CN204632757U - Improve the encapsulating structure of optocoupler reliability - Google Patents
Improve the encapsulating structure of optocoupler reliability Download PDFInfo
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- CN204632757U CN204632757U CN201520349117.0U CN201520349117U CN204632757U CN 204632757 U CN204632757 U CN 204632757U CN 201520349117 U CN201520349117 U CN 201520349117U CN 204632757 U CN204632757 U CN 204632757U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of encapsulating structure improving optocoupler reliability, comprise contraposition arranged side by side and be placed in input framework and output framework in housing, described input framework and output framework are bonded with input chip and output chip respectively, input chip and output chip are all welded with welding gold thread; Spherical input transparent silicon glue-line is surrounded by outside described input chip and input chips welding gold thread, spherical output transparent silicon glue-line is surrounded by outside output chip and output chips welding gold thread, thermoplastics type's transparent plastic high pressure barrier layer is provided with, described housing and be filled with molding compound between input transparent silicon glue-line, output transparent silicon glue-line and high pressure barrier layer between input transparent silicon glue-line and output transparent silicon glue-line.The utility model can not only improve soldering temperature, can also eliminate the high-voltage breakdown path of optocoupler inside, on the basis reducing production difficulty and production cost, effectively ensure that the reliability of product.
Description
Technical field
The utility model relates to technical field of electronic components, particularly a kind of encapsulating structure for improving optocoupler high-voltage performance.
Background technology
Optocoupler is the abbreviation of optical coupler, photoisolator, is take light as the media transmission signal of telecommunication, has good buffer action to input electrical signal and the output signal of telecommunication, antijamming capability is strong, and working stability is contactless, long service life, efficiency of transmission is high, is therefore used widely in circuit.
The encapsulating structure of common optical coupler as shown in Figure 1, comprises input chip 3 and output chip 5, and input chip and output chip are separately positioned on input framework 1 and output framework 4, and input chip and output chip are all welded with gold thread; In common optical coupler encapsulation process, need by input chip and output chip package in one piece of molding compound, and need between the two to be provided separately.For preventing, between input A and output B, high-voltage breakdown occurs, needing the metal conduction portions transparent silicon rubber seal 8 by encapsulation is inner to close, and then fill molding compound between housing and transparent silica gel.Due to silica gel and molding compound adhesion, in order to improve the high-voltage breakdown distance between the inner A-B of encapsulation, silica gel volume is sufficiently large, to cover the inner metal conduction portions of encapsulation as far as possible.
But because silica gel volume is too large, during products application soldering temperature can not more than 260 DEG C/10 seconds, product not so can be caused to encapsulate explosion.But during the application of product SMT paster, temperature will reach 270 DEG C-280 DEG C/10 seconds, so the optocoupler of this class formation can not adopt SMT mount technology, and need independent manual welding; But the welding temperature in manual welding process is also wayward, the optocoupler after therefore having welded often there will be damage phenomenon.
In order to improve high-voltage performance and the soldering temperature of optocoupler, by the silica gel volume-diminished in optocoupler, as shown in Figure 2; But after silica gel volume-diminished, cause high pressure distance after inevitable not, easily high-voltage breakdown phenomenon occurs.Inadequate in order to solve internal high pressure striking distance, have employed again Silica Surface treatment process and make silica gel cling molding compound when mold pressing, to eliminate the high-voltage breakdown path of optocoupler inside.But adopt this structure also to there is drawback: silica gel be heated when mold pressing (170-180 DEG C) expand, cooling meat after mold pressing, silica gel produces stress between molding compound and chips welding gold thread makes welding gold thread easily be pulled off, and greatly reduces the integrity problem of product.
To sum up, adopt the optocoupler encapsulating structure after improving and packaging technology, although improve soldering temperature, can make optocoupler in welding process, apply SMT paster soldering process; But there is Silica Surface complex treatment process, defect that manufacturing cost improves greatly, and the stress of silica gel between molding compound and chip, gold thread can reduce the reliability of gold thread welding.
