CN104865178A - Method for rapid detection of SiO2 film thickness and film compact - Google Patents
Method for rapid detection of SiO2 film thickness and film compact Download PDFInfo
- Publication number
- CN104865178A CN104865178A CN201510188221.0A CN201510188221A CN104865178A CN 104865178 A CN104865178 A CN 104865178A CN 201510188221 A CN201510188221 A CN 201510188221A CN 104865178 A CN104865178 A CN 104865178A
- Authority
- CN
- China
- Prior art keywords
- acid solution
- temperature
- acidic solution
- sio
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a method for rapid detection of SiO2 film thickness and film compact, and relates to the technical field of glass detection. The detection method is as follows: 1) preparing an acidic solution containing HF, HNO3 and DI water in a ratio of 2.4%:1.6%:96%, and storing the acidic solution in a plastic cup; 2) cutting a sample to be tested into small pieces, and attaching two parallel tapes with spacing of 1mm to the surface to form a step, compacting the tapes along the same direction and keeping the step edges smooth; 3) heating a water bath, setting the temperature to 30 DEG C, and heating the plastic cup filled with acidic solution in the water bath; and confirming the temperature of the acidic solution reaching 30+/-2 DEG C; and 4) soaking the step into the acidic solution with specified temperature, and detecting the etching rate at the soak time of 50s, 70s, 90s and 110s. The method can directly use adverse glass in the production line in the production process for test again, does not need an oil pen line for production of sample steps, and greatly improves test efficiency and productivity.
Description
Technical field
The present invention relates in magnetron sputtering plating commercial production and detect thickness and rete compactness technical field fast, particularly relate to one and detect SiO fast
2the method of thickness and rete compactness.
Background technology
Along with digitized information industry is fast-developing, Smart Home application is more and more extensive, and in household electrical appliances display, Instrument use gets more and more, and general LCD liquid crystal display and touch-control series products all need to cover one deck SiO before being coated with ITO
2film, plays and stops that sodion is separated out, the effect of enhancing adhesion, all adopt oil pen to make step-on testing physical property thickness in commercial production.
Mostly be in current industry use oil pen rule make sample carry out plated film, wipe oil pen's marking after completing and make step, test step depth is physical property thickness, but this kind of mode need make sample, cannot test thicknesses of layers fast, and this mode can only test rete physical property thickness, cannot evaluate rete compactness.
Summary of the invention
One is the object of the present invention is to provide to detect SiO fast
2the method of thickness and rete compactness, to solve the problems of the technologies described above.Use HF acid to detect to etch rete, test membrane layer depth also evaluates rete compactness.
Technical matters to be solved by this invention realizes by the following technical solutions:
A method for quick detection SiO2 thickness and rete compactness, is characterized in that, method of testing step is as follows:
1) acid solution prepares
Analysis on Selecting is pure, and configuration proportion is HF:HNO
3: DI water=2.4%:1.6%:96%, deposits in plastic cup by the acid solution configured;
2) step makes
Print to be detected is cut into small pieces, and at its surperficial parallel stickup two adhesive tapes, be made into step, two adhesive tape spacing are 1mm, and adhesive tape is compacting in the same direction, keep step flush edge;
3) acid solution heating
Open water bath heats, and temperature is set as 30 DEG C, and the plastic cup filling acid solution is put into heating; Confirm that the temperature of acid solution reaches 30 ± 2 DEG C by thermometer, experiment can be started; When temperature confirms, eye sight line should perpendicular to graduation of thermometer line;
4) SiO
2rete compactness is evaluated
Glass SiO
2rete reaction rate in acid solution is considerably slower than the reaction rate of glass, and glass etching speed is
siO
2film etch-rate is
the acid solution that the step made is placed in assigned temperature soaked, during detection etch-rate, soak time is defined as 50s, 70s, 90s, 110s, and experimental period experimentally situation decision during deduction SiO2 thickness, initial time is decided to be 50s, in 90s
for qualified.
The invention has the beneficial effects as follows:
1. detect fast
Use the method, can directly use apparent bad glass in production run to test in online production, without the need to reuse oil pen rule make step complete sample, greatly improve testing efficiency, promote production capacity;
2. decreasing pollution
Conventional art all needs to use oil pen to rule and makes step detection thickness, this slide glass needs again to make and oil pen exists venting problem, can have an impact to atmosphere in vacuum chamber in vacuum coating, affect film adhesion and cause resistivity too high simultaneously, the invention solves this problem.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of print Continuous pressing device for stereo-pattern of the present invention.
Embodiment
The technological means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with specific embodiments and the drawings, set forth the present invention further, but following embodiment being only the preferred embodiments of the present invention, and not all.Based on the embodiment in embodiment, those skilled in the art under the prerequisite not making creative work obtain other embodiment, all belong to protection scope of the present invention.
