CN104858193B - 玻璃基板的紫外光清洗装置 - Google Patents

玻璃基板的紫外光清洗装置 Download PDF

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CN104858193B
CN104858193B CN201510323940.9A CN201510323940A CN104858193B CN 104858193 B CN104858193 B CN 104858193B CN 201510323940 A CN201510323940 A CN 201510323940A CN 104858193 B CN104858193 B CN 104858193B
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glass substrate
humidifier
lamp box
lamp
ultraviolet
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CN104858193A (zh
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姚江波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B15/00Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075Cleaning of glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02082Cleaning product to be cleaned
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate

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Abstract

本发明提供一种玻璃基板的紫外光清洗装置,包括:灯箱、置于灯箱内上方的紫外光灯、置于紫外光灯下方的透明防护罩、置于透明防护罩下方的加湿器、及置于透明防护罩下方与加湿器相对设置的强力排风装置;使用时,玻璃基板被传送至灯箱内,紫外光灯发出的紫外光透过防护罩照射于玻璃基板上,对玻璃基板进行清洗,并通过加湿器调节灯箱内部的湿度和氧含量,使玻璃基板表面吸附一层水分子,紫外光干式清洗时产生的电子可通过水分子逐渐传导泄露,可有效抑制静电的积累,减少静电击伤现象,同时氧含量的增加使灯箱内氧活性原子浓度也随之增加,从而提高了紫外光清洗有机物的效果。

Description

玻璃基板的紫外光清洗装置
技术领域
本发明涉显示屏制造领域,尤其涉及一种玻璃基板的紫外光清洗装置。
背景技术
在显示技术领域,液晶显示器(Liquid Crystal Display,LCD)与有机发光二极管显示器(Organic Light Emitting Diode,OLED)等平板显示器已经逐步取代CRT显示器,广泛的应用于液晶电视、手机、个人数字助理、数字相机、计算机屏幕或笔记本电脑屏幕等。
显示面板是LCD、OLED的重要组成部分。不论是LCD的显示面板,还是OLED的显示面板,通常都具有一薄膜晶体管(Thin Film Transistor,TFT)阵列基板。以LCD的显示面板为例,其主要是由一TFT阵列基板、一彩色滤光片基板(Color Filter,CF)、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成,其工作原理是通过在TFT阵列基板与CF基板上施加驱动电压来控制液晶层中液晶分子的旋转,将背光模组的光线折射出来产生画面。
目前,TFT器件制程过程中主要使用波长为172nm的紫外光(EUV)清洗机对玻璃基板表面进行清洗,可以获得很好的清洗效果,但随之也带来因静电释放(Electro-Staticdischarge,ESD)而导致TFT器件大面积的静电击伤的问题。特别是随着产品解析度越来越高,电极线宽越精细,其承受静电放电能力越小,越容易导致静电击伤.
如附图1是采用现有的紫外光清洗机,对完成栅电极制程后、进行绝缘层成膜前的TFT基板进行清洗后导致的静电击伤图片。
分析静电产生的原因,发现是紫外光灯发出高能光子激发金属电极电子逸出,电子在绝缘玻璃表面累积而无法缓慢的泄露出去,当累积量超出金属电极承受范围时就会造成TFT电路器件的静电击伤。
发明内容
本发明的目的在于提供一种玻璃基板的紫外光清洗装置,能够减少因紫外光清洗而导致的静电击伤,并能够增加紫外光箱内的活性氧含量,从而提高紫外光清洗效果。
为实现上述目的,本发明提供一种玻璃基板的紫外光清洗装置,包括:灯箱、置于灯箱内上方的紫外光灯、置于紫外光灯下方的透明防护罩、置于所述透明防护罩下方的加湿器、及置于所述透明防护罩下方与所述加湿器相对设置的强力排风装置;
使用时,玻璃基板被传送至所述灯箱内,所述紫外光灯发出的紫外光透过所述防护罩照射于玻璃基板上,对所述玻璃基板进行清洗,并通过所述加湿器调节所述灯箱内部的湿度和氧含量。
所述紫外光灯发出的紫外光波长为172nm。
所述防护罩上接近玻璃基板的一侧涂覆有一层透明的疏水涂层。
所述加湿器平行于所述玻璃基板的传送方向设于所述玻璃基板的上方。
所述加湿器的气流方向平行并贴近于玻璃基板的表面。
所述加湿器可以分别输出水蒸汽、氧气、氮气,以调整所述灯箱内部的湿度和氧含量。
所述的玻璃基板的紫外光清洗装置,还包括用于测量所述灯箱内部的空气湿度和氧含量的测试仪,所述测试仪设置于所述加湿器附近。
所述强力排风装置的排风量可调。
使用时,根据玻璃基板的耐静电能力对所述灯箱内的湿度和氧含量进行调整。
本发明的有益效果:本发明的玻璃基板的紫外光清洗装置,在紫外光清洗装置中加入加湿器和强力排风装置,使用时,可根据基板的耐静电能力,通过控制加湿器和强力排风装置自由调节紫外光灯箱内部的湿度和氧含量,使玻璃基板表面吸附一层水分子,紫外光干式清洗时产生的电子可通过水分子逐渐传导泄露,可有效抑制静电的积累,减少静电击伤现象,同时氧含量的增加使灯箱内氧活性原子浓度也随之增加,从而提高了紫外光清洗有机物的效果。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其他有益效果显而易见。
附图中,
图1为采用现有紫外光清洗机对TFT基板清洗后造成的静电击伤图片;
图2为本发明玻璃基板的紫外光清洗装置的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的实施例及其附图进行详细描述。
请参阅图2,本发明提供的一种玻璃基板的紫外光清洗装置,包括:灯箱1、置于灯箱1内上方的可发出波长172nm紫外光的准分子紫外光灯2、置于紫外光灯2下方的透明防护罩3、置于所述透明防护罩3下方的加湿器4、及置于所述透明防护3罩下方与所述加湿器4相对设置的用于保证灯箱1内部的气体循环、排风量可调的强力排风装置5;
使用时,玻璃基板6被传送至所述灯箱1内,所述紫外光灯2发出的紫外光透过所述防护罩3照射于玻璃基板6上,对所述玻璃基板6进行清洗,并通过所述加湿器4调节所述灯箱1内部的湿度和氧含量。
具体地,所述防护罩3用于防止清洗后的杂质气体附着到紫外光灯2上,影响其使用寿命及照射效果;所述防护罩3上接近玻璃基板6的一侧涂覆有一层透明的疏水涂层,用于防止所述防护罩3因湿度变化而导致的雾化。
具体地,所述加湿器4平行于所述玻璃基板6的传送方向设于所述玻璃基板6的上方,以保证其气体传送距离较短。所述加湿器4的气流方向平行并贴近于玻璃基板6的表面,以保证水分子能充分附着在玻璃基板6上且尽量少扩散到紫外光灯2的防护罩3上,以免形成水雾,影响紫外光清洗效果。
具体地,所述加湿器4可以分别输出水蒸汽、氧气、氮气,以调整紫外光灯箱1内的湿度和氧含量;其中,物体处在潮湿的空气环境中会将水分子吸附于物体表面,这些水分将导致介质物体表面电导率提高,使静电荷泄漏能力增强,有效地限制了静电荷积累的发生。另外,氧气在高能紫外光下会产生活性的氧原子基团,活性氧原子会和被紫外光打断分子链的有机物分子反应,活性氧原子的浓度越大,与有机物反应越彻底,可有效提高清洗效果,因此,通过调整紫外光灯箱1内的湿度,可以有效避免静电击伤的现象,使灯箱1内氧含量增加,即可使清洗装置的清洗效果提高。
具体地,在加湿器4附近还设置有测量所述灯箱1内部的空气湿度和氧含量的测试仪(未图示),可实时监测灯箱1内部的湿度和氧含量,并上传信息到紫外光清洗机的主控制器(未图示)上。
使用该紫外光清洗装置进行清洗时,根据玻璃基板6的耐静电能力,通过控制加湿器4及强力排风装置5来对灯箱1内的湿度和氧含量进行调整。
综上所述,本发明提供的玻璃基板的紫外光清洗装置,在紫外光清洗装置中加入加湿器和强力排风装置,使用时,可根据基板的耐静电能力,通过控制加湿器和强力排风装置自由调节紫外光灯箱内部的湿度和氧含量,使玻璃基板表面吸附一层水分子,紫外光干式清洗时产生的电子可通过水分子逐渐传导泄露,有效抑制静电的积累,减少静电击伤现象,同时氧含量的增加使灯箱内氧活性原子浓度也随之增加,从而提高了紫外光清洗有机物的效果。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (4)

