CN110085531B - Wafer temperature distribution detection method - Google Patents
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- 238000001514 detection method Methods 0.000 title abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 96
- 238000012544 monitoring process Methods 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000012886 linear function Methods 0.000 claims description 4
- 238000012887 quadratic function Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 4
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- 239000002253 acid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention provides a method for detecting the temperature distribution of a wafer, which detects the wet etching rate of a plurality of monitoring points on the wafer; and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points, thereby obtaining the temperature distribution condition of the wafer. On one hand, the operation of detecting the wet etching rate of a plurality of monitoring points on the wafer is convenient, and the whole process does not need to be stopped, so that the detection can be carried out without stopping, and the operation is very convenient. On the other hand, the cost is lower because a thermocouple is not needed. On the other hand, the wet etching rate of more distribution points on the surface of the wafer can be detected by setting more monitoring points, and the sampling rate is relatively high, so that the temperature distribution condition of the obtained wafer is more real, and the practicability is higher.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for detecting temperature distribution of a wafer.
Background
In semiconductor processing, as semiconductor dimensions are decreasing, non-uniformity of wafer temperature distribution has a greater and greater influence on the processing in the semiconductor processing process, and therefore, detection of wafer temperature distribution is becoming more and more important. However, it is increasingly difficult to detect the temperature distribution of the wafer, for example, the temperature sensor line of the tool can only detect the temperature of one point on the wafer. In addition, there is a conventional method for detecting the Wafer surface temperature by a Thermocouple (TC Wafer), however, the Thermocouple provided by the semiconductor equipment manufacturer is generally expensive and complicated in detection means, but the detected temperature point is limited (generally within a dozen or so depending on the number of measurement points of the Thermocouple). In addition, in some processes, the temperature of the wafer surface cannot be measured by a thermocouple, for example, in a high density plasma chemical vapor deposition (HDP CVD) process, since the temperature of the wafer surface is controlled by an ion discharge during the reaction, the measurement point of the thermocouple cannot be set, so that the distribution of the temperature of the wafer surface is difficult to be effectively detected in the processes like this.
Disclosure of Invention
The invention aims to provide a method for detecting wafer temperature distribution, which aims to solve the problem that the existing method cannot meet the detection requirement of the wafer temperature distribution.
In order to solve the above technical problem, the present invention provides a method for detecting a wafer temperature distribution, which comprises:
detecting the wet etching rate of a plurality of monitoring points on a wafer;
and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points through a temperature-wet etching rate relation equation, thereby obtaining the temperature distribution condition of the wafer.
Optionally, in the method for detecting the temperature distribution of the wafer, the determining of the temperature-wet etching rate relation equation includes:
adjusting the temperature, and collecting wet etching rate data of the wafer at different temperatures;
and fitting to obtain the temperature-wet etching rate relation equation according to the wet etching rate data at different temperatures.
Optionally, in the method for detecting the temperature distribution of the wafer, the temperature-wet etching rate relation equation is a linear function or a quadratic function of the temperature with respect to the wet etching rate.
Optionally, in the method for detecting the temperature distribution of the wafer, the temperature-wet etching rate relation equation is as follows:
y＝0.0037x2-5.465x+2036.6
wherein y is the temperature and x is the wet etch rate.
Optionally, in the method for detecting the temperature distribution of the wafer, the adjustment temperature is in a range of 430 ℃ to 505 ℃.
Optionally, in the method for detecting the temperature distribution of the wafer, the collected wet etching rate ranges from
In the meantime.
Optionally, in the method for detecting the temperature distribution of the wafer, the distance between the monitoring points is 15mm to 60 mm.
Optionally, in the method for detecting the temperature distribution of the wafer, the diameter of the wafer is 300mm, the number of the monitoring points is 49, and the monitoring points are uniformly distributed on the wafer.
Optionally, in the method for detecting the temperature distribution of the wafer, the method for detecting the temperature distribution of the wafer is applied to a thin film deposition process.
