CN117116833A - Wafer registration calibration value acquisition method, device and calibration method - Google Patents

Wafer registration calibration value acquisition method, device and calibration method Download PDF

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Publication number
CN117116833A
CN117116833A CN202311210475.9A CN202311210475A CN117116833A CN 117116833 A CN117116833 A CN 117116833A CN 202311210475 A CN202311210475 A CN 202311210475A CN 117116833 A CN117116833 A CN 117116833A
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China
Prior art keywords
wafer
distance
target wafer
measurement points
calibration value
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CN202311210475.9A
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Chinese (zh)
Inventor
沈万武
付超群
姚磐
张京晶
谢益诚
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Maxscend Microelectronics Co ltd
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Maxscend Microelectronics Co ltd
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Priority to CN202311210475.9A priority Critical patent/CN117116833A/en
Publication of CN117116833A publication Critical patent/CN117116833A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The application relates to a wafer superposition calibration acquisition method, a device and a calibration method, which comprise the following steps: obtaining the film thickness of at least one group of measuring points on the target wafer, wherein the measuring points in the same group are distributed from the edge of the target wafer to the center of the target wafer; determining mutation points in the same group of measurement points, wherein the mutation points are measurement points of film thickness mutation; obtaining a trimming distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points; and obtaining a wafer coincidence calibration value according to the trimming distance. The wafer coincidence calibration value is applied to calibration of the mechanical arm, so that when a subsequent wafer is placed into the deposition chamber by the mechanical arm, the center of the wafer can coincide with the center of the base in the deposition chamber, and the thin film on the wafer is more uniform. According to the method for acquiring the wafer registration calibration value, the calibration method is quantized, so that the calibration process becomes controllable, and the calibration efficiency is improved.

Description

Wafer registration calibration value acquisition method, device and calibration method
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a method and apparatus for obtaining a wafer registration calibration value, and a calibration method.
Background
With the development of semiconductor technology, thin film deposition becomes an important link in semiconductor manufacturing, and whether a wafer can be coincident with a susceptor has an important influence on the uniformity of thin film deposition.
In the conventional technology, a wafer placed in a chamber is generally initially adjusted before the deposition chamber is closed, and an engineer observes the contact ratio between the wafer and a susceptor in the chamber with naked eyes to perform rough adjustment. And then, sending the monitoring wafer into a deposition chamber to deposit the film, and observing whether the film deposited on the monitoring wafer is concentric with the wafer again by naked eyes of an engineer, and calibrating a mechanical arm of the deposition chamber through experience of the engineer, so that the wafer sent into the deposition chamber by the mechanical arm subsequently coincides with the center of the base.
However, the current calibration method depends on experience of engineers, cannot be quantified, and human vision has errors, so that the calibration process is uncontrollable, multiple calibrations may be required to make centers of the wafer and the base coincide, and efficiency is low.
Disclosure of Invention
Accordingly, it is necessary to provide a method, an apparatus and a method for obtaining a wafer registration calibration value for solving the problem that the center calibration of both the wafer and the susceptor cannot be quantified in the conventional technology.
In order to achieve the above object, in one aspect, the present application provides a method for obtaining a wafer calibration value, including:
obtaining the film thickness of at least one group of measuring points on a target wafer, wherein the measuring points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
determining mutation points in the same group of measurement points, wherein the mutation points are measurement points of film thickness mutation;
obtaining a trimming distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points;
and obtaining a wafer coincidence calibration value according to the trimming distance.
According to the wafer calibration value acquisition method, the edge removal distance is calculated by finding the film thickness mutation point in the measurement point, the wafer coincidence calibration value is acquired, and the wafer coincidence calibration value is applied to the calibration of the mechanical arm, so that when the subsequent wafer is placed into the deposition chamber by the mechanical arm, the center of the wafer can coincide with the center of the base in the deposition chamber, and the film on the wafer is more uniform. According to the method for acquiring the wafer registration calibration value, the calibration method is quantized, so that the calibration process becomes controllable, and the calibration efficiency is improved.
In one embodiment, the obtaining the film thickness of at least one set of measurement points on the target wafer includes:
the film thickness of two groups of measurement points oppositely arranged in the first direction is obtained.
In one embodiment, the obtaining the trimming distance from the center of the target wafer to the direction of the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points includes:
acquiring a first trimming distance and a second trimming distance according to the mutation points in the two groups of measurement points oppositely arranged in the first direction;
according to the trimming distance, obtaining a wafer registration calibration value comprises the following steps:
and acquiring a wafer coincidence calibration value in the first direction according to the first trimming distance and the second trimming distance.
