CN104789813A - 一种led封装用超细键合铜合金丝及其制造方法 - Google Patents
一种led封装用超细键合铜合金丝及其制造方法 Download PDFInfo
- Publication number
- CN104789813A CN104789813A CN201510038990.2A CN201510038990A CN104789813A CN 104789813 A CN104789813 A CN 104789813A CN 201510038990 A CN201510038990 A CN 201510038990A CN 104789813 A CN104789813 A CN 104789813A
- Authority
- CN
- China
- Prior art keywords
- copper
- wire
- oxygen content
- alloy wire
- total oxygen
- Prior art date
Links
- 229910000881 Cu alloys Inorganic materials 0.000 title abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 106
- 239000010949 copper Substances 0.000 claims abstract description 106
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000001301 oxygen Substances 0.000 claims abstract description 68
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 68
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound data:image/svg+xml;base64,PD94bWwgdmVyc2lvbj0nMS4wJyBlbmNvZGluZz0naXNvLTg4NTktMSc/Pgo8c3ZnIHZlcnNpb249JzEuMScgYmFzZVByb2ZpbGU9J2Z1bGwnCiAgICAgICAgICAgICAgeG1sbnM9J2h0dHA6Ly93d3cudzMub3JnLzIwMDAvc3ZnJwogICAgICAgICAgICAgICAgICAgICAgeG1sbnM6cmRraXQ9J2h0dHA6Ly93d3cucmRraXQub3JnL3htbCcKICAgICAgICAgICAgICAgICAgICAgIHhtbG5zOnhsaW5rPSdodHRwOi8vd3d3LnczLm9yZy8xOTk5L3hsaW5rJwogICAgICAgICAgICAgICAgICB4bWw6c3BhY2U9J3ByZXNlcnZlJwp3aWR0aD0nMzAwcHgnIGhlaWdodD0nMzAwcHgnIHZpZXdCb3g9JzAgMCAzMDAgMzAwJz4KPCEtLSBFTkQgT0YgSEVBREVSIC0tPgo8cmVjdCBzdHlsZT0nb3BhY2l0eToxLjA7ZmlsbDojRkZGRkZGO3N0cm9rZTpub25lJyB3aWR0aD0nMzAwJyBoZWlnaHQ9JzMwMCcgeD0nMCcgeT0nMCc+IDwvcmVjdD4KPHBhdGggY2xhc3M9J2JvbmQtMCcgZD0nTSA2MS4yOTM2LDE3My44NzcgTCAyMzguNzA2LDE3My44NzcnIHN0eWxlPSdmaWxsOm5vbmU7ZmlsbC1ydWxlOmV2ZW5vZGQ7c3Ryb2tlOiNFODQyMzU7c3Ryb2tlLXdpZHRoOjZweDtzdHJva2UtbGluZWNhcDpidXR0O3N0cm9rZS1saW5lam9pbjptaXRlcjtzdHJva2Utb3BhY2l0eToxJyAvPgo8cGF0aCBjbGFzcz0nYm9uZC0wJyBkPSdNIDYxLjI5MzYsMTI2LjEyMyBMIDIzOC43MDYsMTI2LjEyMycgc3R5bGU9J2ZpbGw6bm9uZTtmaWxsLXJ1bGU6ZXZlbm9kZDtzdHJva2U6I0U4NDIzNTtzdHJva2Utd2lkdGg6NnB4O3N0cm9rZS1saW5lY2FwOmJ1dHQ7c3Ryb2tlLWxpbmVqb2luOm1pdGVyO3N0cm9rZS1vcGFjaXR5OjEnIC8+Cjx0ZXh0IGRvbWluYW50LWJhc2VsaW5lPSJjZW50cmFsIiB0ZXh0LWFuY2hvcj0iZW5kIiB4PSc0NS4yOTM2JyB5PScxNTYnIHN0eWxlPSdmb250LXNpemU6NDBweDtmb250LXN0eWxlOm5vcm1hbDtmb250LXdlaWdodDpub3JtYWw7ZmlsbC1vcGFjaXR5OjE7c3Ryb2tlOm5vbmU7Zm9udC1mYW1pbHk6c2Fucy1zZXJpZjtmaWxsOiNFODQyMzUnID48dHNwYW4+TzwvdHNwYW4+PC90ZXh0Pgo8dGV4dCBkb21pbmFudC1iYXNlbGluZT0iY2VudHJhbCIgdGV4dC1hbmNob3I9InN0YXJ0IiB4PScyNTQuNzA2JyB5PScxNTYnIHN0eWxlPSdmb250LXNpemU6NDBweDtmb250LXN0eWxlOm5vcm1hbDtmb250LXdlaWdodDpub3JtYWw7ZmlsbC1vcGFjaXR5OjE7c3Ryb2tlOm5vbmU7Zm9udC1mYW1pbHk6c2Fucy1zZXJpZjtmaWxsOiNFODQyMzUnID48dHNwYW4+TzwvdHNwYW4+PC90ZXh0Pgo8L3N2Zz4K data:image/svg+xml;base64,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 O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 37
- 239000011574 phosphorus Substances 0.000 claims abstract description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound 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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound 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[Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reactions Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 229910027243 CuO Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract
本发明提供一种LED封装用超细键合铜合金丝，总氧含量为150～370ppm，磷含量为0～60ppm，余量为高纯铜；其中当该磷含量为0ppm时，该总氧含量为200～370ppm；当该磷含量大于0ppm时，该总氧含量为150～250ppm。本发明相应的制造方法，包括：将含氧量高的高纯铜与含氧量低的高纯铜按预定的比例进行熔炼，获取总氧含量为200～370ppm的线材；或再加入磷，获取总氧含量为150～250ppm，磷含量为60ppm以下的线材；将该线材行多道次拉拔，得到直径为15～50um的键合丝并进行退火处理。本发明能有效提升键合铜合金丝的拉丝能力，在球焊接时提高变形球的真圆度，得到优良的焊点。
Description
技术领域
[0001] 本发明涉及LED封装用的键合丝材料，尤其涉及一种LED封装用键合铜合金丝及 其制造方法。
背景技术
[0002] 键合丝（bonding wire)是不仅在1C工业中作为连接芯片与外部封装基板 (substrate)和/或多层线路板（PCB)的主要连接方式。也广泛地应用于LED的封装制程 中，近来LED的封装也出现了小型化趋势，当前对键合铜丝提出的要求达到了 0.6mil (约15 微米）。当铜线的直径达到〇. 6mil时，对线材的拉丝工序提出了更高的要求，另外线径越 细，铜线表面容易氧化问题和封装后产品的可靠性问题都面临更大的挑战。
[0003] 另外LED产业对于成本比1C更敏感，普遍希望在N2气氛下进行球焊作业，从而降 低由于使用氮氢混合气（95%N 2+5%H2)而造成的生产成本上升和消除安全生产的隐患。另 一个方面对于铜线，在球焊过程中容易出现偏心球，球焊点焊接不牢，焊点导电性能下降， 可靠性低等问题，因此在现实的使用过程中必须采用氮氢混合气作保护，从而增加了焊接 过程的成本和安全生产的难度。为克服上述问题，目前出现了表面镀钯的铜线，以改善抗氧 化问题，并提高成球性能和第二焊点的工艺窗口。然而，采用镀钯工艺，增加了产品成本，并 导致铜线的硬度进一步增加；因此如何在球焊接时得到优良的焊点才是解决上述问题的关 键所在。
[0004] 如图1A、图1B所示，球焊接过程大致可以分为两个过程：1•在冲击力（impact force)下，变形球（Free air ball，FAB)变形并部分挤出焊盘上的错层；2.在超声和键合 力（bonding force)的作用下，线材与焊盘进行剧烈摩擦，去除变形球表面和焊盘铝层上杂 物和氧化层1，露出新鲜的金属层（铜和铝），从而完成焊接结合。在实务中通常会考察变 形球的真圆度，高的真圆度是牢固焊点结合的必要条件。在图1A中，变形球变形前，电弧放 电熔化的变形球2的表面含有一层氧化膜3 ;在图1B中，在超声波的帮助下，与焊盘接触的 变形球底端的氧化膜被挤出从而产生焊接作用。
[0005] 如同在1C行业中细间距的应用要求一样，球焊点变形球的真圆度（roundness of deformed ball)越高表明球焊时的变形越均勾，则相应的焊球与LED焊面Pad所形成焊接 面（welding area)覆盖率高，结合更紧密，产品可靠性高。
发明内容
[0006] 本发明的特征和优点在下文的描述中部分地陈述，或者可从该描述显而易见，或 者可通过实践本发明而学习。
[0007] 为克服现有技术的问题，本发明提供一种LED封装用键合铜合金丝及其制造方 法，通过控制键合铜合金丝中总氧含量，有效提升键合铜合金丝的拉丝能力，且在纯氮的气 氛下进行球焊接时，能得到优良的焊点。
[0008] 本发明解决上述技术问题所采用的技术方案如下：
[0009] 根据本发明的一个方面，提供一种LED封装用超细键合铜合金丝，其特征在于，总 氧含量为150~370ppm，磷含量为0~60ppm，余量为高纯铜；其中当该磷含量为Oppm时， 该总氧含量为200~370ppm ;当该磷含量大于Oppm时，该总氧含量为150~250ppm。
[0010] 根据本发明的一个实施例，当该磷含量大于Oppm时，优选为5~60ppm。
[0011] 根据本发明的一个实施例，该总氧含量中的表面氧含量不高于150ppm。
[0012] 根据本发明的一个实施例，该高纯铜的纯度为4N以上。
[0013] 根据本发明的另一个方面，提供一种LED封装用超细键合铜合金丝的制造方法， 其特征在于，包括：
[0014] S1、将含氧量高的高纯铜与含氧量低的高纯铜按预定的比例进行熔炼，得到总氧 含量为150~370ppm的铜材；
[0015] S2、当该铜材的总氧含量为150~250ppm时，加入磷，且磷含量为60ppm以下，制 成直径为2~8mm的线材；或当该铜材的总氧含量为200~370ppm时，直接将该铜材制成 直径为2~8mm的线材；