Optionally, in the method for detecting the temperature distribution of the wafer, the wet etching rate of the wafer is calculated by measuring the thickness of the wafer at the monitoring point after wet etching
In summary, in the method for detecting the temperature distribution of the wafer provided by the invention, the wet etching rate of a plurality of monitoring points on one wafer is detected; and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points, thereby obtaining the temperature distribution condition of the wafer. On one hand, the operation of detecting the wet etching rate of a plurality of monitoring points on the wafer is convenient, and the whole process does not need to be stopped, so that the detection can be carried out without stopping, and the operation is very convenient. On the other hand, the cost is lower because a thermocouple is not needed. On the other hand, the wet etching rate of more distribution points on the surface of the wafer can be detected by setting more monitoring points, and the sampling rate is relatively high, so that the temperature distribution condition of the obtained wafer is more real, and the practicability is higher.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention. Wherein:
FIG. 1 is a graph illustrating a wet etch rate profile of a wafer surface according to an embodiment of the present invention;
FIG. 2 is a temperature profile of the wafer surface calculated from the wet etch rate profile of the wafer surface of FIG. 1;
FIG. 3 is a diagram illustrating a distribution of monitoring points on a wafer surface according to an embodiment of the present invention;
FIG. 4 is a graph of temperature versus wet etch rate provided by an embodiment of the present invention.
In the drawings:
100-a wafer; 110-monitoring points; 120-original temperature-wet etching rate relation; 130-temperature-wet etch rate equation.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise.
The invention provides a method for detecting the temperature distribution of a wafer, which comprises the following steps: detecting Wet etching rates (Wet Etch Rate, WER) of a plurality of monitoring points on a wafer; and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points through a temperature-wet etching rate relation equation, thereby obtaining the temperature distribution condition of the wafer. According to the method for detecting the temperature distribution of the wafer, on one hand, the operation of detecting the wet etching rate of a plurality of monitoring points on the wafer is convenient, and the whole process does not need to be stopped, so that the detection can be carried out without stopping, and the method is very convenient. On the other hand, the cost is lower because a thermocouple is not needed. On the other hand, the wet etching rate of more distribution points on the surface of the wafer can be detected by setting more monitoring points, and the sampling rate is relatively high, so that the temperature distribution condition of the obtained wafer is more real, and the practicability is higher.
The following description refers to the accompanying drawings. Referring to fig. 1 to 4, fig. 1 is a diagram illustrating a distribution of wet etching rates of a wafer surface according to an embodiment of the present invention, fig. 2 is a diagram illustrating a temperature distribution of the wafer surface calculated according to the distribution of wet etching rates of the wafer surface of fig. 1, fig. 3 is a diagram illustrating a monitoring point of the wafer surface according to an embodiment of the present invention, and fig. 4 is a diagram illustrating a relationship between a temperature and a wet etching rate according to an embodiment of the present invention.
In this embodiment, a wafer is provided, a plurality of monitoring points are set on the wafer, the wet etching rates of the monitoring points are detected, and according to the wet etching rates of all the monitoring points, the temperatures of all the monitoring points on the wafer are calculated through a preset temperature-wet etching rate relation equation, so as to obtain the temperature distribution condition of the wafer.
Preferably, the establishing of the temperature-wet etching rate relation equation comprises: adjusting the temperature, and collecting wet etching rate data of the wafer at different temperatures; and fitting to obtain the temperature-wet etching rate relation equation according to the wet etching rate data at different temperatures. Specifically, different wet etching rates of the wafer under different temperature conditions can be collected by adjusting the temperature, so as to form a temperature-wet etching rate relation table. More preferably, the temperature is adjusted within a range of 430-505 ℃, and the collected wet etching rate is within a range of
And can be adapted to most needs. The inventor finds that wet etching rate WER is inversely related to the compactness of a film deposited on the surface of a wafer, temperature influences the compactness of the film, the higher the temperature is, the better the compactness of the film is, the lower the wet etching rate is, and conversely, the poorer the compactness of the film is, the higher the wet etching rate is; the compactness of the film can be influenced by adjusting the temperature of the film growth so as toWhich affects the wet etch rate WER. Furthermore, the wet etching rates WER at a plurality of different temperatures are collected, and the corresponding relationship between the two wet etching rates can be used for forming a temperature-wet etching rate relationship table. Furthermore, a plurality of groups of temperature-wet etching rate relations which correspond to one another in the temperature-wet etching rate relation table are fitted to obtain a temperature-wet etching rate relation equation.
