CN104777690A - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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CN104777690A
CN104777690A CN201510204304.4A CN201510204304A CN104777690A CN 104777690 A CN104777690 A CN 104777690A CN 201510204304 A CN201510204304 A CN 201510204304A CN 104777690 A CN104777690 A CN 104777690A
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CN104777690B (zh
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付延峰
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2015/079599 priority patent/WO2016173025A1/zh
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    • GPHYSICS
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/13629Multilayer wirings
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes

Abstract

本发明公开了一种阵列基板及显示装置,属于显示技术领域,解决了现有的液晶显示器的边框区域的宽度较大的技术问题。该阵列基板,所述阵列基板上设置有扇出线区域;所述扇出线区域包括多条导线,至少一条导线包括串联的第一金属线和第二金属线,所述第二金属线的单位电阻率大于所述第一金属线的单位电阻率;所述导线具有多种不同的长度,长度较短的导线中第二金属线的长度,大于长度较长的导线中第二金属线的长度。

Description

阵列基板及显示装置
技术领域
本发明涉及显示技术领域,具体地说,涉及一种阵列基板及显示装置。
背景技术
随着显示技术的发展,液晶显示器已经成为最为常见的显示装置。
在液晶显示器中,由阵列基板上纵横交错的栅线和数据线控制各个像素,以实现图像的显示。栅极驱动信号和数据信号是从液晶显示器中的控制芯片发出的,通常利用覆晶薄膜(Chip On Film,简称COF)将栅极驱动信号和数据信号分别传输至阵列基板上的栅线和数据线。
具体的,一个COF通过一组扇出线(fanout)连接至显示区域(ative area)的栅线或数据线。一组扇出线中包括多条导线,因为扇出线的整体呈扇形,位于该组扇出线左右两侧的导线的长度会大于位于扇出线中间的导线的长度,所以两侧导线的阻值比中间导线的阻值大,会使所传输的栅极驱动信号或数据信号的波形严重失真,影响驱动信号的均匀性。
如图1所示,现有技术中,大多采取将中间的导线设置为折线形的方式,使位于扇出线区域30两侧的导线与中间的导线的长度更加接近,则位于扇出线区域30两侧的导线与中间的导线的阻值也更加接近,以提高驱动信号的均匀性。但是,将导线设置成折线形,会使导线占用更大的空间,增大了液晶显示器的边框区域20的宽度d,难以满足当前对于窄边框产品的需求。
发明内容
本发明的目的在于提供一种阵列基板及显示装置,以解决现有的液晶显示器的边框区域的宽度较大的技术问题。
本发明提供一种阵列基板,所述阵列基板上设置有扇出线区域;
所述扇出线区域包括多条导线,至少一条导线包括串联的第一金属线和第二金属线,所述第二金属线的单位电阻率大于所述第一金属线的单位电阻率;
所述导线具有多种不同的长度,长度较短的导线中第二金属线的长度,大于长度较长的导线中第二金属线的长度。
优选的是,所述阵列基板包括第一金属层、第二金属层和第三金属层。
进一步的是,所述第二金属线位于所述第三金属层。
进一步的是,所述第一金属线位于所述第一金属层或所述第二金属层。
优选的是,第三金属层的厚度小于所述第一金属层和所述第二金属层的厚度。
优选的是,所述第二金属线的宽度小于所述第一金属线的宽度。
进一步的是,所述第一金属线与所述第二金属线之间通过透明电极连接。
优选的是,所述扇出线区域中的部分导线中仅包括第一金属线,且该第一金属线包括串联的单层金属段和双层金属段;
所述单层金属段位于所述第一金属层或所述第二金属层;
所述双层金属段由位于所述第一金属层和所述第二金属层中的两层金属并联形成。
进一步的是,越靠近扇出线区域左右两侧的导线中,第一金属线中双层金属段的长度越大。
本发明还提供一种显示装置,包括彩膜基板和上述的阵列基板。
本发明带来了以下有益效果:本发明提供的阵列基板中,扇出线区域中的导线可以由第一金属线和第二金属线串联组成,且第二金属线的单位电阻率大于第一金属线的单位电阻率。在长度越短的导线中,将第二金属线的长度设置的越长,就可以调节导线整体的阻值,使不同长度的导线的阻值更加接近,甚至相等,以提高驱动信号的均匀性。并且,本发明中的各条导线均可以设置为直线,从而减小了边框区域的宽度,能够满足当前对于窄边框产品的需求。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要的附图做简单的介绍:
图1是现有的阵列基板中扇出线的示意图;
图2是本发明实施例提供的阵列基板中扇出线的示意图;
图3a至图3c分别是本发明实施例一提供的阵列基板中扇出线的三种导线的示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要说明的是,只要不构成冲突,本发明中的各个实施例以及各实施例中的各个特征可以相互结合,所形成的技术方案均在本发明的保护范围之内。
如图2所示,本发明实施例提供一种阵列基板,包括显示区域10和边框区域20。在显示区域10中设置有若干栅线和若干数据线(图中未示出),在边框区域20中设置有若干个扇出线区域30,在本实施例中,将如图所示的一个扇出线区域30内的扇出线视为一组。
每一扇出线区域30包括多条导线,其中至少一条导线包括串联的第一金属线和第二金属线,第二金属线的单位电阻率大于第一金属线的单位电阻率。这些导线具有多种不同的长度,长度较短的导线中第二金属线的长度,大于长度较长的导线中第二金属线的长度。
本实施例中,位于扇出线区域30左右两侧的导线中仅包括第一金属线,不设置第二金属线。越靠近扇出线区域30的中间,导线的长度就越短,其中第二金属线的长度也越大。
