CN104779232B - 通过预形成的金属引脚的封装 - Google Patents

通过预形成的金属引脚的封装 Download PDF

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Publication number
CN104779232B
CN104779232B CN201410105946.4A CN201410105946A CN104779232B CN 104779232 B CN104779232 B CN 104779232B CN 201410105946 A CN201410105946 A CN 201410105946A CN 104779232 B CN104779232 B CN 104779232B
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metal pins
socket area
package assembling
metal
electrical connector
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CN104779232A (zh
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余振华
黄见翎
林勇志
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种封装件包括第一封装组件和第二封装组件。第一封装组件包括位于第一封装组件的表面处的第一电连接件以及位于第一电连接件的表面上的第一焊料区域。第二封装组件包括位于第二封装组件的表面处的第二电连接件以及位于第二电连接件的表面上的第二焊料区域。金属引脚具有接合至第一焊料区域的第一末端和接合至第二焊料区域的第二末端。本发明的也提供了通过预形成的金属引脚的封装。

Description

通过预形成的金属引脚的封装
技术领域
本发明总体涉及半导体工艺，更具体地，涉及通过预形成的金属引脚的封装。
背景技术
随着半导体技术的发展，半导体芯片/管芯正变得越来越小。与此同时，更多的功能需要集成到半导体管芯内。因此，半导体管芯需要将越来越多的I/O焊盘封装到更小的区域内，并且随着时间推移，快速地提升I/O焊盘的密度。因此，半导体管芯的封装变得更加困难，其对封装的产率有不利影响。
I/O焊盘密度的增大导致I/O焊盘的间距减小。因此，用于接合工艺的相邻放置的焊料区域更可能桥接。
发明内容
为解决现有技术中存在的问题，本发明提供了一种封装件，包括：第一封装组件，包括：第一电连接件，位于所述第一封装组件的表面处；及第一焊料区域，位于所述第一电连接件的表面上；第二封装组件；包括：第二电连接件，位于所述第二封装组件的表面处；及第二焊料区域，位于所述第二电连接件的表面上；以及金属引脚，包括：第一末端，接合至所述第一焊料区域；及第二末端，接合至所述第二焊料区域。
在上述封装件中，其中，所述金属引脚、所述第一电连接件和所述第二电连接件是分立部分。
在上述封装件中，其中，整个所述金属引脚具有均匀的尺寸。
在上述封装件中，其中，所述金属引脚的截面形状包括T形。
在上述封装件中，其中，所述金属引脚的截面形状包括I形。
在上述封装件中，其中，通过所述第一焊料区域的一部分将所述金属引脚的所述第一末端与所述第一电连接件物理间隔开。
在上述封装件中，其中，所述金属引脚的所述第一末端与所述第一电连接件物理接触。
根据本发明的另一个方面，提供了一种封装件，包括：第一封装组件，包括：第一金属焊盘，位于所述第一封装组件的表面处；及第一焊料区域，位于所述第一金属焊盘的表面上；第二封装组件，位于所述第一封装组件上方且接合至所述第一封装组件，其中，所述第二封装组件包括：第二金属焊盘，位于所述第二封装组件的表面处；及第二焊料区域，位于所述第二金属焊盘的表面上；以及金属引脚，包括：第一末端，接合至所述第一焊料区域且由所述第一焊料区域环绕；第二末端，接合至所述第二焊料区域且由所述第二焊料区域环绕；以及中间部分，位于所述第一焊料区域和所述第二焊料区域之间的间隔中。
在上述封装件中，其中，所述第一焊料区域具有顶面，并且其中，所述顶面包括：内部，形成环绕所述金属引脚的环形件，其中，所述内部是非平坦的；以及外部，形成环绕所述内部的环形件，其中，所述外部是平坦的，且与所述第二封装组件的主要顶面平行。
在上述封装件中，其中，通过所述第一焊料区域的一部分将所述金属引脚的所述第一末端与所述第一金属焊盘物理间隔开。
在上述封装件中，其中，通过所述第一焊料区域的一部分将所述金属引脚的所述第一末端与所述第一金属焊盘物理间隔开；通过所述第二焊料区域的一部分将所述金属引脚的所述第二末端与所述第二金属焊盘物理间隔开。
在上述封装件中，其中，所述第一焊料区域具有向内弯曲的顶面。
在上述封装件中，还包括介电薄膜，所述介电薄膜包括基本上平坦的顶面和基本上平坦的底面，所述金属引脚穿透所述介电薄膜，其中，所述基本上平坦的顶面水平于或者低于所述第二焊料区域的底端，并且所述基本上平坦的底面水平于或者高于所述第一焊料区域的顶端。
在上述封装件中，其中，所述金属引脚的所述第一末端具有第一横向尺寸，并且所述金属引脚的所述中间部分具有第二横向尺寸，所述第二横向尺寸小于所述第一横向尺寸。
根据本发明的又一个方面，提供了一种方法，包括：加热金属引脚和第一焊料区域中的一个，其中，所述第一焊料区域设置在第一封装组件的表面处；将所述金属引脚的第一末端插入到所述第一焊料区域的第一熔融部分内；固化所述第一焊料区域的所述第一熔融部分以将所述金属引脚接合至所述第一焊料区域；加热所述金属引脚和第二焊料区域中的一个，其中，所述第二焊料区域设置在第二封装组件的表面处；将所述金属引脚的第二末端插入到所述第二焊料区域的第二熔融部分；以及固化所述第二焊料区域的所述第二熔融部分以将所述金属引脚接合至所述第二焊料区域。
在上述方法中，其中，加热所述金属引脚和所述第一焊料区域中的一个包括加热所述金属引脚。
在上述方法中，其中，加热所述金属引脚和所述第一焊料区域中的一个包括加热所述第一焊料区域。
在上述方法中，其中，同时实施将所述金属引脚的所述第一末端插入到所述第一焊料区域的所述第一熔融部分内以及将所述金属引脚的所述第二末端插入到所述第二焊料区域的所述第二熔融部分内。
在上述方法中，还包括：将包括所述金属引脚的多个金属引脚倾倒在模具上方，其中，所述模具包括多个孔洞；振动所述模具和所述多个金属引脚，其中，将所述金属引脚振动到所述孔洞的其中一个中；以及设置介电薄膜，其中，所述金属引脚穿透所述介电薄膜，并且其中，所述金属引脚的相对两端伸出在所述介电薄膜外。
在上述方法中，还包括：将包括所述金属引脚的多个金属引脚倾倒在模具上方，其中，所述模具包括多个孔洞；振动所述模具和所述多个金属引脚，其中，将所述金属引脚振动到所述孔洞的其中一个中；以及设置介电薄膜，其中，所述金属引脚穿透所述介电薄膜，并且其中，所述金属引脚的相对两端伸出在所述介电薄膜外；在所述金属引脚接合至所述第一焊料区域和所述第二焊料区域之后，将所述介电薄膜保留在封装件中。
附图说明
为了更完全地理解实施例及其优点，现将结合附图进行的以下描述作为参考，其中：
图1示出了根据一些示例性实施例的封装件的截面图，其中，两个封装组件通过金属引脚接合；
图2A至图2J是根据一些示例性实施例的各种接合结构的截面图；
图3A至图4B示出了根据各个示例性实施例的将金属引脚接合至第一封装组件的中间阶段的截面图；