Preferably, the temperature-wet etching rate relation equation is a linear function or a quadratic function of the temperature relative to the wet etching rate. Referring to FIG. 4, a graph of the relationship between temperature and wet etching rate for several groups is shown, wherein the abscissa represents the wet etching rate in units of
In/min, the ordinate is the temperature in degrees C. In the figure, the original temperature-wet etching rate relation 120 obtained by adjusting temperature collection is fitted to obtain a temperature-wet etching rate relation equation 130, and according to the original temperature-wet etching rate relation 120 shown in fig. 4, the temperature-wet etching rate relation equation 130 obtained by fitting is:
y＝0.0037x2-5.465x+2036.6
wherein y is the temperature and x is the wet etch rate.
It should be understood that the temperature-wet etching rate relation equation 130 is obtained by fitting a plurality of sets of corresponding original temperature-wet etching rate relations 120, the temperature-wet etching rate relation equation is not a uniquely determined solution, the temperature-wet etching rate relation equation is not limited to a quadratic function relation, and the plurality of sets of corresponding temperature-wet etching rate relations can be fitted to a linear function relation according to the accuracy and different requirements, which is not limited in the present invention.
Preferably, in this embodiment, the method for detecting the temperature distribution of the wafer is mainly applied to the thin film deposition process, and as described in the background art, in some thin film deposition processes, since the thin film deposition occurs on the surface of the wafer, it is difficult to set the measurement point of the thermocouple generally by using a wet etching process after the film formation on the surface of the wafer. In this embodiment, the wet etching rate of the wafer can be calculated by measuring the thickness of the wafer at the monitoring point after wet etching. Specifically, after a film with a preset thickness grows on the wafer, wet etching is carried out through an acid tank, the thickness of the wafer is measured, particularly the thickness of the film after the wet etching, and the thickness of the wet etching in unit time, namely the wet etching rate WER, can be calculated. On one hand, the operation of detecting the wet etching rate of a plurality of monitoring points on the wafer is convenient, and the whole process does not need to be stopped, so that the detection can be carried out without stopping, and the operation is very convenient. On the other hand, the cost is lower because a thermocouple is not needed.
After a temperature-wet etching rate relation equation is established, the temperature of any monitoring point can be calculated according to the equation. The density of monitoring points placed on the wafer and the spacing between monitoring points (i.e., sampling rate) can affect the accuracy and authenticity of the final wafer temperature profile. The higher the density of the set monitoring points is, the smaller the distance between the monitoring points is, the truer the temperature distribution condition of the obtained wafer is, and the higher the accuracy is. However, the density of the monitoring points is too high, and the distance between the monitoring points is too small, so that the wafer has certain thermal inertia, so that the wafer is not necessary, and the practicability is reduced. Too low a density of monitoring points and too large a spacing between monitoring points may reduce the accuracy of the resulting temperature profile of the wafer. Preferably, when the distance between a plurality of monitoring points on the wafer is 15 mm-60 mm, the more accurate temperature distribution condition of the wafer can be obtained, and the practical significance is higher.
