CN104867919B - Improve the encapsulating structure and packaging technology of optocoupler reliability - Google Patents
Improve the encapsulating structure and packaging technology of optocoupler reliability Download PDFInfo
- Publication number
- CN104867919B CN104867919B CN201510276434.9A CN201510276434A CN104867919B CN 104867919 B CN104867919 B CN 104867919B CN 201510276434 A CN201510276434 A CN 201510276434A CN 104867919 B CN104867919 B CN 104867919B
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- output end
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- silicon glue
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of encapsulating structure and packaging technology for improving optocoupler reliability, the packaging technology is specifically included：It is coupled and aligned and shelves, weld, encapsulates input and output end, the step of high pressure barrier layer and molding is set, its mesohigh barrier layer is arranged between input transparent silicon glue-line and output end transparent silicon glue-line, and molding compound is filled between input transparent silicon glue-line, output end transparent silicon glue-line, high pressure barrier layer outer wall and housing.The present invention can not only improve soldering temperature, optocoupler is applied SMT paster soldering process in welding process；But also can be under the conditions of Silica Surface processing complicated technology is not needed, eliminate the stress between chip welding gold thread and silica gel, molding compound and the high-voltage breakdown path inside optocoupler, on the basis of reduction production difficulty and production cost, the reliability of product has been effectively ensured.
Description
Technical field
The present invention relates to technical field of electronic components, particularly a kind of encapsulation work for being used to improve optocoupler high-voltage performance
Skill.
Background technology
Optocoupler be photo-coupler, the abbreviation of photoisolator, be using light as media transmission electric signal, to input electrical signal with
Output electric signal has a good buffer action, strong antijamming capability, and working stability is contactless, and service life is long, efficiency of transmission
Height, therefore be used widely in circuit.
The encapsulating structure of common optical coupler as shown in figure 1, including input chip 3 and output end chip 5, input chip and
Output end chip is separately positioned on input end frame 1 and output end frame 4, is all welded on input chip and output end chip
There is gold thread；In common optical coupler encapsulation process, it is necessary to by input chip and output end chip package in one piece of molding compound, and
And need to be provided separately between the two.To prevent from occurring high-voltage breakdown between input A and output end B, it is necessary to will encapsulation inside
Metal conduction portions transparent silica gel envelope 8 close, molding compound is then filled between housing and transparent silica gel again.Due to silica gel
With molding compound adhesion, in order to improve the high-voltage breakdown distance between the internal A-B of encapsulation, silica gel volume must be sufficiently large, so as to the greatest extent
The metal conduction portions that may be covered inside encapsulation.
But it is due to that colloidal silica product is too big, not so soldering temperature can cause no more than 260 DEG C/10 seconds during products application
Product encapsulation explosion.But product SMT pasters when applying temperature be up to 270 DEG C -280 DEG C/10 seconds, so the light of this class formation
Coupling can not use SMT mount technologies, and need independent manual welding；But the welding temperature during manual welding is not easy to control
Damage phenomenon often occurs in optocoupler after the completion of system, therefore welding.
In order to improve the high-voltage performance and soldering temperature of optocoupler, by the silica gel volume-diminished in optocoupler, as shown in Figure 2；But
It is after silica gel volume-diminished, high pressure distance to be caused after certainty not enough, easily occurs high-voltage breakdown phenomenon.In order to solve internal high pressure
Not enough, Silica Surface handling process is employed again makes silica gel cling molding compound in molding to striking distance, to eliminate inside optocoupler
High-voltage breakdown path.But using this structure, there is also drawback：Silica gel is heated in molding（170-180℃）Expansion, mould
Cooling meat after pressure, silica gel produces stress between molding compound and chip welding gold thread makes welding gold thread easily be pulled off, significantly
Reduce the integrity problem of product.
To sum up, using the optocoupler encapsulating structure and packaging technology after improvement, although improve soldering temperature, optocoupler can be made
SMT paster soldering process is applied in welding process；But there is Silica Surface complex treatment process, manufacturing cost and greatly improve
Defect, and stress of the silica gel between molding compound and chip, gold thread can reduce gold thread welding reliability.
The content of the invention
The technical problem to be solved in the invention is to provide one kind and can either improve optocoupler soldering temperature can improve light again
The packaging technology of coupling unfailing performance.
In order to solve the above technical problems, the technical solution used in the present invention is as follows.
The encapsulating structure of optocoupler reliability is improved, including contraposition is placed in input end frame and output end frame in housing side by side
Be bonded with input chip and output end chip respectively on frame, the input end frame and output end frame, input chip and
Welding gold thread is welded with output end chip；Spherical input is surrounded by outside input chip and input chip the welding gold thread
Hold and be surrounded by spherical output end transparent silicon glue-line, input outside transparent silicon glue-line, output end chip and output end chip welding gold thread
Thermoplastics type's transparent plastic high pressure barrier layer, the housing and input are provided between transparent silicon glue-line and output end transparent silicon glue-line
Hold and molding compound is filled between transparent silicon glue-line, output end transparent silicon glue-line and high pressure barrier layer.
The packaging technology of optocoupler reliability is improved, is comprised the following steps：
The input chip and output end chip of optocoupler are bonded in input end frame by first step respectively using electrocondution slurry
On output end frame, and input end frame and output end frame or so contraposition arranged side by side is set to be placed in housing；
Second step is respectively welded at gold thread is welded on input chip and output end chip；
3rd step encapsulates input chip and input chip welding gold thread using transparent silica gel that to form input transparent
Layer of silica gel, output end chip and output end chip welding gold thread are encapsulated to form output end transparent silicon glue-line using transparent silica gel；
4th step injects thermoplastics type's transparent plastic between input transparent silicon glue-line and output end transparent silicon glue-line and formed
High pressure barrier layer；
5th step, molding compound is injected into housing, and molding completes encapsulation.
The packaging technology of above-mentioned raising optocoupler reliability, the melting temperature of thermoplastics type's transparent plastic is less than described in the 4th step
Thermoplastic transparent plastic and molding compound adhesion, form high pressure barrier layer after molding process temperature, moulded package.
As a result of above technical scheme, the invention technological progress is as follows.
The present invention can not only improve soldering temperature, optocoupler is applied SMT paster soldering process in welding process；
But also can under the conditions of Silica Surface processing complicated technology is not needed, eliminate chip welding gold thread and silica gel, molding compound it
Between stress and the high-voltage breakdown path inside optocoupler, reduction production difficulty and production cost on the basis of, effectively protect
The reliability of product is demonstrate,proved.
Brief description of the drawings
Fig. 1 is the encapsulating structure schematic diagram of this common optical coupler；
Fig. 2 is the encapsulating structure schematic diagram after common optical coupler is improved；
Fig. 3 is encapsulating structure schematic diagram of the invention.
Wherein：1. end frame is inputted, 2. input chips welding gold thread, 3. input chips, 4. output end frames, 5. is defeated
Go out and hold chip, 6. output ends welding gold thread, 7. molding compounds, 8. transparent silica gels, 9. input transparent silicon glue-lines, 10. output ends are saturating
Bright layer of silica gel, 11. high pressure barrier layers.
Embodiment
In order that technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Drawings and Examples are closed, the present invention will be described in detail.It should be noted that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
The packaging technology of optocoupler reliability is improved, following steps are specifically included：
First step is coupled and aligned and shelved
The input chip 3 and output end chip 5 of optocoupler are bonded in and defeated by input end frame 1 using electrocondution slurry respectively
Go out on end frame 4, and make input end frame and output end frame or so align side by side to be placed in housing.
Second step is welded
Welding gold thread is respectively welded on input chip and output end chip.
3rd step encapsulates input and output end
Input chip 3 and input chip welding gold thread 2 are encapsulated to form input transparent silica gel using transparent silica gel
Layer 9, output end chip 5 and output end chip welding gold thread 6 are encapsulated to form output end transparent silicon glue-line 10 using transparent silica gel.
Due to silica gel and molding compound adhesion, therefore silica gel and molding compound will not produce stress to welding gold thread, would not also influence weldering
Connect the soldering reliability of gold thread.
4th step sets high pressure barrier layer
Thermoplastics type's transparent plastic formation high pressure is injected between input transparent silicon glue-line 9 and output end transparent silicon glue-line 10
Barrier layer 11.In the present invention, the melting temperature of thermoplastics type's transparent plastic is less than molding process temperature, to ensure the mould in the 6th step
Press in process thermoplastic and molding compound can adhesion, and thermoplastic reliably clings molding compound after molding cooling, from
And high pressure barrier layer is formed between input and output end, the high-voltage breakdown path inside optocoupler is eliminated, product is improved high
Press reliability.
5th step, molding
Molding compound 7 is injected into housing, molding completes encapsulation.In the present invention, molding compound uses white epoxy resin, with
Improve light transmittance.After moulded package, input transparent silicon glue-line, output end transparent silicon glue-line and molding compound are without adhesion, and thermoplastic is saturating
Bright plastics and molding compound adhesion, because high pressure barrier layer is located at outside gold thread, form high pressure barrier layer, it is to avoid after adhesion should
Power breaks gold thread.
The optocoupler made using the packaging technology of the present invention, its structure is as shown in figure 3, the encapsulating structure of optocoupler is specially：
Contraposition lays input end frame 1 and exports end frame 4 side by side in housing, is glued respectively on input end frame 1 and output end frame 4
It is connected on input chip 3 and output end chip 5, input chip 3 and output end chip 5 and is welded with welding gold thread；Input
Spherical input transparent silicon glue-line 9, output end chip 5 and output end core are surrounded by outside end chip 3 and input chip welding gold thread 2
Spherical output end transparent silicon glue-line 10, input transparent silicon glue-line 9 and output end transparent silicon glue-line 10 are surrounded by outside piece welding gold thread 6
Between be provided with thermoplastics type's transparent plastic high pressure barrier layer 11；Input transparent silicon glue-line 9, output end transparent silicon glue-line 10, height
Molding compound 7 is filled between the outer wall and housing of pressure drag tomography 11.
Transparent material of the present invention due to make use of two kinds of different qualities, light is eliminated with thermoplastic and molding compound bonding
Coupling internal high pressure breakdown path, improves the high voltage reliability of product；With transparent silica gel not with molding compound bond, eliminate silica gel and
Molding compound improves the soldering reliability of product to the stress of welding gold thread.Because thermoplastic melts deformation in molding,
Control is deformed when its volume smaller must just can guarantee that molding, therefore the present invention is used before high pressure barrier layer is set in input
With the encapsulating silica gel of output end so that the fixing fabric structure of thermoplastic is in less scope.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, diverter branch, pressure limiting branch
Road and discharge paths can also be the circuit structure that other components are constituted.Therefore it is all within the principle and spirit of the present invention
Any modifications, equivalent substitutions and improvements made etc., are included within protection scope of the present invention.
Claims (3)
1. the encapsulating structure of optocoupler reliability is improved, including contraposition arranged side by side is placed in housing and inputs end frame（1）And output end
Framework（4）, the input end frame（1）With output end frame（4）It is upper to be bonded with input chip respectively（3）With output end chip
（5）, welding gold thread is welded with input chip and output end chip；It is characterized in that：The input chip（3）With it is defeated
Enter to hold chip to weld gold thread（2）Spherical input transparent silicon glue-line is surrounded by outside（9）, output end chip（5）With the weldering of output end chip
Connect gold thread（6）Spherical output end transparent silicon glue-line is surrounded by outside（10）, input transparent silicon glue-line（9）With output end transparent silicon glue-line
（10）Between be provided with thermoplastics type's transparent plastic high pressure barrier layer（11）, the housing and input transparent silicon glue-line, output end
Molding compound is filled between transparent silicon glue-line and high pressure barrier layer（7）；Wherein, input transparent silicon glue-line, output end are transparent
Layer of silica gel is with molding compound without adhesion, thermoplastic transparent plastic high pressure barrier layer（11）With molding compound adhesion.
2. improve the packaging technology of optocoupler reliability, it is characterised in that comprise the following steps：
The input chip and output end chip of optocoupler are bonded in input end frame and defeated by first step respectively using electrocondution slurry
Go out on end frame, and make input end frame and output end frame or so align side by side to be placed in housing；
Second step is respectively welded at gold thread is welded on input chip and output end chip；
Input chip and input chip welding gold thread are encapsulated to form input transparent silica gel by the 3rd step using transparent silica gel
Layer, output end chip and output end chip welding gold thread are encapsulated to form output end transparent silicon glue-line using transparent silica gel；
4th step injects thermoplastics type's transparent plastic formation high pressure between input transparent silicon glue-line and output end transparent silicon glue-line
Barrier layer；
5th step, molding compound is injected into housing, and molding completes encapsulation.
3. the packaging technology according to claim 2 for improving optocoupler reliability, it is characterised in that：Thermoplastic described in 4th step
The melting temperature of type transparent plastic is less than thermoplastic transparent plastic and molding compound adhesion after molding process temperature, moulded package, is formed
High pressure barrier layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510276434.9A CN104867919B (en) | 2015-05-27 | 2015-05-27 | Improve the encapsulating structure and packaging technology of optocoupler reliability |
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| CN201510276434.9A CN104867919B (en) | 2015-05-27 | 2015-05-27 | Improve the encapsulating structure and packaging technology of optocoupler reliability |
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| CN104867919A CN104867919A (en) | 2015-08-26 |
| CN104867919B true CN104867919B (en) | 2017-07-28 |
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| CN109727935A (en) * | 2016-04-08 | 2019-05-07 | Oppo广东移动通信有限公司 | A kind of chip-packaging structure, terminal device and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5340993A (en) * | 1993-04-30 | 1994-08-23 | Motorola, Inc. | Optocoupler package wth integral voltage isolation barrier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0653540A (en) * | 1992-07-28 | 1994-02-25 | Matsushita Electric Works Ltd | Optical coupling element |
| JP4761766B2 (en) * | 2004-12-21 | 2011-08-31 | シャープ株式会社 | Optical coupling element and electronic device using the same |
| US20130313447A1 (en) * | 2010-03-23 | 2013-11-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Opto-coupler |
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2015
- 2015-05-27 CN CN201510276434.9A patent/CN104867919B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5340993A (en) * | 1993-04-30 | 1994-08-23 | Motorola, Inc. | Optocoupler package wth integral voltage isolation barrier |
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Effective date of registration: 20201127 Address after: 315000 factory buildings 23 and 24, No. 68, Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province Patentee after: Ningbo qunzi Microelectronics Co.,Ltd. Address before: 214145, Wuxi strong dream Technology Co., Ltd., 208-9 Tin Road, Hongshan Town, Hongshan District, Wuxi, Jiangsu Patentee before: Shen Zhenqiang |
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Address after: 315336 plant 23 and 24, No. 68, Yuhai East Road, Hangzhou Bay New Area, Ningbo City, Zhejiang Province Patentee after: Ningbo Qunxin Microelectronics Co.,Ltd. Address before: 315000 workshops 23 and 24, 68 Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province Patentee before: Ningbo qunzi Microelectronics Co.,Ltd. |
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