CN108320668A - Flexible display substrates and preparation method thereof - Google Patents
Flexible display substrates and preparation method thereof Download PDFInfo
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- CN108320668A CN108320668A CN201810053538.7A CN201810053538A CN108320668A CN 108320668 A CN108320668 A CN 108320668A CN 201810053538 A CN201810053538 A CN 201810053538A CN 108320668 A CN108320668 A CN 108320668A
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- Prior art keywords
- etching
- layer
- flexible substrate
- display substrates
- flexible display
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
Abstract
The present invention relates to a kind of flexible display substrates and preparation method thereof.Flexible display substrates include flexible substrate, buffer layer and the etching terminal marker between flexible substrate and buffer layer；Etching terminal marker is indicating etching terminal when dry etching buffer layer.In above-mentioned flexible display substrates, since etching terminal marker is between flexible substrate and buffer layer, in etching process, when the interface of dry etching buffer layer to buffer layer and etching terminal marker, etching terminal can be crawled.Therefore, etching process can stop in time, avoid causing flexible substrate exposed, so as to avoid etching cavity from polluting, be conducive to apply.
Description
Technical field
The present invention relates to display technology fields, more particularly to a kind of flexible display substrates and preparation method thereof.
Background technology
With the development of display screen, flexible display technologies are increasingly becoming a kind of trend.To realize bent effect, array work
Skill usually requires to be etched to flexible substrate.However, when using dry etching, the interface etching of flexible substrate and topmost functional layer is not
It can be crawled, it will usually on direct etching to flexible substrate.Flexible substrate is exposed during leading to dry etching, be easy to cause quarter
Chamber contamination is lost, is unfavorable for applying.
Invention content
Based on this, it is necessary to which, for how to avoid the problem that etching cavity pollutes, etching cavity can be avoided by providing one kind
Flexible display substrates of pollution and preparation method thereof.
A kind of flexible display substrates, including flexible substrate, buffer layer and the quarter between flexible substrate and buffer layer
Lose End point indication layer；The etching terminal marker when buffer layer described in the dry etching indicating etching terminal.
It is etched since etching terminal marker is between flexible substrate and buffer layer in above-mentioned flexible display substrates
Cheng Zhong, when the interface of dry etching buffer layer to buffer layer and etching terminal marker, etching terminal can be crawled.Cause
This, etching process can stop in time, avoid causing flexible substrate exposed, so as to avoid etching cavity from polluting, be conducive to
Using.
The etching terminal marker is a-Si layers, silicon nitride layer or silicon oxynitride layer in one of the embodiments,.
The etching terminal marker is metal layer or metal oxide layer in one of the embodiments,.
The material of the metal layer is molybdenum or titanium in one of the embodiments,.
The metal oxide layer is ITO layer in one of the embodiments,.
The thickness of the etching terminal marker is 10nm~20nm in one of the embodiments,.
The buffer layer is silicon oxide layer in one of the embodiments,.
The flexible substrate includes in one of the embodiments,：
First organic flexible substrate；
Separate layer, the separate layer include the silicon oxide layer, silicon nitride layer and a-Si layer stacked gradually；
And the second organic flexible substrate；
Wherein, the first organic flexible substrate is located at the two of the separate layer with the second organic flexible substrate
Side.
The first organic flexible substrate and the second organic flexible substrate are PI in one of the embodiments,
Layer.
In addition, also providing a kind of preparation method of flexible display substrates, include the following steps：
Flexible substrate is provided；
Etching terminal marker is formed in the flexible substrate；
And form buffer layer on the etching terminal marker；
Wherein, the etching terminal marker when etching the buffer layer indicating etching terminal.
In the flexible display substrates being prepared using the preparation method of above-mentioned flexible display substrates, since etching terminal refers to
Show layer between flexible substrate and buffer layer, in etching process, when dry etching buffer layer to buffer layer and etching terminal refers to
When showing the interface of layer, etching terminal can be crawled.Therefore, etching process can stop in time, avoid causing flexible substrate naked
Dew, so as to avoid etching cavity from polluting, is conducive to apply.
Description of the drawings
Fig. 1 is the schematic diagram of the flexible display substrates of an embodiment.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of violating intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
Fig. 1 is referred to, the flexible display substrates 100 of an embodiment include flexible substrate 110, buffer layer 120, Yi Jiwei
Etching terminal marker 130 between flexible substrate 110 and buffer layer 120.
Wherein, etching terminal marker 130 is indicating etching terminal when dry etching buffer layer 120.