应当说明的是,在一条导线中,可以包括串联的一段第一金属线和一段第二金属线,也可以包括串联的多段第一金属线和多段第二金属线。
本发明实施例提供的阵列基板中,在长度越短的导线中,将第二金属线的长度设置的越长,就可以调节导线整体的阻值,使一扇出线区域30内不同长度的导线的阻值更加接近,甚至相等,以提高驱动信号的均匀性。并且,扇出线区域30中的各条导线均可以设置为直线,从而减小了边框区域的宽度d',能够满足当前对于窄边框产品的需求。
如图3a、图3b和图3c所示,作为一个优选方案,本发明实施例提供的阵列基板中包括第一金属层11、第一绝缘层21、第二金属层12、第二绝缘层22和第三金属层13。其中,第一金属层11为栅极金属层,主要包括栅极扫描线和公共电极线。第二金属层12为源漏极金属层,主要包括数据线。第三金属层13为本发明实施例增加的金属层,用于形成扇出线区域30中的第二金属线。
如图3a所示,本实施例中,第二金属线位于第三金属层13,第一金属线位于第一金属层11。第一金属线与第二金属线之间通过透明电极4连接,透明电极4优选为铟锡氧化物(ITO)。具体的,在第一金属线上方形成贯穿第一绝缘层21和第二绝缘层22的过孔51,在第二金属线上方形成贯穿第二绝缘层22的过孔52,透明电极4通过过孔51、52使第一金属线与第二金属线串联连接。
或者,如图3b所示,第一金属线也可以位于第二金属层12,第一金属线与第二金属线之间通过透明电极4连接。具体的,在第一金属线上方形成贯穿第二绝缘层22的过孔53,在第二金属线上方形成贯穿第二绝缘层22的过孔54,透明电极4通过过孔53、54使第一金属线与第二金属线连接。
本实施例中,第三金属层13的厚度小于第一金属层11和第二金属层12的厚度,所以位于第三金属层13的第二金属线具有更小的横截面积,从而具有更大的单位电阻率。或者,可以使第二金属线的宽度小于第一金属线的宽度,也能够使第二金属线具有更小的横截面积,从而具有更大的单位电阻率。或者,还可以利用高电阻率的材料制作第三金属层13,使第二金属线具有更大的单位电阻率。
如图3c所示,本实施例中,位于扇出线区域30左右两侧的导线中仅包括第一金属线,不设置第二金属线。该第一金属线由位于第一金属层11和第二金属层12中的两层金属并联形成,这两层金属通过透明电极4连接,从而降低该导线整体的阻值,使其与扇出线区域30中间的导线阻值更加接近,提高驱动信号的传输质量。具体的,在第一金属层11上方形成贯穿第一绝缘层21和第二绝缘层22的过孔55,在第二金属层12上方形成贯穿第二绝缘层22的过孔56,透明电极4通过过孔55、56使第一金属层11与第二金属层12并联连接。
如图3a或图3b所示的导线的阻值Ra的大小可以由下式表示:
Ra=L1·R1+L2·R2
式中,L1为第一金属线的长度,R1为第一金属线的单位长度阻值(假设第一金属层11与第二金属层12的单位电阻率相等),L2为第二金属线的长度,R2为第二金属线的单位长度阻值。
此外,该条导线的长度La可以由下式表示:
La=L1+L2
如图3c所示的导线的阻值Rb的大小可以由下式表示:
Rb = Lb · R 1 · R 1 R 1 + R 1 = Lb · R 1 / 2
式中,Lb为该条导线的长度,R1为第一金属层11和第二金属层12的单位长度阻值(假设第一金属层11与第二金属层12的单位电阻率相等)。
综上,在优选实施例中,通过在扇出线区域30中部的导线中串联设置单位长度阻值更高的第二金属线,并在扇出线区域30左右两侧的导线中将第一金属线用两个金属层并联实现,可以使Ra=Rb,则结合以上算式可以得出:
Lb = 2 ( L 1 + L 2 · R 2 R 1 )
因为R2>R1,所以Lb>2La。
因此,本发明实施例中,可以通过调整扇出线区域30内导线的阻值,使各条导线均为直线且各条导线的整体阻值相近或相同,具体可以通过以下两种方法实现:
如图3a和3b所示,串联单位长度阻值更高的第二金属线,对于越靠近扇出线区域30中间位置的导线,其第二金属线的长度越长,以提高该导线的阻值,降低或消除该导线因长度较短而带来的阻值差异,从而能够显著减小其导线的长度。根据具体导线的总长度的不同,分别调整其第二金属线的长度,从而实现扇出线区域30内的各条导线均可设置为直线,且各条导线的整体阻值相近或相同。
如图3c所示,扇出线区域30中的部分导线中仅包括第一金属线,且该第一金属线包括串联的单层金属段和双层金属段。其中,单层金属段位于第一金属层或第二金属层,双层金属段由位于第一金属层和第二金属层中的两层金属并联形成。也就是使第一金属线采用两层或多层金属层并联的方式设计,对于越靠近扇出线区域30左右两侧的导线,其第一金属线中双层金属段的长度也越大,使其中双层金属段所占的长度比例越大,单层金属段所占的长度比例越小,从而降低或消除左右两侧导线因长度较长而带来的阻值增量。同样,根据具体导线长度的不同,调整第一金属线中双层金属段所占的长度比例,也能实现扇出线区域30内各条导线均为直线且各条导线的整体阻值相近或相同。
对于整个扇出线区域30,可以优选同时采用这两种方式结合以进行导线阻值调整,具体如本发明优选实施例;也可以单独使用其中一种来实现,只要能实现扇出线区域30内各条导线均为直线,且各条导线的整体阻值相近或相同即可。
此外,可以理解的是,对于单个导线,可以同时使用上述两种方法制成,即该导线的局部采用图3c中结构,同时,该导线的其他区域还可以采用图3a或图3b中的结构。
本发明实施例相比于现有技术,能够显著减小导线占用的空间,避免了现有技术中折线布线设计所带来的空间浪费,从而减小了阵列基板的边框区域的宽度,满足当前对于窄边框产品的需求。
此外,本发明实施例提供的技术方案也可以适当的与现有技术相结合。在不增加边框区域的宽度的前提下,可以将本实施例扇出线区域中的若干条导线的局部设置为弓形,以增加这些导线的阻值,提高驱动信号的均匀性。利用本发明的设计思路,可以显著降低现有技术中弓形导线段所占的比例,有利于窄边框的设计。
本发明实施例提供一种显示装置,可以是液晶电视、液晶显示器、手机、平板电脑等。该显示装置包括彩膜基板和上述实施例提供的阵列基板。
因为本发明实施例提供的显示装置与上述实施例提供的阵列基板具有相同的技术特征,所以也能解决相同的技术问题,达到相同的技术效果。
虽然本发明所公开的实施方式如上,但所述的内容只是为了便于理解本发明而采用的实施方式,并非用以限定本发明。任何本发明所属技术领域内的技术人员,在不脱离本发明所公开的精神和范围的前提下,可以在实施的形式上及细节上作任何的修改与变化,但本发明的专利保护范围,仍须以所附的权利要求书所界定的范围为准。