[0016] S3、将步骤S2中获取的该线材行多道次拉拔，得到直径为15~50um的键合丝；在 拉拔过程中对线材进行至少一次退火处理，并且在拉拔完成后对键合丝进行最后一次退火 处理。
[0017] 根据本发明的一个实施例，在该步骤S2中，该磷含量为5~60ppm。
[0018] 根据本发明的一个实施例，该总氧含量中的表面氧含量不高于150ppm。
[0019] 根据本发明的一个实施例，在该步骤S3中，在拉拔过程中，在0.05~1mm处对线 材退火处理。
[0020] 根据本发明的一个实施例，该退火处理采取电退火，且电退火的时间为0.4~2 秒。
[0021] 根据本发明的一个实施例，在步骤S1中，该含氧量高的高纯铜与含氧量低的高纯 铜的纯度为4N以上。
[0022] 本发明一种LED封装用键合铜合金丝及其制造方法，通过控制总氧体含量，有效 提升键合铜合金丝的拉丝能力，获得量产水平的细键合铜合金丝。且该线材球焊时得到的 变形球的真圆度高，产品可靠性高；还可以在纯氮的气氛下进行球焊，得到优良的焊点。
[0023] 通过阅读说明书，本领域普通技术人员将更好地了解这些技术方案的特征和内 容。
附图说明
[0024] 下面通过参考附图并结合实例具体地描述本发明，本发明的优点和实现方式将会 更加明显，其中附图所示内容仅用于对本发明的解释说明，而不构成对本发明的任何意义 上的限制，在附图中：
[0025] 图1A为现有技术中的球焊接时的变形球未变形前的结构示意图。
[0026] 图1B为现有技术中的球焊接时的变形球未变形后的结构示意图。
[0027] 图2为本发明实施例的键合铜合金丝的总氧含量的测定结果示意图。
[0028] 图3为本发明实施例的键合铜合金丝制造方法的流程示意图。
[0029] 图4为本发明实施例的键合铜合金丝的微孔结构示意图。
[0030] 图5为本发明实施例的键合铜合金丝的SEM晶格大小示意图。
具体实施方式
[0031] 本发明提供一种LED封装用键合铜合金丝，其特征在于，总氧含量为150~ 370ppm，磷含量为0~60ppm，余量为高纯铜；其中当该磷含量为Oppm时，该总氧含量为 200~370ppm;当该磷含量大于Oppm时，该总氧含量为150~250ppm。可见当总氧含量为 200~250ppm时，可以自由选择是否添加磷。
[0032] 如图2所示，在本发明中，键合铜合金丝中氧的含量利用IGA方法，采用LEC0 SOOseries仪器测定。按照该方法，在样品室温度上升到700°C时，测得的氧是表面氧，而当 温度上升到2KKTC时所测得的氧气为主体氧，两者之和为总氧含量。
[0033] 在本实施例中，余量为高纯铜，纯度为4N以上；且该总氧含量中的表面氧含量不 高于 150ppm〇
[0034] 在具体实施时，当键合铜合金丝中的磷含量为Oppm，即不含有磷时，总氧含量为 200~370ppm。这种超细键合铜合金丝在队或者氮氢混合气下进行球焊接时能得到真圆 度高的变形球，可靠性高。
[0035] 当键合铜合金丝中的磷含量大于Oppm时，总氧含量为150~250ppm;其中，磷含 量优选为为5~60ppm，总氧含量优选为170ppm。这种超细键合铜合金丝在N 2下进行球焊 接时能得到真圆度高的变形球，可靠性高。
[0036] 本发明提供的超细键合铜合金丝的直径为15~50um，特别是15~25um，具有优 良的机械性能，减少在拉线过程中的断线频率，从而在〇.6mil的线径下实现量产，另外该 铜合金丝较强的抗氧化能力，在N 2或者氮氢混合气下进行球焊接时能得到真圆度高的变形 球，可靠性高。
[0037] 如图3所示，本发明还提供一种LED封装用键合铜合金丝的制造方法，包括步骤：
[0038] S1、将含氧量高的高纯铜与含氧量低的高纯铜按预定的比例进行熔炼，得到总氧 含量为150~370ppm的铜材；
[0039] S2、当该铜材的总氧含量为150~250ppm时，加入磷，且磷含量为60ppm以下，制 成直径为2~8mm的线材；或当该铜材的总氧含量为200~370ppm时，直接将该铜材制成 直径为2~8mm的线材；
[0040] S3、将步骤S2中获取的该线材行多道次拉拔，得到直径为15~50um的键合丝；在 拉拔过程中对线材进行至少一次退火处理，并且在拉拔完成后对键合丝进行最后一次退火 处理。
[0041] 具体地，在步骤S1中得到的铜线材的直径一般为6~8mm，且含氧量高的高纯铜与 含氧量低的高纯铜的纯度为4N。
[0042] 在步骤S2中获取的线材，其总氧含量中的表面氧含量不高于150ppm。在铜材的总 氧含量为150~250ppm时，可以加入磷，磷含量优选为5~60ppm，此时，总氧含量优选为为 170ppm ;需要说明的是，当总氧含量为200~250ppm时，是可以自由选择是否添加磷的。
[0043] 在步骤S3中，该多道次拉拔（也称为拉丝）可以包括粗拉、小拉、细拉、微拉等拉 拔过程，完成粗拉后的铜线材的直径可达1mm，完成小拉后的铜线材的直径可达0• 1mm，完 成细拉后的铜线材的直径可达0. 05mm，完成微拉后的铜线材的直径为0. 015~0. 025mm，即 得到直径为15~25um的键合丝。
[0044] 在该多次拉拔过程中需要对铜线材进行退火处理，特别是在该铜线材被拉伸到 0. 05~1mm时，可以采取电退火，且电退火的时间为0. 4~2秒，这样可以有效地释放线材 应力，得到合适的晶粒分布，电退火时间太短和太长会导致拉丝结果变差。随后继续拉伸， 并获得直径在15~50微米之间键合丝。上述电退火可以是在两个相邻的拉丝导轮上通电， 其间的铜线材在通过该两导轮时由于电流的作用而升温从而完成退火过程。
[0045] 本发明提供的LED封装用键合铜合金丝制造方法，通过控制高纯铜中氧的总体含 量，有效提升键合铜合金丝的拉丝能力，获得量产水平的直径约15um的细键合铜合金丝。
[0046] 当键合铜合金丝的总氧含量为150~370ppm时，在N2气氛下形成变形球后，键合 铜合金丝中原有的氧除去一部分与P反应生成P 2〇5外，大多依然存在于变形球中从而增加 了变形球的强度，从而提高了球焊时的变性球的真圆度。也就是说，变形球表面的氧能起到 一个外壳的限制作用，从而提高变形球的真圆度；而变形球内部分布的氧则增加了变形球 的机械强度，所以变形球的变形度变弱，从而使球圆度相应增加。值得注意的是在1C行业， 变形球的硬度过大会造成对1C焊盘下结构的破坏，而这种情况在LED行业中并不存在。
[0047] 下面结合具体的试验数值进一步说明本发明的技术方案。
[0048] 按下表1中的原料组成和过程参数，结合上述LED封装用键合铜合金丝的制造方 法制造出直径为15~25um的键合铜合金丝。
[0050] 表1、线材原料组成/过程参数表
[0051] 依据表1制造出直径为15~25um的键合铜合金丝对应的变形球的性能表如下表 2所示。
[0052]
[0054] 表2变形球的性能表
[0055] 表2中变形球的真圆度的分析方法如下：在用于评价的LED芯片上对每种键合铜 合金丝50次键合，测量每个球在方向1 (垂直于超声波作用的方向）和方向2 (超声波作用 的方向）的长度，这两者之差作为评价基础。
[0056] A表示两者之差大于1. 5um，小于2um ;〇表示两者之差大于1. Oum，小于1. 5um ; ◎表示两者之差大于〇• 5um，小于1. Oum。
[0057] 量产性的判据是以两次断线之间的平均拉丝长度（0.6mil)不低于5000米为标准 的。
[0058] 球焊点剪切力的测定方法为：针对每一种键合铜合金丝，在评价的LED芯片上进 行一百次键合，并通过Dage公司的万能结合试验仪器（BT 4000)对每一个压缩球进行剪切 强度的测定。
[0059] 在上述试验4中，键合铜合金丝总氧含量超过370ppm时，且此时没有添加磷，线材 中的氧对拉伸工艺产生明显不良影响，这可能是因为，铜线中出现了小的氧化铜微粒，由于 氧化铜微粒与周围铜的机械性能的差异，造成了微孔的形成，从而导致断线率的提高。请参 照图4,图4是在总氧含量高时，键合铜合金丝中微孔的SEM图片。
