CN207053472U - High-frequency power amplifying circuit - Google Patents
High-frequency power amplifying circuit Download PDFInfo
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- CN207053472U CN207053472U CN201720580069.5U CN201720580069U CN207053472U CN 207053472 U CN207053472 U CN 207053472U CN 201720580069 U CN201720580069 U CN 201720580069U CN 207053472 U CN207053472 U CN 207053472U
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- transistor
- base stage
- circuit
- choke coil
- high frequency
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Abstract
A kind of high-frequency power amplifying circuit, it includes high-frequency amplifier, it is characterised in that the high-frequency amplifier includes：The first transistor, second transistor, the first high frequency choke coil, the second high frequency choke coil, the first biasing circuit, the second biasing circuit and electric capacity, first biasing circuit is connected to the base stage of the first transistor, for providing bias current according to base stage of the control voltage to the first transistor；The grounded emitter of the first transistor, colelctor electrode are connected to the first power supply through the first high frequency choke coil；The colelctor electrode of the first transistor is also attached to the emitter stage of second transistor, the base stage of second transistor is through capacity earth, colelctor electrode is connected to second source through the second high frequency choke coil, and the second biasing circuit is connected to the base stage of second transistor, and bias current is provided for the base stage to second transistor.High-frequency power amplifying circuit provided by the utility model reduces distortion, and increases power output.
Description
Technical field
It the utility model is related to a kind of high-frequency power amplifying circuit, more particularly to a kind of high frequency being applied in mobile phone
Power amplifier.
Background technology
Usually, in amplitude-modulation system signal, especially QAM (quadrature amplitude modulation) etc. multivalue modulation in, for
The high frequency power amplifier configured is needed into the transtation mission circuit of antenna transmit power, to keep signal undistorted, high frequency power
Amplifier needs linearly to carry out Linear Amplifer to the high-frequency modulation signal of input.Therefore, in the height of the final stage as such as mobile phone
Frequency power amplifier, it is usually operated at Class A or class AB state.But generally use single tube amplifier, power output is relatively low, is
Overcome the technical problem, prior art provides a kind of cascode amplifier, and they share a biasing circuits, can cause pair
Distortion to input signal.
Utility model content
To overcome shortcoming present in prior art, goal of the invention of the present utility model is to provide a kind of high frequency power amplification
Circuit, the distortion to input signal can be reduced, and power output can be increased.
To realize the goal of the invention, the utility model provides a kind of high-frequency power amplifying circuit, and it includes High frequency amplification
Device, it is characterised in that the high-frequency amplifier includes：It is the first transistor, second transistor, the first high frequency choke coil, second high
Frequency choke coil, the first biasing circuit, the second biasing circuit and electric capacity, first biasing circuit are connected to the base of the first transistor
Pole is used to provide bias current according to base stage of the control voltage to the first transistor；The grounded emitter of the first transistor, current collection
The high frequency choke coil of pole first is connected to the first power supply；The colelctor electrode of the first transistor is also attached to the transmitting of second transistor
Pole, the base stage of second transistor are connected to second source, the second biased electrical through capacity earth, colelctor electrode through the second high frequency choke coil
Road is connected to the base stage of second transistor, and bias current is provided for the base stage to second transistor.
Preferably, the first biasing circuit includes third transistor, and the colelctor electrode of third transistor is connected to the first power supply, hair
Emitter-base bandgap grading is connected to the base stage of the first transistor through first resistor and high frequency choke coil successively, and base stage is connected to the first reference voltage.
Preferably, high-frequency power amplifying circuit also includes power supply circuit, and the power supply road includes being sequentially connected in series being connected in
Second resistance between control voltage and ground, device and 3rd resistor with PN junction, the section being connected from second resistance with PN junction
O'clock give the first biasing circuit provide reference voltage.
Preferably, the device with PN junction is formed by diode arrangement.
Preferably, the device with PN junction is formed by transistor configuration.
Compared with prior art, high-frequency power amplifying circuit provided by the utility model, as a result of what is configured as follows
Amplifier：It is the first transistor, the second crystal, the first high frequency choke coil, the second high frequency choke coil, the first biasing circuit, second inclined
Circuits and electric capacity, the base stage that first biasing circuit is connected to the first transistor are used for according to control voltage to first crystal
The base stage of pipe provides bias current；The grounded emitter of the first transistor, colelctor electrode are connected to first through the first high frequency choke coil
Power supply；The colelctor electrode of the first transistor is also attached to the emitter stage of second transistor, the base stage of second transistor through capacity earth,
Colelctor electrode is connected to second source through the second high frequency choke coil, and the second biasing circuit is connected to the base stage of second transistor, is used for
Base stage to second transistor provides bias current, so as to reduce distortion (distortion), and increases power output.
Brief description of the drawings
Fig. 1 is the circuit diagram for the high frequency power amplifier that the utility model first embodiment provides；
Fig. 2 is the circuit diagram for the high frequency power amplifier that the utility model second embodiment provides；
Fig. 3 is the circuit diagram for the high frequency power amplifier that the utility model 3rd embodiment provides；
Fig. 4 is the circuit diagram for the high frequency power amplifier that the utility model fourth embodiment provides.
Embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with accompanying drawing, it is clear that described
Embodiment is the utility model part of the embodiment, rather than whole embodiments.Based on the embodiment in the utility model, sheet
The every other embodiment that field those of ordinary skill is obtained under the premise of creative work is not made, belongs to this practicality
Novel protected scope.
In description of the present utility model, term " first ", " second ", " the 3rd " etc. are only used for describing purpose, and can not
It is interpreted as indicating or implying relative importance.
, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified in description of the present utility model
Dress ", " connection " should be interpreted broadly, such as can be joined directly together, and can also be indirectly connected, can also be by intermediary
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in utility model.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other
Conflict can is not formed to be combined with each other.
First embodiment
Fig. 1 is the circuit diagram for the high frequency power amplifier that the utility model first embodiment provides, as shown in figure 1, this reality
The high frequency power amplifier provided with new first embodiment includes high-frequency signal input IN, input matching network 300, high frequency
Amplifier 500, output matching network 400, high-frequency signal output end OUT, the first biasing circuit 100 and the second biasing circuit, its
In, high-frequency amplifier 500 includes：The first transistor T1, second transistor T2, the first high frequency choke coil L1, the second high frequency choke
L2 and electric capacity C1 is enclosed, the base stage that first biasing circuit 100 is connected to the first transistor T1 is used for according to control voltage Vcon1
Base stage to the first transistor T1 provides bias current；The first transistor T1 grounded emitter, colelctor electrode are gripped through the first high frequency
Stream circle L1 is connected to the first power Vcc 1；The first transistor T1 colelctor electrode is also attached to second transistor T2 emitter stage, the
Two-transistor T2 base stage is grounded through electric capacity C1, and colelctor electrode is connected to second source Vcc2 through the second high frequency choke coil L2, and second
Biasing circuit is connected to second transistor T2 base stage, and bias current is provided for the base stage to second transistor T2, it is preferable that
Second biased electrical routing resistance R2 is formed, and resistance R2 first end is connected to second source Vcc2, and it is brilliant that the second end is connected to second
Body pipe T2 base stage, in the utility model, as a result of the amplifier of this configuration so that high-frequency amplifier circuit reduces pair
The deformation (distortion) of input signal, and increase power output.Preferably, the first power Vcc 1 is also connect by filter capacitor C3
Ground.Second source Vcc2 is also grounded by filter capacitor C4.
There is provided the biasing circuit 100 of bias voltage to transistor T1 according to the first reference voltage includes transistor T11, described
Transistor T11 colelctor electrode is connected to power Vcc 1, and emitter stage is connected to crystal through resistance R11 and high frequency choke coil L11 successively
Pipe T1 base stage.First reference voltage is provided by the first power circuit 110, and it is used for controlling transistor T1 amount of bias, and first
Power circuit 110 includes resistance R14, transistor T12 and transistor T13, and transistor T12 connects into the structure of diode, i.e., brilliant
Body pipe T12 colelctor electrode and base stage short circuit connection；Transistor T13 connects into the colelctor electrode of the structure of diode, i.e. transistor T13
Connected with base stage short circuit.Resistance R14 first end is connected to control voltage Vcon1, and the second end is connected to transistor T12 base
Pole, transistor T12 and transistor T13 are connected in series, and are connected between resistance R14 and overshoot control circuit.Control signal
Vcon1 is used for the startup and stopping for controlling biasing circuit 100.In first power circuit 110, resistance R14, transistor T12 are set
It is in order to which in temperature change, because temperature drift, caused modulation accuracy reduce, above-mentioned part plays temperature-compensating with T13
Effect.In the utility model, the node that resistance R11 and high frequency choke coil L11 are in series is also through bypassing electric capacity C12 ground connection.
During control voltage Vcon1 rises, accelerating circuit is used to temporarily improve the ginseng exported from power circuit 110
Voltage is examined, so as to improve by incrementss of the biasing circuit 100 to transistor T1.Accelerating circuit includes electric capacity C11, time constant
Control circuit, discharge circuit and overshoot control circuit, electric capacity C11 first end are connected to control voltage Vcon1, the connection of the second end
In time constant control circuit, discharge circuit is in parallel with electric capacity C11 to be contacted.Discharge circuit includes transistor T16, the connection of its grid
Yu Di, source electrode are connected to transistor T14 base stage, and drain electrode is connected to control voltage Vcon1.Time constant control circuit includes crystalline substance
Body pipe T14, resistance R12 and transistor T15, transistor T14 base stage are connected to electric capacity C11 the second end, and colelctor electrode is connected to
Voltage vcc 1, emitter stage are connected to resistance R12 first end；Resistance R12 the second end is connected to transistor T15 base stage；It is brilliant
Body pipe T15 colelctor electrode is connected to voltage Vcon1, and emitter stage is connected to ground through resistance R13.Time constant control circuit is used for true
It is scheduled on the time constant of electric capacity C11 charging and discharging.Circuit is overshooted to be used to determine from the reference voltage of the output of power circuit 110
Amount, according to electric capacity C11 discharge capacity, reference voltage temporarily increases.For example, overshoot circuit can only include resistance
R13 circuit, resistance R13 first end are connected to ground, and the second end is connected to power circuit 110.
In high frequency power amplifier shown in Fig. 1, high-frequency signal from input IN input, and after through input matching network
300 progress impedance matchings are input to the base stage of the grounded emitter amplifier including transistor T1, amplified to be input to including transistor
The emitter stage of T2 common-base amplifier, then exported through power amplification from transistor T2 colelctor electrode, and after through output matching network
400 carry out being impedance-matched to output end OUT with antenna (in Fig. 1 not showing).
During control voltage Vcon1 rises, electric capacity C11 is charged, charging current is successively from the base of transistor 14
Pole is flowed into resistance R13 to emitter stage, resistance R12, transistor T15 base stage to emitter stage.Bias transistor T11 base stage
The provisional rise of current potential, raise amplifying transistor T1 base bias, so that transistor T1 gain temporarily rises
It is high.During control voltage Vcon1 declines, the charging charge on electric capacity C11 is discharged by transistor T16.In the utility model by
In being configured with accelerating circuit, further suppress due to reduction of the heat caused by amplifier to modulation accuracy.
Second embodiment
The high-frequency power amplifying circuit of the utility model second embodiment offer is described with reference to Fig. 2, as shown in Fig. 2
The high-frequency power amplifying circuit that the high-frequency power amplifying circuit that the utility model second embodiment provides provides with first embodiment
Different is only the configuration difference of the first power circuit for providing reference voltage to the first biasing circuit, second embodiment
In, the first power circuit 110 includes resistance R14, diode D1 and diode D2.Resistance R14 first end is connected to control electricity
Vcon1 is pressed, the second end is connected to diode D1 positive pole, and diode D1 negative pole is connected to ground through overshooting circuit.Control signal
Vcon1 is used for the startup and stopping for controlling biasing circuit 100.In first power circuit 110, set resistance R14, diode D1 and
Diode D2 is the influence in order to suppress temperature to modulation accuracy.
3rd embodiment
The high-frequency power amplifying circuit of the utility model 3rd embodiment offer is described with reference to Fig. 3, as shown in figure 3,
The high-frequency power amplifying circuit that the high-frequency power amplifying circuit that the utility model 3rd embodiment provides provides with first embodiment
Different is only that the second biasing circuit is different, in second embodiment, for providing the biasing circuit of bias voltage to transistor T2
Including transistor T21, the colelctor electrode of the transistor T21 is connected to second source Vcc2, and emitter stage is successively through resistance R21 and height
Frequency choke coil L21 is connected to transistor T2 base stage.Second reference voltage is provided by second source circuit 210, and it is used to control
Transistor T2 amount of bias, second source circuit 210 include resistance R24, transistor T22 and transistor T23, and transistor T22 connects
It is connected into the structure of diode, i.e. transistor T22 colelctor electrode and base stage short circuit connection；Transistor T23 connects into the knot of diode
The short circuit connection of structure, i.e. transistor T23 colelctor electrode and base stage.Resistance R24 first end is connected to control voltage Vcon2, and second
End is connected to transistor T22 base stage, and transistor T22 and transistor T23 are connected in series, and are connected between resistance R24 and ground.
Control signal Vcon2 is used for the startup and stopping for controlling biasing circuit 200.In second source circuit 210, resistance R24, crystalline substance are set
Body pipe T22 and T23 are in order to which in temperature change, because temperature bias, caused modulation accuracy reduce, above-mentioned part plays temperature
Spend the effect of compensation.
Fourth embodiment
The high frequency power electric discharge road of the utility model fourth embodiment offer is described with reference to Fig. 4, as shown in figure 4, this
Utility model fourth embodiment provide high-frequency power amplifying circuit include high-frequency signal input IN, input matching network 300,
Amplifier 500, output matching network 400, high-frequency signal output end OUT, the first biasing circuit 100 and the second biasing circuit 200,
Wherein, amplifier 500 includes：First FET T3, the second FET T4, the first high frequency choke coil L1, the second high frequency are gripped
Stream circle L2 and electric capacity C1, first biasing circuit 100 are connected to the first transistor T3 grid, for being given according to control voltage
First FET T3 provides gate bias；First FET T3 source ground, drain through the first high frequency choke coil L1 connections
In the first power Vcc 1；First FET T3 drain electrode is also attached to the second FET T2 source electrode, the second FET
T2 grids through electric capacity C1 be grounded, drain and be connected to second source Vcc2, the second biasing circuit 210 through the second high frequency choke coil L2
It is described for providing bias voltage, including FET T26, resistance R21 and resistance R25 to the second FET T4 grid
Effect pipe T26 drain electrode is connected to second source Vcc2, and source electrode is connected to ground through resistance R21 and resistance R25 successively.Resistance R21
The second FET T4 grid is connected to through high frequency choke coil L22 with the node that resistance R25 is in series.Resistance R25 both ends are simultaneously
It is associated with bypass electric capacity C22.
For to field should pipe T26 grid provide the second reference voltage provided by second source circuit 210, it is used to control
Field processed should pipe T4 amount of bias, second source circuit 210 is identical with the configuration of the second source circuit in 3rd embodiment, here
No longer repeat.First biasing circuit 110 is used to provide bias voltage, including FET to the first FET T3 grid
T16, resistance R11 and resistance R15, the drain electrode of the effect pipe 16 are connected to the first power Vcc 1, source electrode successively through resistance R11 and
Resistance R15 is connected to ground.The node that resistance R11 and resistance R15 are in series is connected to the first FET through high frequency choke coil L11
T3 grid.Resistance R15 is in parallel with filter capacitor C12.
For to field should pipe T16 grid provide the first reference voltage provided by the first power circuit 110, its structure with
The configuration of the first power circuit in first embodiment is identical, no longer repeats here.4th implements the accelerating circuit and that provides
The accelerating circuit that one embodiment provides is also identical, also no longer repeats here.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among the protection domain that variation is created still in the utility model.
Claims (5)
1. a kind of high-frequency power amplifying circuit, it includes high-frequency amplifier, it is characterised in that the high-frequency amplifier includes：The
One transistor, second transistor, the first high frequency choke coil, the second high frequency choke coil, the first biasing circuit, the second biasing circuit and
Electric capacity, the base stage that first biasing circuit is connected to the first transistor are used for according to base stage of the control voltage to the first transistor
Bias current is provided；The grounded emitter of the first transistor, colelctor electrode are connected to the first power supply through the first high frequency choke coil；First
The colelctor electrode of transistor is also attached to the emitter stage of second transistor, and the base stage of second transistor is through capacity earth, colelctor electrode warp
Second high frequency choke coil is connected to second source, and the second biasing circuit is connected to the base stage of second transistor, for brilliant to second
The base stage of body pipe provides bias current, and the first transistor and second transistor are NPN transistor.
2. high-frequency power amplifying circuit according to claim 1, it is characterised in that the first biasing circuit includes the 3rd crystal
Pipe, the colelctor electrode of third transistor are connected to the first power supply, and emitter stage is connected to the through first resistor and high frequency choke coil successively
The base stage of one transistor, base stage are connected to the first reference voltage, and third transistor is NPN transistor.
3. high-frequency power amplifying circuit according to claim 2, it is characterised in that also including power supply circuit, the power supply
Circuit includes being sequentially connected in series the second resistance being connected between control voltage and ground, has the device and 3rd resistor of PN junction,
The node being connected from second resistance with PN junction provides reference voltage to the first biasing circuit.
4. high-frequency power amplifying circuit according to claim 3, it is characterised in that the device with PN junction is matched somebody with somebody by diode
Put and form.
5. high-frequency power amplifying circuit according to claim 4, it is characterised in that the device with PN junction is matched somebody with somebody by transistor
Put and form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720580069.5U CN207053472U (en) | 2017-05-22 | 2017-05-22 | High-frequency power amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720580069.5U CN207053472U (en) | 2017-05-22 | 2017-05-22 | High-frequency power amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207053472U true CN207053472U (en) | 2018-02-27 |
Family
ID=61491425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720580069.5U Expired - Fee Related CN207053472U (en) | 2017-05-22 | 2017-05-22 | High-frequency power amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207053472U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107453721A (en) * | 2017-05-22 | 2017-12-08 | 公安海警学院 | High-frequency power amplifying circuit |
-
2017
- 2017-05-22 CN CN201720580069.5U patent/CN207053472U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107453721A (en) * | 2017-05-22 | 2017-12-08 | 公安海警学院 | High-frequency power amplifying circuit |
| CN107453721B (en) * | 2017-05-22 | 2023-04-18 | 公安海警学院 | High-frequency power amplifying circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180227 Termination date: 20210522 |
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| CF01 | Termination of patent right due to non-payment of annual fee |