CN104810338A - 基板结构及其制法 - Google Patents
基板结构及其制法 Download PDFInfo
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Abstract
一种基板结构及其制法,该基板结构包括:一基板本体、设于该基板本体上且具有多个开孔的绝缘保护层、以及设于各该开孔中的至少一电性接触垫与至少一环体,使各该电性接触垫对应外露于各该开孔,且各该环体对应环绕各该电性接触垫的边缘,以于后续制程将导电元件形成于各该环体中,所以于回焊该导电元件时,该环体会局限该导电元件向外扩张,因而能避免该导电元件挤压该绝缘保护层而造成该绝缘保护层碎裂的问题。
Description
技术领域
本发明涉及一种基板结构及其制法,尤指一种具有绝缘保护层的基板结构及其制法。
背景技术
随着半导体封装技术的演进,半导体装置(Semiconductor device)已开发出不同的封装型态。其中,球栅阵列式(Ball grid array,BGA),例如PBGA、EBGA、FCBGA等,为一种先进的半导体封装技术,其特点在于采用一封装基板来安置半导体元件,并于该封装基板背面植置多数个成栅状阵列排列的锡球(Solder ball),使相同单位面积的承载件上可容纳更多输入/输出连接端(I/O connection)以符合高度集积化(Integration)的半导体芯片的需求,并藉该些锡球将整个封装单元焊结并电性连接至外部电子装置。
此外,为了符合半导体封装件轻薄短小、多功能、高速度及高频化的开发方向,半导体芯片封装用的电路板(或封装基板)已朝向细线路及小孔径发展。
图1为现有封装基板1之的剖视示意图。如图1所示,提供一具有多个电性接触垫100与线路101之的基板本体10。接着,形成一防焊层11于该基板本体10上,再形成多个开孔110于该防焊层11上,且该开孔110的孔径R小于该电性接触垫100之的宽度A,使各该电性接触垫100对应外露于各该开孔110。之后,形成复数多个如焊球13于各该开孔110中之的电性接触垫100上,使该焊球13电性连接该电性接触垫100,以完成现有覆晶封装(Flip Chip Package)用之的封装基板1,令该封装基板1藉由回焊该些焊球13以结合其他电子元件,例如半导体芯片(图略)。
现有封装基板1利用该焊球13作为电性连接元件,具有缩短电性传导路径、提升效能及缩小半导体封装件等优点,因而成为现行的封装趋势。
然而,于回焊该焊球13时,该焊球13因加热而产生热膨胀现象,且该焊球13的焊料会沿着该线路101的路径延展与扩散而流入该防焊层11底下,并且由于该防焊层11与该焊球13的材质相异,导致于热膨胀系数(Coefficient of Thermal Expansion,CTE)差异的情况下,使该防焊层11发生碎裂(Crack),如图所示的碎裂处K。
此外,由于该防焊层11容易发生碎裂现象,致使制程中的化学药剂会经由该碎裂处K接触该基板本体10,因而污染该基板本体10。或者,水气会从该碎裂处K进入该基板本体10中,致使该线路101发生氧化或短路等问题。
又,在进行信赖性测试(如高温储存、落摔等试验)时,容易自该防焊层11的碎裂处K产生应力变化,而造成该防焊层11大范围的龟裂与不良等问题。
另外,虽可利用扩大该开孔110的方式,使该电性接触垫100完全外露于该开孔110’(即该开孔110’的孔径R’大于该电性接触垫100的宽度A,如图1’所示),以避免该焊球13的焊料沿该线路101的路径流入该防焊层11底下,但若该开孔110’的孔径R’太小,该焊球13依然会受热膨胀而挤压该防焊层11,致使该防焊层11发生碎裂,并于后续制程中衍生出该防焊层11整层发生大范围龟裂与不良的问题,但若为此将该开孔110’继续扩大,则会造成该基板本体10的布线空间缩小而不敷使用,且该电性接触垫100的固定力不佳而容易脱落。
另一方面,同理地,该焊球13也会发生相同问题于该半导体芯片上。
因此,如何克服上述现有技术的种种问题,实已成目前亟欲解决的问题。
发明内容
鉴于上述现有技术的种种缺失,本发明的主要目的为提供一种基板结构及其制法,能避免该导电元件挤压该绝缘保护层而造成该绝缘保护层碎裂的问题。
本发明的基板结构,包括:基板本体,其具有多个电性接触垫;绝缘保护层,其设于该基板本体上,且该绝缘保护层具有多个开孔,使各该电性接触垫对应外露于各该开孔;以及多个环体,其设于各该开孔中且对应环绕各该电性接触垫的边缘。
本发明还提供一种基板结构的制法,包括:提供一具有多个电性接触垫的基板本体;形成绝缘保护层于该基板本体上;以及形成多个开孔于该绝缘保护层上,且形成至少一环体于各该开孔中,使各该电性接触垫对应外露于各该开孔,且该环体对应环绕该电性接触垫的边缘。
前述的制法中,该环体与该开孔为同时形成,例如,移除该绝缘保护层的部分材质以形成该开孔,且保留该开孔中的该绝缘保护层的另一部分材质以作为该环体。
前述的基板结构及其制法中,该基板本体上还具有多个电性连接该电性接触垫的线路,使该环体经过该线路;或者,该电性接触垫与该线路间具有交界处,令该环体经过该交界处。
前述的基板结构及其制法中,该绝缘保护层的材质为防焊材或介电材。
前述的基板结构及其制法中,该开孔的孔径大于该电性接触垫的宽度。
前述的基板结构及其制法中,该环体对应位于该电性接触垫的边缘外。
前述的基板结构及其制法中,该环体与该绝缘保护层为相同材质,例如,该环体的材质为聚酰亚胺、苯并环丁烯或聚对二唑苯。
前述的基板结构及其制法中,还包括形成多个导电元件于各该环体中,以令该导电元件电性连接该电性接触垫。
前述的基板结构及其制法中,该基板本体为线路板或半导体基材。
前述的基板结构及其制法中,该基板本体为半导体基材时,该基板本体具有线路重布结构,且该线路重布结构电性连接该电性接触垫。另外,前述的基板结构及其制法中,还包括设于该基板本体上的金属线,连接该电性接触垫且该绝缘保护层设于部分该金属线上,使该金属线外露于该开孔中,且该环体经过该金属线。
由上可知,本发明的基板结构及其制法,藉由在该绝缘保护层的开孔中形成环体,以形成导电元件于各该环体中,所以当回焊该导电元件时,该环体会局限该导电元件向外扩张,因而该导电元件不会挤压该绝缘保护层,而能避免该绝缘保护层发生碎裂的问题。
因此,于进行其它制程时,化学药剂不会接触该基板本体,因而不会污染该基板本体,且水气也不会进入该基板本体中,所以能避免该线路发生氧化或短路等问题。
此外,于进行信赖性测试(如高温储存、落摔等试验)时,该绝缘保护层不会产生超出预期的应力变化,因而能避免该绝缘保护层发生大范围的龟裂与不良等问题。
又,当该开孔的孔径太小时,该导电元件的向外扩张仍会受该环体限制,而不会挤压该绝缘保护层,所以无需将该开孔的孔径扩大,因而能增加该基板本体的布线空间。
另外,藉由形成金属线,使该绝缘保护层(或该环体)能压固该金属线与该线路,以协助固定该电性接触垫,而避免该电性接触垫脱落。
附图说明
图1为现有封装基板的剖视示意图;
图1’为图1的另一实施例;
图2A至图2D为本发明的基板结构的制法的剖视示意图;其中,图2D’为图2D的另一实施例;以及
图3A至图3C为图2C的不同实施例的上视图;其中,图3A’为图3A的另一实施例。
主要组件符号说明
1 封装基板 10、20、20’ 基板本体
100、200 电性接触垫 101、201 线路
11 防焊层 110、110’、210 开孔
13 焊球 2 基板结构
200a 边缘 202 金属线
21 绝缘保护层 210a 环内区
210b 环外区 22、22’、32 环体
23 导电元件 24 线路重布结构
240 钝化层 241 线路重布层
25 半导体基底 250 接点
D、R、R’ 孔径 A、W 宽度
S 交界处 K 碎裂处。
具体实施方式
以下藉由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。
须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用于配合说明书所揭示的内容,以供本领域技术人员的了解与阅读,并非用于限定本发明可实施的限定条件,所以不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”及“一”等用语,也仅为便于叙述的明了,而非用于限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当也视为本发明可实施的范畴。
图2A至图2D为本发明的基板结构2的制法的剖视示意图。
如图2A所示,提供表面上具有多个电性接触垫200与多个线路201的一基板本体20。
于本实施例中,该基板本体20为线路板,其具有多个介电层(图略)及多个内部线路层(图略),且该些电性接触垫200与该些线路201设于最外层的介电层上并电性连接该内部线路层。
于其它实施例中,该基板本体20也可为半导体基材,例如半导体晶圆、芯片、具有硅穿孔(Through-Silicon Via,TSV)的中介板等,其具有多个钝化层240(如图2D’所示)及多个内部积体线路(图略)或线路重布层241(如图2D’所示)(redistribution layer,RDL),且该些电性接触垫200与该些线路201设于最外层的钝化层240上并电性连接该内部积体线路、或者该些电性接触垫200与该些线路201作为线路重布层。
此外,该些线路201电性连接该些电性接触垫200。
另外,由于各该电性接触垫200周围及其上的制程相同,所以于图式中仅图示单一电性接触垫200以作说明,特此述明。
如图2B所示,形成一绝缘保护层21于该基板本体20上。
于本实施例中,该绝缘保护层21的材质为防焊材或介电材,例如聚酰亚胺(Polyimide,PI)、苯并环丁烯(Benezocy-clobutene,BCB)或聚对二唑苯(Polybenzoxazole,PBO)。
如图2C所示,形成多个开孔210于该绝缘保护层21上,且形成多个环体22于各该开孔210中,使各该电性接触垫200对应外露于各该开孔210,且各该环体22对应环绕各该电性接触垫200的边缘200a以外露该电性接触垫200。
于本实施例中,该开孔210的孔径D大于该电性接触垫200的宽度W,使该电性接触垫200完全外露于该开孔210,以避免后续制程的焊料沿该线路201的路径流入该绝缘保护层21底下。
此外,该环体22为几何形状,如圆形(如图3A所示的环体22)、八边形(如图3B所示的环体22’)等,且该环体22与该开孔210为同时形成,即当移除该绝缘保护层21的部分材质以形成该开孔210时,保留该开孔210中的该绝缘保护层21的另一部分材质以作为该环体22。具体地,该绝缘保护层21可定义有环内区210a与环外区210b,如图2B所示,即当移除该环内区210a与环外区210b的绝缘保护层21材质后,即形成该环体22。
又,该环体22与该绝缘保护层21为相同材质,所以该环体22的材质为聚酰亚胺(Polyimide,PI)、苯并环丁烯(Benezocy-clobutene,BCB)或聚对二唑苯(Polybenzoxazole,PBO)。
另外,该环体22对应位于该电性接触垫200的边缘200a外,且该环体22经过该线路201。
如图2D所示,形成多个如焊球、金属块等的导电元件23于各该环体22中的电性接触垫200上,使该导电元件23电性连接该电性接触垫200,以令该基板结构2藉由该些导电元件23结合其它电子元件(图略),例如,半导体晶圆、芯片、具有硅穿孔(Through-SiliconVia,TSV)的中介板、或线路板。
于其它制法实施例中,如图2D’所示,当该基板本体20’为半导体基材时,该基板本体20’包含一如晶圆或芯片的半导体基底25、设于该半导体基底25上的至少一接点250与设于该半导体基底25上的线路重布结构24,该线路重布结构24具有多个钝化层240与设于该钝化层240上的线路重布层(RDL)241,且该线路重布层241电性连接该接点250、该电性接触垫200与该线路201。
本发明的制法,藉由在该绝缘保护层21的开孔210中形成环体22,22’,以限制该导电元件23的范围,所以当回焊该导电元件23而使该导电元件23受热膨胀时,该环体22,22’会局限该导电元件23向外扩张,且即使该导电元件23的体积膨胀过大而挤压该环体22,22’,也仅会造成该环体22,22’碎裂,而不会造成该绝缘保护层21碎裂。
进一步说明,当该基板本体20’为半导体基材时,藉由形成该环体22,22’以限制该导电元件23的范围,所以当回焊该导电元件23时,能避免该绝缘保护层21与该线路重布结构24(或线路重布层241)碎裂。例如,若无该环体22,22’的设计,该导电元件23的焊料会沿着该线路201的路径延展与扩散而流入该绝缘保护层21底下,使该绝缘保护层21或该线路重布层241发生碎裂。
因此,该绝缘保护层21能保持良好的保护功能,所以于进行其它制程时,由于该绝缘保护层21或该线路重布结构24不会发生碎裂现象,致使制程中的化学药剂不会接触该基板本体20,20’,因而不会污染该基板本体20,20’。或者,水气也不会进入该基板本体20,20’中,所以能避免该线路201或该线路重布层241发生氧化或短路等问题。
此外,于进行信赖性测试(如高温储存、落摔等试验)时,该绝缘保护层21保持良好的结构完整性,所以该绝缘保护层21不会产生超出预期的应力变化,因而能避免该绝缘保护层21发生大范围的龟裂与不良等问题。
又,藉由该环体22,22’的设计,当该开孔210的孔径D太小,该导电元件23的向外扩张仍会受该环体22,22’限制,而不会挤压该绝缘保护层21,因而能避免该绝缘保护层21发生碎裂。故而,无需将该开孔210的孔径D扩大,因而能增加该基板本体20,20’的布线空间,以避免该基板本体20,20’的布线空间缩小而不敷使用的问题。
如图3A’所示,该电性接触垫200与该线路201间具有交界处S,藉由该环体32经过该交界处S,使该导电元件23于植设时即能直接抵靠在该环体32上,以避免该导电元件23因润湿作用而往该线路201的方向移动。
如图3C所示,该基板本体20上可选择性地形成一金属线202(例如,于图2C的制程中,当该开孔210的孔径D较大时),其连接该电性接触垫200的边缘200a,且该绝缘保护层21设于部分该金属线202上,使该金属线202外露于该开孔210中,而该环体22经过该金属线202。藉由该绝缘保护层21(或该环体22)压住固定该金属线202与该线路201,以协助固定该电性接触垫200的边缘200a的两侧,而避免当该开孔210的孔径D过大时而造成该电性接触垫200脱落。
另外,本发明的制法中,于其它实施例中,该环体22,22’,32可与该开孔210分别形成,且该环体22,22’,32的材质不同于该绝缘保护层21的材质。例如,先形成该开孔210,再将该环体22,22’,32放置于该开孔210中。
本发明还提供一种基板结构2,包括:一基板本体20,20’、设于该基板本体20,20’上的一绝缘保护层21、多个环体22,22’,32以及多个电性接触垫200。
所述的基板本体20,20’为线路板或半导体基材,其还具有多个电性连接该电性接触垫200的线路201,使该电性接触垫200与该线路201间具有交界处S。当该基板本体20’为半导体基材时,该基板本体20’具有线路重布结构24,且该线路重布结构24电性连接该些电性接触垫200。
所述的绝缘保护层21具有多个开孔210,使各该电性接触垫200对应外露于各该开孔210,且该开孔210的孔径D大于该电性接触垫200的宽度W,又该绝缘保护层21的材质为苯并环丁烯、聚酰亚胺或聚苯并恶唑。
所述的环体22,22’,32设于各该开孔210中且对应环绕各该电性接触垫200的边缘200a,例如,该环体22,22’对应位于该电性接触垫200的边缘200a外且该环体22经过该线路201、或者该环体32经过该交界处S。此外,该环体22,22’,32为几何形状,且该环体22,22’,32与该绝缘保护层21为相同材质,例如该环体22,22’,32的材质为苯并环丁烯、聚酰亚胺或聚苯并恶唑。
所述的基板结构2还包括设于各该环体22,22’,32中的多个导电元件23,其电性连接该电性接触垫200。
综上所述,本发明的基板结构及其制法,主要藉由在该绝缘保护层的开孔中形成环体,以将该导电元件形成于该环体中,所以当回焊该导电元件时,该环体会局限该导电元件向外扩张,以避免该绝缘保护层发生碎裂。因此,该绝缘保护层能保持良好的保护功能与结构完整性,所以能避免化学药剂、水气等侵入该基板本体中,且能避免该绝缘保护层发生大范围的龟裂与不良等问题。
此外,藉由该环体的设计,不论该开孔的孔径尺寸大小,该导电元件均会受该环体限制而不会挤压该绝缘保护层,所以能依需求缩小该开孔的孔径,以增加该基板本体的布线空间。
又,当该开孔太大时,可于该电性接触垫的周围连接该金属线与线路,以藉由该绝缘保护层(或该环体)压固该金属线与该线路,而提升该电性接触垫的固定能力,所以能避免该电性接触垫脱落。
上述实施例仅用于例示性说明本发明的原理及其功效,而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。