One detects SiO fast
2the method of thickness and rete compactness, method of testing step is as follows:
1) acid solution prepares
Analysis on Selecting is pure, and configuration proportion is HF:HNO
3: DI water=2.4%:1.6%:96%, deposits in plastic cup by the acid solution configured;
2) step makes (as shown in Figure 1)
Print to be detected is cut into small pieces, and at its surperficial parallel stickup two adhesive tapes, be made into step, two adhesive tape spacing are 1mm, and adhesive tape is compacting in the same direction, keep step flush edge;
3) acid solution heating
Open water bath heats, and temperature is set as 30 DEG C, and the plastic cup filling acid solution is put into heating; Confirm that the temperature of acid solution reaches 30 ± 2 DEG C by thermometer, experiment can be started; When temperature confirms, eye sight line should perpendicular to graduation of thermometer line;
4) SiO
2rete compactness is evaluated
Glass SiO
2rete reaction rate in acid solution is considerably slower than the reaction rate of glass, and glass etching speed is
siO
2film etch-rate is
the acid solution that the step made is placed in assigned temperature soaked, during detection etch-rate, soak time is defined as 50s, 70s, 90s, 110s, and experimental period experimentally situation decision during deduction SiO2 thickness, initial time is decided to be 50s, in 90s
for qualified.
In Fig. 1:
1. adhesive tape---for cover layer, protective film acid and alkali liquid etches;
2. etched film region---unprotect directly contacts acid solution herein, removes after adhesive tape cleans and namely complete step making after acid solution contact;
3. glass substrate---exposed herein, during acid solution etching, rete is removed.
More than show and describe ultimate principle of the present invention, principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and instructions is only preference of the present invention; be not used for limiting the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (1)
1. one kind is detected SiO fast
2the method of thickness and rete compactness, is characterized in that, method of testing step is as follows:
1) acid solution prepares
Analysis on Selecting is pure, and configuration proportion is HF:HNO
3: DI water=2.4%:1.6%:96%, deposits in plastic cup by the acid solution configured;
2) step makes
Print to be detected is cut into small pieces, and at its surperficial parallel stickup two adhesive tapes, be made into step, two adhesive tape spacing are 1mm, and adhesive tape is compacting in the same direction, keep step flush edge;
3) acid solution heating
Open water bath heats, and temperature is set as 30 DEG C, and the plastic cup filling acid solution is put into heating; Confirm that the temperature of acid solution reaches 30 ± 2 DEG C by thermometer, experiment can be started; When temperature confirms, eye sight line should perpendicular to graduation of thermometer line;
4) SiO
2rete compactness is evaluated
Glass SiO
2rete reaction rate in acid solution is considerably slower than the reaction rate of glass, and glass etching speed is
siO
2film etch-rate is
the acid solution that the step made is placed in assigned temperature soaked, when detecting etch-rate, soak time is defined as 50s, 70s, 90s, 110s, when inferring SiO2 thickness experimental period experimentally situation determine, initial time is decided to be 50s, the degree of depth in 90s≤
for qualified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188221.0A CN104865178A (en) | 2015-04-20 | 2015-04-20 | Method for rapid detection of SiO2 film thickness and film compact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188221.0A CN104865178A (en) | 2015-04-20 | 2015-04-20 | Method for rapid detection of SiO2 film thickness and film compact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104865178A true CN104865178A (en) | 2015-08-26 |
Family
ID=53911161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510188221.0A Pending CN104865178A (en) | 2015-04-20 | 2015-04-20 | Method for rapid detection of SiO2 film thickness and film compact |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104865178A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109738469A (en) * | 2018-12-29 | 2019-05-10 | 赛纳生物科技(北京)有限公司 | A kind of compactness detection method of FOP surface micro-pit plated film |
| CN110085531A (en) * | 2019-04-23 | 2019-08-02 | 武汉新芯集成电路制造有限公司 | The detection method of wafer temperature distribution |
| CN112394026A (en) * | 2020-12-07 | 2021-02-23 | 国网福建省电力有限公司 | Rapid evaluation method for performance of weather-resistant steel rust layer for transmission tower in rural atmospheric environment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256331A (en) * | 1997-03-14 | 1998-09-25 | Super Silicon Kenkyusho:Kk | Manufacture of semiconductor wafer for evaluation |
| KR20000019635A (en) * | 1998-09-14 | 2000-04-15 | 윤종용 | Method for simplifying gate oxide process of semiconductor device having trench isolation |
