CN1048117C - 碟形钼基钨靶的制造方法 - Google Patents

碟形钼基钨靶的制造方法 Download PDF

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CN1048117C
CN1048117C CN93103859A CN93103859A CN1048117C CN 1048117 C CN1048117 C CN 1048117C CN 93103859 A CN93103859 A CN 93103859A CN 93103859 A CN93103859 A CN 93103859A CN 1048117 C CN1048117 C CN 1048117C
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dish
molybdenum
tungsten target
base
shaped
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CN1093828A (zh
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李应泉
李亨荣
滕修仁
苏燏生
邓朝权
郑晓红
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Northwest Institute for Non Ferrous Metal Research
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Abstract

本发明的碟形钼基钨靶的制造方法,采用复合加料,一次压制成形,经氢气或真空烧结,一次锻打和机加工后就能得到蝶形钼基钨靶。克服了已有技术的缺点。本发明制得的碟形钼基钨靶的钨层厚度大于2mm,其晶粒组织细小均匀,密度>96%理论密度,与钼基层结合牢固。

Description

碟形钼基钨靶的制造方法
本发明涉及碟形钼基钨靶的制造方法。
医用X-射线管中的旋转阳极,直径为70mm、90mm和100mm等规格的碟形靶,要求材料在高温使用条件下,具有耐电子冲击,高的X-射线发射剂量和热量迅速散失的特性。因此,通常采用高熔点、高密度和高原子序数钨作为产生X-射线的焦点轨迹面;以及热容量大,比重比钨小的难熔金属钼为基复合为一体制成,从而达到产生高的X-射线发射率和长的工作寿命的目的。
目前,国内是在定型的钼基体上沉积钨层的难熔金属化合物涂层的气相沉积工艺进行制造,钨层厚度仅1mm左右,且与钼基的结合不牢。在高温使用时,钨层晶粒粗化严重,容易产生龟裂破损,X-射线衰减率>50%,加之钨钼之间常发生分离现象,因此,X-射线管的寿命极短。国外先用粉末冶金法制取钨-钼复合圆形平板烧结坯,经3-4道次锻打成圆形平板锻坯后,最终锻成碟形锻坯,进行机械加工得到产品,此法锻打道次多,工序长,而且从平板圆形烧结坯到锻成碟形锻坯过程中,由于钨钼复合板坯的局部区域容易产生加工应力集中导致锻坯裂断,所以锻造率低,产品成本高。
本发明的目的是为了克服上述的缺点,采用粉末冶金工艺制取碟形钨钼复合烧结坯,用一次热锻即可得到碟形锻坯,再稍加进行机械车削,即可得到符合要求形状和精度的产品。所得钨层厚度大于2mm,晶粒组织细小均匀,密度>96%理论密度,与钼基体结合牢固。
碟形钼基钨靶的制造方法,包括对碟形钼基钨靶复合锻坯进行金属加工,其特征在于:
a  在碟形模具腔内,先装填钼粉230克-600克,然后将钼粉整理成碟形,再加入钨粉200克-400克,再将钨粉整理成与钼粉相同的碟形,在100MPa-200MPa压力下压制成钨钼复合蝶形毛坯;
b  将压制成钨钼复合毛坯在氢气或真空1000℃-1200℃进行1.5小时的预烧结和高温2000℃-2300℃3-4小时的烧结,得到碟形钼基钨层复合烧结坯;
c  再将碟形钼基钨层复合烧结坯在氢气氛中预加热到1300℃-1500℃0.5小时后,移入锻模内,开动锻锤,以1.0×104J-2.0×104J进行一道次压力锻造成碟形钼基钨靶复合锻坯。
本发明制得的碟形钼基钨靶的钨层厚度大于2mm,其晶粒组织细小均匀,密度>96%理论密度,与钼基层结合牢固。
图1是碟形钼基钨层复合烧结坯。
图2是复合烧结坯在锻模中的示意图。
图3是碟形钼基钨靶。
结合附图对本发明进一步描述如下:
碟形钼基钨靶的制造方法,其特征在于:a.在碟形模腔内,先装填钼粉230克-600克,然后将钼粉整理成碟形,再装入钨粉200克-400克,再将钨粉整理成与钼粉相同的碟形,在100MPa-200MPa压力下压制钨钼复合碟形毛坯;b.将压制成钨钼复合毛坯在氢气或真空1000℃-1200℃进行1.5小时的预烧结和高温2000℃-2300℃3-4小时烧结,得到碟形钼基钨层复合烧结坯;c.再将碟形钼基钨层复合烧结坯在氢气氛中预加热到1300℃-1500℃0.5小时后,移入锻模内,开动锻锤,以1.0×104J-2.0×104J进行一道次压力锻造成碟形钼基钨靶复合锻坯。复合烧结坯放到锻模内的情形是,钨层1和钼基层2的放置与上模冲3的凹面及下模冲4的凸面相对应吻合,且与模套5的内壁有约0.8mm的间隙。碟形钼基钨靶锻坯经金属加工后,得到符合要求的碟形钼基钨靶。
实施例:
Φ70mm碟形钼基钨靶的制造。将240克钼粉先装入碟形模腔内,然后将钼粉整理成碟形,再加入210克钨粉,再将钨粉整理成与钼粉相同的碟形,用<200MPa的压力压制成钨钼复合碟形毛坯,在氢气1100℃-1200℃经1.5小时预烧结,再在氢气氛或真空下2000℃-2300℃ 3-4小时高温烧结制备Φ68mm-Φ72mm,钨层厚2.8mm-3.0mm,钼层厚6.5mm-7.0mm,相对密度大于90%的碟形钼基钨层复合烧结坯,其烧结坯在氢气氛下预加热到1300℃-1500℃进行0.5小时预烧结后,在Φ72mm的锻造模内,以1.1×104J-1.7×104J进行一道次锻打,所得锻坯形状、尺寸与成品件基本接近,其钨钼的相对密度>96%,再进行机械加工即可达到成品要求的规格和精度。

Claims (1)

1,碟形钼基钨靶的制造方法,包括对碟形钼基钨靶复合锻坯进行金属加工,其特征在于:
a  在碟形模腔内,先装填钼粉230克-600克,然后将钼粉整理成碟形,再装入钨粉200克-400克,再将钨粉整理成与钼粉相同的碟形,在100MPa-200MPa压力下压制钨钼复合蝶形毛坯;
b  将压制成钨钼复合毛坯在氢气或真空1000℃-1200℃进行1.5小时的预烧结和高温2000℃-2300℃3-4小时烧结,得到碟形钼基钨层复合烧结坯;
c  再将碟形钼基钨层复合烧结坯在氢气氛中预加热到1300℃-1500℃0.5小时后,移入锻模内,开动锻锤,以1.0×104J-2.0×104J进行一道次压力锻造成碟形钼基钨靶复合锻坯。
CN93103859A 1993-04-13 1993-04-13 碟形钼基钨靶的制造方法 Expired - Fee Related CN1048117C (zh)

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JP5043098B2 (ja) * 2006-05-05 2012-10-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ X線管用の陽極板及び製造の方法
CN102277558B (zh) * 2011-08-23 2012-12-12 洛阳科威钨钼有限公司 一种钨旋转镀膜的溅射管靶的制作工艺
CN106077387B (zh) * 2016-06-27 2018-08-14 泰尔重工股份有限公司 一种ld钢圆盘刀片的锻造方法
CN106531599B (zh) * 2016-10-28 2018-04-17 安泰天龙钨钼科技有限公司 一种x射线管用钨铼‑钼合金旋转阳极靶材及其制备方法
CN109702191B (zh) * 2018-12-21 2020-10-27 西安瑞福莱钨钼有限公司 一种高精度动平衡旋转阳极靶材的制备方法
CN110293223B (zh) * 2019-07-23 2022-03-22 金堆城钼业股份有限公司 一种蝶形钼钨双金属复合旋转靶的制备方法

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JPS5450290A (en) * 1977-09-28 1979-04-20 Toshiba Corp Production of target for x-ray tube

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450290A (en) * 1977-09-28 1979-04-20 Toshiba Corp Production of target for x-ray tube

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