[0060] 在上述试验5~8中，在铜中引入了 4~60ppm的磷，由于磷所具有的细化晶粒的 作用能使得键合铜合金丝的机械强度变大，而获得良好拉丝性能和打线性能，所需要的总 氧含量是下降的，如试验6,7所揭示的，氧含量在170ppm时，可以获得良好的起打线性能。 更为重要的是由于磷的存在，可以在队下进行球焊操作，获得良好的打线性能。
[0061] 如试验9~12所揭示，当铜线材被拉伸到1mm时，此时采取电退火，且电退火的时 间为0. 4~2秒时，可以有效地释放线材应力，得到合适的晶粒分布，电退火时间太短和太 长会导致拉丝结果变差，这主要时晶粒太大或者太小造成，请参照图5,图5是在试验10条 件下所获得的铜线材SEM晶格大小图。
[0062] 当键合铜合金丝总氧含量中的表面氧含量增加时还会对第二焊点造成不良影响， 当此值超过150ppm时，第二焊点的可焊性会变得不可接受，请参照下表3,这主要体现在二 焊点拉力数据的下降。
[0064] 表3表面氧含量对第二焊点的拉力影响
[0065] 可见，本发明提供的LED封装用键合铜合金丝及其制造方法，通过控制高纯铜中 氧的总体含量，有效提升键合铜合金丝的拉伸能力，降低断线率，且当铜线材被拉伸到1mm 时，采取电退火，时间为〇. 4~2秒时，从而有效地释放线材应力，得到合适的晶粒分布；更 加入磷，使得键合铜合金丝的机械强度变大；同时控制总氧含量中的表面氧含量，防止对第 二焊点造成不良影响。该键合铜合金丝可靠性高，在球焊接时得到的变形球的真圆度高，能 得到优良的焊点。
[0066] 以上参照附图说明了本发明的优选实施例，本领域技术人员不脱离本发明的范围 和实质，可以有多种变型方案实现本发明。举例而言，作为一个实施例的部分示出或描述的 特征可用于另一实施例以得到又一实施例。以上仅为本发明较佳可行的实施例而已，并非 因此局限本发明的权利范围，凡运用本发明说明书及附图内容所作的等效变化，均包含于 本发明的权利范围之内。
Claims (10)
1. 一种LED封装用超细键合铜合金丝，其特征在于，总氧含量为150~370ppm，磷含量 为0~60ppm，余量为高纯铜；其中当所述磷含量为Oppm时，所述总氧含量为200~370ppm; 当所述磷含量大于Oppm时，所述总氧含量为150~250ppm。
2. 根据权利要求1所述LED封装用超细键合铜合金丝，其特征在于，当所述磷含量大于 Oppm时，优选为5~60ppm。
3. 根据权利要求1所述LED封装用超细键合铜合金丝，其特征在于，所述总氧含量中的 表面氧含量不高于150ppm。
4. 根据权利要求1所述LED封装用超细键合铜合金丝，其特征在于，所述高纯铜的纯度 为4N以上。
5. -种LED封装用超细键合铜合金丝的制造方法，其特征在于，包括： 51、 将含氧量高的高纯铜与含氧量低的高纯铜按预定的比例进行熔炼，得到总氧含量 为150~370ppm的铜材； 52、 当所述铜材的总氧含量为150~250ppm时，加入磷，且磷含量为60ppm以下，制成 直径为2~8mm的线材；或当所述铜材的总氧含量为200~370ppm时，直接将所述铜材制 成直径为2~8mm的线材； 53、 将步骤S2中获取的所述线材行多道次拉拔，得到直径为15~50um的键合丝；在拉 拔过程中对线材进行至少一次退火处理，并且在拉拔完成后对键合丝进行最后一次退火处 理。
6. 根据权利要求5所述LED封装用超细键合铜合金丝的制造方法，其特征在于，在所述 步骤S2中，所述磷含量为5~60ppm。
7. 根据权利要求5所述LED封装用超细键合铜合金丝的制造方法，其特征在于，所述总 氧含量中的表面氧含量不高于150ppm。
8. 根据权利要求5所述LED封装用超细键合铜合金丝的制造方法，其特征在于，在所述 步骤S3中，在拉拔过程中，在0. 05~Imm处对线材退火处理。
9. 根据权利要求8所述LED封装用超细键合铜合金丝的制造方法，其特征在于，所述退 火处理采取电退火，且电退火的时间为0. 4~2秒。
10. 根据权利要求5所述LED封装用超细键合铜合金丝的制造方法，其特征在于，在步 骤Sl中，所述含氧量高的高纯铜与含氧量低的高纯铜的纯度为4N以上。
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