On the basis of aforementioned embodiments, etching terminal marker 130 is a-Si layers, silicon nitride layer or silicon oxynitride
Layer.When dry etching, the plasma that etching gas generates can be reacted with the etching terminal marker 130 of these types, and
Reaction product can accurately detect specific and effective wavelength by endpoint detector (EPD, End-point Detector),
Wavelength change can be formed, so as to effectively be captured etching terminal, and then stops etching.
Wherein, when etching terminal marker 130 is a-Si, the selection using a-si and buffer layer 120 is compared in flexible liner
The problem of retaining a-si on bottom 110, prevent etching cavity from polluting to reach.
On the basis of aforementioned embodiments, etching terminal marker 130 is metal layer or metal oxide layer.Dry method
When etching, plasma that etching gas generates can be with metal or reactive metal oxide, and reaction product can be by
EPD accurately detects specific and effective wavelength, can form wavelength change, so as to effectively be captured etching terminal, into
And stop etching.
On the basis of aforementioned embodiments, the material of metal layer is molybdenum or titanium.When dry etching, etching gas generates
Plasma can be reacted with molybdenum or titanium, and reaction product can rapidly and accurately be detected by EPD it is specific and effective
Wavelength, wavelength change can be formed, so as to effectively be captured etching terminal, and then stop etching.
The fusing point of molybdenum or titanium is higher, can avoid being damaged by high temperature in etching process and follow-up process.
On the basis of aforementioned embodiments, metal oxide layer is ITO layer.When dry etching, what etching gas generated
Plasma can be reacted with ITO, and reaction product can quickly and accurately be detected specific and effective wave by EPD
It is long, wavelength change can be formed, so as to effectively be captured etching terminal, and then stops etching.In addition, ITO layer is with resistance to
The advantages of high temperature, can avoid being damaged by high temperature in etching process and follow-up process.
On the basis of aforementioned embodiments, the thickness of etching terminal marker 130 is 10nm~20nm.Work as etching terminal
When the thickness of marker 130 is 10nm~20nm, there is certain flexibility, the soft of flexible display substrates 100 can not influenced
While property, etching cavity is avoided to pollute.
On the basis of aforementioned embodiments, buffer layer 120 is silicon oxide layer.Silicon oxide layer plays buffering and barrier water oxygen
Effect.
On the basis of aforementioned embodiments, flexible substrate 110 include the first organic flexible substrate 111, separate layer 112 with
And the second organic flexible substrate 116.Wherein, the first organic flexible substrate 111 and the second organic flexible substrate 116 are located at point
The both sides of interlayer 112.
Wherein, separate layer 112 includes silicon oxide layer 113, silicon nitride layer 114 and the a-Si layer 115 stacked gradually.
Wherein, silicon oxide layer 113 plays the role of obstructing water oxygen with silicon nitride layer 114, and a-Si layers 115 have certain glue
Degree plays the role of connecting silicon nitride layer 114 and the second organic flexible substrate 116.
Certainly, separate layer 113 is not limited to above-mentioned material, and can also be other can either play compartmentation and can rise
To the functional layer of barrier water oxygen effect.
On the basis of aforementioned embodiments, the first organic flexible substrate 111 and the second organic flexible substrate 116 are PI
Layer.In traditional etching process, etching gas generate plasma reacted with PI after reaction product cannot be accurate by EPD
Detect specific and effective wavelength.And in the flexible display substrates 100 of the present invention, refer to due to being formed with etching terminal on PI layers
Show layer 130, therefore the PI layers of damage that is etched can be avoided exposed and pollute chamber.
Certainly, the material of the first organic flexible substrate 111 and the second organic flexible substrate 116 is without being limited thereto, can also be
The organic flexible substrate of other materials.
It should be noted that flexible substrate 110 is not limited to the above embodiment, can also be other forms.For example, may be used also
Think the PI layers of single layer.
It is etched since etching terminal marker is between flexible substrate and buffer layer in above-mentioned flexible display substrates
Cheng Zhong, when the interface of dry etching buffer layer to buffer layer and etching terminal marker, etching terminal can be crawled.Cause
This, etching process can stop in time, avoid causing flexible substrate exposed, so as to avoid etching cavity from polluting, be conducive to
Using.
In addition, when flexible display substrates using the present invention perform etching, since single-chamber management and control, maintenance frequency need not be carried out
Rate need not be promoted, and can effectively promote board mobility.
The preparation method of the flexible display substrates of one embodiment, includes the following steps：
S10, flexible substrate 110 is provided.
