CN104781695B - 用于探测器晶体的子带红外辐照 - Google Patents

用于探测器晶体的子带红外辐照 Download PDF

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Publication number
CN104781695B
CN104781695B CN201380058602.6A CN201380058602A CN104781695B CN 104781695 B CN104781695 B CN 104781695B CN 201380058602 A CN201380058602 A CN 201380058602A CN 104781695 B CN104781695 B CN 104781695B
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China
Prior art keywords
direct conversion
semiconductor layer
infrared
conversion semiconductor
radiation
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CN201380058602.6A
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English (en)
Chinese (zh)
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CN104781695A (zh
Inventor
C·赫尔曼
R·斯特德曼布克
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201380058602.6A 2012-11-09 2013-11-08 用于探测器晶体的子带红外辐照 Active CN104781695B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261724317P 2012-11-09 2012-11-09
US61/724,317 2012-11-09
PCT/IB2013/059990 WO2014072939A1 (en) 2012-11-09 2013-11-08 Sub-band infra-red irradiation for detector crystals

Publications (2)

Publication Number Publication Date
CN104781695A CN104781695A (zh) 2015-07-15
CN104781695B true CN104781695B (zh) 2019-06-28

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ID=49713431

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380058602.6A Active CN104781695B (zh) 2012-11-09 2013-11-08 用于探测器晶体的子带红外辐照

Country Status (7)

Country Link
US (1) US9664558B2 (https=)
EP (1) EP2917766B1 (https=)
JP (1) JP6310471B2 (https=)
CN (1) CN104781695B (https=)
BR (1) BR112015010277A2 (https=)
RU (1) RU2015121968A (https=)
WO (1) WO2014072939A1 (https=)

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JP6050561B1 (ja) 2014-09-26 2016-12-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 加熱装置を有する放射線検出器、それを動作させる方法及びそれを有するイメージング装置
US9571765B2 (en) 2015-06-25 2017-02-14 General Electric Company Universal four-side buttable digital CMOS imager
US9958556B1 (en) 2015-07-09 2018-05-01 Koninklijke Philips N.V. Direct conversion radiation detector
WO2017067817A1 (en) 2015-10-20 2017-04-27 Koninklijke Philips N.V. Polarization correction for direct conversion x-ray detectors
DE102015220793A1 (de) * 2015-10-23 2017-04-27 Siemens Healthcare Gmbh Röntgendetektor und/oder Gammadetektor mit Lichtbias
US9588240B1 (en) 2015-10-27 2017-03-07 General Electric Company Digital readout architecture for four side buttable digital X-ray detector
US10283557B2 (en) 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
DE102016210935B4 (de) * 2016-06-20 2020-07-09 Siemens Healthcare Gmbh Röntgendetektor mit intransparenter Zwischenschicht
EP3516426B1 (en) * 2016-09-23 2021-04-28 Shenzhen Xpectvision Technology Co., Ltd. Systems with multiple layers of semiconductor x-ray detectors
EP3422051A1 (en) 2017-06-28 2019-01-02 Koninklijke Philips N.V. Direct conversion radiation detection
CN112384827B (zh) * 2018-07-12 2024-08-02 深圳帧观德芯科技有限公司 制造辐射探测器的方法
EP3605151A1 (en) * 2018-08-01 2020-02-05 Koninklijke Philips N.V. Photon counting detector
DE102018219061A1 (de) * 2018-10-25 2020-04-30 Redlen Technologies, Inc. Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung

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US6989539B2 (en) * 2001-07-06 2006-01-24 Koninklije Philips Electronics N.V. Flat dynamic radiation detector
CN1735818A (zh) * 2003-01-06 2006-02-15 皇家飞利浦电子股份有限公司 用于计算机断层摄影的具有被遮挡的电子装置的辐射探测器
US7196334B2 (en) * 2003-04-24 2007-03-27 Koninklijke Philips Electronics N.V. X-ray detector element

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JPS61223689A (ja) * 1985-03-29 1986-10-04 Shimadzu Corp 半導体放射線位置検出装置
JP2564979B2 (ja) * 1990-09-26 1996-12-18 株式会社島津製作所 放射線検出器
US5677539A (en) 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
DE19616545B4 (de) 1996-04-25 2006-05-11 Siemens Ag Schneller Strahlungsdetektor
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US6989539B2 (en) * 2001-07-06 2006-01-24 Koninklije Philips Electronics N.V. Flat dynamic radiation detector
CN1735818A (zh) * 2003-01-06 2006-02-15 皇家飞利浦电子股份有限公司 用于计算机断层摄影的具有被遮挡的电子装置的辐射探测器
US7196334B2 (en) * 2003-04-24 2007-03-27 Koninklijke Philips Electronics N.V. X-ray detector element

Also Published As

Publication number Publication date
CN104781695A (zh) 2015-07-15
US20150285676A1 (en) 2015-10-08
JP2016504567A (ja) 2016-02-12
EP2917766B1 (en) 2019-11-06
US9664558B2 (en) 2017-05-30
RU2015121968A (ru) 2017-01-10
JP6310471B2 (ja) 2018-04-11
EP2917766A1 (en) 2015-09-16
WO2014072939A1 (en) 2014-05-15
BR112015010277A2 (pt) 2017-07-11

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