图5A至图8B示出了根据各个示例性实施例的将第一封装组件接合至第二封装组件的中间阶段的截面图，其中，金属引脚附接在第一封装组件上；以及
图9A至图9E是根据一些示例性实施例的在封装件的制造中的中间阶段的截面图，其中，金属引脚同时接合至第一封装组件和第二封装组件。
具体实施方式
下面详细论述了本发明的实施例的制造和使用。然而，应该理解，实施例提供了许多可以在各种具体环境中实现的可应用的概念。所论述的具体实施例仅仅是说明性的，而不用于限制本发明的范围。
根据各个示例性实施例，本发明提供了一种包括金属引脚(包括接合结构)的封装件及其形成方法。示出了形成接合结构和封装件的中间阶段。论述了实施例的变化。在各个视图和示例性实施例中，相同的参考标号用于指定相同的元件。
图1示出了封装件10的截面图。封装件10包括接合在一起的封装组件100和封装组件200。封装组件100和200的每个均可以是器件管芯、封装衬底、中介板、封装件、印刷电路板(PCB)等。当封装组件是器件管芯时，相应的封装组件100或200包括诸如晶体管的有源器件(未示出)和/或诸如电阻器、电容器等的无源器件。当封装组件是封装衬底时，相应的封装组件100或200可以是层压封装衬底，其包括构建在层压介电层中的再分布线(未示出)。封装衬底也可以是增层(build-up)衬底，其从核心开始形成，其中，通过核心中的金属连接件将形成在核心的相对两侧上再分布线互连。当封装组件是中介板时，相应的封装组件100或200包括形成在衬底中的衬底通孔(未示出)，衬底可以是半导体衬底、介电衬底等。中介板中可以不包括有源器件，且在其中可包括或可不包括无源器件。
封装组件100包括位于其表面的电连接件102。电连接件102连接至封装组件100内部的部件，该部件可以包括有源器件、金属线、通孔、金属焊盘(未示出)等。封装组件200包括位于其表面的电连接件202。电连接件202连接至封装组件200内部的部件，该部件可以包括有源器件、金属线、通孔、金属焊盘(未示出)等。在一些实施例中，电连接件102和/或202是金属焊盘，其包括铜焊盘，铝铜焊盘等。电连接件102和/或202也可以包括诸如镍层、钯层、金层等的金属层。在一些实施例中，表面介电层108形成在封装组件100的顶面处，其中，电连接件102可以是从介电层108的顶面开槽的金属焊盘。可选地，电连接件102包括介电层108的顶面之上伸出的金属柱。类似地，表面介电层208形成在封装组件200的顶面处，其中，电连接件202可以是从示出的介电层208的底面开槽的金属焊盘。可选地，电连接件202包括介电层208的底面外伸出的金属柱。
电连接件102通过金属引脚26电连接至电连接件202。通过焊料区域104将金属引脚26接合/连接至电连接件102，焊料区域104将金属引脚26电连接至电连接件102，且将金属引脚26物理固定在电连接件102上。通过焊料区域204将金属引脚26接合/连接至电连接件202，焊料区域204将金属引脚26电连接至电连接件202，且将金属引脚26物理固定在电连接件202上。在一些实施例中，一个或多个金属引脚26的中间部分没有附接在其上的焊料区域，其中，焊料区域104与各自上方的焊料区域204间隔开。
图2A至图2J示出了根据各个实施例的封装件10(图1)可以采用的各个接合结构28(图1)。在图2A至图2J中，金属引脚26电连接至各自的电连接件102和202。在一些实施例中，金属引脚26是不在焊料的典型熔融温度(诸如约200℃至约280℃)下熔融的非焊料引脚。金属引脚26可以是铜引脚、金引脚、铝引脚等，且可包括或可不包括诸如镍层的涂层。金属引脚26可以与电连接件102和202物理接触，或者可以分别通过焊料区域104和204与电连接件102和/或202间隔开。图2A至图2J中的金属引脚26的顶视形状可以是圆形、六边形、八边形、正方形或其他多边形。
参考图2A，金属引脚26与电连接件102和202物理接触。焊料区域104具有向外弯曲的表面。相反地，焊料区域204具有向内弯曲的表面。除了焊料区域104和204均具有向外弯曲的表面之外，图2B示出了类似于图2A中所示的接合结构。在金属引脚26的不同部分中，金属引脚26可以具有均匀的厚度和均匀的截面形状。例如，如果截面图是在图2A和图2B中的相同的金属引脚26的顶端、底端和中间(以及任意其他部分)处截取的，那么截面图是相同的。
在图2C中，金属引脚26的截面图是T形，且包括具有横向尺寸为W1的宽部并具有横向尺寸为W2的窄部，其中，例如，横向尺寸W1和W2可以是直径。在一些实施例中，比率W1/W2可以介于约1.2与约5的范围内。图2C示出了向外弯曲的焊料区域104的表面，以及向内弯曲的焊料区域204的表面。除了焊料区域104和204均具有向外弯曲的表面之外，图2D示出了类似于图2C中所示的接合结构。在图2D中，金属引脚26的截面图是T形。除了图2E和图2F中的金属引脚26具有I形，该I型在相对的两端处具有宽部且在宽部之间具有窄部之外，图2E和图2F所示的实施例分别类似于图2C和图2D中所示的实施例。在这些实施例中，金属引脚26的窄部可以具有均匀的横向尺寸和均匀的顶视形状。
图2G和图2H示出了金属引脚26不与电连接件102和/或202物理接触的实施例。参考图2G，金属引脚26与电连接件102间隔开。通过焊料区域104，在金属引脚26和电连接件102之间提供电连接。作为实例，金属引脚26与电连接件102之间的间距S可以介于约3μm和约30μm的范围内。在图2H中，金属引脚26与电连接件102和202均间隔开。
图2I和图2J示出了焊料区域104具有顶面104A的实施例，其中，顶面104A的至少一些外部部分104A2是平坦的，顶面104A的该外部平坦部分可以形成环绕内部部分/环形件104A1的环形件，环形件104A1可以是不平坦的。在一些实施例中，示出的焊料区域204的底面也可以具有平坦部分。
应该理解，图1至图2J中所示的各个部件包括但不限于向内弯曲的焊料表面、向外弯曲的焊料表面、均匀的金属引脚、T形金属引脚、I形金属引脚、具有平坦顶面的焊料等，根据可选实施例，可以混合这些部件以形成其他接合结构。
图3A至图3E示出了在金属引脚26的末端接合至电连接件102中的中间阶段的截面图，金属引脚26的相对的两端未接合。参考图3A和图3B，提供了封装组件100，其包括电连接件102和位于电连接件102上的焊料区域104。在如图3A所示的一些实施例中，焊料区域104具有平坦顶面，其通过对焊料区域104实施压印(用硬且平坦的表面挤压)形成，该预先形成的焊料区域可以具有如图3B所示的形状。在可选实施例中，如图3B所示，焊料区域104的表面是弯曲的。
参考图3C，通过真空头30拿起金属引脚26，真空头30配置为通过抽真空产生的力拿起金属引脚26。例如，真空吸气通道32形成在真空头30中，以33标记的方向泵出空气。真空吸气通道32包括具有横向尺寸W3的窄部和具有横向尺寸W4的宽部。横向尺寸W4略大于金属引脚26的横向尺寸W2，从而使得金属引脚26可以插入真空吸气通道32的宽部内。横向尺寸W3小于横向尺寸W2，从而使得挡住金属引脚26。将金属引脚26的温度加热至高于焊料区域104(图3A或图3B)的熔融温度。在本说明书中，曲线34表示加热。例如，可以通过加热真空头30对金属引脚26进行加热，以将热量传导至金属引脚26。可选地，通过外部热源(未示出)加热金属引脚26，其中，未加热真空头30。在一些实施例中，将金属引脚26加热至约180℃和约280℃。