In one embodiment, the obtaining the wafer registration calibration value in the first direction according to the first trimming distance and the second trimming distance includes:
calculating a wafer registration calibration value in a first direction according to the following formula:
(EBR 1 +EBR 2 )/2-EBR 2 wherein EBR 1 For a first edging distance, EBR 2 Is the second trimming distance.
In one embodiment, the obtaining the film thickness of at least one set of measurement points on the target wafer further includes:
and obtaining film thicknesses of two groups of measurement points oppositely arranged in a second direction, wherein the second direction intersects with the first direction.
In one embodiment, the second direction is perpendicular to the first direction.
In one embodiment, the obtaining the trimming distance from the center of the target wafer to the direction of the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points includes:
acquiring a first trimming distance and a second trimming distance according to the mutation points in the two groups of measurement points oppositely arranged in the first direction;
acquiring a third trimming distance and a fourth trimming distance according to the abrupt change points in the two groups of measurement points oppositely arranged in the second direction;
according to the trimming distance, obtaining a wafer registration calibration value comprises the following steps:
acquiring a wafer coincidence calibration value in a first direction according to the first trimming distance and the second trimming distance;
and acquiring a wafer coincidence calibration value in the second direction according to the third trimming distance and the fourth trimming distance.
The application also provides a calibration method, which comprises the following steps:
providing a target wafer;
placing the target wafer on a base in a deposition chamber through a mechanical arm, and depositing a film;
measuring the film thickness of at least one group of measuring points on the target wafer;
according to the wafer registration calibration value obtaining method in any of the embodiments, a wafer registration calibration value is obtained;
and calibrating parameters of the mechanical arm according to the wafer coincidence calibration value.
In one embodiment, the calibrating the parameters of the robot arm according to the wafer registration calibration value includes:
and calibrating the extension parameters of the mechanical arm according to the wafer coincidence calibration value.
The application also provides a wafer registration calibration value acquisition device, which comprises:
the first acquisition module is used for acquiring the film thickness of at least one group of measurement points on a target wafer, and the measurement points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
the determining module is used for determining mutation points in the same group of measurement points, wherein the mutation points are measurement points with the mutation of film thickness;
the second acquisition module is used for acquiring a trimming distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points;
and the third acquisition module is used for acquiring the wafer coincidence calibration value according to the trimming distance.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is a flow chart of a wafer registration calibration acquisition method provided in one embodiment;
FIG. 2 is a schematic diagram of measurement points provided in one embodiment;
FIG. 3 is a schematic diagram of a rectangular coordinate system on a wafer according to one embodiment;
FIG. 4 is a schematic diagram of the shape of a wafer deposited film before and after alignment, as provided in one embodiment.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Embodiments of the application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.
In one embodiment, a calibration method is provided, comprising:
step S100, providing a target wafer;
step S200, placing a target wafer on a base in a deposition chamber through a mechanical arm, and depositing a film;
step S300, measuring the film thickness of at least one group of measuring points on the target wafer;
step S400, acquiring a wafer registration calibration value according to the wafer registration calibration value acquisition method;
step S500, calibrating parameters of the mechanical arm according to the wafer registration calibration value.
In step S100, the target wafer may be a monitor wafer, that is, the target wafer is only used to measure the thickness of the film thereon, and no subsequent other processing is performed; the target wafer may also be a process wafer, i.e., the target wafer may be used in subsequent other processing operations, without limitation. The target wafer may be fabricated from a silicon material.
In step S200, the robot arm places a target wafer on a susceptor in a deposition chamber through a base parameter, and the target wafer deposits a thin film in the deposition chamber. For example, the film deposited on the target wafer may be an advanced pattern film (Advanced Pattern Film, APF). The advanced pattern film is a photoetching hard mask of amorphous carbon, is widely applied to the chip manufacturing process of 65nm and below, and is usually deposited by adopting a chemical vapor deposition method. The advanced pattern film can improve etching precision and avoid deformation and photoresist pouring. At this time, the deposition chamber is an advanced pattern thin film deposition chamber, which is a high temperature opaque closed chamber. Therefore, when the advanced pattern film deposition chamber is adopted to process the target wafer, whether the center of the base in the chamber is coincident with the center of the target wafer cannot be synchronously detected on line.
In addition, the method further includes performing a preliminary adjustment on the target wafer such that the target wafer is proximate to a center of the susceptor in the deposition chamber prior to step S200.
In step S300, the film thickness of at least one set of measurement points on the target wafer is measured, and the target wafer may be transferred from the deposition chamber to the measurement chamber for film thickness measurement. A measurement program is established in the measurement chamber to measure the film thickness of the target wafer at the measurement points, and specifically, the measurement points can be set from the edge of the target wafer to the center direction of the target wafer.
In step S400, a wafer registration calibration value is obtained according to the wafer registration calibration obtaining method.
In step S500, the parameters of the robot arm are calibrated according to the wafer registration calibration values, i.e. the base parameters of the robot arm are calibrated. As an example, the wafer registration calibration value may be used to calibrate an extension parameter of the robot arm, specifically, the robot arm has a preset extension value, and the wafer registration calibration value and the preset extension value are summed to obtain an extension value after the calibration of the robot arm, thereby obtaining a position after the calibration of the robot arm.
In this embodiment, by acquiring the wafer registration calibration value, the robotic arm is automatically calibrated, so that when a subsequent wafer is placed into the deposition chamber by the robotic arm, the center of the wafer may be coincident with the center of the susceptor in the deposition chamber, thereby making the thin film deposited on the wafer more uniform. Further, referring to fig. 4, a baffle ring disposed at the edge of the wafer may function better when the center of the wafer coincides with the center of the susceptor.
In one embodiment, referring to fig. 1 and 2, a method for obtaining a wafer registration calibration value is provided, including:
step S410, obtaining the film thickness of at least one group of measurement points on the target wafer, wherein the measurement points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
step S420, determining a mutation point in the same group of measurement points, wherein the mutation point is a measurement point of film thickness mutation;
step S430, obtaining a trimming distance from the center of the target wafer to the direction of the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points;
in step S440, a wafer registration calibration value is obtained according to the trimming distance.
In step S410, at least one set of measurement points is set on the target wafer, and the set of measurement points is distributed from the edge of the target wafer to the center thereof, where the number of measurement points in the set is not limited, and may be specifically set according to the target wafer. The film thickness of the target wafer on at least one set of measurement points is obtained.
As an example, a target wafer may be selected to be a wafer having a size of 12 inches and a radius of 150mm. The measuring points can be arranged in a ring with the inner ring radius of 142mm from the edge of the target wafer to the direction of the center of the target wafer, and the width of the ring is 8mm. The 11 measuring points can be used as a group, the measuring points of the group are equidistantly arranged, and the distance between the two measuring points can be 0.8mm.
In step S420, in the same set of measurement points, measurement points of abrupt film thickness change are determined, and the measurement points of abrupt film thickness change are abrupt points in the set of measurement points. The film thickness of the abrupt point is different from the film thickness of other points in the group of measurement points, and there is a large difference.
In step S430, a trimming distance in a direction from the center of the target wafer to the mutation point is obtained, where the trimming distance is a distance between the mutation point and an edge of the target wafer corresponding to the group measurement point where the mutation point is located.
As an example, referring to fig. 3, a rectangular coordinate system may be established on the target wafer, with the center of the target wafer as the origin of coordinates, the direction in which the target wafer is fed into the deposition chamber as the positive Y-axis direction, and the vertical Y-axis direction as the X-axis. And calculating the edging distance according to the coordinates of the abrupt points and the coordinates of the measuring points of the edge of the target wafer.
In step S440, a wafer registration calibration value is obtained according to the trimming distance. The acquired wafer registration calibration values may calibrate the position of the target wafer on the base of the deposition chamber such that the centers of the two coincide.
In this embodiment, by finding the film thickness abrupt change point in the measurement point, calculating the trimming distance, and obtaining the wafer registration calibration value, the wafer registration calibration value is applied to the calibration of the mechanical arm, so that when the subsequent wafer is placed into the deposition chamber by the mechanical arm, the center of the wafer can be coincident with the center of the base in the deposition chamber, thereby making the film on the wafer more uniform. According to the method for acquiring the wafer registration calibration value, the calibration method is quantized, so that the calibration process becomes controllable, and the calibration efficiency is improved.
In one embodiment, step S410 includes:
in step S411, the film thicknesses of two sets of measurement points disposed opposite to each other in the first direction are obtained.
Two sets of measuring points are arranged oppositely in the first direction of the target wafer, and the two sets of measuring points are distributed from the edge of the target wafer to the center of the target wafer, so that the number of any one of the two sets of measuring points is not limited. And respectively obtaining the film thickness of the target wafer on the two groups of measurement points.
The first direction is the extending direction of any diameter of the target wafer. As an example, the first direction may be parallel to a direction in which the target wafer is fed into the deposition chamber by the robot.
In one embodiment, step S430 includes:
step S431, obtaining a first trimming distance and a second trimming distance according to the abrupt change points in the two sets of measurement points oppositely arranged in the first direction;
step S440 includes:
in step S441, a wafer registration calibration value in the first direction is obtained according to the first trimming distance and the second trimming distance.
In step S431, a first trimming distance and a second trimming distance are obtained, where the first trimming distance may be a distance from a mutation point in one of the two measurement points set relatively in the first direction to an edge of the target wafer, and the second trimming distance is a distance from the mutation point in the other measurement point to the edge of the target wafer. The sum of the first trimming distance and the second trimming distance may be a certain value.
After the first trimming distance and the second trimming distance are obtained, the first trimming distance and the second trimming distance can be judged, and when the values of the first trimming distance and the second trimming distance are close to each other, the subsequent acquisition of the wafer coincidence calibration value is not needed, namely the mechanical arm of the deposition chamber is not needed to be calibrated and adjusted; when one of the first trimming distance and the second trimming distance is greater than a preset value, a subsequent wafer registration calibration value needs to be obtained, that is, the mechanical arm of the current deposition chamber needs to be calibrated, so that the wafer sent into the wafer seat of the deposition chamber by the mechanical arm coincides with the center of the wafer seat. The preset value may be set according to practical situations, for example, when the target wafer is a 12-inch wafer, the radius thereof is 150mm, and the preset value may be 4mm.
In step S441, a wafer registration calibration value in the first direction is obtained according to the first trimming distance and the second trimming distance. As an example, the wafer registration calibration value in the first direction may be takenThe calculation is performed with the following formula: (EBR) 1 +EBR 2 )/2-EBR 2 Wherein EBR 1 For a first edging distance, EBR 2 Is the second trimming distance. When the value of the first trimming distance is larger than that of the second trimming distance, the wafer coincidence calibration value is positive; when the value of the first trimming distance is smaller than the value of the second trimming distance, the wafer registration calibration value is negative.
In one embodiment, step S410 further includes:
in step S412, the film thicknesses of two sets of measurement points disposed opposite to each other in the second direction are obtained, and the second direction intersects with the first direction.
In step S412, two sets of measurement points are disposed in the second direction of the target wafer, and each of the two sets of measurement points is distributed from the edge of the target wafer to the center thereof, which is not limited by the number of any one of the two sets of measurement points. And respectively obtaining the film thickness of the target wafer on the two groups of measurement points.
The second direction is the extending direction of any diameter of the target wafer. The second direction intersects the first direction. As an example, the first direction may be perpendicular to the second direction. When the first direction is parallel to the direction in which the target wafer is fed into the deposition chamber by the robot, the second direction is perpendicular to the direction in which the target wafer is fed into the deposition chamber by the robot.
In other examples, the second direction may not be perpendicular to the first direction, and is not limited herein. At this time, after the third trimming distance and the fourth trimming distance are obtained according to the abrupt points in the two sets of measurement points oppositely arranged in the second direction, the third trimming distance and the fourth trimming distance can be divided into a value parallel to the direction in which the target wafer is sent into the deposition chamber by the mechanical arm and a value perpendicular to the direction in which the target wafer is sent into the deposition chamber by the mechanical arm, and the third trimming distance and the fourth trimming distance are divided into a value parallel to the direction in which the target wafer is sent into the deposition chamber by the mechanical arm, so that the obtained wafer coincidence calibration value can calibrate the extension parameters of the mechanical arm. In addition, according to the third trimming distance and the fourth trimming distance, the value perpendicular to the direction in which the target wafer is sent into the deposition chamber by the mechanical arm is divided, and the obtained wafer coincidence calibration value can also calibrate the rotation parameter of the mechanical arm.
As an example, a target wafer may be selected to be a wafer having a size of 12 inches and a radius of 150mm. The measuring points can be arranged in a ring with the inner ring radius of 142mm from the edge of the target wafer to the direction of the center of the target wafer, and the width of the ring is 8mm. The 11 measurement points can be used as a group, two groups of measurement points can be respectively and oppositely arranged in the first direction of the target wafer, two groups of measurement points can be respectively and oppositely arranged in the second direction, the four groups of measurement points are equidistantly arranged, and the distance between any two measurement points can be 0.8mm. At this time, the target wafer has 44 measurement points and 4 mutation points.
In one embodiment, step S430 includes:
step S431, obtaining a first trimming distance and a second trimming distance according to the abrupt change points in the two sets of measurement points oppositely arranged in the first direction;
step S432, obtaining the third trimming distance and the fourth trimming distance according to the abrupt change points in the two sets of measurement points oppositely disposed in the second direction.
In step S432, a third trimming distance and a fourth trimming distance are obtained, where the third trimming distance may be a distance from a mutation point in one of the two sets of measurement points set relatively in the second direction to the edge of the target wafer, and the fourth trimming distance is a distance from a mutation point in the other set of measurement points to the edge of the target wafer. The sum of the third trimming distance and the fourth trimming distance may be a certain value.
As an example, a target wafer may be selected to be a wafer having a size of 12 inches and a radius of 150mm. Two sets of measurement points can be set in the first direction of the target wafer, and two sets of measurement points can be set in the second direction, wherein one set of measurement points includes 11 measurement points. At this time, the target wafer has 44 measurement points and 4 mutation points. According to the coordinates of the four abrupt points, the first trimming distance, the second trimming distance, the third trimming distance and the fourth trimming distance can be calculated, respectively.
Step S440 includes:
step S441, obtaining a wafer registration calibration value in a first direction according to the first trimming distance and the second trimming distance;
in step S442, a wafer registration calibration value in the second direction is obtained according to the third trimming distance and the fourth trimming distance.
In step S441, a wafer registration calibration value in the first direction is obtained according to the first trimming distance and the second trimming distance. As an example, when the first direction is parallel to the direction in which the target wafer is fed into the deposition chamber by the robot, the wafer registration calibration value obtained from the first and second trimming distances may be used to calibrate the extension parameters of the robot. Specifically, the wafer registration calibration value in the first direction may be calculated using the following formula: (EBR) 1 +EBR 2 )/2-EBR 2 Wherein EBR 1 For a first edging distance, EBR 2 Is the second trimming distance.
In step S442, a wafer registration calibration value in the second direction is obtained according to the third trimming distance and the fourth trimming distance. As an example, when the second direction is perpendicular to the direction in which the target wafer is fed into the deposition chamber by the robot, the wafer registration calibration value obtained from the third and fourth trimming distances may be used to calibrate the rotation parameters of the robot.
As an example, two sets of measurement points may be disposed opposite to each other in a first direction of the target wafer, and two sets of measurement points may be disposed opposite to each other in a second direction. The first direction is perpendicular to the second direction, the first direction is taken as a Y axis, the second direction is taken as an X axis, and the center of a circle of the target wafer is taken as an origin, so that a rectangular coordinate system is established.
And acquiring a first trimming distance according to the coordinates of the abrupt points in the measurement points in the positive direction of the Y axis and the coordinates of the measurement points of the edge of the target wafer in the positive direction of the Y axis. And obtaining a second edging distance according to the coordinates of the abrupt points in the measurement points in the negative Y-axis direction and the coordinates of the measurement points of the edge of the target wafer in the negative Y-axis direction. And obtaining a third edging distance according to the coordinates of the abrupt points in the measurement points in the X-axis negative direction and the coordinates of the measurement points of the edge of the target wafer in the X-axis negative direction. And obtaining a fourth edging distance according to the coordinates of the abrupt points in the measurement points in the X-axis positive direction and the coordinates of the measurement points of the edge of the target wafer in the X-axis positive direction.
For example, the radius of the target wafer is 150mm. When the coordinates of the abrupt point are (0, 148.4), and the coordinates of the measurement point of the edge are (0, 150), the first trimming distance is 1.6mm. When the coordinates of the abrupt point are (0, -144.7), and the coordinates of the measurement point of the edge are (0, -150), the second trimming distance is 5.3mm. When the coordinates of the abrupt point are (-147.2,0) and the coordinates of the measurement point of the edge are (-150,0), the third trimming distance is 2.8mm. When the coordinates of the abrupt point are (147.7,0) and the coordinates of the measurement point of the edge are (150,0), the fourth trimming distance is 2.3mm.
Wherein the second edging distance is greater than a preset value (4 mm), the mechanical arm of the deposition chamber needs to be calibrated, in particular according to the formula (EBR 1 +EBR 2 )/2-EBR 2 The calculated robot arm needs to be adjusted by 1.85mm in extension parameters, i.e., the robot arm needs to be moved by 1.85mm in the direction of feeding the wafer into the deposition chamber. The third trimming distance is close to the fourth trimming distance, and the rotation parameters of the mechanical arm do not need to be adjusted.