Claims (24)
1.一种基板结构,包括:
基板本体,其具有多个电性接触垫;
绝缘保护层,其设于该基板本体上,且该绝缘保护层具有多个开孔,使各该电性接触垫对应外露于各该开孔;以及
多个环体,其设于各该开孔中且对应各该电性接触垫的边缘。
2.如权利要求1所述的基板结构,其特征在于,该基板本体上还具有多个电性连接该电性接触垫的线路。
3.如权利要求2所述的基板结构,其特征在于,该环体经过该线路。
4.如权利要求2所述的基板结构,其特征在于,该电性接触垫与该线路间具有交界处,且该环体经过该交界处。
5.如权利要求1所述的基板结构,其特征在于,该绝缘保护层的材质为防焊材或介电材。
6.如权利要求1所述的基板结构,其特征在于,该环体对应位于该电性接触垫的边缘外。
7.如权利要求1所述的基板结构,其特征在于,该环体与该绝缘保护层为相同材质。
8.如权利要求1所述的基板结构,其特征在于,该环体的材质为聚酰亚胺、苯并环丁烯或聚对二唑苯。
9.如权利要求1所述的基板结构,其特征在于,该结构还包括设于各该环体中的多个导电元件,其电性连接该电性接触垫。
10.如权利要求1所述的基板结构,其特征在于,该基板本体为线路板或半导体基材。
11.如权利要求10所述的基板结构,其特征在于,该基板本体为半导体基材时,该基板本体具有线路重布结构,且该线路重布结构电性连接该电性接触垫。
12.一种基板结构的制法,包括:
提供一具有多个电性接触垫的基板本体;
形成绝缘保护层于该基板本体上;以及
形成多个开孔于该绝缘保护层上,且形成多个环体于各该开孔中,使各该电性接触垫对应外露于各该开孔,且该环体对应该电性接触垫的边缘。
13.如权利要求12所述的基板结构的制法,其特征在于,该基板本体上还具有多个电性连接该电性接触垫的线路。
14.如权利要求13所述的基板结构的制法,其特征在于,该环体经过该线路。
15.如权利要求13所述的基板结构的制法,其特征在于,该电性接触垫与该线路间具有交界处,且该环体经过该交界处。
16.如权利要求12所述的基板结构的制法,其特征在于,该绝缘保护层的材质为防焊材或介电材。
17.如权利要求12所述的基板结构的制法,其特征在于,该环体对应位于该电性接触垫的边缘外。
18.如权利要求12所述的基板结构的制法,其特征在于,该环体与该绝缘保护层为相同材质。
19.如权利要求12所述的基板结构的制法,其特征在于,该环体的材质为聚酰亚胺、苯并环丁烯或聚对二唑苯。
20.如权利要求12所述的基板结构的制法,其特征在于,该制法还包括形成多个导电元件于各该环体中,以令该导电元件电性连接该电性接触垫。
21.如权利要求12所述的基板结构的制法,其特征在于,该基板本体为线路板或半导体基材。
22.如权利要求21所述的基板结构的制法,其特征在于,该基板本体为半导体基材时,该基板本体具有线路重布结构,且该线路重布结构电性连接该电性接触垫。
23.如权利要求12所述的基板结构的制法,其特征在于,该环体与该开孔为同时形成。
24.如权利要求23所述的基板结构的制法,其特征在于,移除该绝缘保护层的部分材质以形成该开孔,且保留该开孔中的该绝缘保护层的另一部分材质以作为该环体。
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CN114388373A (zh) * | 2020-10-22 | 2022-04-22 | 长鑫存储技术有限公司 | 半导体封装方法及半导体结构 |
WO2023004641A1 (zh) * | 2021-07-28 | 2023-02-02 | 华为技术有限公司 | 电路基板、相关的电路组件和电子设备 |
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US11322465B2 (en) * | 2019-08-26 | 2022-05-03 | Cirrus Logic, Inc. | Metal layer patterning for minimizing mechanical stress in integrated circuit packages |
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