Preferably, as shown in fig. 3, the diameter of the wafer 100 is 300mm, and the number of the monitoring points 110 is 49, and the monitoring points are uniformly distributed on the wafer 100. Table 1 below shows the coordinates (in mm) of the 49 monitoring points 110, where the center of the wafer 100 is the origin of the coordinates:
TABLE 1
| X | Y | X | Y | X | Y | X | Y |
| 0.0000 | 0.0000 | 97.9995 | 0.0000 | 38.0460 | 141.9915 | -73.5000 | -127.3070 |
| 0.0000 | 49.0005 | 90.5400 | -37.5030 | 73.5000 | 127.3065 | -103.9440 | -103.9460 |
| 34.6485 | 34.6485 | 69.2970 | -69.2955 | 103.9455 | 103.9455 | -127.3050 | -73.5000 |
| 49.005 | 0.0000 | 37.5030 | -90.5400 | 127.3065 | 73.5000 | -141.9920 | -38.0475 |
| 34.6485 | -34.6485 | 0.0000 | -97.9995 | 141.9915 | 38.0475 | -147.0000 | 0.0000 |
| 0.0000 | -49.0005 | -37.5030 | -90.5400 | 147.0000 | 0.0000 | -141.9920 | 38.0460 |
| -34.6485 | -34.6485 | -69.2955 | -69.2970 | 141.9915 | -38.0460 | -127.3070 | 73.4985 |
| -49.0005 | 0.0000 | -90.5400 | -37.5030 | 127.3065 | -73.5000 | -103.9460 | 103.9440 |
| -34.6485 | 34.6485 | -97.9995 | 0.0000 | 103.9455 | -103.9440 | -73.5015 | 127.3050 |
| 0.0000 | 97.9995 | -90.5400 | 37.5030 | 73.5000 | -127.3070 | -38.0475 | 141.9915 |
| 37.5030 | 90.5400 | -69.2970 | 69.2955 | 38.0475 | -141.9920 | ||
| 69.2955 | 69.2970 | -37.5030 | 90.5400 | 0.0000 | -147.0000 | ||
| 90.5400 | 37.5030 | 0.0000 | 147.0000 | -38.0460 | -141.9920 |
It should be understood that the monitoring points 110 are uniformly distributed on the wafer 100, and may be distributed in a grid pattern, or may be distributed circumferentially around the center of the wafer 100. In addition, the number of the monitoring points 110 is not limited to 49, and those skilled in the art can set the monitoring points according to the requirement of sampling precision, which is not limited by the present invention. The wet etching rate of more distribution points on the surface of the wafer 100 is detected by arranging more monitoring points 110, and the sampling rate is relatively high, so that the temperature distribution condition of the wafer 100 is more real and the practicability is higher.
As shown in fig. 1, which is a graph illustrating a wet etching rate distribution of a surface of a wafer 100 according to an embodiment of the present invention, wherein the wet etching rate is in a range
In the meantime. Dividing the whole wet etching rate range into 10 adjacent intervals, and increasing the interval progressively
It should be understood that the intervals illustrated in each of the figures in FIG. 1 are open and closed intervals, i.e., [379.8, 382.0 ], except that the first interval is a fully closed interval]，(382.0，384.2]…(399.6，401.8]。
As shown in fig. 2, which is a temperature distribution graph of the wafer surface calculated according to fig. 1, the temperature range of the wafer 100 surface can be calculated to be between 438.2 ℃ and 494.8 ℃ according to the established temperature-wet etching rate relation equation and the range of the wet etching rate. The entire temperature range was also divided into 10 contiguous intervals, each of which was incremented by 5.66 ℃. Similarly, the intervals shown in each example in fig. 2 are all open-close intervals, i.e., [438.2, 443.9], (443.9, 449.5] … (489.1, 494.8], except that the first interval is the fully-closed interval, and the temperature distribution map of the wafer surface in fig. 2 reflects the temperature distribution of the wafer obtained by the wafer temperature distribution detection method according to the present embodiment objectively and accurately.
It should be understood that the illustration of fig. 1 and 2 is only an exemplary result obtained by the method for detecting the temperature distribution of the wafer according to the present embodiment, and is not limited thereto, and the range of the wet etching rate of the wafer surface is not limited thereto
Temperature range of the wafer surfaceThe temperature is not limited to 438.2-494.8 ℃, and particularly, the calculation is not limited to the temperature-wet etching rate relation equation, and those skilled in the art can make reasonable arrangement and replacement according to different conditions, and the invention is not limited thereto.
In summary, in the method for detecting the temperature distribution of the wafer provided by the invention, the wet etching rate of a plurality of monitoring points on one wafer is detected; and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points, thereby obtaining the temperature distribution condition of the wafer. On one hand, the operation of detecting the wet etching rate of a plurality of monitoring points on the wafer is convenient, and the whole process does not need to be stopped, so that the detection can be carried out without stopping, and the operation is very convenient. On the other hand, the cost is lower because a thermocouple is not needed. On the other hand, the wet etching rate of more distribution points on the surface of the wafer can be detected by setting more monitoring points, and the sampling rate is relatively high, so that the temperature distribution condition of the obtained wafer is more real, and the practicability is higher.
