CN104849543A - Radio frequency power detection circuit - Google Patents
Radio frequency power detection circuit Download PDFInfo
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- CN104849543A CN104849543A CN201410054571.3A CN201410054571A CN104849543A CN 104849543 A CN104849543 A CN 104849543A CN 201410054571 A CN201410054571 A CN 201410054571A CN 104849543 A CN104849543 A CN 104849543A
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Abstract
The invention discloses a radio frequency power detection circuit comprising a bias circuit, a rectifier circuit and a DC voltage amplification circuit; a RFIN radio frequency signal is inputted, and detection voltage VOUT is outputted; the bias circuit is used for determining a static work point of the rectifier circuit; the rectifier circuit is used for converting the radio frequency signal into a DC voltage signal; the DC voltage amplification circuit is used for amplifying the DC voltage signal, so an output detection voltage scope satisfies index requests. The DC voltage amplification circuit is added on a conventional power detector of a diode rectifier structure, so DC voltage following system requirement can be outputted even when signal input power is small, thus lowering detection circuit input power requirements, and reducing power loss of an amplifier.
Description
Technical field
The radio-frequency power that the present invention relates in wireless communication system detects, especially a kind of RF power sensing circuit.
Background technology
In wireless communication system, radio-frequency power amplifier is integrated with RF power sensing circuit usually, for accurately detecting the size of the output terminal power of radio-frequency power amplifier, enables system carry out accurate power level control.This RF power sensing circuit needs larger power detection scope, namely needs the power detection scope of wider radiofrequency signal and wider radio frequency signal frequency scope.
At present, radio-frequency power amplifier adopts heterojunction transistor (Hetero junction BipolarTransistor mostly, HBT) technique is made, and the radio-frequency power amplifier chip internal made in HBT technique adopts diode rectifier circuit as RF power sensing circuit to detect the size of output terminal power.As shown in Figure 1, Fig. 1 is the circuit diagram of existing RF power sensing circuit, and existing RF power sensing circuit comprises: the first electric capacity C1, the first diode D1, the first resistance R1 and the second electric capacity C2; Input radio frequency signal is RF
iN, output detections voltage V
oUT.
First electric capacity C1 have radiofrequency signal coupling and every straight effect; First diode D1 radio frequency signal carries out rectification, and its bias voltage is by V
bthere is provided, make it be in forward conduction state; First resistance R1 and the second electric capacity C2 does low-pass filtering to the radiofrequency signal after rectification, and is V
oUTdC reference voltage point is set.
One end of first electric capacity C1 enters signal with defeated radio frequency and is connected, and the other end is connected with the positive pole of the first diode D1; Bias voltage V
bbe connected to the positive pole of the first diode D1; First diode D1 negative pole is connected with first resistance R1 one end, the other end ground connection of the first resistance R1.Second electric capacity C2 one end is connected with first resistance R1 one end with the first diode D1 negative pole, other end ground connection.Output voltage node is positioned at the tie point of the first diode D1 negative pole and the first resistance R1 and the first electric capacity C1.
The output voltage range of RF power sensing circuit is its Key Performance Indicator.In existing RF power sensing circuit, input signal power is larger, and the change of output detections voltage is larger.The watt level of input signal fundamentally determines output detections voltage range.
As can be seen here, the output detections voltage of existing RF power sensing circuit is limited to input signal power.Only have when the variation range of input signal power is enough large, circuit could export the detection voltage change range meeting system requirements.Therefore, usual RF power sensing circuit needs the output terminal being placed in amplifier, to obtain sufficiently high power input.This scheme can form certain power loss to amplifier, detects the impact that voltage is also vulnerable to output impedance mismatch simultaneously.
Summary of the invention
(1) technical matters that will solve
For solving the problem, the present invention proposes a kind of RF power sensing circuit, making also can export satisfactory DC voltage when signal power input is less.
(2) technical scheme
For achieving the above object, the invention provides a kind of RF power sensing circuit, this RF power sensing circuit comprises biasing circuit 1, rectification circuit 2 and DC voltage amplifying circuit 3, and input radio frequency signal is RF
iN, output detections voltage V
oUT, wherein: biasing circuit 1, for determining the quiescent point of rectification circuit 2; Rectification circuit 2, for changing radiofrequency signal into d. c. voltage signal; DC voltage amplifying circuit 3, for carrying out amplification process to d. c. voltage signal, makes output detections voltage range meet index request.
