CN104820345B - Method for improving digital photoetching resolution on basis of sub-pixel modulation - Google Patents
Method for improving digital photoetching resolution on basis of sub-pixel modulation Download PDFInfo
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- CN104820345B CN104820345B CN201510265423.0A CN201510265423A CN104820345B CN 104820345 B CN104820345 B CN 104820345B CN 201510265423 A CN201510265423 A CN 201510265423A CN 104820345 B CN104820345 B CN 104820345B
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Abstract
The invention discloses a method for improving digital photoetching resolution on the basis of sub-pixel modulation. The method is characterized by comprising the following steps: in a multi-SLM (Spatial Light Modulator) digital photoetching system, adjusting relative positions of corresponding SLM projections by a five-freedom-degree precise adjustment system, controlling any two SLMs to enable two graphics projected to a substrate to generate misalignment in two directions parallel to the plane of the substrate with the misalignment distance being not more than the corresponding size of one pixel of the SLM, and enabling the digital photoetching system based on the SLMs to manufacture lines with the sizes being less than that of the single pixel so as to improve the resolution of SLM digital photoetching horizontal manufacture on the basis of sub-pixel modulation. The method disclosed by the invention has the advantages that the minimum exposure resolution limited by the size of a single SLM pixel is broken through by adopting a mode of simultaneous misaligned and overlapped exposure of the plurality of SLMs, so that the problem of low resolution of the digital photoetching system can be effectively solved, high-accuracy digital photoetching manufacture is realized and the cost of high-accuracy photoetching manufacture is greatly reduced.
Description
Technical field
It is the present invention relates to a kind of method for improving digital photolithography resolving power, more particularly to a kind of based on sub-pix modulation raising
The method of digital photolithography resolving power.
Background technology
Based on spatial light modulator（SLM）Digital photolithography method as its mask design is simple, low manufacture cost, making
The advantages of cycle is short, is at home and abroad widely paid close attention to, but due to being limited to slm pixel size and final minification projecting lens most
The impact of little Imaging Resolution, the digital optical lithography for being currently based on SLM are suitable only for making micro- knot more than micron dimension
Structure.It is limited to break through this making, mainly there are two kinds of solution routes：One is the Pixel Dimensions for reducing SLM, and another kind is to improve
The Imaging Resolution of final minification lens.As the reduction of slm pixel size must rely on MEMS（MEMS）The maturation of technology
Development, it is extremely difficult to be reduced, therefore improves photoetching resolution for the digital optical lithography based on SLM both at home and abroad at present
The research of power is mainly set about in terms of the minimum Imaging Resolution of final minification lens is improved, but manufactures and designs high resolution final minification lens
Cost with resolving power raising into series increase, constrain significantly its development.For being currently based on the digital mask light of SLM
The limited problem of resolving power is carved, a kind of digital photolithography method modulated based on sub-pix is proposed, to improve the resolution of digital photolithography
Power.
The content of the invention
It is an object of the invention to provide a kind of digital photolithography method modulated based on sub-pix, to solve based on SLM's
Digital optical lithography resolving power limitation problem.The method difference SLM location of projections small size dislocation in substrate by control,
To realize that the sub-pix to exposure dose is modulated, so as to produce the micro structure less than single slm pixel correspondingly-sized, it is right to realize
The raising of digital photolithography resolving power.
The present invention is achieved like this, and it is characterized in that passing through multiple cascades by the light that same ultraviolet light source system sends
Ratio beam splitter be divided into some Shu Guangqiang identicals planar light beams, then each beam planar light is incided with fixed angle multiple
SLM, the figure of each SLM modulation independently carry out precise control by computer, then modulate all SLM（Reflection is transmitted）'s
Exposure image is participated in optically coupling to same final minification lens, realizes that with this multiple different SLM are combined while carrying out
Exposure.The position that each SLM is projected in substrate answers the control system of SLM to be fine-tuned by fixing phase, and control system can
The relative position of corresponding SLM projections is adjusted by five degree of freedom fine adjustment system, is controlled with this between different SLM projections
Relative exposure position.Control any two of which SLM so as to project to two width figures of substrate in two parallel to base plane
Dislocation is produced on individual direction, and dislocation distance is not more than the corresponding size of SLM one pixel of projection, so that based on SLM's
Etching system is produced less than Pixel Dimensions（That is sub-pix）Lines, realize based on sub-pix modulation improve SLM digital photolithographies
Resolving power is made laterally.
The spectroscopical ultraviolet light of arrival ratio of the present invention is through collimation and the preferable light of uniformity, is wherein collimated
System and light source intensity distributing homogeneity adjustment system（Such as plane fly_eye lens array）It is included in ultraviolet light source system.
SLM of the present invention includes all reflections such as DMD, LCD, the spatial light modulator of transmission principle.
The fixed angle that multiple SLM are incided with fixed angle of the present invention is adjusted because the working mechanism of SLM is different
It is whole, SLM one fixed angle of incidence of correspondence of each model.
Five degree of freedom of five degree of freedom fine adjustment system of the present invention include three dimensions translation and two respectively
The rotation adjustment of individual space angle.
Dislocation of the present invention refers to that two SLM project to the position of the two-dimensional discrete figure in substrate and do not have one a pair
Should be on the identical position of substrate.
The corresponding size of single pixel of the present invention refers to an infinitesimal in the battle array of SLM faces（That is single pixel）Through final minification
The size that lens projects are projected in substrate.
It is an advantage of the invention that：By the way of the projection staggered superposition exposure simultaneously of multiple SLM, single SLM pictures are broken through
The minimum exposure resolving power of plain size limitation, can the low problem of effectively solving digital photolithography system resolving power, realize the high-precision number of degrees
Word photoetching making, substantially reduces high accuracy photoetching making cost.
Description of the drawings
Double SLM digital photolithography system schematic diagrams of the Fig. 1 for the embodiment of the present invention.
In figure, 1, visible LED focusing light source；2nd, 1# shutters；3rd, 2# shutters；4th, ultraviolet light source system；5th, 1# beam splitting
Mirror； 6、2#SLM；7th, total reflective mirror；8th, 2# beam splitters；9th, 3# beam splitters；10th, final minification projecting lens；11st, substrate； 12、
Three-D displacement platform； 13、1#SLM；14th, five degree of freedom fine adjustment system；15th, SLM fixed supports；16th, control chamber 1； 17、
Computer； 18、CCD；19th, control chamber 2.
Fig. 2 is that embodiment of the present invention photoetching definition improves schematic diagram.
In figure, 1, in 1#SLM the infinitesimal of highest GTG projection；2nd, in 2#SLM the infinitesimal of highest GTG projection；3、
The lap of highest GTG infinitesimal projection in two SLM；4th, single SLM infinitesimals projection size；5th, the digital photolithography based on SLM
System minimum resolution size；6th, the double SLM digital photolithography systems minimum resolution sizes of sub-pix modulation.
Specific embodiment
As shown in figure 1, by taking reflective SLM as an example（Such as DMD）, what the present invention was realized in：First system is focused,
2# shutters 3 are closed, 1# shutters 2 are opened, it is seen that the light Jing 1# beam splitters 5 that light LED focusing light sources 1 send are divided into two, after beam splitting
Light difference Jing total reflective mirrors reach 1#SLM 13 and 2#SLM 6.1#SLM 13 and 2#SLM 6 are shown by computer simultaneous transmission respectively
Show different digital masks.Final minification is reached also cross 2# beam splitters 8 and 3# beam splitters 9 by the light that two-way SLM modulates reflection saturating
Mirror 10, the light modulated by 1# and 2#SLM final minification simultaneously are imaged onto in substrate 11.In substrate 11 into be reflected into as Jing substrates
Final minification lens, enter back into 3# beam splitters 9, then reach CCD18 by 9 beam splitting of beam splitter.The image transmitting for collecting is arrived by CCD in real time
To be monitored in real time, the controllable 16 real-time position to 1#SLM 13 of 1# control chambers of computer is adjusted computer 17,
Simultaneously by controlling case processed 19 adjusting three-D displacement platform 12, so as to can accurate adjustment substrate 11 position, realize whole system
Focusing.Making is exposed after focusing, closes 1# shutters 2, the corresponding mask of micro structure to be produced is exported respectively by computer
Then figure controls the opening time of 2# shutters 3 again to 1#SLM 13 and 2#SLM 6 with the time of exposure of designed in advance, so as to
Precise control reaches the exposure dose of substrate 11 respectively from 1#SLM 13 and 2#SLM 6.For realizing that sub-pix is modulated, 1#SLM
13 and 2#SLM 6 relative positions projected in substrate need precise control, that is, need by five degree of freedom fine adjustment system 14
The locus of fine setting 1#SLM 13, so that the relative position that 1#SLM 13 and 2#SLM 6 are projected in substrate exists
Parallel to dislocation in a direction of base plane less than Pixel Dimensions.
As shown in Fig. 2 illustrating that so that the SLM using two same models makes binary raster as an example sub-pix modulation improves number
Word photolithography resolution principle.In 1#SLM and 2#SLM, the infinitesimal of highest GTG projects 1,2 corresponding single SLM infinitesimals projection sizes
4 is equal, and the projection size 4 of single SLM infinitesimals is equal with the digital photolithography system minimum resolution size 5 based on SLM.Adjustment
Five degree of freedom fine adjustment system 14 in Fig. 1 so that 1#SLM and 2#SLM is corresponding to be projected in substrate along two SLM infinitesimals
Array distribution direction dislocation half-pixel size.As two corresponding projections of SLM have overlap-add region 3, make in region and can make
The minimum feature size of work is reduced to original 1/2nd, the i.e. double SLM of sub-pix modulation by single SLM infinitesimals projection size 4
Digital photolithography system minimum resolution size 6 is changed into original 1/2nd, so that the resolving power of etching system is doubled.
Claims (5)
1. it is a kind of to modulate the method for improving digital photolithography resolving power based on sub-pix, it is characterised in that method and step is：
Some Shu Guangqiang identicals are divided into by the ratio beam splitter of multiple cascades by the light that same ultraviolet light source system sends
Planar light beam, then each beam planar light is incided into multiple SLM with fixed angle, the figure of each SLM modulation is by computer independence
Carry out precise control；
Then exposure image is participated in what all SLM were modulated optically coupling to same final minification lens, realize multiple differences with this
SLM combine while being exposed；
The position that each SLM is projected in substrate answers the control system of SLM to be fine-tuned by fixing phase, and control system can be led to
Cross five degree of freedom fine adjustment system to adjust the relative position of corresponding SLM projections, control the phase between different SLM projections with this
To exposure position；
Control any two of which SLM so as to project to two width figures of substrate in the both direction parallel to base plane
Dislocation is produced, and dislocation distance is not more than the corresponding size of mono- pixel of SLM, so that the etching system based on SLM makes
Go out less than Pixel Dimensions（That is sub-pix）Lines, realize based on sub-pix modulation improve digital photolithography laterally make resolving power.
2. it is according to claim 1 it is a kind of modulate the method for improving digital photolithography resolving power based on sub-pix, its feature exists
In：The ultraviolet source includes high voltage mercury lamp, ultraviolet LED, ultraviolet laser, and ultraviolet light source system includes collimation and light source intensity
It is uniformly distributed adjustment system.
3. it is according to claim 1 it is a kind of modulate the method for improving digital photolithography resolving power based on sub-pix, its feature exists
In：The SLM includes digital micromirror array（DMD）, liquid crystal display（LCD）, the attached silicon display of liquid crystal（LCOS）.
4. it is according to claim 1 it is a kind of modulate the method for improving digital photolithography resolving power based on sub-pix, its feature exists
In：The five degree of freedom fine adjustment system is further extended to the control system more than five degree of freedom fine adjustment.
5. it is according to claim 1 it is a kind of modulate the method for improving digital photolithography resolving power based on sub-pix, its feature exists
In：The dislocation further includes the dislocation on all directions parallel to base plane.
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| CN106292199A (en) * | 2016-09-09 | 2017-01-04 | 武汉华星光电技术有限公司 | Exposure method |
| CN111385549B (en) * | 2018-12-28 | 2023-10-10 | 深圳光峰科技股份有限公司 | Adjusting device of spatial light modulator and projection device thereof |
| CN110095948A (en) * | 2019-05-03 | 2019-08-06 | 南昌航空大学 | A kind of optical fibre device digital photolithography method based on combination DMD |
| CN115390362A (en) * | 2021-05-25 | 2022-11-25 | 赫智科技(苏州)有限公司 | 4K photoetching method |
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| JP2005502914A (en) * | 2001-09-12 | 2005-01-27 | マイクロニック レーザー システムズ アクチボラゲット | Improved method and apparatus using SLM |
| US6707534B2 (en) * | 2002-05-10 | 2004-03-16 | Anvik Corporation | Maskless conformable lithography |
| EP1573366B1 (en) * | 2002-08-24 | 2016-11-09 | Chime Ball Technology Co., Ltd. | Continuous direct-write optical lithography |
| US6831768B1 (en) * | 2003-07-31 | 2004-12-14 | Asml Holding N.V. | Using time and/or power modulation to achieve dose gray-scaling in optical maskless lithography |
| US8251512B2 (en) * | 2004-07-08 | 2012-08-28 | Imax Corporation | Equipment and methods for the display of high resolution images using multiple projection displays |
| US7758799B2 (en) * | 2005-04-01 | 2010-07-20 | 3D Systems, Inc. | Edge smoothness with low resolution projected images for use in solid imaging |
| WO2006120634A2 (en) * | 2005-05-13 | 2006-11-16 | Nxp B.V. | Spatial light modulator device, lithographic apparatus, display device, method of producing a light beam having a spatial light pattern and method of manufacturing a device |
| CN101470354B (en) * | 2007-12-27 | 2011-02-09 | 上海科学院 | Method for improving non-mask photo-etching definition |
| CN102117015A (en) * | 2009-12-31 | 2011-07-06 | 上海科学院 | Maskless lithography device adopting digital phase shift and method thereof |
| KR20120136206A (en) * | 2011-06-08 | 2012-12-18 | 삼성전기주식회사 | Maskless processing apparatus |
| CN102331685A (en) * | 2011-09-24 | 2012-01-25 | 南昌航空大学 | Method for improving resolution of digital maskless photoetching |
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