1.一种玻璃基板的紫外光清洗装置,其特征在于,包括:灯箱(1)、置于灯箱(1)内上方的紫外光灯(2)、置于紫外光灯(2)下方的透明防护罩(3)、置于所述透明防护罩(3)下方的加湿器(4)、及置于所述透明防护罩(3)下方与所述加湿器(4)相对设置的强力排风装置(5);
使用时,玻璃基板(6)被传送至所述灯箱(1)内,所述紫外光灯(2)发出的紫外光透过所述防护罩(3)照射于玻璃基板(6)上,对所述玻璃基板(6)进行清洗,并通过所述加湿器(4)调节所述灯箱(1)内部的湿度和氧含量;
所述加湿器(4)与强力排风装置(5)平行于所述玻璃基板(6)的传送方向分别设于所述玻璃基板(6)两侧的上方;所述加湿器(4)的气流方向平行并贴近于玻璃基板(6)的表面;
所述防护罩(3)上接近玻璃基板(6)的一侧涂覆有一层透明的疏水涂层;
所述加湿器(4)可以分别输出水蒸汽、氧气、氮气,以调整所述灯箱(1)内部的湿度和氧含量;
还包括用于测量所述灯箱(1)内部的空气湿度和氧含量的测试仪,所述测试仪设置于所述加湿器(4)附近。
2.如权利要求1所述的玻璃基板的紫外光清洗装置,其特征在于,所述紫外光灯(2)发出的紫外光波长为172nm。
3.如权利要求1所述的玻璃基板的紫外光清洗装置,其特征在于,所述强力排风装置(5)的排风量可调。
4.如权利要求1所述的玻璃基板的紫外光清洗装置,其特征在于,使用时,根据玻璃基板(6)的耐静电能力对所述灯箱(1)内的湿度和氧含量进行调整。
CN201510323940.9A 2015-06-12 2015-06-12 玻璃基板的紫外光清洗装置 Active CN104858193B (zh)

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CN201510323940.9A CN104858193B (zh) 2015-06-12 2015-06-12 玻璃基板的紫外光清洗装置
US14/771,208 US9786699B2 (en) 2015-06-12 2015-07-01 UV cleaning device of glass substrate
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