In such scheme, described biasing circuit 1 is made up of the first resistance R1, the first transistor Q1, transistor seconds Q2, wherein: the first resistance R1 and the first transistor Q1, transistor seconds Q2 form series connection dividing potential drop relation, combination define output voltage, make the first diode D1 in rectification circuit 2 be in forward conduction state; One end of first resistance R1 connects power supply VCC, and the other end connects the base stage of the first transistor Q1, collector and rectification circuit 2; The first transistor Q1 emitter is connected to base stage and the collector of transistor seconds Q2, the grounded emitter of transistor seconds Q2.
In such scheme, described rectification circuit 2 is made up of the first electric capacity C1, the second electric capacity C2, the first diode D1, the second resistance R2, and wherein, the first electric capacity C1 has coupled RF signal and every straight effect; First diode D1 radio frequency signal carries out rectification; Second resistance R2 and the second electric capacity C2 does low-pass filtering to the radiofrequency signal after rectification, forms DC voltage, for DC voltage amplifying circuit provides quiescent bias point, makes third transistor Q3 be operated in amplification region.
In such scheme, one end and the defeated radio frequency of described first electric capacity C1 enter signal RF
iNbe connected, the other end is connected with biasing circuit with the positive pole of the first diode D1; First diode D1 negative pole is connected with second resistance R2 one end, the other end ground connection of the second resistance R2; Second electric capacity C2 one end ground connection, the other end is connected with DC voltage amplifying circuit with the first diode D1 negative pole.
In such scheme, described DC voltage amplifying circuit 3 is connected and composed by the 3rd resistance R3, the 4th resistance R4, third transistor Q3, the 4th transistor Q4, wherein: third transistor Q3 is exaggerated the output DC voltage of rectification circuit; 3rd resistance R3 and third transistor Q3 combination defines the quiescent point of the 4th transistor Q4; 4th transistor Q4 has done DC voltage amplification further; 4th resistance R4 and the 4th transistor Q4 combination defines the bias point exporting DC voltage.
In such scheme, the base stage of described third transistor Q3 is connected with the output of rectification circuit, grounded emitter, and collector is connected to power supply VCC by the 3rd resistance R3, and collector is also connected with the base stage of the 4th transistor Q4 simultaneously; 3rd resistance R3 is connected between the collector of third transistor Q3 and power supply VCC; The grounded emitter of the 4th transistor Q4, collector is connected to power supply VCC by the 4th resistance R4, and collector is connected to the output that DC voltage amplifies it simultaneously; Between the collector that 4th resistance R4 is connected on the 4th transistor Q4 and power supply VCC.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, this RF power sensing circuit of the present invention's proposition, the basis of diode rectification structure adds DC voltage amplifying circuit, makes also can export satisfactory DC voltage when signal power input is less.This method reduce the RF signal power that RF power sensing circuit obtains from radio-frequency power amplifier, more RF signal power is made to transfer to antenna, thus the power loss that reduction RF power sensing circuit brings, improve the efficiency of radio-frequency power amplifier amplifier.
2, this RF power sensing circuit of the present invention's proposition, the conventional power detectors basis of diode rectification structure adds DC voltage amplifying circuit, also can export when signal power input is less the DC voltage meeting system requirements.Therefore the signal power level that radio-frequency power amplifier intermediate gain level has also can meet the requirement of RF power sensing circuit.RF power sensing circuit can move to intermediate gain level from the final stage of RF power sensing circuit, thus eliminate radio-frequency power amplifier output impedance mismatch to the impact detecting voltage, it also avoid the impact of testing circuit radio frequency power amplifier output power.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Fig. 1 is the circuit diagram of existing RF power sensing circuit;
Fig. 2 is the circuit diagram of RF power sensing circuit provided by the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 2, this RF power sensing circuit comprises biasing circuit 1, rectification circuit 2 and DC voltage amplifying circuit 3 to RF power sensing circuit provided by the invention, and input radio frequency signal is RF
iN, output detections voltage V
oUT, wherein: biasing circuit 1, for determining the quiescent point of rectification circuit 2; Rectification circuit 2, for changing radiofrequency signal into d. c. voltage signal; DC voltage amplifying circuit 3, for carrying out amplification process to d. c. voltage signal, makes output detections voltage range meet index request.