It should be noted that the above description is only for describing the preferred embodiments of the present invention, and not for limiting the scope of the present invention, and that any changes and modifications made by those skilled in the art in light of the above disclosure are all within the scope of the appended claims.
Claims (9)
1. A method for detecting the temperature distribution of a wafer is used for detecting the temperature of the wafer in a high-density plasma chemical vapor deposition process, and is characterized by comprising the following steps:
providing a wafer, wherein a film with a preset thickness grows on the surface of the wafer, and the film is formed by utilizing a high-density plasma chemical vapor deposition process;
detecting the wet etching rate of a plurality of monitoring points on the wafer;
and calculating the temperature of all the monitoring points on the wafer according to the wet etching rate of all the monitoring points through a temperature-wet etching rate relation equation, thereby obtaining the temperature distribution condition of the wafer.
2. The method for detecting the temperature distribution of the wafer as claimed in claim 1, wherein the establishing of the temperature-wet etching rate relation equation comprises:
adjusting the temperature, and collecting wet etching rate data of the wafer at different temperatures;
and fitting to obtain the temperature-wet etching rate relation equation according to the wet etching rate data at different temperatures.
3. The method for detecting the temperature distribution of the wafer as claimed in claim 2, wherein the temperature-wet etching rate relation equation is a linear function or a quadratic function of the temperature with respect to the wet etching rate.
4. The method for detecting the temperature distribution of the wafer as claimed in claim 3, wherein the temperature-wet etching rate relation equation is as follows:
wherein,
it is the temperature that is set for the purpose,
is the wet etch rate.
5. The method as claimed in claim 2, wherein the temperature adjustment range is 430-505 ℃.
6. The method as claimed in claim 2, wherein the collected wet etching rate ranges from 370 Å/min to 405 Å/min.
7. The method as claimed in claim 1, wherein the distance between the monitoring points is 15 mm-60 mm.
8. The method as claimed in claim 7, wherein the diameter of the wafer is 300mm, the number of the monitoring points is 49, and the monitoring points are uniformly distributed on the wafer.
9. The method for detecting the temperature distribution of the wafer as claimed in claim 1, wherein the wet etching rate of the wafer is calculated by measuring the thickness of the wafer at the monitoring point after the wet etching.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050423A (en) * | 2012-12-20 | 2013-04-17 | 上海宏力半导体制造有限公司 | Wafer temperature detection method |
| CN104730858A (en) * | 2013-12-20 | 2015-06-24 | 台湾积体电路制造股份有限公司 | Uniformity in Wafer Patterning using Feedback Control |
| CN104865178A (en) * | 2015-04-20 | 2015-08-26 | 安徽立光电子材料股份有限公司 | Method for rapid detection of SiO2 film thickness and film compact |
| CN108140571A (en) * | 2015-09-30 | 2018-06-08 | 东京毅力科创株式会社 | For the method and apparatus of the temperature of dynamic control wet etch process |
| CN208315508U (en) * | 2018-03-27 | 2019-01-01 | 武汉新芯集成电路制造有限公司 | A kind of wafer temperature detection system |
| CN109473381A (en) * | 2018-10-31 | 2019-03-15 | 上海华力微电子有限公司 | Wet etching cleaning device and method |
-
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- 2019-04-23 CN CN201910330689.7A patent/CN110085531B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050423A (en) * | 2012-12-20 | 2013-04-17 | 上海宏力半导体制造有限公司 | Wafer temperature detection method |
| CN104730858A (en) * | 2013-12-20 | 2015-06-24 | 台湾积体电路制造股份有限公司 | Uniformity in Wafer Patterning using Feedback Control |
| CN104865178A (en) * | 2015-04-20 | 2015-08-26 | 安徽立光电子材料股份有限公司 | Method for rapid detection of SiO2 film thickness and film compact |
| CN108140571A (en) * | 2015-09-30 | 2018-06-08 | 东京毅力科创株式会社 | For the method and apparatus of the temperature of dynamic control wet etch process |
| CN208315508U (en) * | 2018-03-27 | 2019-01-01 | 武汉新芯集成电路制造有限公司 | A kind of wafer temperature detection system |
| CN109473381A (en) * | 2018-10-31 | 2019-03-15 | 上海华力微电子有限公司 | Wet etching cleaning device and method |
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