参考图3D，将加热的金属引脚26插入焊料区域104，焊料区域在插入的时候未熔融。可以不加热焊料区域104，或者可以将焊料区域104加热至低于焊料区域104的熔融的温度，例如，介于约100℃和约200℃之间。加热的金属引脚26引起与金属引脚26和附近的区域接触的部分焊料区域104的局部熔融，例如，离金属引脚26约50μm的范围内。更远离金属引脚26的部分焊料区域104不熔融。通过使焊料区域104具有如图3A所示的平坦顶面，金属引脚26可以与焊料区域104的平坦表面接触，并且因此金属引脚26不太可能弯曲。作为对照，如果金属引脚26与焊料区域104的倾斜顶面接触，则由于由熔融的焊料区域104的倾斜顶面引起的表面张力不是在水平方向上，很薄的金属引脚26可能弯曲。然后，冷却并固化焊料区域104，并且因此金属引脚26接合至电连接件102。图3E中示出了产生的结构。在这些实施例中，当压印焊料区域104时(图3A)，在产生的接合结构中，在金属引脚26的接合期间未熔融的焊料区域104的外部104A2将保持平坦。而内部104A1(熔融部分)可以具有弯曲表面。平坦的外部104A2形成环绕内部104A1的环形件，内部104A1也形成环形件。
图4A和图4B示出了根据可选实施例的在将每个金属引脚26的一端接合至一个电连接件102的中间阶段的截面图。参考图4A，在这些实施例中，并非加热金属引脚26，而是熔融焊料区域104，再将金属引脚26插入熔融的焊料区域104内。然后冷却焊料区域104，且金属引脚26接合至电连接件102。图4B中示出了产生的接合结构。在产生的接合结构中，焊料区域104具有弯曲的顶面。
在将金属引脚26接合至封装组件100之后，封装组件100接合至封装组件200。根据各个实施例，在图5A至图5B、图6A至图6B、图7A至图7B和图8A至图8B中示出了相应的接合工艺。图5A至图5B、图6A至图6B、图7A至图7B和图8A至图8B中的工艺可以采用差温加热，其中，加热金属引脚26(且可能是封装组件100)和封装组件200中的一个(而不是两个)，但在可选实施例中也可以同时加热两个。
参考图5A，通过真空头36拿起封装组件200，真空头36包括真空通道38，从真空通道38泵出空气。加热封装组件200，并熔融焊料区域204，其中，通过曲线34表示加热。然后，如图5B所示，将封装组件100和200放置在一起，金属引脚26插入到熔融的焊料区域204内。在冷却和固化焊料区域204之后，封装件100和200接合在一起，且图5B中示出了产生的结构。
图6A和图6B示出了可选实施例。参考图6A，通过真空头36拿起封装组件100，其中，金属引脚26附接至封装组件100。加热封装组件200，且熔融焊料区域204。图6B示出了将金属引脚26插入熔融的焊料区域204内。在冷却和固化焊料区域204之后，封装件100和200接合在一起，且图6B中示出了产生的结构。
图7A和图7B示出了另一个可选实施例。参考图7A，通过粘合剂40将封装组件200附接至载体42，其中，封装组件200附接至金属引脚26。载体42可以是玻璃载体、陶瓷载体等。加热并熔融焊料区域204，其中，通过曲线34表示加热。然后，如图7B所示，将封装组件100和200放置在一起，金属引脚26插入熔融的焊料区域204内。然后去除如图7A所示的载体42和粘合剂40，且图7B中示出了产生的结构。
图8A和图8B示出了可选实施例。参考图8A，封装组件100通过粘合剂40附接至载体42，其中，金属引脚26附接至封装组件100。载体42可以是玻璃载体、陶瓷载体等。加热并熔融焊料区域204。图8B示出了金属引脚26插入到焊料区域204内。在冷却和固化焊料区域204之后，将封装件100和200接合在一起。然后去除如图8A所示的载体42和粘合剂40，且图8B中示出了产生的结构。
图9A至图9E示出了根据可选实施例的在通过金属引脚26将封装组件100和200结合的中间阶段的截面图。在这些实施例中，金属引脚26同时接合至封装组件100和200。参考图9A，提供了模具44。模具44可以是金属模具、陶瓷模具、石墨模具或有机物模具。在模具44中形成孔洞46，且孔洞46从模具44的平坦顶面延伸至模具44的中间层级。孔洞46的深度小于金属引脚26的长度。将孔洞46的相对位置设计为匹配图9D中的金属引脚26的相对位置。将孔洞46的横向尺寸和形状设计为在其中具有合理的边缘以支承金属引脚26。
将多个金属引脚26倾倒在模具44上，其中，金属引脚26的数量大于孔洞46的数量。然后振动模具44，从而使得金属引脚26落入孔洞46内，每个孔洞46均填充有一个金属引脚26。然后从模具44去除不在孔洞46中的多余的金属引脚26。图9A中示出了产生的结构。在一些实施例中，在这时，可以通过图3C中的真空头30拿起金属引脚26，且可以实施图3C至图8B中所示的工艺。图3C中的真空通道32的相对位置匹配图9A中的金属引脚26的相对位置，从而使得同时拿起金属引脚26。在可选实施例中，并非拿起金属引脚26且实施图3D至图8B中的工艺步骤，而是实施图9B至图9E中所示的工艺。
参考图9B，形成介电薄膜48，金属引脚26的中间部分嵌入介电薄膜48中。金属引脚26的相对两端伸出介电薄膜48外，例如，伸出部分具有大于约20μm的长度L1和L2。介电薄膜48的顶面和底面基本上是平坦的。介电薄膜48可以由聚合物或诸如玻璃的无机材料形成。在一些实施例中，介电薄膜48是预制薄膜，其层压在金属引脚26上。施加力从而使得金属引脚26穿透介电薄膜48，并且因此介电薄膜48固定在模具44的顶面上。在可选实施例中，将可流动的化合物分配到金属引脚26和模具44上。可流动的化合物的粘度足够低，从而使得可流动的化合物可以流动以具有基本平坦的顶面，金属引脚的顶端从可流动的化合物的顶面上方伸出。另一方面，可流动的化合物的粘度足够高，从而使得其将不流入孔洞46中的小间隙内，该间隙未由金属引脚26占据。在一些实施例中，可流动的化合物包括聚合物、树脂等。在可选实施例中，可流动的化合物包括诸如旋涂玻璃的无机材料。在可流动的化合物固化之后，形成固化的介电薄膜48。然后可以从模具44重新取出介电薄膜48和相应的金属引脚26。
图9C和图9D示出了通过金属引脚26接合的封装组件100和200。参考图9C，将封装组件100、金属引脚26和封装组件200对准，也将相应的焊料区域104和204以及金属引脚26对准。如通过曲线34所表示的，同时加热并熔融焊料区域104和204。然后，如图9D所示，将金属引脚26插入到熔融的焊料区域104和204内。在冷却和固化焊料区域104和204之后，封装组件100和200接合在一起。
在一些实施例中，如图9D所示，介电薄膜48保留在最终的封装件中。例如，当将图9D中的封装件组装到最终的产品中且通电时，仍然保留介电薄膜48。在可选实施例中，如图9E所示，在实施如图9D中所示的步骤之后，通过例如湿蚀刻去除介电薄膜48。
在图9A至图9E中，封装组件100和200接合至金属引脚26，同时，金属引脚26附接至介电薄膜48。在可选实施例中，封装组件100和200依次接合至金属引脚26(其附接至介电薄膜48)。
本发明的实施例具有一些有利的特征。由于将金属引脚用于互连封装组件，在接合结构中使用更少的焊料，并且因此降低了焊料区域的桥接的风险。
根据一些实施例，一种封装件包括第一封装组件和第二封装组件。第一封装部件包括位于第一封装组件的表面处的第一电连接件以及位于第一电连接件的表面上的第一焊料区域。第二封装组件包括位于第二封装组件的表面处的第二电连接件以及位于第二电连接件的表面上的第二焊料区域。金属引脚具有接合至第一焊料区域的第一末端和接合至第二焊料区域的第二末端。