Biasing circuit 1 is made up of the first resistance R1, the first transistor Q1, transistor seconds Q2.First resistance R1 and the first transistor Q1, transistor seconds Q2 form series connection dividing potential drop relation, combination define output voltage, make the first diode D1 in rectification circuit 2 be in forward conduction state.One end of first resistance R1 connects power supply VCC, and the other end connects the base stage of the first transistor Q1, collector and rectification circuit 2; The first transistor Q1 emitter is connected to base stage and the collector of transistor seconds Q2, the grounded emitter of transistor seconds Q2.
Rectification circuit 2 is made up of the first electric capacity C1, the second electric capacity C2, the first diode D1, the second resistance R2.First electric capacity C1 has coupled RF signal and every straight effect; First diode D1 radio frequency signal carries out rectification; Second resistance R2 and the second electric capacity C2 does low-pass filtering to the radiofrequency signal after rectification, forms DC voltage, for DC voltage amplifying circuit provides quiescent bias point, makes third transistor Q3 be operated in amplification region.
One end and the defeated radio frequency of the first electric capacity C1 enter signal RF
iNbe connected, the other end is connected with biasing circuit with the positive pole of the first diode D1; First diode D1 negative pole is connected with second resistance R2 one end, the other end ground connection of the second resistance R2; Second electric capacity C2 one end ground connection, the other end is connected with DC voltage amplifying circuit with the first diode D1 negative pole.
DC voltage amplifying circuit is connected and composed by the 3rd resistance R3, the 4th resistance R4, third transistor Q3, the 4th transistor Q4.Third transistor Q3 is exaggerated the output DC voltage of rectification circuit; 3rd resistance R3 and third transistor Q3 combination defines the quiescent point of the 4th transistor Q4; 4th transistor Q4 has done DC voltage amplification further; 4th resistance R4 and the 4th transistor Q4 combination defines the bias point exporting DC voltage.
The base stage of third transistor Q3 is connected with the output of rectification circuit, grounded emitter, and collector is connected to power supply VCC by the 3rd resistance R3, and collector is also connected with the base stage of the 4th transistor Q4 simultaneously.3rd resistance R3 is connected between the collector of third transistor Q3 and power supply VCC.The grounded emitter of the 4th transistor Q4, collector is connected to power supply VCC by the 4th resistance R4, and collector is connected to the output that DC voltage amplifies it simultaneously.Between the collector that 4th resistance R4 is connected on the 4th transistor Q4 and power supply VCC.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a RF power sensing circuit, is characterized in that, this RF power sensing circuit comprises biasing circuit (1), rectification circuit (2) and DC voltage amplifying circuit (3), and input radio frequency signal is RF
iN, output detections voltage V
oUT, wherein:
Biasing circuit (1), for determining the quiescent point of rectification circuit (2);
Rectification circuit (2), for changing radiofrequency signal into d. c. voltage signal;
DC voltage amplifying circuit (3), for carrying out amplification process to d. c. voltage signal, makes output detections voltage range meet index request.
2. RF power sensing circuit according to claim 1, is characterized in that, described biasing circuit (1) is made up of the first resistance (R1), the first transistor (Q1), transistor seconds (Q2), wherein:
First resistance (R1) and the first transistor (Q1), transistor seconds (Q2) form series connection dividing potential drop relation, combination define output voltage, make the first diode (D1) in rectification circuit (2) be in forward conduction state; One end of first resistance (R1) connects power supply (VCC), and the other end connects the base stage of the first transistor (Q1), collector and rectification circuit (2); The first transistor (Q1) emitter is connected to base stage and the collector of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2).
3. RF power sensing circuit according to claim 1, it is characterized in that, described rectification circuit (2) is made up of the first electric capacity (C1), the second electric capacity (C2), the first diode (D1), the second resistance (R2), wherein, the first electric capacity (C1) has coupled RF signal and every straight effect; First diode (D1) radio frequency signal carries out rectification; Second resistance (R2) and the second electric capacity (C2) do low-pass filtering to the radiofrequency signal after rectification, form DC voltage, for DC voltage amplifying circuit provides quiescent bias point, third transistor (Q3) is made to be operated in amplification region.
4. RF power sensing circuit according to claim 3, is characterized in that, one end and the defeated radio frequency of described first electric capacity (C1) enter signal (RF
iN) be connected, the other end is connected with biasing circuit with the positive pole of the first diode (D1); First diode (D1) negative pole is connected with the second resistance (R2) one end, the other end ground connection of the second resistance (R2); Second electric capacity (C2) one end ground connection, the other end is connected with DC voltage amplifying circuit with the first diode (D1) negative pole.
5. RF power sensing circuit according to claim 1, it is characterized in that, described DC voltage amplifying circuit (3) is connected and composed by the 3rd resistance (R3), the 4th resistance (R4), third transistor (Q3), the 4th transistor (Q4), wherein: third transistor (Q3) is exaggerated the output DC voltage of rectification circuit; 3rd resistance (R3) and third transistor (Q3) combination define the quiescent point of the 4th transistor (Q4); 4th transistor (Q4) has done DC voltage amplification further; 4th resistance (R4) and the 4th transistor (Q4) combination define the bias point exporting DC voltage.
6. RF power sensing circuit according to claim 5, it is characterized in that, the base stage of described third transistor (Q3) is connected with the output of rectification circuit, grounded emitter, collector is connected to power supply (VCC) by the 3rd resistance (R3), and collector is also connected with the base stage of the 4th transistor (Q4) simultaneously; 3rd resistance (R3) is connected between the collector of third transistor (Q3) and power supply (VCC); The grounded emitter of the 4th transistor (Q4), collector is connected to power supply (VCC) by the 4th resistance (R4), and collector is connected to the output that DC voltage amplifies it simultaneously; Between the collector that 4th resistance (R4) is connected on the 4th transistor (Q4) and power supply (VCC).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410054571.3A CN104849543A (en) | 2014-02-18 | 2014-02-18 | Radio frequency power detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410054571.3A CN104849543A (en) | 2014-02-18 | 2014-02-18 | Radio frequency power detection circuit |
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|---|---|
| CN104849543A true CN104849543A (en) | 2015-08-19 |
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ID=53849334
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|---|---|---|---|
| CN201410054571.3A Pending CN104849543A (en) | 2014-02-18 | 2014-02-18 | Radio frequency power detection circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105717354A (en) * | 2016-01-28 | 2016-06-29 | 宜确半导体（苏州）有限公司 | Power detection circuit and method |
| CN106877826A (en) * | 2015-12-10 | 2017-06-20 | 美国亚德诺半导体公司 | The power intensifier and method of the automatic biasing distributed amplifier of gate bias network |
| CN109425782A (en) * | 2017-09-04 | 2019-03-05 | 北京泰龙电子技术有限公司 | A kind of radio-frequency power supply power amplifier detection device |
| CN109799386A (en) * | 2017-11-17 | 2019-05-24 | 华为技术有限公司 | A kind of power detector |
| CN112904079A (en) * | 2021-01-22 | 2021-06-04 | 新郦璞科技(上海)有限公司 | Bidirectional radio frequency power detector, working method and system |
| CN112925370A (en) * | 2021-01-22 | 2021-06-08 | 新郦璞科技(上海)有限公司 | Novel robust RMS power detector and working method |
| WO2023097941A1 (en) * | 2021-12-03 | 2023-06-08 | 深圳飞骧科技股份有限公司 | Power measurement circuit, power amplifier module, and radio-frequency front-end architecture |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106877826A (en) * | 2015-12-10 | 2017-06-20 | 美国亚德诺半导体公司 | The power intensifier and method of the automatic biasing distributed amplifier of gate bias network |
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| CN109425782A (en) * | 2017-09-04 | 2019-03-05 | 北京泰龙电子技术有限公司 | A kind of radio-frequency power supply power amplifier detection device |
| CN109799386A (en) * | 2017-11-17 | 2019-05-24 | 华为技术有限公司 | A kind of power detector |
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| CN112904079A (en) * | 2021-01-22 | 2021-06-04 | 新郦璞科技(上海)有限公司 | Bidirectional radio frequency power detector, working method and system |
| CN112925370A (en) * | 2021-01-22 | 2021-06-08 | 新郦璞科技(上海)有限公司 | Novel robust RMS power detector and working method |
| CN112904079B (en) * | 2021-01-22 | 2024-04-16 | 新郦璞科技(上海)有限公司 | Bidirectional radio frequency power detector, working method and system |
| WO2023097941A1 (en) * | 2021-12-03 | 2023-06-08 | 深圳飞骧科技股份有限公司 | Power measurement circuit, power amplifier module, and radio-frequency front-end architecture |
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Application publication date: 20150819 |