Summary of the invention
The utility model technical issues that need to address are to provide a kind of encapsulating structure that can either improve optocoupler soldering temperature, can improve again optocoupler unfailing performance.
For solving the problems of the technologies described above, technical solution adopted in the utility model is as follows.
Improve the encapsulating structure of optocoupler reliability, comprise contraposition arranged side by side and be placed in input framework and output framework in housing, described input framework and output framework are bonded with input chip and output chip respectively, input chip and output chip are all welded with welding gold thread; Spherical input transparent silicon glue-line is surrounded by outside described input chip and input chips welding gold thread, spherical output transparent silicon glue-line is surrounded by outside output chip and output chips welding gold thread, thermoplastics type's transparent plastic high pressure barrier layer is provided with, described housing and be filled with molding compound between input transparent silicon glue-line, output transparent silicon glue-line and high pressure barrier layer between input transparent silicon glue-line and output transparent silicon glue-line.
Owing to have employed above technical scheme, acquired by the utility model, technological progress is as follows.
The utility model can not only improve soldering temperature, enables optocoupler in welding process, apply SMT paster soldering process; But also can not need under Silica Surface process complicated technology condition, eliminate the high-voltage breakdown path of stress between chips welding gold thread and silica gel, molding compound and optocoupler inside, on the basis reducing production difficulty and production cost, effectively ensure that the reliability of product.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of this common optical coupler;
Fig. 2 is the encapsulating structure schematic diagram after common optical coupler improves;
Fig. 3 is encapsulating structure schematic diagram of the present utility model.
Wherein: 1. input framework, 2. input chips welding gold thread, 3. input chip, 4. output framework, 5. output chip, 6. output welding gold thread, 7. molding compound, 8. transparent silica gel, 9. input transparent silicon glue-line, 10. output transparent silicon glue-line, 11. high pressure barrier layer.
Embodiment
In order to make technical problem to be solved in the utility model, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the utility model is described in detail.It should be noted that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Improve the encapsulating structure of optocoupler reliability, comprise contraposition arranged side by side and be placed in input framework 1 and output framework 4 in housing, input framework 1 and output framework 4 are bonded with input chip 3 and output chip 5 respectively, input chip 3 and output chip 5 are all welded with welding gold thread.
Spherical input transparent silicon glue-line 9 is surrounded by outside input chip 3 and input chips welding gold thread 2, be surrounded by spherical output transparent silicon glue-line 10 outside output chip 5 and output chips welding gold thread 6, between input transparent silicon glue-line 9 and output transparent silicon glue-line 10, be provided with thermoplastics type's transparent plastic high pressure barrier layer 11; Molding compound 7 is filled with between the outer wall of input transparent silicon glue-line 9, output transparent silicon glue-line 10, high pressure barrier layer 11 and housing.
The packaging technology of above-mentioned encapsulating structure optocoupler comprises the following steps:
The first step. be coupled and aligned and shelve
Adopt electrocondution slurry the input chip 3 of optocoupler and output chip 5 to be bonded in respectively on input framework 1 and output framework 4, and about making input framework and output framework, contraposition arranged side by side is placed in housing.
Second step. welding
Welding gold thread is welded on respectively on input chip and output chip.
3rd step. encapsulating input and output
Input chip 3 and input chips welding gold thread 2 are adopted transparent silica gel to encapsulate and form input transparent silicon glue-line 9, output chip 5 and output chips welding gold thread 6 are adopted transparent silica gel to encapsulate and form output transparent silicon glue-line 10.Due to silica gel and molding compound adhesion, therefore silica gel and molding compound can not produce stress to welding gold thread, also would not affect the soldering reliability of welding gold thread.
4th step. high pressure barrier layer is set
Between input transparent silicon glue-line 9 and output transparent silicon glue-line 10, inject thermoplastics type's transparent plastic form high pressure barrier layer 11.In the utility model, the melting temperature of thermoplastics type's transparent plastic is lower than molding process temperature, to ensure that in the mold pressing procedure of the 6th step thermoplastic and molding compound can adhesions, and thermoplastic reliably clings molding compound after mold pressing cooling, thus between input and output, form high pressure barrier layer, eliminate the high-voltage breakdown path of optocoupler inside, improve product high voltage reliability.