In one embodiment, there is provided a wafer registration calibration value acquisition apparatus including: the device comprises a first acquisition module, a determination module, a second acquisition module and a third acquisition module.
The first acquisition module is used for acquiring the film thickness of at least one group of measurement points on the target wafer, and the measurement points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
the determining module is used for determining mutation points in the same group of measurement points, and measuring points with mutation of the film thickness of the mutation points;
the second acquisition module is used for acquiring the edging distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the measurement point of the group of the mutation point;
and the third acquisition module is used for acquiring the wafer coincidence calibration value according to the trimming distance.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 1 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
In the description of the present specification, reference to the terms "some embodiments," "other embodiments," "desired embodiments," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims (10)

1. The wafer coincidence calibration value acquisition method is characterized by comprising the following steps:
obtaining the film thickness of at least one group of measuring points on a target wafer, wherein the measuring points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
determining mutation points in the same group of measurement points, wherein the mutation points are measurement points of film thickness mutation;
obtaining a trimming distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points;
and obtaining a wafer coincidence calibration value according to the trimming distance.
2. The method of claim 1, wherein the obtaining the film thickness of at least one set of metrology sites on the target wafer comprises:
the film thickness of two groups of measurement points oppositely arranged in the first direction is obtained.
3. The method of claim 2, wherein the obtaining a trimming distance from the center of the target wafer to the direction of the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points comprises:
acquiring a first trimming distance and a second trimming distance according to the mutation points in the two groups of measurement points oppositely arranged in the first direction;
according to the trimming distance, obtaining a wafer registration calibration value comprises the following steps:
and acquiring a wafer coincidence calibration value in the first direction according to the first trimming distance and the second trimming distance.
4. The method of claim 3, wherein the obtaining a wafer registration calibration value in a first direction based on the first trimming distance and the second trimming distance comprises:
calculating a wafer registration calibration value in a first direction according to the following formula:
(EBR 1 +EBR 2 )/2-EBR 2 wherein EBR 1 For a first edging distance, EBR 2 Is the second trimming distance.
5. The method of claim 2, wherein the obtaining the film thickness of at least one set of metrology sites on the target wafer further comprises:
and obtaining film thicknesses of two groups of measurement points oppositely arranged in a second direction, wherein the second direction intersects with the first direction.
6. The method of claim 5, wherein the second direction is perpendicular to the first direction.
7. The method according to claim 5 or 6, wherein the obtaining the edging distance from the center of the target wafer to the direction of the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points comprises:
acquiring a first trimming distance and a second trimming distance according to the mutation points in the two groups of measurement points oppositely arranged in the first direction;
acquiring a third trimming distance and a fourth trimming distance according to the abrupt change points in the two groups of measurement points oppositely arranged in the second direction;
according to the trimming distance, obtaining a wafer registration calibration value comprises the following steps:
acquiring a wafer coincidence calibration value in a first direction according to the first trimming distance and the second trimming distance;
and acquiring a wafer coincidence calibration value in the second direction according to the third trimming distance and the fourth trimming distance.
8. A method of calibration, comprising:
providing a target wafer;
placing the target wafer on a base in a deposition chamber through a mechanical arm, and depositing a film;
measuring the film thickness of at least one group of measuring points on the target wafer;
the wafer registration calibration value acquisition method according to any one of claims 1 to 7, wherein a wafer registration calibration value is acquired;
and calibrating parameters of the mechanical arm according to the wafer coincidence calibration value.
9. The method of calibrating according to claim 8, wherein calibrating the parameters of the robot arm according to the wafer registration calibration values comprises:
and calibrating the extension parameters of the mechanical arm according to the wafer coincidence calibration value.
10. The wafer registration calibration value acquisition device is characterized by comprising:
the first acquisition module is used for acquiring the film thickness of at least one group of measurement points on a target wafer, and the measurement points in the same group are distributed from the edge of the target wafer to the center of the target wafer;
the determining module is used for determining mutation points in the same group of measurement points, wherein the mutation points are measurement points with the mutation of film thickness;
the second acquisition module is used for acquiring a trimming distance in the direction from the center of the target wafer to the mutation point according to the distance between the mutation point and the edge of the target wafer corresponding to the group of measurement points;
and the third acquisition module is used for acquiring the wafer coincidence calibration value according to the trimming distance.
CN202311210475.9A 2023-09-19 2023-09-19 Wafer registration calibration value acquisition method, device and calibration method Pending CN117116833A (en)

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CN117116833A true CN117116833A (en) 2023-11-24

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