根据其他实施例，一种封装件包括第一封装组件和第二封装组件。第一封装组件包括位于第一封装组件的表面处的第一金属焊盘以及位于第一金属焊盘的表面上的第一焊料区域。第二封装组件位于第一封装组件上方且接合至第一封装组件。第二封装组件包括位于第二封装组件的表面处的第二金属焊盘以及位于第二金属焊盘的表面上的第二焊料区域。金属引脚具有接合至第一焊料区域且由第一焊料区域环绕的第一末端和接合至第二焊料区域且由第二焊料区域环绕的第二末端。金属引脚还包括位于第一焊料区域和第二焊料区域之间的间隔中的中间部分，其中，没有焊料形成在中间部分上。
根据另外的实施例，一种方法包括：加热金属引脚和第一焊料区域中的一个，其中，第一焊料区域设置在第一封装组件的表面处，将金属引脚的第一末端插入第一焊料区域的第一熔融部分内，以及固化第一焊料区域的第一熔融部分以将金属引脚接合至第一焊料区域。该方法还包括加热金属引脚和第二焊料区域中的一个，其中，第二焊料区域设置在第二封装组件的表面处，将金属引脚的第二末端插入第二焊料区域的第二熔融部分内，以及固化第二焊料区域的第二熔融部分以将金属引脚接合至第二焊料区域。可以同时实施金属引脚与第一焊料区域和第二焊料区域的接合。
虽然已经详细地描述了实施例及其优势，但应该理解，在不背离由所附权利要求所限定的本发明的精神和范围的情况下，在此可做出各种改变、替代和变化。而且，本申请的范围不旨在限于说明书中所述的工艺、机器、制造、物质组成、工具、方法和步骤的具体实施例。本领域的一般技术人员将容易从本发明理解，根据本发明，可以利用现有的或今后开发的、实施与在此描述的相应实施例基本相同的功能或者实现基本相同的结果的工艺、机器、制造、物质组成、工具、方法或步骤。因此，所附权利要求旨在将这些工艺、机器、制造、物质组成、工具、方法或步骤包括在它们的保护范围内。此外，每个权利要求组成单独的实施例，并且各个权利要求和实施例的组合在本发明的范围内。

Claims (5)

1.一种形成封装件的方法，包括：
将多个金属引脚倾倒在模具上方，其中，所述模具包括多个孔洞；
振动所述模具和所述多个金属引脚，其中，将所述金属引脚振动到所述孔洞的其中一个中；
设置介电薄膜，其中，所述金属引脚穿透所述介电薄膜，并且其中，所述金属引脚的相对两端伸出在所述介电薄膜外；
加热所述金属引脚和第一焊料区域中的一个，其中，所述第一焊料区域设置在第一封装组件的表面处；
将所述金属引脚的第一末端插入到所述第一焊料区域的第一熔融部分内；
固化所述第一焊料区域的所述第一熔融部分以将所述金属引脚接合至所述第一焊料区域；
加热所述金属引脚和第二焊料区域中的一个，其中，所述第二焊料区域设置在第二封装组件的表面处；
将所述金属引脚的第二末端插入到所述第二焊料区域的第二熔融部分；以及
固化所述第二焊料区域的所述第二熔融部分以将所述金属引脚接合至所述第二焊料区域。
2.根据权利要求1所述的方法，其中，加热所述金属引脚和所述第一焊料区域中的一个包括加热所述金属引脚。
3.根据权利要求1所述的方法，其中，加热所述金属引脚和所述第一焊料区域中的一个包括加热所述第一焊料区域。
4.根据权利要求1所述的方法，其中，同时实施将所述金属引脚的所述第一末端插入到所述第一焊料区域的所述第一熔融部分内以及将所述金属引脚的所述第二末端插入到所述第二焊料区域的所述第二熔融部分内。
5.根据权利要求1所述的方法，其中，在所述金属引脚接合至所述第一焊料区域和所述第二焊料区域之后，将所述介电薄膜保留在封装件中。
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