5th step, mold pressing
In housing, inject molding compound 7, namely mold pressing completes encapsulation.In the utility model, molding compound adopts white epoxy resin, to improve light transmittance.After moulded package, input transparent silicon glue-line, output transparent silicon glue-line and molding compound are without adhesion, and thermoplastic transparent plastic and molding compound adhesion, because high pressure barrier layer is positioned at outside gold thread, form high pressure barrier layer, avoid the stress after adhesion and broken by gold thread.
Adopt the optocoupler that encapsulating structure of the present utility model makes, its structure as shown in Figure 3.Owing to make use of the transparent material of two kinds of different qualities, bond with thermoplastic and molding compound and eliminate optocoupler internal high pressure breakdown path, improve the high voltage reliability of product; Do not bond with molding compound by transparent silica gel, eliminate silica gel and the molding compound stress to welding gold thread, improve the soldering reliability of product.Because thermoplastic melts distortion when mold pressing, its volume must less guarantee mold pressing time controlling distortion, therefore the utility model adopts the encapsulating silica gel at input and output before arranging high pressure barrier layer, thus makes the fixing fabric structure of thermoplastic in less scope.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, diverter branch, pressure limiting branch road and discharge paths can also be the circuit structures that other components and parts are formed.Therefore all do within principle of the present utility model and spirit any amendment, equivalent to replace and improvement etc., be all just included within protection range of the present utility model.
Claims (1)
1. improve the encapsulating structure of optocoupler reliability, comprise contraposition arranged side by side and be placed in input framework (1) and output framework (4) in housing, described input framework (1) and output framework (4) are bonded with input chip (3) and output chip (5) respectively, input chip and output chip are all welded with welding gold thread; It is characterized in that: outside described input chip (3) and input chips welding gold thread (2), be surrounded by spherical input transparent silicon glue-line (9), spherical output transparent silicon glue-line (10) is surrounded by outside output chip (5) and output chips welding gold thread (6), thermoplastics type's transparent plastic high pressure barrier layer (11) is provided with, described housing and be filled with molding compound (7) between input transparent silicon glue-line, output transparent silicon glue-line and high pressure barrier layer between input transparent silicon glue-line (9) and output transparent silicon glue-line (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520349117.0U CN204632757U (en) | 2015-05-27 | 2015-05-27 | Improve the encapsulating structure of optocoupler reliability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520349117.0U CN204632757U (en) | 2015-05-27 | 2015-05-27 | Improve the encapsulating structure of optocoupler reliability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204632757U true CN204632757U (en) | 2015-09-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520349117.0U Active CN204632757U (en) | 2015-05-27 | 2015-05-27 | Improve the encapsulating structure of optocoupler reliability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204632757U (en) |
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2015
- 2015-05-27 CN CN201520349117.0U patent/CN204632757U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: WUXI GIAN MENDA TECHNOLOGY Co.,Ltd. Assignor: Shen Zhenqiang Contract record no.: 2015320010154 Denomination of utility model: Packaging structure and packaging technology improving optical coupler reliability Granted publication date: 20150909 License type: Common License Record date: 20151104 |
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| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201224 Address after: 315000 workshops 23 and 24, 68 Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province Patentee after: Ningbo qunzi Microelectronics Co.,Ltd. Address before: 214145 Wuxi Qiangmeng Technology Co.,Ltd., No.208-9 Xixie Road, Hongshan Town, Wuxi New District, Jiangsu Province Patentee before: Shen Zhenqiang |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 315336 plant 23 and 24, No. 68, Yuhai East Road, Hangzhou Bay New Area, Ningbo City, Zhejiang Province Patentee after: Ningbo Qunxin Microelectronics Co.,Ltd. Address before: 315000 workshops 23 and 24, 68 Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province Patentee before: Ningbo qunzi Microelectronics Co.,Ltd. |