Preferably, flexible substrate 110 includes the first organic flexible substrate 111, separate layer 112 and the second organic flexible base
Bottom 116.Wherein, the first organic flexible substrate 111 and the second organic flexible substrate 116 are located at the both sides of separate layer 112.
Wherein, separate layer 112 includes silicon oxide layer 113, silicon nitride layer 114 and the a-Si layer 115 stacked gradually.
Wherein, silicon oxide layer 113 plays the role of obstructing water oxygen with silicon nitride layer 114, and a-Si layers 115 have certain glue
Degree plays the role of connecting silicon nitride layer 114 and the second organic flexible substrate 116.
S20, etching terminal marker 130 is formed in flexible substrate 110.
CVD techniques may be used and form etching terminal marker 130 in flexible substrate 110.
Preferably, etching terminal marker 130 is a-Si layers, silicon nitride layer or silicon oxynitride layer.
Preferably, etching terminal marker 130 is metal layer or metal oxide layer.
More preferably, the material of metal layer is molybdenum or titanium.
More preferably, metal oxide layer is ITO layer.
Preferably, the thickness of etching terminal marker is 10nm~20nm.
S30, buffer layer 120 is formed on etching terminal marker 130.Wherein, etching terminal marker 130 is to when quarter
Etching terminal is indicated when losing buffer layer 120.
CVD techniques may be used and form buffer layer 120 on etching terminal marker 130.
Preferably, buffer layer 120 is silicon oxide layer.
In the flexible display substrates being prepared using the preparation method of above-mentioned flexible display substrates, since etching terminal refers to
Show layer between flexible substrate and buffer layer, in etching process, when dry etching buffer layer to buffer layer and etching terminal refers to
When showing the interface of layer, etching terminal can be crawled.Therefore, etching process can stop in time, avoid causing flexible substrate naked
Dew, so as to avoid etching cavity from polluting, is conducive to apply.
In addition, when flexible display substrates using the present invention perform etching, since single-chamber management and control, maintenance frequency need not be carried out
Rate need not be promoted, and can effectively promote board mobility.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of flexible display substrates, which is characterized in that including flexible substrate, buffer layer and positioned at the flexible substrate with
Etching terminal marker between the buffer layer；The etching terminal marker when buffer layer described in the dry etching referring to
Show etching terminal.
2. flexible display substrates according to claim 1, which is characterized in that the etching terminal marker be a-Si layers,
Silicon nitride layer or silicon oxynitride layer.
3. flexible display substrates according to claim 1, which is characterized in that the etching terminal marker be metal layer or
Person's metal oxide layer.
4. flexible display substrates according to claim 3, which is characterized in that the material of the metal layer is molybdenum or titanium.
5. flexible display substrates according to claim 3, which is characterized in that the metal oxide layer is ITO layer.
6. flexible display substrates according to claim 1, which is characterized in that the thickness of the etching terminal marker is
10nm~20nm.
7. flexible display substrates according to claim 6, which is characterized in that the buffer layer is silicon oxide layer.
8. flexible display substrates according to claim 1, which is characterized in that the flexible substrate includes：
First organic flexible substrate；
Separate layer, the separate layer include the silicon oxide layer, silicon nitride layer and a-Si layer stacked gradually；
And the second organic flexible substrate；
Wherein, the first organic flexible substrate is located at the both sides of the separate layer with the second organic flexible substrate.
9. flexible display substrates according to claim 1, which is characterized in that the first organic flexible substrate and described the
Two organic flexible substrates are PI layers.
10. a kind of preparation method of flexible display substrates, which is characterized in that include the following steps：
Flexible substrate is provided；
Etching terminal marker is formed in the flexible substrate；
And form buffer layer on the etching terminal marker；
Wherein, the etching terminal marker when etching the buffer layer indicating etching terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810053538.7A CN108320668A (en) | 2018-01-19 | 2018-01-19 | Flexible display substrates and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810053538.7A CN108320668A (en) | 2018-01-19 | 2018-01-19 | Flexible display substrates and preparation method thereof |
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| CN109979947A (en) * | 2019-04-17 | 2019-07-05 | 昆山国显光电有限公司 | The preparation method of display device and display device |
| US11443658B2 (en) | 2018-11-29 | 2022-09-13 | Kunshan Go-Visionox Opto-Electronics Co., Ltd | Flexible display panels, manufacturing methods thereof and flexible display apparatuses |
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Application publication date: 20180724 |