CN104854510B - 微光刻投射曝光设备的光学系统 - Google Patents

微光刻投射曝光设备的光学系统 Download PDF

Info

Publication number
CN104854510B
CN104854510B CN201380065563.2A CN201380065563A CN104854510B CN 104854510 B CN104854510 B CN 104854510B CN 201380065563 A CN201380065563 A CN 201380065563A CN 104854510 B CN104854510 B CN 104854510B
Authority
CN
China
Prior art keywords
optical system
reflective surfaces
light
polarization
reflective surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380065563.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104854510A (zh
Inventor
M.莫尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN104854510A publication Critical patent/CN104854510A/zh
Application granted granted Critical
Publication of CN104854510B publication Critical patent/CN104854510B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G02B5/3091—Birefringent or phase retarding elements for use in the UV

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Microscoopes, Condenser (AREA)
CN201380065563.2A 2012-12-14 2013-12-03 微光刻投射曝光设备的光学系统 Active CN104854510B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261737153P 2012-12-14 2012-12-14
DE102012223233.8A DE102012223233A1 (de) 2012-12-14 2012-12-14 Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102012223233.8 2012-12-14
US61/737,153 2012-12-14
PCT/EP2013/075383 WO2014090635A1 (en) 2012-12-14 2013-12-03 Optical system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
CN104854510A CN104854510A (zh) 2015-08-19
CN104854510B true CN104854510B (zh) 2017-07-18

Family

ID=50821372

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380065563.2A Active CN104854510B (zh) 2012-12-14 2013-12-03 微光刻投射曝光设备的光学系统

Country Status (6)

Country Link
US (1) US9720327B2 (https=)
JP (1) JP6510979B2 (https=)
CN (1) CN104854510B (https=)
DE (1) DE102012223233A1 (https=)
TW (1) TWI592766B (https=)
WO (1) WO2014090635A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP7102218B2 (ja) * 2018-05-09 2022-07-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び方法
US10962885B2 (en) * 2018-09-28 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet (EUV) polarization splitter
DE102019200193B3 (de) * 2019-01-09 2020-02-06 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
CN115901786B (zh) * 2022-12-09 2026-03-31 彩虹显示器件股份有限公司 一种线扫描相机检测玻璃边缘的装置及方法
DE102025128050A1 (de) * 2025-07-16 2026-04-23 Carl Zeiss Smt Gmbh EUV-Polarisator

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137618A (en) * 1999-02-08 2000-10-24 J. A. Woollam Co. Inc. Compact, high extinction coefficient combination brewster angle and other than brewster angle polarizing system, and method of use
CN1307689A (zh) * 1998-05-14 2001-08-08 莫科斯泰克公司 用于产生一总体上为偏振光束的偏振装置
US20030081210A1 (en) * 2001-10-25 2003-05-01 Fumitaro Masaki Optical apparatus
CN1670565A (zh) * 2003-11-27 2005-09-21 夏普株式会社 偏振转换光学系统
JP2010256637A (ja) * 2009-04-24 2010-11-11 Amada Co Ltd レーザ加工用偏光変換器
CN101952779A (zh) * 2008-02-15 2011-01-19 卡尔蔡司Smt股份公司 微光刻投射曝光设备的光学系统和微光刻曝光方法
CN102549461A (zh) * 2009-09-30 2012-07-04 卡尔蔡司Smt有限责任公司 用于微光刻的照明光学单元

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108131A (en) * 1998-05-14 2000-08-22 Moxtek Polarizer apparatus for producing a generally polarized beam of light
US7154666B2 (en) 2001-01-26 2006-12-26 Carl Zeiss Smt Ag Narrow-band spectral filter and the use thereof
EP1872176A2 (en) * 2005-04-20 2008-01-02 Carl Zeiss SMT AG Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system
US7525642B2 (en) * 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
DE102008041801A1 (de) 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie
DE102011003928B4 (de) 2011-02-10 2012-10-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102012219936A1 (de) 2012-10-31 2014-04-30 Carl Zeiss Smt Gmbh EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage
DE102013200137A1 (de) 2013-01-08 2013-11-14 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage
DE102013202645A1 (de) 2013-02-19 2014-02-27 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013205957A1 (de) 2013-04-04 2014-04-30 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307689A (zh) * 1998-05-14 2001-08-08 莫科斯泰克公司 用于产生一总体上为偏振光束的偏振装置
US6137618A (en) * 1999-02-08 2000-10-24 J. A. Woollam Co. Inc. Compact, high extinction coefficient combination brewster angle and other than brewster angle polarizing system, and method of use
US20030081210A1 (en) * 2001-10-25 2003-05-01 Fumitaro Masaki Optical apparatus
CN1670565A (zh) * 2003-11-27 2005-09-21 夏普株式会社 偏振转换光学系统
CN101952779A (zh) * 2008-02-15 2011-01-19 卡尔蔡司Smt股份公司 微光刻投射曝光设备的光学系统和微光刻曝光方法
JP2010256637A (ja) * 2009-04-24 2010-11-11 Amada Co Ltd レーザ加工用偏光変換器
CN102549461A (zh) * 2009-09-30 2012-07-04 卡尔蔡司Smt有限责任公司 用于微光刻的照明光学单元

Also Published As

Publication number Publication date
DE102012223233A1 (de) 2014-06-18
JP6510979B2 (ja) 2019-05-08
US9720327B2 (en) 2017-08-01
TWI592766B (zh) 2017-07-21
TW201435515A (zh) 2014-09-16
JP2016503186A (ja) 2016-02-01
WO2014090635A1 (en) 2014-06-19
CN104854510A (zh) 2015-08-19
US20150253677A1 (en) 2015-09-10

Similar Documents

Publication Publication Date Title
JP6434473B2 (ja) マイクロリソグラフィ投影露光装置の照明系
TWI510868B (zh) An optical unit, an illumination optical device, an exposure device, and an element manufacturing method
JP5480232B2 (ja) 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子
JP6221159B2 (ja) コレクター
CN104854510B (zh) 微光刻投射曝光设备的光学系统
JP6137179B2 (ja) マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
TWI849010B (zh) 用於投影曝光設備的光學系統
US9817317B2 (en) Optical system of a microlithographic projection exposure apparatus
KR102257176B1 (ko) 투영 노광 장치용 사용된 출력 빔을 생성하기 위한 euv 광원
US9955563B2 (en) EUV light source for generating a usable output beam for a projection exposure apparatus
JP2016503186A5 (https=)
US20180314165A1 (en) Illumination system of a microlithographic projection exposure apparatus

Legal Events

Date Code Title Description
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant