CN105717354A - Power detection circuit and method - Google Patents
Power detection circuit and method Download PDFInfo
- Publication number
- CN105717354A CN105717354A CN201610060218.5A CN201610060218A CN105717354A CN 105717354 A CN105717354 A CN 105717354A CN 201610060218 A CN201610060218 A CN 201610060218A CN 105717354 A CN105717354 A CN 105717354A
- Authority
- CN
- China
- Prior art keywords
- transistor
- testing circuit
- resistance
- radio
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/14—Compensating for temperature change
Abstract
The invention discloses a power detection circuit and method. The detection circuit comprises a bias unit and a following amplification unit; when reference voltage is input at the reference voltage input end of the detection circuit, the bias unit biases a first transistor in an amplification state; and an RF signal input at the RF signal input end of the detection circuit is amplified by the first transistor and sent to a filter module, the filter module filters the amplified RF signal to obtain an output voltage signal, the output voltage signal is output via the signal output end of the detection circuit, and thus, output power of an RF power amplifier is detected. Compared with an RF power detection circuit in the prior art, the detection circuit of the invention has a wider power detection range.
Description
Technical field
The present invention relates to technical field of circuit design, more particularly, it relates to a kind of power-sensing circuit and detection method.
Background technology
Development along with communication technology, wireless communication technology is also more and more ripe, radio-frequency power amplifier is Primary Component indispensable in various wireless communication system, the brewed radiofrequency signal that it is mainly used in transceiver exports carries out power amplification, to be met the radiofrequency signal of wireless communication needs.In actual application, it usually needs the radiofrequency signal of radio-frequency power amplifier output is carried out power detection, thus the accurately control for wireless communication system provides foundation.The RF power sensing circuit generally adopted in prior art is as shown in Figure 1, the radiofrequency signal of described radio-frequency power amplifier output is inputted by the signal input part RFIN of described testing circuit, output voltage values is obtained after the rectification of diode D and the filtering of RC filter circuit that is made up of resistance R and electric capacity C, being exported by the signal output part VOUT of described testing circuit, the size of described output voltage values can characterize the height of described radio-frequency power amplifier output.
But owing to the characteristic of described diode D self determines, only described diode D just can be made to turn on when the performance number of the radiofrequency signal of radio-frequency power amplifier output is more than certain value.The conducting voltage assuming described diode D is 0.7V, so only described diode D just can be made to turn on when the power of the radiofrequency signal of radio-frequency power amplifier output is be more than or equal to 6.9dBm, when the power of the radiofrequency signal that is exported when described radio-frequency power amplifier is less, described testing circuit cannot detect the power of the radiofrequency signal of described radio-frequency power amplifier output, therefore the power detection scope of described testing circuit is less, it is difficult to the accurately control for wireless communication system provides accurate foundation.
Therefore, the RF power sensing circuit that a kind of power detection scope is bigger is needed badly.
Summary of the invention
For solving above-mentioned technical problem, the invention provides a kind of power-sensing circuit, the power detection scope of described power-sensing circuit is bigger.
For realizing above-mentioned technical purpose, embodiments provide following technical scheme:
A kind of power-sensing circuit, for the detection of radio-frequency power amplifier output, described testing circuit includes: bias unit and follow amplifying unit；Wherein,
Described bias unit includes the first resistance, and one end of described first resistance is as the reference voltage input terminal of described testing circuit, and the other end is connected with described amplifying unit of following；
Described amplifying unit of following includes the first electric capacity, the first transistor and filtration module, and one end of described first electric capacity is as the radio-frequency (RF) signal input end of described testing circuit, and the other end electrically connects with the base stage of described first resistance and described the first transistor simultaneously；The colelctor electrode of described the first transistor is as the power input of described testing circuit, its emitter stage electrically connects with one end of described filtration module, and as the signal output part of described testing circuit, the other end of described filtration module is as the earth terminal of described testing circuit；
Described bias unit is for being biased in magnifying state by described the first transistor, described the first transistor sends described filtration module to after the radiofrequency signal that described radio-frequency power amplifier inputs is amplified, described filtration module obtains output voltage signal after the radiofrequency signal after amplifying is filtered, and described output voltage signal is exported by the signal output part of described testing circuit.
Preferably, described in follow amplifying unit and also include the second resistance, described second resistance is connected between described first electric capacity and described testing circuit radio-frequency (RF) signal input end, for making the impedance matching between described testing circuit and described radio-frequency power amplifier.
Preferably, described bias unit also includes transistor seconds, and the first pole of described transistor seconds is connected to described first resistance one end, and its second pole is connected to the connection node of described first electric capacity and the first transistor.
Preferably, described bias unit also includes temperature compensation module, one end of described temperature compensation module is connected to the connection node of described first resistance and described transistor seconds, and the other end electrically connects with the earth terminal of described testing circuit, for providing temperature-compensating for described testing circuit.
