CN103391048A - Self-adaptive linear biasing circuit structure - Google Patents
Self-adaptive linear biasing circuit structure Download PDFInfo
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- CN103391048A CN103391048A CN2012101470950A CN201210147095A CN103391048A CN 103391048 A CN103391048 A CN 103391048A CN 2012101470950 A CN2012101470950 A CN 2012101470950A CN 201210147095 A CN201210147095 A CN 201210147095A CN 103391048 A CN103391048 A CN 103391048A
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Abstract
The invention provides a self-adaptive linear biasing circuit structure, belongs to the technical field of communication, and in particular relates to a self-adaptive linear biasing circuit. The invention provides the self-adaptive linear biasing circuit, which has the advantages that the adaptability on power change of input signals is strong, the linearity is good, and the efficiency is high. The self-adaptive linear biasing circuit comprises a linear biasing circuit, and is structurally characterized in that the linear biasing circuit is connected with a radio-frequency amplifier unit circuit through a self-adaptive circuit, the port of the self-adaptive circuit is connected with the input signals, and the self-adaptive circuit is used for adjusting the bias voltage of a power amplifier unit according to the power change of the input signals.
Description
Technical field
The invention belongs to communication technical field, relate in particular to a kind of adaptive linear biasing circuit.
Background technology
From 2.5G, in the design of mobile phone with regard to the linearity that faces power amplifier and the problem of efficiency, the existence of amplitude modulation(PAM), make the state that can not always be in the maximum linear power stage of power amplifier, must be in the back-off state, namely power amplifier can not be operated in the high efficiency state.While is along with the development of the 4th Generation Mobile Communication System IMT-Advanced, the transfer of data of two-forty makes modulation scheme become more complicated, thereby the radiofrequency signal after causing modulating has high peak-to-average power ratio, signal for the higher height power ratio of distortionless transmission, power amplifier is except meeting the launch requirements under average power output, also must guarantee the linearity output of PAPR dB on this power stage basis, like this, the guarantee peak signal is transmitted undistortedly.Simultaneously, power amplifier is as a power device, increase along with power output, its non-linear meeting significantly increases, and when the modulation signal with certain bandwidth,, by after power amplifier, can produce intermodulation component, cause spread spectrum, the neighboring trace signal formation is disturbed, directly have influence on the error rate of receiving system, worsen the performance of communication system.Therefore develop linear high efficiency high-performance power amplifier most important for modern wireless communication systems.
The design of biasing circuit is most important for the lifting of the linearity of power amplifier and efficiency.The most basic biasing circuit is to adopt simple resistor voltage divider circuit, as shown in Figure 2, but the increase along with input signal power, the rectifying effect of base stage-emitter diode can make bias voltage sharply descend with the increase of input power, as shown in Figure 4, thus make the linearity of power amplifier and efficiency sharply worsen.In traditional linear biasing circuit, as shown in Figure 3, by the effect of capacitor C b and pipe HBT2, can clamp down on bias voltage, make bias voltage to keep a more stable magnitude of voltage along with the increase of input power, as shown in Figure 4.Angle from the bias state of power amplifier, as shown in Figure 5, when power amplifier only is in AB class bias state, just can obtain the optimal state of a linearity and efficiency, yet for traditional linear biasing circuit, under the biasing of fixing bias voltage, the increase of input signal power will make the bias state of power amplifier slowly by the AB class, slide to the C class, finally causes the deterioration of the linearity and efficiency.
Summary of the invention
The present invention is exactly for the problems referred to above, provides a kind of and changes strong adaptability, the adaptive linear biasing circuit that the linearity is good, efficiency is high for input signal power.
For achieving the above object, the present invention adopts following technical scheme, the present invention includes linear biasing circuit, and its structural feature linear biasing circuit is connected with the radio frequency amplifier element circuit by adaptive circuit, and the adaptive electro road port is connected with input signal; Described adaptive circuit is according to the bias voltage of the variation Modulating Power amplifier unit of input signal power.
As a kind of preferred version, adaptive circuit of the present invention adopts resistance-capacitance circuit, and resistance-capacitance circuit is with input signal shunting, phase shift, stack.
As another kind of preferred version, resistance-capacitance circuit of the present invention comprises the first microstrip line, the first microstrip line one end is connected with self-adapted capacitance with input signal respectively, the first microstrip line other end is connected with coupling capacitance one end, the coupling capacitance other end is connected with radio frequency amplifier element circuit port with the second microstrip line one end respectively, and the second microstrip line other end is connected with the linear biasing circuit port with self-adapted capacitance respectively.
As another kind of preferred version, linear biasing circuit of the present invention comprises the first triode, and the first transistor emitter is connected with base stage with the second transistor collector respectively, and the second transistor emitter is connected with the bias supply negative pole; The first transistor base is connected with the 3rd transistor base with the first electric capacity one end respectively, and the first electric capacity other end is connected with the bias supply negative pole, and the 3rd transistor collector is connected with resistance one end, and the resistance other end is connected with the first transistor collector; The 3rd transistor emitter is connected with described resistance-capacitance circuit port.
As another kind of preferred version, radio frequency amplifier element circuit of the present invention comprises the 4th triode, the 4th transistor base is connected with described adaptive electro road port, the 4th transistor collector is connected with the second electric capacity one end with inductance one end respectively, the inductance other end is connected with power supply, the electric capacity other end is connected with rear class as output, and the 4th transistor emitter is connected with power cathode.
Beneficial effect of the present invention
The present invention has added adaptive circuit on the basis of traditional linear biasing circuit, adaptive circuit can make the bias current of radio-frequency power amplifier unit suitably increase along with the rising of input power, finally make Power Amplifier Unit be in a relatively stable angle of flow state along with the increase of input power, thereby reach the optimal state of a linearity and efficiency.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is basic electric resistance partial pressure biasing circuit;
Fig. 3 is common linear biasing circuit;
Fig. 4 adopts basic electric resistance partial pressure biasing circuit and the change curve of the base bias voltage that adopts common linear biasing circuit with input power;
Fig. 5 is the harmonic wave state of amplifier output and the relation of the angle of flow;
Fig. 6 is the change curve of the base bias voltage of the present invention and common linear biasing circuit with input power;
Fig. 7 is the change curve of the collector bias current of the present invention and common linear biasing circuit with input power;
Fig. 8 is the change curve of the power gain of the present invention and common linear biasing circuit with input power;
Fig. 9 is the present invention and the change curve of the power added efficiency that adopts common linear biasing circuit with input power;
Figure 10 is the variation of base bias voltage with capacitor C 2 sizes;
Figure 11 is the variation of power gain with capacitor C 2 sizes;
Figure 12 is the variation of power added efficiency with capacitor C 2 sizes.
Embodiment
As shown in Figure 1, the present invention includes linear biasing circuit 101, linear biasing circuit 101 is connected with radio frequency amplifier element circuit 102 by adaptive circuit 103, and adaptive circuit 103 ports are connected with input signal; Described adaptive circuit 103 is according to the bias voltage of the variation Modulating Power amplifier unit of input signal power.
Described adaptive circuit 103 adopts resistance-capacitance circuit, and resistance-capacitance circuit is with input signal shunting, phase shift, stack.
Described resistance-capacitance circuit comprises the first microstrip line MLin1, the first microstrip line MLin1 one end is connected with self-adapted capacitance C2 with input signal respectively, the first microstrip line MLin1 other end is connected with coupling capacitance C1 one end, the coupling capacitance C1 other end is connected with radio frequency amplifier element circuit 102 ports with the second microstrip line MLin2 one end respectively, and the second microstrip line MLin2 other end is connected with linear biasing circuit 101 ports with self-adapted capacitance C2 respectively.
Described linear biasing circuit 101 comprises the first triode Q1, and the first triode Q1 emitter is connected with base stage with the second triode Q2 collector electrode respectively, and the second triode Q2 emitter is connected with the bias supply negative pole; The first triode Q1 base stage is connected with the 3rd transistor base with the first capacitor C b one end respectively, the first capacitor C b other end is connected with the bias supply negative pole, the 3rd triode HBT2 collector electrode is connected with resistance 2 one ends, and resistance 2 other ends are connected with the first triode Q1 collector electrode; The 3rd triode HBT2 emitter is connected with described resistance-capacitance circuit port.
Described radio frequency amplifier element circuit 102 comprises the 4th triode HBT1, the 4th triode HBT1 base stage is connected with described adaptive circuit 103 ports, the 4th triode HBT1 collector electrode is connected with the second electric capacity one end with inductance one end respectively, the inductance other end is connected with power supply, the electric capacity other end is connected with rear class as output, and the 4th triode HBT1 emitter is connected with power cathode.
A coupling capacitance C1 and two sections microstrip lines have been added on the basis of the present invention by traditional linear biasing circuit 101, adaptive circuit 103 coordinates with linear biasing circuit 101, the bias current of radio-frequency power amplifier unit 102 is suitably increased along with the rising of input power, finally make radio-frequency power amplifier unit 102 be in a relatively stable angle of flow state along with the increase of input power, thereby reach the optimal state of a linearity and efficiency.
Need to prove, in the situation that do not conflict, embodiment and the feature in embodiment in the application can make up mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
The present invention is mainly used in front end transmitter in wireless communication system, and the Assisted RF Plasma CVD power amplifier amplifies the signal after up-conversion undistortedly, sends antenna transmission to and goes out.
As shown in Figure 1, microstrip line MLin1 of the present invention and MLin2 can produce certain phase delay to the signal of process, like this, the sub-fraction input signal is coupled to the emitter of pipe HBT2 by self-adapted capacitance C2, here signal is superimposed afterwards with the phase delay of having passed through microstrip line MLin1, coupling capacitance C1 and MLin2, increase the rectified current of pipe HBT2, thereby increase the bias voltage of Power Amplifier Unit 102.Like this, increase along with input signal power, the signal power that is coupled to pipe HBT2 from self-adapted capacitance C2 also can be along with increase, thereby make the bias voltage of Power Amplifier Unit 102 also with the increase of meeting along with input signal, increase, like this, just can be so that Power Amplifier Unit 101 keeps a relatively constant angle of flow along with the increase of input power.Can find out from harmonic wave and the angle of flow state relation of the output of Fig. 5 intermediate power amplifier, when the angle of flow was in dark AB class state, the linearity of power amplifier and efficiency will be in an optimized state.Therefore, regulate self-adapted capacitance C
AdaptiveCan, so that the angle of flow of power amplifier is in an optimized bias state, finally can make power amplifier obtain the linearity and the efficient state of an optimization.
Now compare in detail the linear biasing circuit 101 commonly used in the present invention and Fig. 3.Compare with common linear bias circuit 101, when input power increases, the bias voltage of Power Amplifier Unit of the present invention can increase along with the increase of input power, thereby makes power amplifier be in a more stable angle of flow state, as shown in Figure 5.The direct current of collector electrode fails to be convened for lack of a quorum and increases dynamically along with the increase of power simultaneously, as shown in Figure 7.Gain compression can not occur so that power amplifier can be kept a more stable power gain when the input signal wide variation in stable angle of flow state in advance, provides the good linearity, as shown in Figure 8.Compare with traditional linear biasing circuit 101, adopt the present invention, because metastable power gain can under the Same Efficieney initial conditions, obtain relatively high power added efficiency, as shown in Figure 9.
Self-adapted capacitance C2 major decision the size of signal power of coupling, can the residing angle of flow state of regulating power amplifier.The selection of self-adapted capacitance C2 can be passed through the scanning of the size of capacitance, by relatively power gain, the power added efficiency of power amplifier are determined.As shown in Figure 10,11,12.
Obviously, it is apparent to those skilled in the art that above-mentioned each unit of the present invention, structure or part can realize with being integral ground element or member, also can be realized by single element or member respectively.The present invention is not restricted this.The progression of amplifier can be decided according to the actual requirements, and also can select multistage linear compensation structure, be not limited at this above-mentioned, as long as can complete purpose of the present invention.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. adaptive linear biasing circuit structure, comprise linear biasing circuit (101), it is characterized in that linear biasing circuit (101) is connected with radio frequency amplifier element circuit (102) by adaptive circuit (103), adaptive circuit (103) port is connected with input signal; Described adaptive circuit (103) is according to the bias voltage of the variation Modulating Power amplifier unit of input signal power.