Claims (10)

1.一种阵列基板,所述阵列基板上设置有扇出线区域;
所述扇出线区域包括多条导线,至少一条导线包括串联的第一金属线和第二金属线,所述第二金属线的单位电阻率大于所述第一金属线的单位电阻率;
所述导线具有多种不同的长度,长度较短的导线中第二金属线的长度,大于长度较长的导线中第二金属线的长度。
2.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板包括第一金属层、第二金属层和第三金属层。
3.根据权利要求2所述的阵列基板,其特征在于,所述第二金属线位于所述第三金属层。
4.根据权利要求3所述的阵列基板,其特征在于,所述第一金属线位于所述第一金属层或所述第二金属层。
5.根据权利要求4所述的阵列基板,其特征在于,第三金属层的厚度小于所述第一金属层和所述第二金属层的厚度。
6.根据权利要求4所述的阵列基板,其特征在于,所述第二金属线的宽度小于所述第一金属线的宽度。
7.根据权利要求1所述的阵列基板,其特征在于,所述第一金属线与所述第二金属线之间通过透明电极连接。
8.根据权利要求2所述的阵列基板,其特征在于,所述扇出线区域中的部分导线中仅包括第一金属线,且该第一金属线包括串联的单层金属段和双层金属段;
所述单层金属段位于所述第一金属层或所述第二金属层;
所述双层金属段由位于所述第一金属层和所述第二金属层中的两层金属并联形成。
9.根据权利要求8所述的阵列基板,其特征在于,越靠近扇出线区域左右两侧的导线中,第一金属线中双层金属段的长度越大。
10.一种显示装置,包括彩膜基板和如权利要求1至9任一项所述的阵列基板。
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