Preferably, described temperature compensation module includes: third transistor, the 4th transistor and the 3rd resistance；Wherein,
First pole of described third transistor is connected to the first pole of described transistor seconds and the connection node of the first resistance, and its second pole electrically connects with the first pole of described 4th transistor simultaneously；Second pole of described 4th transistor electrically connects with one end of described 3rd resistance, and the other end of described 3rd resistance is as the earth terminal of described testing circuit；
Described temperature compensation module is for providing temperature-compensating for described testing circuit.
Preferably, described the first transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT；
Described transistor seconds is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described third transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described 4th transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
If described transistor seconds, third transistor, the 4th transistor are metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT, its first extremely base stage and colelctor electrode, the second extremely emitter stage；If described transistor seconds, third transistor, the 4th transistor are Base-Emitter junction diode, then its first extremely positive pole, the second extremely negative pole.
Preferably, described bias unit also includes the second electric capacity, one end of described second electric capacity is connected to the connection node of described first resistance, transistor seconds and third transistor, and the other end is connected to the earth terminal of described testing circuit, for stablizing the quiescent point of described bias unit.
Preferably, described testing circuit also includes partial pressure unit, and described partial pressure unit includes the 4th resistance and the 5th resistance；Wherein,
One end of described 4th resistance is connected to the emitter stage of described the first transistor and the connection node of described filtration module, and the other end is connected to the signal output part of described testing circuit；
One end of described 5th resistance is connected to the connection node of described 4th resistance and described testing circuit signal output part, and the other end is connected to the earth terminal of described testing circuit；
Described partial pressure unit is for regulating the amplitude of described output voltage signal.
Preferably, described filtration module includes the 3rd electric capacity and the 6th resistance, described 3rd electric capacity and the 6th resistor coupled in parallel, and one end electrically connects with the emitter stage of described the first transistor, and the other end electrically connects with the earth terminal of described testing circuit.
A kind of power detecting method, it is applied to the testing circuit described in above-described embodiment, for detecting the output of radio-frequency power amplifier, described radio-frequency power amplifier includes signal input part, signal output part, reference signal input, power input, first order amplifying unit, second level amplifying unit and third level amplifying unit, and described detection method includes:
The reference voltage input terminal of described testing circuit is electrically connected with the reference signal input of described radio-frequency power amplifier, the power input of the power input of described testing circuit with described radio-frequency power amplifier is electrically connected, the outfan of the radio-frequency (RF) signal input end of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit is electrically connected；
Starting described testing circuit and radio-frequency power amplifier, obtain output voltage signal by the signal output part of described testing circuit, described output voltage signal characterizes the output of described radio-frequency power amplifier.
Preferably, the outfan that the outfan of the radio-frequency (RF) signal input end of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit electrically connects as the radio-frequency (RF) signal input end of described testing circuit with described second level amplifying unit is electrically connected.
From technique scheme it can be seen that embodiments provide a kind of power-sensing circuit and detection method；Wherein, described testing circuit includes bias unit and follows amplifying unit, and when the reference voltage input terminal input reference voltage of described testing circuit, described the first transistor is biased in magnifying state by described bias unit；The radiofrequency signal inputted by the radio-frequency (RF) signal input end of described testing circuit sends described filtration module to after the amplification of described the first transistor, described filtration module obtains output voltage signal after the radiofrequency signal after amplifying is filtered, described output voltage signal is exported by the signal output part of described testing circuit, it is achieved the detection to described radio-frequency power amplifier output.Owing to described the first transistor is biased in magnifying state by described bias unit, the radiofrequency signal of described radio-frequency power amplifier input needs not participate in the setting of described the first transistor quiescent point, say, that the radiofrequency signal of any amplitude of input can be amplified and obtain described output voltage signal after the filtering of described filtration module by described the first transistor.Therefore described testing circuit has wider power detection scope compared with RF power sensing circuit of the prior art.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
Fig. 1 is the circuit diagram of power-sensing circuit of the prior art；
The electrical block diagram of a kind of power-sensing circuit that Fig. 2 provides for one embodiment of the present of invention；
The electrical block diagram of a kind of power-sensing circuit that Fig. 3 provides for an alternative embodiment of the invention；
The electrical block diagram of a kind of power-sensing circuit that another embodiment that Fig. 4 is the present invention provides；
The electrical block diagram of a kind of power-sensing circuit that Fig. 5 provides for yet another embodiment of the present invention；
The electrical block diagram of a kind of power-sensing circuit that Fig. 6 provides for a preferred embodiment of the present invention；
The Experimental comparison figure of relation between the output voltage at different ambient temperatures of the power-sensing circuit with temperature compensation module and the power of the radiofrequency signal of input that Fig. 7 provides for one embodiment of the present of invention；
The electrical block diagram of a kind of power-sensing circuit that another preferred embodiment that Fig. 8 is the present invention provides；
The electrical block diagram of a kind of power-sensing circuit that another preferred embodiment that Fig. 9 is the present invention provides；
The electrical block diagram of a kind of power-sensing circuit that another preferred embodiment that Figure 10 is the present invention provides；
The schematic flow sheet of a kind of power detecting method that Figure 11 provides for one embodiment of the present of invention.
Detailed description of the invention
As described in background, the power detection scope of RF power sensing circuit of the prior art is less, it is difficult to the accurately control for wireless communication system provides accurate foundation.
In view of this, embodiments providing a kind of power-sensing circuit, for the detection of radio-frequency power amplifier output, described testing circuit includes: bias unit and follow amplifying unit；Wherein,
Described bias unit includes the first resistance, and one end of described first resistance is as the reference voltage input terminal of described testing circuit, and the other end is connected with described amplifying unit of following；
Described amplifying unit of following includes the first electric capacity, the first transistor and filtration module, and one end of described first electric capacity is as the radio-frequency (RF) signal input end with described testing circuit, and the other end electrically connects with the base stage of described first resistance and described the first transistor simultaneously；The colelctor electrode of described the first transistor is as the power input of described testing circuit, its emitter stage electrically connects with one end of described filtration module, and as the signal output part of described testing circuit, the other end of described filtration module is as the earth terminal of described testing circuit；
Described bias unit is for being biased in magnifying state by described the first transistor, described the first transistor sends described filtration module to after radiofrequency signal described in input is amplified, described filtration module obtains output voltage signal after the radiofrequency signal after amplifying is filtered, and described output voltage signal is exported by the signal output part of described testing circuit.
Accordingly, the embodiment of the present invention additionally provides a kind of power detecting method, it is applied to the testing circuit described in above-described embodiment, for detecting the output of radio-frequency power amplifier, described radio-frequency power amplifier includes signal input part, signal output part, reference signal input, power input, first order amplifying unit, second level amplifying unit and third level amplifying unit, and described detection method includes:
The reference voltage input terminal of described testing circuit is electrically connected with the reference signal input of described radio-frequency power amplifier, the power input of the power input of described testing circuit with described radio-frequency power amplifier is electrically connected, the outfan of the radio-frequency (RF) signal input end of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit is electrically connected；
Starting described testing circuit and radio-frequency power amplifier, obtain output voltage signal by the signal output part of described testing circuit, described output voltage signal characterizes the output of described radio-frequency power amplifier.
From technique scheme it can be seen that embodiments provide a kind of power-sensing circuit and detection method；Wherein, described testing circuit includes bias unit and follows amplifying unit, and when the reference voltage input terminal input reference voltage of described testing circuit, described the first transistor is biased in magnifying state by described bias unit；The radiofrequency signal inputted by the radio-frequency (RF) signal input end of described testing circuit sends described filtration module to after the amplification of described the first transistor, described filtration module obtains output voltage signal after the radiofrequency signal after amplifying is filtered, described output voltage signal is exported by the signal output part of described testing circuit, it is achieved the detection to described radio-frequency power amplifier output.Owing to described the first transistor is biased in magnifying state by described bias unit, the radiofrequency signal of described radio-frequency power amplifier input needs not participate in the setting of described the first transistor quiescent point, say, that the radiofrequency signal of arbitrary amplitude of input can be amplified and obtain described output voltage signal after the filtering of described filtration module by described the first transistor.Therefore described testing circuit has wider power detection scope compared with RF power sensing circuit of the prior art.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Embodiments provide a kind of power-sensing circuit, for the detection of radio-frequency power amplifier output, as in figure 2 it is shown, described testing circuit includes: bias unit 100 and follow amplifying unit 200；Wherein,
Described bias unit 100 includes the first resistance R1, and one end of described first resistance R1 is as the reference voltage input terminal VREF of described testing circuit, and the other end is connected with described amplifying unit 200 of following；
Described amplifying unit 200 of following includes the first electric capacity C1, the first transistor T1 and filtration module 210, one end of described first electric capacity C1 is as the radio-frequency (RF) signal input end RFIN of described testing circuit, and the other end electrically connects with the base stage of described first resistance R1 and described the first transistor T1 simultaneously；The colelctor electrode of described the first transistor T1 is as the power input VCC of described testing circuit, its emitter stage electrically connects with one end of described filtration module 210, and as the signal output part VDET of described testing circuit, the other end of described filtration module 210 is as the earth terminal GND of described testing circuit；
Described bias unit 100 is for being biased in magnifying state by described the first transistor T1, the radiofrequency signal that described radio-frequency power amplifier inputs is amplified sending described filtration module 210 to by described the first transistor T1, described filtration module 210 obtains output voltage signal after the radiofrequency signal after amplifying is filtered, and described output voltage signal is exported by the signal output part VDET of described testing circuit.
It should be noted that in the present embodiment, described first electric capacity C1 has not only acted as the effect of logical exchange stopping direct current, and what be additionally operable to avoid between described testing circuit and described radio-frequency power amplifier signal interferes.
On the basis of above-described embodiment, in one embodiment of the invention, as shown in Figure 3, described filtration module 210 includes the 3rd electric capacity C3 and the six resistance R6, described 3rd electric capacity C3 and the six resistance R6 is in parallel, one end electrically connects with the emitter stage of described the first transistor T1, and the other end electrically connects with the earth terminal GND of described testing circuit.
It should be noted that in the present embodiment, described filtration module 210 is low-pass filtering module 210.The present embodiment provide only the form of the composition of a kind of possible filtration module 210, and the particular make-up structure of described filtration module 210 is not limited by the present invention, as long as the effect of filtering can be played, specifically depending on practical situation.
On the basis of above-described embodiment, in another embodiment of the present invention, as shown in Figure 4, described bias unit 100 also includes transistor seconds T2, first pole of described transistor seconds T2 is connected to described first resistance R1 one end, and its second pole is connected to the connection node of described first electric capacity C1 and the first transistor T1.
It should be noted that in the present embodiment, due to the existence of described transistor seconds T2, described testing circuit can synchronize to turn off with described radio-frequency power amplifier.This is because described reference voltage input terminal VREF is connected with the power input VCC of the reference voltage provided for described radio-frequency power amplifier, when described radio-frequency power amplifier normal operation, the amplitude of described reference voltage is generally the transistor base-emitter voltage drop (BE ties pressure drop) of twice.When the amplitude of reference voltage ties pressure drop much smaller than the BE of twice, described radio-frequency power amplifier will be closed, and due to the existence of described transistor seconds T2, when the amplitude of described reference voltage ties pressure drop much smaller than the BE of twice, described transistor seconds T2 will not be switched on, now described testing circuit will not work, and then the synchronization realizing described testing circuit and described radio-frequency power amplifier turns off, avoiding when described radio-frequency power amplifier turns off, described testing circuit occurs also in the situation of duty.
And in the present embodiment, when described radiofrequency signal is big signal and when being in negative half period, it is likely that make described the first transistor T1 turn off, now described transistor seconds T2 conducting, stored charge on described first electric capacity C1；When described radiofrequency signal is in positive half cycle, on described first electric capacity C1, the electric charge of accumulation amplifies through described the first transistor T1 after superposing with described radiofrequency signal, and after the filter action of described filtration module 210, obtain output voltage signal, owing on described first electric capacity C1, the electric charge of accumulation can make the amplitude of described radiofrequency signal increase, and then the radiofrequency signal making amplitude only small also is able to be detected by described testing circuit, thus widening the power detection scope of described testing circuit further.
Also, it should be noted in the present embodiment, described transistor seconds T2 is audion, the first of described transistor seconds T2 extremely base stage and colelctor electrode, the second extremely emitter stage；But in other embodiments of the invention, described transistor seconds T2 can also be diode, the first of described transistor seconds T2 extremely diode cathode, the second extremely diode cathode.This is not limited by the present invention, specifically depending on practical situation.
On the basis of above-described embodiment, in yet another embodiment of the present invention, as shown in Figure 5, described amplifying unit 200 of following also includes the second resistance R2, described second resistance R2 is connected between described first electric capacity C1 and described testing circuit radio-frequency (RF) signal input end RFIN, for making the impedance matching between described testing circuit and described radio-frequency power amplifier.
It should be noted that in the present embodiment, by selecting the resistor of different resistance values can realize the impedance matching between described testing circuit and different radio-frequency power amplifiers as described second resistance R2.And if be not provided with described second resistance R2, most of output of described radio-frequency power amplifier may be transferred in described testing circuit by described testing circuit radio-frequency (RF) signal input end RFIN, and then causes that the output of described radio-frequency power amplifier and efficiency reduce.The concrete value of the resistance value of described second resistance R2 is not limited by the present invention, its resistance value difference according to described radio-frequency power amplifier, and the difference of described radio-frequency power amplifier output stage and different, specifically depending on practical situation.
On the basis of above-described embodiment, in yet another embodiment of the present invention, as shown in Figure 6, described bias unit 100 also includes temperature compensation module 110, one end of described temperature compensation module 110 is connected to the connection node of described first resistance R1 and described transistor seconds T2, the other end electrically connects with the earth terminal GND of described testing circuit, for providing temperature-compensating for described testing circuit.
It should be noted that, experiment proves when ambient temperature changes, the parameters such as current amplification factor in the Characteristic Parameters of Transistor, conduction voltage drop, reverse saturation current all can occur comparatively significantly to change, therefore described temperature compensation module 110 is for when ambient temperature changes, temperature-compensating is provided so that between the power of the described output voltage signal of described testing circuit output and the radiofrequency signal of described radio-frequency power amplifier input, keep a relatively stable relation for described testing circuit.
Fig. 7 is described testing circuit Experimental comparison figure at varying environment temperature (-40 DEG C, 0 DEG C, 30 DEG C, 50 DEG C and 80 DEG C), between the power P out of the radiofrequency signal of described testing circuit output voltage VDET and the input of described radio-frequency power amplifier.By Fig. 7 it appeared that, introducing due to described temperature compensation module 110, described testing circuit at different ambient temperatures, maintains a relatively stable curve between the power P out of the radiofrequency signal of its output voltage VDET and the input of described radio-frequency power amplifier.