| CN1601707A (en) * | 2004-09-30 | 2005-03-30 | 北京大学 | Processing method of SOC silicon substrate |
| US20050142804A1 (en) * | 2003-12-30 | 2005-06-30 | Dongbuanam Semiconductor Inc. | Method for fabricating shallow trench isolation structure of semiconductor device |
| KR20090063657A (en) * | 2007-12-14 | 2009-06-18 | 주식회사 동부하이텍 | Method for fabricating a sti |
| CN102346127A (en) * | 2011-09-08 | 2012-02-08 | 浙江向日葵光能科技股份有限公司 | Solution for measuring compactness of silicon nitride film of solar cell and application method thereof |
| CN104261410A (en) * | 2014-09-23 | 2015-01-07 | 扬州荣德新能源科技有限公司 | Method for cleaning silicon materials |
-
2015
- 2015-04-20 CN CN201510188221.0A patent/CN104865178A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256331A (en) * | 1997-03-14 | 1998-09-25 | Super Silicon Kenkyusho:Kk | Manufacture of semiconductor wafer for evaluation |
| KR20000019635A (en) * | 1998-09-14 | 2000-04-15 | 윤종용 | Method for simplifying gate oxide process of semiconductor device having trench isolation |
| US20050142804A1 (en) * | 2003-12-30 | 2005-06-30 | Dongbuanam Semiconductor Inc. | Method for fabricating shallow trench isolation structure of semiconductor device |
| CN1601707A (en) * | 2004-09-30 | 2005-03-30 | 北京大学 | Processing method of SOC silicon substrate |
| KR20090063657A (en) * | 2007-12-14 | 2009-06-18 | 주식회사 동부하이텍 | Method for fabricating a sti |
| CN102346127A (en) * | 2011-09-08 | 2012-02-08 | 浙江向日葵光能科技股份有限公司 | Solution for measuring compactness of silicon nitride film of solar cell and application method thereof |
| CN104261410A (en) * | 2014-09-23 | 2015-01-07 | 扬州荣德新能源科技有限公司 | Method for cleaning silicon materials |
Non-Patent Citations (3)
| Title |
|---|
| 张富 等: "SiO_2薄膜致密性的表征", 《微电子学》 * |
| 汤加苗 等: "溶胶_凝胶法制备高强度二氧化硅增透膜的研究", 《光学学报》 * |
| 郭文涛 等: "PECVD提高SiO2薄膜致密性的研究", 《人工晶体学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109738469A (en) * | 2018-12-29 | 2019-05-10 | 赛纳生物科技(北京)有限公司 | A kind of compactness detection method of FOP surface micro-pit plated film |
| CN110085531A (en) * | 2019-04-23 | 2019-08-02 | 武汉新芯集成电路制造有限公司 | The detection method of wafer temperature distribution |
| CN110085531B (en) * | 2019-04-23 | 2021-02-05 | 武汉新芯集成电路制造有限公司 | Wafer temperature distribution detection method |
| CN112394026A (en) * | 2020-12-07 | 2021-02-23 | 国网福建省电力有限公司 | Rapid evaluation method for performance of weather-resistant steel rust layer for transmission tower in rural atmospheric environment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104865178A (en) | Method for rapid detection of SiO2 film thickness and film compact | |
| CN103197797A (en) | Anti-acid film and preparing method and application thereof | |
| CN204128996U (en) | A kind of MEMS gas sensor | |
| CN103017713A (en) | Measuring method for damage layer thickness of optical material subsurface | |
| CN102530834B (en) | Manufacturing method of impedance type microfluidic chip | |
| CN103165225A (en) | Transparent conductive film | |
| CN104238782A (en) | Touch screen electrode preparation method | |
| CN104891425A (en) | Flow sensor chip based on graphene and preparation method thereof | |
| CN204008531U (en) | A kind of MEMS gas sensor with adiabatic groove | |
| Tran et al. | Copper thin film for RFID UHF antenna on flexible substrate | |
| CN104820535A (en) | Process for manufacturing single-layer multi-point capacitive touch screen with pure ITO membrane structure | |
| CN102667683B (en) | For plate and the manufacture method thereof of touch panel | |
| CN102543266B (en) | Transparent conducting film with copper conductor | |
| CN101661355A (en) | Touch panel and manufacturing method thereof | |
| JP6930698B2 (en) | Metal pattern film and its manufacturing method | |
| KR101165948B1 (en) | Panel For Detecting Touch And Method Thereof | |
| CN107425112A (en) | Film sonic sensor and preparation method thereof | |
| KR101417993B1 (en) | Method for manufacturing cover glass of touch screen panel and the cover glass of touch screen panel manufactured thereby | |
| CN102778486B (en) | Potential measurement method of cold-rolled enameling sheet steel sensitivity | |
| CN104951166B (en) | Transparent conductive film and the capacitive touch screen comprising it | |
| CN103197820B (en) | Whether OGS touch screen is detected by the method for acid corrosion in secondary hardening process | |
| CN106370536A (en) | Measuring method of Vickers hardness of TFT liquid crystal glass substrate | |
| CN104165902A (en) | MEMS gas sensor with heat insulation groove and processing method thereof | |
| CN108320668A (en) | Flexible display substrates and preparation method thereof | |
| CN106226226A (en) | A kind of atmosphere environment corrosion detection sensor and evaluation methodology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150826 |
|
| RJ01 | Rejection of invention patent application after publication |