2. a kind of adaptive linear biasing circuit structure according to claim 1, is characterized in that described adaptive circuit (103) adopts resistance-capacitance circuit, and resistance-capacitance circuit is with input signal shunting, phase shift, stack.
3. a kind of adaptive linear biasing circuit structure according to claim 1, it is characterized in that described resistance-capacitance circuit comprises the first microstrip line (MLin1), the first microstrip line (MLin1) end is connected with self-adapted capacitance (C2) with input signal respectively, the first microstrip line (MLin1) other end is connected with coupling capacitance (C1) end, coupling capacitance (C1) other end is connected with radio frequency amplifier element circuit (102) port with the second microstrip line (MLin2) end respectively, the second microstrip line (MLin2) other end is connected with linear biasing circuit (101) port with self-adapted capacitance (C2) respectively.
4. a kind of adaptive linear biasing circuit structure according to claim 1, it is characterized in that described linear biasing circuit (101) comprises the first triode (Q1), the first triode (Q1) emitter is connected with base stage with the second triode (Q2) collector electrode respectively, and the second triode (Q2) emitter is connected with the bias supply negative pole; The first triode (Q1) base stage is connected with the 3rd transistor base with the first electric capacity (Cb) end respectively, the first electric capacity (Cb) other end is connected with the bias supply negative pole, the 3rd triode (HBT2) collector electrode is connected with resistance (2) one ends, and resistance (2) other end is connected with the first triode (Q1) collector electrode; The 3rd triode (HBT2) emitter is connected with described resistance-capacitance circuit port.
5. a kind of adaptive linear biasing circuit structure according to claim 1, it is characterized in that described radio frequency amplifier element circuit (102) comprises the 4th triode HBT1, the 4th triode (HBT1) base stage is connected with described adaptive circuit (103) port, the 4th triode (HBT1) collector electrode is connected with the second electric capacity one end with inductance one end respectively, the inductance other end is connected with power supply, the electric capacity other end is connected with rear class as output, and the 4th triode (HBT1) emitter is connected with power cathode.
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| CN2012101470950A CN103391048A (en) | 2012-05-11 | 2012-05-11 | Self-adaptive linear biasing circuit structure |
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| CN2012101470950A CN103391048A (en) | 2012-05-11 | 2012-05-11 | Self-adaptive linear biasing circuit structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104639069A (en) * | 2015-02-13 | 2015-05-20 | 何山暐 | Radio-frequency amplifying circuit and power limit module thereof |
| CN104849543A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Radio frequency power detection circuit |
| CN110166008A (en) * | 2019-05-22 | 2019-08-23 | 澋芯微电子(重庆)有限公司 | A kind of adaptive bipolar amplifier with linear bias circuit |
| CN115882795A (en) * | 2023-02-03 | 2023-03-31 | 成都明夷电子科技有限公司 | Power amplifier with linearization compensation structure |
-
2012
- 2012-05-11 CN CN2012101470950A patent/CN103391048A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849543A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Radio frequency power detection circuit |
| CN104639069A (en) * | 2015-02-13 | 2015-05-20 | 何山暐 | Radio-frequency amplifying circuit and power limit module thereof |
| CN104639069B (en) * | 2015-02-13 | 2017-08-11 | 康希通信科技（上海）有限公司 | A kind of radio frequency amplifying circuit and its power limitation module |
| CN110166008A (en) * | 2019-05-22 | 2019-08-23 | 澋芯微电子(重庆)有限公司 | A kind of adaptive bipolar amplifier with linear bias circuit |
| CN115882795A (en) * | 2023-02-03 | 2023-03-31 | 成都明夷电子科技有限公司 | Power amplifier with linearization compensation structure |
| CN115882795B (en) * | 2023-02-03 | 2023-04-28 | 成都明夷电子科技有限公司 | Power amplifier with linearization compensation structure |
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Application publication date: 20131113 |