On the basis of above-described embodiment, a preferred embodiment of the present invention provides the concrete structure of a kind of temperature compensation module 110, and as shown in Figure 8, described temperature compensation module 110 includes: third transistor T3, the 4th transistor T4 and the three resistance R3；Wherein,
First pole of described third transistor T3 is connected to first pole of described transistor seconds T2 and the connection node of the first resistance R1, and its second pole electrically connects with first pole of described 4th transistor T4 simultaneously；Second pole of described 4th transistor T4 electrically connects with one end of described 3rd resistance R3, and the other end of described 3rd resistance R3 is as the earth terminal GND of described testing circuit；
Described temperature compensation module 110 is for providing temperature-compensating for described testing circuit.
It should be noted that in the present embodiment, described third transistor T3 and the four transistor T4 is audion, the first of described third transistor T3 and the four transistor T4 extremely base stage and colelctor electrode, the second extremely emitter stage；But in other embodiments of the invention, described third transistor T3 and the four transistor T4 can also be diode, the first of described third transistor T3 and the four transistor T4 extremely diode cathode, the second extremely diode cathode.Which kind of device described third transistor and the 4th transistor are specifically adopted do not limit by the present invention, specifically depending on practical situation.The present embodiment provide only the composition structure of a kind of described temperature compensation module 110, and the particular make-up structure of described temperature compensation module 110 is not limited by the present invention, specifically depending on practical situation.
It can further be stated that, in the present embodiment, described reference voltage is by after described first resistance R1, one tunnel is through described third transistor T3, the earth terminal GND of described testing circuit is arrived after 4th transistor T4 and the three resistance R3, another road is through described transistor seconds T2, the earth terminal GND of described testing circuit is arrived after the first transistor T1 and the six resistance R6, this two-way arrives the earth terminal GND of described testing circuit simultaneously after the BE of two transistors knot and a resistance, even if ambient temperature changes, the first transistor T1, transistor seconds T2, the parameter of third transistor T3 and the four transistor T4 changes simultaneously, current potential without the same node point place to described testing circuit makes a big impact, and then avoid described output voltage signal is made a big impact.
On the basis of above-described embodiment, in another preferred embodiment of the invention, described the first transistor T1 is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT；
Described transistor seconds T2 is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described third transistor T3 is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described 4th transistor T4 is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
If described transistor seconds T2, third transistor T3, the 4th transistor T4 are metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT, its first extremely base stage and colelctor electrode, the second extremely emitter stage；If described transistor seconds T2, third transistor T3, the 4th transistor T4 are Base-Emitter junction diode, then its first extremely positive pole, the second extremely negative pole.
On the basis of above-described embodiment, in another preferred embodiment of the present invention, as shown in Figure 9, described bias unit 100 also includes the second electric capacity C2, one end of described second electric capacity C2 is connected to the connection node of described first resistance R1, transistor seconds T2 and third transistor T3, the other end is connected to the earth terminal GND of described testing circuit, for stablizing the quiescent point of described bias unit 100.
It should be noted that, it is likely to affect the quiescent point of described transistor seconds T2 by the part of described transistor seconds T2 reverse transfer to described bias unit 100 by the radiofrequency signal of described radio-frequency (RF) signal input end RFIN input, and then affect the normal operation of described the first transistor T1, and the radiofrequency signal of reverse transfer to described bias unit 100 is sent to the earth terminal GND of described testing circuit by the effect of described second electric capacity C2 exactly, it is to avoid the generation of above-mentioned situation.
On the basis of above-described embodiment, in another preferred embodiment of the present invention, as shown in Figure 10, described testing circuit also includes partial pressure unit 300, and described partial pressure unit 300 includes the 4th resistance R4 and the five resistance R5；Wherein,
One end of described 4th resistance R4 is connected to the emitter stage of described the first transistor T1 and the connection node of described filtration module 210, and the other end is connected to the signal output part VDET of described testing circuit；
One end of described 5th resistance R5 is connected to the connection node of described 4th resistance R4 and described testing circuit signal output part VDET, and the other end is connected to the earth terminal GND of described testing circuit；
Described partial pressure unit 300 is for regulating the amplitude of described output voltage signal.
It should be noted that, in the present embodiment, described partial pressure unit 300 is possible not only to realize the amplitude of described output voltage signal and regulates, the Electro-static Driven Comb ability of described testing circuit can also be improved, this is because realizing on the basis that output voltage signal amplitude regulates, when the signal output part VDET of the described testing circuit electrostatic accumulated is to described testing circuit internal transmission, the branch road fiveth resistance R5 place less by impedance is sent to the earth terminal GND of described testing circuit, avoid other elements of described testing circuit are impacted, and then improve the Electro-static Driven Comb ability of described testing circuit.
Accordingly, the embodiment of the present invention additionally provides a kind of power detecting method, it is applied to the testing circuit described in any of the above-described embodiment, for detecting the output of radio-frequency power amplifier, described radio-frequency power amplifier includes signal input part, signal output part VDET, reference signal input, power input VCC, first order amplifying unit, second level amplifying unit and third level amplifying unit, as shown in figure 11, described detection method includes:
S101: the reference voltage input terminal VREF of described testing circuit is electrically connected with the reference signal input of described radio-frequency power amplifier, the power input VCC of described testing circuit is electrically connected with the power input VCC of described radio-frequency power amplifier, the outfan of the radio-frequency (RF) signal input end RFIN of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit is electrically connected；
S102: start described testing circuit and radio-frequency power amplifier, obtains output voltage signal by the signal output part VDET of described testing circuit, and described output voltage signal characterizes the output of described radio-frequency power amplifier.
On the basis of above-described embodiment, in a preferred embodiment of the invention, the outfan that the outfan of the radio-frequency (RF) signal input end RFIN of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit electrically connects as the radio-frequency (RF) signal input end RFIN of described testing circuit with described second level amplifying unit is electrically connected.
It should be noted that, in the present embodiment, owing to the load impedance of described radio-frequency power amplifier second level amplifying unit outfan is higher, the outfan that the radio-frequency (RF) signal input end RFIN of described testing circuit is connected on described second level amplifying unit electrically connects the impact being monitored avoiding the accuracy of detection of described testing circuit to receive described radio-frequency power amplifier load matched situation.
It can further be stated that, utilize the detection method described in any of the above-described embodiment that described radio-frequency power amplifier carries out power detection and all need not increase detection device on the main output channel of described radio-frequency power amplifier, from without described radio-frequency power amplifier is caused insertion loss.
In sum, a kind of power-sensing circuit and detection method are embodiments provided；Wherein, described testing circuit includes bias unit 100 and follows amplifying unit 200, and when the reference voltage input terminal VREF input reference voltage of described testing circuit, described the first transistor T1 is biased in magnifying state by described bias unit 100；After the amplification of described the first transistor T1, described filtration module 210 is sent to by the radio-frequency (RF) signal input end RFIN of the described testing circuit radiofrequency signal inputted, described filtration module 210 obtains output voltage signal after the radiofrequency signal after amplifying is filtered, described output voltage signal is exported by the signal output part VDET of described testing circuit, it is achieved the detection to described radio-frequency power amplifier output.Owing to described the first transistor T1 is biased in magnifying state by described bias unit 100, the radiofrequency signal of described radio-frequency power amplifier input needs not participate in the setting of described the first transistor T1 quiescent point, say, that the radiofrequency signal of any amplitude of input can be amplified and obtain described output voltage signal after the filtering of described filtration module 210 by described the first transistor T1.Therefore described testing circuit has wider power detection scope compared with RF power sensing circuit of the prior art.
In this specification, each embodiment adopts the mode gone forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually referring to.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (11)
1. a power-sensing circuit, for the detection of radio-frequency power amplifier output, it is characterised in that described testing circuit includes: bias unit and follow amplifying unit；Wherein,
Described bias unit includes the first resistance, and one end of described first resistance is as the reference voltage input terminal of described testing circuit, and the other end is connected with described amplifying unit of following；
Described amplifying unit of following includes the first electric capacity, the first transistor and filtration module, and one end of described first electric capacity is as the radio-frequency (RF) signal input end of described testing circuit, and the other end electrically connects with the base stage of described first resistance and described the first transistor simultaneously；The colelctor electrode of described the first transistor is as the power input of described testing circuit, its emitter stage electrically connects with one end of described filtration module, and as the signal output part of described testing circuit, the other end of described filtration module is as the earth terminal of described testing circuit；
Described bias unit is for being biased in magnifying state by described the first transistor, described the first transistor sends described filtration module to after the radiofrequency signal that described radio-frequency power amplifier inputs is amplified, described filtration module obtains output voltage signal after the radiofrequency signal after amplifying is filtered, and described output voltage signal is exported by the signal output part of described testing circuit.
2. testing circuit according to claim 1, it is characterized in that, described amplifying unit of following also includes the second resistance, described second resistance is connected between described first electric capacity and described testing circuit radio-frequency (RF) signal input end, for making the impedance matching between described testing circuit and described radio-frequency power amplifier.
3. testing circuit according to claim 2, it is characterised in that described bias unit also includes transistor seconds, the first pole of described transistor seconds is connected to described first resistance one end, and its second pole is connected to the connection node of described first electric capacity and the first transistor.
4. testing circuit according to claim 3, it is characterized in that, described bias unit also includes temperature compensation module, one end of described temperature compensation module is connected to the connection node of described first resistance and described transistor seconds, the other end electrically connects with the earth terminal of described testing circuit, for providing temperature-compensating for described testing circuit.
5. testing circuit according to claim 4, it is characterised in that described temperature compensation module includes: third transistor, the 4th transistor and the 3rd resistance；Wherein,
First pole of described third transistor is connected to the first pole of described transistor seconds and the connection node of the first resistance, and its second pole electrically connects with the first pole of described 4th transistor simultaneously；Second pole of described 4th transistor electrically connects with one end of described 3rd resistance, and the other end of described 3rd resistance is as the earth terminal of described testing circuit；
Described temperature compensation module is for providing temperature-compensating for described testing circuit.
6. testing circuit according to claim 5, it is characterised in that described the first transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT；
Described transistor seconds is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described third transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
Described 4th transistor is metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT or Base-Emitter junction diode；
If described transistor seconds, third transistor, the 4th transistor are metal-oxide semiconductor transistor or heterojunction bipolar transistor or HEMT, its first extremely base stage and colelctor electrode, the second extremely emitter stage；If described transistor seconds, third transistor, the 4th transistor are Base-Emitter junction diode, then its first extremely positive pole, the second extremely negative pole.
7. testing circuit according to claim 5, it is characterized in that, described bias unit also includes the second electric capacity, one end of described second electric capacity is connected to the connection node of described first resistance, transistor seconds and third transistor, the other end is connected to the earth terminal of described testing circuit, for stablizing the quiescent point of described bias unit.
8. testing circuit according to claim 7, it is characterised in that described testing circuit also includes partial pressure unit, and described partial pressure unit includes the 4th resistance and the 5th resistance；Wherein,
One end of described 4th resistance is connected to the emitter stage of described the first transistor and the connection node of described filtration module, and the other end is connected to the signal output part of described testing circuit；
One end of described 5th resistance is connected to the connection node of described 4th resistance and described testing circuit signal output part, and the other end is connected to the earth terminal of described testing circuit；
Described partial pressure unit is for regulating the amplitude of described output voltage signal.
9. testing circuit according to claim 1, it is characterized in that, described filtration module includes the 3rd electric capacity and the 6th resistance, described 3rd electric capacity and the 6th resistor coupled in parallel, one end electrically connects with the emitter stage of described the first transistor, and the other end electrically connects with the earth terminal of described testing circuit.
10. a power detecting method, it is applied to the testing circuit described in any one of claim 1-9, for detecting the output of radio-frequency power amplifier, described radio-frequency power amplifier includes signal input part, signal output part, reference signal input, power input, first order amplifying unit, second level amplifying unit and third level amplifying unit, it is characterized in that, described detection method includes:
The reference voltage input terminal of described testing circuit is electrically connected with the reference signal input of described radio-frequency power amplifier, the power input of the power input of described testing circuit with described radio-frequency power amplifier is electrically connected, the outfan of the radio-frequency (RF) signal input end of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit is electrically connected；
Starting described testing circuit and radio-frequency power amplifier, obtain output voltage signal by the signal output part of described testing circuit, described output voltage signal characterizes the output of described radio-frequency power amplifier.
11. detection method according to claim 10, it is characterized in that, the outfan that the outfan of the radio-frequency (RF) signal input end of described testing circuit with described first order amplifying unit or second level amplifying unit or third level amplifying unit electrically connects as the radio-frequency (RF) signal input end of described testing circuit with described second level amplifying unit is electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610060218.5A CN105717354A (en) | 2016-01-28 | 2016-01-28 | Power detection circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610060218.5A CN105717354A (en) | 2016-01-28 | 2016-01-28 | Power detection circuit and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105717354A true CN105717354A (en) | 2016-06-29 |
Family
ID=56154399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610060218.5A Pending CN105717354A (en) | 2016-01-28 | 2016-01-28 | Power detection circuit and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105717354A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108688739A (en) * | 2018-05-23 | 2018-10-23 | 西京学院 | A kind of electromechanical compound transmission device of tracked vehicle |
| CN109564264A (en) * | 2018-10-31 | 2019-04-02 | 深圳市汇顶科技股份有限公司 | Test macro |
| CN109799386A (en) * | 2017-11-17 | 2019-05-24 | 华为技术有限公司 | A kind of power detector |
| CN112343585A (en) * | 2020-10-13 | 2021-02-09 | 中石化石油工程技术服务有限公司 | Long cable power line carrier communication system for petroleum logging |
| CN114019336A (en) * | 2021-09-23 | 2022-02-08 | 北京无线电计量测试研究所 | Detection transistor temperature correction device and method |
| CN116684010A (en) * | 2023-08-03 | 2023-09-01 | 太景科技(南京)有限公司 | Radio frequency detection circuit and detector |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070066250A1 (en) * | 2005-09-22 | 2007-03-22 | Kyoichi Takahashi | Electronic parts for high frequency power amplifier and wireless communication device |
| CN101060342A (en) * | 2006-04-19 | 2007-10-24 | 硅存储技术公司 | Radio frequency power detector |
| CN101477147A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Circuit for detecting radio frequency power |
| CN101521486A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院微电子研究所 | Bias circuit of power amplifier |
| CN102624344A (en) * | 2012-03-22 | 2012-08-01 | 无锡士康通讯技术有限公司 | Power amplifier |
| CN203688660U (en) * | 2013-12-24 | 2014-07-02 | 昆山美博通讯科技有限公司 | Power detector used for RF signal detection |
| CN104849543A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Radio frequency power detection circuit |
| CN104852695A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Self-biasing power detection circuit for power amplifier |
-
2016
- 2016-01-28 CN CN201610060218.5A patent/CN105717354A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070066250A1 (en) * | 2005-09-22 | 2007-03-22 | Kyoichi Takahashi | Electronic parts for high frequency power amplifier and wireless communication device |
| CN101060342A (en) * | 2006-04-19 | 2007-10-24 | 硅存储技术公司 | Radio frequency power detector |
| CN101521486A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院微电子研究所 | Bias circuit of power amplifier |
| CN101477147A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Circuit for detecting radio frequency power |
| CN102624344A (en) * | 2012-03-22 | 2012-08-01 | 无锡士康通讯技术有限公司 | Power amplifier |
| CN203688660U (en) * | 2013-12-24 | 2014-07-02 | 昆山美博通讯科技有限公司 | Power detector used for RF signal detection |
| CN104849543A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Radio frequency power detection circuit |
| CN104852695A (en) * | 2014-02-18 | 2015-08-19 | 中国科学院微电子研究所 | Self-biasing power detection circuit for power amplifier |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799386A (en) * | 2017-11-17 | 2019-05-24 | 华为技术有限公司 | A kind of power detector |
| CN109799386B (en) * | 2017-11-17 | 2022-03-29 | 华为技术有限公司 | Power detector |
| CN108688739A (en) * | 2018-05-23 | 2018-10-23 | 西京学院 | A kind of electromechanical compound transmission device of tracked vehicle |
| CN108688739B (en) * | 2018-05-23 | 2021-02-02 | 西京学院 | Electromechanical compound transmission device of tracked vehicle |
| CN109564264A (en) * | 2018-10-31 | 2019-04-02 | 深圳市汇顶科技股份有限公司 | Test macro |
| US11486955B2 (en) | 2018-10-31 | 2022-11-01 | Shenzhen GOODIX Technology Co., Ltd. | Test system |
| CN112343585A (en) * | 2020-10-13 | 2021-02-09 | 中石化石油工程技术服务有限公司 | Long cable power line carrier communication system for petroleum logging |
| CN114019336A (en) * | 2021-09-23 | 2022-02-08 | 北京无线电计量测试研究所 | Detection transistor temperature correction device and method |
| CN114019336B (en) * | 2021-09-23 | 2023-10-03 | 北京无线电计量测试研究所 | Temperature correction device and method for detection transistor |
| CN116684010A (en) * | 2023-08-03 | 2023-09-01 | 太景科技(南京)有限公司 | Radio frequency detection circuit and detector |
| CN116684010B (en) * | 2023-08-03 | 2023-12-15 | 太景科技(南京)有限公司 | Radio frequency detection circuit and detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105717354A (en) | Power detection circuit and method | |
| CN104158500B (en) | Radio-frequency power amplifier | |
| CN101477147B (en) | Circuit for detecting radio frequency power | |
| CN100488034C (en) | CMOS self-adaptive biasing circuit | |
| CN110190824A (en) | A kind of active biased network and a kind of radio-frequency power amplifier | |
| CN109428553A (en) | Bias circuit and power amplifier circuit | |
| CN101719757A (en) | Over-current protection circuit of power amplifier and implementing method | |
| CN211063598U (en) | Circuit and electronic device | |
| CN109150115A (en) | A kind of radio-frequency power amplifier biasing circuit | |
| CN102655434A (en) | Power detector of radio frequency power amplifier | |
| CN106505961A (en) | The automatic gain control circuit of quick response | |
| CN107147365B (en) | Class-E power amplifier | |
| CN207336632U (en) | A kind of radio-frequency power supply power-sensing circuit | |
| CN202075340U (en) | Power detector for radio-frequency power amplifier | |
| CN103187937A (en) | Differential radio-frequency amplifier based on dynamic self-biasing circuit | |
| CN203893865U (en) | Multi-type signal configuration circuit used for agricultural analog input acquisition module | |
| CN103036408A (en) | Power supply filter circuit | |
| CN110022136A (en) | Filter network | |
| CN112485494A (en) | Current detection circuit based on triode | |
| CN210157152U (en) | Voltage temperature drift compensation circuit of CATV signal amplifier | |
| CN103326675A (en) | Linear radiofrequency power amplifier | |
| CN202794317U (en) | Zero cross detection circuit structure | |
| CN207652393U (en) | A kind of amplifying triode output-stage circuit | |
| CN207053472U (en) | High-frequency power amplifying circuit | |
| CN103698588A (en) | Zero-crossing detection circuit structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination |