri-level circuit of phase module) sheds, so as to beneficial to more preferable, the more stable work of (PCC) power.
Fig. 6 is the layout of the radiating subassembly of three level IGCT phase modules provided in an embodiment of the present invention.Fig. 7 is the present invention
The structural representation of the support column for the three level IGCT phase modules that embodiment provides.Fig. 6 and Fig. 7 are refer to, radiating subassembly includes
Radiator 102, the water inlet pipe 100 being fixed on a support column 104, the outlet pipe being fixed on another support column 105
101st, the flexible pipe 103 being connected with two support columns.
Specifically, a (PCC) power is fixed between adjacent heat radiation device 102.Radiator 102 is for work(in work of dissipating
The heat of rate component makes it stable operation.Radiator can use water-filled radiator, can also use air-cooled radiator.The present invention
Radiator 102 in embodiment is integrally cast pressure by aluminum alloy material inner disc stainless steel tube and formed, and the two sides of radiator 102 are uniform
There is stainless steel tube, two-side radiation can be carried out, the rear portion of radiator 102 is machined with line bank, can be directly electrically connected, such as
Electrical connection between (PCC) power.
Preferably, support column 104,105 is thick stainless steel tube, may be selected wherein one as water inlet support column, another is
Water outlet support column, if selection support column 104 is water inlet support column, support column 105 is water outlet support column, support column 104,105
Left and right ends be provided with screw thread 107 and be used to be fixedly connected, the screw thread of the wherein one end of support column 104 is used for and nut fastening connects
Connect, other end screw thread is used to be connected with water inlet pipe 100.The screw thread of the wherein one end of support column 105 is used to be fastenedly connected with nut, separately
Threaded one end is used to be connected with outlet pipe 101.Multiple water interfaces 109, each water interface are provided with every support column 104,105
109 are connected by a flexible pipe with a radiator, each radiator by two flexible pipes 103 respectively with support column 104,105
It is connected, the wherein flexible pipe being connected on each radiator corresponds to water supply hose, and another flexible pipe corresponds to delivery hose, branch
Dagger 104,105 one side will bear the pressure assembling force of (PCC) power, on the other hand also function as the effect of cooling line, support column
104th, the 105 logical coolants (for example, deionized water) in inside are by being distributed several water interfaces 109 (such as Fig. 7) thereon and soft
Pipe 103 flows through some radiators 102 and radiated for (PCC) power parallel, it is ensured that the production in the power (PCC) power course of work
Raw heat can effectively be taken away.Support column 104,105 has press fitting support and cooling tube effect concurrently, and support column 104,105 is with dissipating
Connected between hot device by the flexible pipe of above-mentioned design, can adapt to high voltage, the electrical design specification of high current, unique phase module
Radiating subassembly taken into account press-loading apparatus support and cooling heat sinking function, ensure that heat caused by (PCC) power can be transmitted effectively
Go out.
Also, the section of support column 104 and support column 105 will consider two factors when choosing：On the one hand to have enough
Intensity is to bear the pressure assembling force of (PCC) power, while the linearity of support column 104,105 will accurately ensure to transmit the equal of power very much
Even property；On the other hand the area of its inner hollow wants the sufficiently large coolant rate to meet required for phase module radiating.Support
The arrangement of post 104,105 will consider the spacing between radiator and power device, and guarantee has enough electric clearances, supported simultaneously
The flexible pipe 103 connected between post 104,105 and radiator will ensure to have enough length to meet water resistance and creep age distance requirement,
With adapt to high voltage, high current electrical design code requirement.Preferably, flexible pipe 103 is adopted made of plastic.
It is pressed process and radiation processes the following detailed description of phase module：During press fitting, first by (PCC) power and radiator phase
String structure mutually is superimposed as, and makes its parallel to each other in the case where ensuring spacing distance.String structure is placed to respectively again
Between left pressing plate 202 and right pressing plate 207, the accurate deformation quantity for controlling disk spring 203, bolt 209 is then screwed in into guide pillar 201
Shrinkage pool in, the deformation quantity of disk spring 209 is maintained by guide pillar, the pressure corresponding to deformation quantity is that will be delivered to work(
Pressure assembling force is transmitted cushion block by guide pillar 201, left and right and is delivered to power by the pressure assembling force on rate component, the disk spring 209 of deformation
On component, so as to complete press fitting process.During radiating, coolant (for example, deionized water) is entered by the water inlet of water inlet pipe 100
Inside support column 104, and several water interfaces 109 by being distributed on support column 104 enter wherein one of each radiator
Flexible pipe 103, disperse through flexible pipe 103 to each radiator, coolant converges to the another of radiator after heat exchange is completed in radiator
A piece flexible pipe 103, flowed out after another flexible pipe 103 and support column 105 from the delivery port of outlet pipe 101.
In summary, the present embodiment provide IGCT phase modules, by using a whole string press mounting structure by four IGCT,
Two clamp diodes, two absorption diodes are symmetrically press fit together, and two Absorption Capacitances are symmetricly set in inside phase module,
Compact overall structure, electrical connection is symmetrical, and stray inductance is small, can give full play to the ability of IGCT devices in itself, to greatest extent
The fan-out capability of phase module is improved, and the structure of press-loading apparatus of the embodiment of the present invention has been effectively ensured inside (PCC) power and pressed
The uniformity of power transmission is filled, ensure that the reliability of (PCC) power work, the structure of radiating subassembly has taken into account press-loading apparatus support
It with cooling heat sinking function, can not only ensure that heat caused by (PCC) power can be distributed effectively, and cause phase module knot
Structure is compacter.
In addition, also having press fitting support and cooling tube effect concurrently by support column, pass through water interface between support column and radiator
Connected with flexible pipe, can adapt to high voltage, the electrical design specification of high current, and taken into account press-loading apparatus support and cooled down and dissipated
Hot function, it ensure that heat caused by (PCC) power can be passed effectively.
In addition, the electrical connection inside phase module, all to be flexible coupling busbar to realize, the busbar that is flexible coupling uses multiple layer of copper
Plate or the very thin copper belt of multi-layered thickness are formed by stacking, and the active force of (PCC) power is influenceed so as to reduce connection busbar.
In addition, the embodiment of the present invention also uses inverse conductivity type IGCT, and also solve inverse conductivity type IGCT device pressures well
It is the problems such as dress, cooling, high-voltage isolating, compact-sized, easy to maintenance, fully excavate inverse conductivity type IGCT devices superior in itself
Performance.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any to be familiar with this professional technology people
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, as long as being the technical spirit pair according to the present invention without departing from technical solution of the present invention content
Any simple modification, equivalent change and modification that above example is made, in the range of still falling within technical solution of the present invention.
Claims (9)
1. a kind of level IGCT phase modules of compact three, including：
Multiple (PCC) powers, including four IGCT, two clamp diodes, two absorption diodes and two Absorption Capacitances, institute
It is inverse conductivity type IGCT to state four IGCT；
Radiating subassembly, including the radiator between the multiple (PCC) power, the radiator are used for the power packages
Heat distributes caused by part；
Press-loading apparatus, including left pressing plate, support column and right pressing plate, the press-loading apparatus are used for four IGCT, and described two
The whole String structure that individual clamp diode, described two absorption diodes and the radiator are formed is fitted in the left pressure
In the framework that plate, the support column and the right pressing plate are built, the String structure is symmetrical, and two Absorption Capacitances are located at institute
The rear portion of String structure is stated, is symmetrically distributed in the left and right sides of the String structure, all inside the phase module electrically connect
The mode of connecing is attached by connecting busbar and the radiator, is divided into left half by boundary of neutral point inside the phase module
Bridge and right half-bridge, the connection busbar of the left half-bridge and the connection busbar of the right half-bridge are symmetrical, the left half-bridge and the right side
Half-bridge respectively includes two IGCT, a clamp diode and an absorption diode.
2. the level IGCT phase modules of compact three according to claim 1, it is characterised in that the institute inside the phase module
There is electrical connection busbar to be formed by stacking using the busbar that is flexible coupling, the busbar that is flexible coupling using Multilayered copper plate or copper belt.
3. the level IGCT phase modules of compact three according to claim 1, it is characterised in that the external electricity of the phase module
Gas connection busbar includes positive busbar, negative busbar, output busbar and neutral point busbar, the external electrical connection busbar of the phase module
Use hard copper bus-bar.
4. the level IGCT phase modules of compact three according to claim 1, it is characterised in that the press-loading apparatus also includes
Guide pillar, elastic component, press mounting bolt, some press-fited nuts, left transmission cushion block, right transmission cushion block and support column；The guide pillar can
Relative to the left pressing plate movement to influence the deformation quantity of the elastic component, the guide pillar has close to one end of the left pressing plate
Shrinkage pool, the shrinkage pool have helicitic texture on inwall, and the opening that the press mounting bolt is penetrated on the left pressing plate is engaged to institute
The helicitic texture in the shrinkage pool of guide pillar is stated, the press-fited nut is solid securely by the support column and the left pressing plate, right pressing plate
It is scheduled on together, the elastic component is arranged at side of the left pressing plate away from guide pillar, transmits pressure assembling force using self-deformation amount and arrives
The (PCC) power, the left transmission cushion block and right transmission cushion block are used in the guide pillar and the (PCC) power to be pressed
Between carry out pressure assembling force and uniformly transfer.
5. the level IGCT phase modules of compact three according to claim 4, it is characterised in that the left pressing plate and right pressing plate
It is made up of aluminum alloy materials, the elastic component is disk spring.
6. the level IGCT phase modules of compact three according to claim 4, it is characterised in that the left transmission cushion block and institute
The cone angle of the conus portion of right transmission cushion block is stated into 90 degree.
7. the level IGCT phase modules of compact three according to claim 4, it is characterised in that the support column is two,
The radiating subassembly also include be fixed on a support column water inlet pipe, be fixed on another support column outlet pipe, with
The connected flexible pipe of two support columns, the left and right ends of the every support column are provided with screw thread, wherein the screw thread of one end be used for
Press-fited nut is fastenedly connected, and the screw thread of the other end is used to be connected with water inlet pipe or outlet pipe, is provided with every support column multiple
Water interface, each water interface are connected by a flexible pipe with a radiator, and each radiator is by two flexible pipes respectively with two
Root support column is connected.
8. the level IGCT phase modules of compact three according to claim 1, it is characterised in that fixed between adjacent heat radiation device
There is a (PCC) power.
9. the level IGCT phase modules of compact three according to claim 1, it is characterised in that the radiator uses water cooling
Radiator or air-cooled radiator.
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| CN201510292935.6A CN104883077B (en) | 2015-06-02 | 2015-06-02 | The level IGCT phase modules of compact three |
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| CN104883077B true CN104883077B (en) | 2018-03-09 |
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| CN106559000A (en) * | 2015-09-30 | 2017-04-05 | 特变电工新疆新能源股份有限公司 | A kind of high-power compression joint type IGBT converter valve power unit structures |
| CN105242149B (en) * | 2015-11-04 | 2018-05-29 | 南车株洲电力机车研究所有限公司 | IGCT phase module circuits with inductive drop state-detection |
| CN106558575B (en) * | 2016-11-18 | 2019-02-01 | 许继电气股份有限公司 | A kind of lightweight compact flexible DC transmission converter valve and its converter valve components |
| CN108075620B (en) * | 2018-01-02 | 2024-04-09 | 清华四川能源互联网研究院 | High-power unit structure formed by IGCT thyristors |
| CN113395877B (en) * | 2021-06-02 | 2022-04-19 | 江苏云意电气股份有限公司 | Multilayer structure heat dissipation plate of BSG motor inverter and processing method |
| CN113991976A (en) * | 2021-10-29 | 2022-01-28 | 深圳市禾望电气股份有限公司 | Three-level power module |
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| EP1178593A1 (en) * | 2000-08-02 | 2002-02-06 | ABB Industrie AG | Semiconductor press stack |
| CN101211905B (en) * | 2006-12-30 | 2010-04-14 | 许继集团有限公司 | Press-loading valve stack for large power all-controlled semiconductor device |
| CN103367276B (en) * | 2013-06-28 | 2016-06-08 | 南车株洲电力机车研究所有限公司 | For press-fiting the device and method of plate type semiconductor element on press-loading device |
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